CN114695045A - Plasma etching equipment - Google Patents
Plasma etching equipment Download PDFInfo
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- CN114695045A CN114695045A CN202011596795.9A CN202011596795A CN114695045A CN 114695045 A CN114695045 A CN 114695045A CN 202011596795 A CN202011596795 A CN 202011596795A CN 114695045 A CN114695045 A CN 114695045A
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 16
- 239000007789 gas Substances 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 9
- 238000007789 sealing Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides a plasma etching device, which adjusts the impedance of a radio frequency loop by arranging an impedance adjusting device on a grounding ring, so that the impedance of the whole radio frequency loop can be correspondingly adjusted when the distance between an upper electrode and a lower electrode is adjusted, the stability of the radio frequency loop is maintained, and a desired etching effect is obtained. In addition, the impedance adjusting device can be uniformly distributed along the circumferential direction of the grounding ring, so that a local adjusting effect is realized, and the problem of edge deviation in etching is solved.
Description
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to plasma etching equipment.
Background
Micromachining of semiconductor substrates or substrates is a well-known technique that may be used to fabricate, for example, semiconductors, flat panel displays, Light Emitting Diodes (LEDs), solar cells, and the like. An important step in microfabrication is a plasma processing process step, which is performed inside a reaction chamber into which process gases are introduced. An rf source is inductively and/or capacitively coupled to the interior of the chamber to excite the process gases to form and maintain a plasma.
With the updating of etching equipment, the structural design of the interior of the reaction chamber is increasingly complex. For example, for capacitively coupled plasma processing equipment, as the requirements of the processing technology are increased, different etching steps need to be performed at different distances between the upper and lower plates. However, when the bottom electrode moves, the electrode is used as a part of the rf loop, which results in instability of the rf signal and variation of the impedance of the rf loop, thereby affecting the etching effect of the substrate. Therefore, a solution is needed to achieve both the adjustability of the inter-plate distance and the adjustment of the impedance of the rf loop.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a plasma etching apparatus comprising
The vacuum reaction chamber is internally provided with a base component for bearing the substrate;
the gas supply device is used for conveying reaction gas into the vacuum reaction cavity;
a ground ring positioned between a sidewall of the vacuum reaction chamber and the susceptor assembly;
the conductive support rod is fixedly connected with the bottom of the base component and is used for enabling the base component to axially move along the conductive support rod;
a retractable seal disposed between the base assembly and a bottom wall of the vacuum reaction chamber;
and the impedance adjusting device is positioned on the grounding ring and used for adjusting the impedance of the grounding ring.
Optionally, the retractable sealing portion connects the base assembly and the bottom wall of the vacuum reaction chamber.
Optionally, the retractable seal connects the base assembly and the ground ring.
Optionally, the base assembly includes an electrostatic chuck and an insulating ring disposed outside the electrostatic chuck, and the retractable sealing portion is fixedly connected to the insulating ring.
Optionally, the base assembly includes an electrostatic chuck, an insulating ring disposed outside the electrostatic chuck, and a conductive ring disposed outside the insulating ring, and the retractable sealing portion is fixedly connected to the conductive ring; the conducting ring is connected with the bottom wall of the vacuum reaction chamber or the grounding ring through a conducting strip.
Optionally, a gap is formed between the grounding ring and the base, and a gas shielding ring is arranged above the gap
Optionally, the impedance adjusting device includes a plurality of adjustable capacitors.
Optionally, the ground ring has an opening, and the impedance adjusting device is connected to the opening through a conductive tape.
Optionally, the conductive band is anodized.
Optionally, an isolation ring is provided at the opening of the ground ring to prevent plasma from corroding the conductive strip through the opening.
Optionally, the impedance adjusting devices are uniformly distributed along the circumferential direction of the ground ring.
The invention provides a plasma etching device, which adjusts the impedance of a radio frequency loop by arranging an impedance adjusting device on a grounding ring, so that the impedance of the whole radio frequency loop can be correspondingly adjusted when the distance between an upper electrode and a lower electrode is adjusted, the stability of the radio frequency loop is maintained, and a desired etching effect is obtained. In addition, the impedance adjusting device can be uniformly distributed along the circumferential direction of the grounding ring, so that a local adjusting effect is realized, and the problem of edge deviation in etching is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural view showing a plasma etching apparatus according to a first embodiment of the present invention;
fig. 2 shows a circuit connection diagram of an impedance adjusting apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural view showing a plasma etching apparatus according to a second embodiment of the present invention;
fig. 4 is a schematic configuration diagram showing a plasma etching apparatus according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 shows a schematic configuration diagram of a plasma etching apparatus according to a first embodiment of the present invention. In this embodiment, the plasma etching apparatus includes a vacuum reaction chamber 1 surrounded by a metal outer wall. The vacuum reaction chamber 1 is used to accommodate other components so that the substrate can be etched in a vacuum environment. The vacuum reaction chamber 1 includes a gas supply device 2 inside, the gas supply device 2 includes a gas inlet channel and an upper electrode connected with the gas inlet channel, the upper electrode is also called a shower head, generally, the end surface of the upper electrode in the reaction chamber is provided with a vent hole, and the process gas enters the upper electrode through the gas inlet channel, is rectified by the vent hole and then is conveyed into the reaction chamber. A base assembly 10 is disposed opposite the upper electrode, the base assembly 10 including an electrostatic chuck 1021, a base 1011, a first insulating ring 1031, and a second insulating ring 1041. Specifically, the electrostatic chuck 1021 carries the processing substrate and serves to hold the substrate during processing. The base 1011 is made of metal material and can be used as a lower electrode for plasma etching, the base 1011 is fixedly connected with the conductive supporting rod 1012, and the conductive supporting rod 1012 can be a corrugated pipe. In other embodiments, the support rod is made of an insulating material and is connected to the base 1011 by a conductive cable. The conductive support rod 1012 is fixedly connected to a driving device, and the driving device can drive the base 1011 to move axially along the conductive support rod. The base 1011 may also have several insulating rings on the outside. In this embodiment, the first insulating ring 1031 is fixed to the outside of the base 1011, and the second insulating ring 1041 is fixed to the outside of the first insulating ring 1031. The insulating rings are made of an insulating material, such as a ceramic material, and electrically isolate the susceptor 1011 from other components (e.g., the ground ring 3) in the vacuum reaction chamber 1.
The base component 10 is connected with the telescopic sealing portion 5, the upper surface of the base component 10 is hermetically arranged in the accommodating space of the reaction chamber through the telescopic sealing portion 5, and the telescopic sealing portion 5 is made of an insulating material, for example, a sealing corrugated pipe, that is, a corrugated pipe for sealing. The upper surface of the base assembly 10 is here the surface facing the upper electrode. It will be appreciated that the retractable seal 5 may be secured directly or indirectly to the base assembly 10, and when the base assembly 10 includes other components, the retractable seal 5 may cooperate with the other components to effect a seal at the bottom of the chamber such that the surface of the base assembly 10 facing the upper electrode is within the enclosed chamber. In this embodiment, the second insulating ring 1041 is fixed on the bottom wall of the chamber through the retractable sealing portion 140, so that the upper surface of the susceptor assembly 10 is hermetically disposed in the accommodating space of the reaction chamber 1, the closed space at the lower portion of the reaction chamber is surrounded by the sidewall and the bottom wall of the reaction chamber, the outer side of the retractable sealing portion 140 and the sidewall of the second insulating ring 1041, and the lower surface of the susceptor assembly 10, the conductive support rod 110, the inner side of the retractable sealing portion 140 and the driving device are disposed in the atmosphere outside the reaction chamber 1. Note that "inner side" in the present application means a side near the center of the base 1011; "outer side" means a side away from the center of the base 1011. A vacuum environment is provided in the reaction chamber 1 for the etching process. Through the arrangement, the up-and-down movement of the base can be realized in a vacuum environment under the condition that the reaction cavity is fixed, and then the distance between the upper electrode and the base component is adjusted.
The grounding ring 3 is disposed in the vacuum reaction chamber 1, is located between the susceptor assembly 10 and the sidewall of the vacuum reaction chamber 1, and surrounds the side of the susceptor assembly 10, and forms a cylindrical gap 41 with the susceptor assembly 10 due to a certain extension along the side direction of the susceptor assembly 10, and the gap 41 leaves a moving space for the up-and-down movement of the susceptor assembly 10. A shadow ring 43 is disposed over the gap 41 at the edge of the susceptor assembly 10, the shadow ring 43 serving to partially block plasma that may enter the gap 41 to prevent corrosion of the ground ring and the insulator ring. The upper edge of the ground ring 3 is connected to the sidewall of the vacuum reaction chamber 1 through an electrically conductive member 61, the electrically conductive member 61 being located at the bottom of the plasma confinement ring 6. A cavity 42 is formed between the ground ring 3 and the side wall. Typically, a vacuum pump evacuates the reaction chamber from the cavity 42, the uncharged gas is pumped through the plasma confinement ring 6 by the vacuum pump to maintain the gas pressure within the chamber, and the plasma is confined above the plasma confinement ring 6 to process the substrate.
A radio frequency power source is connected to the underside of the conductive support 1012 to provide radio frequency power to the susceptor assembly. The conductive supporting rod 1012 may be connected to one or more rf adapters, for example, 2 rf adapters, and each rf adapter may provide rf frequency and power different from those of other rf adapters under the condition of connecting multiple rf adapters, so as to meet the requirements of different processing technologies. In other embodiments, the conductive support rod 1012 may be connected to a rf matcher, and the upper electrode may be connected to another rf matcher, which may provide different rf frequencies and powers. When the rf power source supplies rf power to the vacuum reaction chamber 1, the conductive support rod 1012, the susceptor 1011, the upper electrode of the gas supply device 2, the top wall and the side wall of the vacuum reaction chamber 1, the conductive member 61, the ground ring 3 and the bottom wall of the vacuum reaction chamber 1 together form a complete rf circuit. As the susceptor assembly 10 moves up and down to change the spacing between the electrostatic chuck 1021 and the upper electrode, the impedance of the rf loop changes, thereby affecting a variety of process parameters, such as etch rate, uniformity, etc., after the susceptor assembly is moved. In order to adjust the moved process parameters to the required parameters as soon as possible, an impedance adjusting device is introduced into the whole radio frequency loop, and the impedance of the loop is adjusted in real time to obtain the expected etching effect.
In the present embodiment, the ground ring 3 is provided with an impedance adjusting device 7. Specifically, an opening 4 is provided on the ground ring 3, and the opening may have a circular, square, or other irregular shape. The impedance adjusting means 7 is connected to the opening 4 by a conductive strip 71, i.e. the impedance adjusting means 7 is connected in series into the loop in which the ground ring 3 is located, forming part of the radio frequency loop, as shown in fig. 1. The conductive tape 71 is made of a conductive material such as copper, aluminum, or the like. The outer side of the conductive tape 71 is anodized to prevent plasma corrosion. In another embodiment, the conductive strip 71 is embedded in the ground ring 1 without being exposed to contact with the gap 41. Fig. 2 shows a circuit diagram of the impedance adjusting means 7 according to an embodiment. As shown in fig. 2, the impedance adjusting device 7 includes a variable capacitor C1, an inductor L, and a capacitor C2. The variable capacitor C1 and the inductor L are connected in series with the conductive strip 71. The variable capacitance C1 may be a vacuum variable capacitor, such as a glass insulated housing vacuum capacitor or a ceramic insulated housing vacuum capacitor. The capacitance value of the capacitor 71 is adjusted by electrically connecting the controller 71. The controller 71 is disposed outside the vacuum reaction chamber. In another embodiment, the controller 71 can be disposed inside the vacuum reaction chamber, and receive an external signal through a wireless connection (e.g., bluetooth, zigbee, etc.) to adjust the capacitance of the variable capacitor. A plurality of impedance adjusting devices 7 may be disposed along the circumference of the ground ring 3 to adjust the impedance of the local rf loop in the circumference, thereby solving the problem of edge-to-edge etching non-uniformity. For example, in one embodiment, the impedance adjusting means 7 is provided at 0 degree, 120 degree and 240 degree orientations on the circumference of the ground ring 3. In another embodiment, the impedance adjusting means 7 is provided at 0 degree, 90 degree, 180 degree and 270 degree orientations on the circumference of the ground ring 3. In another embodiment, the impedance adjusting means 7 may be non-uniformly arranged on the ground ring 3, for example, the impedance adjusting means 7 is arranged in 0 degree, 30 degree, 180 degree and 330 degree orientations on the circumference of the ground ring 3.
Further, a focus ring surrounding the electrostatic chuck 1021 is provided on the first and second insulating rings, and the focus ring is used to prevent arc discharge, and in this specific example, as shown in fig. 1, the upper portion of the focus ring near the inner wall of the electrostatic chuck 1021 is a chamfered surface with a flare. An edge ring is disposed on an end of the focus ring distal from the electrostatic chuck 1021. In this embodiment, the edge ring has a recessed area for placement of the focus ring.
Fig. 3 shows a schematic configuration diagram of a plasma etching apparatus according to a second embodiment of the present invention. For clarity and conciseness of description, the same parts as the above parts are described by using the same reference numerals. Unlike the first embodiment, the base assembly 10 includes an electrostatic chuck 1021, a base 1011, a first insulating ring 1031, and a conductive ring 1051. The first insulating ring 1031 is fixed on the outer side of the base 1011, and the conductive ring 1051 is fixed on the outer side of the first insulating ring 1031. The conductive ring 1051 is made of a metallic material, such as copper or aluminum. The conductive ring 1051 is externally located on the rf return path inside the chamber, and the conductive ring 1051 is fixed to the bottom surface 32 of the ground ring 3 by a retractable seal 5, the retractable seal 5 being retractable along the axis of the conductive support 1012, i.e. having the same moving direction as the conductive support 1012. At the same time, conductive loop 1051 is connected to ground ring 3 by conductive strip 8 so that conductive loop 1051 is at the same potential as ground ring 3. Thus, in this embodiment, the complete rf loop flow is the conductive support rod 1012, the base 1011, the upper electrode of the gas supply 2, the top wall and the side wall of the vacuum reaction chamber 1, the conductive member 61, the grounding ring 3, the outside of the conductive strip 8, the outside of the conductive ring 1051, the inside of the conductive strip 8 and the bottom wall of the vacuum reaction chamber 1. The rf radiation from the base 1011 to its outside is isolated by the conductive ring 1051. Thus, when the base assembly 10 moves, the conducting ring 1051 moves up and down along with the base 1011, so that the radio frequency field of the base 1011 is prevented from affecting the radio frequency return current on the grounding ring 3, and the instability of the radio frequency loop caused by the base radio frequency field in the moving process is prevented to a certain extent, thereby realizing the adjustment of the distance between the electrode plates and simultaneously considering the stability of the radio frequency loop. Similar to the above-described embodiment, the impedance adjusting means 7 may be uniformly distributed on the ground ring 3. In another embodiment, the impedance adjusting means 7 may be evenly distributed on the conductive loop 1051. In yet another embodiment, the impedance adjusting means 7 may be arranged on the ground ring 3 or on the conductive ring 1051 in a non-uniform distribution. In this embodiment, ground ring 3 and vacuum reaction chamber 1 detachable setting, be convenient for change when ground ring 3 takes place damage or trouble, ground ring 3 links to each other with the reaction chamber bottom through metal packing ring 31, through to metal packing ring 31 and with bottom contact department nickel plating, can guarantee good electrical contact, can not influence the stability of radio frequency return circuit, in order to place metal packing ring, vacuum packing ring and lock screw, ground ring 3 is set to have a plane 32 parallel with the reaction chamber bottom in the lower part, scalable sealing portion 5 fixed connection is at the upper surface of plane 32.
Fig. 4 shows the structure of a third embodiment of the plasma etching apparatus, and for clarity and conciseness of description, the same parts and components as those described above are described by using the same reference numerals. The difference from the second embodiment is that in the present embodiment, there is an isolation ring 9 at the opening 4 of the ground ring 3 for preventing the plasma from entering the opening 4 through the gap 41 and corroding the conductive tape 71. The insulating ring 9 is made of an insulating material, such as quartz or alumina, and has a size approximately corresponding to the size of the opening 4. The isolating ring 9 may be connected directly or indirectly to the grounding ring 3. The side of the isolating ring 9 facing the gap 41 is anodized to prevent plasma erosion.
The invention provides a plasma etching device, which adjusts the impedance of a radio frequency loop by arranging an impedance adjusting device on a grounding ring, so that the impedance of the whole radio frequency loop can be correspondingly adjusted when the distance between an upper electrode and a lower electrode is adjusted, the stability of the radio frequency loop is maintained, and a desired etching effect is obtained. In addition, the impedance adjusting device can be uniformly distributed along the circumferential direction of the grounding ring, so that a local adjusting effect is realized, and the problem of edge deviation in etching is solved.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (11)
1. A plasma etching apparatus, comprising:
the vacuum reaction chamber is internally provided with a base component for bearing the substrate;
the gas supply device is used for conveying reaction gas into the vacuum reaction cavity;
a ground ring positioned between a sidewall of the vacuum reaction chamber and the susceptor assembly;
the conductive support rod is fixedly connected with the bottom of the base component and used for enabling the base component to axially move along the conductive support rod;
a retractable seal disposed between the base assembly and a bottom wall of the vacuum reaction chamber;
and the impedance adjusting device is positioned on the grounding ring and used for adjusting the impedance of the grounding ring.
2. The apparatus of claim 1, wherein the retractable seal connects the base assembly and a bottom wall of the vacuum reaction chamber.
3. The apparatus of claim 1, wherein the retractable seal connects the base assembly and the ground ring.
4. The apparatus of claim 1, wherein the base assembly comprises an electrostatic chuck and an insulating ring disposed outside the electrostatic chuck, the retractable seal being fixedly coupled to the insulating ring.
5. The apparatus of claim 1, wherein the base assembly comprises an electrostatic chuck, an insulating ring disposed outside the electrostatic chuck, and a conductive ring disposed outside the insulating ring, the retractable seal being fixedly connected to the conductive ring; the conducting ring is connected with the bottom wall of the vacuum reaction chamber or the grounding ring through a conducting strip.
6. The apparatus of claim 1, wherein the ground ring has a gap with the base, and a gas shield ring is disposed over the gap.
7. The apparatus of claims 1-6, wherein the impedance adjustment device comprises a plurality of adjustable capacitors.
8. The apparatus of claim 7, wherein the ground ring has an opening therein, and the impedance adjusting means is connected to the opening by a conductive strap.
9. The apparatus of claim 8, wherein the conductive strips are anodized.
10. The apparatus of claim 8, wherein an isolation ring is provided at the opening of the ground ring to prevent plasma from corroding the conductive ribbon through the opening.
11. The apparatus of claim 7, wherein the impedance tuning devices are evenly distributed along a circumference of the ground ring.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011596795.9A CN114695045A (en) | 2020-12-29 | 2020-12-29 | Plasma etching equipment |
| TW110140200A TWI809543B (en) | 2020-12-29 | 2021-10-29 | Plasma Etching Equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011596795.9A CN114695045A (en) | 2020-12-29 | 2020-12-29 | Plasma etching equipment |
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| CN114695045A true CN114695045A (en) | 2022-07-01 |
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| CN202011596795.9A Pending CN114695045A (en) | 2020-12-29 | 2020-12-29 | Plasma etching equipment |
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| TW (1) | TWI809543B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101500370A (en) * | 2008-02-01 | 2009-08-05 | 恩益禧电子股份有限公司 | Plasma processing apparatus |
| KR20160004408A (en) * | 2014-06-30 | 2016-01-13 | 세메스 주식회사 | Apparatus and method for treating substrate |
| CN110416049A (en) * | 2018-04-28 | 2019-11-05 | 中微半导体设备(上海)股份有限公司 | The CCP etching device and its method of adjustable edge radio frequency plasma distribution |
| CN111326387A (en) * | 2018-12-17 | 2020-06-23 | 中微半导体设备(上海)股份有限公司 | Capacitive coupling plasma etching equipment |
| CN214152845U (en) * | 2020-12-29 | 2021-09-07 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5475261B2 (en) * | 2008-03-31 | 2014-04-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5683822B2 (en) * | 2009-03-06 | 2015-03-11 | 東京エレクトロン株式会社 | Plasma processing apparatus and electrode for plasma processing apparatus |
| JP2010232476A (en) * | 2009-03-27 | 2010-10-14 | Tokyo Electron Ltd | Plasma processing apparatus |
| US9337000B2 (en) * | 2013-10-01 | 2016-05-10 | Lam Research Corporation | Control of impedance of RF return path |
-
2020
- 2020-12-29 CN CN202011596795.9A patent/CN114695045A/en active Pending
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2021
- 2021-10-29 TW TW110140200A patent/TWI809543B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101500370A (en) * | 2008-02-01 | 2009-08-05 | 恩益禧电子股份有限公司 | Plasma processing apparatus |
| KR20160004408A (en) * | 2014-06-30 | 2016-01-13 | 세메스 주식회사 | Apparatus and method for treating substrate |
| CN110416049A (en) * | 2018-04-28 | 2019-11-05 | 中微半导体设备(上海)股份有限公司 | The CCP etching device and its method of adjustable edge radio frequency plasma distribution |
| CN111326387A (en) * | 2018-12-17 | 2020-06-23 | 中微半导体设备(上海)股份有限公司 | Capacitive coupling plasma etching equipment |
| CN214152845U (en) * | 2020-12-29 | 2021-09-07 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
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| Publication number | Publication date |
|---|---|
| TW202228185A (en) | 2022-07-16 |
| TWI809543B (en) | 2023-07-21 |
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