JP2006196862A - Supporting pin for substrate - Google Patents

Supporting pin for substrate Download PDF

Info

Publication number
JP2006196862A
JP2006196862A JP2005218116A JP2005218116A JP2006196862A JP 2006196862 A JP2006196862 A JP 2006196862A JP 2005218116 A JP2005218116 A JP 2005218116A JP 2005218116 A JP2005218116 A JP 2005218116A JP 2006196862 A JP2006196862 A JP 2006196862A
Authority
JP
Japan
Prior art keywords
substrate
pin
support pin
porous body
tip part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005218116A
Other languages
Japanese (ja)
Inventor
Kazunobu Yamaguchi
和伸 山口
Tsuneo Tanimoto
恒夫 谷本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Tatsumo KK
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Tatsumo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd, Tatsumo KK filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2005218116A priority Critical patent/JP2006196862A/en
Priority to KR1020050124608A priority patent/KR20060069335A/en
Priority to TW094144870A priority patent/TW200625512A/en
Publication of JP2006196862A publication Critical patent/JP2006196862A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Abstract

<P>PROBLEM TO BE SOLVED: To provide a supporting pin that leaves no trace of the pin caused by a temperature fluctuation on a substrate. <P>SOLUTION: A substrate-supporting pin 20 has a tip part 22 replaceably attached to a body part 21. The upper surface of the tip part 22 is spherically formed. The tip part 22 is made of a porous sinter of a resin with a porosity attaining 20% to 60%. As a result, heat is not retained at the tip part of the pin, and causes no temperature difference at an area of contact with the substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明はガラス基板や半導体ウェーハなどの基板を支持する支持ピンに関する。   The present invention relates to a support pin that supports a substrate such as a glass substrate or a semiconductor wafer.

例えばＬＣＤ用ガラス基板にレジスト膜やカラーフィルタ膜を形成するには、レジスト液等を基板表面に塗布した後、ホットプレートなどを用いて基板を加熱処理する。この際、ガラス基板をホットプレートまで搬送する搬送アームやガラス基板を受け渡す昇降部材は、ガラス基板の下面を支持するピンを備えている。このピンがガラス基板の下面に下から当接することで、ガラス基板に温度ムラが発生したりピン跡が生じる問題がある。   For example, in order to form a resist film or a color filter film on a glass substrate for LCD, a resist solution or the like is applied to the substrate surface, and then the substrate is heated using a hot plate or the like. At this time, a transport arm that transports the glass substrate to the hot plate and a lifting member that delivers the glass substrate include pins that support the lower surface of the glass substrate. When this pin contacts the lower surface of the glass substrate from below, there is a problem that temperature unevenness occurs in the glass substrate or pin marks are generated.

この問題に対処するため、特許文献１ではホットプレート型のベーク炉に用いる支持ピンとして、全芳香族ポリイミド樹脂製のものが提案されている。
また、特許文献２及び３には基板支持部材の先端部に繊維からなる部分を設け、この繊維からなる部分をフェルト状或いは毛玉状にすることが提案されている。
特開平０８−２７９５４８号公報 特開平０３−２９６２２８号公報 特開２０００−０１２６５５号公報 In order to cope with this problem, Patent Document 1 proposes a wholly aromatic polyimide resin as a support pin used in a hot plate type baking furnace.
In Patent Documents 2 and 3, it is proposed that a portion made of a fiber is provided at the tip of the substrate support member, and the portion made of the fiber is made in a felt shape or a pill shape.
JP 08-279548 A Japanese Patent Laid-Open No. 03-296228 JP 2000-012655 A

特許文献１のように、ポリイミド樹脂製のピンとした場合には耐熱性には優れるが、ピンが密なためピン自体に熱が蓄積され、ピンと接触している箇所が他の箇所よりも冷却速度が遅くなるなど温度ムラが発生する。そして、この温度ムラは塗布ムラの原因になる。   When a pin made of polyimide resin is used as in Patent Document 1, the heat resistance is excellent, but since the pin is dense, heat is accumulated in the pin itself, and the portion in contact with the pin has a cooling rate higher than other portions. Temperature unevenness such as slowing down. This temperature unevenness causes uneven application.

また、特許文献１のように、繊維をフェルト状や毛玉状にした部分を基板の下面に接触させた場合には、当該接触部分において熱がこもらないので、温度ムラが発生しないが、基板に接触した際に細かい繊維がパーティクルとして基板に付着する不利がある。   In addition, as in Patent Document 1, when a fiber-like or pill-shaped portion is brought into contact with the lower surface of the substrate, heat does not accumulate at the contact portion, so temperature unevenness does not occur, but contact with the substrate In this case, there is a disadvantage that fine fibers adhere to the substrate as particles.

上記課題を解決するため本発明に係る基板支持ピンは、少なくとも基板の下面に当接する球状先端部を、プラスチック焼結多孔質体とした。尚、ピンの球状先端部のみでなくピン全体をプラスチック焼結多孔質体で構成してもよい。   In order to solve the above problems, in the substrate support pin according to the present invention, at least the spherical tip that contacts the lower surface of the substrate is a plastic sintered porous body. In addition, you may comprise not only the spherical front-end | tip part of a pin but the whole pin with a plastic sintered porous body.

多孔質体の好ましい気孔率としては２０％以上〜６０％以下である。気孔率が２０％未満では温度ムラによるピン跡が生じやすく、気孔率が６０％以上になるとピンの機械的強度が不足する。
尚、機械的強度を高めるためセラミック焼結体を支持ピンとすることも考えられるが、上記の気孔率にすることが困難で、ピン自体に熱が蓄積されてしまう。 The preferable porosity of the porous body is 20% to 60%. If the porosity is less than 20%, pin marks due to temperature unevenness are likely to occur, and if the porosity is 60% or more, the mechanical strength of the pin is insufficient.
Although it is conceivable to use a ceramic sintered body as a support pin in order to increase the mechanical strength, it is difficult to achieve the above porosity, and heat is accumulated in the pin itself.

上記のようなプラスチック焼結多孔質体を成形するには、プラスチック粉体を支持ピン形状に成形し、この成形体を当該プラスチックの融点近くまで加熱する。すると粉体粒子間の結合が進み、点接触から面接触への形状変化によって、緻密化とともに強度が増加する。尚、焼結によって寸法が縮まるためその分を見越した寸法の成形体を作製する必要がある。
またプラスチック焼結多孔質体は、焼結した母材を加工して製作する場合もある。 In order to mold the plastic sintered porous body as described above, a plastic powder is molded into a support pin shape, and the molded body is heated to near the melting point of the plastic. Then, the bonding between the powder particles proceeds, and the strength increases with densification due to the shape change from point contact to surface contact. In addition, since a dimension shrinks | reduces by sintering, it is necessary to produce the molded object of the dimension which anticipated the part.
The plastic sintered porous body may be manufactured by processing a sintered base material.

また、プラスチック焼結多孔質体を構成する材料としては、超高分子ポリエチレン、高密度ポリエチレンおよびＰＦＡ（フッ素樹脂）が、耐熱性、硬度において他の材料（ポリエチレン、ポリプロピレン、エチレン酢酸ビニル共重合体）と比較した結果、基板支持ピンとして最も優れていた。   In addition, as materials constituting the plastic sintered porous body, ultra-high molecular polyethylene, high density polyethylene and PFA (fluororesin) are other materials (polyethylene, polypropylene, ethylene vinyl acetate copolymer) in heat resistance and hardness. As a result, it was the most excellent substrate support pin.

本発明によれば、基板を支持するピンをプラスチック焼結多孔質体とすることでピン自体に熱がこもることがなくなり、温度ムラが基板に転写されることがなくなる。またプラスチック製とすることで繊維と比較して細かなパーティクルの発生を抑制することができる。
このように、温度ムラによって基板にピン跡がついてしまうおそれがないので、基板が大型化しても基板周囲のみでなく基板中央をピンによって支持することができる。 According to the present invention, since the pins supporting the substrate are made of a plastic sintered porous body, heat is not trapped in the pins themselves, and temperature unevenness is not transferred to the substrate. Moreover, generation | occurrence | production of a fine particle can be suppressed by using plastics compared with a fiber.
In this way, there is no fear that pin marks will be attached to the substrate due to temperature unevenness, so that not only the periphery of the substrate but also the center of the substrate can be supported by the pins even if the substrate is enlarged.

以下に本発明の好適な実施例を添付図面に基づいて説明する。図１は本発明に係る支持ピンを搬送装置と昇降装置に取り付けた例を示した図、図２は支持ピンによってガラス基板を支持している状態の拡大図である。   Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a view showing an example in which a support pin according to the present invention is attached to a transport device and a lifting device, and FIG. 2 is an enlarged view of a state in which a glass substrate is supported by the support pin.

図中１はホットプレート、２はホットプレート１に対しガラス基板Ｗを受け渡し或いはホットプレート１からガラス基板Ｗを受け取る搬送装置、３はホットプレート１からガラス基板Ｗを持ち上げる昇降装置である。   In the figure, 1 is a hot plate, 2 is a transfer device that delivers the glass substrate W to the hot plate 1 or receives the glass substrate W from the hot plate 1, and 3 is an elevating device that lifts the glass substrate W from the hot plate 1.

前記搬送装置２のアーム４の内側上面には本発明に係る支持ピン２０が取り付けられている。この支持ピン２０は図２に示すように本体部２１に対し先端部２２が交換可能に装着され、先端部２２の上面は球面状とされている。   A support pin 20 according to the present invention is attached to the inner upper surface of the arm 4 of the transport device 2. As shown in FIG. 2, the support pin 20 is attached to the main body portion 21 so that the tip end portion 22 is replaceable, and the top surface of the tip end portion 22 is spherical.

また、先端部２２はプラスチック焼結多孔質体からなり、その気孔率は２０％〜６０％とされている。尚、図示例では支持ピン２０を本体部２１と先端部２２に分けたが、ピン全体をプラスチック焼結多孔質体にて構成してもよい。   Moreover, the front-end | tip part 22 consists of a plastic sintered porous body, and the porosity is 20%-60%. In the illustrated example, the support pin 20 is divided into the main body portion 21 and the tip portion 22, but the entire pin may be formed of a plastic sintered porous body.

一方、ホットプレート１には厚み方向に貫通孔１０が形成され、この貫通孔１０に前記昇降装置３に設けた支持ピン３０が挿通している。この支持ピン３０も前記支持ピン２０と同様に本体部とこれに着脱自在とされた先端部にて構成されている。   On the other hand, a through hole 10 is formed in the hot plate 1 in the thickness direction, and a support pin 30 provided in the lifting device 3 is inserted into the through hole 10. Like the support pin 20, the support pin 30 is also composed of a main body portion and a tip portion that is detachable from the main body portion.

尚、図示例では支持ピンを搬送装置または昇降装置に適用した例を示したが、これに限らず基板の下面を支持する部材であれば、本発明に係る支持ピンを適用することができる。   In the illustrated example, the support pin is applied to the transport device or the lifting device. However, the present invention is not limited to this, and the support pin according to the present invention can be applied to any member that supports the lower surface of the substrate.

以下の（表）はプラスチック焼結多孔質体からなる先端部の材料として、超高分子ポリエチレンを用い、気孔率を変化させた場合のピン跡の有無を調べた結果である。この（表）から、気孔率は２０％〜６０％が好ましいことが分かる。   The following (Table) is the result of examining the presence or absence of pin marks when the porosity is changed using ultra high molecular weight polyethylene as the material of the tip portion made of a plastic sintered porous body. From this (table), it is understood that the porosity is preferably 20% to 60%.

本発明に係る支持ピンを搬送装置と昇降装置に取り付けた例を示した図The figure which showed the example which attached the support pin which concerns on this invention to the conveying apparatus and the raising / lowering apparatus 支持ピンによってガラス基板を支持している状態の拡大図Enlarged view of the glass substrate supported by the support pins

符号の説明Explanation of symbols

１…ホットプレート、１０…貫通孔、２…搬送装置、２０…基板支持ピン、２１…ピン本体部、２２…先端部、３…昇降装置、３０…支持ピン、Ｗ…ガラス基板。   DESCRIPTION OF SYMBOLS 1 ... Hot plate, 10 ... Through-hole, 2 ... Conveying device, 20 ... Board | substrate support pin, 21 ... Pin main-body part, 22 ... Tip part, 3 ... Elevating device, 30 ... Support pin, W ... Glass substrate.

Claims (3)

基板の下面を支持するために、搬送装置や昇降装置に設けられた支持ピンであって、この支持ピンは少なくとも基板の下面に当接する球状先端部を、プラスチック焼結多孔質体としたことを特徴とする基板支持ピン。 In order to support the lower surface of the substrate, it is a support pin provided in the transport device and the lifting device, and this support pin has at least a spherical tip that contacts the lower surface of the substrate as a plastic sintered porous body. Characteristic substrate support pin. 請求項１に記載の基板支持ピンにおいて、前記プラスチック焼結多孔質体の気孔率は２０％以上６０％以下であることを特徴とする基板支持ピン。 2. The substrate support pin according to claim 1, wherein the porosity of the sintered plastic porous body is 20% or more and 60% or less. 請求項１または請求項２に記載の基板支持ピンにおいて、前記プラスチック焼結多孔質体は超高分子ポリエチレンからなることを特徴とする基板支持ピン。 3. The substrate support pin according to claim 1, wherein the plastic sintered porous body is made of ultra high molecular weight polyethylene.
JP2005218116A 2004-12-16 2005-07-28 Supporting pin for substrate Pending JP2006196862A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005218116A JP2006196862A (en) 2004-12-16 2005-07-28 Supporting pin for substrate
KR1020050124608A KR20060069335A (en) 2004-12-16 2005-12-16 Supporting pin for substrate
TW094144870A TW200625512A (en) 2004-12-16 2005-12-16 Supporting pin for substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004364460 2004-12-16
JP2005218116A JP2006196862A (en) 2004-12-16 2005-07-28 Supporting pin for substrate

Publications (1)

Publication Number Publication Date
JP2006196862A true JP2006196862A (en) 2006-07-27

Family

ID=36802658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005218116A Pending JP2006196862A (en) 2004-12-16 2005-07-28 Supporting pin for substrate

Country Status (3)

Country Link
JP (1) JP2006196862A (en)
KR (1) KR20060069335A (en)
TW (1) TW200625512A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008112902A (en) * 2006-10-31 2008-05-15 Mitsubishi Heavy Ind Ltd Supporting method and supporting structure of substrate
JP2010047330A (en) * 2008-08-19 2010-03-04 Avanstrate Inc Glass plate carrying device and contact member
WO2019038902A1 (en) * 2017-08-25 2019-02-28 株式会社日本製鋼所 Laser irradiation device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100824305B1 (en) * 2006-12-22 2008-04-22 세메스 주식회사 Support pin, unit for supporting a substrate and apparatus for cleaning the substrate having the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263520A (en) * 1994-03-17 1995-10-13 Dainippon Screen Mfg Co Ltd Apparatus for conveying/accomodating substrate
JPH08323571A (en) * 1995-05-30 1996-12-10 Nitto Denko Corp Suction locking device
JP2002173250A (en) * 2000-12-07 2002-06-21 Nitto Denko Corp Suction carrying method and suction machining method
JP2002289664A (en) * 2001-03-26 2002-10-04 Toray Ind Inc Substrate carrying hand and substrate carrying method, color filter manufacturing apparatus using these and manufacturing method thereof
JP2003103723A (en) * 2001-10-01 2003-04-09 Nitto Denko Corp Antistatic porous object

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263520A (en) * 1994-03-17 1995-10-13 Dainippon Screen Mfg Co Ltd Apparatus for conveying/accomodating substrate
JPH08323571A (en) * 1995-05-30 1996-12-10 Nitto Denko Corp Suction locking device
JP2002173250A (en) * 2000-12-07 2002-06-21 Nitto Denko Corp Suction carrying method and suction machining method
JP2002289664A (en) * 2001-03-26 2002-10-04 Toray Ind Inc Substrate carrying hand and substrate carrying method, color filter manufacturing apparatus using these and manufacturing method thereof
JP2003103723A (en) * 2001-10-01 2003-04-09 Nitto Denko Corp Antistatic porous object

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008112902A (en) * 2006-10-31 2008-05-15 Mitsubishi Heavy Ind Ltd Supporting method and supporting structure of substrate
JP2010047330A (en) * 2008-08-19 2010-03-04 Avanstrate Inc Glass plate carrying device and contact member
WO2019038902A1 (en) * 2017-08-25 2019-02-28 株式会社日本製鋼所 Laser irradiation device
JPWO2019038902A1 (en) * 2017-08-25 2020-11-05 株式会社日本製鋼所 Laser irradiation device
US11684999B2 (en) 2017-08-25 2023-06-27 Jsw Aktina System Co., Ltd Laser irradiation apparatus

Also Published As

Publication number Publication date
TW200625512A (en) 2006-07-16
KR20060069335A (en) 2006-06-21

Similar Documents

Publication Publication Date Title
JP2006196862A (en) Supporting pin for substrate
US8136714B2 (en) Micro-fluidic injection molded solder (IMS)
TW200909363A (en) Methods for forming compositions containing glass
JP2010064945A (en) Method for manufacturing ceramic composite particle and functional ceramic composite particle
JP2009023777A (en) Sheet for suction fixing
JP2002025758A (en) Hot plate unit
JP2006026981A (en) Sucking and fixing sheet and its manufacturing method
TWI364811B (en)
JPH10107131A (en) Suction table and element thereof
JPWO2014163130A1 (en) Glass substrate and slow cooling method thereof
JP4092553B2 (en) Transport system
JP5231064B2 (en) Vacuum adsorption apparatus and method for manufacturing the same
WO2007069519A1 (en) Microstructure and method for manufacturing same
JP2009007223A (en) Method and apparatus for producing glass formed article
JP2009149474A (en) Molding die and method for manufacturing the die
JP2008000609A (en) Conductive plate for cooking container for induction range
KR101661035B1 (en) Forming mold for glass
JP2002231713A (en) Jig for semiconductor manufacturing apparatus
JP2010129709A (en) Sample supporter, and heating device
KR101499983B1 (en) Mold apparatus and method of fabricating sintering body
JP2004250321A (en) Inorganic porous thin film, laminate using it, and method of manufacturing inorganic porous thin film
JP2000062950A (en) Flotation apparatus
US20100162762A1 (en) Optical element manufacturing method and optical element
CN106601465B (en) A kind of high temperature resistant circle alms bowl
KR100944530B1 (en) Wafer Bumping Template Manufactured by Glass Forming and Manufacturing Method Thereof

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080609

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100223

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100302

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100706