CN111383887A - Device and method for improving plasma etching uniformity - Google Patents
Device and method for improving plasma etching uniformity Download PDFInfo
- Publication number
- CN111383887A CN111383887A CN201811612742.4A CN201811612742A CN111383887A CN 111383887 A CN111383887 A CN 111383887A CN 201811612742 A CN201811612742 A CN 201811612742A CN 111383887 A CN111383887 A CN 111383887A
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- wafer
- direct current
- edge
- plasma etching
- etching rate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32889—Connection or combination with other apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
The invention discloses a device and a method for improving plasma etching uniformity. The device comprises a direct current power supply and a filter, wherein one end of the direct current power supply is grounded, the other end of the direct current power supply is connected with a focusing ring of a lower electrode of a plasma etching system through the filter, direct current voltage is loaded on the focusing ring, the size and the polarity of the direct current power supply are adjustable, and the filter is used for filtering alternating current components in direct current. The direct current voltage is loaded on a focusing ring of a lower electrode of a plasma etching system, and the polarity and the magnitude of the direct current voltage are adjusted, so that the etching rate of the edge part of the wafer is consistent with the etching rate of the center part of the wafer. The method is simple and easy to implement, and can effectively improve the etching uniformity and improve the production efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a device and a method for improving plasma etching uniformity.
Background
In semiconductor wafer fabrication, plasma etching is used to etch conductive and dielectric materials. In the semiconductor process, the etching uniformity directly affects the yield of the equipment, so the etching uniformity has become an important requirement and is one of important parameters for measuring the performance of the equipment.
With the development of integrated circuits, the diameter of a wafer is larger and smaller, and the critical dimension is smaller and smaller, the designed structure is closer to the edge, and it is more and more difficult to ensure the uniformity of the critical dimension on the whole wafer. For example, as wafer sizes increase from 200mm to 300mm, the edge loss of the wafer is less than 2mm in diameter. In order to improve the etching uniformity, especially the etching uniformity of the edge of the wafer, many efforts have been made to surround the processed wafer with a layer of material, which has physical properties generally similar to the processed wafer and is commonly referred to as a focus ring in the industry, and by placing the focus ring, the size of the processed wafer is similarly "enlarged", so as to change the electric field distribution at the edge of the processed wafer, and more ions can be introduced into the edge portion, thereby improving the etching uniformity at the edge of the processed wafer. Conventionally, the structure and material of the focus ring are mostly optimized, for example, materials with different dielectric constants are used; adjusting the structural size of the focusing ring, and the like. However, currently, a single plasma etching apparatus needs to be matched with a material or a structure of the focus ring, and the process stability is affected by opening a cavity and replacing the focus ring. For the same plasma etching device, when processing a wafer, due to diversified process requirements, when the etching gas composition changes, the etching rate of the edge part of the processed wafer is larger or smaller, and it is difficult to obtain good edge uniformity through the adjustment of the process composition parameters.
Disclosure of Invention
In order to solve the problems, the invention discloses a method for improving the plasma etching uniformity, which loads direct current voltage on a focusing ring of a lower electrode of a plasma etching system, and enables the etching rate of the edge part of a wafer to be consistent with the etching rate of the center part of the wafer by adjusting the polarity and the magnitude of the direct current voltage.
In the method for improving the plasma etching uniformity of the invention, preferably, the direct current voltage is at
10V to 500V.
In the method for improving the plasma etching uniformity, preferably, when the etching rate of the edge part of the wafer is higher than that of the center part of the wafer, a positive voltage is applied to the focusing ring, so that the electric field intensity of a sheath layer at the edge part of the wafer is reduced, and the etching rate at the edge part of the wafer is further reduced.
In the method for improving the plasma etching uniformity, preferably, when the etching rate of the edge part of the wafer is smaller than that of the center part of the wafer, the negative voltage is applied to the focusing ring, so that the electric field intensity of a sheath layer at the edge part of the wafer is enhanced, and the etching rate at the edge part of the wafer is further improved.
The invention also discloses a device for improving the plasma etching uniformity, which comprises: the plasma etching system comprises a direct current power supply and a filter, wherein one end of the direct current power supply is grounded, the other end of the direct current power supply is connected with a focusing ring of a lower electrode of the plasma etching system through the filter, direct current voltage is loaded on the focusing ring, the size and the polarity of the direct current power supply are adjustable, and the filter is used for filtering alternating current components in direct current.
In the apparatus for improving plasma etching uniformity of the present invention, preferably, the dc voltage is between 10V and 500V.
In the apparatus for improving plasma etching uniformity of the present invention, preferably, the material of the focus ring is hard anodized aluminum or silicon carbide.
Drawings
FIG. 1 is a schematic diagram of a plasma etching system.
FIG. 2 is a schematic illustration of ion trajectories at the edge of a wafer before a DC voltage is applied.
FIG. 3 is a schematic view of a plasma etching system after being equipped with an apparatus for improving plasma etching uniformity.
FIG. 4 is a schematic view of ion trajectories at the edge of a wafer after applying a DC voltage.
In the figure:
102-a reaction chamber; 104-wafer; 108-focus ring; 112-air homogenizing disc; 114-lower electrode; 116-lower electrode radio frequency power supply; 118-a first matcher; upper electrode 120; 122-upper electrode radio frequency power supply; 124-a second matcher; 128-exhaust port; 204-a direct current power supply; 208 filter.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly and completely understood, the technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Furthermore, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described below in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details. Unless otherwise specified below, each part in the device may be formed of a material known to those skilled in the art, or a material having a similar function developed in the future may be used.
FIG. 1 is a schematic diagram of a plasma etching system. The plasma etching system, as shown in fig. 1, mainly includes a reaction chamber 102, a lower electrode 114, a focus ring 108, a lower electrode rf power source 116, an upper electrode 120, an upper electrode rf power source 122, a gas distribution plate 112, a gas flow control system, a vacuum system, etc. The reaction chamber 102 is typically made of aircraft aluminum, and has a hard surface anodized and reliably grounded. The lower electrode RF power source 116 applies RF to the lower electrode 114 via a first match 118, typically at a RF frequency of 13.56 MHz. The lower electrode 114 is generally made of an aircraft aluminum material, and the surface of the lower electrode is subjected to hard anodizing treatment or other composite materials. The upper electrode RF power source 122 is connected to the upper electrode 120 through a second matcher 124. The reactant gases enter the reaction chamber 102 through the gas distribution plate 112. The gas homogenizing disc is generally made of ceramic, quartz and the like. Under a certain cavity pressure and under the excitation action of a radio frequency power supply, gas is promoted to generate glow discharge to generate plasma. The wafer 104 is placed on the upper surface of the lower electrode 114 and held by mechanical means or electrostatic attraction. In order to reduce the discontinuity of the edge portion of the processed wafer during etching the processed wafer, and particularly to improve the uniformity of the edge portion of the processed wafer, a focus ring 108 is disposed around the wafer and the lower electrode. The vacuum maintenance of the whole system is controlled by a vacuum valve group, mainly comprising a dry pump, a molecular pump, a control valve and the like, and the waste gas generated in the reaction is discharged into a tail gas treatment device through an exhaust port 128.
In a plasma etching system, a radio frequency power supply is loaded on a lower electrode, the lower electrode generates negative self-bias voltage relative to the ground due to the fact that electrons which move rapidly leave a plasma bombardment electrode, and after a certain amount of negative charges are accumulated around the electrode, the electrons are repelled by the electrode to generate an ion sheath layer with positive ion charges. The distribution of the sheath electric field of the plasma etching system is schematically shown in fig. 1. In the plasma etching process, the lower electrode is negatively charged, positive ions are attracted and accelerated to bombard the surface of the processed wafer, but due to the change of the structure size, the distribution of the sheath electric field is not uniform at the edge part of the processed wafer, the sheath electric field is bent rapidly, so that the ion reaching track at the edge part of the processed wafer is not uniform, the track at the edge part is bent, as shown in fig. 2, the material on the side surface or the back surface of the edge of the processed wafer is etched, and the edge etching rate is high or low, so that the edge etching is not uniform.
Fig. 3 is a schematic view of the apparatus for improving plasma etching uniformity according to the present invention after being assembled in a plasma etching system. As shown in fig. 3, the apparatus for improving plasma etching uniformity of the present invention includes a dc power supply 204 and a filter 208. One end of the dc power supply 204 is connected to ground, the other end is connected to a filter 208, and the filter 208 is connected to the focus ring 108 of the lower electrode 114 of the plasma etching system. The dc power supply 204 applies a dc voltage to the focus ring 108, and the dc power supply 204 is adjustable in magnitude and polarity. The filter 208 is composed of an inductor, a resistor, and the like. The ac component of the dc is filtered sufficiently by the filter 208. The material of the focusing ring is hard anode alumina or silicon carbide and the like.
In the etching process, the lower electrode is negatively charged, the distribution of an electric field of an ion sheath layer is influenced by adjusting the size and the polarity of the voltage loaded on the focusing ring, ions can be ensured to vertically bombard the surface material of the wafer, and the uniformity and the pattern morphology consistent with the central area of the wafer are obtained. When the focusing ring is loaded with negative voltage, the edge coverage range of the ion sheath electric field is enlarged, the sheath electric field intensity at the edge part is enhanced relative to the sheath electric field intensity at the central part of the wafer, more ions are attracted to bombard the material at the edge part of the processed wafer nearly vertically, and the etching rate at the edge part is increased. Conversely, when a positive voltage is applied to the focus ring, the edge coverage of the ion sheath electric field is reduced, which results in a reduction in the sheath electric field strength at the edge of the wafer relative to the sheath electric field strength at the center of the wafer, a reduction in the ability to attract ions, and a reduction in the etching rate at the edge of the wafer. The magnitude of the loaded direct current voltage is generally between 10V and 500V, and is increased or decreased by 1V at the minimum, and the adjustment is carried out according to the etching composition of the process. After the dc voltage is applied, the sheath electric field distribution at the wafer edge is uniform as shown in fig. 3. The ion trajectories at the edge portion of the wafer are shown in fig. 4. As shown in fig. 4, more ions can reach the surface of the wafer vertically at the edge of the wafer, thereby improving the etching uniformity at the edge of the wafer.
When the device for improving the plasma etching uniformity is used for adjusting the etching uniformity, whether the etching rate of the edge part of the wafer is the same as that of the center part of the wafer is judged. When the etching rate of the edge part of the wafer is judged to be larger than that of the center part of the wafer, a positive voltage is applied to the focusing ring, so that the electric field intensity of the edge sheath layer is reduced, the etching rate of the edge of the wafer is further reduced, the etching rate of the edge of the wafer changes along with the change of the voltage in a monotonous way, namely, the etching rate of the edge of the wafer is reduced along with the increase of the voltage until the etching rate of the edge of the wafer is approximately consistent with that of the center part of the wafer. Specifically, firstly, the voltage is adjusted by integral multiple of 10, when the process parameter is close to the target value (the etching uniformity of the whole wafer is between +/-3% and +/-6%), then the voltage is finely adjusted by integral multiple of 1 until the etching uniformity of the whole wafer is controlled within the target range. Similarly, when the etching rate of the edge of the wafer is judged to be smaller than that of the central area of the wafer, negative voltage is applied to the focusing ring, so that the electric field intensity of the edge sheath layer is enhanced, and the etching rate of the edge of the wafer is further improved until the etching rate of the edge of the wafer is approximately consistent with that of the central area of the wafer.
The device and the method for improving the plasma etching uniformity are simple and feasible, the etching uniformity can be realized only by changing the size and the polarity of the direct current voltage, and the structure or the material of a focusing ring is not required to be changed by frequently opening a chamber due to different etching components, so that the production efficiency is effectively improved.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (7)
1. A method for improving plasma etching uniformity is characterized in that,
and loading direct-current voltage on a focusing ring of a lower electrode of the plasma etching system, and adjusting the polarity and the magnitude of the direct-current voltage to enable the etching rate of the edge part of the wafer to be consistent with the etching rate of the center part of the wafer.
2. The method of improving plasma etch uniformity of claim 1,
the direct current voltage is between 10V and 500V.
3. The method of claim 1, wherein when the etching rate at the edge of the wafer is higher than the etching rate at the center of the wafer, the positive voltage is applied to the focus ring to reduce the electric field intensity of the sheath at the edge of the wafer, thereby reducing the etching rate at the edge of the wafer.
4. The method of improving plasma etch uniformity of claim 1,
when the etching rate of the edge part of the wafer is smaller than that of the center part of the wafer, negative voltage is applied to the focusing ring, so that the electric field intensity of a sheath layer at the edge part of the wafer is enhanced, and the etching rate of the edge part of the wafer is further improved.
5. An apparatus for improving plasma etching uniformity,
the method comprises the following steps: the plasma etching system comprises a direct current power supply and a filter, wherein one end of the direct current power supply is grounded, the other end of the direct current power supply is connected with a focusing ring of a lower electrode of the plasma etching system through the filter, direct current voltage is loaded on the focusing ring, the size and the polarity of the direct current power supply are adjustable, and the filter is used for filtering alternating current components in direct current.
6. The apparatus for improving plasma etch uniformity of claim 5,
the direct current voltage is between 10V and 500V.
7. The apparatus for improving plasma etch uniformity of claim 5,
the focusing ring is made of hard anodized aluminum or silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811612742.4A CN111383887A (en) | 2018-12-27 | 2018-12-27 | Device and method for improving plasma etching uniformity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811612742.4A CN111383887A (en) | 2018-12-27 | 2018-12-27 | Device and method for improving plasma etching uniformity |
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| CN111383887A true CN111383887A (en) | 2020-07-07 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185810A (en) * | 2020-09-29 | 2021-01-05 | 华虹半导体(无锡)有限公司 | Etching machine and method for improving working environment difference of different etching areas of etching machine |
| CN112736015A (en) * | 2020-12-31 | 2021-04-30 | 拓荆科技股份有限公司 | Apparatus for adjusting plasma profile in a processing chamber and method for controlling the same |
| CN113936988A (en) * | 2021-10-12 | 2022-01-14 | 大连理工大学 | Edge plasma distribution adjusting device |
| WO2024040520A1 (en) * | 2022-08-25 | 2024-02-29 | Beijing Naura Microelectronics Equipment Co., Ltd. | Segmented focus ring for plasma semiconductor processing and processing tool configured to use the segmented focus ring |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070224709A1 (en) * | 2006-03-23 | 2007-09-27 | Tokyo Electron Limited | Plasma processing method and apparatus, control program and storage medium |
| US7544270B2 (en) * | 2005-11-14 | 2009-06-09 | Infineon Technologies Ag | Apparatus for processing a substrate |
| CN101512734A (en) * | 2006-06-30 | 2009-08-19 | 朗姆研究公司 | Apparatus for substrate processing and methods therefor |
| CN101720501A (en) * | 2007-06-28 | 2010-06-02 | 朗姆研究公司 | Methods and apparatus for substrate processing |
| JP4486372B2 (en) * | 2003-02-07 | 2010-06-23 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN101908460A (en) * | 2009-06-02 | 2010-12-08 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN103811247A (en) * | 2014-02-17 | 2014-05-21 | 清华大学 | Focusing ring for plasma etching and plasma etching device with same |
| CN104205299A (en) * | 2012-04-26 | 2014-12-10 | 应用材料公司 | Methods and apparatus for controlling substrate uniformity |
| CN104217914A (en) * | 2013-05-31 | 2014-12-17 | 中微半导体设备(上海)有限公司 | Plasma processing device |
| US9536711B2 (en) * | 2007-03-30 | 2017-01-03 | Lam Research Corporation | Method and apparatus for DC voltage control on RF-powered electrode |
-
2018
- 2018-12-27 CN CN201811612742.4A patent/CN111383887A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4486372B2 (en) * | 2003-02-07 | 2010-06-23 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US7544270B2 (en) * | 2005-11-14 | 2009-06-09 | Infineon Technologies Ag | Apparatus for processing a substrate |
| US20070224709A1 (en) * | 2006-03-23 | 2007-09-27 | Tokyo Electron Limited | Plasma processing method and apparatus, control program and storage medium |
| CN101512734A (en) * | 2006-06-30 | 2009-08-19 | 朗姆研究公司 | Apparatus for substrate processing and methods therefor |
| US9536711B2 (en) * | 2007-03-30 | 2017-01-03 | Lam Research Corporation | Method and apparatus for DC voltage control on RF-powered electrode |
| CN101720501A (en) * | 2007-06-28 | 2010-06-02 | 朗姆研究公司 | Methods and apparatus for substrate processing |
| CN101908460A (en) * | 2009-06-02 | 2010-12-08 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN104205299A (en) * | 2012-04-26 | 2014-12-10 | 应用材料公司 | Methods and apparatus for controlling substrate uniformity |
| CN104217914A (en) * | 2013-05-31 | 2014-12-17 | 中微半导体设备(上海)有限公司 | Plasma processing device |
| CN103811247A (en) * | 2014-02-17 | 2014-05-21 | 清华大学 | Focusing ring for plasma etching and plasma etching device with same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185810A (en) * | 2020-09-29 | 2021-01-05 | 华虹半导体(无锡)有限公司 | Etching machine and method for improving working environment difference of different etching areas of etching machine |
| CN112185810B (en) * | 2020-09-29 | 2022-07-05 | 华虹半导体(无锡)有限公司 | Etching machine and method for improving working environment difference of different etching areas of etching machine |
| CN112736015A (en) * | 2020-12-31 | 2021-04-30 | 拓荆科技股份有限公司 | Apparatus for adjusting plasma profile in a processing chamber and method for controlling the same |
| CN113936988A (en) * | 2021-10-12 | 2022-01-14 | 大连理工大学 | Edge plasma distribution adjusting device |
| WO2024040520A1 (en) * | 2022-08-25 | 2024-02-29 | Beijing Naura Microelectronics Equipment Co., Ltd. | Segmented focus ring for plasma semiconductor processing and processing tool configured to use the segmented focus ring |
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