201240011 /、、發明說明： 【發明所屬之技術領域】 本發明係關於-種靜電夾具，係於基板處理裝置之處理室 内，在載置基板之基板载置台上形成基板載置面。 【先前技術】 以液晶顯示裝置(LCD)為首之FPD(Flat Pand Display)之製程 中’已知有對於以玻璃基板為首之各種基板施以電漿處理之 處理裝置。 ％ 。如此之基板處理裝置，係具有：基板載置纟，係於處理室(以 下稱為「腔室」）内支樓玻璃基板(以下簡稱為「基板」）；以及上 部電極’係和該基板載置台隔著處理空間㈣向配置者；對於發 揮下部電極功能之基板載置台施加電漿生成帛高頻電力㈣，且 對於處理空間導入處理氣體來生成電黎，使用所生成之電聚來對 基板載置台之基板载置面上所較之基板施以既定賴處理。 形成基板載置台之基板載置面的靜電夾具構成通常主要係 包括：形f上層以及下層之作為絕緣層的氧化铭(Al2〇3)層、以及 配置在該氧化銘層所構成之上層與下層之間的靜電電極板。從 而，對基板施以電漿處理之際，基板載置於靜電夾具之由氧化铭 所構成之上層’氧化姆絲板之㈣成為抵接。 ^匕，，由於破璃與氧化鋁為帶電列分離，故將玻璃所構成之 基板《靜f失具上提之際容紐生獅帶電，基板會因為剝離帶 電而帶負電。起因於如此般於基板所發生之負電荷，會有基板表 广斤之電路元件受靜電放電(Electric Static Discharge)而被破 壞或疋粒子等污染物質被吸附於基板表面之問題。此外，由於 201240011 玻璃所構成之基板被載置於氧化鋁層上，會因為兩者之硬度差而 發生基板内面受損傷之問題。 做為防止如此之載置於基板載置台之基板的損傷、污染物質 附著於基板等之技術，有人提出例如以玻璃層來形成上層以及下 層，而於其間配置靜電電極板之靜電夾具(例如參見「專利文獻 1」）。 先前技術文獻 專利文獻1日本特開2009—032718號公報 【發明内容】 以註：成上層以及下層的靜電夾具，係將 以在之構成材料加以大幅變更，難以保持和以往品之以氧化妙 2成為同等之耐電壓性能，並且玻璃會受到含氟氣體; 雜’故有難以確保靜電夾具對含·體之耐受性的問題。 面之夾具’可防蝴成於基板表 面之域’即使對於已完錢置之裝置也可輕易翻。板内 ，了解決上述課題’申請專利翻第丨項 理裝置之處理室内，在駿基板之基域置台ί形成$ 構成:料於該基板載置面係形成有和該基板内:之 構成材似_材料、錢接職基板内面之被膜層。 靜電夹申之靜繼，係於申物翻第i項之 周部所圍繞之區二島部ί:!:成ί:為外周部與存在於該外 膜層係形成於該外周ί。出之犬出部的壓紋狀構造；該被 4 201240011 靜電了，’ _請專W第2項之 电犬具中，该被膜層係進一步形成於該島部分。 項之^狀1_具，胁冑__第2或3 突出狀構造係使得該基板载置面突出而形成 。並於该突出部上面形成該被膜層所得者。 項之圍第5項之靜電央具，係於申請專利範圍第2或3 中’該壓紋狀構造係將該基板載置面設定為平面， 於5亥千面上以該被膜層來形成突出部所得者。 靜電ΓΓί利範圍第6項之靜電夹具，係於_請專利範圍第1項之 ^該被膜層係形成於圍繞在該基板載置面之用以自該 二板載置面將該基板上提所設置之升降銷進行升降之開口的區 靜雷利範圍第7項之靜電夹具’係於申請專利範圍第1項之 電^具中，該被膜層係遍及於該基域置面之全面來形成。 項中ΐίΓΐ®第8項之靜電夾具，係獅請翻朗第1至7 、 、之邊電炎具中，該被膜層係以玻璃所形成。 項中利f圍第9項之靜電夾具，係於申請專利範圍第1至8 兮® 、之靜電失具中，該基板載置面係具有上層、下層、被 與下層所挾持之靜電電極板的該靜電夾具之該上層的上 =表面’該上層以及下層係由對含氟氣體具耐受性之介電質所構 之靜圍第1〇項之靜電夹具，係於申請專利範圍第1項 H 電夾具中，於該基板载置面係形成有成為外周部與存在於該 被膜島部分所突出之突出部的壓紋狀構造；該 膜曰係形成於該島部分；該外周部係由财電漿性材料所構成。 201240011 項；===：— 之:電_，該島部 部’並於該如部上面戦额顧。 Μ域犬出 至⑵嫩，範圍第10 項之If電夾具巾，翻^層細綱所形 項之靜電夾具中，該基板載置面係具有上層、下 層與下層所挾持之靜電電極板的該靜電夾具之該上層 ’紅相及下祕由對含氟氣H具耐纽之介電質 所構成。 依據本發明，由於在基板載置面係形成有和基板内面之構成 材料為同樣材料所構成且抵接於基板内面之被膜層，可防止將載 置於靜電夾具之基板從該靜電夾具上提之際容易發生之剝離 ^可防止對戦於基錄面之電路元狀破壞以及污染物質附 者於基板，且可防止基板内面之損傷，並且對於已完成設置之裝 置也可輕易適用。 & 【實施方式】 以下，針對本發明之實施形態參見圖式來詳述之。 圖1係示意顯示適用具備本發明之實施形態之靜電夾具的基 板載置台之基板處理裝置構成截面圖。此基板處理裝置係例如對 液晶顯示裝置製造用玻璃基板施以既定電漿處理。 於圖1中，基板處理裝置10係具有腔室11(收容例如單邊為數 6 201240011 公尺之矩形賴所構成之基板G)，於該 置，狀載置台(晶細。晶座12係以 f 所構狀細精成，紐13經桃 =底部所支縣。基·係呈現截面时，於上部設置内建有 ==^!4讀€纽4()，以卩平⑽縣魅基糾之基 m以包圍ί板載置面41周圍的方式設有做為屏蔽構件之屏蔽 哀屏蔽環μ係以例如氧化紹等絕緣性陶究所構成。 於靜電電極板44連接著直流電源17，一旦對靜㈣極板糾 施加正的直流雜，則於基板載置面41所魅之基板⑽靜電電 極板44側這面(以下稱為「内面」）會引發負電荷，藉此於靜電電 極板44與基板G之内面之間產生電場，基板G受到起因於該電場 之庫倫力或是強森·拉貝克(j〇hnsen-Rahbek)力的影響而被吸附保 持於基板載置面41。 ’、 於基材13内部係設置有溫度調節機構(圖示省略），用以對基 材13以及載置於基板載置面41之基板G的溫度進行調節。於該溫 度3周卽機構係被循環供給例如冷卻水或加爾登(Galden，註冊商標) 等冷媒，由該冷媒所冷卻之基材13係將基板G加以冷卻。 於基材13周圍係配置有絕緣環18來做為將包含屏蔽環15與 基材13之抵接部的側面加以包覆之側邊密封構件。絕緣環μ係由 絕緣性陶瓷例如氧化鋁所構成。 於貫通腔室11底壁、絕緣構件14以及基材13之貫通孔係以可 升降之方式插通有升降銷(lifterpin)21。升降銷21係在當載置於基 板載置面41之基板G的搬入以及搬出時產生作動，在將基板〇搬 入腔室11内之際或是從腔室11搬出之際，通過設置在基板載置面 201240011 41的開口21a而上升到晶座12上方之搬送位置，除此以外之時候 係以埋設狀態收容於基板載置面41内。 於基板載置面41開口出複數熱傳導氣體供給孔(省略圖示）。 複數熱傳導氣體供給孔係連接於熱傳導氣體供給部(未圖示），從 熱傳導氣體供給部將做為熱傳導氣體之例如氦(He)氣體供給於基 板載置面41以及基板G内面之間隙。供給於基板載置面41以及基 板G内面之間_氦氣體係將晶座u之財效果地傳遞至基板 G。 用以供給咼頻電力之高頻電源2 3係經由匹配器24而連接於 晶座12之基材13。從高頻電源23施加例如電漿生成用高頻電力， 晶座12係發揮下部電極之魏。匹配㈣係降低來自晶座^之高 頻電力的反射而使得高頻電力朝晶座12之施加效率能最大化。 …基板處理裝置1G係藉由腔室狀内側壁與晶座12之側面來 形成側方排氣流路26。此側方排氣流路26經由排氣管27而連接於 排氣裝置28。做為排氣裝置28之TMp(Turb〇 M〇lecular pump)以及 DP(Dry Pump)(皆省略圖示)均將腔室丨丨内加以抽真空來減壓。具 體而§ ’ DP係將腔室叫從大氣壓減壓至中真空狀態（例如 1 ’3X10Pa(0.1 Torr)以下）’ tmp係和Dp共同作用來將腔室丨丨内減壓 3至比中真空$狀態來得更低之壓力的高真空狀態(例如，13χΐ〇_ fa(l.〇xlG Torr)以下）。此外，腔室丨丨内之壓力係受到闕(圖 不省略)所控制。 於腔室11之天花板部分係對向於晶座12來配置著淋灑頭 30。淋灑聊具有内部空間3卜且具有對其與晶座12之間的處理 空間s流出處理氣體之複數氣體孔32 ”淋灑頭纖接地而發揮上 電極之功月b，和發揮下部電極功能之晶座】2一同構成一對平行 8 201240011 平板電極。 淋灑頭30係經由氣體供給管36而連接於處理氣體供給源 39。於氣體供給管36設有開閉閥37以及質流控制器38。再者，於 腔室11之側壁設有基板搬出入口34，此基板搬出入口34可藉由間 閥35而開閉。此外，經由此閘閥35來對處理對象之基板g進行搬 出入。 基板處理裝置10係從處理氣體供給源39經由處理氣體導入 管36而被供給處理氣體。所供給之處理氣體係經由淋灑頭3〇之内 部空間31以及氣體孔32而被導入腔室11之處理空間§。被導入之 處理氣體係被從高頻電源23經由晶座12而施加於處理空間s之電 漿生成用高頻電力所激發而成為電漿。電漿申之離子朝向基板G 被拉入，而對基板G施以既定電漿蝕刻處理。 基板處理裝置10之各構成零件之動作係基板處理裝置1〇所 具備之控制部(圖示省略)的CPU依照和電漿蝕刻處理相對應之程 式來控制。 其次，針對本發明之靜電夾具(形成圖1之基板處理裝置10中 之基板載置台12的基板載置面)來說明。 圖2係本發明之第1實施形態之靜電夾具構成截面圖。做為基 板之液晶顯示裝置製造用玻璃基板係載置於此靜電夾具。 於圖2中，靜電夾具40a係配置於晶座12之構成構件的基材i 3 上’主要構成包括：由絕緣性陶瓷之氧化鋁(Al2〇3)所構成之上層 42以及同樣由氧化銘(Al2〇3)戶斤構成之下層43、以被上層42與下層 43所挾持的方式配置於其間之金屬層所構成之靜電電極板44。上 層42之上部表面係成為基板載置面41，於該基板載置面μ係設置 有和載置於該基板載置面41之基板G内面為同樣材質所構成之被 201240011 膜層(以下稱為「最上層」)45a。最上層45a係和基板G内面相抵接。 基板G係玻璃製’其内面也為玻璃所構成。對應於此，最上 層45a係以玻璃所形成。 最上層45a和基板G内面之構成材料同樣以玻璃材來形成可 防止剝離帶電。 於本實施形態’防止剝離帶電之機制被認為如下。一般，將 相抵接之2個構件加以剝離之際，會因為兩者帶電列之差而產生 靜電。如此之現象稱為剝離帶電。從而，若將基板G内面之構成 材料與做為載置該基板(}之靜電夾具4〇a的基板載置面的最上層 45a之構成材制帶電狀差儘可能減少、較佳為成為零，可抑 制剝離帶電之發生n於本實施職，若靜f^4〇a之最 上層45a之構成材料係使用和載置於該靜電夾具4〇&之基板g内面 之構成材料為同樣材料(亦即玻璃材），可消除兩者之帶電列之 差，藉此，可有效防止當將載置於靜電夾具4〇a之基板〇從該靜電 夾具40a上提之際所發生的剝離帶電。 此外，於最上層45a之周圍係設有做為對於最上層45a與載置 於该最上層45a之基板G内面之間所供給之溫度傳遞媒體的氦氣 體的流通5^46。 如此構成之靜電夾具40a係被組裝於圖丨之基板處理裝置 1〇，虽對於基板G施以既定電漿蝕刻處理之際，將該基板G從内 面加以支撐。 依據本實施形態，由於在上層42之基板載置面41設有和基板 G内面為同樣材質之玻璃材所構成之最上層45a，而可使得基板G 内面之I電列與最上層45a之帶電列成為相同，可防止將載置於 #電夾具4〇a之基板G自該靜電夾具4〇a上提之際容易發生之剝離 201240011 藉此可防止因基板G帶負電所致靜電放電而破壞於基板 面所形成之電路元件、或是污染物質附著於基板G。再者， 若基板G内面之構成材料與最上層祝之構成材料同樣由玻璃所 構成，可消除基板G内面與抵接於基板G内面之最上層45a之構成 材料間的=度差，可防止因硬度差造成基板内面之損傷。 於本實施形態’做為靜電夾具他之最上層45a之構成材料雖 使=了玻翁，㈣可錢和基板⑽面之構成㈣之玻璃有接 近π電列的材質例如石英、獅胺等。石英以及輯胺由於和玻 璃有接近的f制’故即使賴做為最上層45a之構成材料也可 抑制與玻璃基板G之間發生剝離帶電。 於本實施形態，最上層45a之厚度係例如1〇μιη〜1〇〇μηι，此最 上層4城關如_材之騎、塗布、_板之接著、玻璃板 之接著後的部分的剝離等公知方法來形成。 於本貫施形態，靜電夾具40a之上層42以及下層43係以介電 質之氧化賴形成。氧化由於對於含氟氣體例如Sf6、Cf4等所 產生之賴(㈣錢)具有耐纽，故即便反覆賴侧處理也 不會消耗靜電纽4Ga。此外’若不僅是最上層45a連上層42以及 下層43皆財璃材來形成，财易發生微紐等，難以確保靜電 夾具40a之絕緣性。再者，由於玻璃基板之處理多使用含氟氣體， 故上層42以及下層43若以玻璃材來形成則露練氟氣體所生成 之電聚的部分會Ό彳損傷。從而，較佳為僅最上層45a使用玻璃 材’而上層42以及下層侧使騎氟线漿具树受性之氧化紹 等。 於本實施形態’最上層45a雖設置於基板載置面41全體，但 不限定於此。 201240011 圖3係本發明之第2實施形態之靜電夾具構成截面圖。此靜電 夹具40b有別於圖2之靜電夾具4〇a之點在於，為了減少基板G内面 與靜電夾具4〇b之上層42表面之基板載置面41的抵接面積，基板 載置面41由外周部(以下稱為「堤防部」）所圍繞之部分係形成為 壓紋狀，僅此堤防部設置由玻璃材所構成之最上層4%。..... s此外’所說的壓紋狀乃指例如由配置為棋盤格狀之俯視圓形 或是矩形等圖形的複數凸狀島部分與圍繞該島部分之凹部所構 成之部分的形狀’換言之，係指某種俯視圖形成為浮雕狀之狀態。 依據本實施形態，由於在容易發生剝離帶電之基板載置面41 周，之堤防部設有玻璃材所構成之最上層45b，故基板載置抓 之堤防部與基板(3内面會具有相同的帶電列，可防止堤防部之剝 離帶電的發生，藉此，可防止因基板(^帶負電而破壞於基板〇表 面所形成之電路元件並可防止污雜質畴於基板G。 圖4係本發明之第3實施形態之靜電夾具構成戴面圖。此靜電 二具4〇c有別於圖3之靜電夾具.之處在於，於基板載置面…之 3。嗅丨讀部所醜之驗狀島部分雙方表面設置玻璃材所 構成之最上層45c。 ;圖4中靜電夾具4〇c之上層42的基板載置面係被加工為 &、、f大’於堤防部表面形成有由玻璃材所構成之最上層45c卜且 於=防。p所圍繞之壓紋狀島部分表面形成有玻璃材所構成之最 上層45c2。 依據本實施形態，由於使得靜電夾具4〇c之最上層攸與基板 命士面之3材質相同’且最上層4城由形成於堤防部之最上層45cl ^ %防部所圍繞之壓紋狀島部分處所形成之最上層45c2而 故可/肖除於載置基板之最上層45c與基板G内面之構成材料 201240011 間的帶電列之差’且可減少基板G内面與最上層45c之接觸面積。 藉此，可更確實地防止剝離帶電之發生，可避免因基板G帶電而 破壞形成於基板表面之電路元件、以及粒子附著於基板等。 於本實施形態’最上層45c之厚度係例如Ο.ΐμπι〜ΙΟμιη為相對 地薄’可藉由例如塗布法來輕易形成。從而，可對於已完成設置 之裝置的靜電夾具來事後地適用而附加最上層45c，即使於LCD 之製造現場也可充分對應。此外，由玻璃材所構成之最上層45c 係用以防止載置於靜電夾具4〇c之由玻璃所構成之基板g内面與 靜電夾具4〇c之由氧化鋁所構成之上層42的直接接觸。 圖5係本發明之第4實施形態之靜電夾具構成截面圖。此靜電 爽具40d係和圖4所示第3實施形態之靜電夾具4〇c同樣地形成被 堤防部分所圍繞之壓紋狀，而有別於圖4之靜電夾具4〇c之處在 於’將上層42之基板載置面41設定為平面，於上層42上設置由玻 璃材所構成且構成為基板載置面41之堤防部的最上層45dl，且設 置由玻璃材所構成之最上層45d2做為存在於堤防部所圍繞之區 域的壓紋狀島部分。圖5中之最上層45d係由最上層45dl與最上層 45d2所構成。 即使依據本實施形態，也可防止將基板G上提之際所容易發 生之剝離帶電，可防止粒子等污染物質附著於基板G，並防止破 壞形成於基板表面之電路元件等，且可防止對基板G内面造成損 傷。 於本實施形態’最上層45d之厚度為例如1〇μιη〜ι〇〇μιη，此最 上層45d係藉由例如玻璃材之溶射、塗布、玻璃板之接著、玻璃 板之接著後的部分剝離等公知方法來形成。 圖6係顯示本發明之第5實施形態之靜電夾具構成的俯視 13 201240011 圖。此靜電夾減於基域置面之升降舰行升降關σ附近設 置由玻璃材所構成之最上層。 於圖6中，此淨電夾具4〇e係具有升降銷21，設置之目的用以 在對處理室11内搬入基板G之際或是從處理室丨〗搬出基板G之際 可將基板G支撐於基板載置面上方，於該升降銷21進行升降之開 口21a周邊部係設置有由玻璃材所構成之最上層4义。 將载置於靜電夾具之基板載置面的基板G從基板載置面加 以上提之際，基板G與基板載置面最先出現剝離之部分為將基板 G上提之升降銷周邊部，於此升降銷周邊部容易發生剝離帶電。 於本貫施形態，有鑑於如此之情事，乃於升降銷21進行升降 之開口 21a周邊部設置由玻璃材所構成之最上層45f。 依據本實施形態’由於在容易發生剝離帶電之升降銷2i進行 升降的開口 21 a周邊部設置有和基板G内面之構成材料相同為由 玻璃材所構成之最上層45e，故可有效地防止利用升降銷21來將 基板G自基板載置面上提之際的剝離帶電’藉此可防止基板〇之 帶電’可防止破壞於基板G表面所形成之電路元件、並可防止污 染物質附著於基板G等。 上述第2實施形態至第5實施形態之靜電夾具的基板載置面 41之堤防部的全部或是一部分適用了玻璃材，不過當施行於基板 G之電漿蝕刻處理所使用之電漿為含有氟離子以及氟自由基之氟 系電漿之情況，例如以SF6、CF4等所產生之電漿為主成分之情 況’有時堤防部會因為該氟系電漿而被餘刻消耗。 於本發明之第6實施形態，對應於此，基板載置面41之堤防 部係以相對於氟電漿具耐受性之絕緣性陶瓷例如氧化鋁或氧化 紀所構成。 201240011 本f狀第6實卿態之靜電纽構錢面圖。 户I# f具4〇枝別於第2實施形態之圖3的靜電夾且.之 =於，堤防部47(外周部)係和上層42以及下_同上氧: >乳化&_成，細堤_賴繞 「廢紋部分」職出部)僅由玻璃材所形成。（下％為 會接觸中a由於在靜電夾具4Ge之基板載置面41，形成於可能 f漿之雜的堤防部47細職賴具耐受性之氧化紹 成’故即便對基板G表面所施以之電襞_處理中 防部US叫反紐之氟賴粒成分的情況，仍可防止堤 再者，由於基板G内面之大部分所相接之壓紋部分48係和基 板G内面之構成材料以烟之玻璃材所構成，故不僅可防止剝離 帶電’且可抑制於基板G内面起因於和基板載置面41之硬度差所 致微小傷痕的發生，從而，可防止因賴微小舰所致液晶顯示 裝置之”’、員示不良。此外，從抑制微小傷痕發生的觀點來看，壓紋 部f48能師朗材為_硬度或是較低硬度之材料所構成，例 如能以氮化硼、氧化鎳、鈦酸鋁等所構成。 再者，由於靜電夹具4〇e之壓紋部分48僅由玻璃材所形成， 故僅需變更玻璃材之配置部位(例如塗布部位)即可變更壓紋部分 48之形成部位，從而，可提高壓紋部分仆之配置自由度。 此外，於本實施形態由於堤防部47係由絕緣性陶瓷所形成， 故雖於基板G之周緣部内面或多或少可能發生微小傷痕，但由於 該基板G之周緣部係對應於液晶顯示裝置之顯示面的周緣部，而 為形成TFT列之範圍外，故該微小傷痕幾乎無影響液晶顯示裝置 之顯示品質之可能性。 15 201240011 圖8係f7,電夾具之第1變形例之構成截面圖。 圖靜電夹具撕係具備有：以絕緣性陶瓷所形成之堤 上 吩48 ’係主要由絕緣性陶細成而於 面形成有由玻璃材所構成之最上層45c3。 靜電夾具撕不同於靜電失具他，壓紋部分48並非全部由玻 ^材所形成，僅於上面形成由_材所構成之最上層伽，故可 ^化，”構成之層’從而能以塗布法等簡便方法來形成該 :=ii，45c，是以塗布法也能藉由例如玻璃材之炼 Μ隹t、之接著、玻璃板之接著後_研磨進行部分性剝 離專公知方法來形成。 圖9係圖7之靜電夾具之第2變形例之構成截面圖。 於圖9中，靜電夾具4〇g係具備有由絕緣性陶竟所形成之堤防 部47以及由玻猶所構叙丨片平板㈣疏接部.内面抵接 部49係配基域置面41料鱗以堤防辦7來包圍著。當基 板G載置於靜電爽具4〇g之際，基板G内面會抵接於堤防部以及 内面抵接部49。 再者，圖10係圖7之靜電夾具之第3變形例之構成截面圖。 於圖10巾電夹具4Gh係具備有由絕緣,請究所形成之堤 防部47以及由玻璃材所構成之平板狀内面抵接部％。内面抵接部 50也和内面抵接部49同樣地藉由堤防部47來包圍其周緣，並形成 有成為熱傳導氣體之流路的多數槽渠(溝槽別。當基板〇載置於靜 電夾具40h之際’基板G内面會抵接於堤防部47以及内面抵接部 50。 即便疋靜電夾具40g以及靜電夾具4〇h，由於基板g内面之大 部分所相接之内面抵接部49、50係以和基板G内面之構成材料為 201240011[Technical Field] The present invention relates to an electrostatic chuck in which a substrate mounting surface is formed on a substrate mounting table on which a substrate is placed in a processing chamber of a substrate processing apparatus. [Prior Art] In the process of FPD (Flat Pand Display) including a liquid crystal display device (LCD), a processing device for applying plasma treatment to various substrates including glass substrates is known. %. The substrate processing apparatus includes a substrate mounting cassette and a glass substrate (hereinafter simply referred to as "substrate") in a processing chamber (hereinafter referred to as "chamber"); and an upper electrode ' and the substrate carrying The device is placed in the processing space (4), and the substrate is placed on the substrate mounting table that functions as the lower electrode. The high-frequency power is generated by the plasma (IV), and the processing gas is introduced into the processing space to generate the electricity, and the generated electropolymer is used to form the substrate. The substrate on the substrate mounting surface of the mounting table is subjected to a predetermined process. The electrostatic chuck structure for forming the substrate mounting surface of the substrate mounting table generally includes an oxide layer (Al 2 〇 3) layer as an insulating layer in the upper layer and the lower layer, and an upper layer and a lower layer formed on the oxidized layer. Between the electrostatic electrode plates. Therefore, when the substrate is subjected to plasma treatment, the substrate is placed on the electrostatic chuck, and the upper layer of the oxidized filament plate (4) is abutted. ^匕,, because the glass and alumina are separated by the electrified column, the substrate made of glass is charged with the sinusoidal lion, and the substrate is negatively charged due to stripping. Due to such a negative electric charge generated on the substrate, the circuit component of the substrate is damaged by electrostatic static discharge or the contaminant such as ruthenium particles is adsorbed on the surface of the substrate. In addition, since the substrate made of the 201240011 glass is placed on the aluminum oxide layer, the inner surface of the substrate is damaged due to the difference in hardness between the two. As a technique for preventing such damage to a substrate placed on a substrate mounting table and adhesion of a contaminant to a substrate, for example, an electrostatic chuck in which an upper electrode layer and a lower layer are formed by a glass layer and an electrostatic electrode plate is disposed therebetween is known (see, for example, "Patent Document 1"). [Patent Document 1] Japanese Laid-Open Patent Publication No. 2009-032718 (Description of the Invention) Note: The electrostatic chucks in the upper layer and the lower layer are largely changed in the constituent materials, and it is difficult to maintain the oxidation of the conventional products. It is equivalent to the withstand voltage performance, and the glass is subjected to a fluorine-containing gas; it is difficult to ensure the resistance of the electrostatic chuck to the inclusion body. The jig of the face can prevent the butterfly from forming on the surface of the substrate. It can be easily turned over even for a device that has been used for money. In the inside of the board, the processing room for solving the above-mentioned problem is applied to the base of the substrate. The composition is formed on the substrate mounting surface and the constituent material in the substrate. Like _ materials, money to take over the film layer on the inside of the substrate. The electrostatic relay is based on the second island of the area surrounded by the article i of the item i. The:::: The outer periphery and the outer layer existing in the outer layer are formed on the outer periphery. The embossed structure of the out of the dog; the quilt 4 201240011 is electrostatically charged, and the film layer is further formed on the island portion in the electric dog of the second item. In the case of the item 1, the second or third protruding structure is formed such that the substrate mounting surface is protruded. And forming the film layer on the protrusion. The electrostatic device of Item 5 of the item is in the second or third of the patent application scope. 'The embossed structure is formed by setting the substrate mounting surface to a plane, and forming the film layer on the surface of 5 The winner of the protrusion. The electrostatic chuck of the sixth item of the electrostatic range is in the first item of the patent scope. The film layer is formed on the substrate mounting surface for lifting the substrate from the mounting surface of the two boards. The static clamp of the seventh item of the opening and closing section of the opening and closing pin for lifting and lowering is in the electric appliance of the first application of the patent scope, and the coating layer is integrated throughout the base area. form. Item ΐίΓΐ® Item 8 of the electrostatic fixture, the lion is turned into the first to seventh, and the side of the electro-inflammatory device, the film layer is formed by glass. The electrostatic chuck of Item 9 of the item is in the electrostatic dislocation of the patent application range 1 to 8 兮®, which has an upper layer, a lower layer, and an electrostatic electrode plate held by the lower layer. The upper surface and the lower layer of the upper surface of the electrostatic chuck are the electrostatic chucks of the first layer and the lower layer which are made of a dielectric material resistant to fluorine-containing gas, and are in the first patent application scope. In the item H mounting jig, an embossed structure in which an outer peripheral portion and a protruding portion that protrudes in the island portion of the film are formed on the substrate mounting surface; the film is formed on the island portion; the outer peripheral portion is formed It consists of financial and pulp materials. 201240011 item; ===:-: electricity_, the island department' and on the top of the department. The dog in the field is (2) tender, in the 10th item of the If electric jig towel, and the electrostatic chuck of the item of the layered structure, the substrate mounting surface has the electrostatic electrode plate held by the upper layer, the lower layer and the lower layer. The upper layer of the electrostatic chuck, the red phase and the lower layer, is composed of a dielectric material having a resistance to fluorine-containing gas H. According to the present invention, since the substrate on the substrate mounting surface is formed of the same material as the material of the inner surface of the substrate and abuts against the film layer on the inner surface of the substrate, the substrate placed on the electrostatic chuck can be prevented from being lifted from the electrostatic chuck. The peeling which is easy to occur can prevent the destruction of the circuit on the base recording surface and the contamination of the substrate on the substrate, and can prevent the damage of the inner surface of the substrate, and can be easily applied to the device which has been completed. <Embodiment> Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 is a cross-sectional view showing the configuration of a substrate processing apparatus to which a substrate mounting table including an electrostatic chuck according to an embodiment of the present invention is applied. This substrate processing apparatus applies, for example, a predetermined plasma treatment to a glass substrate for liquid crystal display device manufacturing. In FIG. 1, the substrate processing apparatus 10 is provided with a chamber 11 (for example, a substrate G having a rectangular shape of singly 6 201240011 meters), and is placed on the mounting stage (crystallized. The crystal holder 12 is f The structure is fine and fine, and the New 13 passes through the peach=bottom county. When the base is in the cross section, the upper part is built with ==^!4 reading €4(), to the level of the county (10) The correction base m is provided with a shielding shielding ring μ as a shielding member so as to surround the mounting surface 41 of the board, and is formed of an insulating ceramic such as oxidized. The DC electrode 17 is connected to the electrostatic electrode plate 44. When a positive DC impurity is applied to the static (four) plate, the surface of the substrate (10) on the substrate electrode surface 44 (hereinafter referred to as "inner surface") is negatively charged, thereby causing static electricity. An electric field is generated between the electrode plate 44 and the inner surface of the substrate G, and the substrate G is adsorbed and held on the substrate mounting surface 41 by the Coulomb force or the force of the J〇hnsen-Rahbek due to the electric field. ', a temperature adjustment mechanism (not shown) is provided inside the substrate 13 for the substrate 13 and placed thereon. The temperature of the substrate G on the substrate mounting surface 41 is adjusted. At this temperature, the refrigerant is circulated, for example, to a cooling medium such as a cooling water or a Galden (registered trademark), and the substrate 13 cooled by the refrigerant is The substrate G is cooled. An insulating ring 18 is disposed around the substrate 13 as a side sealing member that covers the side surface including the abutting portion of the shield ring 15 and the substrate 13. The insulating ring μ is insulated. The ceramic is made of, for example, alumina. The through hole of the bottom wall of the chamber 11 and the insulating member 14 and the substrate 13 is inserted into a lifter pin 21 so as to be lifted and lowered. The lift pin 21 is placed on the lifter pin 21 The substrate G of the substrate mounting surface 41 is moved during loading and unloading, and when the substrate 〇 is carried into the chamber 11 or when it is carried out from the chamber 11, the opening 21a of the substrate mounting surface 201240011 41 is provided. In the other case, the substrate is placed in the substrate mounting surface 41. The plurality of heat conduction gas supply holes (not shown) are opened in the substrate mounting surface 41. Supply hole In the heat transfer gas supply unit (not shown), for example, helium (He) gas as a heat transfer gas is supplied to the gap between the substrate mounting surface 41 and the inner surface of the substrate G. The substrate is placed on the substrate mounting surface 41 and Between the inner surfaces of the substrates G, the helium gas system transfers the effect of the crystal holders u to the substrate G. The high-frequency power source 23 for supplying the power of the frequency is connected to the substrate 13 of the crystal holder 12 via the matching unit 24. For example, high frequency power for plasma generation is applied from the high frequency power source 23, and the crystal holder 12 functions as a lower electrode. The matching (4) reduces reflection of high frequency power from the crystal holder and causes application of high frequency power to the crystal holder 12. Efficiency can be maximized. The substrate processing apparatus 1G forms the side exhaust flow path 26 by the inner side wall of the chamber and the side surface of the crystal holder 12. This side exhaust flow path 26 is connected to the exhaust unit 28 via an exhaust pipe 27. Both the TMp (Turb〇 M〇lecular pump) and the DP (Dry Pump) (not shown) of the exhaust device 28 are evacuated in the chamber to reduce the pressure. Specifically, § 'DP system calls the chamber from atmospheric pressure to medium vacuum (for example, 1 '3X10Pa (0.1 Torr) or less)' tmp system and Dp work together to decompress the chamber to 3 to the medium vacuum. The state of the vacuum is lower than the high vacuum state (for example, 13 χΐ〇 _ fa (l. 〇 xlG Torr) or less). In addition, the pressure in the chamber is controlled by 阙 (not omitted). The shower head 30 is disposed on the ceiling portion of the chamber 11 opposite to the crystal seat 12. The shower has a plurality of gas holes 32 having an internal space 3 and having a processing space s flowing out from the processing space s between the crystal holders 12, and the shower head is grounded to play the upper electrode, and the lower electrode function is exerted. The crystal holders 2 constitute a pair of parallel 8 201240011 plate electrodes. The shower head 30 is connected to the processing gas supply source 39 via a gas supply pipe 36. The gas supply pipe 36 is provided with an on-off valve 37 and a mass flow controller 38. Further, a substrate carry-out port 34 is provided on the side wall of the chamber 11, and the substrate carry-in/out port 34 can be opened and closed by the gap valve 35. Further, the substrate g to be processed is carried in and out via the gate valve 35. The apparatus 10 is supplied with a processing gas from the processing gas supply source 39 via the processing gas introduction pipe 36. The supplied processing gas system is introduced into the processing space of the chamber 11 via the internal space 31 of the shower head 3 and the gas hole 32. § The introduced process gas system is excited by the high-frequency power generated by the plasma generated from the high-frequency power source 23 via the crystal holder 12 in the processing space s to become a plasma. The plasma ion is pulled toward the substrate G. The substrate G is subjected to a predetermined plasma etching process. The components of the substrate processing apparatus 10 are controlled by the CPU of the control unit (not shown) provided in the substrate processing apparatus 1 (corresponding to the plasma etching process). Next, the electrostatic chuck of the present invention (the substrate mounting surface on which the substrate stage 12 in the substrate processing apparatus 10 of Fig. 1 is formed) will be described. Fig. 2 is an electrostatic chuck according to the first embodiment of the present invention. The glass substrate for manufacturing a liquid crystal display device as a substrate is placed on the electrostatic chuck. In Fig. 2, the electrostatic chuck 40a is disposed on the substrate i 3 of the constituent members of the crystal holder 12. The upper layer 42 composed of alumina of insulating ceramics (Al 2 〇 3) and the lower layer 43 of the same oxidized ceramic (Al 2 〇 3) are disposed between the upper layer 42 and the lower layer 43. The surface of the upper layer 42 is the substrate mounting surface 41, and the substrate mounting surface μ is provided with the same material as the inner surface of the substrate G placed on the substrate mounting surface 41. Constitute 201 240 011 film (hereinafter referred to as "the top") 45a. The uppermost layer 45a is in contact with the inner surface of the substrate G. The substrate G is made of glass, and the inner surface thereof is also made of glass. Corresponding to this, the uppermost layer 45a is formed of glass. The constituent materials of the uppermost layer 45a and the inner surface of the substrate G are also formed of a glass material to prevent peeling electrification. In the present embodiment, the mechanism for preventing peeling electrification is considered as follows. In general, when two components that are in contact with each other are peeled off, static electricity is generated due to the difference between the two electrified columns. Such a phenomenon is called stripping charging. Therefore, the difference in the charging property of the constituent material of the inner surface of the substrate G and the uppermost layer 45a of the substrate mounting surface on which the electrostatic chuck 4a of the substrate is placed is reduced as much as possible, and preferably becomes zero. The occurrence of the peeling electrification can be suppressed. In the present embodiment, the constituent material of the uppermost layer 45a of the static electrode is used and the constituent material of the inner surface of the substrate g placed on the electrostatic chuck 4 is the same material. (that is, the glass material) can eliminate the difference between the electrified columns of the two, thereby effectively preventing the peeling electrification occurring when the substrate placed on the electrostatic chuck 4A is lifted from the electrostatic chuck 40a Further, a circulation 5^46 of the helium gas supplied to the temperature transmitting medium supplied between the uppermost layer 45a and the inner surface of the substrate G placed on the uppermost layer 45a is provided around the uppermost layer 45a. The electrostatic chuck 40a is assembled to the substrate processing apparatus 1 of the drawing, and the substrate G is supported from the inner surface when a predetermined plasma etching treatment is applied to the substrate G. According to the embodiment, the substrate is on the upper layer 42. The mounting surface 41 is provided with the inner surface of the substrate G The uppermost layer 45a of the glass material of the same material can make the I-line of the inner surface of the substrate G and the electrification column of the uppermost layer 45a the same, and can prevent the substrate G placed on the #electroclamp 4〇a from the static electricity. When the jig 4〇a is lifted up, it is easy to peel off 201240011, thereby preventing circuit elements formed on the substrate surface due to electrostatic discharge caused by negative charge of the substrate G, or contamination substances adhering to the substrate G. The constituent material of the inner surface of the substrate G is made of glass in the same manner as the constituent material of the uppermost layer, and the difference in degree between the inner surface of the substrate G and the constituent material of the uppermost layer 45a contacting the inner surface of the substrate G can be eliminated, and the difference in hardness can be prevented. Damage to the inner surface of the substrate. In the present embodiment, the constituent material of the uppermost layer 45a of the electrostatic chuck is made of glass, (4) money and the surface of the substrate (10). (4) The glass has a material close to the π grid, such as quartz. In addition, the sulphate and the sulphate are inferior to the glass substrate G because they are close to the glass of the uppermost layer 45a. Therefore, in the present embodiment, the most The thickness of the layer 45a is, for example, 1 〇μιη to 1 〇〇μηι, and the uppermost layer 4 is formed by a known method such as _material riding, coating, _ plate followed by peeling of the portion after the glass plate. In the embodiment, the upper layer 42 and the lower layer 43 of the electrostatic chuck 40a are formed by a dielectric oxide. The oxidation has a resistance to the fluorine gas (for example, Sf6, Cf4, etc.), so even if it is reversed In addition, it is difficult to ensure the insulation of the electrostatic chuck 40a, if the upper layer 45a is connected to the upper layer 42 and the lower layer 43 is formed by a thinner material. Since the fluorine-containing gas is often used for the treatment of the glass substrate, if the upper layer 42 and the lower layer 43 are formed of a glass material, the electropolymerized portion generated by the exposed fluorine gas may be damaged. Therefore, it is preferable that only the uppermost layer 45a is made of glass material', and the upper layer 42 and the lower layer side are oxidized by the fluorine-coated pulp. In the present embodiment, the uppermost layer 45a is provided on the entire substrate mounting surface 41, but is not limited thereto. 201240011 Fig. 3 is a cross-sectional view showing the configuration of an electrostatic chuck according to a second embodiment of the present invention. The electrostatic chuck 40b differs from the electrostatic chuck 4A of FIG. 2 in that the substrate mounting surface 41 is formed in order to reduce the contact area between the inner surface of the substrate G and the substrate mounting surface 41 on the surface of the upper layer 42 of the electrostatic chuck 4B. The portion surrounded by the outer peripheral portion (hereinafter referred to as "the embankment portion") is formed into an embossed shape, and only the embankment portion is provided with 4% of the uppermost layer composed of the glass material. In addition, the embossed shape refers to, for example, a portion of a plurality of convex island portions and a concave portion surrounding the island portion, which are arranged in a checkerboard shape like a circular or rectangular shape. The shape 'in other words, refers to a state in which a certain overhead view is embossed. According to the present embodiment, since the uppermost layer 45b made of a glass material is provided in the embankment portion on the substrate mounting surface 41 where the peeling electrification is likely to occur, the substrate holding portion and the substrate (the inner surface of the substrate) have the same The charging column can prevent the occurrence of peeling electrification of the embankment portion, thereby preventing the circuit element formed by the substrate from being damaged by the negative electrode and preventing the contamination impurities from being on the substrate G. FIG. 4 is the present invention. The electrostatic chuck of the third embodiment is configured as a wearer. The electrostatic device is different from the electrostatic chuck of Fig. 3. The substrate is mounted on the substrate. The uppermost layer 45c of the glass material is provided on both surfaces of the island portion. The substrate mounting surface of the upper layer 42 of the electrostatic chuck 4〇c in FIG. 4 is processed to be &, f large and formed on the surface of the embankment portion. The uppermost layer 45c of the glass material is formed on the surface of the embossed island portion surrounded by the glass material. The uppermost layer 45c2 composed of the glass material is formed on the surface of the embossed island portion surrounded by the glass material. According to the present embodiment, the uppermost layer of the electrostatic chuck 4c is made.攸 is the same material as the substrate 3 'The uppermost layer 4 is formed by the uppermost layer 45c2 formed at the embossed island portion surrounded by the uppermost layer 45cl ^ % of the embankment portion, so that it can be removed from the uppermost layer 45c and the substrate G of the substrate. The difference between the electrification columns between the inner surface constituent materials 201240011' can reduce the contact area between the inner surface of the substrate G and the uppermost layer 45c. Thereby, the occurrence of peeling electrification can be more reliably prevented, and the substrate G can be prevented from being damaged and formed on the substrate. The circuit element on the surface and the particles are attached to the substrate, etc. In the present embodiment, the thickness of the uppermost layer 45c is, for example, relatively thin, which can be easily formed by, for example, a coating method. The electrostatic chuck of the device to be installed is applied afterwards and the uppermost layer 45c is attached, and the uppermost layer 45c can be sufficiently matched even at the manufacturing site of the LCD. Further, the uppermost layer 45c composed of the glass material is used to prevent the electrostatic chuck from being placed on the electrostatic chuck 4c. The inner surface of the substrate g made of glass is in direct contact with the upper layer 42 made of alumina of the electrostatic chuck 4c. Fig. 5 is a configuration of an electrostatic chuck according to a fourth embodiment of the present invention. In the same manner as the electrostatic chuck 4c of the third embodiment shown in Fig. 4, the static electricity cooling device 40d forms an embossed shape surrounded by the embankment portion, and is different from the electrostatic chuck 4c of Fig. 4. The substrate mounting surface 41 of the upper layer 42 is set to a flat surface, and the uppermost layer 45d1 is formed of a glass material and is configured as a bank portion of the substrate mounting surface 41, and is provided with a glass material. The uppermost layer 45d2 is formed as an embossed island portion existing in a region surrounded by the embankment portion. The uppermost layer 45d in Fig. 5 is composed of the uppermost layer 45d1 and the uppermost layer 45d2. Even according to the embodiment, the substrate can be prevented. When the G is lifted, it is easy to cause peeling and charging, and it is possible to prevent contaminants such as particles from adhering to the substrate G, and to prevent damage to circuit elements formed on the surface of the substrate, and to prevent damage to the inner surface of the substrate G. In the present embodiment, the thickness of the uppermost layer 45d is, for example, 1 〇μιη to ι〇〇μηη, and the uppermost layer 45d is exemplified by, for example, spraying of a glass material, coating, adhesion of a glass plate, partial peeling of a glass plate, and the like. A method is known to form. Fig. 6 is a plan view showing a configuration of an electrostatic chuck according to a fifth embodiment of the present invention. The electrostatic clamp is disposed at the uppermost layer of the glass material near the lifting and lowering σ of the lifting ship in the base area. In FIG. 6, the net electric fixture 4〇e has a lift pin 21, and is provided for the purpose of loading the substrate G when the substrate G is loaded into the processing chamber 11 or when the substrate G is removed from the processing chamber. The uppermost layer 4 made of a glass material is provided on the peripheral portion of the opening 21a where the lift pin 21 is lifted and lowered. When the substrate G placed on the substrate mounting surface of the electrostatic chuck is lifted from the substrate mounting surface, the portion where the substrate G and the substrate mounting surface are first peeled off is the peripheral portion of the lift pin on which the substrate G is lifted. The peeling electrification is likely to occur in the peripheral portion of the lift pin. In the present embodiment, in view of such a situation, the uppermost layer 45f made of a glass material is provided in the peripheral portion of the opening 21a where the lift pin 21 is lifted and lowered. According to the present embodiment, since the uppermost layer 45e made of a glass material is provided in the peripheral portion of the opening 21a for raising and lowering the lift pin 2i which is likely to cause peeling and charging, the material is the same as the constituent material of the inner surface of the substrate G, so that the use can be effectively prevented. The lift pin 21 charges the peeling of the substrate G from the substrate mounting surface, thereby preventing the charging of the substrate ', thereby preventing damage to the circuit components formed on the surface of the substrate G and preventing contamination from adhering to the substrate. G and so on. The glass material is applied to all or part of the embankment of the substrate mounting surface 41 of the electrostatic chuck of the second embodiment to the fifth embodiment, but the plasma used for the plasma etching treatment applied to the substrate G is contained. In the case of a fluorine-based plasma of a fluorine ion or a fluorine radical, for example, a plasma generated by SF6 or CF4 is a main component. In some cases, the bank portion is consumed by the fluorine-based plasma. According to the sixth embodiment of the present invention, the bank portion of the substrate mounting surface 41 is made of an insulating ceramic such as alumina or oxidized particles which is resistant to fluorine plasma. 201240011 This is the sixth form of the electrostatic state of the hexagram. The household I# f has 4 〇 别 别 别 的 的 的 的 的 的 的 静电 静电 静电 静电 静电 静电 于 静电 静电 静电 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤 堤The fine dyke _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ (The lower % is the contact with a. Since the substrate mounting surface 41 on the electrostatic chuck 4Ge is formed in the embankment portion 47 which is likely to be miscellaneous, it is resistant to the surface of the substrate G. The electric 襞 施 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Since the constituent material is made of a glass material of smoke, it is possible to prevent not only the peeling electrification but also the occurrence of minute scratches caused by the difference in hardness between the inner surface of the substrate G and the substrate mounting surface 41, thereby preventing the micro-ship The liquid crystal display device has a poor performance. In addition, from the viewpoint of suppressing the occurrence of minute scratches, the embossed portion f48 can be made of a material having a hardness or a low hardness, for example, nitrogen can be used. Further, since the embossed portion 48 of the electrostatic chuck 4〇e is formed only of a glass material, it is only necessary to change the arrangement portion (for example, the coating portion) of the glass material. Changing the formation portion of the embossed portion 48, thereby Further, in the present embodiment, since the embankment portion 47 is formed of an insulating ceramic, the inner surface of the peripheral portion of the substrate G may be slightly or slightly damaged, but The peripheral portion of the substrate G corresponds to the peripheral portion of the display surface of the liquid crystal display device, and is outside the range in which the TFT array is formed. Therefore, the minute flaw has little possibility of affecting the display quality of the liquid crystal display device. 15 201240011 Fig. 8 is f7 A cross-sectional view of a first modification of the electric jig. The electrostatic chuck tearing system is provided with a bank formed of an insulating ceramic. The damper 48' is mainly made of an insulating ceramic and is formed of a glass material. The uppermost layer 45c3 is formed. The electrostatic chuck tear is different from the static power loss. The embossed portion 48 is not formed entirely of glass materials, and only the uppermost layer formed by the material is formed on the upper surface, so that it can be formed. The layer ' can be formed by a simple method such as a coating method: = ii, 45c, and the coating method can also be partially performed by, for example, refining of a glass material, followed by glazing of the glass plate. Stripping Fig. 9 is a cross-sectional view showing a second modification of the electrostatic chuck of Fig. 7. In Fig. 9, the electrostatic chuck 4〇g is provided with a bank portion 47 formed of an insulating ceramic body and The glass jujube embodies the slab (4) splicing part. The inner surface abutting part 49 is equipped with a base area 41. The scale is surrounded by the levee office 7. When the substrate G is placed on the static electricity 4 〇g, The inner surface of the substrate G is in contact with the embankment portion and the inner surface abutting portion 49. Fig. 10 is a cross-sectional view showing a third modification of the electrostatic chuck of Fig. 7. In Fig. 10, the electric power fixture 4Gh is provided with insulation. The embankment portion 47 formed by the investigation and the flat inner surface abutment portion % formed of the glass material are also used. The inner surface abutment portion 50 also surrounds the periphery thereof by the embankment portion 47 in the same manner as the inner surface abutment portion 49, and is formed with Most of the channels that become the flow path of the heat transfer gas (the groove. When the substrate is placed on the electrostatic chuck 40h, the inner surface of the substrate G abuts against the bank portion 47 and the inner surface abutting portion 50. Even if the electrostatic chuck 40g and the electrostatic chuck 4〇h are used, the inner surface abutting portions 49 and 50 which are in contact with the inner surface of the substrate g and the inner surface of the substrate G are made of 201240011.
相同玻璃材所構成，故不僅可防止剝離帶電，也抑制 内面因其和基板載置面狀硬度差所發生之微小U舰基板G 以上，以上述各貫施形態來詳細說明了本發明，惟本發明並 不限定於此等實施形態。 【圖式簡單說明】 圖1係示意顯示具備有適用本發明之實施形態之靜電夾具的 基板載置台之基板處理裝置之構成截面圖。 圖2係顯示本發明之第1實施形態之靜電夾具構成截面圖。 圖3係顯示本發明之第2實施形態之靜電夾具構成截面圖。 圖4係顯示本發明之第3實施形態之靜電夾具構成截面圖。 圖5係顯示本發明之第4實施形態之靜電夾具構成截面圖。 圖6係顯示本發明之第5實施形態之靜電夾具構成截面圖。 =糸顯示本㈣之第6實施雜之靜電爽具構賴面圖。 圖係顯不圖7之靜電夾具之第1變形例之構成截面圖。 圖9係顯示圖7之靜電夾具之第2變形例之構成戴面圖。 圖10係顯示圖7之靜電炎具之第3變形例之構成截面圖。 【主要元件符號說明】 10 40a〜4〇e 41 42 43 基板處理裝置 靜電夾具 基板載置面 上層 下層 17 201240011 44 靜電電極板 45a~45e 最上層Since the same glass material is used, it is possible to prevent the peeling from being electrified, and to suppress the inner surface of the micro U-board substrate G which is caused by the difference in hardness between the inner surface and the substrate mounting surface, and the present invention has been described in detail in the above-described respective embodiments. The present invention is not limited to these embodiments. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the structure of a substrate processing apparatus including a substrate mounting table to which an electrostatic chuck according to an embodiment of the present invention is applied. Fig. 2 is a cross-sectional view showing the configuration of an electrostatic chuck according to a first embodiment of the present invention. Fig. 3 is a cross-sectional view showing the structure of an electrostatic chuck according to a second embodiment of the present invention. Fig. 4 is a cross-sectional view showing the structure of an electrostatic chuck according to a third embodiment of the present invention. Fig. 5 is a cross-sectional view showing the structure of an electrostatic chuck according to a fourth embodiment of the present invention. Fig. 6 is a cross-sectional view showing the structure of an electrostatic chuck according to a fifth embodiment of the present invention. = 糸 shows the sixth embodiment of this (4). The figure shows a cross-sectional view of a first modification of the electrostatic chuck of Fig. 7. Fig. 9 is a perspective view showing a configuration of a second modification of the electrostatic chuck of Fig. 7. Fig. 10 is a cross-sectional view showing the structure of a third modification of the electrostatic device of Fig. 7. [Main component symbol description] 10 40a~4〇e 41 42 43 Substrate processing device Electrostatic chuck Substrate mounting surface Upper layer Lower layer 17 201240011 44 Electrostatic electrode plate 45a~45e Uppermost layer