CN104752129B - Pallet component and etching apparatus - Google Patents
Pallet component and etching apparatus Download PDFInfo
- Publication number
- CN104752129B CN104752129B CN201310742963.4A CN201310742963A CN104752129B CN 104752129 B CN104752129 B CN 104752129B CN 201310742963 A CN201310742963 A CN 201310742963A CN 104752129 B CN104752129 B CN 104752129B
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- pallet
- cover plate
- chip
- chuck
- stomata
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- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of pallet component, including the pallet of cover plate and support chip, and the cover plate is arranged on above the pallet, the chip is fixed between the pallet and the cover plate, wherein, it is provided with insulating barrier between the cover plate and the pallet.The present invention also provides a kind of etching apparatus for including the pallet component.In the present invention, insulating barrier is provided between the cover plate and the pallet, therefore caused electric conductivity accessory substance will not connect cover plate with pallet electric conductivity in etching process, so as to reduce the possibility that the situation of conductive path is formed between cover plate, pallet, chuck and the pedestal of ground connection and is occurred, thus reduce the energy of plasma that is carried on chip by conductive path guide the occurrence of, and then improve etch rate.
Description
Technical field
The present invention relates to microelectronics technology, in particular it relates to which a kind of pallet component and one kind include the pallet component
Etching apparatus.
Background technology
Patterned substrate(PSS, Patterned Sapphire Substrates)Technology is to grow on a sapphire substrate
Dry etching mask, mask is carved into figure with the photoetching process of standard, utilizes semiconductor coupling plasma(ICP,
Inductively Coupled Plasma)Lithographic technique etches sapphire, and removes mask, then GaN is grown thereon(Nitridation
Gallium)Material, longitudinal extension of GaN material is set to be changed into horizontal extension.The dislocation that this method can effectively reduce GaN epitaxy material is close
Degree, so as to reduce the non-radiative recombination of active area, reduces reverse leakage current, improves the life-span of light emitting diode.It is active
The light that area is sent, via GaN and Sapphire Substrate interface Multiple Scattering, the angle of emergence of total reflection light is changed, so as to improve
The extraction efficiency of light.
Shown in Fig. 1 and Fig. 2 is the vertical view of pallet and cover plate in currently used patterned substrate etching apparatus respectively
Figure and main sectional view.As shown in Figures 2 and 3, pallet 4 is arranged on chuck 9, and chuck 9 passes through the pedestal of conduction(Generally by gold
Category aluminium is made)12 are fixedly installed in the etching cavity of etching apparatus.Before etching starts, chip 1 is arranged on pallet 4, so
It is arranged on pallet 4 by cover plate 2, and cover plate 2 is fixed on pallet 4 afterwards with fastener.It is logical due to being provided with cover plate 2
Hole, therefore the chip 1 being arranged on pallet 4 can be exposed.In etching process, plasma attack chip, meeting simultaneously
Produce conductive accessory substance(For example, B, C, O, Cl accessory substance), the accessory substance is attached to cover plate 2, pallet 4, chuck 9
And on pedestal 12.As shown in figure 3, due to chuck 9 be grounded pedestal 12 be connected, thus conduction accessory substance can by pallet,
Conductive path is formed between cover plate, chuck and pedestal and ground so that the plasma part energy warp being deposited on chip
Conductive path walking guide is crossed, causes the plasma energy for acting on chip to reduce, so as to reduce etch rate.
Therefore, how to prevent when performing etching technique, formed between the pallet of etching apparatus, cover plate, chuck and pedestal
Conductive path turns into this area technical problem urgently to be resolved hurrily.
The content of the invention
It is an object of the invention to provide it is a kind of can prevent between cover plate and pallet produce conductive path pallet component,
A kind of and etching apparatus for including the pallet component.
To achieve these goals, as one aspect of the present invention, there is provided a kind of pallet component, the pallet component include
The pallet of cover plate and support chip, the cover plate are removably disposed in above the pallet, and the chip is fixed on into institute
State between pallet and the cover plate, wherein, it is provided with insulating barrier between the cover plate and the pallet.
Preferably, the insulating barrier is arranged on the lower surface of the cover plate.
Preferably, the cover plate is removably attached on the pallet by fastener, and the fastener is by insulation material
Material is made.
Preferably, the through hole for running through the cover plate along the cover sheet thickness direction is provided with cover plate, the chip can
It is arranged on the position for corresponding to the through hole on the pallet.
Preferably, the pallet component also includes being used for the chuck for supporting the pallet, corresponds on the pallet described
The opening position of through hole is provided with the first stomata for running through the pallet along the pallet thickness direction, and edge is provided with the chuck
The second stomata of the chuck is run through in the chuck thickness direction, and first stomata is in fluid communication with second stomata.
Preferably, the first sealing ring is additionally provided with the pallet, it is described when the chip is arranged on the pallet
The gas that first sealing ring can prevent from being passed through by first stomata is in the space between the pallet and the chip
Effusion.Preferably, the pallet component also includes the second sealing ring, and second sealing ring is located at the pallet and the chuck
Between.
Preferably, the pallet component also includes pressure ring, and the pressure ring is arranged on the top of the cover plate, by the lid
Plate and the pallet are fixed on the chuck.
As another aspect of the present invention, there is provided a kind of etching apparatus, the etching apparatus include pallet component, wherein, institute
It is above-mentioned pallet component provided by the present invention to state pallet component.
In the present invention, insulating barrier is provided between the cover plate and the pallet, therefore caused by etching process
Electric conductivity accessory substance will not connect cover plate with pallet electric conductivity, so as to reduce cover plate, pallet, chuck and the pedestal of ground connection it
Between form the possibility that the situation of conductive path occurs, thus reduce be carried in plasma on chip energy pass through it is conductive logical
Road guide the occurrence of, and then improve etch rate.
Brief description of the drawings
Accompanying drawing is for providing a further understanding of the present invention, and a part for constitution instruction, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the top view of pallet and cover plate in the prior art;
Fig. 2 cuts open schematic diagram for the A-A master of pallet and cover plate in the prior art;
Fig. 3 is the position relationship schematic diagram of pallet, cover plate, chuck and pedestal in the prior art;
Fig. 4 is that the master of pallet component in the present invention cuts open schematic diagram;
Fig. 5 is the close-up schematic view of the pallet component in Fig. 4.
Description of reference numerals
1:Chip;2:Cover plate;3:Fastener;4:Pallet;5:Through hole;6:Insulating barrier;7:First sealing ring;8:Second sealing
Circle;9:Chuck;10:Second stomata;11:Pressure ring;12:Pedestal.
Embodiment
The embodiment of the present invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
As an aspect of of the present present invention, as shown in Figure 4, there is provided a kind of pallet component, including cover plate 2 and support chip 1
Pallet 4, cover plate 2 are removably disposed in the top of pallet 4, chip 1 are fixed between pallet 4 and cover plate 2, wherein, cover plate 2
Insulating barrier 6 is provided between pallet 4.
It is understood that cover plate 2 can be made up of metals such as aluminium.In the present invention, to the specific composition of insulating barrier 6 not
Limit, the oxide or other electron opaque materials of the metal of the cover plate can be formed into.The pallet component is also
Chuck 9 including supporting pallet 4, chuck 9 are arranged on the pedestal 12 of ground connection.Although insulating barrier 6 is arranged on cover plate 2 and pallet 4
Between, still, the insulating barrier 6 should not block chip 1, i.e. insulating barrier 6 should not hinder the progress of normal etching technics.
In the present invention, insulating barrier 6 is provided between cover plate 2 and pallet 4, even if caused electric conductivity in etching process
Accessory substance is attached to the surface of cover plate 2, pallet 4 and pedestal 12, and insulating barrier 6 can also block leading between cover plate 2 and pallet 4
Electric pathway, reduce situation about being turned between chip 1, cover plate 2 and the three of pallet 4 and occur, so as to be grounded by the pedestal,
Occur so that reducing the situation that the charged particle in the plasma of loading on a wafer 1 is guided by conductive path, Jin Erti
High etch rate.
Specifically, insulating barrier 6 can be arranged on cover plate 2, can also be arranged on pallet 4, as long as can be by the He of pallet 4
The insulation of cover plate 2 separates.For example, insulating barrier 6 can be set on the upper surface of pallet 4, can also be arranged under cover plate 2
On surface.For the ease of the setting of insulating barrier 6, it is preferable that as shown in Figure 4 and Figure 5, insulating barrier 6 is arranged on to the following table of cover plate 2
Face.For example, when insulating barrier 6 is the oxide for the metal that cover plate 2 is made, can by cover plate 2 towards the surface of pallet 4
(That is, the lower surface in Fig. 4)Carry out oxidation processes and obtain insulating barrier.Or can be by techniques such as bonding, coatings by insulating barrier
6 be arranged on cover plate 2 towards on the surface of pallet 4.In addition, another insulating barrier 6 being arranged on the lower surface of cover plate 2 has
Beneficial effect is, is easy to cool down pallet 4 and the chip being arranged on pallet 4.
Further, cover plate 2 can be fixed on pallet 4 by fastener 3, in order to further reduce conductive path
Formed, it is preferable that fastener 3 is insulator, to prevent cover plate 2 from being turned on pallet 4.A kind of specific embodiment party as the present invention
Formula, as shown in figure 4, fastener 3 can be screw, hole is threaded on cover plate 2, insulating barrier 6 and pallet 4, utilizes fastener 3
Cover plate 2, insulating barrier 6 are fixedly connected with pallet 4.
Generally, will as shown in figure 4, the through hole 5 for running through cover plate 2 along the thickness direction of cover plate 2 can be provided with cover plate 2
Expose the upper surface of chip 1.In order to prevent that wafer position shifts in etching process, it is preferable that can be in through hole 5
Fixture is set on wall, and when cover plate 2 is fixedly connected with pallet 4, fixture is against on a wafer 1, for fixed wafer 1.
As shown in figure 4, the pallet component also includes being used for the chuck 9 for supporting pallet 4.In order to prevent in etching process
The temperature of chip 1 is too high, and the opening position on pallet 4 corresponding to through hole 5, which can be provided with along the thickness direction of pallet 4, runs through pallet 4
The first stomata, the second stomata 10 for running through chuck 9 along the thickness direction of chuck 9, first stomata can be provided with chuck 9
It is in fluid communication with the second stomata 10, to be passed through cooling gas to the bottom of chip 1, so as to be cooled down to chip 1.Herein, cool down
Gas can be inert gas, for example, helium.The quantity of first stomata and the second stomata 10 is not restricted herein.
For example, first stomata and the through hole 5 can be corresponded, it is also possible that corresponding multiple first gas of each through hole 5
Hole.One the second stomata 10 can be set, multiple second stomatas 10 can also be set.It is easily understood that the hole of the first stomata
Footpath is less than the aperture of the through hole 5 on cover plate 2.
In order to prevent the cooling gas that is passed through in the bottom of chip 1 from leaking, as shown in figure 4, being also provided with the on pallet 4
One sealing ring 7, when chip 1 is arranged on pallet 4, the first sealing ring 7 can prevent the gas being passed through by first stomata
Body escapes in the space between the chuck and the chip, so as to ensure that chip 1 can be adequately cooled.
Generally, the first sealing ring 7 can be made up of elastomeric material, e.g., heat resistant rubber etc..For the ease of the first sealing ring 7
Setting, it is preferable that can be provided with pallet with 7 corresponding annular groove of the first sealing ring, the first sealing ring 7 is arranged on
In the annular groove.When cover plate 2 is placed on a wafer 1, chip 1 is under pressure and extrudes the first sealing ring 7 so that chip
1 with the upper surface of pallet 4, or cause the lower surface of chip 1 and the first sealing ring 7 to form a closed space, by
The cooling gas that first stomata is passed through is gathered in the lower surface of chip 1, avoided under the sealing function of the first sealing ring 7 because
Gas leaks and influences the cooling effect to chip 1.
In order to prevent the gas being passed through from the second stomata 10 to first stomata from escaping, it is preferable that as shown in figure 4, card
The second sealing ring 8 can be provided with disk 9, the second sealing ring 8 is between pallet 4 and chuck 9, and extraneous cooling gas is by the
Two stomatas 10 are passed through the gap between pallet 4 and chuck 9, under the sealing function of the second sealing ring 8, most cooling gas
The bottom of chip 1 can be passed through by first stomata, to be cooled down to chip 1.
Further, as shown in figure 4, the pallet component can also include pressure ring 11, pressure ring 11 is arranged on cover plate 2
Top, cover plate 2 and pallet 4 are fixed on chuck 9.For the progress without prejudice to etching technics, pressure ring 11 is generally arranged at
The edge of cover plate 2.The present invention is not especially limited to the concrete shape of pressure ring 11, and pressure ring 11 can be the edge phase with cover plate 2
Corresponding ring-type, or multiple disjunct fixtures are arranged on the edge of cover plate 2.
In above-mentioned embodiment, insulating barrier 6 is provided between cover plate 2 and pallet 4, in etching process, reduction cover plate 2,
The situation that conductive path is formed between pallet 4, chuck 9 and pedestal 12 occurs, so as to reduce the plasma of loading on a wafer 1
Energy by conductive path guide the occurrence of, and then improve etch rate.
As another aspect of the present invention, there is provided a kind of etching apparatus, including pallet component, wherein, the pallet component
For above-mentioned pallet component provided by the present invention.
In the present invention, insulating barrier, therefore the caused conduction in etching process are provided between the cover plate and pallet
Property accessory substance will not connect cover plate with pallet electric conductivity, so as to reduce shape between cover plate, pallet, chuck and the pedestal of ground connection
The possibility occurred into the situation of conductive path, the energy for thus reducing the plasma being carried on chip are led by conductive path
Walk the occurrence of, and then improve etch rate.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (8)
1. a kind of pallet component, including the pallet of cover plate and support chip, the cover plate are removably disposed on the pallet
Side, the chip is fixed between the pallet and the cover plate, it is characterised in that between the cover plate and the pallet
Be provided with insulating barrier, the insulating barrier is arranged on the lower surface of the cover plate, the insulating barrier be used for block the cover plate with
Conductive path between the pallet.
2. pallet component according to claim 1, it is characterised in that the cover plate is removably attached to by fastener
On the pallet, the fastener is made up of insulating materials.
3. pallet component as claimed in any of claims 1 to 2, it is characterised in that be provided with edge on the cover plate
The through hole of the cover plate is run through in the cover sheet thickness direction, and the chip, which can be arranged on the pallet, corresponds to the through hole
Position.
4. pallet component according to claim 3, it is characterised in that the pallet component also includes being used to support the support
The chuck of disk, the opening position that the through hole is corresponded on the pallet are provided with along the pallet thickness direction and run through the pallet
The first stomata, be provided with the second stomata for running through the chuck along the chuck thickness direction on the chuck, described first
Stomata is in fluid communication with second stomata.
5. pallet component according to claim 4, it is characterised in that the first sealing ring is additionally provided with the pallet, when
When the chip is arranged on the pallet, first sealing ring can prevent by the gas that first stomata is passed through from
Escaped in space between the pallet and the chip.
6. pallet component according to claim 4, it is characterised in that the pallet component also includes the second sealing ring, institute
The second sealing ring is stated between the pallet and the chuck.
7. pallet component according to claim 4, it is characterised in that the pallet component also includes pressure ring, the pressure ring
The top of the cover plate is arranged on, the cover plate and the pallet are fixed on the chuck.
8. a kind of etching apparatus, including pallet component, it is characterised in that the pallet component is any one in claim 1 to 7
Pallet component described in.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310742963.4A CN104752129B (en) | 2013-12-30 | 2013-12-30 | Pallet component and etching apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310742963.4A CN104752129B (en) | 2013-12-30 | 2013-12-30 | Pallet component and etching apparatus |
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CN104752129A CN104752129A (en) | 2015-07-01 |
CN104752129B true CN104752129B (en) | 2018-01-19 |
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CN201310742963.4A Active CN104752129B (en) | 2013-12-30 | 2013-12-30 | Pallet component and etching apparatus |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107768299A (en) * | 2016-08-16 | 2018-03-06 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
CN111863702A (en) * | 2020-07-30 | 2020-10-30 | 北京北方华创微电子装备有限公司 | Cover plate tray assembly and process chamber of semiconductor equipment |
CN112133664B (en) * | 2020-09-25 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Electrostatic chuck device and semiconductor process equipment |
CN112670143B (en) * | 2020-12-23 | 2024-04-12 | 北京北方华创微电子装备有限公司 | Semiconductor device and tray cover plate assembly thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102067303A (en) * | 2009-02-18 | 2011-05-18 | 株式会社爱发科 | Wafer conveying tray and method of securing wafer on tray |
CN202067787U (en) * | 2011-05-05 | 2011-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray component and substrate processing equipment comprising same |
CN202268337U (en) * | 2011-09-20 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Loading device and plasma processing equipment with loading device |
CN103094037A (en) * | 2011-11-08 | 2013-05-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Holding device and plasma processing device using the same |
CN103187348A (en) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer fixed device, semiconductor device and wafer fixed method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10107130A (en) * | 1996-09-30 | 1998-04-24 | Kyocera Corp | Wafer holder |
-
2013
- 2013-12-30 CN CN201310742963.4A patent/CN104752129B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102067303A (en) * | 2009-02-18 | 2011-05-18 | 株式会社爱发科 | Wafer conveying tray and method of securing wafer on tray |
CN202067787U (en) * | 2011-05-05 | 2011-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray component and substrate processing equipment comprising same |
CN202268337U (en) * | 2011-09-20 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Loading device and plasma processing equipment with loading device |
CN103094037A (en) * | 2011-11-08 | 2013-05-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Holding device and plasma processing device using the same |
CN103187348A (en) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer fixed device, semiconductor device and wafer fixed method |
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CN104752129A (en) | 2015-07-01 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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