JP2007251073A - Member for supporting substrate - Google Patents
Member for supporting substrate Download PDFInfo
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- JP2007251073A JP2007251073A JP2006075841A JP2006075841A JP2007251073A JP 2007251073 A JP2007251073 A JP 2007251073A JP 2006075841 A JP2006075841 A JP 2006075841A JP 2006075841 A JP2006075841 A JP 2006075841A JP 2007251073 A JP2007251073 A JP 2007251073A
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- substrate
- support member
- tip
- substrate support
- pin
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- 239000000758 substrate Substances 0.000 title claims abstract description 129
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000000835 fiber Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 206010004542 Bezoar Diseases 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Coating Apparatus (AREA)
Abstract
Description
本発明は、ガラス基板や半導体ウェーハ等の基板を支持する基板支持部材に関する。 The present invention relates to a substrate support member that supports a substrate such as a glass substrate or a semiconductor wafer.
従来から、液晶表示装置（ＬＣＤ）の製造工程においてガラス基板にレジスト膜やカラーフィルタ膜を形成するには、基板載置台の上にガラス基板を載置し、この状態でガラス基板の上面に膜材料（塗布液）を塗布している。そして基板載置台にガラス基板を受け渡すには、基板載置台に上下方向の貫通孔を形成し、この貫通孔にピン状の基板支持部材を出没自在に設け、基板支持部材を基板載置台上面よりも上方に突出させ、この状態で基板支持部材の上端にガラス基板を受け渡し、基板支持部材が下降することで基板載置台の上にガラス基板が載置される。 Conventionally, in order to form a resist film or a color filter film on a glass substrate in the manufacturing process of a liquid crystal display device (LCD), the glass substrate is placed on a substrate mounting table, and in this state, the film is formed on the upper surface of the glass substrate. The material (application liquid) is applied. In order to deliver the glass substrate to the substrate mounting table, a vertical through hole is formed in the substrate mounting table, and a pin-like substrate support member is provided in the through hole so that the substrate support member can be moved in and out. In this state, the glass substrate is delivered to the upper end of the substrate support member, and the substrate support member is lowered to place the glass substrate on the substrate mounting table.
ところで、特許文献１及び特許文献２では基板支持部材の改良が提案されている。
特許文献１においては、東レ・デュポン社（登録商標）製のカプトン（登録商標）等のポリイミド樹脂からなるプロキシミティピンを用いて、基板をプロキシミティピン上に載置して熱処理を行う基板加熱装置が開示されている。
By the way, in patent document 1 and patent document 2, the improvement of a board | substrate support member is proposed.
In Patent Document 1, substrate heating is performed by placing a substrate on the proximity pin and performing heat treatment using proximity pins made of polyimide resin such as Kapton (registered trademark) manufactured by Toray DuPont (registered trademark). An apparatus is disclosed.
また特許文献２においては、搬送アーム上に設けた基台に支持材料として繊維状の材質で形成された基板支持部材を用いることで、基板上に蓄えられた熱が基板支持部材から分散化して伝熱するようにし、基板上に残る基板支持部材の転写跡が従来よりもぼやけて目立たなくなるようにした基板の保持装置について開示されている。
しかしながら、特許文献１のように、略半円形状、角筒形状、４分割四角形などの先端を持つポリイミド樹脂製のピンとした場合には耐熱性には優れる。また特許文献２のように、繊維をフェルト状や毛玉状にした部分を基板の下面に接触させた場合には、当該接触部分において熱がこもらないという利点はある。しかし、両文献に示す構成の場合では、ピンあるいは繊維の基板との接触部分と非接触部分との間の温度ムラの発生を防止することは難しい。 However, as in Patent Document 1, when a pin made of polyimide resin having a substantially semicircular shape, a rectangular tube shape, a quadrant quadrilateral or the like is used, the heat resistance is excellent. In addition, as in Patent Document 2, when a part in which a fiber is formed in a felt shape or a hairball shape is brought into contact with the lower surface of the substrate, there is an advantage that heat does not accumulate in the contact part. However, in the case of the configurations shown in both documents, it is difficult to prevent the occurrence of temperature unevenness between the contact portion and the non-contact portion of the pin or fiber substrate.
なお、例えば他の構成において、基板の受け渡し動作では、基板を載置台上面に載置した時に基板と基板支持部材が非接触の状態となってしまう。即ち下降させた状態で基板支持部材の先端部は載置台上面よりも下方に位置しており、基板支持部材の上端と基板下面との間には貫通孔の隙間が形成されてしまう。この貫通孔によって形成される空間部分は周囲よりも温度が低く、この部分と対応する基板上でも温度ムラが生じてしまう。 For example, in another configuration, in the substrate transfer operation, the substrate and the substrate support member are not in contact with each other when the substrate is placed on the placement table. That is, when the substrate support member is lowered, the tip of the substrate support member is positioned below the upper surface of the mounting table, and a through hole is formed between the upper end of the substrate support member and the lower surface of the substrate. The temperature of the space portion formed by the through holes is lower than that of the surroundings, and temperature unevenness occurs on the substrate corresponding to this portion.
上述した点に鑑み、本発明は、基板載置台上に基板が載置された状態で、基板裏面との間に隙間が形成されることのない構成の基板支持部材を提供するものである。 In view of the above-described points, the present invention provides a substrate support member having a configuration in which no gap is formed between the substrate back surface and the substrate mounted on the substrate mounting table.
本発明に係る基板支持部材は、基板載置部材上で基板を支持するために、基板載置部材に形成された貫通孔より出没可能とされた基板支持部材であって、基板支持部材は基板の自重により縮む構成とした。 A substrate support member according to the present invention is a substrate support member that can be projected and retracted from a through-hole formed in the substrate mounting member in order to support the substrate on the substrate mounting member. The structure shrinks by its own weight.
本発明に係る基板支持部材によれば、基板支持部材は基板の自重により縮む構成としたので、基板載置部材上に基板が載置された場合、基板自身の自重により縮むことになる。このように基板の自重で縮むことから基板載置部材上に基板が載置された状態では、基板載置部材の貫通孔において、支持部材の先端部と基板裏面との間には隙間が形成されず、例えば従来の基板支持部材の構成のように、支持部材自体を下降させて載置台上に基板を載置する場合と比較して、上述した温度ムラの発生を抑えることができる。 According to the substrate support member of the present invention, since the substrate support member is configured to be contracted by its own weight, when the substrate is placed on the substrate mounting member, the substrate support member is contracted by its own weight. Since the substrate is thus contracted by its own weight, a gap is formed between the tip of the support member and the back surface of the substrate in the through hole of the substrate mounting member when the substrate is mounted on the substrate mounting member. However, for example, the occurrence of the temperature unevenness described above can be suppressed as compared with the case where the substrate is placed on the mounting table by lowering the supporting member itself as in the configuration of the conventional substrate supporting member.
上述した基板支持部材において、その先端部がアルミニウム又は樹脂から成るようにすることもできる。このように構成することで基板支持部材の耐久性を向上させることができる。 In the substrate support member described above, the tip end portion may be made of aluminum or resin. By comprising in this way, durability of a board | substrate support member can be improved.
また上述した基板支持部材において、その先端部が逆円錐形状とすることもできる。この場合、基板裏面との接触面は円形平面であり、基板との接触面積が大きくなるので温度ムラが少なくなる。さらに逆円錐形状としたことで、例えば円柱形状の場合と比較して、部分的に貫通孔の内壁と基板支持部材との間隙を大きくとれる箇所が形成されるので、基板支持部材が基板載置部材の貫通孔内に収まる際の内壁への接触の危険性がより少なくなる。 Further, in the above-described substrate support member, the tip end portion thereof may have an inverted conical shape. In this case, the contact surface with the back surface of the substrate is a circular flat surface, and the contact area with the substrate is increased, so that temperature unevenness is reduced. In addition, since the inverted conical shape is used, for example, a portion where the gap between the inner wall of the through hole and the substrate support member can be made larger than in the case of the cylindrical shape is formed. There is less risk of contact with the inner wall when it fits within the through hole of the member.
また上述した基板支持部材においては、その先端部が円錐形状とすることもできる。この場合、基板裏面との接触面は円形平面であり、逆円錐形状の場合と同様基板との接触面積が大きくなり基板表面での温度ムラが少なくなる。 Further, in the above-described substrate support member, the tip end portion can be conical. In this case, the contact surface with the back surface of the substrate is a circular plane, and the contact area with the substrate is increased as in the case of the inverted conical shape, and temperature unevenness on the substrate surface is reduced.
本発明の基板支持部材によれば、基板載置部材上に基板が載置された状態で、基板裏面との間に隙間が形成されない。従って、基板上の塗膜への影響を最小限に抑えられる基板支持部材を実現することができる。 According to the substrate support member of the present invention, no gap is formed between the substrate back surface and the substrate back surface in a state where the substrate is placed on the substrate placement member. Therefore, it is possible to realize a substrate support member that can minimize the influence on the coating film on the substrate.
以下において、本発明を実施するための最良の形態を図面に基づいて詳細に説明する。なお、以下の説明において、同一機能を有するものは同一の符号とし、その繰り返しの説明は省略する。 Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings. In the following description, components having the same function are denoted by the same reference numerals, and repeated description thereof is omitted.
図１には、基板載置部材（載置台）１に対しガラス基板Ｗを受け渡し、或いは載置台１から基板Ｗを受け取る搬送装置２、載置台１から基板Ｗを持ち上げる昇降装置３が図示されている。 FIG. 1 illustrates a transfer device 2 that delivers a glass substrate W to a substrate mounting member (mounting table) 1 or receives a substrate W from the mounting table 1, and a lifting device 3 that lifts the substrate W from the mounting table 1. Yes.
搬送装置２のアーム４の内側上面には周辺部基板支持部材６が取り付けられている。この周辺部基板支持部材６は、本体部に対し交換可能に装着され、周辺部基板支持部材６の先端部上面は円形平面とされている。 A peripheral substrate support member 6 is attached to the inner upper surface of the arm 4 of the transfer device 2. The peripheral substrate support member 6 is replaceably attached to the main body, and the top surface of the distal end portion of the peripheral substrate support member 6 is a circular plane.
載置台１には厚み方向に貫通孔５が形成され、この貫通孔５に昇降装置３に設けたピン状をなす本実施の形態に係る基板支持部材７が挿通されている。 A through hole 5 is formed in the mounting table 1 in the thickness direction, and a substrate support member 7 according to the present embodiment having a pin shape provided in the lifting device 3 is inserted into the through hole 5.
支持ピン７は、図２に示すように、チューブ１０の下端にて載置台１とチャック９の間隔を調整することにより交換可能に装着されている。チューブ１０の中にはロッド１１が挿入されており、ロッド１１の先端部１１ａは更に細い径のロッドとなっている。そしてロッド先端部１１ａの下端部にはコイルスプリング１２が装着され、ロッド先端部１１ａには、コイルスプリング１２によって昇降可能な先端部８が取り付けられている。
なお図２に示す状態では、コイルスプリング１２が縮んで先端部８の下端がチューブ１０の上端にひっかかっており、図示しないが載置台１上に基板Ｗが載置されている状態を示している。因みに載置台１上から基板Ｗがはずされた状態は、コイルスプリング１２が伸びて先端部８の下端がチューブの上端から離れた状態となる。
As shown in FIG. 2, the support pin 7 is mounted to be exchangeable by adjusting the distance between the mounting table 1 and the chuck 9 at the lower end of the tube 10. A rod 11 is inserted into the tube 10, and the tip 11a of the rod 11 is a rod having a smaller diameter. A coil spring 12 is attached to the lower end of the rod tip 11a, and a tip 8 that can be moved up and down by the coil spring 12 is attached to the rod tip 11a.
In the state shown in FIG. 2, the coil spring 12 is contracted and the lower end of the distal end portion 8 is caught on the upper end of the tube 10, and although not shown, the substrate W is mounted on the mounting table 1. . Incidentally, when the substrate W is removed from the mounting table 1, the coil spring 12 extends and the lower end of the tip 8 is separated from the upper end of the tube.
支持ピン７の先端部８の直径（基板Ｗ裏面と接触する面の径）は、貫通孔５の内径よりも若干小さく形成されており、面積的には支持ピン７の先端部表面積が貫通孔５の先端部表面積よりも若干小さくなっている。つまり、支持ピン７の径寸法を、支持ピン７の垂直方向における摺動性を妨げない範囲で可能な限り貫通孔５の内径に近づけた。これにより支持ピン７の先端部８の側面と載置台１の貫通孔５の側面との間に形成される空間が限りなく小さり、温度の低下の要因となる隙間が小さくなるので、温度ムラが基板へと転写されることを抑えられる。 The diameter of the tip 8 of the support pin 7 (the diameter of the surface in contact with the back surface of the substrate W) is formed slightly smaller than the inner diameter of the through-hole 5, and the surface area of the tip of the support pin 7 is the through-hole in terms of area. 5 is slightly smaller than the tip end surface area. That is, the diameter of the support pin 7 was made as close as possible to the inner diameter of the through-hole 5 as long as the slidability in the vertical direction of the support pin 7 was not hindered. As a result, the space formed between the side surface of the tip 8 of the support pin 7 and the side surface of the through hole 5 of the mounting table 1 is extremely small, and the gap that causes a decrease in temperature is reduced. Is prevented from being transferred to the substrate.
このような支持ピン７を用いた実際の基板Ｗの載置動作を、図３（ａ）（ｂ）を用いて説明する。図３（ａ）は支持ピン７上に基板Ｗが載置される前の状態、図３（ｂ）は基板Ｗが載置された後の状態を図示している。載置前では、載置台１の貫通孔５において、支持ピン７の先端部８は載置台１上面よりも突出している（例えば１〜２ｍｍ）。 The actual placement operation of the substrate W using the support pins 7 will be described with reference to FIGS. 3A shows a state before the substrate W is placed on the support pins 7, and FIG. 3B shows a state after the substrate W is placed. Before mounting, in the through hole 5 of the mounting table 1, the tip 8 of the support pin 7 protrudes from the upper surface of the mounting table 1 (for example, 1 to 2 mm).
この状態で、例えば図示しないロボットにより載置台１上に基板Ｗが載置されると、支持ピン７のコイルスプリング１２が基板Ｗの自重が先端部８に伝わり、両方の重みでコイルスプリング１２が沈む。この際、先端部８の先端は基板Ｗの裏面に接触し、先端部８の先端と載置台１の上面が面一状態となる。なおコイルスプリング１２は、基板Ｗを押し上げる程の力を有さない程度のコイルスプリング定数を設定しているので、再度基板Ｗを押し上げることはない。 In this state, for example, when the substrate W is mounted on the mounting table 1 by a robot (not shown), the coil spring 12 of the support pin 7 transmits the weight of the substrate W to the tip 8, and the coil spring 12 is moved by both weights. Sink. At this time, the tip of the tip 8 comes into contact with the back surface of the substrate W, and the tip of the tip 8 and the top surface of the mounting table 1 are flush with each other. Since the coil spring 12 has a coil spring constant that does not have a force enough to push up the substrate W, the coil spring 12 is not pushed up again.
このように、本実施の形態の支持ピン７によれば、コイルスプリング１２で支持された先端部８の先端面が基板Ｗの裏面に接触し(載置台１表面と面一状態で)、例えば支持ピン自体を垂直方向に昇降させて基板を載置する場合のように、支持ピンの先端部と基板Ｗ裏面との間に隙間が形成されない。従って、例えば支持ピンと基板Ｗにより形成される隙間部分と対応する基板Ｗ上で温度ムラが生じることもなく塗布ムラの発生を抑えることができる。 Thus, according to the support pin 7 of the present embodiment, the front end surface of the front end portion 8 supported by the coil spring 12 contacts the back surface of the substrate W (in a state flush with the surface of the mounting table 1), for example, A gap is not formed between the tip of the support pin and the back surface of the substrate W as in the case where the substrate is placed with the support pin itself moved up and down in the vertical direction. Therefore, for example, temperature unevenness does not occur on the substrate W corresponding to the gap formed by the support pins and the substrate W, and the occurrence of coating unevenness can be suppressed.
上述した実施の形態の支持ピン７においては、その先端部８がアルミニウム又は樹脂から成るように構成することもできる。これにより支持ピン７自体の耐久性を高めることができる。 The support pin 7 of the above-described embodiment can be configured such that the tip portion 8 is made of aluminum or resin. Thereby, durability of support pin 7 itself can be improved.
上述した実施の形態の支持ピン７においては、その先端部８の形状を円柱形状としたが、これ以外にも図４に示すように逆円錐形状とすることもできる。この場合は、基板Ｗ裏面と接触する面は上述した円柱形状の場合と同様に円形平面であり円柱形状の場合と同様の作用を得ることができる。
さらに逆円錐形状の場合は、例えば円柱形状の場合と比較して長さ方向において全ての径が同径ではないので（長さ方向にいくに従って径が短くなる）、部分的に貫通孔５の側壁（内壁）と支持ピン７の先端部８側面との間に隙間が形成される。これにより支持ピン７が載置台１の貫通孔５内に収まる際に貫通孔５の測壁へ接触する危険性を低くできる。
In the support pin 7 of the above-described embodiment, the shape of the tip end portion 8 is a cylindrical shape, but other than this, as shown in FIG. In this case, the surface in contact with the back surface of the substrate W is a circular plane as in the case of the cylindrical shape described above, and the same effect as in the case of the cylindrical shape can be obtained.
Further, in the case of the inverted conical shape, for example, not all the diameters in the length direction are the same as in the case of the columnar shape (the diameter becomes shorter as going in the length direction). A gap is formed between the side wall (inner wall) and the side surface of the tip 8 of the support pin 7. Thereby, when the support pin 7 fits in the through-hole 5 of the mounting table 1, the risk of contacting the wall of the through-hole 5 can be reduced.
なお、本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲でその他様々な構成が取り得る。 The present invention is not limited to the above-described embodiment, and various other configurations can be taken without departing from the gist of the present invention.
半導体メモリなど大型半導体の需要が増える一方、価格に対する値下げ要求も厳しくなり、半導体の大型ウェーハ化と歩留向上が課題となる中、本発明の基板支持部材を使うことにより塗布膜ムラ改善が見込めるので大型ウェーハを使った場合でも歩留改善が期待できる。 While demand for large-scale semiconductors such as semiconductor memory increases, demands for price reductions become stricter, and while there are challenges in increasing the size of semiconductor wafers and improving yields, using the substrate support member of the present invention is expected to improve coating film unevenness. Therefore, even when large wafers are used, yield improvement can be expected.
１…載置台、 ２…搬送装置、 ３…昇降装置、 ４…アーム、 ５…貫通孔、 ６…周辺部基板支持部材、 ７…基板支持部材、 ８…先端部、 １０…チューブ、 １１…ロッド、 １１ａ…ロッド先端部、 １２…コイルスプリング、 Ｗ…基板。
DESCRIPTION OF SYMBOLS 1 ... Mounting stand, 2 ... Conveying device, 3 ... Elevating device, 4 ... Arm, 5 ... Through-hole, 6 ... Peripheral substrate support member, 7 ... Substrate support member, 8 ... Tip part, 10 ... Tube, 11 ... Rod 11a ... Rod end, 12 ... Coil spring, W ... Substrate.
Claims (4)
2. The substrate support member according to claim 1, wherein a tip portion of the substrate support member has an inverted conical shape.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006075841A JP4906375B2 (en) | 2006-03-20 | 2006-03-20 | Substrate support member |
| TW096107558A TW200802683A (en) | 2006-03-20 | 2007-03-05 | Member for supporting substrate |
| KR1020070024790A KR100948759B1 (en) | 2006-03-20 | 2007-03-14 | Supporting member for substrate |
| CNA2007100875094A CN101043014A (en) | 2006-03-20 | 2007-03-16 | Supporting member for substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006075841A JP4906375B2 (en) | 2006-03-20 | 2006-03-20 | Substrate support member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007251073A true JP2007251073A (en) | 2007-09-27 |
| JP4906375B2 JP4906375B2 (en) | 2012-03-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006075841A Active JP4906375B2 (en) | 2006-03-20 | 2006-03-20 | Substrate support member |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4906375B2 (en) |
| KR (1) | KR100948759B1 (en) |
| CN (1) | CN101043014A (en) |
| TW (1) | TW200802683A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100968814B1 (en) | 2008-05-14 | 2010-07-08 | 세메스 주식회사 | Lift pin structure and substrate treating apparatus with it |
| CN106311525A (en) * | 2016-08-23 | 2017-01-11 | 豪威光电子科技（上海）有限公司 | Glue coating process |
| KR20170012786A (en) * | 2015-07-24 | 2017-02-03 | 주식회사 선익시스템 | Correction Apparatus for Glass Deflection and Buffer Chamber Using Thereof |
| JP2021510010A (en) * | 2018-01-09 | 2021-04-08 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | Lift pin system for wafer operation |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010087343A (en) * | 2008-10-01 | 2010-04-15 | Toray Eng Co Ltd | Substrate processing device and substrate placing method |
| JP2010087342A (en) * | 2008-10-01 | 2010-04-15 | Toray Eng Co Ltd | Lift pin |
| JP6512182B2 (en) | 2016-06-27 | 2019-05-15 | 日亜化学工業株式会社 | Semiconductor device manufacturing method |
| CN111312653B (en) * | 2020-03-16 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Wafer carrying device and semiconductor processing equipment |
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| JP2004059116A (en) * | 2002-07-31 | 2004-02-26 | Sharp Corp | Tray for storing substrate for display, taking out mechanism for the substrate for display, and method for taking out the substrate for display |
| US8033245B2 (en) * | 2004-02-12 | 2011-10-11 | Applied Materials, Inc. | Substrate support bushing |
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- 2007-03-14 KR KR1020070024790A patent/KR100948759B1/en active IP Right Grant
- 2007-03-16 CN CNA2007100875094A patent/CN101043014A/en active Pending
Patent Citations (4)
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| JPH1064982A (en) * | 1996-08-14 | 1998-03-06 | Dainippon Screen Mfg Co Ltd | Substrate support mechanism and substrate treatment unit |
| JP2000237983A (en) * | 1999-02-22 | 2000-09-05 | Hitachi Electronics Eng Co Ltd | Board chuck device |
| JP2002151581A (en) * | 2000-07-20 | 2002-05-24 | Applied Materials Inc | Method and apparatus for dechucking a substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100968814B1 (en) | 2008-05-14 | 2010-07-08 | 세메스 주식회사 | Lift pin structure and substrate treating apparatus with it |
| KR20170012786A (en) * | 2015-07-24 | 2017-02-03 | 주식회사 선익시스템 | Correction Apparatus for Glass Deflection and Buffer Chamber Using Thereof |
| KR101715147B1 (en) | 2015-07-24 | 2017-03-14 | 주식회사 선익시스템 | Buffer Chamber Including Correction Apparatus for Glass Deflection |
| CN106311525A (en) * | 2016-08-23 | 2017-01-11 | 豪威光电子科技（上海）有限公司 | Glue coating process |
| JP2021510010A (en) * | 2018-01-09 | 2021-04-08 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | Lift pin system for wafer operation |
| JP7534214B2 (en) | 2018-01-09 | 2024-08-14 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | Lift pin system for wafer handling |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI364811B (en) | 2012-05-21 |
| CN101043014A (en) | 2007-09-26 |
| KR100948759B1 (en) | 2010-03-23 |
| JP4906375B2 (en) | 2012-03-28 |
| TW200802683A (en) | 2008-01-01 |
| KR20070095197A (en) | 2007-09-28 |
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