CN104752129B - Pallet component and etching apparatus - Google Patents

Pallet component and etching apparatus Download PDF

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Publication number
CN104752129B
CN104752129B CN201310742963.4A CN201310742963A CN104752129B CN 104752129 B CN104752129 B CN 104752129B CN 201310742963 A CN201310742963 A CN 201310742963A CN 104752129 B CN104752129 B CN 104752129B
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China
Prior art keywords
pallet
cover plate
chip
chuck
stomata
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CN201310742963.4A
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Chinese (zh)
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CN104752129A (en
Inventor
张君
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Priority to CN201310742963.4A priority Critical patent/CN104752129B/en
Publication of CN104752129A publication Critical patent/CN104752129A/en
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  • Drying Of Semiconductors (AREA)

Abstract

The present invention provides a kind of pallet component, including the pallet of cover plate and support chip, and the cover plate is arranged on above the pallet, the chip is fixed between the pallet and the cover plate, wherein, it is provided with insulating barrier between the cover plate and the pallet.The present invention also provides a kind of etching apparatus for including the pallet component.In the present invention, insulating barrier is provided between the cover plate and the pallet, therefore caused electric conductivity accessory substance will not connect cover plate with pallet electric conductivity in etching process, so as to reduce the possibility that the situation of conductive path is formed between cover plate, pallet, chuck and the pedestal of ground connection and is occurred, thus reduce the energy of plasma that is carried on chip by conductive path guide the occurrence of, and then improve etch rate.

Description

Pallet component and etching apparatus
Technical field
The present invention relates to microelectronics technology, in particular it relates to which a kind of pallet component and one kind include the pallet component Etching apparatus.
Background technology
Patterned substrate(PSS, Patterned Sapphire Substrates)Technology is to grow on a sapphire substrate Dry etching mask, mask is carved into figure with the photoetching process of standard, utilizes semiconductor coupling plasma(ICP, Inductively Coupled Plasma)Lithographic technique etches sapphire, and removes mask, then GaN is grown thereon(Nitridation Gallium)Material, longitudinal extension of GaN material is set to be changed into horizontal extension.The dislocation that this method can effectively reduce GaN epitaxy material is close Degree, so as to reduce the non-radiative recombination of active area, reduces reverse leakage current, improves the life-span of light emitting diode.It is active The light that area is sent, via GaN and Sapphire Substrate interface Multiple Scattering, the angle of emergence of total reflection light is changed, so as to improve The extraction efficiency of light.
Shown in Fig. 1 and Fig. 2 is the vertical view of pallet and cover plate in currently used patterned substrate etching apparatus respectively Figure and main sectional view.As shown in Figures 2 and 3, pallet 4 is arranged on chuck 9, and chuck 9 passes through the pedestal of conduction(Generally by gold Category aluminium is made)12 are fixedly installed in the etching cavity of etching apparatus.Before etching starts, chip 1 is arranged on pallet 4, so It is arranged on pallet 4 by cover plate 2, and cover plate 2 is fixed on pallet 4 afterwards with fastener.It is logical due to being provided with cover plate 2 Hole, therefore the chip 1 being arranged on pallet 4 can be exposed.In etching process, plasma attack chip, meeting simultaneously Produce conductive accessory substance(For example, B, C, O, Cl accessory substance), the accessory substance is attached to cover plate 2, pallet 4, chuck 9 And on pedestal 12.As shown in figure 3, due to chuck 9 be grounded pedestal 12 be connected, thus conduction accessory substance can by pallet, Conductive path is formed between cover plate, chuck and pedestal and ground so that the plasma part energy warp being deposited on chip Conductive path walking guide is crossed, causes the plasma energy for acting on chip to reduce, so as to reduce etch rate.
Therefore, how to prevent when performing etching technique, formed between the pallet of etching apparatus, cover plate, chuck and pedestal Conductive path turns into this area technical problem urgently to be resolved hurrily.
The content of the invention
It is an object of the invention to provide it is a kind of can prevent between cover plate and pallet produce conductive path pallet component, A kind of and etching apparatus for including the pallet component.
To achieve these goals, as one aspect of the present invention, there is provided a kind of pallet component, the pallet component include The pallet of cover plate and support chip, the cover plate are removably disposed in above the pallet, and the chip is fixed on into institute State between pallet and the cover plate, wherein, it is provided with insulating barrier between the cover plate and the pallet.
Preferably, the insulating barrier is arranged on the lower surface of the cover plate.
Preferably, the cover plate is removably attached on the pallet by fastener, and the fastener is by insulation material Material is made.
Preferably, the through hole for running through the cover plate along the cover sheet thickness direction is provided with cover plate, the chip can It is arranged on the position for corresponding to the through hole on the pallet.
Preferably, the pallet component also includes being used for the chuck for supporting the pallet, corresponds on the pallet described The opening position of through hole is provided with the first stomata for running through the pallet along the pallet thickness direction, and edge is provided with the chuck The second stomata of the chuck is run through in the chuck thickness direction, and first stomata is in fluid communication with second stomata.
Preferably, the first sealing ring is additionally provided with the pallet, it is described when the chip is arranged on the pallet The gas that first sealing ring can prevent from being passed through by first stomata is in the space between the pallet and the chip Effusion.Preferably, the pallet component also includes the second sealing ring, and second sealing ring is located at the pallet and the chuck Between.
Preferably, the pallet component also includes pressure ring, and the pressure ring is arranged on the top of the cover plate, by the lid Plate and the pallet are fixed on the chuck.
As another aspect of the present invention, there is provided a kind of etching apparatus, the etching apparatus include pallet component, wherein, institute It is above-mentioned pallet component provided by the present invention to state pallet component.
In the present invention, insulating barrier is provided between the cover plate and the pallet, therefore caused by etching process Electric conductivity accessory substance will not connect cover plate with pallet electric conductivity, so as to reduce cover plate, pallet, chuck and the pedestal of ground connection it Between form the possibility that the situation of conductive path occurs, thus reduce be carried in plasma on chip energy pass through it is conductive logical Road guide the occurrence of, and then improve etch rate.
Brief description of the drawings
Accompanying drawing is for providing a further understanding of the present invention, and a part for constitution instruction, with following tool Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the top view of pallet and cover plate in the prior art;
Fig. 2 cuts open schematic diagram for the A-A master of pallet and cover plate in the prior art;
Fig. 3 is the position relationship schematic diagram of pallet, cover plate, chuck and pedestal in the prior art;
Fig. 4 is that the master of pallet component in the present invention cuts open schematic diagram;
Fig. 5 is the close-up schematic view of the pallet component in Fig. 4.
Description of reference numerals
1:Chip;2:Cover plate;3:Fastener;4:Pallet;5:Through hole;6:Insulating barrier;7:First sealing ring;8:Second sealing Circle;9:Chuck;10:Second stomata;11:Pressure ring;12:Pedestal.
Embodiment
The embodiment of the present invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched The embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
As an aspect of of the present present invention, as shown in Figure 4, there is provided a kind of pallet component, including cover plate 2 and support chip 1 Pallet 4, cover plate 2 are removably disposed in the top of pallet 4, chip 1 are fixed between pallet 4 and cover plate 2, wherein, cover plate 2 Insulating barrier 6 is provided between pallet 4.
It is understood that cover plate 2 can be made up of metals such as aluminium.In the present invention, to the specific composition of insulating barrier 6 not Limit, the oxide or other electron opaque materials of the metal of the cover plate can be formed into.The pallet component is also Chuck 9 including supporting pallet 4, chuck 9 are arranged on the pedestal 12 of ground connection.Although insulating barrier 6 is arranged on cover plate 2 and pallet 4 Between, still, the insulating barrier 6 should not block chip 1, i.e. insulating barrier 6 should not hinder the progress of normal etching technics.
In the present invention, insulating barrier 6 is provided between cover plate 2 and pallet 4, even if caused electric conductivity in etching process Accessory substance is attached to the surface of cover plate 2, pallet 4 and pedestal 12, and insulating barrier 6 can also block leading between cover plate 2 and pallet 4 Electric pathway, reduce situation about being turned between chip 1, cover plate 2 and the three of pallet 4 and occur, so as to be grounded by the pedestal, Occur so that reducing the situation that the charged particle in the plasma of loading on a wafer 1 is guided by conductive path, Jin Erti High etch rate.
Specifically, insulating barrier 6 can be arranged on cover plate 2, can also be arranged on pallet 4, as long as can be by the He of pallet 4 The insulation of cover plate 2 separates.For example, insulating barrier 6 can be set on the upper surface of pallet 4, can also be arranged under cover plate 2 On surface.For the ease of the setting of insulating barrier 6, it is preferable that as shown in Figure 4 and Figure 5, insulating barrier 6 is arranged on to the following table of cover plate 2 Face.For example, when insulating barrier 6 is the oxide for the metal that cover plate 2 is made, can by cover plate 2 towards the surface of pallet 4 (That is, the lower surface in Fig. 4)Carry out oxidation processes and obtain insulating barrier.Or can be by techniques such as bonding, coatings by insulating barrier 6 be arranged on cover plate 2 towards on the surface of pallet 4.In addition, another insulating barrier 6 being arranged on the lower surface of cover plate 2 has Beneficial effect is, is easy to cool down pallet 4 and the chip being arranged on pallet 4.
Further, cover plate 2 can be fixed on pallet 4 by fastener 3, in order to further reduce conductive path Formed, it is preferable that fastener 3 is insulator, to prevent cover plate 2 from being turned on pallet 4.A kind of specific embodiment party as the present invention Formula, as shown in figure 4, fastener 3 can be screw, hole is threaded on cover plate 2, insulating barrier 6 and pallet 4, utilizes fastener 3 Cover plate 2, insulating barrier 6 are fixedly connected with pallet 4.
Generally, will as shown in figure 4, the through hole 5 for running through cover plate 2 along the thickness direction of cover plate 2 can be provided with cover plate 2 Expose the upper surface of chip 1.In order to prevent that wafer position shifts in etching process, it is preferable that can be in through hole 5 Fixture is set on wall, and when cover plate 2 is fixedly connected with pallet 4, fixture is against on a wafer 1, for fixed wafer 1.
As shown in figure 4, the pallet component also includes being used for the chuck 9 for supporting pallet 4.In order to prevent in etching process The temperature of chip 1 is too high, and the opening position on pallet 4 corresponding to through hole 5, which can be provided with along the thickness direction of pallet 4, runs through pallet 4 The first stomata, the second stomata 10 for running through chuck 9 along the thickness direction of chuck 9, first stomata can be provided with chuck 9 It is in fluid communication with the second stomata 10, to be passed through cooling gas to the bottom of chip 1, so as to be cooled down to chip 1.Herein, cool down Gas can be inert gas, for example, helium.The quantity of first stomata and the second stomata 10 is not restricted herein. For example, first stomata and the through hole 5 can be corresponded, it is also possible that corresponding multiple first gas of each through hole 5 Hole.One the second stomata 10 can be set, multiple second stomatas 10 can also be set.It is easily understood that the hole of the first stomata Footpath is less than the aperture of the through hole 5 on cover plate 2.
In order to prevent the cooling gas that is passed through in the bottom of chip 1 from leaking, as shown in figure 4, being also provided with the on pallet 4 One sealing ring 7, when chip 1 is arranged on pallet 4, the first sealing ring 7 can prevent the gas being passed through by first stomata Body escapes in the space between the chuck and the chip, so as to ensure that chip 1 can be adequately cooled.
Generally, the first sealing ring 7 can be made up of elastomeric material, e.g., heat resistant rubber etc..For the ease of the first sealing ring 7 Setting, it is preferable that can be provided with pallet with 7 corresponding annular groove of the first sealing ring, the first sealing ring 7 is arranged on In the annular groove.When cover plate 2 is placed on a wafer 1, chip 1 is under pressure and extrudes the first sealing ring 7 so that chip 1 with the upper surface of pallet 4, or cause the lower surface of chip 1 and the first sealing ring 7 to form a closed space, by The cooling gas that first stomata is passed through is gathered in the lower surface of chip 1, avoided under the sealing function of the first sealing ring 7 because Gas leaks and influences the cooling effect to chip 1.
In order to prevent the gas being passed through from the second stomata 10 to first stomata from escaping, it is preferable that as shown in figure 4, card The second sealing ring 8 can be provided with disk 9, the second sealing ring 8 is between pallet 4 and chuck 9, and extraneous cooling gas is by the Two stomatas 10 are passed through the gap between pallet 4 and chuck 9, under the sealing function of the second sealing ring 8, most cooling gas The bottom of chip 1 can be passed through by first stomata, to be cooled down to chip 1.
Further, as shown in figure 4, the pallet component can also include pressure ring 11, pressure ring 11 is arranged on cover plate 2 Top, cover plate 2 and pallet 4 are fixed on chuck 9.For the progress without prejudice to etching technics, pressure ring 11 is generally arranged at The edge of cover plate 2.The present invention is not especially limited to the concrete shape of pressure ring 11, and pressure ring 11 can be the edge phase with cover plate 2 Corresponding ring-type, or multiple disjunct fixtures are arranged on the edge of cover plate 2.
In above-mentioned embodiment, insulating barrier 6 is provided between cover plate 2 and pallet 4, in etching process, reduction cover plate 2, The situation that conductive path is formed between pallet 4, chuck 9 and pedestal 12 occurs, so as to reduce the plasma of loading on a wafer 1 Energy by conductive path guide the occurrence of, and then improve etch rate.
As another aspect of the present invention, there is provided a kind of etching apparatus, including pallet component, wherein, the pallet component For above-mentioned pallet component provided by the present invention.
In the present invention, insulating barrier, therefore the caused conduction in etching process are provided between the cover plate and pallet Property accessory substance will not connect cover plate with pallet electric conductivity, so as to reduce shape between cover plate, pallet, chuck and the pedestal of ground connection The possibility occurred into the situation of conductive path, the energy for thus reducing the plasma being carried on chip are led by conductive path Walk the occurrence of, and then improve etch rate.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.

Claims (8)

1. a kind of pallet component, including the pallet of cover plate and support chip, the cover plate are removably disposed on the pallet Side, the chip is fixed between the pallet and the cover plate, it is characterised in that between the cover plate and the pallet Be provided with insulating barrier, the insulating barrier is arranged on the lower surface of the cover plate, the insulating barrier be used for block the cover plate with Conductive path between the pallet.
2. pallet component according to claim 1, it is characterised in that the cover plate is removably attached to by fastener On the pallet, the fastener is made up of insulating materials.
3. pallet component as claimed in any of claims 1 to 2, it is characterised in that be provided with edge on the cover plate The through hole of the cover plate is run through in the cover sheet thickness direction, and the chip, which can be arranged on the pallet, corresponds to the through hole Position.
4. pallet component according to claim 3, it is characterised in that the pallet component also includes being used to support the support The chuck of disk, the opening position that the through hole is corresponded on the pallet are provided with along the pallet thickness direction and run through the pallet The first stomata, be provided with the second stomata for running through the chuck along the chuck thickness direction on the chuck, described first Stomata is in fluid communication with second stomata.
5. pallet component according to claim 4, it is characterised in that the first sealing ring is additionally provided with the pallet, when When the chip is arranged on the pallet, first sealing ring can prevent by the gas that first stomata is passed through from Escaped in space between the pallet and the chip.
6. pallet component according to claim 4, it is characterised in that the pallet component also includes the second sealing ring, institute The second sealing ring is stated between the pallet and the chuck.
7. pallet component according to claim 4, it is characterised in that the pallet component also includes pressure ring, the pressure ring The top of the cover plate is arranged on, the cover plate and the pallet are fixed on the chuck.
8. a kind of etching apparatus, including pallet component, it is characterised in that the pallet component is any one in claim 1 to 7 Pallet component described in.
CN201310742963.4A 2013-12-30 2013-12-30 Pallet component and etching apparatus Active CN104752129B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310742963.4A CN104752129B (en) 2013-12-30 2013-12-30 Pallet component and etching apparatus

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Application Number Priority Date Filing Date Title
CN201310742963.4A CN104752129B (en) 2013-12-30 2013-12-30 Pallet component and etching apparatus

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CN104752129A CN104752129A (en) 2015-07-01
CN104752129B true CN104752129B (en) 2018-01-19

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CN107768299A (en) * 2016-08-16 2018-03-06 北京北方华创微电子装备有限公司 Bogey and semiconductor processing equipment
CN111863702A (en) * 2020-07-30 2020-10-30 北京北方华创微电子装备有限公司 Cover plate tray assembly and process chamber of semiconductor equipment
CN112133664B (en) * 2020-09-25 2024-03-26 北京北方华创微电子装备有限公司 Electrostatic chuck device and semiconductor process equipment
CN112670143B (en) * 2020-12-23 2024-04-12 北京北方华创微电子装备有限公司 Semiconductor device and tray cover plate assembly thereof

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CN202067787U (en) * 2011-05-05 2011-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 Tray component and substrate processing equipment comprising same
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