CN110289200A - Liner Components and processing chamber - Google Patents
Liner Components and processing chamber Download PDFInfo
- Publication number
- CN110289200A CN110289200A CN201910586098.6A CN201910586098A CN110289200A CN 110289200 A CN110289200 A CN 110289200A CN 201910586098 A CN201910586098 A CN 201910586098A CN 110289200 A CN110289200 A CN 110289200A
- Authority
- CN
- China
- Prior art keywords
- liner
- main body
- ring baffle
- liner main
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3348—Problems associated with etching control of ion bombardment energy
Abstract
The present invention provides a kind of Liner Components and processing chamber, and the Liner Components include: the liner main body of annular, the liner main body ground connection；Ring baffle is electrically insulated with ground, and the inside of the liner main body is arranged in, and can be along the axial movement of the liner main body, to adjust the overlapping area of the periphery wall of the ring baffle and the internal perisporium of the liner main body.Liner Components provided by the invention, liner main body and setting equipped with ground connection are on the inside of liner main body, the ring baffle being electrically insulated with ground, and by ring baffle along the axial movement of liner main body, realize the adjusting of the overlapping area of the periphery wall of ring baffle and the internal perisporium of liner main body, to, the Liner Components are applied to using plasma and carry out prerinse, when the chamber of etching, according to plasma theory, achievable ion energy is adjustable in a certain range, when using plasma processing equipment handles wafer, the plasma body induction damage to wafer can be reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and in particular, to a kind of Liner Components and processing chamber.
Background technique
In semiconductor etching process, when using plasma processing equipment handles wafer, due to plasma
Energy is higher (can achieve 800 electron volts), is easy to cause wafer to damage when handling wafer.Energy of plasma is usual
It is related to the density of plasma, electric field and contact area etc..In the prior art, it can satisfy high etching in plasma density
When rate, since other impact factors are also all fixed values, so energy of plasma is generally also higher, other changes cannot be passed through
The energy of amount plasma is adjusted, so also the damage to wafer can not be reduced by reducing the energy of plasma
Wound.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of Liner Components and work are proposed
Skill chamber.
A kind of Liner Components are provided to achieve the purpose of the present invention, and the Liner Components include:
The liner main body of annular, the liner main body ground connection；
Ring baffle is electrically insulated with ground, and the inside of the liner main body is arranged in, and can be along the liner main body
Axial movement, to adjust the overlapping area of the periphery wall of the ring baffle and the internal perisporium of the liner main body.
Optionally, the ring baffle includes the annular body being arranged on the inside of the liner main body, and is arranged described
The annular bottom plate of annular body bottom；Wherein,
The Liner Components further include dead ring, and the dead ring is described for being circumferentially positioned at liftable pedestal
Annular bottom plate is fixedly connected with the dead ring, and is electrically insulated with the pedestal.
Optionally, the radial spacing between the periphery wall of the ring baffle and the internal perisporium of the liner main body be less than etc.
In 2 millimeters.
Optionally, the entire internal perisporium of the liner main body is covered with the first coarse surface layer made of meltallizing, the annular
The entire internal perisporium of baffle is covered with the second coarse surface layer made of meltallizing.
Optionally, the roughness of the roughness of the described first coarse surface layer and the second coarse surface layer is all larger than equal to 10
Micron.
Optionally, the entire outer surface of the ring baffle is covered with anodic oxide coating.
Optionally, the roughness of the anodic oxide coating is less than or equal to 0.4 millimeter.
Optionally, axial direction of the internal perisporium of the periphery wall of the ring baffle and the liner main body in the liner main body
On overlap length value range in 2cm~7cm.
A kind of processing chamber is provided to achieve the purpose of the present invention, including cavity, setting rising in the cavity
The pedestal and Liner Components of drop, the pedestal is for loading radio frequency, and the liner main body is fixed with the cavity, and the cavity
It is conducted between the liner main body；The ring baffle is arranged on the pedestal and with the pedestal synchronization lifting.
Optionally, the ring baffle includes the annular body being arranged on the inside of the liner main body, and is arranged described
The annular bottom plate of annular body bottom；Wherein,
The Liner Components further include dead ring, and the dead ring is circumferentially positioned on the periphery wall of the pedestal, described
Annular bottom plate is fixedly connected with the dead ring, and is not in contact with the pedestal.
Optionally, the pedestal includes carrying sample platform, the focusing ring being looped around around the load sample platform and being arranged in the load
The insulating part of sample platform bottom, wherein
The insulating part is set between the load sample platform and the ring baffle, for making the load sample platform and the annular
It is electrically insulated between baffle；
The inner periphery overlay area of the lower surface of the annular bottom plate is on the upper surface of the dead ring.
It optionally, further include the even flow plate being arranged at the top of the cavity；Cavity ground connection, and the liner main body with
The cavity is by luring electric coil to conduct；The liner main body is with the even flow plate by luring electric coil to conduct.
The invention has the following advantages:
Liner Components provided by the invention, liner main body and setting equipped with ground connection are on the inside of liner main body and ground electricity is exhausted
The ring baffle of edge, and periphery wall and the liner master of ring baffle are realized along the axial movement of liner main body by ring baffle
The adjusting of the overlapping area of the internal perisporium of body, to change the contact area of plasma.To which the Liner Components are applied to adopt
With plasma carry out prerinse, etching chamber when, according to plasma theory, when carrying on sample platform (platform of carrying product)
Plasma arc voltage and the plasma arc voltage of Liner Components ground terminal difference (i.e. load sample platform on back bias voltage Vdc) absolute value become larger
When, ion energy can become larger, so that it is adjustable in a certain range to realize ion energy, in using plasma processing equipment
When handling wafer, the plasma body induction damage to wafer can be reduced.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of Liner Components provided in an embodiment of the present invention and processing chamber；
Fig. 2 is the structural schematic diagram of ring baffle provided in this embodiment.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The Liner Components and processing chamber of offer are described in detail.
As shown in Figure 1, can be applied to the processing chamber in semiconductor etching process the present embodiment provides a kind of Liner Components
In (chamber that such as using plasma carries out prerinse, etching), which includes the liner main body 10 and annular of annular
Baffle 20, wherein liner main body 10 be grounded, ring baffle 20 be electrically insulated, and ring baffle 20 setting in liner main body 10
Inside, and can be along the axial movement of liner main body 10, in periphery wall and the liner main body 10 to adjust ring baffle 20
The overlapping area of peripheral wall.
Liner Components provided in this embodiment, liner main body 10 equipped with ground connection and setting 10 inside of liner main body, with
The ring baffle 20 of ground electrical isolation, and ring baffle 20 is realized along the axial movement of liner main body 10 by ring baffle 20
The adjusting of the overlapping area of periphery wall and the internal perisporium of liner main body 10, to change the contact area of plasma.To by this
Liner Components be applied to using plasma carry out prerinse, etching chamber when, according to plasma theory, when carrying sample platform 40
The difference of the plasma arc voltage of plasma arc voltage and Liner Components ground terminal on (platform of carrying product) is (i.e. negative in load sample platform 40
Bias Vdc) absolute value when becoming larger, ion energy can become larger, and carry the size of back bias voltage Vdc in sample platform 40 and carry sample platform 40
Area, plasma contact area have following relationship:Vdc=V1-V2, V1 is to carry in sample platform 40 in formula
Plasma arc voltage, V2 be Liner Components ground terminal plasma arc voltage, S1 be carry 40 area of sample platform, S2 be plasma ground plane
Product (in figure shown in solid lines), β are constant, representative value desirable 3.Due to ring baffle 20 be electrically insulated, the plasma bodily form
At radio-frequency current do not flow through ring baffle 20, when ring baffle 20 rises, contact area S2 can reduce, to carry sample platform 40
On back bias voltage V1 reduce, the ion energy accelerated through this back bias voltage can also be reduced, to realize ion energy certain
It is adjustable in range, when using plasma processing equipment handles wafer, it can reduce and the plasma of wafer is lured
Lead damage.
It is carried out it should be noted that Liner Components provided in this embodiment can be, but not limited to apply in using plasma
Prerinse, etching chamber, apply also for the processing chamber that other any need are applied to above-mentioned Liner Components, the present embodiment
This is not especially limited.In addition, theoretically, ring baffle 20 can also be grounded, the setting of liner main body 10 is kept off in annular
20 inside of plate, and be electrically insulated with ground, and can be sent out in axial direction (up and down direction in figure) between ring baffle 20 and liner main body 10
Raw relative motion, either liner main body 10 is fixed, ring baffle 20 is moved axially with respect to liner main body 10, it can also
To be that ring baffle 20 is fixed, 10 opposed annular baffle 20 of liner main body is axially moved.
In a specific embodiment, as shown in Fig. 2, ring baffle 20 includes the annular that 10 inside of liner main body is arranged in
Main body, and the annular bottom plate of annular body bottom is set.Wherein, Liner Components further include dead ring 31, and dead ring 31 is used for
It is circumferentially positioned on liftable pedestal, annular bottom plate is fixedly connected with dead ring 31, and is electrically insulated with pedestal.In this way, passing through
It is fixedly connected with dead ring 31, ring baffle 20 can be arranged on liftable pedestal, suspend so that ring baffle 20 is in
State had not only realized the moving along 10 axial direction of liner main body of ring baffle 20, but also has realized the electrical isolation of ring baffle 20, prevented
Radio-frequency current flows back from it.Specifically, liftable pedestal can be connect with the radio frequency component for generating plasma, in motor
Under driving, while driving ring baffle 20, carrying sample platform 40 and radio frequency component progress elevating movement.More specifically,
It should be noted that above-mentioned ring baffle 20 and its mounting structure are that one kind is preferably carried out mode, it can also
To be in a manner of other structures, the present embodiment is not especially limited this, for example, ring baffle 20 can be by along axial, electric
The guide rail of insulation carries out installation and opposite liner main body 10 moves, which can drive ring baffle 20 under the drive of the motor
Along the axial movement of liner main body 10.
Preferably, the radial spacing between the periphery wall of ring baffle 20 and the internal perisporium of liner main body 10 is less than or equal to 2
Millimeter.In this way, ensure that the gap between the periphery wall of ring baffle 20 and the internal perisporium of liner main body 10 is produced without plasma
It is raw so that the lap of the periphery wall of the internal perisporium of liner main body 10 and ring baffle 20 not with Plasma contact,
Can not collected current, then realize the reduction of plasma contact area.
In another specific embodiment, the entire internal perisporium of liner main body 10 is covered with the first rough surface made of meltallizing
Layer, the entire internal perisporium of ring baffle 20 are covered with the second coarse surface layer made of meltallizing.In liner main body 10 and ring baffle
20 entire internal perisporium is respectively provided with coarse surface layer, may make etch by-products in the inner surface of liner main body 10 and ring baffle 20
With preferable adhesion, prevents particle from generating and pollute wafer etc. to be processed.Preferably, it is imitated to obtain preferably adherency
The roughness of fruit, the roughness of the first coarse surface layer and the second coarse surface layer is all larger than equal to 10 microns.
In another specific embodiment, the entire outer surface of ring baffle 20 is covered with anodic oxide coating.By in ring
Relatively smooth anodic oxide coating is arranged in the outer surface of shape baffle 20, on the one hand can be to avoid the periphery wall surface of ring baffle 20
It generates arcing phenomena (referring to the improper direct electric discharge phenomena generated between two electrode of high-low voltage, be commonly called as " striking sparks "), another party
Face can also enhance surface hardness, the wearability of ring baffle 20 when the ring baffle 20 of aluminium (or aluminium alloy) material
Deng the service life of extension ring baffle 20.Preferably, the roughness of the second coarse surface layer is less than or equal to 0.4 millimeter.
In addition, the periphery wall of ring baffle 20 is overlapping in the axial direction of liner main body 10 with the internal perisporium of liner main body 10
The value range of length is in 2cm~7cm.Since the installation of Liner Components is confined in processing chamber, space is limited, annular gear
Plate 20 is also limited in axial move distance with respect to liner main body 10, in order to save space and convenient for the adjusting to ion energy,
Can be adjustable in a certain range by the periphery wall of ring baffle 20 and the overlapping area setting of the internal perisporium of liner main body 10,
Preferably, the periphery wall that ring baffle 20 is arranged is overlapping long in the axial direction of liner main body 10 with the internal perisporium of liner main body 10
The value range of degree is 2cm~7cm.Specifically, liftable pedestal can be used bellows 34 and connect with the inner wall of processing chamber,
The lifting of pedestal is realized by the dilatation of bellows 34.
To achieve the purpose of the present invention, based on inventive concept identical with the embodiment of above-mentioned Liner Components, the present embodiment
A kind of processing chamber is also provided, including cavity, the liftable pedestal and Liner Components of setting in the cavity, pedestal is for loading
Radio frequency, liner main body 10 are fixed with cavity, and are conducted between cavity and liner main body 10；Ring baffle is arranged on the base simultaneously
Be above-mentioned Liner Components with pedestal synchronization lifting Liner Components, even flow plate is arranged in the top of liner main body 10, and with liner master
Body 10 conducts, and the working principle and working method of the processing chamber are referring to the embodiment of above-mentioned Liner Components, and the present embodiment is not
It repeats again.
In a specific embodiment, ring baffle 20 includes the annular body that 10 inside of liner main body is arranged in, and is set
Set the annular bottom plate in annular body bottom；Wherein,
Liner Components further include dead ring 31, and dead ring 31 is circumferentially positioned on the periphery wall of pedestal, annular bottom plate and absolutely
Edge ring 31 is fixedly connected, and is not in contact with pedestal.
More specifically, pedestal includes carrying sample platform 40, being looped around the focusing ring 32 carried around sample platform 40 and be arranged in load sample platform
The insulating part 33 of 40 bottoms, wherein insulating part 33, which is set to, to be carried between sample platform 40 and ring baffle 20, carries sample platform 40 and ring for making
It is electrically insulated between shape baffle 20；The inner periphery overlay area of the lower surface of annular bottom plate is on the upper surface of dead ring 31.Its
In, the metal plate for connecting with bellows 34 can also be added in 33 bottom of insulating part, prevent insulating part 33 directly and ripple
Pipe 34 connects, frangible phenomenon caused by under the percussion of bellows 34.
It should be noted that if the processing chamber is that using plasma processing equipment carries out wafer (or other products)
The processing chamber of processing, then the processing chamber can also include bleeding point and radio frequency component etc., and radio frequency component includes radio-frequency match
Device 52, radio-frequency power supply 51 etc..
In another specific embodiment, which can also include the even flow plate being arranged at the top of cavity；It can also
To enable cavity be grounded, and liner main body 10 and cavity are by luring electric coil to conduct；Setting even flow plate can make air pressure in reaction chamber
Distribution it is more uniform, liner main body 10 and even flow plate are by luring electric coil to conduct, to guarantee good ground connection.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (12)
1. a kind of Liner Components, which is characterized in that the Liner Components include:
The liner main body of annular, the liner main body ground connection；
Ring baffle is electrically insulated with ground, and the inside of the liner main body is arranged in, and can be along the axis of the liner main body
To movement, to adjust the overlapping area of the periphery wall of the ring baffle and the internal perisporium of the liner main body.
2. Liner Components according to claim 1, which is characterized in that the ring baffle includes being arranged in the liner master
The annular body of internal side, and the annular bottom plate of the annular body bottom is set；Wherein,
The Liner Components further include dead ring, and the dead ring is for being circumferentially positioned at liftable pedestal, the annular
Bottom plate is fixedly connected with the dead ring, and is electrically insulated with the pedestal.
3. Liner Components according to claim 1, which is characterized in that the periphery wall of the ring baffle and the liner master
Radial spacing between the internal perisporium of body is less than or equal to 2 millimeters.
4. Liner Components according to claim 1, which is characterized in that the entire internal perisporium of the liner main body is covered with molten
First coarse surface layer made of penetrating, the entire internal perisporium of the ring baffle are covered with the second coarse surface layer made of meltallizing.
5. Liner Components according to claim 4, which is characterized in that the roughness of the first coarse surface layer and described
The roughness of two coarse surface layers is all larger than equal to 10 microns.
6. Liner Components according to claim 1, which is characterized in that the entire outer surface of the ring baffle is covered with sun
Pole oxide layer.
7. Liner Components according to claim 6, which is characterized in that the roughness of the anodic oxide coating is less than or equal to
0.4 millimeter.
8. Liner Components according to claim 1, which is characterized in that the periphery wall of the ring baffle and the liner master
The value range of overlap length of the internal perisporium of body in the axial direction of the liner main body is in 2cm~7cm.
9. a kind of processing chamber, including cavity, the liftable pedestal and Liner Components of setting in the cavity, the pedestal
For loading radio frequency, which is characterized in that the Liner Components are the described in any item Liner Components of claim 1-8, described interior
Lining main body is fixed with the cavity, and is conducted between the cavity and the liner main body；The ring baffle is arranged in institute
It states on pedestal and with the pedestal synchronization lifting.
10. processing chamber according to claim 9, which is characterized in that the ring baffle includes being arranged in the liner
Annular body on the inside of main body, and the annular bottom plate of the annular body bottom is set；Wherein,
The Liner Components further include dead ring, and the dead ring is circumferentially positioned on the periphery wall of the pedestal, the annular
Bottom plate is fixedly connected with the dead ring, and is not in contact with the pedestal.
11. processing chamber according to claim 10, which is characterized in that the pedestal include carry sample platform, be looped around it is described
It carries the focusing ring around sample platform and the insulating part for carrying sample platform bottom is set, wherein
The insulating part is set between the load sample platform and the ring baffle, for making the load sample platform and the ring baffle
Between be electrically insulated；
The inner periphery overlay area of the lower surface of the annular bottom plate is on the upper surface of the dead ring.
12. processing chamber according to claim 9, which is characterized in that further include the uniform flow being arranged at the top of the cavity
Plate；Cavity ground connection, and the liner main body with the cavity by luring electric coil to conduct；The liner main body with it is described
Even flow plate is by luring electric coil to conduct.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910586098.6A CN110289200B (en) | 2019-07-01 | 2019-07-01 | Lining assembly and process chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910586098.6A CN110289200B (en) | 2019-07-01 | 2019-07-01 | Lining assembly and process chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110289200A true CN110289200A (en) | 2019-09-27 |
| CN110289200B CN110289200B (en) | 2022-11-25 |
Family
ID=68021580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910586098.6A Active CN110289200B (en) | 2019-07-01 | 2019-07-01 | Lining assembly and process chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110289200B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110592553A (en) * | 2019-10-24 | 2019-12-20 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor equipment |
| CN111471980A (en) * | 2020-04-15 | 2020-07-31 | 北京北方华创微电子装备有限公司 | Reaction chamber suitable for remote plasma cleaning, deposition equipment and cleaning method |
| CN113130284A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| CN113745083A (en) * | 2020-05-28 | 2021-12-03 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN114361000A (en) * | 2022-01-04 | 2022-04-15 | 北京北方华创微电子装备有限公司 | Semiconductor processing chamber and semiconductor processing equipment |
| CN114446760A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
| TWI817230B (en) * | 2020-12-28 | 2023-10-01 | 大陸商中微半導體設備（上海）股份有限公司 | Radio frequency adjustment device, plasma processing equipment and radio frequency electric field adjustment method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040129221A1 (en) * | 2003-01-08 | 2004-07-08 | Jozef Brcka | Cooled deposition baffle in high density plasma semiconductor processing |
| US20160155614A1 (en) * | 2014-11-28 | 2016-06-02 | Semes Co., Ltd. | Support unit and substrate treating apparatus including the same |
| CN107578977A (en) * | 2017-09-27 | 2018-01-12 | 北京北方华创微电子装备有限公司 | Reaction chamber and capacitance coupling plasma equipment |
| CN108456860A (en) * | 2017-02-22 | 2018-08-28 | 北京北方华创微电子装备有限公司 | A kind of deposition chambers and film deposition device |
| CN208478281U (en) * | 2018-08-01 | 2019-02-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma apparatus |
-
2019
- 2019-07-01 CN CN201910586098.6A patent/CN110289200B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040129221A1 (en) * | 2003-01-08 | 2004-07-08 | Jozef Brcka | Cooled deposition baffle in high density plasma semiconductor processing |
| US20160155614A1 (en) * | 2014-11-28 | 2016-06-02 | Semes Co., Ltd. | Support unit and substrate treating apparatus including the same |
| CN108456860A (en) * | 2017-02-22 | 2018-08-28 | 北京北方华创微电子装备有限公司 | A kind of deposition chambers and film deposition device |
| CN107578977A (en) * | 2017-09-27 | 2018-01-12 | 北京北方华创微电子装备有限公司 | Reaction chamber and capacitance coupling plasma equipment |
| CN208478281U (en) * | 2018-08-01 | 2019-02-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma apparatus |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110592553A (en) * | 2019-10-24 | 2019-12-20 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor equipment |
| CN110592553B (en) * | 2019-10-24 | 2021-11-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor equipment |
| CN113130284A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| CN113130284B (en) * | 2019-12-31 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| CN111471980A (en) * | 2020-04-15 | 2020-07-31 | 北京北方华创微电子装备有限公司 | Reaction chamber suitable for remote plasma cleaning, deposition equipment and cleaning method |
| CN113745083A (en) * | 2020-05-28 | 2021-12-03 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN113745083B (en) * | 2020-05-28 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| TWI817230B (en) * | 2020-12-28 | 2023-10-01 | 大陸商中微半導體設備（上海）股份有限公司 | Radio frequency adjustment device, plasma processing equipment and radio frequency electric field adjustment method |
| CN114361000A (en) * | 2022-01-04 | 2022-04-15 | 北京北方华创微电子装备有限公司 | Semiconductor processing chamber and semiconductor processing equipment |
| CN114361000B (en) * | 2022-01-04 | 2024-04-16 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor process equipment |
| CN114446760A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
| CN114446760B (en) * | 2022-01-26 | 2024-02-27 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110289200B (en) | 2022-11-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110289200A (en) | Liner Components and processing chamber | |
| KR101456810B1 (en) | Plasma processing apparatus | |
| US8114246B2 (en) | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same | |
| CN101048856B (en) | Yttria insulator ring for use inside a plasma chamber | |
| CN101546697B (en) | Plasma processing apparatus | |
| CN100392791C (en) | Techniques for improving etch rate uniformity | |
| KR102036950B1 (en) | Plasma processing method | |
| US20100193130A1 (en) | Plasma processing apparatus | |
| JPH05171470A (en) | Ething or coating apparatus | |
| WO2019062573A1 (en) | Process chamber and capacitively coupled plasma apparatus | |
| JP2002016045A (en) | Plasma processing apparatus | |
| JP2011253916A (en) | Plasma processing apparatus | |
| KR20150125614A (en) | Real-time edge encroachment control for wafer bevel | |
| JP2014017292A (en) | Plasma processing apparatus, and plasma processing method | |
| CN101441981A (en) | Stereo air exhaust loop and plasma processing apparatus | |
| CN111383887A (en) | Device and method for improving plasma etching uniformity | |
| US11887822B2 (en) | Edge ring and etching apparatus | |
| CN104108053A (en) | Plasma and pulse discharge composite polishing method for large-scale complicated metal surface | |
| WO2023185500A1 (en) | Semiconductor processing equipment | |
| CN102098862A (en) | Lower electrode device and plasma processing equipment using same | |
| CN110396664B (en) | Grounding ring, chamber and physical vapor deposition equipment | |
| CN107995932B (en) | Magnetron sputtering cathode system | |
| TWI817229B (en) | Lower electrode element, plasma processing device and method of replacing focus ring | |
| US11875969B2 (en) | Process chamber with reduced plasma arc | |
| TW201338090A (en) | Electrostatic sucking disc |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |