KR20140086836A - Plasma processing container and plasma processing apparatus - Google Patents

Abstract

The purpose of the present invention is to suppress deformation of a cover member caused by heat in a plasma processing apparatus including an inductively coupled plasma processing apparatus. An O-ring (51), an insulating member (52), and a spiral shield (53) are provided across the whole circumference of an interfacing portion between a body container (2A) and an upper container (2B) of an inductively coupled plasma processing apparatus (1). The insulating member (52) is inserted into an insulating member groove (62). The insulating member (52) is formed with a plurality of lid-shaped insulating sheets (54). Between the body container (2A) and the upper container (2B), a crevice (CL) is provided by the insulating member (52). By the insulating member (52), the body container (2A) and the upper container (2B) are thermally separated from each other and deformation can be absorbed even if the upper container (2B) is deformed by heat.

Description

[0001] Plasma processing vessel and plasma processing apparatus [0002]

The present invention relates to a plasma processing apparatus for performing plasma processing on an object to be processed and a plasma processing container used for the plasma processing apparatus.

In the FPD (flat panel display) manufacturing process, various plasma treatments such as plasma etching, plasma ashing, and plasma film formation are performed on the FPD substrate. As such a plasma processing apparatus, for example, a parallel plate type plasma processing apparatus and an inductively coupled plasma (ICP) processing apparatus are known. These plasma processing apparatuses are configured as vacuum apparatuses for performing processing by reducing the pressure in the processing vessel to a vacuum state. Further, in recent years, processing containers have also become larger in order to process large FPD substrates.

For example, an inductively coupled plasma processing apparatus includes a processing vessel kept air-tight and subjected to plasma processing on a substrate, and a high-frequency antenna disposed outside the processing vessel. The processing container has a main container, a dielectric wall constituting a ceiling portion of the process chamber, and a frame-shaped lid member for supporting the dielectric wall. In the inductively-coupled plasma processing apparatus, an induction field is formed in the processing container by a high-frequency antenna, and the processing gas introduced into the processing container is converted into plasma by the induction field. Using this plasma, A predetermined plasma process is performed on the substrate.

In the plasma processing apparatus, the temperature in the processing vessel rises due to generation of plasma or a process at a high temperature. And, for example, in the inductively coupled plasma processing apparatus having the above-described structure, the main body container constituting the processing container and the lid member supporting the dielectric wall are heated. When the lid member is excessively heated, warpage occurs in the lid member, and a gap is formed at the joint portion with the main container. As a result, there is a possibility that vacuum leakage from the inside of the treatment chamber occurs, or the dielectric wall supported by the lid member is broken. Further, as the size of the processing container is increased, the problem of warpage also becomes serious.

Regarding the temperature control of the constituent members in the plasma processing apparatus, for example, in Patent Document 1, it has been proposed to provide a heat insulating member on the joint surface of the head body and the head lid in a shower head that emits gas. Patent Document 1 aims at suppressing thermal conduction between the head body and the head cover by the heat insulating member and managing the temperature of the gas jetting portion of the shower head.

With regard to the seal structure of the joint portion of the lid member and the main body container in the inductively coupled plasma processing apparatus, in Patent Document 2, in order to prevent deterioration of the O-ring, And an O-ring is provided on the outer side thereof.

Patent Document 3 discloses a microwave plasma processing apparatus using a planar antenna system in which an O-ring is provided between a microwave transmitting plate and a pressing member for fixing, and a spiral shield is provided outside the O-ring.

(Prior art document)

(Patent Literature)

(Patent Document 1) Japanese Unexamined Patent Application Publication No. 2002-155364 (Fig. 2, etc.)

(Patent Document 2) JP-A-2005-63986 (Fig. 1, etc.)

(Patent Document 3) Japanese Patent Application Laid-Open No. 2007-294924 (Fig. 3, etc.)

As described above, in the plasma processing apparatus, when a part of the processing vessel such as a lid member is deformed due to the heat of the plasma or the process at a high temperature, vacuum leakage or breakage of components occurs, It becomes difficult.

An object of the present invention is to suppress deformation of a processing container due to heat in a plasma processing apparatus including an inductively coupled plasma processing apparatus.

A plasma processing container of the present invention is a plasma processing container for forming a process chamber for performing a plasma process on an object to be processed. This plasma processing container is provided with a main body container and an upper container coupled to the main container, and a vacuum seal member, a heat insulating member, and an electromagnetic wave shielding member functioning as a conductive member are provided between the main container and the upper container. And the main container and the upper container are separated from each other.

In the plasma processing container of the present invention, the heat insulating member may include a plurality of divided heat insulating sheets.

The plasma processing container of the present invention may be disposed in the order of the vacuum chamber member, the electromagnetic wave shielding member, and the heat insulating member from the inside to the outside of the treatment chamber, or may be arranged outwardly from the inside of the treatment chamber , The vacuum chamber member, the heat insulating member, and the electromagnetic wave shielding member in this order.

In the plasma processing container of the present invention, the heat insulating sheet may be made of a synthetic resin having a glass transition temperature (Tg) of more than 125 캜. In this case, the thermal conductivity in the thickness direction of the heat insulating sheet may be 1 W / mK or less. The synthetic resin may be at least one selected from the group consisting of polyetheretherketone (PEEK) resin, polyethylene sulfide (PPS) resin, wholly aromatic polyimide resin, polyetherimide (PEI) and MC nylon. Further, in the plasma processing container of the present invention, the thickness of the heat insulating sheet which is a synthetic resin may be within a range of 0.5 mm or more and 20 mm or less.

In the plasma processing vessel of the present invention, the heat insulating sheet may be made of ceramics. In this case, the thermal conductivity in the thickness direction of the heat insulating sheet may be 40 W / mK or less. The thickness of the heat insulating sheet as a ceramic may be within a range of 5 mm to 20 mm.

Further, in the plasma processing container of the present invention, the gap between the main container and the upper container may be 0.1 mm or more and 2 mm or less, by the heat insulating sheet.

Further, in the plasma processing container of the present invention, the heat insulating sheet may be disposed in the concave portion provided in the main body container.

Further, in the plasma processing container of the present invention, the interval between adjacent heat insulating sheets may be within a range of 1 mm or more and 3 mm or less.

In the plasma processing container of the present invention, the main container and the upper container may each include a temperature regulating device.

The plasma processing apparatus of the present invention comprises the plasma processing vessel described in any one of the above.

A plasma processing apparatus according to the present invention is a plasma processing apparatus comprising: a mounting table provided in the plasma processing container, on which a workpiece is mounted; an antenna provided outside the processing vessel to form an induction field in the processing vessel; A high frequency power source for applying an RF electric power to the antenna to form an induction field; a processing gas supply means for supplying a processing gas into the processing vessel; Or an inductively coupled plasma processing apparatus having an exhaust means for bringing the plasma processing apparatus into a state of being in an inoperative state.

According to the present invention, by disposing the heat insulating member between the main container and the upper container to separate the main container and the upper container, the main container and the upper container can be reliably thermally separated. Therefore, it is possible to control the temperature of the main container and the temperature of the upper container, respectively, and to prevent the upper container from being deformed by heat.

1 is a cross-sectional view schematically showing a configuration of an inductively coupled plasma processing apparatus according to a first embodiment of the present invention.
2 is a cross-sectional view showing an enlarged view of a portion A in Fig.
3 is an enlarged plan view showing a main portion of a top surface of a side portion of the main body container.
4 is a cross-sectional view schematically showing a configuration of an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.
Fig. 5 is a cross-sectional view schematically showing a configuration of an inductively coupled plasma processing apparatus according to a third embodiment of the present invention.

Hereinafter, an inductively coupled plasma processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.

[First embodiment] Fig.

1 is a cross-sectional view schematically showing a configuration of an inductively coupled plasma processing apparatus according to a first embodiment of the present invention. In the following, an inductively coupled plasma processing apparatus is taken as an example, but the present invention can be similarly applied to any plasma processing apparatus.

The inductively coupled plasma processing apparatus 1 shown in Fig. 1 performs plasma processing on, for example, a glass substrate S (hereinafter simply referred to as " substrate ") for FPD. Examples of the FPD include a liquid crystal display (LCD), an electro luminescence (EL) display, and a plasma display panel (PDP).

The inductively coupled plasma processing apparatus 1 includes a processing container 2 having a main container 2A and an upper container 2B.

<Body container>

The main container 2A is a prismatic container having a bottom portion 2b and four side portions 2c. The main container 2A may be a cylindrical container. As the material of the main container 2A, for example, a conductive material such as aluminum or an aluminum alloy is used. When aluminum is used as the material of the main container 2A, the inner wall surface of the main container 2A is subjected to an alumite treatment (anodic oxidation treatment) so that no contaminants are generated from the inner wall surface of the main container 2A. Further, the main container 2A is grounded.

<Top container>

The upper vessel 2B includes a ceiling portion 2a and a dielectric wall 6 disposed above the main vessel 2A for partitioning the space in the processing vessel 2 into two upper and lower spaces, 6, which is provided with a lid member 7 and a support beam 16. [ An antenna chamber 4 is formed in the upper vessel 2B and a treatment chamber 5 is formed in the main vessel 2A. These two chambers are partitioned by the dielectric wall 6. [ That is, the antenna chamber 4 is formed in the space above the dielectric wall 6 in the processing vessel 2, and the processing chamber 5 is formed in the lower part of the dielectric wall 6 in the processing vessel 2 Is formed in the space. Therefore, the dielectric wall 6 constitutes the bottom portion of the antenna chamber 4, and constitutes the ceiling portion of the processing chamber 5. The treatment chamber 5 is kept airtight, and the substrate S is subjected to plasma treatment there.

The dielectric wall 6 has a substantially rectangular or substantially rectangular upper and lower surfaces and a substantially rectangular parallelepiped having four sides. The thickness of the dielectric wall 6 is, for example, 30 mm. The dielectric wall 6 is formed of a dielectric material. As the material of the dielectric wall 6, for example, ceramics such as Al ₂ O ₃ or quartz is used. As an example, the dielectric wall 6 is divided into four parts. That is, the dielectric wall 6 has a first partial wall, a second partial wall, a third partial wall, and a fourth partial wall. In addition, the dielectric wall 6 may not be divided, and may be divided into portions other than four.

The lid member 7 is provided under the upper container 2B. The lid member 7 is positioned and arranged at the upper end of the main container 2A. The lid member 7 is disposed on the main container 2A so that the process container 2 is closed and the process container 2 is opened by separating from the main container 2A. The lid member 7 may be integrated with the upper container 2B.

The support beams 16 are, for example, in the shape of a cross, and the four partial walls of the dielectric wall 6 are supported by the lid member 7 and the support beams 16.

The inductively coupled plasma processing apparatus 1 further includes a plurality of columnar suspenders 8 each having an upper end connected to the ceiling portion 2a of the upper container 2B. Although Fig. 1 shows three suspenders 8, the number of suspenders 8 is arbitrary. The support beam 16 is connected to the lower end of the suspender 8. Thus, the support beam 16 is suspended from the ceiling portion 2a of the upper container 2B by the plurality of suspenders 8, and is held at the substantially central position in the vertical direction inside the processing vessel 2 In the horizontal direction.

The support beam 16 is provided with a gas flow path (not shown) through which the process gas is supplied from the gas supply device 20 and a plurality of openings (not shown) for discharging the process gas supplied to the gas flow path. As the material of the support beam 16, a conductive material is used. As this conductive material, it is preferable to use a metal material such as aluminum. When aluminum is used as the material of the support beams 16, alumite treatment (anodic oxidation treatment) is applied to the inner and outer surfaces of the support beams 16 so that no contaminants are generated from the surface.

<Gas supply device>

Further, a gas supply device 20 is provided outside the main container 2A. The gas supply device 20 is connected to a gas flow path (not shown) of the support beam 16 via, for example, a gas supply pipe 21 inserted in the hollow portion of the center suspender 8. The gas supply device 20 is for supplying a process gas used for the plasma process. When the plasma process is performed, the process gas is supplied into the process chamber 5 through the gas supply pipe 21, the gas flow path in the support beam 16, and the opening. As the process gas, for example, SF ₆ gas is used.

<First High-frequency Supply Unit>

The inductively coupled plasma processing apparatus 1 further includes a high frequency antenna (hereinafter simply referred to as &quot; antenna &quot;) disposed in the interior of the antenna chamber 4, (13). The antenna 13 has, for example, a substantially square square-shaped spiral shape. The antenna 13 is disposed on the upper surface of the dielectric wall 6.

A matching device 14 and a high frequency power source 15 are provided outside the processing vessel 2. One end of the antenna 13 is connected to the high frequency power source 15 via the matching device 14. The other end of the antenna 13 is connected to the inner wall of the upper container 2B and is grounded via the main container 2A. When plasma processing is performed on the substrate S, high frequency electric power (for example, high frequency electric power of 13.56 MHz) for induction electric field formation is supplied from the high frequency electric power source 15 to the antenna 13. As a result, an induced electric field is formed in the treatment chamber 5 by the antenna 13. This induction field converts the process gas into a plasma.

<Mount>

The inductively coupled plasma processing apparatus 1 further includes a susceptor (mount table) 22 for mounting the substrate S, an insulator frame 24, a strut 25, a bellows 26, And a valve 27 are provided. The pillars 25 are connected to a lifting device (not shown) provided below the main container 2A and protrude into the process chamber 5 through openings formed in the bottom portion 2b of the main container 2A. The column 25 has a hollow portion. The insulator frame (24) is provided on the support (25). The insulator frame 24 has a box-like shape with an open top. At the bottom of the insulator frame 24, an opening is formed which leads to the hollow portion of the support 25. The bellows 26 surrounds the strut 25 and is hermetically connected to the insulator frame 24 and the inner wall of the bottom portion 2b of the main container 2A. Thus, the airtightness of the treatment chamber 5 is maintained.

The susceptor 22 is accommodated in the insulator frame 24. The susceptor 22 has a mounting surface 22A for mounting the substrate S thereon. As the material of the susceptor 22, for example, a conductive material such as aluminum is used. When aluminum is used as the material of the susceptor 22, an alumite treatment (anodic oxidation treatment) is performed on the surface of the susceptor 22 so that no contaminants are generated from the surface.

<Second High-frequency Supply Unit>

A matching device 28 and a high frequency power source 29 are also provided outside the processing vessel 2. The susceptor 22 is connected to the matching unit 28 through an opening of the insulator frame 24 and a current-carrying rod inserted in the hollow portion of the strut 25, (Not shown). When a plasma process is performed on the substrate S, high frequency power for bias (for example, high frequency power of 380 kHz) is supplied from the high frequency power source 29 to the susceptor 22. This high frequency power is used to effectively attract ions in the plasma to the substrate S mounted on the susceptor 22.

<Gate valve>

The gate valve 27 is provided on the wall of the side portion 2c of the main container 2A. The gate valve 27 has an opening and closing function and maintains the airtightness of the processing chamber 5 in the closed state and enables transfer of the substrate S between the processing chamber 5 and the outside in an open state.

<Exhaust system>

An exhaust device 30 is also provided outside the processing vessel 2. The exhaust device 30 is connected to the process chamber 5 via an exhaust pipe 31 connected to the bottom portion 2b of the main container 2A. When the plasma processing is performed on the substrate S, the exhaust apparatus 30 exhausts the air in the processing chamber 5 and keeps the inside of the processing chamber 5 in a vacuum or a reduced-pressure atmosphere.

<Temperature control device>

A heating medium flow path 40 is provided in a wall constituting the four side portions 2c of the main container 2A. An inlet 40a and an outlet 40b are provided at one end of the heat medium flow path 40 and at the other end thereof. The introduction port 40a is connected to the introduction pipe 41 and the discharge port 40b is connected to the discharge pipe 42, respectively. The introduction pipe 41 and the discharge pipe 42 are connected to a chiller unit 43 as a temperature control device provided outside the process container 2. [

&Lt; Connection structure of main container 2A and upper container 2B >

Next, a connection structure of the main container 2A and the upper container 2B in the inductively coupled plasma processing apparatus 1 of the present embodiment will be described with reference to Figs. 2 and 3. Fig. 2 is a cross-sectional view showing an enlarged view of part A in Fig. Fig. 3 is a plan view of the main part enlargedly showing the upper end face of the side portion 2c of the main container 2A. As shown in Figs. 2 and 3, an O-ring 51 serving as a vacuum chamber and a spiral as an electromagnetic wave shielding member functioning as a conductive member are formed on the entire upper surface of the side portion 2c of the main container 2A. A shield 53, and a heat insulating member 52 are provided. The O ring 51, the spiral shield 53 and the heat insulating member 52 are disposed in this order from the inner side of the processing vessel 2 (the side of the processing chamber 5) to the outside. In the present embodiment, the spiral shield 53 is provided at a position closer to the inside of the treatment chamber 5 than the heat insulating member 52, so that the heat insulating member 52 can be prevented from being exposed to high frequency or plasma. Therefore, deterioration of the heat insulating member 52 is prevented, and the thermal shutoff effect of the main container 2A and the upper container 2B can be secured for a long time, and the service life can be prolonged.

<O ring>

The O-ring 51 is a vacuum chamber member and maintains the airtightness between the main container 2A and the upper container 2B and keeps the inside of the process chamber 5 in a vacuum state. The O-ring 51 is fitted in an O-ring groove 61, which is a recess formed in the upper end surface of the side portion 2c of the main container 2A. Examples of the material of the O-ring 51 include nitrile rubber (NBR), fluorine rubber (FKM), silicone rubber (Q), fluorosilicone rubber (FVMQ), perfluoropolyether rubber (FO) ACM), and ethylene propylene rubber (EPM).

<Spiral shield>

The spiral shield 53 is fitted in the shielding groove 63 formed in the upper end surface of the side portion 2c of the main container 2A. The spiral shield 53 is made of a metal such as aluminum, stainless steel, copper, iron or the like and ensures continuity between the main container 2A and the upper container 2B and keeps the upper container 2B at the ground potential. Further, the spiral shield 53 prevents leakage of high frequency or plasma from between the main container 2A and the upper container 2B.

&Lt; Heat insulating member &

The heat insulating member 52 is fitted in the heat insulating member groove 62 formed on the upper end surface of the side portion 2c of the main container 2A. The heat insulating member 52 is composed of a plurality of heat-insulating sheets 54 in a reed shape. That is, the heat insulating sheet 54 is formed into a thin plate shape having a rectangular upper surface and a bottom surface and four side surfaces. The upper surface of the heat insulating sheet 54 is a surface abutting the lower end (that is, the lower end of the lid member 7) of the upper container 2B. The heat insulating member 52 can be made of synthetic resin or ceramics, for example, as a material having a low thermal conductivity and capable of withstanding the temperature reached by the main container 2A. Particularly, desirable.

When a synthetic resin is used as the heat insulating member 52, it is preferable that the glass transition temperature (Tg) exceeds 125 deg. C, for example. When the glass transition temperature Tg of the heat insulating member 52 is 125 DEG C or lower, it may be deformed by heat due to the plasma in the treatment chamber 5, and the heat insulating effect may be impaired.

The thermal conductivity of the heat insulating member 52 is preferably 1 W / mK or less when the synthetic resin is used as the material of the heat insulating sheet 54 in order to suppress the heat conduction between the main container 2A and the upper container 2B as much as possible Or less, and in the case of using ceramics, it is preferably 40 W / mK or less, for example.

The heat insulating member 52 can withstand the pressure of the upper container 2B when the processing chamber 5 is put in a vacuum state in the case of processing the substrate S having a large area in the inductively coupled plasma processing apparatus 1 It is preferable to have a compressive strength.

As the heat insulating member 52, for example, polyetheretherketone (PEEK) resin, polyethylene sulfide (PPS) resin, wholly aromatic polyimide resin, polyetherimide (PEI), MC nylon Synthetic resin, ceramics such as zirconia (ZnO ₂ ) and alumina (Al ₂ O ₃ ) can be used.

The heat insulating member (52) is divided into a plurality of rectangular heat insulating sheets (54). As described above, by dividing the heat insulating sheet 54 into a plurality of heat insulating sheets 54, it is easy to arrange the large-sized processing vessel 2 for processing the FPD substrate, for example. It is preferable that the interval between the adjacent heat insulating sheets 54 is set to an interval enough for the adjacent heat insulating sheets 54 to make contact with each other when the heat insulating sheets 54 are thermally expanded at a temperature of, , For example, within a range of 1 mm to 3 mm, preferably about 2 mm.

The thickness of each heat insulating sheet 54 constituting the heat insulating member 52 is preferably set within a range of 0.5 mm to 20 mm when a synthetic resin is used as the material of the heat insulating sheet 54, It is preferable to set it within a range of 5 mm or more and 20 mm or less, for example. The thickness of each heat insulating sheet 54 is larger than the depth of the heat insulating member groove 62 and the upper surface of the heat insulating sheet 54 protrudes from the heat insulating member groove 62.

2, the gap CL is provided between the main container 2A and the upper container 2B by the heat insulating member 52. As shown in Fig. This gap CL ensures sufficient thermal insulation between the main container 2A and the upper container 2B and also ensures that even when the upper container 2B is deformed by heat, Is set. Therefore, the gap CL is set within a range of 0.1 mm or more and 2 mm or less, for example. When the gap CL is less than 0.1 mm, the heat insulating property between the main container 2A and the upper container 2B tends to be insufficient, and even when the upper container 2B is deformed by heat, 2B) can not be ensured sufficiently. When the gap CL exceeds 2 mm, the heat insulating performance is improved, but the vacuum holding function by the O-ring 51 and the function of shielding the high frequency and the plasma by the spiral shield 53 are lowered, It becomes difficult to ensure conduction between the upper container 2B.

Each of the heat insulating sheets 54 is fixed to the side portion 2c of the main container 2A by a plurality of screws 55 in a state of being fitted in the heat insulating member groove 62, for example. The method for fixing the heat insulating sheet 54 is not particularly limited.

Next, the processing operation when plasma processing is performed on the substrate S using the inductively coupled plasma processing apparatus configured as described above will be described.

First, in a state in which the gate valve 27 is opened, the substrate S is carried into the processing chamber 5 by a transporting mechanism (not shown), mounted on the mounting surface 22A of the susceptor 22, The substrate S is fixed on the susceptor 22.

Next, the process gas is discharged from the gas supply device 20 through the gas supply pipe 21, the gas flow path (not shown) and the plurality of openings in the support beam 16 into the process chamber 5, 30 to exhaust the inside of the processing chamber 5 through the exhaust pipe 31, thereby keeping the inside of the processing chamber at a pressure atmosphere of, for example, about 1.33 Pa.

Next, high-frequency power of 13.56 MHz is applied to the antenna 13 from the high-frequency power source 15, thereby forming a uniform induction field in the treatment chamber 5 through the dielectric wall 6. [ The induced electric field formed in this manner causes the process gas to be plasmaized in the process chamber 5, and a high-density inductively coupled plasma is produced. The ions in the plasma thus generated are effectively attracted to the substrate S by the high-frequency power applied from the high-frequency power source 29 to the susceptor 22, and the plasma is uniformly applied to the substrate S.

During the plasma treatment, the main container 2A is heated to a high temperature by the heat of the plasma, but because the main container 2A is thermally separated by the heat insulating member 52 between the main container 2A and the upper container 2B, 2B can be prevented from being deformed, and vacuum leakage and breakage of the dielectric wall 6 can be prevented. Since the temperature of the main container 2A can be controlled independently of the upper container 2B by the chiller unit 43, the temperature control of the plasma process performed in the process chamber 5 is facilitated , The stability of the process can be enhanced. In this embodiment, the temperature adjusting facility of the upper container 2B is omitted by thermally separating the main container 2A and the upper container 2B by the heat insulating member 52. [

<Experimental Results>

Here, the experimental results confirming the effects of the present invention will be described. The temperature of the main container 2A and the temperature of the upper container 2B were measured while the plasma etching process was performed on the thin film on the surface of the substrate S by using the inductively coupled plasma processing apparatus 1 having the configuration as shown in Fig. . As a result, the temperature of the main container 2A was between 96 and 101 DEG C, the temperature of the upper container 2B was between 48 and 50 DEG C, and the temperature between the main container 2A and the upper container 2B A temperature difference of about 50 占 폚 could be secured. It has been confirmed from this measured data that the heat conduction from the main container 2A to the upper container 2B can be effectively blocked by the heat insulating member 52 interposed between the main container 2A and the upper container 2B .

As described above, in the inductively coupled plasma processing apparatus 1 of the present embodiment, the heat insulating member 52 is disposed between the main container 2A and the upper container 2B, The main container 2A and the upper container 2B can be reliably and thermally separated from each other by preventing the main container 2A and the main container 2B from directly contacting each other. This makes it possible to control the temperature of the main container 2A and the temperature of the upper container 2B, respectively, and simplify the temperature control equipment such as a chiller. In addition, the occurrence of vacuum leakage due to thermal deformation of the upper container 2B and the breakage of the dielectric wall 6 can be prevented in advance.

[Second embodiment] Fig.

Next, an inductively coupled plasma processing apparatus according to a second embodiment of the present invention will be described with reference to FIG. 4 is a cross-sectional view schematically showing a configuration of an inductively coupled plasma processing apparatus according to a second embodiment of the present invention. The inductively coupled plasma processing apparatus 101 according to the second embodiment is different from the inductively coupled plasma processing apparatus 1 according to the first embodiment except that the temperature controller is provided in the upper container 2B as well as the main container 2A. (1). Therefore, in Fig. 4, the same components as those in Fig. 1 are denoted by the same reference numerals, and a description thereof will be omitted.

As shown in Fig. 4, a heating medium passage 70 is provided in a wall constituting the upper container 2B. An inlet port 70a and an outlet port 70b are provided at one end of the heat medium flow path 70 and at the other end thereof. The introduction port 70a is connected to the introduction pipe 71 and the discharge port 70b is connected to the discharge pipe 72, respectively. The introduction pipe 71 and the discharge pipe 72 are connected to a chiller unit 73 provided outside the processing vessel 2. 4, in addition to the chiller unit 43 provided in the main container 2A as the first temperature control device, the inductively coupled plasma processing apparatus 101 of the present embodiment has the second temperature control And a chiller unit 73 provided in the upper container 2B as an apparatus. The main container 2A and the upper container 2B are thermally separated from each other by the heat insulating member 52. This allows the chiller unit 43 and the chiller unit 73 to heat- It is possible to easily control the temperature of the upper container 2A and the upper container 2B independently of each other. Therefore, the degree of freedom of temperature control of the plasma process performed in the process chamber 5 is increased, and the stability of the process can be enhanced.

Other configurations and effects in this embodiment are the same as those in the first embodiment.

[Third embodiment] Fig.

Next, an inductively coupled plasma processing apparatus according to a third embodiment of the present invention will be described with reference to Fig. 5 is a cross-sectional view schematically showing a configuration of a principal part of an inductively coupled plasma processing apparatus according to a third embodiment of the present invention. Fig. 5 is an enlarged view of a portion (portion A) corresponding to Fig. 2 in the inductively coupled plasma processing apparatus 1 of the first embodiment. The inductively coupled plasma processing apparatus according to the present embodiment is the same as the inductively coupled plasma processing apparatus 1 according to the first embodiment except for the configuration of the portion A. For this reason, in Fig. 5, the same components as those in Fig. 1 are denoted by the same reference numerals, and a description thereof will be omitted.

5, an O-ring 51, a heat insulating member 52, and a spiral shield (not shown) are formed on the entire upper surface of the side surface 2c of the inductive coupling plasma processing apparatus according to the present embodiment. 53 are disposed. The O-ring 51, the heat insulating member 52 and the spiral shield 53 are disposed in this order from the inner side (the processing chamber 5 side) of the processing vessel 2 to the outside. The configuration and operation of the O-ring 51, the heat insulating member 52 and the spiral shield 53 are the same as those of the first embodiment.

Other configurations and effects in this embodiment are the same as those in the first embodiment.

While the embodiments of the present invention have been described in detail for the purpose of illustration, the present invention is not limited to the embodiments described above. For example, although the inductively coupled plasma apparatus is described as an example in the above embodiments, the present invention can be applied to any plasma processing apparatus having a processing vessel divided into a plurality of portions. For example, a parallel plate type plasma apparatus, a surface wave plasma The present invention is also applicable to other types of plasma apparatus such as a plasma processing apparatus, an electron cyclotron resonance (ECR) plasma apparatus, and a helicon plasma apparatus. Further, the present invention is not limited to the dry etching apparatus, but may equally be applied to a film forming apparatus or an ashing apparatus.

Further, the present invention can be applied not only to an FPD substrate as an object to be processed, but also to a case where a semiconductor wafer or a solar cell substrate is used as an object to be processed.

Although the heat insulating member 52 is disposed in the main container 2A in each of the above embodiments, the heat insulating member 52 may be disposed on the side of the upper container 2B.

1: Inductively coupled plasma processing device 2A: Main vessel
2B: upper container 4: antenna chamber
5: Treatment chamber 6: Dielectric wall
7: lid member 8: suspender
13: antenna 14: matching device
15: High frequency power source 16: Support beam
20: gas supply device 21: gas supply pipe
22: susceptor 22A: mounting surface
24: Insulator frame 25: Support
26: Bellows 28: Matching machine
29: high-frequency power source 30: exhaust device
31: Exhaust pipe 51: O-ring
52: heat insulating member 53: spiral shield
54: Heat insulating sheet 61: O-ring groove
62: groove for heat insulating member 63: shielding groove

Claims (17)

1. A plasma processing container for forming a processing chamber for performing plasma processing on an object to be processed,
A main body container,
An upper container &lt; RTI ID = 0.0 &gt;
And,
Wherein a vacuum seal member, a heat insulating member, and an electromagnetic wave shielding member are interposed between the main container and the upper container, and between the main container and the upper container
&Lt; / RTI &gt;
The method according to claim 1,
Wherein the heat insulating member comprises a plurality of divided heat insulating sheets.
3. The method of claim 2,
Wherein the vacuum chamber member, the electromagnetic wave shielding member, and the heat insulating member are disposed in this order from the inside toward the outside of the treatment chamber.
3. The method of claim 2,
Wherein the vacuum chamber member, the heat insulating member, and the electromagnetic wave shielding member are disposed in this order from the inside toward the outside of the treatment chamber.
5. The method according to any one of claims 2 to 4,
Wherein the heat insulating sheet is made of a synthetic resin having a glass transition temperature (Tg) of more than 125 캜.
6. The method of claim 5,
Wherein the thermal conductivity in the thickness direction of the heat insulating sheet is 1 W / mK or less.
The method according to claim 5 or 6,
Wherein the synthetic resin is at least one selected from the group consisting of polyetheretherketone (PEEK) resin, polyethylene sulfide (PPS) resin, wholly aromatic polyimide resin, polyetherimide (PEI) and MC nylon.
8. The method according to any one of claims 5 to 7,
Wherein the thickness of the heat insulating sheet is within a range of 0.5 mm to 20 mm.
5. The method according to any one of claims 2 to 4,
Wherein the heat insulating sheet is made of ceramics.
10. The method of claim 9,
Wherein the thermal conductivity of the heat insulating sheet in the thickness direction is 40 W / mK or less.
11. The method according to claim 9 or 10,
Wherein the thickness of the heat insulating sheet is within a range of 5 mm to 20 mm.
12. The method according to any one of claims 2 to 11,
Wherein the gap between the main container and the upper container is within a range of 0.1 mm to 2 mm by the heat insulating sheet.
13. The method according to any one of claims 2 to 12,
Wherein the heat insulating sheet is disposed in a concave portion provided in the main body container.
14. The method according to any one of claims 2 to 13,
Wherein an interval between the adjacent heat insulating sheets is within a range of 1 mm or more and 3 mm or less.
15. The method according to any one of claims 1 to 14,
Wherein the main container and the upper container each have a temperature control device.
A plasma processing apparatus comprising the plasma processing container according to any one of claims 1 to 15.
17. The method of claim 16,
A mounting table provided in the plasma processing container and on which an object to be processed is mounted,
An antenna provided outside the processing vessel to form an induction field in the processing vessel,
A dielectric wall provided between the antenna and the processing vessel,
A high frequency power source for applying an RF electric power to the antenna to form an induced electric field,
A processing gas supply means for supplying a processing gas into the processing vessel,
An exhaust means for evacuating the inside of the processing container to a vacuum or a reduced pressure state;
Wherein the inductively coupled plasma processing apparatus is an inductively coupled plasma processing apparatus having a plasma processing apparatus.

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