CN113130284B - Plasma etching equipment - Google Patents
Plasma etching equipment Download PDFInfo
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- CN113130284B CN113130284B CN201911418496.3A CN201911418496A CN113130284B CN 113130284 B CN113130284 B CN 113130284B CN 201911418496 A CN201911418496 A CN 201911418496A CN 113130284 B CN113130284 B CN 113130284B
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 61
- 230000007246 mechanism Effects 0.000 claims abstract description 35
- 230000008859 change Effects 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 10
- 239000004809 Teflon Substances 0.000 claims description 9
- 229920006362 Teflon® Polymers 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides a plasma etching device, comprising: an electrode assembly having a first electrode and a second electrode with a gap therebetween; a plasma confinement ring, the upper surface of which has a set space with a height smaller than the upper surface of the second electrode; a moving ring assembly; and the driving mechanism can change the spatial posture of the moving ring assembly, so that the moving ring assembly is in a first posture, the gap is exposed, a wafer to be etched is placed on the upper surface of the second electrode conveniently, or the moving ring assembly is in a second posture, the periphery of the gap is sealed, the gap is isolated and the space is set, so that a first plasma distribution space is formed, or the moving ring assembly is in a third posture, the periphery of the gap is sealed, and the gap is communicated with the set space, so that a second plasma distribution space is formed. The plasma etching equipment provided by the invention realizes the adjustment of the volume of the plasma, and has the advantages of simple structure and easy operation.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to plasma etching equipment.
Background
With the continuous improvement of the integration level of the semiconductor device, the line width of the semiconductor device is smaller and smaller, the control of the critical dimension is more and more important, and the requirement on the etching process is higher and higher. The etching process is a process for selectively removing a material formed on the surface of a silicon wafer or selectively removing a material of the silicon wafer. The etching process comprises wet etching and dry etching, and the dry etching is one of the most commonly used etching processes at present due to high selectivity and strong controllability. Dry etching is plasma etching, in which etching gas is generally introduced into a plasma processing apparatus, and the gas is ionized to form plasma, and the plasma is used to etch a wafer to be etched.
The existing plasma processing apparatus includes a Capacitively Coupled Plasma (CCP) etching apparatus and an Inductively Coupled Plasma (ICP) etching apparatus. For CCP, since wafers need to be placed in different plasma volumes for etching in processes where CCP etch rates are different, the edge etch rate of the wafer is improved. In order to meet the requirements of different process procedures on the volume of the plasma, the existing plasma etching equipment needs to be realized through the moving rings with different shapes, namely, the existing plasma etching equipment needs to be stopped, disassembled and replaced by the moving rings with different shapes, so that the operation is complex and the use is inconvenient.
Disclosure of Invention
In view of the above, the present invention provides a plasma etching apparatus, which can adjust the volume of the plasma without stopping the apparatus to replace the moving ring assembly, and has a simple structure and easy operation.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions:
a plasma etching apparatus, comprising:
an electrode assembly including a first electrode and a second electrode disposed opposite to each other, the first electrode being positioned above the second electrode with a gap therebetween;
a plasma confinement ring surrounding the second electrode and having an upper surface with a set space having a height smaller than that of the upper surface of the second electrode;
a movable moving ring assembly positioned above the plasma confinement ring and surrounding the electrode assembly;
the driving mechanism can change the spatial posture of the moving ring assembly, so that the moving ring assembly is in a first posture, the gap is exposed, a wafer to be etched is placed on the upper surface of the second electrode, or the moving ring assembly is in a second posture, the periphery of the gap is sealed, the gap and the set space are isolated, and a first plasma distribution space is formed, or the moving ring assembly is in a third posture, the periphery of the gap is sealed, the gap and the set space are communicated, and a second plasma distribution space is formed, wherein the second plasma distribution space is larger than the volume of the first plasma distribution space.
Preferably, in the above plasma etching apparatus, the moving ring assembly includes: a first moving ring and a second moving ring; the first moving ring and the second moving ring both encircle the electrode assembly and are both positioned above the plasma confinement ring;
the first moving ring is used for sealing or releasing the periphery of the gap, and the second moving ring is used for sealing or releasing the set space.
Preferably, in the above plasma etching apparatus, if in the first posture, the first moving ring and the second moving ring are both located above the gap to expose the gap;
if the plasma distribution device is in the second posture, the second moving ring covers the opening of the set space in a sealing mode, and the first moving ring seals the periphery of the gap to form a first plasma distribution space;
and if the second moving ring is in the third posture, the first moving ring seals the periphery of the gap, the gap is communicated with the set space to form a second plasma distribution space, and the second moving ring is positioned in the second plasma distribution space, is positioned above the opening of the set space and is separated from the opening of the set space.
Preferably, in the plasma etching apparatus described above, the first moving ring includes a top and a side wall, the top of the first moving ring is disposed opposite to the plasma confinement ring, and the side wall of the first moving ring is disposed opposite to the outer side wall of the setting space;
the second moving ring is arranged opposite to the opening of the set space, is positioned below the top of the first moving ring and is positioned in the surrounding area of the side wall of the first moving ring.
Preferably, in the above plasma etching apparatus, a top of the first moving ring is connected to the driving mechanism through a first connecting rod, and the driving mechanism drives the first moving ring to move in a first direction through the first connecting rod;
the second moving ring is connected with the driving mechanism through a second connecting rod, and the driving mechanism drives the second moving ring to move in the first direction through the second connecting rod;
the second connecting rod is connected with the driving mechanism through a through hole penetrating through the first moving ring; the first direction is a direction in which the first electrode is opposed to the second electrode.
Preferably, in the above plasma etching apparatus, a support member is fixed to a side wall of the first electrode;
and a first corrugated pipe connected with the first connecting rod is fixed above the supporting part, and a second corrugated pipe connected with the second connecting rod is fixed above the supporting part.
Preferably, in the above plasma etching apparatus, the driving mechanism includes: the first piston type cylinder is arranged on the first electrode, and a first connecting plate is fixed above the first piston type cylinder; the second piston type cylinder is arranged above the first connecting plate, and a second connecting plate is fixed above the second piston type cylinder;
the first piston type cylinder drives the first moving ring to move by driving the first connecting plate, and drives the second moving ring to move by driving the second piston type cylinder above and the second connecting plate;
the second piston type cylinder drives the second movable ring to move by driving the second connecting plate.
Preferably, in the plasma etching apparatus, the first moving ring is made of one of quartz, ceramic, and teflon;
the second moving ring is made of quartz, ceramic or Teflon.
Preferably, in the above plasma etching apparatus, further comprising: an insulating ring disposed between the second electrode and the plasma confinement ring.
Preferably, in the above plasma etching apparatus, the insulating ring is made of any one of quartz, ceramic, and teflon.
As can be seen from the above description, in the plasma etching apparatus provided in the embodiments of the present invention, when performing plasma etching, the spatial posture of the moving ring assembly may be changed by adjusting the driving mechanism, so that the moving ring assembly is in the first posture, and the gap is exposed, so as to place a wafer to be etched on the upper surface of the electrode assembly, or so that the moving ring assembly is in the second posture, and the periphery of the gap is sealed and the gap and the setting space are isolated, so as to form the first plasma distribution space, or so that the moving ring assembly is in the third posture, and the periphery of the gap is sealed and the gap and the setting space are communicated, so as to form the second plasma distribution space, where the second plasma distribution space is larger than the volume of the second plasma distribution space. By applying the plasma etching equipment provided by the embodiment of the invention, the adjustment of the volume of the plasma is realized under the condition of not needing to stop and replace the moving ring component, and the plasma etching equipment has a simple structure and is easy to operate.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a conventional plasma etching apparatus;
FIG. 2 is a schematic structural view of another conventional plasma etching apparatus;
FIG. 3 is a schematic structural diagram of a plasma etching apparatus according to the present invention;
FIG. 4 is a schematic structural diagram of another plasma etching apparatus provided in the present invention;
fig. 5 is a cross-sectional view of a moving ring assembly provided by an embodiment of the invention.
Detailed Description
The embodiments of the present application will be described in detail and fully hereinafter with reference to the accompanying drawings, wherein it is to be understood that the described embodiments are merely exemplary embodiments, and not restrictive, of the invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
As described in the background art, in order to meet the requirements of different process procedures on the volume of the plasma, the existing plasma etching equipment needs to be realized by moving rings with different shapes, namely, the existing plasma etching equipment needs to be stopped, disassembled and replaced by moving rings with different shapes, and the operation is complicated and inconvenient to use.
Referring to fig. 1, fig. 1 is a schematic structural view of a conventional plasma etching apparatus. As shown in fig. 1, the plasma etching apparatus includes a first electrode 11 and a second electrode 12 disposed opposite to each other, the first electrode 11 is disposed above the second electrode 12 with a gap 10 therebetween, a plasma confinement ring 13 surrounding the second electrode 12, the plasma confinement ring 13 has a predetermined space, an exhaust channel is disposed on the plasma confinement ring 13, the exhaust channel has a certain aspect ratio and collides with a sidewall of the exhaust channel when the plasma passes through the exhaust channel, the plasma is confined in a reaction region between the upper and lower electrodes while the plasma is exhausted, so as to prevent the plasma from leaking into the non-reaction region and damaging components of the non-reaction region, a moving ring 14 disposed above the plasma confinement ring 13, a piston cylinder 15 disposed above the first electrode 11, a connecting plate 19 is disposed above the piston cylinder 15, the moving ring 14 is connected to the connecting plate 19 via a connecting rod 17, a supporting plate 20 is fixed to a sidewall of the first electrode 11, the connecting rod 17 is connected to the moving ring 14 via a through hole in the supporting plate 20, and is connected to the supporting plate 20 via a bellows 16, and the plasma confinement ring 13 is disposed between the plasma confinement ring 13 and the second electrode 12 and the plasma confinement ring 13.
In the manner shown in fig. 1, the piston cylinder 15 is driven to drive the connecting rod 17 to move upward, so as to drive the moving ring 14 to move upward, exposing the gap 10, after the wafer to be etched is placed on the upper surface of the second electrode 12, the piston cylinder 15 is driven to drive the moving ring 14 to move downward, the moving ring 14 and the plasma confinement ring 13 form a first plasma distribution space, and the gap 10 is communicated with the set space, and finally, plasma is ignited, so as to etch the wafer.
In an embodiment, the setting space may be a groove disposed on the upper surface of the plasma confinement ring 13, and the implementation of the setting space is obviously not limited to the groove, and in other embodiments, the upper surface of the plasma confinement ring 13 may be directly disposed lower than the second electrode 12, such that the setting space may also be implemented by using a height difference therebetween, so as to adjust the size of the plasma distribution space.
Referring to fig. 2, fig. 2 is a schematic structural view of another conventional plasma etching apparatus. As shown in fig. 2, the plasma etching apparatus includes a first electrode 21 and a second electrode 22 disposed opposite to each other, the first electrode 21 is disposed above the second electrode 22 with a gap 30 therebetween, a plasma confinement ring 23 surrounding the second electrode 22 and having a predetermined space, a moving ring 24 disposed above the plasma confinement ring 23, a piston cylinder 25 disposed above the first electrode 21, a connection plate 29 disposed above the piston cylinder 25, the moving ring 24 connected to the connection plate 29 through a connection rod 27, a support plate 31 fixed to a side wall of the first electrode 21, the connection rod 27 connected to the moving ring 24 through a through hole of the support plate 31 and connected to the support plate 31 through a bellows 26, and an insulation ring 28 disposed between the second electrode 22 and the plasma confinement ring 23.
In the manner shown in fig. 2, the piston cylinder 25 is driven to drive the connecting rod 27 to move upward, so as to drive the moving ring 24 to move upward, thereby exposing the gap 30, after the wafer to be etched is placed on the upper surface of the second electrode 22, the piston cylinder 25 is driven to drive the moving ring 24 to move downward, the periphery of the gap 30 is sealed, the gap 30 and the set space are isolated, the moving ring 24 and the plasma confinement ring 23 form a second plasma distribution space, and finally, plasma is ignited, so as to etch the wafer.
As can be seen from fig. 1 and 2, the first plasma distribution space is larger than the second plasma distribution space.
In the plasma etching equipment described in the two modes, the moving ring is an integral part, and in order to meet the requirements of different process procedures on the volume of the plasma, the moving ring with different shapes needs to be disassembled and replaced by stopping the machine, so that the operation is complex and inconvenient to use.
In order to solve the above problems, the present invention provides a plasma etching apparatus, comprising:
an electrode assembly including a first electrode and a second electrode disposed opposite to each other, the first electrode being positioned above the second electrode with a gap therebetween;
a plasma confinement ring surrounding the second electrode and having an upper surface with a set space having a height smaller than that of the upper surface of the second electrode;
a movable moving ring assembly positioned above the plasma confinement ring and surrounding the electrode assembly;
the driving mechanism can change the spatial posture of the moving ring assembly, so that the moving ring assembly is in a first posture, the gap is exposed, a wafer to be etched is placed on the upper surface of the second electrode, or the moving ring assembly is in a second posture, the periphery of the gap is sealed, the gap and the set space are isolated, and a first plasma distribution space is formed, or the moving ring assembly is in a third posture, the periphery of the gap is sealed, the gap and the set space are communicated, and a second plasma distribution space is formed, wherein the second plasma distribution space is larger than the first plasma distribution space in volume.
Therefore, in the technical scheme provided by the embodiment of the invention, when plasma etching is carried out, the space posture of the movable ring assembly can be changed by adjusting the driving mechanism, the adjustment of the volume size of the plasma is realized under the condition that the movable ring assembly is not required to be stopped and replaced, and the plasma etching device is simple in structure and easy to operate.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 3 and 4, fig. 3 is a schematic structural diagram of a plasma etching apparatus according to an embodiment of the present invention, fig. 4 is a schematic structural diagram of another plasma etching apparatus according to an embodiment of the present invention, and fig. 3 and 4 show that when the moving ring assemblies in the same plasma etching apparatus have different spatial attitudes, design schemes of different plasma volumes can be implemented. In the embodiment of the invention, a moving ring with a complex structure is divided into two independent moving rings, the moving rings are driven by different piston type air cylinders, and the adjustment of the volume of plasma is realized by the same plasma etching equipment under the condition of not needing to stop and replace the moving rings.
Specifically, the plasma etching apparatus includes:
an electrode assembly comprising a first electrode 47 and a second electrode 32 disposed opposite one another, the first electrode 47 being positioned above the second electrode 32 with a gap 46 therebetween. The gap 46 is used to form plasma and perform an etching process.
A plasma confinement ring 33, the plasma confinement ring 33 surrounding the second electrode 32 and having an upper surface with a defined space 48 having a height smaller than that of the upper surface of the second electrode 32. It should be noted that the setting space 48 has an on-off valve for pumping and exhausting, etc., and the structure of the plasma confinement ring 33 is not generally modified to achieve the adjustment of different plasma volumes based on the cost and the functional requirements of the setting space 48.
A movable moving ring assembly positioned above the plasma confinement ring 33 and surrounding the electrode assembly.
A driving mechanism capable of changing the spatial attitude of the moving ring assembly to make the moving ring assembly in a first attitude to expose the gap 46 so as to place a wafer to be etched on the upper surface of the second electrode 32, or to make the moving ring assembly in a second attitude to seal the periphery of the gap 46 and isolate the gap 46 from the set space 48 to form a first plasma distribution space, or to make the moving ring assembly in a third attitude to seal the periphery of the gap 46 and communicate the gap 46 with the set space 48 to form a second plasma distribution space, wherein the second plasma distribution space is larger than the first plasma distribution space in volume.
Wherein the moving ring assembly comprises: a first moving ring 34 and a second moving ring 35; the first moving ring 34 and the second moving ring 35 both surround the electrode assembly and are both located above the plasma confinement ring 33; the first moving ring 34 is used for sealing or releasing the periphery of the gap 46, and the second moving ring 35 is used for sealing or releasing the setting space 48. The second moving ring 35 is provided with a passage for confining plasma but allowing gas to pass through, which may be a gas through hole 66 provided on the second moving ring 35, and when the second moving ring 35 is in the second posture, the second moving ring 35 limits a plasma distribution space, at which time the space between the second moving ring 35 and the plasma confinement ring 33 is no longer plasma-distributed. As can be seen in fig. 5, fig. 5 is a cross-sectional view of a moving ring assembly provided by an embodiment of the present invention.
It should be noted that the position, number and shape of the gas through holes 66 may be arbitrarily set according to the requirement, and the embodiment of the present invention is not particularly limited thereto. The gas through hole 66 is set to have an aspect ratio such that the plasma collides with the side wall of the through hole to be extinguished when the plasma passes through, thereby achieving the purpose of allowing the gas to pass through while confining the plasma.
The first moving ring 34 may be made of quartz, ceramic, or teflon. The second moving ring 35 may be made of any one of quartz, ceramic, or teflon.
Among the conventional plasma etching equipment, the shift ring is an solitary part, when carrying out plasma etching, drives the shift ring through drive piston cylinder and removes, during the shift ring rebound, the clearance exposes, will treat that the sculpture wafer is placed on the second electrode after, drive piston cylinder drives the shift ring and moves down, and the seal clearance, but in order to satisfy the demand of plasma volume size, need shut down and dismantle the shift ring of changing different shapes, the complicated use that is not convenient for of operation.
In the embodiment of the invention, an integral moving ring is divided into the first moving ring 34 and the second moving ring 35, and the first moving ring 34 and the second moving ring 35 are respectively driven to move by arranging different piston type air cylinders, so that under the condition of not needing to stop and replace the moving rings, the volume size of plasma is adjusted by using a plasma etching device, the requirements of different processes on the size of a plasma distribution area are met, the structure is simple, and the operation is easy.
Further, the first moving ring 34 includes a top and a side wall, the top of the first moving ring 34 is disposed opposite to the plasma confinement ring 33, and the side wall of the first moving ring 34 is disposed opposite to the outer side wall of the setting space 48; the second moving ring 35 is disposed opposite to the opening of the setting space 48, below the top of the first moving ring 34, and in the sidewall surrounding area of the first moving ring 34.
In one form, when the moving ring assembly is in the first position, the first moving ring 34 and the second moving ring 35 are both positioned above the gap 46 to expose the gap 46.
Specifically, in the embodiment of the present invention, the driving mechanism drives the first connecting plate 39 and the second connecting plate 40 to move upward, and further drives the first moving ring 34 and the second moving ring 35 to move upward, so as to expose the gap 46, so as to conveniently place the wafer to be etched on the upper surface of the second electrode 32.
In another mode, when the moving ring assembly is in the second position, the second moving ring 35 seals the opening of the setting space 48, and the first moving ring 34 seals the periphery of the gap 46 to form the first plasma distribution space.
Specifically, in the embodiment of the present invention, the driving mechanism drives the first connecting plate 39 and the second connecting plate 40 to move downward, and further drives the first moving ring 34 and the second moving ring 35 to move downward, the second moving ring 35 covers the opening of the setting space 48 in a sealing manner, and the first moving ring 34 seals the periphery of the gap 46, so as to form the first plasma distribution space. As shown in fig. 3.
In another mode, when the moving ring assembly is in the third position, the first moving ring 34 seals the periphery of the gap 46, the gap 46 is communicated with the setting space 48 to form the second plasma distribution space, and the second moving ring 35 is located in the second plasma distribution space, above the opening of the setting space 48, and separated from the opening of the setting space 48.
Specifically, in the embodiment of the present invention, the driving mechanism drives the second connecting plate 40 to move upward, and further drives the second moving ring 35 to move upward, and move to above the opening of the set space 48 and separate from the opening of the set space 48, the first moving ring 34 seals the periphery of the gap 46, and the gap 46 is communicated with the set space 48, so as to form the second plasma distribution space. As shown in fig. 4.
The top of the first moving ring 34 is connected to the driving mechanism through a first connecting rod 44, and the driving mechanism drives the first moving ring 34 to move in a first direction through the first connecting rod 44; the second moving ring 35 is connected to the driving mechanism through a second connecting rod 41, and the driving mechanism drives the second moving ring 35 to move in the first direction through the second connecting rod 41; wherein the second link 41 is connected to the driving mechanism through a through hole penetrating the first moving ring 34; the first direction is a direction in which the first electrode 47 is opposed to the second electrode 32.
In the embodiment of the present invention, the driving mechanism drives the first connecting plate 39 and the first moving ring 34 to move upward through the first connecting rod 44, and drives the driving mechanism to drive the second connecting plate 40 and the second moving ring 35 to move upward through the second connecting rod 41, so as to expose the gap 46, and the moving ring assembly is in the first posture; the driving mechanism drives the first connecting plate 39 and the first moving ring 34 to move downwards through the first connecting rod 44, and drives the driving mechanism above to drive the second connecting plate 40 and the second moving ring 35 to move downwards through the second connecting rod 41, the second moving ring 35 hermetically covers the opening of the set space 48, the first moving ring 34 seals the periphery of the gap 46 to form a first plasma distribution space, and the moving ring assembly is in a second posture; the driving mechanism drives the second connecting plate 40 and the second moving ring 35 to move upwards through the second connecting rod 41, the first moving ring 34 seals the periphery of the gap 46, the gap 46 is communicated with the set space 48 to form a second plasma distribution space, and the moving ring assembly is in a third posture. Wherein the second plasma distribution space is larger than the first plasma distribution space.
Different substrate processing technologies have different requirements on the size of a plasma distribution space, the plasma etching reaction comprises a plasma physical bombardment reaction and a chemical reaction of neutral radicals, the plasma is approximately distributed in a parabolic manner by taking the centers of an upper electrode and a lower electrode as the center between a first electrode 47 and a second electrode 32, the middle area is higher than the edge area, the larger the plasma distribution space is, the gentler the parabolic manner is, and the more uniform the plasma is distributed in the whole processing area. When the chemical reaction in the edge area of the substrate is found to be fast in the substrate processing process, in order to compensate the etching speed of the central area, the plasma distribution needs to be adjusted to be in a state that the middle is high and the edge is low, so that the plasma physical bombardment effect of the central area is improved, the etching speed of the central area is improved, and the surface of the whole substrate is etched uniformly. According to the technical scheme, two moving rings can be utilized to form plasma distribution spaces with different sizes in one reaction cavity, when the process needs to be switched, the process can be realized without replacing the moving rings or the reaction cavity, the universality of equipment is greatly improved, and the working efficiency is improved.
In the embodiment of the present invention, a supporting member 45 is fixed to a sidewall of the first electrode 47; a first bellows 43 connected to the first link 44 is fixed above the support member 45, and a second bellows 38 connected to the second link 41 is fixed above the support member 44. The support member 45 has a through hole, and the first link 44 is connected to the first moving ring 34 through the through hole of the support member 45, and is connected to the support member 45 through the first bellows 43; alternatively, the second link 41 is connected to the second moving ring 35 through a through hole of the support member 45 and is connected to the support member 45 through the second bellows 38. The first bellows 43 and the second bellows 38 are used for stretching and sealing, so that the driving mechanism drives the moving assembly to move up and down.
Wherein the drive mechanism comprises: a first piston cylinder 36 arranged on the first electrode 47, wherein a first connecting plate 39 is fixed above the first piston cylinder 36; a second piston cylinder 37 arranged above the first connecting plate 39, and a second connecting plate 40 fixed above the second piston cylinder 37; the first piston cylinder 36 moves the first moving ring 34 by driving the first connecting plate 39, and moves the second moving ring 35 by driving the second piston cylinder 37 and the second connecting plate 40 above; the second piston cylinder 37 drives the second moving ring 35 to move by driving the second connecting plate 40.
In the embodiment of the present invention, when the moving ring assembly is in the first posture, the first piston cylinder 36 drives the first connecting plate 39 and the first moving ring 34 to move upward through the first connecting rod 44, and drives the second piston cylinder 37 to drive the second connecting plate 40 and the second moving ring 35 to move upward through the second connecting rod 41, so as to expose the gap 46; when the moving ring assembly is in the second posture, the first piston cylinder 36 drives the first connecting plate 39 and the first moving ring 34 to move downwards through the first connecting rod 44, and drives the second piston cylinder 37 to drive the second connecting plate 40 and the second moving ring 35 to move downwards through the second connecting rod 41, the second moving ring 35 hermetically covers the opening of the set space 48, and the first moving ring 34 seals the periphery of the gap 46 to form a first plasma distribution space; when the moving ring assembly is in the third posture, the second piston cylinder 37 drives the second connecting plate 40 and the second moving ring 35 to move upwards through the second connecting rod 41, the first moving ring 34 seals the periphery of the gap 46, and the gap 46 is communicated with the set space 48 to form a second plasma distribution space.
The plasma etching device provided by the embodiment of the invention further comprises: an insulating ring 42 disposed between the second electrode 32 and the plasma confinement ring 33. The insulating ring 42 may be made of quartz, ceramic, or teflon.
As can be seen from the above description, in the plasma etching apparatus provided in the embodiments of the present invention, when performing plasma etching, the spatial posture of the moving ring assembly may be changed by adjusting the driving mechanism, so that the moving ring assembly is in the first posture, and the gap is exposed, so as to place a wafer to be etched on the upper surface of the electrode assembly, or so that the moving ring assembly is in the second posture, and the periphery of the gap is sealed and the gap and the setting space are isolated, so as to form the first plasma distribution space, or so that the moving ring assembly is in the third posture, and the periphery of the gap is sealed and the gap and the setting space are communicated, so as to form the second plasma distribution space, where the second plasma distribution space is larger than the volume of the second plasma distribution space. By applying the plasma etching equipment provided by the embodiment of the invention, the adjustment of the volume of the plasma is realized without stopping the machine and replacing the moving ring assembly, and the plasma etching equipment has a simple structure and is easy to operate.
The embodiments in the present description are described in a progressive manner, or in a parallel manner, or in a combination of a progressive manner and a parallel manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments can be referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in an article or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A plasma etching apparatus, characterized in that the plasma etching apparatus comprises:
an electrode assembly including a first electrode and a second electrode disposed opposite to each other, the first electrode being located above the second electrode with a gap therebetween;
the plasma confinement ring surrounds the second electrode, and the upper surface of the plasma confinement ring is provided with a set space with the height smaller than that of the upper surface of the second electrode;
a movable moving ring assembly positioned above the plasma confinement ring and surrounding the electrode assembly; the shift ring assembly includes: a first moving ring and a second moving ring; the first moving ring and the second moving ring both surround the electrode assembly and are both located above the plasma confinement ring; the first moving ring is used for sealing or releasing the periphery of the gap, and the second moving ring is used for sealing or releasing the set space;
the driving mechanism can change the spatial posture of the moving ring assembly, so that the moving ring assembly is in a first posture, the gap is exposed, a wafer to be etched is placed on the upper surface of the second electrode, or the moving ring assembly is in a second posture, the periphery of the gap is sealed, the gap and the set space are isolated, and a first plasma distribution space is formed, or the moving ring assembly is in a third posture, the periphery of the gap is sealed, the gap and the set space are communicated, and a second plasma distribution space is formed, wherein the second plasma distribution space is larger than the volume of the first plasma distribution space.
2. The plasma etching apparatus of claim 1, wherein if in the first attitude, the first moving ring and the second moving ring are both positioned above the gap to expose the gap;
if the plasma distribution device is in the second posture, the second moving ring covers the opening of the set space in a sealing mode, and the first moving ring seals the periphery of the gap to form a first plasma distribution space;
if the plasma generator is in the third posture, the first moving ring seals the periphery of the gap, the gap is communicated with the set space to form a second plasma distribution space, and the second moving ring is located in the second plasma distribution space, located above the opening of the set space and separated from the opening of the set space.
3. The plasma etching apparatus of claim 1, wherein the first moving ring comprises a top and a sidewall, the top of the first moving ring is disposed opposite to the plasma confinement ring, and the sidewall of the first moving ring is disposed opposite to an outer sidewall of the setting space;
the second moving ring is arranged opposite to the opening of the set space, is positioned below the top of the first moving ring and is positioned in the side wall surrounding area of the first moving ring.
4. The plasma etching apparatus according to claim 3, wherein a top portion of the first moving ring is connected to the driving mechanism through a first link, and the driving mechanism drives the first moving ring to move in a first direction through the first link;
the second moving ring is connected with the driving mechanism through a second connecting rod, and the driving mechanism drives the second moving ring to move in the first direction through the second connecting rod;
the second connecting rod is connected with the driving mechanism through a through hole penetrating through the first moving ring; the first direction is a direction in which the first electrode is opposed to the second electrode.
5. The plasma etching apparatus according to claim 4, wherein a support member is fixed to a side wall of the first electrode;
and a first corrugated pipe connected with the first connecting rod is fixed above the supporting part, and a second corrugated pipe connected with the second connecting rod is fixed above the supporting part.
6. The plasma etching apparatus according to claim 1, wherein the drive mechanism comprises: the first piston type cylinder is arranged on the first electrode, and a first connecting plate is fixed above the first piston type cylinder; the second piston type cylinder is arranged above the first connecting plate, and a second connecting plate is fixed above the second piston type cylinder;
the first piston type cylinder drives the first moving ring to move by driving the first connecting plate, and drives the second moving ring to move by driving the second piston type cylinder above and the second connecting plate;
the second piston type cylinder drives the second movable ring to move by driving the second connecting plate.
7. The plasma etching apparatus of claim 1, wherein the first moving ring is any one of quartz, ceramic, or teflon;
the second moving ring is made of any one of quartz material, ceramic material and Teflon material.
8. The plasma etching apparatus according to any one of claims 1 to 7, further comprising: an insulating ring disposed between the second electrode and the plasma confinement ring.
9. The plasma etching apparatus of claim 8, wherein the insulating ring is any one of quartz, ceramic, or teflon.
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| CN201911418496.3A CN113130284B (en) | 2019-12-31 | 2019-12-31 | Plasma etching equipment |
| TW109140111A TWI794680B (en) | 2019-12-31 | 2020-11-17 | Plasma Etching Equipment |
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| CN201911418496.3A CN113130284B (en) | 2019-12-31 | 2019-12-31 | Plasma etching equipment |
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| CN113130284B true CN113130284B (en) | 2023-01-24 |
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| TW202127502A (en) | 2021-07-16 |
| CN113130284A (en) | 2021-07-16 |
| TWI794680B (en) | 2023-03-01 |
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