KR102324032B1 - Substrate supporting module and substrate processing apparatus having the same - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate support for a substrate processing apparatus that performs substrate processing such as etching and deposition on a substrate, and a substrate processing apparatus installed therewith.
The present invention relates to a substrate processing apparatus including a process chamber for forming a processing space for performing substrate processing on two rectangular substrates introduced from the outside, and a substrate support installed in the process chamber to support two rectangular substrates. An electrostatic chuck on which a substrate is seated as a substrate support; at least one outer shield member detachably installed along an edge of the electrostatic chuck; at least one central shield member installed on an upper surface of an electrostatic chuck corresponding between the two rectangular substrates to partition the two rectangular substrates into a pair of support regions supporting each of the two rectangular substrates to connect the outer shield members; A base material having a silver, metallic material, a first insulating layer formed on the base material by thermal spraying, a conductor layer formed on the first insulating layer and connected to a DC power supply to generate electrostatic force by applying power, and on the conductor layer a second insulating layer formed by thermal spraying, the base material has a base groove formed on the upper surface corresponding to the central shield member, and the base groove is an insulating layer formed on the surface of the base material, and finally the central shield member is inserted. Disclosed is a substrate support of a substrate processing apparatus, characterized in that the groove is formed.

Description

Substrate supporting module and substrate processing apparatus having the same

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate support for performing substrate processing such as etching and deposition on a substrate, and to a substrate processing apparatus provided therewith.

A substrate processing apparatus generally includes a process chamber for forming a processing space for processing a substrate, and a substrate support installed in the process chamber to support a substrate.

In addition, in the substrate processing apparatus, a gas supply unit such as a showerhead, an exhaust system for pressure control and exhaust, etc. are installed according to the type and method of substrate processing.

Meanwhile, when substrate processing is performed under vacuum pressure, an electrostatic chuck for adsorbing and fixing the substrate by electrostatic force is installed.

The substrate processing apparatus having the above configuration increases in size according to the size of the substrate based on substrate processing such as 6th generation, 7th generation, and 8th generation, and the size, recipe, etc. are optimized according to the increased substrate standard This is common.

However, the substrate processing apparatus optimized for each size as described above cannot be used for processing substrates with different specifications, that is, different sizes. There is a problem in that the investment cost is generated.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate support on which two rectangular substrates are seated and a substrate processing apparatus installed thereon to perform substrate processing.

The present invention was created to achieve the object of the present invention as described above, and the present invention includes a process chamber for forming a processing space for performing substrate processing on two rectangular substrates introduced from the outside, and the process A substrate support for a substrate processing apparatus installed in a chamber and including a substrate support for supporting the two rectangular substrates, comprising: an electrostatic chuck on which the substrate is mounted; at least one outer shield member detachably installed along an edge of the electrostatic chuck; and at least one central shield member installed on the upper surface of the electrostatic chuck corresponding between the two rectangular substrates to partition the two rectangular substrates into a pair of support regions supporting each of the two rectangular substrates and connecting the outer shield members. The electrostatic chuck includes a base material having a metal material, a first insulating layer formed on the base material by thermal spraying, and formed on the first insulating layer and connected to a DC power source to generate electrostatic force by applying power. a conductor layer and a second insulating layer formed by thermal spraying on the conductor layer, wherein the base material has a base groove formed on its upper surface corresponding to the central shield member, and the base groove has an insulating layer on the surface Disclosed is a substrate support for a substrate processing apparatus, characterized in that it forms an insertion groove into which the central shield member is finally inserted.

The base groove may be formed so that the inner surface is inclined with the upper surface of the base material and the width decreases from the upper side to the lower side.

An obtuse angle among the inclination angles between the upper surface of the base material and the inner surface of the base groove may be inversely proportional to the depth of the base groove.

The base material has an aluminum material or an aluminum alloy material, and is anodized before the formation of the first insulating layer, and the inner surface of the base groove may be perpendicular to the upper surface of the base material.

Each of the support regions includes a plurality of protrusions protruding between the bottom surface of the substrate and the top surface of the electrostatic chuck so that the heat transfer gas can be filled, and a dam supporting the edge of the bottom surface of the substrate to prevent the heat transfer gas from leaking to the outside. can be formed.

The upper surface of the central shield member may be formed to be equal to or lower than the height of the dam.

The central shield member may be positioned between dams corresponding to inner sides of the rectangular substrates facing each other.

In each of the support regions, the supply of heat transfer gas may be independently controlled.

The central shield member may be integrally formed at least partially with the outer shield member.

At least a portion of the central shield member and the outer shield member may overlap each other.

The present invention also provides a process chamber for forming a processing space for performing substrate processing on two rectangular substrates introduced from the outside; Disclosed is a substrate processing apparatus installed in the process chamber and comprising a substrate supporter having the above configuration as a substrate supporter for supporting the two rectangular substrates.

A substrate support and a substrate processing apparatus installed thereon according to the present invention provide a substrate support capable of supporting rectangular substrates separated into two in the configuration of a substrate processing apparatus that processes a substrate before separation into two sheets, There is an advantage in that the rectangular substrates divided into two can be processed at once by a simple modification of the substrate processing apparatus that processes the substrates before separating them into two sheets.

In particular, the substrate support and the substrate processing apparatus provided therewith according to the present invention include a first electrostatic chuck and a first electrostatic chuck in correspondence to rectangular substrates divided into two in the configuration of the substrate processing apparatus for processing a substrate before separation into two sheets. By including the substrate support on which the second electrostatic chuck is installed, there is an advantage in that the rectangular substrates separated into two can be processed at once by a simple modification of the substrate processing apparatus that processes the substrate before separating into two.

In addition, the substrate support and the substrate processing apparatus installed therein according to the present invention protect the electrostatic chuck at a position corresponding to the position between the rectangular substrates divided into two in the configuration of the substrate processing apparatus for processing the substrate before separation into two sheets By additionally installing a central shield member for

In particular, the substrate support and the substrate processing apparatus installed therein according to the present invention can process the rectangular substrates separated into two sheets at once by a simple modification of the substrate processing apparatus that processes the substrates before separating them into two sheets. By maximizing the recycling of existing equipment, there is an advantage in that it is possible to minimize the cost of equipment investment added to the processing of the divided substrate despite the division of the substrate to be treated.

Furthermore, in the substrate support and the substrate processing apparatus installed therein according to the present invention, in the configuration of the substrate processing apparatus for processing the substrate before separation into two sheets, the electrostatic chuck is positioned corresponding to the position between the rectangular substrates divided into two sheets. In additionally installing the central shield member for protection, a base groove corresponding to the central shield member is formed in the base material, an insulating layer is formed on the surface of the base material, and an insertion groove is finally formed, so that insertion and installation of the central shield member is easy. .

In addition, in forming the insulating layer on the surface of the base groove, the inner surface is inclined to cover all the surface of the base material when the insulating layer is formed by thermal spraying, thereby effectively preventing the surface of the base material from being exposed to the outside.

1 is a plan view showing a substrate processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view taken in the II-II direction of the substrate processing apparatus of FIG. 1 .
FIG. 3 is a cross-sectional view in the III-III direction of the substrate processing apparatus of FIG. 1 .
FIG. 4 is an enlarged view of a portion in which the outer shield member and the central shield member are installed in FIG. 2 .
FIG. 5 is a cross-sectional view illustrating an example having a deformed electrostatic chuck in the substrate processing apparatus of FIG. 1 .
5A to 5D are partial cross-sectional views illustrating embodiments of a base material used for a substrate support of the substrate processing apparatus of FIG. 1 .
FIG. 6 is a partial cross-sectional view illustrating an example in which a base material is used for a substrate support of the substrate processing apparatus of FIG. 1 , in which the base groove is perpendicular to the upper surface.

Hereinafter, the substrate support of the substrate processing apparatus according to the present invention and the substrate processing apparatus installed thereon will be described with reference to the accompanying drawings. For reference, FIGS. 1 to 6D are shown for the purpose of explanation of the present invention, and it goes without saying that some configurations are exaggerated or different from the actual ones.

First, the technical gist of the present invention is to provide a substrate processing apparatus characterized in that the substrate processing is performed on two rectangular substrates having a size divided into two sheets at a time.

In particular, in processing two rectangular substrates (preferably having the same size), the configuration of the substrate support supporting the two substrates is important.

Accordingly, in the substrate processing apparatus according to the present invention, in the configuration of the substrate support, the configuration of the substrate support can be modified so that two substrates can be stably adsorbed and fixed with one electrostatic chuck.

Hereinafter, an embodiment in which two substrates can be stably adsorbed and fixed with one electrostatic chuck will be described.

As shown in FIGS. 1 and 2 , the substrate processing apparatus according to the present invention provides a process chamber for forming a processing space S for performing substrate processing on two rectangular substrates 10 introduced from the outside. 100 and a substrate support 130 installed in the process chamber 100 to support two rectangular substrates 10 .

Here, the substrate treatment may be various processes such as a deposition process for forming a thin film on the surface of the substrate, an etching process for etching, and the like.

In addition, the target of substrate processing, such as substrates for LCD panels, OLED substrates, etc., substrate processing such as etching and deposition are all possible.

The process chamber 100 may be configured to include a chamber body 110 and an upper lid 120 that are detachably coupled to each other to form a processing space (S).

The chamber body 110 may have various configurations depending on the design and design, and at least one gate 111 that is opened and closed by a gate valve (not shown) is formed so that the substrate 10 can be entered and exited.

On the other hand, the process chamber 100 is supplied from a gas supply device (not shown), the gas supply unit 140 for injecting the processing gas into the processing space (S), and a substrate supporter 130 on which the substrate 10 is seated; Devices for performing a vacuum treatment process, such as an exhaust pipe (not shown) connected to an exhaust system for pressure control and exhaust in the processing space S, may be installed.

The substrate support 130 may be provided with a lower electrode (not shown) to which power is applied so that a reaction for vacuum treatment, such as plasma formation for performing a process, occurs in the processing space (S).

Here, the lower electrode grounded the chamber body 110 and the gas supply unit 140 according to a power application method, and one or two RF power sources are applied, or the lower electrode is grounded and the chamber body 110 and the gas supply unit 140 are grounded. ), power may be applied in various forms, such as a first RF power applied to the lower electrode and a second RF power applied to the chamber body 110 and the gas supply unit 140 .

On the other hand, the substrate support 130 includes a plurality of lift pins (not shown) that lift the substrate 10 up and down so that the substrate 10 can be taken out by a transfer robot, and lift pins with respect to the substrate support 130 . A lifting device for moving up and down may be installed.

Here, the elevating device may have various configurations according to the elevating method for the substrate support 130 .

In addition, the substrate support 130 is coupled to the lower side of the electrostatic chuck 200 to be described later to increase the temperature for processing the substrate by plasma or to cool the heat generated in the processing process, and is a heat transfer fluid for temperature control. It may further include a cooling plate (cooling plate; 132) in which the flow passage is formed.

In addition, the substrate support 130 may be configured such that the chamber body 110 is grounded, so that the electrostatic chuck 200 and the chamber body 110 may be insulated from the chamber body 110 . An insulating member 131 may be additionally installed therebetween.

The insulating member 131 is preferably coupled to the lower side of the cooling plate 132 when the cooling plate 132 is installed as described above.

Also, the substrate support 130 may further include a base plate (not shown) coupled to the lower side of the insulating member 131 and supported by a plurality of flanges 160 installed on the bottom surface of the chamber body 110 . .

In addition, although the substrate support 130 is illustrated as being fixed in the process chamber 100 , it may be installed to be movable up and down in the process chamber 100 .

In addition, the substrate support 130 includes, as shown in FIGS. 1 to 4B , an electrostatic chuck 200 for adsorbing and fixing the substrate 10 using an electrostatic force; at least one outer shield member 250 detachably installed along the edge of the electrostatic chuck 200 to form a rectangle; The outer shield is installed on the upper surface of the electrostatic chuck 200 corresponding to between the two rectangular substrates 10 so as to be divided into a pair of support regions A1 and A2 supporting each of the two rectangular substrates 10 . One or more central shield members 270 connecting the members 250 are included.

The electrostatic chuck 200 includes, as shown in FIGS. 2 to 4 , a base material 210 having a rectangular planar shape and a metal material; a first insulating layer 220 formed on the base material 210 by thermal spraying; a conductor layer 230 formed on the first insulating layer 220 and connected to a DC power source to generate an electrostatic force by applying power; A second insulating layer 240 formed by thermal spraying on the conductive layer 230 is included.

The base material 210 is a metal material, for example, aluminum, aluminum alloy, Ti, stainless steel (SUS), to function as a lower electrode of the power supply unit when grounded or RF power is applied as well as a rectangular shape in a plane shape. or STS) and the like may be used.

And the base material 210, the base groove 217 is formed in the upper surface corresponding to the central shield member (270).

The base recess 217 is finally formed to form an insertion recess 247 into which the central shield member 270 is inserted, and the insertion recess 247 into which the central shield member 270 is inserted after the insulating layer is formed. The cross-sectional shape and depth are determined by considering the dimensions of

Meanwhile, the base recess 217 may be formed when at least one insulating layer of the first insulating layer 220 and the second insulating layer 240 is formed, or an insulating layer may be formed separately, and the insulating layer is subjected to thermal spraying. 2 to 4 and 5a to 5d in consideration of the coating, the inner surface is inclined with the upper surface of the base material 210, and the width thereof is preferably formed so as to decrease from the upper side to the lower side.

In particular, the obtuse angle θ among the inclination angles between the upper surface of the base material 210 and the inner surface of the base groove 217 is, as shown in FIGS. 5A to 5D, the depth (H) of the base groove 217 It is preferable to be inversely proportional to

As described above, the thickness of the insulating layer to be formed is relatively small when the depth is small when the insulating layer is formed on the inner peripheral surface of the base recess 217 by plasma spraying, so that the upper surface of the base material 210 and the base recess 217 This is because the insulating layer can be smoothly formed on the inner peripheral surface of the base groove 217 only when the obtuse angle θ among the inclination angles formed by the inner surface of the base groove 217 is inversely proportional to the depth H of the base groove 217 .

Meanwhile, when the base material 210 is made of stainless steel (SUS or STS), the central shield member 270 preferably has a ceramic material in consideration of thermal expansion.

Here, of course, when the base material 210 is aluminum or an aluminum alloy, the central shield member 270 may be made of aluminum or an aluminum alloy material, a ceramic material, or the like.

And when the base material 210 has an aluminum material or an aluminum alloy material, it is anodized before the formation of the first insulating layer 220, and the inner surface of the base groove 217 is inclined with the upper surface of the base material 210. In addition to forming, as shown in FIGS. 4 and 6 , it may be vertical.

Various materials may be used for the first insulating layer 220 and the second insulating layer 240 to have a predetermined dielectric constant in order to function as an electrostatic chuck, and insulating materials Al ₂ O ₃ , ZrO ₃ , Ceramic materials such as AlN and Y ₂ O _{3 may be used.}

Here, the second insulating layer 240 forms a pair of support regions A1 and A2 supporting each of the two rectangular substrates 10 .

In addition, the second insulating layer 240 forming the pair of support regions A1 and A2 supports the substrate 10 and controls the bottom surface of the substrate 10 and the electrostatic chuck 200, that is, the electrostatic chuck 200 for temperature control. A plurality of protrusions 241 are formed to protrude between the upper surface of the chuck 200 so that a heat transfer gas such as helium (He) can be filled, and the bottom edge of the substrate 10 to prevent the heat transfer gas from leaking to the outside. A dam 242 supporting the may be formed.

Meanwhile, at least one of the first insulating layer 220 and the second insulating layer 240 or a separate insulating layer may be formed in the base recess 217 formed in the base material 210, and the upper surface of the finally formed insulating layer An insertion groove 247 into which the central shield member 270 is inserted is formed.

The insertion groove 247 is a groove in which at least one of the first insulating layer 220 and the second insulating layer 240 is formed to insert the central shield member 270, and may be formed in various ways depending on the design and design. can

In particular, in the insertion recess 247 , the lower end of the central shield member 270 is the upper surface of the base material 210 considering that the thickness of the first insulating layer 220 , the second insulating layer 240 , etc. is several micrometers. located more deeply.

As described above, when the insertion groove 247 is formed so that the lower end of the central shield member 270 is located deeper than the upper surface of the base material 210, it is possible to effectively prevent the intrusion of plasma during the process, thereby preventing damage to the electrostatic chuck. there will be

The conductor layer 230 is connected to a DC power source to generate an electrostatic force together with the second insulating layer 240 to adsorb and fix the substrate 10 seated on the second insulating layer 240, and tungsten A conductive material such as (W) may be used.

In addition, the conductive layer 230 may be divided into a plurality of layers so as to rapidly generate an electrostatic force and prevent a voltage difference from occurring.

In particular, the conductive layer 230 may be separately formed to correspond to the pair of support regions A1 and A2, and may receive DC power by a separate DC power source or a single DC power source, respectively.

Here, it is preferable that the DC power applied to the conductor layer 230 is independently controlled corresponding to each substrate 10 .

Specifically, in the electrostatic chuck 200 , the conductive layer 230 , which generates an electrostatic force when power is applied, may be formed separately or integrally to correspond to each of the pair of support regions A1 and A2 .

That is, the conductive layer 230 may be formed in a predetermined pattern on the first insulating layer 220 except for a portion corresponding to the base recess 217 .

In addition, in the supply of the heat transfer gas, the heat transfer gas supply may be controlled separately or integratedly, corresponding to the pair of support regions A1 and A2.

The first insulating layer 220 , the conductive layer 230 , and the second insulating layer 240 can be formed by various methods, for example, by plasma spraying.

Meanwhile, as shown in FIGS. 1 to 4B , a step 202 may be formed at an edge of the electrostatic chuck 200 so that the outer shield member 250 can be stably installed.

The outer shield member 250 is configured to protect the upper exposed portion of the electrostatic chuck 200 from plasma while the substrate 10 is seated on the substrate support 130 , that is, the electrostatic chuck 200 . As the plasma-resistant material, _{it is preferable that the insulating material is made of a ceramic material such as Al 2} O ₃ , ZrO ₃ , AlN and Y ₂ O ₃ , polycarbonate, Teflon, or the like.

In addition, the outer shield member 250 may be composed of a plurality of members to be usable in the large-sized electrostatic chuck 200, and may have a structure as disclosed in Korean Patent Application Laid-Open No. 10-2014-0060662. have.

Meanwhile, on the side surface of the base material 210 , as shown in FIGS. 2 and 3 , a side shield member 280 is provided to prevent the electrostatic chuck 200 and the cooling plate 132 from being damaged by plasma. Additional can be installed.

The side shield member 280 is installed on the side surface of the base material 210 to prevent the electrostatic chuck 200 from being exposed to the outside, and is an insulating material that is strong against plasma Al ₂ O ₃ , ZrO ₃ , It is preferably made of a ceramic material such as AlN and Y ₂ O _{3 , polycarbonate, Teflon, or the like.}

The central shield member 270 is provided with an outer shield member 250 between the two rectangular substrates 10 to be partitioned into a pair of support areas A1 and A2 supporting each of the two rectangular substrates 10 . ) as a member for connecting various configurations is possible.

In particular, the central shield member 270 is installed to partition into a pair of support areas A1 and A2 supporting each of the two rectangular substrates 10 , and the second insulating layer 240 , that is, the electrostatic chuck As a configuration for preventing exposure of 200 to plasma, it is made of a ceramic material such as _{Al 2} O ₃ , ZrO ₃ , AlN and Y ₂ O _{3 , which is an insulating material strong against plasma, polycarbonate, Teflon, etc.} desirable.

In addition, at least a portion of the central shield member 270 and the outer shield member 250 may be integrally formed.

In addition, in order to prevent plasma from entering the electrostatic chuck 200 at a boundary portion with the outer shield member 250 , the central shield member 270 preferably overlaps the outer shield member 250 at least in part. do.

In addition, the upper surface of the central shield member 270 is preferably formed to be equal to or lower than the height of the dam 242 so that the upper surface of the dam 242 can support the lower surface of the substrate 10 .

In addition, the central shield member 270 is preferably positioned between the dams 242 corresponding to the inner sides of the rectangular substrates 10 facing each other.

By the additional installation of the central shield member 270 having the above configuration, in the configuration of the substrate processing apparatus for processing the substrate before separating into two sheets, it is a simple method of processing the substrate before separating into two sheets There is an advantage in that the rectangular substrates 10 separated into two by deformation (electrostatic chuck replacement) can be processed at once.

Since the above has only been described with respect to some of the preferred embodiments that can be implemented by the present invention, the scope of the present invention, as noted, should not be construed as being limited to the above embodiments, and It will be said that the technical idea and the technical idea with the root are all included in the scope of the present invention.

10: substrate 100: substrate processing device
130: substrate support 200: electrostatic chuck
270: central shield member

Claims (20)

delete delete delete delete delete delete delete delete delete delete delete A process chamber having a processing space capable of processing a rectangular substrate before being divided into two, and provided in the process chamber, as long as the rectangular substrate before division supports each of the two rectangular substrates divided into two A substrate support for a substrate processing apparatus comprising a substrate support having a pair of support regions, the substrate support comprising:
an electrostatic chuck on which the substrate is mounted;
at least one outer shield member detachably installed along an edge of the electrostatic chuck;
at least one central shield member fixed to the upper surface of the electrostatic chuck corresponding between the two rectangular substrates and connecting the outer shield member to partition the two rectangular substrates into a pair of support regions supporting each of the two rectangular substrates; includes,
The electrostatic chuck includes a base material having a metal material, a first insulating layer formed on the base material by thermal spraying, and a conductor layer formed on the first insulating layer and connected to a DC power source to generate electrostatic force by applying power. and a second insulating layer formed by thermal spraying on the conductor layer,
The base material has a base groove formed on its upper surface corresponding to the central shield member,
The base groove has an insulating layer formed on its surface to form an insertion groove into which the central shield member is finally inserted,
A plurality of lift pins are installed to elevate the substrate up and down so as to introduce the substrate into the process chamber or take out the substrate from the process chamber,
wherein the central shield member overlaps at least a portion of the outer shield member at a boundary portion with the outer shield member;
Both ends of the central shield member are located inside the outer edge of the outer shield member,
The base groove, the inner surface of the substrate support of the substrate processing apparatus, characterized in that formed so that the width decreases from the top to the bottom by forming an inclination with the upper surface of the base material. delete 13. The method of claim 12,
An obtuse angle among inclination angles between the upper surface of the base material and the inner surface of the base groove is inversely proportional to the depth of the base groove. 13. The method of claim 12,
The base material has an aluminum material or an aluminum alloy material, and is anodized before the formation of the first insulating layer, and the inner surface of the base groove is perpendicular to the upper surface of the base material. . 13. The method of claim 12,
Each of the support areas is
a plurality of protrusions protruding between the bottom surface of the substrate and the top surface of the electrostatic chuck to be filled with a heating gas;
The substrate support of the substrate processing apparatus, characterized in that the dam supporting the bottom edge of the substrate is formed in order to prevent the heat transfer gas from leaking to the outside. 17. The method of claim 16,
The upper surface of the central shield member, the substrate support of the substrate processing apparatus, characterized in that formed equal to or lower than the height of the dam. 17. The method of claim 16,
and the central shield member is positioned between dams corresponding to inner sides of the rectangular substrates facing each other. 13. The method of claim 12,
The substrate support of the substrate processing apparatus, characterized in that the supply of the heat transfer gas is independently controlled in each of the support regions. a process chamber for forming a processing space for performing substrate processing on two rectangular substrates introduced from the outside;
20. A substrate processing apparatus, comprising the substrate support according to any one of claims 12 and 14 to 19 as a substrate support installed in the process chamber to support the two rectangular substrates.

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