CN103811247A - Focusing ring for plasma etching and plasma etching device with same - Google Patents
Focusing ring for plasma etching and plasma etching device with same Download PDFInfo
- Publication number
- CN103811247A CN103811247A CN201410053269.6A CN201410053269A CN103811247A CN 103811247 A CN103811247 A CN 103811247A CN 201410053269 A CN201410053269 A CN 201410053269A CN 103811247 A CN103811247 A CN 103811247A
- Authority
- CN
- China
- Prior art keywords
- ring
- plasma etching
- focusing
- plasma
- focusing ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a focusing ring for plasma etching. The focusing ring comprises a lower ring made of an insulator material, a middle ring made of a conductor material and an upper ring. The invention also provides a plasma etching device with the focusing ring. Preset voltage is loaded on the focusing ring, and aiming at different plasma discharge models, the preset voltage is an approximate maximum value of average voltage in an etching cavity within a radio frequency period; in the plasma etching process, the upper ring is etched off gradually, however, due to the limit of electric field distribution on the edges of wafers by the middle ring, the effect of change in the height of the upper ring on the characteristics of plasma on the edges of wafers is little, and particularly the effect on ion incident angles is little, accordingly minor change in the perpendicularity of the etching sections on the edges of the wafers can be ensured.
Description
Technical field
The invention belongs to plasma apparatus field, be specifically related to a kind of focusing ring for plasma etching and there is its plasma etching apparatus.
Background technology
At present, in integrated circuit fabrication process, general using plasma bombardment device carries out etching.Thereby described plasma bombardment device is to utilize plasma bombardment principle to be driven out of the object that reaches etching by the atom of bombardment material surface, and this device generally comprises the accessories such as slide holder (simultaneously as bottom electrode) and focusing ring.As shown in Figure 1, the wafer 2 ' that need to carry out plasma etching processing is placed on the upper surface of slide holder 1 ', in order to prevent that thereby etching process applying plasma corrosion slide holder 1 ' from shortening its useful life, slide holder 1 ' small end body diameter is slightly less than the diameter of wafer 2 ' conventionally, makes wafer 2 ' cover slide holder small end cylinder completely.Around slide holder 1 ', around placing focusing ring 3 ', focusing ring 3 ' inner side part extends under the wafer 2 ' back side, edge.The effect of introducing focusing ring 3 ' is the electric field strength in order to regulate wafer upper surface space, guarantees the etching homogeneity of crystal round fringes region and central area.
But, because focusing ring 3 ' is exposed in plasma, carrying out focusing ring 3 ' and will be corroded gradually along with plasma etching.Because focusing ring 3 ' is in the medium-altitude variation of etching process, there is larger variation in the Electric Field Distribution at wafer 2 ' edge, make ion incidence angle seriously be inclined to vertical direction, as shown in Figure 2, thereby cause plasma etching section generation shift phenomenon, finally cause the yields in crystal round fringes region greatly to reduce.
Summary of the invention
The present invention is intended to solve at least to a certain extent the technical problem that is difficult to keep vertical etching in above-mentioned plasma etching wafer process.
For this reason, one object of the present invention is to propose a kind of focusing ring for plasma etching.
Another object of the present invention is to propose a kind of plasma etching apparatus with this focusing ring.
According to the focusing ring for plasma etching of first embodiment of the invention, comprising: lower ring, described lower ring adopts the insulator of anti-plasma corrosion to make; Middle ring, described middle ring is positioned on described lower ring, adopts conductor to make; Pressed on ring, described pressed on ring is arranged on described ring, adopts semiconductor or insulator to make.
The focusing ring for plasma etching of this embodiment, the middle ring that conductor material is made can on-load voltage, can in plasma etch chamber chamber, play the effect that regulates and maintain Electric Field Distribution, solve the technical problem that is difficult to keep vertical etching in plasma etching wafer process.
In addition, can also there is following additional technical feature according to the focusing ring for plasma etching of the embodiment of the present invention:
Alternatively, the material of described lower ring is alundum (Al2O3).
Alternatively, the material of described middle ring is aluminium.
Alternatively, the material of described pressed on ring is silicon, carborundum or quartz.
According to the plasma etching apparatus of first embodiment of the invention, comprising: slide holder, described slide holder is for support wafer to be etched; Above-disclosed focusing ring, described focusing ring is around being arranged on around described slide holder, and described focusing ring do not contact with described wafer, wherein, described middle ring is loaded with predeterminated voltage, and the size of described predeterminated voltage equals the approximate maximum of the cycle average voltage in plasma discharge process.
In the plasma etching apparatus of this embodiment, to the middle ring on-load voltage of focusing ring, can regulate and maintain the effect of Electric Field Distribution, solve the technical problem that is difficult to keep vertical etching in plasma etching wafer process.
In addition, can also there is following additional technical feature according to the focusing ring for plasma etching of the embodiment of the present invention:
Alternatively, the end face of the sheath layer when carrying out plasma etching of the interface between the middle ring of described focusing ring and lower ring.
Alternatively, the thickness of described middle ring is 0.2-0.5mm.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:
Fig. 1 is the assembling schematic diagram of the traditional focusing ring for plasma etching;
Fig. 2 is the schematic diagram that skew occurs crystal column surface ion incidence angle;
Fig. 3 is the structural representation of the focusing ring of the embodiment of the present invention;
Fig. 4 is the structural representation of the plasma etching apparatus of the embodiment of the present invention;
Fig. 5 (a) is the crystal round fringes equipotential line distribution map (upper ring thickness is 1.5mm) that adopts the plasma etching apparatus of the embodiment of the present invention;
Fig. 5 (b) is the crystal round fringes equipotential line distribution map (upper ring thickness is 0.5mm) that adopts the plasma etching apparatus of the embodiment of the present invention;
Fig. 5 (c) is the crystal round fringes ion incidence angle distribution map that adopts the plasma etching apparatus of the embodiment of the present invention;
Fig. 6 (a) is the crystal round fringes equipotential line distribution map (upper ring thickness is 1.5mm) that does not adopt the plasma etching apparatus of the embodiment of the present invention;
Fig. 6 (b) is the crystal round fringes equipotential line distribution map (upper ring thickness is 0.5mm) that does not adopt the plasma etching apparatus of the embodiment of the present invention;
Fig. 6 (c) is the crystal round fringes ion incidence angle distribution map that does not adopt the plasma etching apparatus of the embodiment of the present invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, be intended to for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of indications such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In the present invention, unless otherwise clearly defined and limited, the terms such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also electrical connection; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can understand as the case may be above-mentioned term concrete meaning in the present invention.
In the present invention, unless otherwise clearly defined and limited, First Characteristic Second Characteristic " on " or D score can be that the first and second features directly contact, or the first and second features are by intermediary indirect contact.And, First Characteristic Second Characteristic " on ", " top " and " above " but First Characteristic directly over Second Characteristic or oblique upper, or only represent that First Characteristic level height is higher than Second Characteristic.First Characteristic Second Characteristic " under ", " below " and " below " can be First Characteristic under Second Characteristic or tiltedly, or only represent that First Characteristic level height is less than Second Characteristic.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
According to the focusing ring for plasma etching of first embodiment of the invention, as shown in Figure 3, can comprise: lower ring 31, middle ring 32 and pressed on ring 31.Wherein, lower ring 31 adopts the insulator of anti-plasma corrosion to make, such as alundum (Al2O3) etc.Middle ring 32 is positioned on lower ring 31, adopts conductor to make, such as aluminium etc.Pressed on ring 33 is arranged on ring 32, adopts semiconductor or insulator to make, such as silicon, carborundum or quartz etc.
The focusing ring for plasma etching of this embodiment, the middle ring that conductor material is made can on-load voltage, can in plasma etch chamber chamber, play the effect that regulates and maintain Electric Field Distribution, solve the technical problem that is difficult to keep vertical etching in plasma etching wafer process.
According to the plasma etching apparatus of first embodiment of the invention, as shown in Figure 4, comprising: slide holder 1 and focusing ring 3.Wherein, slide holder 1 is for support wafer 2 to be etched.Slide holder 1 is simultaneously as bottom electrode, and by capacitance, C1 is connected to radio frequency source.In order to prevent that slide holder 1 is corroded, slide holder 1 is that ladder is cylindric conventionally, and its small end body diameter is slightly less than the diameter of wafer 2.Focusing ring 3 is around being arranged on around slide holder 1, and focusing ring 3 does not contact with wafer 2.Normally, due to the needs of manufacturing tolerance and thermal expansion, between wafer 2 outer rims and focusing ring 3 inner sides, having width is the gap of c, general c=1mm left and right.Alternatively, around the large end cylinder of slide holder 1 and focusing ring 3, an edge ring 4 is set around.This edge ring 4 is mainly used in shielding the free electric field of slide holder edge generation and improves the plasma uniformity of bottom crown top.
Focusing ring 3 can be above-disclosed any focusing ring.Particularly, this focusing ring 3 is made up of lower ring 31, middle ring 32 and pressed on ring 33.Lower ring 31 extends under wafer 2 back sides, edge, and lower surface is seated on the cascaded surface of slide holder 1.Three rings are placed with one heart, and pressed on ring 33, middle ring 32 are identical with partial width on lower ring 31, or middle ring 32 is identical with partial width on lower ring 31, and pressed on ring 33 external diameters are greater than middle ring 32 external diameters, are also to encircle 32 during pressed on ring 33 covers completely.Middle ring 32 is conductor, and is connected to the anode of DC power supply, and the negative electrode of DC power supply is through capacitor C 2 ground connection.Middle ring 32 is connected in DC power supply, for different plasma discharging model, obtains the approximate maximum of the average voltage in the rf period in main plasma district in chamber, the approximate maximum that the rated voltage of setting DC power supply is this average voltage.
According to the sheath layer thickness of wafer 2 upper surfaces in different plasma discharging model, lower ring 31 upper surface h1 are set a little more than wafer 2 upper level, generally take off ring 31 thickness h 1=1～2mm, middle ring 32 thickness h 2=0.2～0.5mm, pressed on ring 33 thickness h 3=1.5～2.5mm.
In the plasma etching apparatus of this embodiment, to the middle ring on-load voltage of focusing ring, can regulate and maintain the effect of Electric Field Distribution, solve the technical problem that is difficult to keep vertical etching in plasma etching wafer process.
For making those skilled in the art understand better the present invention, below in conjunction with embodiment, beneficial effect of the present invention is described.
In the sheath layer of wafer 2 tops, be the important area that affects etching, the strong electric field existing in it is very large on the impact of ion incidence angle.The material of choosing pressed on ring 33 and lower ring 31 is quartz, and middle ring 32 current potentials are maintained at 0v, h1=1.3mm, h2=0.5mm, crystal round fringes Electric Field Distribution when Fig. 5 (a) and Fig. 5 (b) are respectively h3=0.5mm and h3=1.5mm.Because middle ring 32 aspect ratio sheath of living in layer thickness is slightly large, the potential lines of wafer 2 fringe regions mainly concentrates on middle ring 32 belows, and middle ring 32 tops only have a small amount of potential lines to exist.In the time of pressed on ring 33 height change, in only can affecting, encircle a small amount of potential lines of 32 tops, it is very micro-that centering is encircled the 32 most of potential line distribution impacts in below.From Fig. 5 (a) and Fig. 5 (b), when pressed on ring 33 height are reduced to 0.5mm by 1.5mm, the following Electric Field Distribution of middle ring 32 does not almost change.Fig. 5 (c) has shown crystal round fringes ion incidence angle distribution radially while adopting technical scheme of the present invention, and when solid line and dotted line are respectively pressed on ring 33 highly for 1.5mm and 0.5mm, ion incidence angle is with the change curve of radius.Contrasted from two figure, when pressed on ring 33 height is reduced to 0.5mm by 1.5mm, while adopting apparatus of the present invention, same position not in the same time ionic incident angles degree change between 1 °～1.5 °.So that at wafer, radially 148mm place is as example, while adopting apparatus of the present invention, when pressed on ring 33 is highly 1.5mm and 0.5mm, ion incidence angle is respectively-5.6 ° and-7 °, and excursion is 1.4 °.
As a comparison, electing middle ring 32 as the material quartz same with pressed on ring 33 and lower ring 31, is also existing focusing ring structure, is predeterminated voltage but do not maintain middle ring 32 current potentials.Its corresponding crystal round fringes Electric Field Distribution is shown in Fig. 6 (a) and Fig. 6 (b), and in the time that pressed on ring 33 height are reduced to 0.5mm by 1.5mm, crystal round fringes Electric Field Distribution is obviously different.Fig. 6 (c) has shown crystal round fringes ion incidence angle distribution radially while not adopting technical scheme of the present invention, and when solid line and dotted line are respectively pressed on ring 33 highly for 1.5mm and 0.5mm, ion incidence angle is with the change curve of radius.When pressed on ring 33 height are reduced to 0.5mm by 1.5mm, while not adopting apparatus of the present invention, change greatly the closer to wafer 2 edge's ion incidence angles.So that at wafer, radially 148mm place is as example, while not adopting apparatus of the present invention, when pressed on ring 33 is highly 1.5mm and 0.5mm, ion incidence angle is respectively-0.5 ° and-3.5 °, and excursion is 3 °, is to adopt more than 2 times of apparatus of the present invention.
As from the foregoing, adopt device of the present invention, along with the carrying out of etching, although the pressed on ring of focusing ring is corroded gradually, it reduces highly gradually, but because middle ring has limited near Electric Field Distribution crystal round fringes, plasma characteristics (the especially ion incidence angle) impact of pressed on ring height change on crystal round fringes is very little, can guarantee that larger variation does not occur the perpendicularity of the Etching profile of crystal round fringes.Therefore, in plasma etch process, technical scheme of the present invention can keep the perpendicularity of wafer 2 etching edge sections, significantly improves the yields in crystal round fringes region.Along with the carrying out of etching, only need to regularly replace pressed on ring 33, simple to operate, cost reduces greatly.
Although illustrated and described embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention in the situation that not departing from principle of the present invention and aim, modification, replacement and modification.
Claims (7)
1. for a focusing ring for plasma etching, it is characterized in that, comprising:
Lower ring, described lower ring adopts the insulator of anti-plasma corrosion to make;
Middle ring, described middle ring is positioned on described lower ring, adopts conductor to make;
Pressed on ring, described pressed on ring is arranged on described ring, adopts semiconductor or insulator to make.
2. focusing ring according to claim 1, is characterized in that, the material of described lower ring is alundum (Al2O3).
3. according to the focusing ring described in claim 1-2, it is characterized in that, the material of described middle ring is aluminium.
4. according to the focusing ring described in claim 1-3, it is characterized in that, the material of described pressed on ring is silicon, carborundum or quartz.
5. a plasma etching apparatus, is characterized in that, comprising:
Slide holder, described slide holder is for support wafer to be etched;
Focusing ring described in claim 1-4, described focusing ring is around being arranged on around described slide holder, and described focusing ring do not contact with described wafer,
Wherein, described middle ring is loaded with predeterminated voltage, and the size of described predeterminated voltage equals the approximate maximum of the cycle average voltage in plasma discharge process.
6. plasma etching apparatus according to claim 5, is characterized in that, the end face of the sheath layer when carrying out plasma etching of the interface between the middle ring of described focusing ring and lower ring.
7. according to the plasma etching apparatus described in claim 5-6, it is characterized in that, the thickness of described middle ring is 0.2-0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410053269.6A CN103811247B (en) | 2014-02-17 | 2014-02-17 | For plasma etching focusing ring and there is its plasma etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410053269.6A CN103811247B (en) | 2014-02-17 | 2014-02-17 | For plasma etching focusing ring and there is its plasma etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103811247A true CN103811247A (en) | 2014-05-21 |
| CN103811247B CN103811247B (en) | 2016-04-13 |
Family
ID=50707870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410053269.6A Expired - Fee Related CN103811247B (en) | 2014-02-17 | 2014-02-17 | For plasma etching focusing ring and there is its plasma etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103811247B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017031821A1 (en) * | 2015-08-24 | 2017-03-02 | 沈阳拓荆科技有限公司 | Ceramic ring capable of changing shape and appearance of surface thin film of wafer |
| CN106920729A (en) * | 2015-12-28 | 2017-07-04 | 中微半导体设备(上海)有限公司 | The plasma processing apparatus and method of a kind of uniform etching substrate |
| CN107919263A (en) * | 2016-10-06 | 2018-04-17 | 细美事有限公司 | Substrate supporting unit including its substrate board treatment and its control method |
| WO2018217583A1 (en) * | 2017-05-22 | 2018-11-29 | Lam Research Corporation | Wafer edge contact hardware and methods to eliminate deposition at wafer backside edge and notch |
| CN109216144A (en) * | 2017-07-03 | 2019-01-15 | 中微半导体设备(上海)有限公司 | A kind of plasma reactor with low frequency RF power profile adjustment function |
| CN109256316A (en) * | 2018-09-29 | 2019-01-22 | 德淮半导体有限公司 | Plasma etching apparatus and its method for etching plasma |
| CN110243273A (en) * | 2018-03-09 | 2019-09-17 | 东京毅力科创株式会社 | The method of operating of analyzer and the system for checking focusing ring |
| CN111383887A (en) * | 2018-12-27 | 2020-07-07 | 江苏鲁汶仪器有限公司 | Device and method for improving plasma etching uniformity |
| CN111653469A (en) * | 2020-06-30 | 2020-09-11 | 上海华力集成电路制造有限公司 | Focusing ring applied to etching equipment, forming method thereof and etching equipment |
| CN112652515A (en) * | 2020-12-09 | 2021-04-13 | 长江存储科技有限责任公司 | Plasma etching device and edge ring thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1591793A (en) * | 2003-09-05 | 2005-03-09 | 东京毅力科创株式会社 | Focusing ring and plasma treater |
| CN101303997A (en) * | 2003-04-24 | 2008-11-12 | 东京毅力科创株式会社 | Plasma processing apparatus, focus ring, and susceptor |
| US20090186487A1 (en) * | 2005-08-08 | 2009-07-23 | Lam Research Corporation | Edge ring assembly with dielectric spacer ring |
| CN101609779A (en) * | 2008-06-19 | 2009-12-23 | 东京毅力科创株式会社 | Focusing ring and plasma processing apparatus |
| US20110070743A1 (en) * | 2007-06-28 | 2011-03-24 | Rajinder Dhindsa | Apparatus and methods for edge ring implementation for substrate processing |
| US20110272100A1 (en) * | 2006-03-17 | 2011-11-10 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
| CN102800547A (en) * | 2011-05-27 | 2012-11-28 | 中微半导体设备(上海)有限公司 | Modulable focus ring and method for adjusting plasma processor by using focus ring |
| CN103165494A (en) * | 2011-12-08 | 2013-06-19 | 中微半导体设备(上海)有限公司 | Cleaning device and method of polymer on reverse side of wafer |
-
2014
- 2014-02-17 CN CN201410053269.6A patent/CN103811247B/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101303997A (en) * | 2003-04-24 | 2008-11-12 | 东京毅力科创株式会社 | Plasma processing apparatus, focus ring, and susceptor |
| CN1591793A (en) * | 2003-09-05 | 2005-03-09 | 东京毅力科创株式会社 | Focusing ring and plasma treater |
| JP2010232694A (en) * | 2003-09-05 | 2010-10-14 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
| US20090186487A1 (en) * | 2005-08-08 | 2009-07-23 | Lam Research Corporation | Edge ring assembly with dielectric spacer ring |
| US20110272100A1 (en) * | 2006-03-17 | 2011-11-10 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
| US20110070743A1 (en) * | 2007-06-28 | 2011-03-24 | Rajinder Dhindsa | Apparatus and methods for edge ring implementation for substrate processing |
| CN101609779A (en) * | 2008-06-19 | 2009-12-23 | 东京毅力科创株式会社 | Focusing ring and plasma processing apparatus |
| CN102800547A (en) * | 2011-05-27 | 2012-11-28 | 中微半导体设备(上海)有限公司 | Modulable focus ring and method for adjusting plasma processor by using focus ring |
| CN103165494A (en) * | 2011-12-08 | 2013-06-19 | 中微半导体设备(上海)有限公司 | Cleaning device and method of polymer on reverse side of wafer |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017031821A1 (en) * | 2015-08-24 | 2017-03-02 | 沈阳拓荆科技有限公司 | Ceramic ring capable of changing shape and appearance of surface thin film of wafer |
| CN106920729B (en) * | 2015-12-28 | 2019-05-31 | 中微半导体设备(上海)股份有限公司 | A kind of plasma processing apparatus and method of uniform etching substrate |
| CN106920729A (en) * | 2015-12-28 | 2017-07-04 | 中微半导体设备(上海)有限公司 | The plasma processing apparatus and method of a kind of uniform etching substrate |
| CN107919263A (en) * | 2016-10-06 | 2018-04-17 | 细美事有限公司 | Substrate supporting unit including its substrate board treatment and its control method |
| CN107919263B (en) * | 2016-10-06 | 2020-10-09 | 细美事有限公司 | Substrate supporting unit, substrate processing apparatus including the same, and control method thereof |
| WO2018217583A1 (en) * | 2017-05-22 | 2018-11-29 | Lam Research Corporation | Wafer edge contact hardware and methods to eliminate deposition at wafer backside edge and notch |
| CN109216144A (en) * | 2017-07-03 | 2019-01-15 | 中微半导体设备(上海)有限公司 | A kind of plasma reactor with low frequency RF power profile adjustment function |
| CN110243273A (en) * | 2018-03-09 | 2019-09-17 | 东京毅力科创株式会社 | The method of operating of analyzer and the system for checking focusing ring |
| CN110243273B (en) * | 2018-03-09 | 2022-11-01 | 东京毅力科创株式会社 | Determinator and method for operating a system for checking a focus ring |
| CN109256316A (en) * | 2018-09-29 | 2019-01-22 | 德淮半导体有限公司 | Plasma etching apparatus and its method for etching plasma |
| CN111383887A (en) * | 2018-12-27 | 2020-07-07 | 江苏鲁汶仪器有限公司 | Device and method for improving plasma etching uniformity |
| CN111653469A (en) * | 2020-06-30 | 2020-09-11 | 上海华力集成电路制造有限公司 | Focusing ring applied to etching equipment, forming method thereof and etching equipment |
| CN111653469B (en) * | 2020-06-30 | 2024-01-09 | 上海华力集成电路制造有限公司 | Focusing ring applied to etching equipment, forming method thereof and etching equipment |
| CN112652515A (en) * | 2020-12-09 | 2021-04-13 | 长江存储科技有限责任公司 | Plasma etching device and edge ring thereof |
| CN112652515B (en) * | 2020-12-09 | 2023-08-15 | 长江存储科技有限责任公司 | Plasma etching device and edge ring thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103811247B (en) | 2016-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103811247B (en) | For plasma etching focusing ring and there is its plasma etching apparatus | |
| KR102070460B1 (en) | Edge exclusion control with adjustable plasma exclusion zone ring | |
| KR102280571B1 (en) | Mounting table and plasma processing apparatus | |
| KR101654868B1 (en) | Plasma processing apparatus, plasma processing method and storage medium storing program | |
| US10847347B2 (en) | Edge ring assembly for a substrate support in a plasma processing chamber | |
| TWI438860B (en) | Electrostatic chuck and manufacturing method for the same | |
| US9011637B2 (en) | Plasma processing apparatus and method of manufacturing semiconductor device | |
| KR20190118974A (en) | Plasma processing apparatus, plasma control method, computer readable recording medium | |
| CN102568992B (en) | Plasma processing apparatus | |
| CN206877967U (en) | Process kit and plasma chamber | |
| KR20090081717A (en) | Electrostatic chuck, method of manufacturing the same and apparatus for processing a substrate including the same | |
| US20150162170A1 (en) | Plasma processing apparatus and focus ring | |
| US20190006156A1 (en) | Plasma Processing Apparatus | |
| WO2019062573A1 (en) | Process chamber and capacitively coupled plasma apparatus | |
| TW201447961A (en) | Control method of plasma processing apparatus | |
| KR102361757B1 (en) | Plasma processing method and plasma processing device | |
| KR20240046467A (en) | Etching apparatus and etching method | |
| CN107527784B (en) | Plasma processing apparatus | |
| KR20200038417A (en) | Plasma processing apparatus and method for measuring thickness of ring member | |
| US20140224426A1 (en) | Substrate support unit and plasma etching apparatus having the same | |
| US11328893B2 (en) | Plasma processing system | |
| US20200381282A1 (en) | Methods and apparatus for reducing high voltage arcing in semiconductor process chambers | |
| CN106298420B (en) | Lower electrode and semiconductor processing equipment | |
| CN218735116U (en) | Improved dry etching machine | |
| CN104178793A (en) | Double-sided electrophoresis frame |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Feng Juan Inventor after: Han Wenbin Inventor after: Duan Wenrui Inventor after: Tian Ling Inventor before: Han Wenbin Inventor before: Feng Juan Inventor before: Duan Wenrui Inventor before: Tian Ling |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: HAN WENBIN FENG JUAN DUAN WENRUI TIAN LING TO: FENG JUAN HAN WENBIN DUAN WENRUI TIAN LING |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160413 Termination date: 20180217 |