CN110416049A - The CCP etching device and its method of adjustable edge radio frequency plasma distribution - Google Patents
The CCP etching device and its method of adjustable edge radio frequency plasma distribution Download PDFInfo
- Publication number
- CN110416049A CN110416049A CN201810400178.3A CN201810400178A CN110416049A CN 110416049 A CN110416049 A CN 110416049A CN 201810400178 A CN201810400178 A CN 201810400178A CN 110416049 A CN110416049 A CN 110416049A
- Authority
- CN
- China
- Prior art keywords
- radio frequency
- impedance
- lower electrode
- adjustment unit
- etching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a kind of CCP etching device of adjustable edge radio frequency plasma distribution, it includes: the top electrode being oppositely arranged and lower electrode；Radio frequency power source connects the lower electrode or top electrode；Bias power source connects the lower electrode；Edge electrodes, in a ring, setting are peripheral and concentric with lower electrode in the lower electrode；Impedance adjustment unit, one end connect edge electrodes, other end ground connection, to form a fringe RF current earthing access；Electrostatic chuck is arranged above the lower electrode；Dead ring is arranged in above the extension of the lower electrode periphery, and the edge electrodes are embedded in the dead ring.Its advantage is that: by configuring edge electrodes and impedance-matching device, to control radio frequency earth-return circuit impedance, realize the passive adjusting to edge RF coupling.
Description
Technical field
The present invention relates to the capacitance coupling plasma processing unit technical fields for processing semiconductor devices, specifically relate to
And a kind of the CCP etching device and its method of adjustable edge radio frequency plasma distribution.
Background technique
In CCP(Capacitively Coupled Plasma) capacitance coupling plasma etching in, due to base to be processed
The discontinuity of piece or wafer fringe RF electromagnetic field is easy to produce edge effect, and this edge effect is to edge technique
The geometric dimension and material of component are all very sensitive, for example, being close to surround the plasma focus ring (Focus Ring) of wafer
Due to plasma etching act on, size can with use the time increase and become smaller so that edge sheaths distribution also with
The time gradually change, cause etching effect to be deteriorated, for example, the inclination angle of etched hole or groove can become with the height of focusing ring
It is low and become larger, it thus will affect edge module service life, to increase consumable component use cost.
In order to improve edge effect and keep the stability of etching effect, a kind of approach is compensation due to etching size of components
The deformation of sheaths caused by changing.The prior art mostly uses the mode of active adjusting, i.e., by adding an electrode in edge ring, so
Radio frequency or DC voltage are entered by this feedthrough electrode afterwards come adjust edge sheaths distribution, as shown in Figure 1, in figure 100 ' for CCP etch
Device partial structural diagram, 101 ' be substrate to be processed, and 102 ' be electrostatic chuck, and 103 ' is normally grounded for top electrode, 104 '
It is that connect lower electrode 104 ', 106 ' be bias power source to radio frequency power source for lower electrode, 105 ', 107 ' be match circuit, 108 '
It is focusing ring for filter, 109 ', edge ring can also be due to being located at crystal round fringes, 110 ' be the insulating sleeve of isolation, this
The defect that sample is done be must increase in addition all the way power input (i.e. bias power source 106 ', match circuit 107 ' be, filter
108 ') it must be effectively isolated, and with the radio frequency power source 105 ' for being added in electrostatic chuck 102 ', increase cost and Project Realization
Complexity.
As shown in Fig. 2, being the structural schematic diagram of the common CCP etching device of existing another kind, using double frequency
Capacitor discharges radio frequency method, double frequency refer to for controlling plasma density radio-frequency power (by radio frequency power source HF generator and
Impedance matching unit HF matching network composition is high frequency in 40Mhz-200Mhz) and sheath thickness for controlling plasma
Degree and the bias power of Dc bias (are made of bias power source LF generator and impedance matching unit LF matching network, are low
Frequency is in 100kHZ-10MHZ), in figure, 201 ' be cavity, and 202 ' be shift(ing) ring, 203 ' for confinement ring for control reaction gas and
The discharge of its by-product neutralizes charged particle therein, so that plasma discharge is constrained in processing region substantially, 204 ' are
Spray head, 205 ' be substrate to be processed, and 206 ' be electrostatic chuck, and 207 ' be process kit, and 208 ' be dead ring, and 209 ' be covering
Ring avoids plasma from directly contacting with electrostatic chuck and causes current lead-through, to avoid electrostatic chuck for plasma to be isolated
Disk 206 ' is broken by plasma.Electrode structure in the CCP etching device is parallel pole, and high frequency is applied to by radio-frequency power
Under (on or) on electrode, be commonly applied on the bottom electrode, main the loop of rf is that electric current from lower electrode passes through plasma coupling
Top electrode is closed, is grounded by reaction cavity.Farther out from cavity wall due to electrode edge, so from electrode edge direct-coupling
To the radio-frequency current very little of cavity wall, in this way, the distribution of radio-frequency current is mainly by upper/lower electrode gap and big in plasma
Small control.The transverse current of very little can not effectively adjust crystal round fringes peripheral region (process kit 207 '/edge ring 109 ')
Radio-frequency power size.
Summary of the invention
The purpose of the present invention is to provide a kind of CCP etching device of adjustable edge radio frequency plasma distribution and its sides
Method, to control radio frequency earth-return circuit impedance, is realized to edge RF coupling by configuring edge electrodes and impedance-matching device
Passive adjusting.
In order to achieve the above object, the invention is realized by the following technical scheme:
A kind of CCP etching device of adjustable edge radio frequency plasma distribution, characterized in that include:
The top electrode being oppositely arranged and lower electrode；
Radio frequency power source connects the lower electrode or top electrode；
Bias power source connects the lower electrode；
Edge electrodes, in a ring, setting are peripheral and concentric with lower electrode in the lower electrode；
Impedance adjustment unit, one end connect edge electrodes, other end ground connection, to form a fringe RF current earthing access；
Electrostatic chuck is arranged above the lower electrode；
Dead ring is arranged in above the extension of the lower electrode periphery, and the edge electrodes are embedded in the dead ring.
The CCP etching device of above-mentioned adjustable edge radio frequency plasma distribution, wherein the impedance adjustment unit
Include:
Concatenated capacitor and inductance.
The CCP etching device of above-mentioned adjustable edge radio frequency plasma distribution, wherein also include:
Control unit connects capacitor and/or inductance in impedance adjustment unit, to adjust the impedance of impedance adjustment unit.
The CCP etching device of above-mentioned adjustable edge radio frequency plasma distribution, in which:
The capacitor and/or inductance is variable.
The CCP etching device of above-mentioned adjustable edge radio frequency plasma distribution, wherein also include:
Sensor is arranged in fringe RF current earthing access, to acquire radio frequency parameter.
The CCP etching device of above-mentioned adjustable edge radio frequency plasma distribution, wherein also include:
Control unit connects impedance adjustment unit and sensor, to monitor the variation of radio frequency parameter and according to situation of change pair
The impedance of impedance adjustment unit carries out on-line control.
The CCP etching device of above-mentioned adjustable edge radio frequency plasma distribution, in which:
The electrostatic chuck further includes that a process kit is located above dead ring for fixing wafer to be etched, the work
Skill external member is around the wafer, and wherein the inner sidewall diameter of edge electrodes is more than or equal to the outside diameter of the process kit.
A kind of method of adjustable edge radio frequency plasma distribution, is realized using above-mentioned CCP etching device, special
Sign is:
Radio frequency power source and bias power source are applied on the lower electrode simultaneously；
The impedance of impedance adjustment unit is adjusted as needed, to adjust fringe RF coupling, and then it is uniform to reach etching
Property adjust purpose.
The method of above-mentioned adjustable edge radio frequency plasma distribution, in which:
The impedance adjustment unit includes concatenated capacitor and inductance；
The impedance adjusting method of the impedance adjustment unit is:
Capacitance and inductance value are adjusted, the first inductance value is selected to cooperate the first variable capacitance, to realize to high frequency
The high impedance of 40MHz-200MHz and adjusting to low frequency 100kHz-10MHz impedance；
Capacitance and inductance value are adjusted, the second inductance value is selected to cooperate the second variable capacitance, to realize to low frequency
The high impedance of 100kHz-10MHz and adjusting to high frequency 40MHz-200MHz impedance.
Compared with the prior art, the present invention has the following advantages: by configuring edge electrodes and impedance-matching device, with
The impedance of radio frequency earth-return circuit is controlled, realizes the passive adjusting to edge RF coupling, reduce additional supply, radio frequency input and is penetrated
The use of frequency isolating device simplifies cavity design and reduces hardware cost.
Detailed description of the invention
Fig. 1 is a kind of CCP etching device partial structural diagram of the prior art；
Fig. 2 is the structural schematic diagram of another CCP etching device of the prior art；
Fig. 3 is the structural schematic diagram of the CCP etching device of one embodiment of the invention；
Fig. 4 is the structural schematic diagram of the CCP etching device of another embodiment of the present invention；
Fig. 5 is the equivalent radio frequency loop diagram of the impedance adjustment unit of CCP etching device in the embodiment of the present invention；
Fig. 6 be the embodiment of the present invention in CCP etching device adjust edge low frequency impedance ground in the case of capacitance size with
The curve relation figure of RF impedance；
Fig. 7 be the embodiment of the present invention in CCP etching device adjust edge high frequency earthing impedance conditions under capacitance size with
The curve relation figure of RF impedance.
Specific embodiment
The present invention is further elaborated by the way that a preferable specific embodiment is described in detail below in conjunction with attached drawing.
As shown in figure 3, the invention proposes a kind of CCP etching device of adjustable edge radio frequency plasma distribution,
For a kind of dual frequency plasma system, it includes: the top electrode being oppositely arranged in cavity 1 and lower electrode；Radio frequency power source
(usually in 40MHz-200MHz) connects the lower electrode, for by the reaction gas excitation between top electrode, lower electrode for etc.
Gas ions are usually made of HF generator and HF matching network；Bias power source (usually in 100kHz-10MHz), connection
The lower electrode or top electrode, for controlling distribution i.e. plasma sheath thickness and the Dc bias of energy of plasma,
It is usually made of LF generator and LF matching network, the present embodiment is for connecting lower electrode；Edge electrodes 10, setting exist
In cavity 1, in a ring, setting is peripheral and concentric with lower electrode in the lower electrode；Impedance adjustment unit 11, one end connect side
Edge electrode 10, other end ground connection, to form a fringe RF current earthing access, i.e., from lower electrode to top electrode to edge electricity
Ground is arrived in pole 10 again, to reach control radio frequency earth-return circuit impedance, i.e., by control by the ground connection radio-frequency currents of edge electrodes from
And fringe RF coupling is adjusted to achieve the purpose that adjust plasma characteristics and sheaths distribution, usual above-mentioned control mode can
To be realized by increasing a control unit.
Also include in the cavity 1 of usual CCP etching device: electrostatic chuck 6 is used to adsorb substrate to be processed 5 to be processed, if
Electrostatic chuck 6 is set above the lower electrode；Dead ring 8 is arranged in above the extension of the lower electrode periphery, is arranged in chamber
Shift(ing) ring 2 on 1 inner sidewall of body, the spray head 4 for being used to spray reaction gas being arranged in below top electrode, process kit 7, limit
Ring 3 and bezel ring, 9 processed, as shown in figure 3, the edge electrodes 10 can be embedded in the dead ring 8 in the present embodiment.
As shown in figure 4, a sensor can also be arranged, in fringe RF current earthing access to acquire radio frequency ginseng
Number, and it is possible to control unit be connected impedance adjustment unit and sensor, to monitor the variation of radio frequency parameter and according to change
Change situation and on-line control is carried out to the impedance of impedance adjustment unit.
As shown in figure 5, the one kind in the equivalent radio frequency circuit for edge electrodes 10, wherein the impedance adjustment unit 11
Include: concatenated capacitor and inductance, certainly, the quantity of capacitor and inductance are unlimited, preferably, the capacitor and/or inductance is
Variable, inductively or capacitively by least one of control unit connection impedance adjustment unit, so that it may reach and adjust impedance tune
Save the purpose of the impedance of unit, the specification of RF component can select according to demand it is different, to be formed to low frequency or high frequency
Different impedances, to control different frequency radio-frequency power in the couple current size over the ground at edge.
The invention also provides a kind of methods of adjustable edge radio frequency plasma distribution, are etched using above-mentioned CCP
Device realizes, it includes: while radio frequency power source and bias power source being applied on the lower electrode；It is right as needed
The impedance of impedance adjustment unit is adjusted, and to adjust fringe RF coupling, and then achievees the purpose that etching homogeneity is adjusted.
As shown in Figure 6,7, influence of the capacitance size to high and low frequency is illustrated, capacitor is mainly restricted to low-frequency current
Effect, and in a dual frequency plasma system, inductance is much larger than to low frequency (< the impedance of high frequency (> 10MHz)
Impedance 10MHz) is based on the relationship, in the embodiment that the impedance adjustment unit 11 includes concatenated capacitor and inductance,
The impedance adjusting method of the impedance adjustment unit 11 is: being adjusted to capacitance and inductance value, the first inductance value is selected to match
The first variable capacitance is closed, to realize the high impedance to high frequency 40MHz-200MHz and the tune to low frequency 100kHz-10MHz impedance
Section；Capacitance and inductance value are adjusted, the second inductance value is selected to cooperate the second variable capacitance, to realize to low frequency
The high impedance of 100kHz-10MHz and adjusting to high frequency 40MHz-200MHz impedance, the first, second capacitor mentioned herein
Value or the size value of the first, second variable inductance value can be according to the impedances to high frequency and to the resistance requirements of low frequency by ability
Field technique personnel are rule of thumb calculated, also, the first inductance value should be a biggish inductance value, and the second inductance value is answered
When being a lesser inductance value, first the second inductance value of inductance value >, the first variable capacitance should be one it is biggish can
Power transformation capacitance, the second variable capacitance should be a lesser variable capacitances, and the first variable capacitance > second can power transformation
Capacitance.
Impedance adjustment unit proposed by the present invention is by flowing into ground terminal by edge electrodes to the adjusting selection of impedance
Electric current, but it is an object of the invention to adjust to reach crystal round fringes region, that is, annular the top of process kit 7 etc.
Gas ions distribution needs enough radio frequency power supplies to 7 top of process kit, so edge electrodes 10 are not suitable for being arranged under
Between electrode and process kit 7, to prevent a large amount of radio-frequency powers from directly being guided, process kit 7 is not arrived.Therefore of the invention
Edge electrodes 10 need between process kit 7 and reaction chamber side wall, that is, the inner sidewall diameter of edge electrodes 10 needs
More than or equal to the outer sidewall diameter of process kit 7.
In conclusion the present invention by configuring edge electrodes and impedance-matching device, is hindered with controlling radio frequency earth-return circuit
It is anti-, it realizes the passive adjusting to edge RF coupling, reduces additional supply, radio frequency input and the use of radio frequency isolation device,
It simplifies cavity design and reduces hardware cost.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (9)
1. a kind of CCP etching device of adjustable edge radio frequency plasma distribution, characterized by comprising:
The top electrode being oppositely arranged and lower electrode；
Radio frequency power source connects the lower electrode or top electrode；
Bias power source connects the lower electrode；
Edge electrodes, in a ring, setting are peripheral and concentric with lower electrode in the lower electrode；
Impedance adjustment unit, one end connect edge electrodes, other end ground connection, to form a fringe RF current earthing access；
Electrostatic chuck is arranged above the lower electrode；
Dead ring is arranged in above the extension of the lower electrode periphery, and the edge electrodes are embedded in the dead ring.
2. the CCP etching device of adjustable edge radio frequency plasma distribution as described in claim 1, which is characterized in that institute
The impedance adjustment unit stated includes:
Concatenated capacitor and inductance.
3. the CCP etching device of adjustable edge radio frequency plasma distribution as claimed in claim 2, which is characterized in that also
Include:
Control unit connects capacitor and/or inductance in impedance adjustment unit, to adjust the impedance of impedance adjustment unit.
4. the CCP etching device of adjustable edge radio frequency plasma distribution as claimed in claim 3, it is characterised in that:
The capacitor and/or inductance is variable.
5. the CCP etching device of adjustable edge radio frequency plasma distribution as described in claim 1, which is characterized in that also
Include:
Sensor is arranged in fringe RF current earthing access, to acquire radio frequency parameter.
6. the CCP etching device of adjustable edge radio frequency plasma distribution as claimed in claim 5, which is characterized in that also
Include:
Control unit connects impedance adjustment unit and sensor, to monitor the variation of radio frequency parameter and according to situation of change pair
The impedance of impedance adjustment unit carries out on-line control.
7. the CCP etching device of adjustable edge radio frequency plasma distribution as described in claim 1, it is characterised in that:
The electrostatic chuck further includes that a process kit is located above dead ring for fixing wafer to be etched, the work
Skill external member is around the wafer, and wherein the inner sidewall diameter of edge electrodes is more than or equal to the outside diameter of the process kit.
8. a kind of method of adjustable edge radio frequency plasma distribution, using CCP etching device as described in claim 1 come
It realizes, it is characterised in that:
Radio frequency power source and bias power source are applied on the lower electrode simultaneously；
The impedance of impedance adjustment unit is adjusted as needed, to adjust fringe RF coupling, and then it is uniform to reach etching
Property adjust purpose.
9. the method for adjustable edge radio frequency plasma distribution as claimed in claim 8, it is characterised in that:
The impedance adjustment unit includes concatenated capacitor and inductance；
The impedance adjusting method of the impedance adjustment unit is:
Capacitance and inductance value are adjusted, the first inductance value is selected to cooperate the first variable capacitance, to realize to high frequency
The high impedance of 40MHz-200MHz and adjusting to low frequency 100kHz-10MHz impedance；
Capacitance and inductance value are adjusted, the second inductance value is selected to cooperate the second variable capacitance, to realize to low frequency
The high impedance of 100kHz-10MHz and adjusting to high frequency 400MHz-200MHz impedance, wherein the first inductance value is greater than the second electricity
Inductance value.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810400178.3A CN110416049B (en) | 2018-04-28 | 2018-04-28 | CCP etching device and method capable of adjusting edge radio frequency plasma distribution |
| TW108108926A TWI732190B (en) | 2018-04-28 | 2019-03-15 | CCP etching device and method capable of adjusting edge radio frequency plasma distribution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810400178.3A CN110416049B (en) | 2018-04-28 | 2018-04-28 | CCP etching device and method capable of adjusting edge radio frequency plasma distribution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110416049A true CN110416049A (en) | 2019-11-05 |
| CN110416049B CN110416049B (en) | 2022-02-11 |
Family
ID=68357319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810400178.3A Active CN110416049B (en) | 2018-04-28 | 2018-04-28 | CCP etching device and method capable of adjusting edge radio frequency plasma distribution |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110416049B (en) |
| TW (1) | TWI732190B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211078A (en) * | 2020-01-14 | 2020-05-29 | 长江存储科技有限责任公司 | Wafer calibration device and method and wafer edge etching equipment and method |
| CN111681976A (en) * | 2020-07-01 | 2020-09-18 | 上海邦芯半导体设备有限公司 | Inductive coupling edge etching reaction device and edge etching method |
| WO2020253514A1 (en) * | 2019-06-17 | 2020-12-24 | 北京北方华创微电子装备有限公司 | Lower electrode device and plasma system |
| CN112838040A (en) * | 2019-11-25 | 2021-05-25 | 中微半导体设备(上海)股份有限公司 | Wafer clamping device and plasma processing equipment |
| US20210217593A1 (en) * | 2020-01-10 | 2021-07-15 | COMET Technologies USA, Inc. | Sector shunts for plasma-based wafer processing systems |
| CN113130284A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| CN113838734A (en) * | 2020-06-24 | 2021-12-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
| CN113936988A (en) * | 2021-10-12 | 2022-01-14 | 大连理工大学 | Edge plasma distribution adjusting device |
| CN114203514A (en) * | 2021-12-14 | 2022-03-18 | 拓荆科技股份有限公司 | Wafer supporting seat and process cavity |
| CN114664622A (en) * | 2020-12-23 | 2022-06-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and adjusting method |
| CN114695045A (en) * | 2020-12-29 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023240003A1 (en) * | 2022-06-08 | 2023-12-14 | Lam Research Corporation | Rf and dc frequency and phase locked pulsed edge tilt control system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130008605A1 (en) * | 2005-08-05 | 2013-01-10 | Gerald Yin | Multi-station decoupled reactive ion etch chamber |
| CN103715049A (en) * | 2012-09-29 | 2014-04-09 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and method for adjusting process rate of marginal area of substrate |
| CN103915308A (en) * | 2012-12-31 | 2014-07-09 | 中微半导体设备(上海)有限公司 | Double radio-frequency pulse plasma etching method and etching device |
| CN107665804A (en) * | 2016-07-25 | 2018-02-06 | 朗姆研究公司 | The system and method that predetermined factor is realized by edge RF generators of synchronously advocating peace |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5006760A (en) * | 1987-01-09 | 1991-04-09 | Motorola, Inc. | Capacitive feed for plasma reactor |
| TW506234B (en) * | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
| US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
| US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
| JP5657262B2 (en) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US9275838B2 (en) * | 2009-09-02 | 2016-03-01 | Lam Research Corporation | Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof |
-
2018
- 2018-04-28 CN CN201810400178.3A patent/CN110416049B/en active Active
-
2019
- 2019-03-15 TW TW108108926A patent/TWI732190B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130008605A1 (en) * | 2005-08-05 | 2013-01-10 | Gerald Yin | Multi-station decoupled reactive ion etch chamber |
| CN103715049A (en) * | 2012-09-29 | 2014-04-09 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and method for adjusting process rate of marginal area of substrate |
| CN103915308A (en) * | 2012-12-31 | 2014-07-09 | 中微半导体设备(上海)有限公司 | Double radio-frequency pulse plasma etching method and etching device |
| CN107665804A (en) * | 2016-07-25 | 2018-02-06 | 朗姆研究公司 | The system and method that predetermined factor is realized by edge RF generators of synchronously advocating peace |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020253514A1 (en) * | 2019-06-17 | 2020-12-24 | 北京北方华创微电子装备有限公司 | Lower electrode device and plasma system |
| CN112838040A (en) * | 2019-11-25 | 2021-05-25 | 中微半导体设备(上海)股份有限公司 | Wafer clamping device and plasma processing equipment |
| CN112838040B (en) * | 2019-11-25 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | Wafer clamping device and plasma processing equipment |
| CN113130284B (en) * | 2019-12-31 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| CN113130284A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| US11887820B2 (en) * | 2020-01-10 | 2024-01-30 | COMET Technologies USA, Inc. | Sector shunts for plasma-based wafer processing systems |
| US20210217593A1 (en) * | 2020-01-10 | 2021-07-15 | COMET Technologies USA, Inc. | Sector shunts for plasma-based wafer processing systems |
| CN111211078A (en) * | 2020-01-14 | 2020-05-29 | 长江存储科技有限责任公司 | Wafer calibration device and method and wafer edge etching equipment and method |
| CN113838734A (en) * | 2020-06-24 | 2021-12-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
| CN113838734B (en) * | 2020-06-24 | 2023-09-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
| CN111681976A (en) * | 2020-07-01 | 2020-09-18 | 上海邦芯半导体设备有限公司 | Inductive coupling edge etching reaction device and edge etching method |
| CN114664622A (en) * | 2020-12-23 | 2022-06-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and adjusting method |
| CN114695045A (en) * | 2020-12-29 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| CN113936988A (en) * | 2021-10-12 | 2022-01-14 | 大连理工大学 | Edge plasma distribution adjusting device |
| CN114203514A (en) * | 2021-12-14 | 2022-03-18 | 拓荆科技股份有限公司 | Wafer supporting seat and process cavity |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201946150A (en) | 2019-12-01 |
| TWI732190B (en) | 2021-07-01 |
| CN110416049B (en) | 2022-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110416049A (en) | The CCP etching device and its method of adjustable edge radio frequency plasma distribution | |
| US10450653B2 (en) | High impedance RF filter for heater with impedance tuning device | |
| CN112106169B (en) | RF ground configuration for susceptor | |
| US11830747B2 (en) | Plasma reactor having a function of tuning low frequency RF power distribution | |
| JP6279544B2 (en) | Method and apparatus for selectively modifying an RF current path in a plasma processing system | |
| KR102137617B1 (en) | Plasma processing apparatus | |
| JP5492070B2 (en) | Method and plasma processing apparatus for inducing a DC voltage on an electrode facing a wafer | |
| US7537672B1 (en) | Apparatus for plasma processing | |
| CN101043784B (en) | Hybrid plasma reactor | |
| KR20160100840A (en) | Method for controlling potential of susceptor of plasma processing apparatus | |
| US20050061445A1 (en) | Plasma processing apparatus | |
| US12106938B2 (en) | Distortion current mitigation in a radio frequency plasma processing chamber | |
| KR102009369B1 (en) | Plasma processing apparatus | |
| US7777599B2 (en) | Methods and apparatus for controlling characteristics of a plasma | |
| US6879870B2 (en) | Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber | |
| KR20140137439A (en) | Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system | |
| CN113496862A (en) | Plasma reactor and radio frequency power distribution adjusting method thereof | |
| KR102467966B1 (en) | Hybrid plasma generator and control method of hybrid plasma generator | |
| JP2001237099A (en) | Plasma processing equipment | |
| KR102298032B1 (en) | Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground | |
| CN112151343B (en) | Capacitive coupling plasma processing device and method thereof | |
| KR101520670B1 (en) | Plasma Source | |
| TW201842529A (en) | Icp antenna and substrate processing device including the same | |
| KR102081686B1 (en) | Substrate processing method using plasma | |
| KR20160092808A (en) | Plasma generating apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |