CN104752129A - Tray assembly and etching device - Google Patents
Tray assembly and etching device Download PDFInfo
- Publication number
- CN104752129A CN104752129A CN201310742963.4A CN201310742963A CN104752129A CN 104752129 A CN104752129 A CN 104752129A CN 201310742963 A CN201310742963 A CN 201310742963A CN 104752129 A CN104752129 A CN 104752129A
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- pallet
- cover plate
- chuck
- wafer
- pore
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a tray assembly, which comprises a cover plate and a tray used for supporting wafers, wherein the cover plate is arranged above the tray so as to fix the wafers between the tray and the cover plate, and the cover plate and the tray are provided with an insulating layer therebetween. The invention further provides an etching device comprising the tray assembly. According to the invention, the cover plate and the tray are provided with the insulating layer therebetween, so that the cover plate and the tray are not conductively connected by by-products generated in the etching process, thereby reducing the occurrence possibility of a circumstance that a conductive path is formed among the cover plate, the tray, a chuck and a grounded base, reducing occurrence of a circumstance that energy of plasmas loaded on the wafers is conducted away by the conductive path, and thus improving the etching rate.
Description
Technical field
The present invention relates to microelectronics technology, particularly, relate to a kind of pallet component and a kind of etching apparatus comprising this pallet component.
Background technology
Patterned substrate (PSS, Patterned Sapphire Substrates) technology grows dry etching mask on a sapphire substrate, by the photoetching process of standard, mask is carved figure, utilize semiconductor coupling plasma (ICP, Inductively Coupled Plasma) lithographic technique etching sapphire, and remove mask, then growing GaN (gallium nitride) material thereon, make longitudinal extension of GaN material become horizontal extension.The method effectively can reduce the dislocation density of GaN epitaxy material, thus reduces the non-radiative recombination of active area, reduces reverse leakage current, improves the life-span of light-emitting diode.The light that active area sends, via GaN and Sapphire Substrate interface Multiple Scattering, changes the angle of emergence of total reflection light, thus improves the extraction efficiency of light.
Shown in Fig. 1 and Fig. 2 is the vertical view of pallet and cover plate in the patterned substrate etching apparatus commonly used at present and main cutaway view respectively.As shown in Figures 2 and 3, pallet 4 is arranged on chuck 9, and chuck 9 is fixedly installed in the etching cavity of etching apparatus by the pedestal (being usually made up of metallic aluminium) 12 of conduction.Before etching starts, wafer 1 is arranged on pallet 4, then cover plate 2 is being arranged on pallet 4, and with securing member, cover plate 2 is being fixed on pallet 4.Due to cover plate 2 being provided with through hole, therefore the wafer 1 be arranged on pallet 4 can be exposed.In etching process, plasma attack wafer, can produce the accessory substance (such as, the accessory substance of B, C, O, Cl) with conductivity, this accessory substance is attached on cover plate 2, pallet 4, chuck 9 and pedestal 12 simultaneously.As shown in Figure 3, because chuck 9 is connected with the pedestal 12 of ground connection, thus the accessory substance conducted electricity by pallet, cover plate, chuck and can form conductive path between pedestal and ground, the plasma part energy be deposited on wafer is led away through conductive path, cause the plasma energy acting on wafer to reduce, thus reduce etch rate.
Therefore, how preventing when carrying out etching technics, pallet, the cover plate of etching apparatus, forming conductive path between chuck and pedestal and become this area technical problem urgently to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of pallet component that can prevent from producing between cover plate and pallet conductive path, and a kind of etching apparatus comprising described pallet component.
To achieve these goals, as one aspect of the present invention, a kind of pallet component is provided, this pallet component comprises the pallet of cover plate and supporting wafers, described cover plate is removably disposed in above described pallet, to be fixed between described pallet and described cover plate by described wafer, wherein, between described cover plate and described pallet, be provided with insulating barrier.
Preferably, described insulating barrier is arranged on the lower surface of described cover plate.
Preferably, described cover plate is removably fixed on described pallet by securing member, and described securing member is made up of insulating material.
Preferably, cover plate is provided with the through hole running through described cover plate along described cover sheet thickness direction, described wafer can be arranged on the position described pallet corresponding to described through hole.
Preferably, described pallet component also comprises the chuck for supporting described pallet, the position described pallet corresponding to described through hole is provided with the first pore running through described pallet along described pallet thickness direction, described chuck is provided with the second pore running through described chuck along described chuck thickness direction, described first pore is communicated with described second pore fluid.
Preferably, described pallet is also provided with the first sealing ring, when described wafer is arranged on described pallet, described first sealing ring can prevent the gas passed into by described first pore from overflowing in the space between described pallet and described wafer.Preferably, described pallet component also comprises the second sealing ring, and described second sealing ring is between described pallet and described chuck.
Preferably, described pallet component also comprises pressure ring, and described pressure ring is arranged on the top of described cover plate, described cover plate and described pallet to be fixed on described chuck.
As another aspect of the present invention, provide a kind of etching apparatus, this etching apparatus comprises pallet component, and wherein, described pallet component is above-mentioned pallet component provided by the present invention.
In the present invention, insulating barrier is provided with between described cover plate and described pallet, cover plate can not be connected with pallet conductivity by the conductivity accessory substance therefore produced in etching process, thus reduce the possibility that the situation that forms conductive path between the pedestal of cover plate, pallet, chuck and ground connection occurs, reduce the generation being carried in the situation that the isoionic energy on wafer is led away by conductive path thus, and then improve etch rate.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, is used from explanation the present invention, but is not construed as limiting the invention with embodiment one below.In the accompanying drawings:
Fig. 1 is the vertical view of pallet and cover plate in prior art;
Fig. 2 is that the A-A master of pallet and cover plate in prior art cuts open schematic diagram;
Fig. 3 is the position relationship schematic diagram of pallet, cover plate, chuck and pedestal in prior art;
Fig. 4 is that the master of pallet component in the present invention cuts open schematic diagram;
Fig. 5 is the close-up schematic view of the pallet component in Fig. 4.
Description of reference numerals
1: wafer; 2: cover plate; 3: securing member; 4: pallet; 5: through hole; 6: insulating barrier; 7: the first sealing rings; 8: the second sealing rings; 9: chuck; 10: the second pores; 11: pressure ring; 12: pedestal.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
As an aspect of of the present present invention, as shown in Figure 4, a kind of pallet component is provided, comprise the pallet 4 of cover plate 2 and supporting wafers 1, cover plate 2 is removably disposed in above pallet 4, to be fixed between pallet 4 and cover plate 2 by wafer 1, wherein, insulating barrier 6 is provided with between cover plate 2 and pallet 4.
Be understandable that, cover plate 2 can be made up of metals such as aluminium.In the present invention, not limiting the concrete formation of insulating barrier 6, can be the oxide of the metal making described cover plate, also can be other electron opaque materials.Described pallet component also comprises the chuck 9 of support tray 4, and chuck 9 is arranged on the pedestal 12 of ground connection.Although insulating barrier 6 is arranged between cover plate 2 and pallet 4, this insulating barrier 6 should not block wafer 1, that is, insulating barrier 6 should not hinder the carrying out of normal etching technics.
In the present invention, insulating barrier 6 is provided with between cover plate 2 and pallet 4, even if the accessory substance of the conductivity produced in etching process is attached to the surface of cover plate 2, pallet 4 and pedestal 12, insulating barrier 6 also can block the conductive path between cover plate 2 and pallet 4, reduce the situation generation of wafer 1, conducting between cover plate 2 and pallet 4 three, thus can not described pedestal ground connection be passed through, to such an extent as to the situation that the charged particle in minimizing loading plasma is on a wafer 1 led away by conductive path occurs, and then improve etch rate.
Particularly, insulating barrier 6 can be arranged on cover plate 2, also can be arranged on pallet 4, as long as pallet 4 and cover plate 2 insulation can be separated.Such as, can insulating barrier 6 be arranged on the upper surface of pallet 4, also can be arranged on the lower surface of cover plate 2.For the ease of the setting of insulating barrier 6, preferably, as shown in Figure 4 and Figure 5, insulating barrier 6 is arranged on the lower surface of cover plate 2.Such as, when insulating barrier 6 is for making the oxide of the metal of cover plate 2, insulating barrier can be obtained by carrying out oxidation processes to cover plate 2 towards the surface (that is, the lower surface in Fig. 4) of pallet 4.Or, can by the technique such as bonding, coating insulating barrier 6 is arranged on cover plate 2 towards on the surface of pallet 4.In addition, another beneficial effect be arranged on by insulating barrier 6 on the lower surface of cover plate 2 is, is convenient to cool pallet 4 and the wafer be arranged on pallet 4.
Further, cover plate 2 can be fixed on pallet 4 by securing member 3, and in order to reduce the formation of conductive path further, preferably, securing member 3 is insulator, to prevent cover plate 2 and pallet 4 conducting.As a kind of embodiment of the present invention, as shown in Figure 4, securing member 3 can be screw, and cover plate 2, insulating barrier 6 and pallet 4 arrange screwed hole, utilizes securing member 3 cover plate 2, insulating barrier 6 to be fixedly connected with pallet 4.
Usually, as shown in Figure 4, cover plate 2 can be provided with the through hole 5 running through cover plate 2 along cover plate 2 thickness direction, to be exposed by the upper surface of wafer 1.In order to prevent wafer position in etching process from offseting, preferably, fixture can be set on the inwall of through hole 5, when cover plate 2 is fixedly connected with pallet 4, fixture against on a wafer 1, for fixed wafer 1.
As shown in Figure 4, described pallet component also comprises the chuck 9 for support tray 4.In order to prevent the temperature of wafer 1 in etching process too high, position pallet 4 corresponding to through hole 5 can be provided with the first pore running through pallet 4 along pallet 4 thickness direction, chuck 9 can be provided with the second pore 10 running through chuck 9 along chuck 9 thickness direction, described first pore is communicated with the second pore 10 fluid, to pass into refrigerating gas bottom wafer 1, thus wafer 1 is cooled.Herein, refrigerating gas can be inert gas, such as, and helium.The quantity of described first pore and the second pore 10 is not restricted herein.Such as, by described first pore and described through hole 5 one_to_one corresponding, corresponding multiple first pore of each through hole 5 can also can be made.Second pore 10 can be set, multiple second pore 10 also can be set.It is easily understood that the aperture of the first pore is less than the aperture of the through hole 5 on cover plate 2.
In order to the refrigerating gas preventing from passing in bottom wafer 1 leaks, as shown in Figure 4, pallet 4 can also be provided with the first sealing ring 7, when wafer 1 is arranged on pallet 4, first sealing ring 7 can prevent the gas passed into by described first pore from overflowing in the space between described chuck and described wafer, thus ensures that wafer 1 can be cooled fully.
Usually, the first sealing ring 7 can be made up of elastomeric material, e.g., and heat resistant rubber etc.For the ease of the setting of the first sealing ring 7, preferably, pallet can be provided with the annular groove corresponding with the first sealing ring 7, the first sealing ring 7 is arranged in described annular groove.When cover plate 2 is placed on a wafer 1, wafer 1 is under pressure and extrudes the first sealing ring 7, wafer 1 is contacted with the upper surface of pallet 4, or make the lower surface of wafer 1 and the first sealing ring 7 form an airtight space, the refrigerating gas passed into by described first pore is gathered in the lower surface of wafer 1, avoids affecting the cooling effect to wafer 1 because of Leakage Gas under the sealing function of the first sealing ring 7.
Overflow to prevent the gas passed into described first pore by the second pore 10, preferably, as shown in Figure 4, chuck 9 can be provided with the second sealing ring 8, second sealing ring 8 is between pallet 4 and chuck 9, and extraneous refrigerating gas passes into the gap between pallet 4 and chuck 9 through the second pore 10, under the sealing function of the second sealing ring 8, overwhelming majority refrigerating gas can pass into bottom wafer 1 by described first pore, to cool wafer 1.
Further, as shown in Figure 4, described pallet component can also comprise pressure ring 11, and pressure ring 11 is arranged on the top of cover plate 2, cover plate 2 and pallet 4 to be fixed on chuck 9.In order to not hinder the carrying out of etching technics, pressure ring 11 is arranged on the edge of cover plate 2 usually.The present invention does not do concrete restriction to the concrete shape of pressure ring 11, and pressure ring 11 can be the ring-type corresponding with the edge of cover plate 2, can be the edge that multiple disjunct fixture is arranged on cover plate 2 yet.
In above-mentioned execution mode, insulating barrier 6 is provided with between cover plate 2 and pallet 4, in etching process, reduce the situation forming conductive path between cover plate 2, pallet 4, chuck 9 and pedestal 12 to occur, thus reduce the generation loading the situation that isoionic energy is on a wafer 1 led away by conductive path, and then improve etch rate.
As another aspect of the present invention, provide a kind of etching apparatus, comprise pallet component, wherein, described pallet component is above-mentioned pallet component provided by the present invention.
In the present invention, insulating barrier is provided with between described cover plate and pallet, cover plate can not be connected with pallet conductivity by the conductivity accessory substance therefore produced in etching process, thus reduce the possibility that the situation that forms conductive path between the pedestal of cover plate, pallet, chuck and ground connection occurs, reduce the generation being carried in the situation that the isoionic energy on wafer is led away by conductive path thus, and then improve etch rate.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (9)
1. a pallet component, comprise the pallet of cover plate and supporting wafers, described cover plate is removably disposed in above described pallet, to be fixed between described pallet and described cover plate by described wafer, it is characterized in that, between described cover plate and described pallet, be provided with insulating barrier.
2. pallet component according to claim 1, is characterized in that, described insulating barrier is arranged on the lower surface of described cover plate.
3. pallet component according to claim 1, is characterized in that, described cover plate is removably fixed on described pallet by securing member, and described securing member is made up of insulating material.
4. pallet component as claimed in any of claims 1 to 3, is characterized in that, described cover plate is provided with the through hole running through described cover plate along described cover sheet thickness direction, and described wafer can be arranged on the position described pallet corresponding to described through hole.
5. pallet component according to claim 4, it is characterized in that, described pallet component also comprises the chuck for supporting described pallet, the position described pallet corresponding to described through hole is provided with the first pore running through described pallet along described pallet thickness direction, described chuck is provided with the second pore running through described chuck along described chuck thickness direction, described first pore is communicated with described second pore fluid.
6. pallet component according to claim 5, it is characterized in that, described pallet is also provided with the first sealing ring, when described wafer is arranged on described pallet, described first sealing ring can prevent the gas passed into by described first pore from overflowing in the space between described pallet and described wafer.
7. pallet component according to claim 5, is characterized in that, described pallet component also comprises the second sealing ring, and described second sealing ring is between described pallet and described chuck.
8. pallet component as claimed in any of claims 1 to 3, is characterized in that, described pallet component also comprises pressure ring, and described pressure ring is arranged on the top of described cover plate, described cover plate and described pallet to be fixed on described chuck.
9. an etching apparatus, comprises pallet component, it is characterized in that, described pallet component is the pallet component in claim 1 to 8 described in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310742963.4A CN104752129B (en) | 2013-12-30 | 2013-12-30 | Pallet component and etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310742963.4A CN104752129B (en) | 2013-12-30 | 2013-12-30 | Pallet component and etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104752129A true CN104752129A (en) | 2015-07-01 |
| CN104752129B CN104752129B (en) | 2018-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310742963.4A Active CN104752129B (en) | 2013-12-30 | 2013-12-30 | Pallet component and etching apparatus |
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| CN (1) | CN104752129B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768299A (en) * | 2016-08-16 | 2018-03-06 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
| CN111863702A (en) * | 2020-07-30 | 2020-10-30 | 北京北方华创微电子装备有限公司 | Cover plate tray assembly and process chamber of semiconductor equipment |
| CN112133664A (en) * | 2020-09-25 | 2020-12-25 | 北京北方华创微电子装备有限公司 | Electrostatic chuck device and semiconductor processing equipment |
| CN112670143A (en) * | 2020-12-23 | 2021-04-16 | 北京北方华创微电子装备有限公司 | Semiconductor device and tray cover plate assembly thereof |
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| JPH10107130A (en) * | 1996-09-30 | 1998-04-24 | Kyocera Corp | Wafer holder |
| CN102067303A (en) * | 2009-02-18 | 2011-05-18 | 株式会社爱发科 | Wafer conveying tray and method of securing wafer on tray |
| CN202067787U (en) * | 2011-05-05 | 2011-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray component and substrate processing equipment comprising same |
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| CN103094037A (en) * | 2011-11-08 | 2013-05-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Holding device and plasma processing device using the same |
| CN103187348A (en) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer fixed device, semiconductor device and wafer fixed method |
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2013
- 2013-12-30 CN CN201310742963.4A patent/CN104752129B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH10107130A (en) * | 1996-09-30 | 1998-04-24 | Kyocera Corp | Wafer holder |
| CN102067303A (en) * | 2009-02-18 | 2011-05-18 | 株式会社爱发科 | Wafer conveying tray and method of securing wafer on tray |
| CN202067787U (en) * | 2011-05-05 | 2011-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray component and substrate processing equipment comprising same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768299A (en) * | 2016-08-16 | 2018-03-06 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
| CN111863702A (en) * | 2020-07-30 | 2020-10-30 | 北京北方华创微电子装备有限公司 | Cover plate tray assembly and process chamber of semiconductor equipment |
| CN111863702B (en) * | 2020-07-30 | 2024-07-23 | 北京北方华创微电子装备有限公司 | Cover plate tray assembly and process chamber of semiconductor device |
| CN112133664A (en) * | 2020-09-25 | 2020-12-25 | 北京北方华创微电子装备有限公司 | Electrostatic chuck device and semiconductor processing equipment |
| CN112133664B (en) * | 2020-09-25 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Electrostatic chuck device and semiconductor process equipment |
| CN112670143A (en) * | 2020-12-23 | 2021-04-16 | 北京北方华创微电子装备有限公司 | Semiconductor device and tray cover plate assembly thereof |
| CN112670143B (en) * | 2020-12-23 | 2024-04-12 | 北京北方华创微电子装备有限公司 | Semiconductor device and tray cover plate assembly thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104752129B (en) | 2018-01-19 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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