200839931 九、發明說明 【發明所屬之技術領域】 本發明係關於將液晶顯示器（Liquid Crystal Display )或有機電激發光顯示器（Electroluminescence Display) 等之平面顯示器（Flat Panel Display)用的基板予以保持 之基板保持機構及電漿處理裝置。 【先前技術】 於平面顯示器（FPD)的面板製造中，——般係於玻璃 等之由絕緣體所構成之基板上形成有像素的裝置或是電極 或配線等。於此面板製造的各項步驟當中，蝕刻、CVD、 灰化、濺鍍等之精細加工，係藉由電漿處理裝置來進行。 電漿處理裝置，例如於可進行減壓之處理容器內，將基板 載置於具有構成下部電極之基座之載置台上，並將高頻電 力供應至基座，藉此於基板上形成處理氣體的電漿，並藉 由此電漿，於基板上進行飩刻等特定處理。 此時，必須抑制因電漿處理時的發熱所導致之溫度上 升，而將基板的溫度控制爲一定。因此，較多係採用，將 經過冷卻裝置進行溫度調節後的冷媒循環供應至載置台內 的冷媒通路中，同時使He氣體（氨氣）等之傳熱性較佳 的氣體（傳熱氣體），通過載置台中並供應至基板的內面 而間接地冷卻基板之方式。此冷卻方式，由於需抵抗He 氣體的供應壓力而將基板固定並保持於載置台上，因此， 係於載置台上設置基板保持部，並例如藉由靜電吸附力， -4- 200839931 將基板吸附並保持於基板保持部的基板保持面。 於基板對載置台上的基板保持面產生位置偏離時，基 板保持面會於基座上暴露出，一旦於此狀態下對基座施加 高頻電力而產生電漿，則可能產生異常放電而導致基座的 損壞。因此，若能夠於產生電漿前檢測出基板的位置偏離 ，則可防止異常放電的產生於未然。 〔專利文獻1〕日本特開2005- 1 1 6645號公報 〔專利文獻2〕日本特開平1 1 - 1 86370號公報 〔專利文獻3〕日本特開平4_3 59539號公報 【發明內容】 (發明所欲解決之課題） 近年來，FPD用的絕緣基板，其大型化的要求乃逐漸 增高。如此的FPD用基板，由於其尺寸遠較半導體晶圓還 大，因此，即使使用搬運臂等之搬運機構，亦非常難以正 確地將基板載置於載置台上。因此，於FPD用基板诗，必 須構成爲可在不會產生異常放電之範圍內，容許某種程度 之基板的位置偏離。 關於針對此位置偏離之對策方法，於半導體晶圓的技 術中，爲人所知者例如有專利文獻1、2所記載者。這些 技術爲，藉由在環形邊形成傾斜面，或是將傾斜的突起設 置於載置有半導體晶圓之區域的外側，即使半導體晶圓產 生位置偏離而使其端部卡合於傾斜面或突起的斜面，亦可 使傾斜面滑落而修正位置偏離。 -5- 200839931 然而，在尺寸遠較半導體晶圓還大之FPD用基板中， 由於其重量亦遠較半導體晶圓還大，即使FPD用基板的端 部卡合於傾斜面或突起的斜面，亦不易使傾斜面滑落而維 持在上抬的狀態，因此，此技術之無法修正位置偏離的機 率極高。 此外，如專利文獻3所記載的技術般，亦有一種於載 置台的上部設置壓力測定孔，經由壓力測定孔將壓力測定 氣體供應至載置台與半導體晶圓之間，並監測壓力測定氣 體的壓力之方法。於此方法中，例如在不具有半導體晶圓 時或是靜電保持力較小時，由於壓力測定氣體會從壓力測 定孔洩漏而使壓力降低，因此可藉由監測該壓力而檢測出 載置台上是否有半導體晶圓以及該保持狀態。然而，此方 法並無法檢測出半導體晶圓的位置偏離。 因此，本發明係鑒於上述問題而創作之發明，其目的 在於提供一種可容許某種程度之被處理基板的位置偏離， 且可防止異常放電的產生於未然之基板保持機構及電漿處 理裝置。 (用以解決課題之手段）. 爲了解決上述課題，根據本發明的某項觀點，係提供 一種基板保持機構，爲於產生電漿之空間內載置並保持由 絕緣體所構成之矩形的被處理基板之基板保持機構，其特 徵爲具備：矩形的載置台，載置並保持前述被處理基板； 氣體流路，用以將氣體供應至前述載置台與以此載置台的 -6 - 200839931 基板保持面所保持之被處理基板之間；複數個氣孔，形成 於前述載置台的基板保持面，且將來自於前述氣體流路的 氣體導引至前述基板保持面上；凹部，使形成有前述氣、孔 之區域成爲前述基板保持面的內側，且涵蓋前述氣孔形成 區域的全面而形成；框部，形成於前述基板保持面之前述 氣孔形成區域的外周；複數個基板位置偏離檢測孔，形成 於前述框部；連通路徑，連通前述基板位置偏離檢測孔與 前述凹部；壓力測定手段，測定前述氣體流路的壓力；以 及位置偏離檢測手段，於將被處理基板保持於前述載置台 上時，根據來自於前述壓力測定手段的檢測壓力，檢測出 來自於前述氣孔的氣體洩漏量，並根據該檢測結果，檢測 出是否產生前述特定的位置偏離容許量以上之前述被處理 基板的位置偏離。 根據此構成之本發明，傳熱氣體（例如He氣體）係 經由連通路徑而流通於基板位置偏離檢測孔。因此，於被 處理基板未產生位置偏離時，基板位置偏離檢測孔係由被 處理基板所阻塞而使氣體不會洩漏，相對於此，於被處理 基板產生使基板保持面的一部分暴露出之位置偏離時，由 於氣體從基板位置偏離檢測孔之洩漏量增大，因此可檢測 出位置偏離。藉此，可容許某種程度之被處理基板的位置 偏離，且可防止因被處理基板的位置偏離所造成之異常放 電的產生於未然。 此時，上述基板位置偏離檢測孔，較理想係形成於前 述框部的4個角部。藉此，能夠僅藉由此4個基板位置偏 200839931 離檢測孔，不僅於被處理基板平行地對基板保持面產生位 置偏離時，於被處理基板斜向地對基板保持面產生位置偏 離時，亦可檢測出被處理基板的位置偏離。此外，於上述 凹部的下面，可在形成有此凹部之區域內設置有保持基板 之多數個凸部。 爲了解決上述課題，根據本發明的其他觀點，係提供 一種基板保持機構，爲於產生電漿之空間內載置並保持由 絕緣體所構成之被處理基板之基板保持機構，其特徵爲具 備：載置台，載置並保持前述被處理基板；氣體流路，用 以將氣體供應至前述載置台與以此載置台的基板保持面所 保持之被處理基板之間；複數個氣孔，形成於前述載置台 的基板保持面，且將來自於前述氣體流路的氣體導引至前 述基板保持面上；位置偏離檢測用突起，於使前述被處理 基板位於前述載置台之基板保持面的基準位置時，於較該 被處理基板的周緣更外側，僅距離特定的位置偏離容許量 並沿著前述周緣而配設，且以較前述載置台的基板保持面 更高之方式地突出；壓力測定手段，測定前述氣體流路的 壓力；以及位置偏離檢測手段，於將被處理基板保持於前 述載置台上時，根據來自於前述壓力測定手段的檢測壓力 ，檢測出來自於前述氣孔的氣體洩漏量，並根據該檢測結 果，檢測出是否產生前述特定的位置偏離容許量以上之前 述被處理基板的位置偏離。 爲了解決上述課題，根據本發明的其他觀點，係提供 一種電漿處理裝置，爲藉由將處理氣體導入至處理室內並 -8 - 200839931 產生前述處理氣體的電漿，而對處理室內的載置台上所載 置並保持之由絕緣體所構成之被處理基板’進行特定的電 漿處理之電漿處理裝置，其特徵爲具備：氣體流路，用以 將氣體供應至前述載置台與以此載置台的基板保持面所保 持之被處理基板之間；複數個氣孔，形成於前述載置台的 基板保持面，且將來自於前述氣體流路的氣體導引至前述 基板保持面上；位置偏離檢測用突起，於使前述被處理基 板位於前述載置台之基板保持面的基準位置時，於較該被 處理基板的周緣更外側，僅距離特定的位置偏離容許量並 沿著前述周緣而配設，且以較前述載置台的基板保持面更 高之方式地突出；壓力測定手段，測定前述氣體流路的壓 力；以及位置偏離檢測手段，於將被處理基板保持於前述 載置台上時，根據來自於前述壓力測定手段的檢測壓力， 檢測出來自於前述基板位置偏離檢測孔的氣體洩漏量，並 根據該檢測結果，檢測出是否產生前述特定的位置偏離容 許量以上之前述被處理基板的位置偏離。 根據此構成之本發明，係從被處理基板的基準位置僅 距離特定的基板位置偏離容許量而形成位置偏離檢測用突 起，藉此，於被處理基板超過特定的位置偏離容許量而產 生位置偏離時，由於被處理基板的一部分上抬至位置偏離 檢測用突起，使來自於氣孔之氣體的洩漏量增大，因此能 夠檢測出被處理基板的位置偏離。藉此，由於可在被處理 基板上形成電漿前檢測出位置偏離，因此可容許某種程度 之被處理基板的位置偏離，且可防止因被處理基板的位置 -9 - 200839931 偏離所造成之異常放電的產生於未然。 此時，上述位置偏離容許量，較理想係設定爲將被處 理基板保持於前述載置台時’不會使前述被處理基板的基 板保持面暴露出之範圍。藉此，例如於基板產生從傳熱氣 體的氣孔形成區域中偏離之較大的位置偏離時，當然會使 傳熱氣體從氣孔之洩漏量增大，但即使爲使基板保持面的 一部分暴露出之微小的位置偏離時，亦會使傳熱氣體從氣 孔之洩漏量增大，因此可檢測出位置偏離。藉此，可容許 某種程度之被處理基板的位置偏離，且可防止因被處理基 板的位置偏離所造成之異常放電的產生於未然。 此外，上述載置台例如具備：基座；設置於前述基座 上，且以前述基板保持面保持前述被處理基板之基板保持 部；以及以包圍前述基座及前述基板保持部的周圍之方式 地配設之外框部；前述位置偏離檢測用突起，例如形成於 前述外框部的上部。根據此，可在將位置偏離檢測用突起 形成於外框部的上部之簡單的構成下，檢測出被處理基板 的位置偏離，因此可防止異常放電的產生於未然。 此外，上述基板保持面的尺寸，較理想係設定爲較前 述被處理基板的尺寸僅小了尺寸2a，若以前述位置偏離容 許量爲尺寸b，則各尺寸a、b的關係爲a > b。藉由將位 置偏離檢測用突起配置於此位置，即使被處理基板例如從 基準位置中產生偏離，於被處理基板未上抬至位置偏離檢 測用突起之位置中，基板保持面的一部分亦不會暴露出， 因此可容許位置偏離。相對於此，於被處理基板產生使基 -10- 200839931 板保持面的一*部分暴露出之k置偏離時’由於被處理基板 係上抬至位置偏離檢測用突起’使來自於氣孔之氣體的洩 漏量增大，而能夠檢測出此位置偏離。藉此’可容許某種 程度之被處理基板的位置偏離’且可防止因被處理基板的 位置偏離所造成之異常放電的產生於未然。 此外，若以上述外框部之上部的高度爲hi，以前述位 置偏離檢測用突起之上部的高度爲h2 ’以前述基板保持面 的高度爲h，則前述各高度hi、h、h2的關係較理想爲 hl^h<h2。藉由將位置偏離檢測°用突起配置於此位置， 於被處理基板上抬至位置偏離檢測用突起時，可將被處理 基板從基板保持面舉起，因此可增大氣體從氣孔之洩漏量 〇 此外，上述位置偏離檢測用突起，例如可沿著前述被 處理基板的周緣形成爲框狀，此外，上述位置偏離檢測用 突起，可形成爲棋子狀；沿著前述被處理基板的周緣，設 置複數個前述棋子狀的位置偏離檢測用突起。根據此位置 偏離檢測用突起，僅需在將位置偏離檢測用突起裝設於必 要的位置之極爲簡單的構成下，檢測出被處理基板的位置 偏離。再者，上述位置偏離檢測用突起，亦可設置爲可裝 卸。藉此，可容易進行位置偏離檢測用突起33 2的交換。 此外，可因應基板的形狀等而於適當的位置改變配置，並 且可與具有適當形狀者進行交換。 上述基板保持部，例如可於下部電介質層與上部電介 質層之間包夾電極板而構成，並藉由因對前述電極板施加 -11 - 200839931 特定電壓所產生之靜電吸附力，而將前述被處理基板吸附 並保持於前述基板保持面。 發明之效果： 根據本發明，係能夠提供一種可容許某種程度之被處 理基板的位置偏離，且可防止異常放電的產生於未然之基 板保持機構及電漿處理裝置。 【實施方式】 以下係參照附加圖式，詳細說明本發明之較佳的實施 型態。於本說明書及圖式中，關於實質上具有同一功能構 成之構成要素，係附加同一圖號並省略其重複說明。 (電漿處理裝置的構成例） 首先參照圖式，說明將本發明適用於具備複數個電漿 參 處理裝置之多反應室形式的處理裝置時之實施型態。第1 圖係顯示本實施型態之處理裝置1 00之外觀立體圖。同圖 所示之處理裝置1 00，係具備用以對平面顯示器用基板（ FPD用基板）G進行電漿處理之3個電漿處理裝置。電漿 處理裝置分別具備處理室200。 於處理室200內，例如設置有載置FPD用基板G之 載置台，於此載置台的上方，設置有用以導入處理氣體（ 例如製程氣體）之蓮蓬頭。載置台係具備構成下部電極之 基座，與此平行而對向設置之蓮蓬頭，亦兼具上部電極之 -12- 200839931 功能。於各處理室200中，可進行同一處理（例如蝕刻處 理等），或進行互爲不同的處理（例如蝕刻處理及灰化處 理等）。處理室200內的具體構成例，將於之後詳述。 各處理室200係分別夾介閘閥1 02而連結於剖面呈多 角形狀（例如剖面呈矩形狀）之搬運室1 1 0的側面。此外 ，承載室120係夾介閘閥104而連結於搬運室110。基板 搬出入機構130係夾介閘閥106而鄰接設置於承載室120 〇 於基板搬出入機構1 3 0，係分別鄰接設置有2個索引 器140。於索引器140，係載置有收納FPD用基板G之卡 匣142。卡匣1 42係構成爲可收納複數片（例如25片）的 FPD用基板G。 於藉由此電漿處理裝置對FPD用基板G進行電漿處 理時，首先藉由基板搬出入機構130將卡匣142內的FPD 用基板G搬入至承載室1 2 0內。此時，於承載室1 2 0內若 存在處理完畢的FPD用基板G，則將該處理完畢的FPD 用基板G從承載室120內搬出，並與未處理的FPD用基 板G置換。一旦將FPD用基板G搬入至承載室120內， 則關閉聞閥1 〇 6。 接著，將承載室12〇內減壓至特定的真空度後，開啓 搬運室110與承載室120之間的閘閥104。之後藉由搬運 室1 1 〇內的搬運機構（圖中未顯示），將承載室1 20內的 FPD用基板G搬入至搬運室1 1〇內，之後關閉閘閥104。 開啓搬運室1 10與處理室200之間的閘閥102，並藉 -13- 200839931 由上述搬運機構，將未處理的FPD用基板G搬入至處理 室2 00內的載置台。此時，若存在處理完畢的FPD用基板 G，則將該處理完畢的FPD用基板G搬出，並與未處理的 FPD用基板G置換。 於處理室200內，係經由蓮蓬頭將處理氣體導入至處 理室內，並將高頻電力供應至下部電極或上部電極或是下 部電極與上部電極兩者，而於下部電極與上部電極之間產 生處理氣體的電漿，藉此對載置台上所保持之FPD用基板 G進行特定的電漿處理。 (處理室的構成例） 接著參照圖式，說明處理室200的具體構成例。在此 ，係說明將本發明之電漿處理裝置，適用於例如對玻璃基 板等之FPD用絕緣基板（以下亦有僅稱爲「基板」時）進 行蝕刻之電容耦合電漿（CCP ·· Capacitively Coupled Plasma)蝕刻裝置時之處理室的構成例。第2圖係顯示處 理室200的槪略構成之剖面圖。 第2圖所示之處理室200，係具備例如由表面經陽極 氧化處理（氧化鋁膜處理）後之鋁所構成之大致呈角柱形 狀的處理容器202。處理容器202爲接地。於處理容器 2 02內的底部，係配設有具備構成下部電極之基座310之 載置台3 00。載置台3 00係具有固定並保持矩形的基板G 之基板保持機構的功能，並形成爲對應矩形的基板G之矩 形形狀。此載置台的具體構成例，將於之後詳述。 -14 - 200839931 於載置台3 〇〇的上方，係以與基座3 1 0呈平行地對向 之方式，對向配置有具備作爲上部電極的功能之蓮蓬頭 210。蓮蓬頭210係支撐於處理容器202的上部，於內部 具有緩衝室222，且於與基座3 10對向之下面，形成有吐 出處理氣體之多數個吐出孔224。此蓮蓬頭210爲接地， 且與基座310 —同構成一對的平行平板電極。 於蓮蓬頭210的上面設置有氣體導入口 226，氣體導 φ 入管228連接於此氣體導入口 226。處理氣體供應源234 係夾介開閉閥230、質量流量控制器（MFC: Mas sFlow Controller ) 232而連接於氣體導入管228。 來自於處理氣體供應源234之處理氣體，係藉由質量 流量控制器（MFC ) 232控制爲特定流量，並通過氣體導 入口 226而導入至蓮蓬頭210的緩衝室222。處理氣體（ 蝕刻氣體）例如可使用鹵素系氣體、02氣體、Ar氣體等 ，在此領域中一般所使用的氣體。 # 於處理室200的側壁，設置有用以開閉基板搬出入口 204之閘閥102。此外，於處理室200的側壁下方，設置 有排氣口，包含真空泵浦（圖中未顯示）之排氣裝置2 09 ，係夾介排氣管2 0 8而連接於排氣口。以此排氣裝置2 0 9 對處理室200的室內進行排氣，藉此於電漿處理中，可將 處理室200內維持於特定的真空環境（例如i〇mT〇rr =約 1 .33Pa ) ° (適用基板保持機構之載置台的構成例） -15- 200839931 在此，係參照第2圖、第3圖，說明適用本發明的基 板保持機構之載置台3 00的具體構成例。第3圖係用以說 明載置台3 00之傳熱氣體供應機構的構成例之圖式。第3 圖爲簡化第2圖所示之載置台3 〇 0的上部分的剖面而表示 者。於第3圖中，爲了簡化說明，係省略第2圖所示之靜 電保持部320。 如第2圖所示，載置台3 0 0係具備：絕緣性的底座構 件3 02 ;以及設置於此底座構件3 02上之由導電體所構成 之矩形方塊狀的基座3 10。如第2圖所示，基座3 1 0的側 面係以絕緣覆膜3 1 1所覆蓋。 於基座3 1 0上，係設置有作爲以基板保持面保持基板 G之基板保持部的一例之靜電保持部320。靜電保持部 320，例如於下部電介質層與上部電介質層之間包夾電極 板3 22而構成。並且以構成載置台3 00的外框，且包圍上 述底座構件3 02、基座310及靜電保持部320的周圍之方 式地配設有例如由陶瓷或石英的絕緣構件所構成之矩形框 狀的外框部3 3 0。 靜電保持部320之下部電介質層及上部電介質層，較 理想爲以其體積固有電阻値爲1χ 1〇14Ω · cm以上的絕緣體 ，例如以二氧化鋁（Al2〇3 )及二氧化鉻（Zr02 )的至少 一種爲主成分之陶瓷所構成。電極板322可爲任意的導電 材料，例如由鎢所構成。可藉由一般所知的電漿熔接法， 於基座310上依序層積下部電介質層、電極板322及上部 電介質層的3層而形成。 -16- 200839931 於靜電保持部320的電極板322，係夾介開關3 16而 電性連接於直流（D C )電源3 1 5。開關3 1 6，例如係對電 極板322切換DC電源315與接地電位。於電極板322與 直流（D C )電源3 1 5之間，可設置用以阻隔來自於基座 3 1 0側的局頻，並阻止基座3 1 0側的高頻洩漏至D C電源 3 1 5側之局頻阻隔部（圖中未顯τκ )。局頻阻隔部，較理 想係由具有1 ΜΩ以上的高電阻之電阻器或可讓直流通過 之低通濾波器所構成。 若開關3 1 6切換至DC電源3 1 5側，則來自於DC電 源3 15之DC電壓會施加於電極板3 22。於此DC.電壓爲正 極性的電壓時，於基板G的上面，係吸引負電荷（電子、 負離子）並累積。藉此，包夾基板G及上部電介質層而互 相拉引之靜電吸附力，亦即庫倫力，係於基板G上面之負 的面電荷與電極板3 22之間產生作用，以此靜電吸附力， 使基板G吸附並保持於載置台300。若開關316切換至接 地側，則解除上述庫倫力，亦即靜電吸附力。 高頻電源3 1 4的輸出端子，係夾介匹配器3 1 2而電性 連接於基座3 1 0。高頻電源3 1 4的輸出頻率數，係從相對 較高的頻率數中選出，例如爲13.56MHz。來自於高頻電 源314的高頻電力，可兼用爲電漿產生用及偏壓用。亦即 ，於電漿處理中，藉由施加於基座310之來自高頻電源 314的高頻電力，可於基板G上產生處理氣體的電漿PZ， 並且將電漿PZ中的離子拉引至基板G的上面（被處理面 )。藉此係於基板G上進行特定的電漿蝕刻。 -17- 200839931 於基座3 1 0的內部，設置有冷媒流路3 40，調整爲特 定溫度後的冷媒，係從冷卻裝置（圖中未顯示）中流通至 冷媒流路340中。藉由此冷媒’可將基座310的溫度調整 爲特定溫度。 載置台3 0 0係於靜電保持部3 2 0的基板保持面與基板 G的內面之間，具備以特定的壓力供應傳熱氣體（例如He 氣體）之傳熱氣體供應機構。傳熱氣體供應機構係經由基 φ 座3 1 0內部的氣體流路3 5 2，以特定的壓力將傳熱氣體供 應至基板G的內面。 傳熱氣體供應機構，具體而言例如構成爲第3圖所示 者。亦即，於基座310的上面及靜電保持部320，設置有 多數個氣孔3 54，這些氣孔3 54係與上述氣體流路352連 通。如第15圖A、第1 5圖B所示，氣孔3 5 4係以特定間 隔，排列配置多數個於內側的氣孔形成區域R，此氣孔形 成區域R例如僅距離基板保持面外周爲尺寸c。 # 供應例如作爲傳熱氣體的He氣體之He氣體供應源 3 64，係夾介壓力調整閥（PC V : Pressure Control Valve ) 3 62而連接於氣體流路3 52。壓力調整閥（PCV ) 3 62，係 以使供應至氣孔3 5 4側之He氣體的壓力成爲特定壓力之 方式地調整流量。 壓力調整閥（PCV ) 362，係具備例如測定出於氣體 流路3 5 2中流通之傳熱氣體的壓力之壓力測定手段的1例 之流體壓力計（例如電容式流體壓力計（CM )) 3 63，並 且使圖中未顯示之流量調節閥（例如壓電閥）、流量計、 -18- 200839931 控制作爲流量調節閥的壓電閥之控制器一體地形成而構成 。之後，根據以流體壓力計3 63所測定之He氣體的壓力 ，以例如經由PID控制使氣壓成爲一定之方式，使控制器 控制壓電閥而控制He氣體的流量。 這些壓力調整閥（PCV ) 3 62、He氣體供應源3 64， 係分別連接於控制處理裝置1 00的各部之控制部400。控 制部400係控制He氣體供應源364使He氣體流出，藉由 壓力調整閥（PCV) 3 62將He氣體調整於特定的流量並供 應至氣體流路3 52。藉此，He氣體係通過氣體流路3 52及 氣孔3 5 4，以特定的壓力供應至基板G的內面。此時，控 制部4 0 0係藉由壓力調整閥（P C V ) 3 6 2的流體壓力計 3 6 3，測定氣體流路3 5 2的壓力，並根據所測定之壓力， 例如於將基板G予以靜電吸附時，可監測He氣體的浅漏 量。 於上述中，係使用流體壓力計3 63與流量調節閥一體 地形成於氣體流路3 52而成之壓力調整閥（PCV) 3 62, 但並不限定於此，流體壓力計3 63與流量調節閥亦可另外 設置氣體流路3 52。此外，流體壓力計並不限定於電容式 流體壓力計，亦可使用種種的流體壓力計，流量調節閥亦 不限定於壓電閥，例如可爲螺管閥。 此傳熱氣體（例如He氣體）的浅漏量，於基板產生 位置偏離時會產生變化，因此，本發明者們係針對是否可 錯由傳熱氣體之沒漏量的變化來檢測出基板的位置偏離而 進行探討。惟尺寸遠較半導體晶圓還大之FPD用基板，仍 -19- 200839931 具有其獨自的問題。 於FPD用基板般之尺寸極大的基板G中，相較於尺 寸遠較FPD用基板還小之半導體晶圓，即使使用搬運臂等 之搬運機構，亦非常難以正確地將基板載置於載置台上。 因此，以往爲了可容許某種程度之基板G的位置偏離，如 第4圖、第5圖所示，係將外框部333的上面與載置台 301的載置面（靜電保持部的基板保持面）設定爲幾乎相 同的高度，以使外框部333的上面不會從載置台301的載 置面突出。 於此構成中，如第4圖所示，於基板G產生從He氣 體之氣孔354的形成區域R中偏離之較大的位置偏離時， 由於He氣體會從氣孔3 54的形成區域R上之不具有基板 G的部分中洩漏，因此He氣體的洩漏量會變大。因此， 此時藉由監測He氣體的洩漏量而檢測出基板G的位置偏 離。 相對於此，如第5圖所示，於基板G產生未從He氣 體之氣孔354的形成區域R中偏離之微小的位置偏離時， 由於在氣#孔3 54的形成區域R上具有基板G，而使He氣 體的洩漏量幾乎不會改變，因而無法檢測出基板G的位置 偏離。 然而，即使基板G的位置偏離爲未從氣孔3 54的形成 區域R中偏離之程度，但仍使基座3 10上的一部分（基板 保持面的一部分）暴露出，因此如第5圖所示，於基板G 上形成電漿PZ時會產生異常放電，而可能導致基板G的 -20- 200839931 損壞。 因此，於本實施型態中，係於外框部的上部，從基板 的基準位置僅距離特定的基板位置偏離容許量而形成位置 偏離檢測用突起，藉此，於基板超過特定的基板位置偏離 容許量而產生位置偏離時，係利用基板的一部分上抬至位 置偏離檢測用突起，使來自於氣孔之傳熱氣體的洩漏量增 大之情況，而能夠檢測出基板G的位置偏離。 根據此，例如於基板產生從傳熱氣體的氣孔形成區域 中偏離之較大的位置偏離時，當然會使傳熱氣體從氣孔之 洩漏量增大，但即使爲使基座上的一部分（基板保持面的 一部分）暴露出之微小的位置偏離時，·亦會使傳熱氣體從 氣孔之洩漏量增大，因此可檢測出位置偏離。例如，可藉 由控制部400，從壓力調整閥（PCV ) 3 62的流體壓力計 3 63所檢測的壓力中，根據於氣體流路3 52中流通之傳熱 氣體的壓力而監測傳熱氣體的洩漏量，於洩漏量超過預定 的設定値時，可判斷出基板G產生位置偏離。如此，控制 部4 0 0係構成基板G的位置偏離檢測手段。藉此，可於基 板G上形成電漿PZ前檢測出位置偏離，因此可防止因基 板G的位置偏離所造成之異常放電的產生於未然。 接著參照圖式，說明本實施型態之位置偏離檢測用突 起的構成例。第3圖爲於外框部3 3 0的上部形成階部，並 以此階部爲位置偏離檢測用突起3 3 2時之構成例。 以第3圖爲例，說明位置偏離檢測用突起3 3 2的配置 例。如第3圖所示，係以基板G的尺寸爲LG，以載置台 -21 - 200839931 3 00之基板保持面，亦即靜電保持部320之基板保持面的 尺寸爲L s。在此的尺寸，爲基板G等之矩形形狀當中任 一邊的長度。 此時，基板保持面的尺寸Ls，係設定爲較基板G的 尺寸LG僅小了尺寸2a。亦即，若設定使基板保持面與基 板G的中心一致，且基板G的各邊與基板保持面的各邊 平行之基板G的位置爲基準位置，則於基板G位於基準 位置時，基板G的周端部，係涵蓋全周而僅從基板保持面 突出尺寸2a。 此外，若於僅距離基板G位於基準位置時之基板G 的周緣爲尺寸b之位置上，形成位置偏離檢測用突起3 3 2 ，則上述各尺寸a、b的關係較理想爲a > b。藉由將位置 偏離檢測用突起332配置於此位置，如第6圖所示，即使 基板G從基準位置中產生偏離，於基板G未上抬至位置 偏離檢測用突起3 3 2之位置中，基座3 1 0上的一部分（基 板保持面的一部分）亦不會暴露出。此尺寸b爲位置偏離 容許量，從基板G的周緣至尺寸b爲止之範圍，爲基座 310上的一部分（基板保持面的一部分）不會暴露出之範 圍，於此範圍中，由於不會產生異常放電，因此成爲可容 許基板G的位置偏離之範圍。 相對於此，如第7圖所示，於基板G產生使基座3 10 上的一部分（基板保持面的一部分）暴露出之位置偏離時 ，由於基板G係上抬至位置偏離檢測用突起3 3 2，使來自 於氣孔3 54之He氣體的洩漏量增大，而能夠檢測出此位 -22- 200839931 置偏離。藉此，可容許某種程度之基板G的位置偏離，且 可防止因基板G的位置偏離所造成之異常放電的產生於未 妖。 再者，若以外框部330之上部（較位置偏離檢測用突 起3 3 2更爲內側之較低的部分）的高度爲h 1，以位置偏離 檢測用突起3 3 2之上部的高度爲h2，以基板保持面的高度 爲h，則各高度h 1、h、h2的關係較理想爲h 1 $ h < h2。 藉由將位置偏離檢測用突起3 3 2配置於此位置，於基板G 上抬至位置偏離檢測用突起3 32時，可將基板G從基板保 持面舉起，因此可增大He氣體從氣孔之洩漏量。 此外，可在將位置偏離檢測用突起3 32形成於外框部 3 3 0的外部之簡單的構成下，檢測出基板G的位置偏離， 因此可防止因基板G的位置偏離所造成之異常放電的產生 於未然。此位置偏離檢測用突起3 3 2，係沿著於基板G位 於基板保持面的基準位置時之基板G的外周緣而形成。如 第8圖所示，位置偏離檢測用突起3 3 2，係於外框部330 上，從距離位於以虛線所表示之基板保持面的基準位置之 基板G爲僅相當於上述位置偏離容許量之尺寸b的位置， 往外側涵蓋外框部3 3 0的全周而形成。外框部3 3 0並不一 定需一體地構成，亦可藉由將分割爲複數個框構件予以組 合之分割構造所構成。此外’關於位置偏離檢測用突起 3 3 2，可一體地構成或是以分割構造所構成。 此外，如第9圖所示，亦可將形成爲棋子狀的位置偏 離檢測用突起3 3 2，沿著基板G的外周而配置複數個。此 -23- 200839931 時，例如沿著基板G的較短邊各配置1個，沿著較長邊以 等間隔各配置2個。惟位置偏離檢測用突起3 3 2的數目並 不限定於此。例如，可沿著基板G的各邊設置2個或3個 以上的位置偏離檢測用突起3 3 2，此外，亦可將設置於基 板G的各邊之位置偏離檢測用突起332設定爲相同數目或 是不同數目。 關於此位置偏離檢測用突起3 3 2，可如第1 0圖所示， 於外框部3 3 0上與外框部3 3 〇 —體地構成，此外，亦可如 第11圖、第12圖所示，與外框部330爲不同個體且以可 裝卸的方式而構成。第1 1圖爲於位置偏離檢測用突起3 3 2 的下側設置螺釘部，並螺合固定於外框部3 3 0時之例子。 此外，第1 2圖爲於位置偏離檢測用突起3 3 2設置螺孔， 且使螺釘通過此螺孔而螺合固定時之例子。如此，可藉由 將檢測用突起3 3 2以可裝卸的方式設置於外框部3 3 0，而 容易進行位置偏離檢測用突起3 3 2的交換。此外，可因應 基板G的形狀等而於適當的位置改變配置，並且可與具有 適當形狀者進行交換。 此外，位置偏離檢測用突起3 3 2，可如第1 3圖所示， 於使基板G位於基板保持面的基準位置時，沿著基板G 的外周而形成爲框狀，此外，亦可如第14圖所示，以螺 釘等將L字形狀的位置偏離檢測用突起3 3 2分別固定於4 個角部。若爲此棋子狀的位置偏離檢測用突起332，則可 在以螺釘裝設於外框部的上部之簡單構成下，檢測出基板 G的位置偏離。此外，外框部3 30並不一定需一體地構成 -24 - 200839931 ，亦可藉由將分割爲複數個框構件予以組合之分割構造所 構成。此外，關於第13圖所示之位置偏離檢測用突起332 ，可一體地構成或是以分割構造所構成。 上述載置台3 0 0之基板保持面的構成，並不限定於第 3圖所示者。如第15圖A、第15圖B所示，亦可於基板 保持面上，涵蓋氣孔3 54的形成區域R設置極淺的凹部 3 5 6。藉由此凹部3 5 6，於氣孔形成區域R與基板G之間 形成空間，從各氣孔3 54所噴出之He氣體，係進入於由 凹部3 5 6所形成之空間內，因此可藉由He氣體，對基板 G的面內進行更一致的溫度調整。此外，於上述凹部3 5 6 的下面，於形成有此凹部3 5 6的區域內，係以格子狀設置 有保持基板G之多數個凸部355。 此時，如第1 5圖A、第15圖B所示，可藉由在氣孔 形成區域R上設置凹部3 56，涵蓋其外周以尺寸c的寬度 形成框部3 5 8。因此，基板G係以靜電吸附力保持於基板 保持面，並藉此使基板G以特定的壓力被按壓於框部3 5 8 ，而將He氣體予以密封。 於此框部3 5 8中，可形成如第1 6圖A、第16圖B所 示之基板位置偏離檢測孔3 1 7，並形成用以使基板位置偏 離檢測孔3 1 7連通於凹部3 5 6與基板G之間所形成的空間 之連通路徑3 1 8。此時，如第1 6圖A所示，基板位置偏 離檢測孔3 1 7較理想係例如設置於框部3 5 8的4個角部。200839931 IX. Description of the Invention [Technical Field] The present invention relates to a substrate for holding a substrate for a flat panel display such as a liquid crystal display or an electroluminescence display (Electroluminescence Display) Maintain the mechanism and plasma processing unit. [Prior Art] In the panel manufacturing of a flat panel display (FPD), a device, an electrode, a wiring, or the like in which a pixel is formed on a substrate made of an insulator such as glass is used. Among the various steps in the manufacture of the panel, fine processing such as etching, CVD, ashing, sputtering, etc. is performed by a plasma processing apparatus. The plasma processing apparatus is, for example, placed in a processing container capable of depressurizing, placed on a mounting table having a susceptor constituting a lower electrode, and supplied with high-frequency power to the susceptor to form a process on the substrate The plasma of the gas is subjected to specific processing such as engraving on the substrate by means of the plasma. At this time, it is necessary to suppress the temperature rise due to heat generation during plasma treatment, and to control the temperature of the substrate to be constant. Therefore, a large number of gases (heat transfer gases) having a heat transfer property such as He gas (ammonia gas) are also supplied to the refrigerant passage in the stage after the temperature adjustment of the refrigerant by the cooling device. The method of indirectly cooling the substrate by being placed in the stage and supplied to the inner surface of the substrate. In this cooling method, since the substrate is fixed and held on the mounting table against the supply pressure of the He gas, the substrate holding portion is provided on the mounting table, and the substrate is adsorbed by, for example, electrostatic adsorption force, -4-200839931. And held on the substrate holding surface of the substrate holding portion. When the substrate is displaced from the substrate holding surface on the mounting table, the substrate holding surface is exposed on the susceptor. If high frequency power is applied to the susceptor to generate plasma in this state, abnormal discharge may occur. Damage to the base. Therefore, if the positional deviation of the substrate can be detected before the plasma is generated, it is possible to prevent the occurrence of abnormal discharge. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Problem to be Solved In recent years, the demand for large-sized insulating substrates for FPD has been increasing. Since the substrate for such an FPD is much larger than the semiconductor wafer, it is extremely difficult to accurately place the substrate on the mounting table even when a transport mechanism such as a transfer arm is used. Therefore, in the substrate for FPD, it is necessary to allow a certain degree of positional deviation of the substrate to be allowed within a range in which abnormal discharge does not occur. Regarding the countermeasures against this positional deviation, those known in the art of semiconductor wafers include those described in Patent Documents 1 and 2. These techniques are such that by forming an inclined surface on the annular side or by providing the inclined protrusion on the outer side of the region on which the semiconductor wafer is placed, even if the semiconductor wafer is displaced from position, the end portion is engaged with the inclined surface or The inclined surface of the protrusion can also slide the inclined surface to correct the positional deviation. -5- 200839931 However, in a substrate for FPD which is much larger than a semiconductor wafer, since the weight thereof is much larger than that of the semiconductor wafer, even if the end portion of the substrate for FPD is engaged with the inclined surface of the inclined surface or the protrusion, It is also difficult to cause the inclined surface to slide down and maintain the state of being lifted. Therefore, the probability that the technique cannot correct the positional deviation is extremely high. Further, as in the technique described in Patent Document 3, a pressure measuring hole is provided in an upper portion of the mounting table, and a pressure measuring gas is supplied between the mounting table and the semiconductor wafer via the pressure measuring hole, and the pressure measuring gas is monitored. The method of stress. In this method, for example, when there is no semiconductor wafer or when the electrostatic holding force is small, since the pressure measurement gas leaks from the pressure measuring hole and the pressure is lowered, the pressure can be detected by detecting the pressure on the mounting table. Whether there is a semiconductor wafer and the hold state. However, this method does not detect the positional deviation of the semiconductor wafer. Accordingly, the present invention has been made in view of the above problems, and an object of the invention is to provide a substrate holding mechanism and a plasma processing apparatus which can prevent a certain degree of positional deviation of a substrate to be processed and prevent abnormal discharge. In order to solve the above problems, according to a certain aspect of the present invention, a substrate holding mechanism for placing and holding a rectangular body formed of an insulator in a space where plasma is generated is provided. A substrate holding mechanism for a substrate, comprising: a rectangular mounting table on which the substrate to be processed is placed and held; and a gas flow path for supplying gas to the mounting table and holding the substrate on the mounting table -6 - 200839931 Between the substrates to be processed held by the surface; a plurality of pores formed on the substrate holding surface of the mounting table, and the gas from the gas flow path is guided to the substrate holding surface; and the concave portion is formed to form the gas a region of the hole is formed inside the substrate holding surface, and is formed to cover the entire pore formation region; a frame portion is formed on an outer circumference of the pore formation region of the substrate holding surface; and a plurality of substrate positions are offset from the detection hole, and are formed in a frame portion; a communication path connecting the substrate position deviation detecting hole and the concave portion; a pressure measuring means, measuring The pressure of the gas flow path and the positional deviation detecting means detect the amount of gas leakage from the pores based on the detection pressure from the pressure measuring means when the substrate to be processed is held on the mounting table, and As a result of the detection, it is detected whether or not the positional deviation of the substrate to be processed is greater than or equal to the specific positional deviation allowable amount. According to the invention of this configuration, the heat transfer gas (e.g., He gas) flows through the substrate position deviation detecting hole via the communication path. Therefore, when the substrate to be processed does not have a positional deviation, the substrate positional deviation detecting hole is blocked by the substrate to be processed so that the gas does not leak, whereas the substrate to be processed is exposed to a portion of the substrate holding surface. When the deviation occurs, the amount of leakage of the gas from the position of the substrate deviates from the detection hole, so that the positional deviation can be detected. Thereby, it is possible to allow a certain degree of positional deviation of the substrate to be processed, and it is possible to prevent the occurrence of abnormal discharge due to the positional deviation of the substrate to be processed. In this case, the substrate position is shifted from the detection hole, and is preferably formed at four corner portions of the frame portion. Therefore, it is possible to separate the detection holes by the four substrate positional deviations of 200839931, and not only when the substrate to be processed is displaced in parallel with the substrate to be processed, but when the substrate to be processed is obliquely displaced to the substrate holding surface in the oblique direction, It is also possible to detect the positional deviation of the substrate to be processed. Further, on the lower surface of the concave portion, a plurality of convex portions of the holding substrate may be provided in a region where the concave portion is formed. In order to solve the above problems, according to another aspect of the present invention, a substrate holding mechanism for mounting a substrate to be processed by an insulator in a space for generating plasma is provided, and is characterized in that: Disposing, placing and holding the substrate to be processed; a gas flow path for supplying gas between the mounting table and the substrate to be processed held by the substrate holding surface of the mounting table; and a plurality of air holes formed in the carrier a substrate holding surface that is placed, and the gas from the gas flow path is guided to the substrate holding surface; and the positional deviation detecting protrusion is located at a reference position of the substrate holding surface of the mounting table. The outer side of the substrate to be processed is offset from the specific position and is disposed along the peripheral edge, and is protruded higher than the substrate holding surface of the mounting table. The pressure measuring means measures The pressure of the gas flow path; and the positional deviation detecting means for holding the substrate to be processed on the mounting table The amount of gas leakage from the pores is detected based on the detected pressure from the pressure measuring means, and based on the detection result, whether or not the specific positional deviation tolerance is generated or more is shifted from the position of the substrate to be processed. In order to solve the above problems, according to another aspect of the present invention, there is provided a plasma processing apparatus for placing a processing chamber in a processing chamber by introducing a processing gas into a processing chamber and generating a plasma of the processing gas from -8 to 200839931. A plasma processing apparatus for performing a specific plasma treatment on a substrate to be processed which is placed and held by an insulator is provided with a gas flow path for supplying gas to the mounting table and the carrier Between the substrates to be processed held by the substrate holding surface, a plurality of air holes are formed on the substrate holding surface of the mounting table, and the gas from the gas flow path is guided to the substrate holding surface; position deviation detection When the substrate to be processed is positioned at a reference position of the substrate holding surface of the mounting table, the projection is disposed outside the periphery of the substrate to be processed, and is disposed only along a predetermined distance from a predetermined position and disposed along the periphery. And protruding higher than the substrate holding surface of the mounting table; the pressure measuring means measures the pressure of the gas flow path And the positional deviation detecting means detects the amount of gas leakage from the substrate position deviation detecting hole based on the detection pressure from the pressure measuring means when the substrate to be processed is held on the mounting table, and based on the detection As a result, it is detected whether or not the positional deviation of the substrate to be processed which is more than the above-described specific positional deviation tolerance is generated. According to the present invention, the positional deviation detecting projection is formed by shifting the reference position of the substrate to be processed from the predetermined substrate position by a predetermined amount, thereby causing the positional deviation to occur when the substrate to be processed exceeds the specific position by the allowable amount. At this time, since a part of the substrate to be processed is lifted up to the positional deviation detecting protrusion, the amount of leakage of the gas from the air hole is increased, and thus the positional deviation of the substrate to be processed can be detected. Thereby, since the positional deviation can be detected before the plasma is formed on the substrate to be processed, the positional deviation of the substrate to be processed can be tolerated to some extent, and the deviation of the position of the substrate to be processed -9 - 200839931 can be prevented. Abnormal discharge occurred before it happened. In this case, the positional deviation tolerance is preferably set to a range in which the substrate holding surface of the substrate to be processed is not exposed when the substrate to be processed is held by the mounting table. Thereby, for example, when the substrate is displaced from a large positional deviation from the pore formation region of the heat transfer gas, the amount of leakage of the heat transfer gas from the pores is naturally increased, but even a part of the substrate holding surface is exposed. When the minute position is deviated, the amount of leakage of the heat transfer gas from the air holes is also increased, so that the positional deviation can be detected. Thereby, it is possible to allow a certain degree of positional deviation of the substrate to be processed, and it is possible to prevent the occurrence of abnormal discharge due to the positional deviation of the substrate to be processed. Further, the mounting table includes, for example, a susceptor, a substrate holding portion that is provided on the susceptor and that holds the substrate to be processed on the substrate holding surface, and a periphery that surrounds the susceptor and the substrate holding portion The outer frame portion is disposed, and the positional deviation detecting protrusion is formed, for example, on an upper portion of the outer frame portion. According to this configuration, the positional deviation of the substrate to be processed can be detected with a simple configuration in which the positional deviation detecting projection is formed on the upper portion of the outer frame portion, so that the occurrence of abnormal discharge can be prevented. Further, the size of the substrate holding surface is preferably set to be smaller than the size of the substrate to be processed by a dimension 2a, and when the positional deviation tolerance is the size b, the relationship between the dimensions a and b is a > b. By arranging the positional deviation detecting projections at this position, even if the substrate to be processed is displaced from the reference position, for example, a part of the substrate holding surface is not raised in the position where the substrate to be processed is not lifted up to the positional deviation detecting projection. It is exposed, so the positional deviation can be tolerated. On the other hand, when the substrate to be processed is deviated from the exposure of a portion of the substrate holding surface of the base-10-200839931, the substrate is lifted to the positional deviation detecting protrusion to make the gas from the air hole. The amount of leakage increases, and this position deviation can be detected. Thereby, it is possible to allow a certain degree of positional deviation of the substrate to be processed, and it is possible to prevent the occurrence of abnormal discharge due to the positional deviation of the substrate to be processed. Further, when the height of the upper portion of the outer frame portion is hi, and the height of the upper portion of the positional deviation detecting projection is h2', and the height of the substrate holding surface is h, the relationship between the heights hi, h, and h2 Ideally hl^h <h2. When the positional deviation detecting projection is disposed at this position and lifted to the positional deviation detecting projection on the substrate to be processed, the substrate to be processed can be lifted from the substrate holding surface, so that the leakage of the gas from the air hole can be increased. Further, the positional deviation detecting projection may be formed in a frame shape along the periphery of the substrate to be processed, for example, and the positional deviation detecting projection may be formed in a chess piece shape; and may be provided along the periphery of the substrate to be processed. A plurality of the aforementioned pieces are positioned to deviate from the detecting projections. According to this positional deviation detecting projection, it is only necessary to detect the positional deviation of the substrate to be processed in a very simple configuration in which the positional deviation detecting projection is installed at a necessary position. Further, the positional deviation detecting projection may be provided to be detachable. Thereby, the exchange of the positional deviation detecting projections 33 2 can be easily performed. Further, the configuration can be changed at an appropriate position in accordance with the shape of the substrate or the like, and can be exchanged with those having an appropriate shape. The substrate holding portion may be configured, for example, by sandwiching an electrode plate between the lower dielectric layer and the upper dielectric layer, and by applying an electrostatic adsorption force generated by applying a specific voltage of -11 - 200839931 to the electrode plate. The treatment substrate is adsorbed and held on the substrate holding surface. Advantageous Effects of Invention According to the present invention, it is possible to provide a substrate holding mechanism and a plasma processing apparatus which can prevent a certain degree of positional deviation of a substrate to be processed and prevent abnormal discharge. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and the drawings, constituent elements that have substantially the same function are denoted by the same reference numerals, and the repeated description thereof will be omitted. (Configuration Example of Plasma Processing Apparatus) First, an embodiment in which the present invention is applied to a processing apparatus in the form of a multi-reaction chamber having a plurality of plasma processing apparatuses will be described with reference to the drawings. Fig. 1 is a perspective view showing the appearance of a processing apparatus 100 of the present embodiment. The processing apparatus 100 shown in the figure is provided with three plasma processing apparatuses for performing plasma processing on a substrate for a flat display (substrate FPD) G. The plasma processing apparatus is provided with a processing chamber 200, respectively. In the processing chamber 200, for example, a mounting table on which the FPD substrate G is placed is provided, and a shower head for introducing a processing gas (for example, a process gas) is provided above the mounting table. The mounting table has a pedestal that constitutes the lower electrode, and the shower head that is disposed opposite to this side also functions as the upper electrode -12-200839931. In each of the processing chambers 200, the same processing (e.g., etching treatment, etc.) or different processing (e.g., etching treatment, ashing treatment, etc.) may be performed. A specific configuration example in the processing chamber 200 will be described in detail later. Each of the processing chambers 200 is connected to a side surface of the transfer chamber 110 of a polygonal cross section (for example, a rectangular cross section) with a gate valve 102 interposed therebetween. Further, the carrier chamber 120 is coupled to the transfer chamber 110 by sandwiching the gate valve 104. The substrate loading/unloading mechanism 130 is provided with the gate valve 106 and is disposed adjacent to the carrier chamber 120 in the substrate loading/unloading mechanism 130, and two indexers 140 are provided adjacent to each other. In the indexer 140, a card 142 for accommodating the FPD substrate G is placed. The cassette 1 42 is configured to accommodate a plurality of sheets (for example, 25 sheets) of the FPD substrate G. When the FPD substrate G is subjected to plasma treatment by the plasma processing apparatus, first, the FPD substrate G in the cassette 142 is carried into the carrier chamber 1 120 by the substrate loading/unloading mechanism 130. At this time, if the processed FPD substrate G is present in the carrier chamber 120, the processed FPD substrate G is carried out from the carrier chamber 120 and replaced with the untreated FPD substrate G. Once the FPD substrate G is carried into the carrying chamber 120, the smell valve 1 〇 6 is closed. Next, after depressurizing the inside of the carrying chamber 12 to a specific degree of vacuum, the gate valve 104 between the transfer chamber 110 and the carrying chamber 120 is opened. Thereafter, the FPD substrate G in the load cell 1 20 is carried into the transfer chamber 1 1 by the transport mechanism (not shown) in the transport chamber 1 1 , and then the gate valve 104 is closed. The gate valve 102 between the transfer chamber 1 10 and the processing chamber 200 is opened, and the unprocessed FPD substrate G is carried into the mounting table in the processing chamber 200 by the above-described transport mechanism by -13-200839931. At this time, when the processed FPD substrate G is present, the processed FPD substrate G is carried out and replaced with the unprocessed FPD substrate G. In the processing chamber 200, the processing gas is introduced into the processing chamber through the shower head, and the high-frequency power is supplied to the lower electrode or the upper electrode or both the lower electrode and the upper electrode, and processing is performed between the lower electrode and the upper electrode. The plasma of the gas is used to perform specific plasma treatment on the substrate F for FPD held on the mounting table. (Configuration Example of Processing Room) Next, a specific configuration example of the processing chamber 200 will be described with reference to the drawings. Here, the plasma processing apparatus of the present invention is applied to, for example, a capacitively coupled plasma (hereinafter referred to as "substrate") for an FPD insulating substrate such as a glass substrate (CCP··Capacitively). Coupled Plasma) A configuration example of a processing chamber when etching a device. Fig. 2 is a cross-sectional view showing a schematic configuration of the processing chamber 200. The processing chamber 200 shown in Fig. 2 is provided with a processing container 202 having a substantially angular columnar shape made of, for example, aluminum which has been subjected to anodizing treatment (aluminum oxide treatment). Processing vessel 202 is grounded. A mounting table 300 having a susceptor 310 constituting a lower electrode is disposed at the bottom of the processing container 022. The mounting table 300 has a function of a substrate holding mechanism that fixes and holds the rectangular substrate G, and is formed in a rectangular shape corresponding to the rectangular substrate G. A specific configuration example of this mounting table will be described later. -14 - 200839931 A shower head 210 having a function as an upper electrode is disposed opposite to the mounting surface 3 〇〇 in a direction parallel to the pedestal 310. The shower head 210 is supported by the upper portion of the processing container 202, and has a buffer chamber 222 therein, and a plurality of discharge holes 224 for discharging the processing gas are formed below the susceptor 3 10 . The shower head 210 is grounded and forms a pair of parallel plate electrodes together with the susceptor 310. A gas introduction port 226 is provided on the upper surface of the shower head 210, and a gas guide φ inlet pipe 228 is connected to the gas introduction port 226. The processing gas supply source 234 is connected to the gas introduction pipe 228 via a shut-off valve 230 and a mass flow controller (MFC: Mas sFlow Controller) 232. The process gas from the process gas supply source 234 is controlled to a specific flow rate by a mass flow controller (MFC) 232 and introduced into the buffer chamber 222 of the shower head 210 through the gas inlet port 226. As the processing gas (etching gas), for example, a halogen-based gas, an 02 gas, an Ar gas, or the like, a gas generally used in the field can be used. # On the side wall of the processing chamber 200, a gate valve 102 for opening and closing the substrate carrying-out port 204 is provided. Further, below the side wall of the processing chamber 200, an exhaust port is provided, and an exhaust device 2 09 including a vacuum pump (not shown) is attached to the exhaust port. The exhaust chamber 2 0 9 exhausts the chamber of the processing chamber 200, whereby the plasma processing chamber 200 can be maintained in a specific vacuum environment (for example, i〇mT〇rr = about 1.33 Pa). (Example of the configuration of the mounting table to which the substrate holding mechanism is applied) -15 - 200839931 Here, a specific configuration example of the mounting table 300 to which the substrate holding mechanism of the present invention is applied will be described with reference to Figs. 2 and 3 . Fig. 3 is a view for explaining a configuration example of a heat transfer gas supply mechanism of the mounting table 300. Fig. 3 is a view showing a simplified cross section of the upper portion of the mounting table 3 〇 0 shown in Fig. 2. In the third drawing, the electromagnet holding portion 320 shown in Fig. 2 is omitted for simplification of description. As shown in Fig. 2, the mounting table 300 includes an insulating base member 312 and a rectangular block-shaped base 3 10 formed of a conductor provided on the base member 312. As shown in Fig. 2, the side surface of the susceptor 3 10 is covered with an insulating film 31. An electrostatic holding portion 320 as an example of a substrate holding portion for holding the substrate G on the substrate holding surface is provided on the susceptor 310. The electrostatic holding portion 320 is configured, for example, by sandwiching the electrode plate 322 between the lower dielectric layer and the upper dielectric layer. Further, a rectangular frame shape composed of an insulating member made of ceramic or quartz is disposed so as to surround the outer frame of the mounting table 300 and surround the base member 312, the susceptor 310, and the periphery of the electrostatic holding portion 320. The outer frame portion 3 3 0. The dielectric layer and the upper dielectric layer under the electrostatic holding portion 320 are preferably an insulator having a volume specific resistance χ of 1 χ 1 〇 14 Ω · cm or more, for example, aluminum oxide (Al 2 〇 3 ) and chromium dioxide (ZrO 2 ). At least one of the main components of the ceramic. The electrode plate 322 can be any electrically conductive material, such as tungsten. The lower dielectric layer, the electrode plate 322, and the upper dielectric layer can be laminated on the susceptor 310 by a generally known plasma welding method. The electrode plate 322 of the electrostatic holding portion 320 is electrically connected to the direct current (D C ) power source 3 1 5 via the dielectric switch 316. The switch 3 1 6 switches the DC power source 315 and the ground potential, for example, to the electrode plate 322. Between the electrode plate 322 and the direct current (DC) power source 3 15 5 , it can be arranged to block the local frequency from the side of the base 3 10 0 and prevent the high frequency leakage from the side of the base 3 10 0 to the DC power source 3 1 5th side of the local frequency barrier (not shown in the figure τκ). The local frequency blocking portion is preferably composed of a resistor having a high resistance of 1 Μ Ω or more or a low-pass filter allowing a dc current to pass. If the switch 3 16 is switched to the DC power supply 3 1 5 side, the DC voltage from the DC power source 3 15 is applied to the electrode plate 3 22 . Here, when the voltage of the DC voltage is a positive polarity, negative charges (electrons, negative ions) are attracted to the upper surface of the substrate G and accumulated. Thereby, the electrostatic adsorption force that sandwiches the substrate G and the upper dielectric layer and pulls each other, that is, the Coulomb force, acts between the negative surface charge on the substrate G and the electrode plate 32, thereby electrostatically adsorbing the force. The substrate G is adsorbed and held on the mounting table 300. If the switch 316 is switched to the ground side, the Coulomb force, that is, the electrostatic attraction force, is released. The output terminal of the high-frequency power source 3 1 4 is electrically connected to the pedestal 3 1 0 by a clip-matcher 3 1 2 . The number of output frequencies of the high-frequency power source 3 1 4 is selected from a relatively high number of frequencies, for example, 13.56 MHz. The high-frequency power from the high-frequency power source 314 can also be used for plasma generation and bias voltage. That is, in the plasma processing, the plasma PZ of the processing gas can be generated on the substrate G by the high frequency power from the high frequency power source 314 applied to the susceptor 310, and the ions in the plasma PZ can be pulled. To the top of the substrate G (the surface to be processed). Thereby, a specific plasma etching is performed on the substrate G. -17- 200839931 A refrigerant flow path 340 is provided inside the susceptor 310, and the refrigerant adjusted to a specific temperature flows into the refrigerant flow path 340 from a cooling device (not shown). The temperature of the susceptor 310 can be adjusted to a specific temperature by the refrigerant '. The mounting table 300 is provided with a heat transfer gas supply mechanism that supplies a heat transfer gas (for example, He gas) at a specific pressure between the substrate holding surface of the electrostatic holding portion 306 and the inner surface of the substrate G. The heat transfer gas supply mechanism supplies the heat transfer gas to the inner surface of the substrate G at a specific pressure via the gas flow path 3 5 2 inside the base φ holder 310. The heat transfer gas supply means is specifically configured as shown in Fig. 3, for example. That is, a plurality of air holes 3 54, which are connected to the gas flow path 352, are provided on the upper surface of the susceptor 310 and the electrostatic holding portion 320. As shown in FIG. 15A and FIG. 15B, the pores 345 are arranged at a predetermined interval, and a plurality of pore formation regions R are arranged on the inner side. The pore formation region R is, for example, only the outer circumference of the substrate holding surface. . # Supply the He gas supply source 3 64 of He gas as a heat transfer gas, and connect it to the gas flow path 3 52 by a dielectric pressure regulating valve (PC V : Pressure Control Valve) 3 62 . The pressure regulating valve (PCV) 3 62 adjusts the flow rate so that the pressure of the He gas supplied to the side of the blow hole 3 5 4 becomes a specific pressure. The pressure regulating valve (PCV) 362 is, for example, a fluid pressure gauge (for example, a capacitive fluid pressure gauge (CM)) that measures a pressure measuring means for measuring the pressure of the heat transfer gas flowing through the gas flow path 353. 3 63, and a flow regulating valve (for example, a piezoelectric valve) not shown, a flow meter, and a controller for controlling a piezoelectric valve as a flow regulating valve are integrally formed. Thereafter, the controller controls the piezoelectric valve to control the flow rate of the He gas based on the pressure of the He gas measured by the fluid pressure gauge 3 63 so that the air pressure is constant by, for example, PID control. The pressure regulating valve (PCV) 3 62 and the He gas supply source 3 64 are connected to the control unit 400 of each unit of the control processing device 100, respectively. The control unit 400 controls the He gas supply source 364 to flow the He gas, and adjusts the He gas to a specific flow rate by the pressure regulating valve (PCV) 3 62 and supplies it to the gas flow path 3 52 . Thereby, the He gas system is supplied to the inner surface of the substrate G through the gas flow path 3 52 and the gas holes 3 5 4 at a specific pressure. At this time, the control unit 400 determines the pressure of the gas flow path 353 by the fluid pressure gauge 3 6 3 of the pressure regulating valve (PCV) 362, and based on the measured pressure, for example, the substrate G When electrostatically adsorbed, the amount of shallow leakage of He gas can be monitored. In the above, the pressure regulating valve (PCV) 3 62 formed by the fluid pressure gauge 3 63 and the flow regulating valve integrally formed in the gas flow path 352 is used, but is not limited thereto, and the fluid pressure gauge 3 63 and the flow rate are used. The regulating valve may additionally be provided with a gas flow path 3 52 . Further, the fluid pressure gauge is not limited to a capacitive fluid pressure gauge, and various fluid pressure gauges may be used. The flow regulating valve is not limited to the piezoelectric valve, and may be, for example, a solenoid valve. The amount of shallow leakage of the heat transfer gas (for example, He gas) varies depending on the position at which the substrate is generated. Therefore, the inventors of the present invention have detected whether the substrate can be detected by a change in the amount of leakage of the heat transfer gas. The position is deviated and discussed. However, the substrate for FPD, which is much larger than the semiconductor wafer, still has its own problem. In the substrate G having a very large size as the substrate for the FPD, it is extremely difficult to accurately mount the substrate on the mounting table, even if a semiconductor wafer having a size smaller than that of the FPD substrate is used, even if a transport mechanism such as a transfer arm is used. on. Therefore, in order to allow a certain degree of positional deviation of the substrate G, as shown in FIGS. 4 and 5, the upper surface of the outer frame portion 333 and the mounting surface of the mounting table 301 (the substrate of the electrostatic holding portion are held) The surface is set to have almost the same height so that the upper surface of the outer frame portion 333 does not protrude from the mounting surface of the mounting table 301. In this configuration, as shown in Fig. 4, when the substrate G is displaced from the positional deviation of the formation region R of the gas hole 354 of the He gas, the He gas is formed from the formation region R of the air hole 3 54. The portion that does not have the substrate G leaks, so the amount of leakage of He gas becomes large. Therefore, at this time, the positional deviation of the substrate G is detected by monitoring the amount of leakage of He gas. On the other hand, as shown in FIG. 5, when the substrate G is deviated from a slight position which is not deviated from the formation region R of the gas hole 354 of the He gas, the substrate G is formed on the formation region R of the gas # hole 3 54. However, the amount of leakage of He gas hardly changes, and thus the positional deviation of the substrate G cannot be detected. However, even if the position of the substrate G is deviated to such an extent that it does not deviate from the formation region R of the air hole 3 54 , a part of the base 3 10 (a part of the substrate holding surface) is exposed, and thus, as shown in FIG. 5 When the plasma PZ is formed on the substrate G, abnormal discharge occurs, which may cause damage of the substrate G -20-200839931. Therefore, in the present embodiment, the positional deviation detecting projection is formed from the reference position of the substrate from the reference position of the substrate by a predetermined amount from the reference position of the substrate, whereby the substrate is displaced beyond the specific substrate position. When the positional deviation occurs due to the allowable amount, a part of the substrate is lifted up to the positional deviation detecting protrusion, and the amount of leakage of the heat transfer gas from the air hole is increased, and the positional deviation of the substrate G can be detected. According to this, for example, when the substrate is displaced from a large position deviating from the pore formation region of the heat transfer gas, the amount of leakage of the heat transfer gas from the pores is naturally increased, but even a part of the substrate (substrate) When a slight positional deviation is observed in a part of the holding surface, the amount of leakage of the heat transfer gas from the air hole is also increased, so that the positional deviation can be detected. For example, the control unit 400 can monitor the heat transfer gas from the pressure detected by the fluid pressure gauge 3 63 of the pressure regulating valve (PCV) 3 62 based on the pressure of the heat transfer gas flowing through the gas flow path 352. The amount of leakage can be judged to cause a positional deviation of the substrate G when the amount of leakage exceeds a predetermined setting. In this manner, the control unit 400 is a positional deviation detecting means constituting the substrate G. Thereby, the positional deviation can be detected before the plasma PZ is formed on the substrate G, so that the occurrence of abnormal discharge due to the positional deviation of the substrate G can be prevented. Next, a configuration example of the positional deviation detecting protrusion of the present embodiment will be described with reference to the drawings. Fig. 3 is a view showing a configuration example in which the step portion is formed on the upper portion of the outer frame portion 390 and the step portion is displaced from the detecting projection 3 3 2 . An example of the arrangement of the positional deviation detecting projections 3 3 2 will be described with reference to Fig. 3 as an example. As shown in Fig. 3, the size of the substrate G is LG, and the substrate holding surface of the mounting table -21 - 200839931 300, that is, the substrate holding surface of the electrostatic holding portion 320 has a size Ls. The size here is the length of either one of the rectangular shapes of the substrate G or the like. At this time, the size Ls of the substrate holding surface is set to be smaller than the size 2a of the size LG of the substrate G. In other words, when the substrate holding surface is aligned with the center of the substrate G and the position of the substrate G parallel to each side of the substrate G and the substrate holding surface is the reference position, the substrate G is positioned when the substrate G is at the reference position. The peripheral end portion covers the entire circumference and protrudes only from the substrate holding surface by the size 2a. Further, when the positional deviation detecting protrusion 3 3 2 is formed at a position where the peripheral edge of the substrate G is at the position b only when the substrate G is located at the reference position, the relationship between the above-described respective dimensions a and b is preferably a > b . By arranging the positional deviation detecting projections 332 at this position, as shown in FIG. 6, even if the substrate G is displaced from the reference position, the substrate G is not lifted up to the positional deviation detecting projection 3323. A part of the susceptor 310 (a part of the substrate holding surface) is also not exposed. The dimension b is a positional deviation allowable amount, and the range from the periphery of the substrate G to the dimension b is a range in which a part of the susceptor 310 (a part of the substrate holding surface) is not exposed, and in this range, Since an abnormal discharge occurs, it is a range in which the position of the substrate G can be allowed to deviate. On the other hand, as shown in FIG. 7, when the substrate G is displaced from a position where a part of the susceptor 3 10 (a part of the substrate holding surface) is exposed, the substrate G is lifted up to the positional deviation detecting projection 3 3 2, the leakage amount of He gas from the air holes 3 54 is increased, and the deviation of the position -22-200839931 can be detected. Thereby, it is possible to allow a certain degree of positional deviation of the substrate G, and it is possible to prevent the occurrence of abnormal discharge due to the positional deviation of the substrate G from occurring. In addition, the height of the upper portion of the outer frame portion 330 (the portion lower than the inner side of the positional deviation detecting projection 3 3 2) is h 1, and the height of the upper portion of the positional deviation detecting projection 3 3 2 is h2. When the height of the substrate holding surface is h, the relationship between the heights h 1 , h and h2 is preferably h 1 $ h < h2. By arranging the positional deviation detecting projections 3 3 2 at this position and lifting the substrate G to the positional deviation detecting projections 3 32, the substrate G can be lifted from the substrate holding surface, so that the He gas can be increased from the air holes. The amount of leakage. Further, in a simple configuration in which the positional deviation detecting projections 332 are formed outside the outer frame portion 330, the positional deviation of the substrate G can be detected, so that abnormal discharge due to the positional deviation of the substrate G can be prevented. Produced in the first place. This positional deviation detecting projection 3 3 2 is formed along the outer peripheral edge of the substrate G when the substrate G is positioned at the reference position of the substrate holding surface. As shown in Fig. 8, the positional deviation detecting projection 3 3 2 is attached to the outer frame portion 330, and the substrate G from the reference position of the substrate holding surface indicated by the broken line corresponds to only the positional deviation tolerance. The position of the dimension b is formed to cover the entire circumference of the outer frame portion 330. The outer frame portion 3 3 0 does not necessarily have to be integrally formed, and may be constituted by a divided structure in which a plurality of frame members are combined. Further, the positional deviation detecting projections 332 may be integrally formed or divided into a divided structure. Further, as shown in Fig. 9, the positional deviation detecting protrusions 3 3 2 formed in a chess piece shape may be arranged along the outer circumference of the substrate G. In the case of -23-200839931, for example, one is arranged along the shorter side of the substrate G, and two are arranged at equal intervals along the longer side. However, the number of positional deviation detecting projections 3 3 2 is not limited thereto. For example, two or more positional deviation detecting protrusions 3 3 2 may be provided along each side of the substrate G, and the positional deviation detecting protrusions 332 provided on the respective sides of the substrate G may be set to the same number. Or a different number. The positional deviation detecting projection 3 3 2 can be configured to be integrally formed with the outer frame portion 3 3 on the outer frame portion 3 3 0 as shown in FIG. 10, or as shown in FIG. 11 and As shown in Fig. 12, the outer frame portion 330 is different from the outer frame portion and is detachably constructed. In the first aspect, the screw portion is provided on the lower side of the positional deviation detecting projection 3 3 2 and is screwed and fixed to the outer frame portion 3 3 0 . In addition, FIG. 2 is an example in which a screw hole is provided in the positional deviation detecting projection 3 3 2 and a screw is screwed and fixed by the screw hole. In this manner, the detection projections 3 3 2 are detachably provided to the outer frame portion 3 3 0, and the positional deviation detecting projections 3 3 2 can be easily exchanged. Further, the configuration can be changed at an appropriate position in accordance with the shape or the like of the substrate G, and can be exchanged with a person having an appropriate shape. Further, as shown in FIG. 3, when the substrate G is placed at the reference position of the substrate holding surface, the positional deviation detecting projections 3 3 2 are formed in a frame shape along the outer circumference of the substrate G, or may be formed as a frame. As shown in Fig. 14, the L-shaped positional deviation detecting projections 3 3 2 are fixed to the four corners by screws or the like. When the position of the chess piece is shifted from the detecting projection 332, the positional deviation of the substrate G can be detected with a simple configuration in which the screw is attached to the upper portion of the outer frame portion. Further, the outer frame portion 3 30 does not necessarily need to be integrally formed as -24 - 200839931, and may be constituted by a divided structure in which a plurality of frame members are combined. Further, the positional deviation detecting projection 332 shown in Fig. 13 may be integrally formed or divided into a divided structure. The configuration of the substrate holding surface of the mounting table 300 is not limited to that shown in Fig. 3. As shown in Fig. 15A and Fig. 15B, an extremely shallow concave portion 356 may be provided on the substrate holding surface, including the formation region R of the air hole 3 54. By forming the space between the pore formation region R and the substrate G by the concave portion 365, the He gas ejected from each of the pores 3 54 enters the space formed by the concave portion 356, thereby The He gas performs a more uniform temperature adjustment on the in-plane of the substrate G. Further, on the lower surface of the concave portion 356, a plurality of convex portions 355 for holding the substrate G are provided in a lattice shape in a region where the concave portion 356 is formed. At this time, as shown in Figs. 15A and 15B, the concave portion 356 is provided in the pore formation region R, and the frame portion 358 is formed by the width of the outer circumference of the outer circumference. Therefore, the substrate G is held on the substrate holding surface by the electrostatic adsorption force, and thereby the substrate G is pressed against the frame portion 358 with a specific pressure to seal the He gas. In the frame portion 358, a substrate positional deviation detecting hole 3117 as shown in FIGS. 16A and 16B can be formed and formed to make the substrate position deviate from the detecting hole 31 17 to communicate with the concave portion. 3 5 6 The communication path 3 1 8 between the space formed with the substrate G. At this time, as shown in Fig. 16A, the substrate position deviation detecting holes 31 17 are preferably provided, for example, at the four corner portions of the frame portion 358.
He氣體係經由連通路徑3 1 8而流通於此基板位置偏 離檢測孔3 1 7。因此，如第16圖A所示，於基板G未產 -25- 200839931 生位置偏離時，基板位置偏離檢測孔3 1 7係由基板G所阻 塞而使He氣體不會洩漏，相對於此，如第17圖、第18 圖所示，於基板G產生使基座310上的一部分（基板保持 面的一部分）暴露出之位置偏離時，由於He氣體從基板 位置偏離檢測孔3 1 7之洩漏量增大，因此可檢測出此位置 偏離。藉此，可容許某種程度之基板G的位置偏離，且可 防止因基板G的位置偏離所造成之異常放電的產生於未然 〇 此外，由於將基板位置偏離檢測孔3 1 7設置於框部 3 5 8的4個角部，因此，能夠僅藉由此4個基板位置偏離 檢測孔3 1 7，不僅於第1 7圖所示之基板平行地對基板保持 面產生位置偏離時，於第1 8圖所示之基板斜向地對基板 保持面產生位置偏離時，亦可檢測出基板G的位置偏離。 如上述般，於形成如第16圖A、第16圖B所示之基 板位置偏離檢測孔3 1 7時，可藉由基板位置偏離檢測孔 3 17檢測出基板G的位置偏離，因此並不一定須設置第3 圖所示之位置偏離檢測用突起332。具體而言，可於第4 圖所示之載置台30 1的基板保持面，形成如第16圖A、 第1 6圖B所示之基板位置偏離檢測孔3 1 7。 以上係參照附加圖式，說明本發明之較佳的實施型態 ，但本發明當然不限定於此例。對就業者而言所能夠明瞭 的是，於申請專利範圍所記載之範疇內，可思考出各種變 更例或是修正例，並且這些例子均屬於本發明之技術性範 圍0 -26- 200839931 例如，於上述實施型態中，係以電容耦合電漿（CCP :Capacitively Coupled Plasma)處理裝置作爲可適用本 發明之電漿處理裝置而進行說明，但並不限定於此，亦可 將本發明適用於可在低壓下產生高密度的電漿之感應耦合 電漿（ICP : Inductively Coupled Plasma)處理裝置。 此外，亦可將本發明適用於其他電漿處理裝置，例如 爲，使用螺旋波電漿產生方式、ECR( Electron Cyclotron Resonance :電子迴旋共振）電漿產生方式作爲電漿產生 方式之電漿處理裝置。 產業上之可利用性： 本發明可適用於基板保持機構及電漿處理裝置。 【圖式簡單說明】 第1圖係顯示本發明的實施型態之處理裝置之外觀立 體圖。 第2圖係顯7TC構成同實施型態的電漿處理裝置之處理 室之剖面圖。 第3圖係用以說明載置台之傳熱氣體供應機構的構成 例之圖式。 第4圖係用以說明以往的載置台的作用之圖式，爲基 板產生從氣孔形成區域R偏離般之較大的位置偏離之情況 〇 第5圖係用以說明以往的載置台的作用之圖式，爲基 -27- 200839931 板產生未從氣孔形成區域R偏離般之微小的位置偏離之情 況。 第6圖係用以說明同實施型態之載置台的作用之圖式 ，爲可容許基板的位置偏離之情況。 第7圖係用以說明以往的載置台的作用之圖式，爲不 可容許基板的位置偏離之情況。 第8圖係用以說明同實施型態之位置偏離檢測用突起 的構成例之立體圖。 第9圖係用以說明同實施型態之位置偏離檢測用突起 的其他構成例之立體圖。 第1 〇圖係用以說明第9圖所示之位置偏離檢測用突 起的具體例之剖面圖。 第1 1圖係用以說明第9圖所示之位置偏離檢測用突 起的變形例之剖面圖。 第1 2圖係用以說明第9圖所示之位置偏離檢測用突 起的其他變形例之剖面圖。 第1 3圖係用以說明同實施型態之位置偏離檢測用突 起的其他構成例之立體圖。 第1 4圖係用以說明同實施型態之位置偏離檢測用突 起的其他構成例之立體圖。 第15圖A係用以說明同實施型態的載置台之基板保 持面的其他構成例之圖式，爲從上方觀看載置台時之俯視 圖。 第15圖B係顯示第15圖A之P1-P1’剖面圖。 -28· 200839931 第16圖A係用以說明同實施型態的載置台之基板保 持面的其他構成例之圖式，爲從上方觀看載置台時之俯視 圖。 第16圖B係顯不第16圖A之P2-P2’剖面圖。 第1 7圖係顯示基板平行地對第1 6圖A所示之載置台 的基板保持面產生位置偏離時之圖式。 第1 8圖係顯示基板斜向地對第1 6圖A所示之載置台 的基板保持面產生位置偏離時之圖式。 【主要元件符號說明】 1〇〇 :處理裝置 102、 104、 106 ：閘閥 1 1 〇 :搬運室 1 20 :承載室 130 :基板搬出入機構 140 :索引器 142 :卡匣 200 :處理室 202 :處理容器 2〇4 :基板搬出入口 2 〇 8 :排氣管 209 :排氣裝置 2 1 〇 :蓮蓬頭 222 :緩衝室 -29- 200839931 2 2 4 :吐出孔 2 2 6 :氣體導入口 228 :氣體導入管 230 :開閉閥 232 :質量流量控制器（MFC : Mass Flow Controller) 2 3 4 :處理氣體供應源 3 〇 0 :載置台 3 02 :底座構件 3 1 0 :基座 3 1 1 :絕緣覆膜 3 1 2 :匹配器 3 1 4 :高頻電源 3 1 5 : D C電源 3 1 6 :開關 3 1 7 :基板位置偏離檢測孔 3 1 8 :連通路徑 320 :靜電保持部 322 :電極板 3 3 0 :外框部 3 32 :位置偏離檢測用突起 3 3 3 :外框部 340 :冷媒流路 3 52 :氣體流路 354 :氣孔 -30- 200839931 .3 5 6 :凹部 3 5 8 :框部 362 :壓力調整閥（PCV : Pressure Control Valve) 363 :流體壓力計（Manometer) 3 64 :氣體供應源 4 0 0 :控制部 G :基板The He gas system flows through the substrate position deviation detecting hole 3 17 via the communication path 3 1 8 . Therefore, as shown in FIG. 16A, when the substrate G is not produced at a position of -25-200839931, the substrate position deviation detecting hole 31 is blocked by the substrate G so that He gas does not leak. As shown in FIGS. 17 and 18, when the substrate G is displaced from a position where a part of the susceptor 310 (a part of the substrate holding surface) is exposed, the He gas leaks from the substrate position away from the detecting hole 31 7 . The amount is increased, so this position deviation can be detected. Thereby, it is possible to allow a certain degree of positional deviation of the substrate G, and it is possible to prevent the occurrence of abnormal discharge due to the positional deviation of the substrate G. Further, since the substrate position is displaced from the detection hole 3 1 7 to the frame portion Since the four corner portions of the 3 5 8 are offset from the detection hole 3 1 7 by only the four substrate positions, not only when the substrate shown in FIG. 7 is displaced in parallel with the substrate holding surface, When the substrate shown in FIG. 8 is obliquely displaced from the substrate holding surface, the positional deviation of the substrate G can be detected. As described above, when the substrate positional deviation detecting hole 31 17 shown in FIGS. 16A and 16B is formed, the positional deviation of the substrate G can be detected by the substrate positional deviation detecting hole 317, and thus It is necessary to set the positional deviation detecting projection 332 shown in Fig. 3 . Specifically, the substrate positional deviation detecting hole 31 17 shown in FIG. 16 and FIG. 16B can be formed on the substrate holding surface of the mounting table 30 1 shown in FIG. 4 . The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is of course not limited to the examples. It will be apparent to those skilled in the art that various modifications and alterations can be made within the scope of the scope of the patent application, and such examples are within the technical scope of the present invention. 0-26-200839931 For example, In the above embodiment, a CCP (Capacitively Coupled Plasma) processing apparatus is used as the plasma processing apparatus to which the present invention is applicable, but the invention is not limited thereto, and the present invention may be applied to A high-density plasma inductively coupled plasma (ICP: Inductively Coupled Plasma) processing device can be produced at a low pressure. In addition, the present invention can also be applied to other plasma processing apparatuses, for example, a plasma processing apparatus using a spiral wave plasma generation method or an ECR (Electron Cyclotron Resonance) plasma generation method as a plasma generation method. . Industrial Applicability: The present invention is applicable to a substrate holding mechanism and a plasma processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the appearance of a processing apparatus according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a processing chamber of a plasma processing apparatus of the same embodiment. Fig. 3 is a view for explaining a configuration example of a heat transfer gas supply mechanism of a mounting table. Fig. 4 is a view for explaining the action of the conventional stage, and the substrate is displaced from the pore formation region R by a large position. Fig. 5 is a view for explaining the action of the conventional stage. The pattern is a case where the substrate -27-200839931 is not deviated from the pore-forming region R by a minute position. Fig. 6 is a view for explaining the action of the mounting table of the embodiment, in which the position of the substrate can be allowed to deviate. Fig. 7 is a view for explaining the action of the conventional mounting table, in which the position of the substrate is not allowed to deviate. Fig. 8 is a perspective view for explaining a configuration example of the projection for detecting the positional deviation in the same embodiment. Fig. 9 is a perspective view for explaining another configuration example of the projection for detecting the positional deviation in the same embodiment. Fig. 1 is a cross-sectional view showing a specific example of the positional deviation detecting projection shown in Fig. 9. Fig. 1 is a cross-sectional view for explaining a modification of the positional deviation detecting projection shown in Fig. 9. Fig. 1 is a cross-sectional view for explaining another modification of the positional deviation detecting projection shown in Fig. 9. Fig. 3 is a perspective view for explaining another configuration example of the positional deviation detecting projection of the same embodiment. Fig. 14 is a perspective view for explaining another configuration example of the positional deviation detecting projection of the same embodiment. Fig. 15 is a plan view showing another configuration example of the substrate holding surface of the mounting table of the embodiment, and is a plan view when the mounting table is viewed from above. Fig. 15B is a cross-sectional view showing the P1-P1' of Fig. 15A. -28. 200839931 Fig. 16A is a plan view for explaining another configuration example of the substrate holding surface of the mounting table of the embodiment, and is a plan view when the mounting table is viewed from above. Fig. 16B is a cross-sectional view showing the P2-P2' of Fig. 16A. Fig. 17 is a view showing a state in which the substrate is displaced in parallel with respect to the substrate holding surface of the mounting table shown in Fig. 6A. Fig. 18 is a view showing a state in which the substrate is obliquely displaced from the substrate holding surface of the mounting table shown in Fig. 6A. [Description of main component symbols] 1〇〇: Processing devices 102, 104, 106: Gate valve 1 1 〇: Transfer chamber 1 20: Carrier chamber 130: Substrate carry-in mechanism 140: Indexer 142: Cartridge 200: Process chamber 202: Processing container 2〇4: substrate carry-in/out port 2 〇8: exhaust pipe 209: exhaust device 2 1 〇: shower head 222: buffer chamber -29- 200839931 2 2 4: discharge hole 2 2 6 : gas introduction port 228: gas Inlet pipe 230 : On-off valve 232 : Mass flow controller (MFC : Mass Flow Controller) 2 3 4 : Process gas supply source 3 〇 0 : Mounting table 3 02 : Base member 3 1 0 : Base 3 1 1 : Insulation Membrane 3 1 2 : Matching device 3 1 4 : High-frequency power source 3 1 5 : DC power source 3 1 6 : Switch 3 1 7 : Substrate position deviation detecting hole 3 1 8 : Communication path 320 : Electrostatic holding portion 322 : Electrode plate 3 3 0 : outer frame portion 3 32 : positional deviation detecting projection 3 3 3 : outer frame portion 340 : refrigerant flow path 3 52 : gas flow path 354 : air hole -30 - 200839931 .3 5 6 : recessed portion 3 5 8 : frame Part 362: Pressure regulating valve (PCV: Pressure Control Valve) 363 : Fluid pressure gauge (Manometer) 3 64 : Gas supply source 4 0 0 : Control part G: Board
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