CN112652515A - Plasma etching device and edge ring thereof - Google Patents
Plasma etching device and edge ring thereof Download PDFInfo
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- CN112652515A CN112652515A CN202011428640.4A CN202011428640A CN112652515A CN 112652515 A CN112652515 A CN 112652515A CN 202011428640 A CN202011428640 A CN 202011428640A CN 112652515 A CN112652515 A CN 112652515A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
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Abstract
The invention provides a plasma etching device and an edge ring thereof, wherein the edge ring is made of composite materials, and the composite materials comprise a first material and a second material positioned in the first material so as to reduce the electric charge quantity accumulated on the surface of the edge ring through the second material; according to the invention, the charge transfer rate can be improved and the charge quantity accumulated on the surface of the edge ring can be reduced by the wide bandgap composite material; through the high-conductivity composite material, electric charges can be drained in time so as to reduce electrostatic adsorption acting force, weaken the surface adsorption effect of the edge ring and reduce the electric charge accumulated on the surface of the edge ring; through the P-type composite material or the N-type composite material, under the action of an external electric field, the charges on the surface of the edge ring and byproducts form repulsion of the same charges, so that the charge quantity accumulated on the surface of the edge ring is reduced; the by-products discharged in time can reduce the frequency of cleaning the reaction cavity and improve the productivity; the defects generated in the etching process are reduced, and the yield is improved.
Description
Technical Field
The invention belongs to the field of semiconductor equipment, and relates to a plasma etching device and an edge ring thereof.
Background
Etching (etching), which is a technique for removing materials by using a chemical reaction or a physical impact action, can be generally classified into wet etching (wet etching) and dry etching (dry etching), is an important step in semiconductor manufacturing processes, microelectronic manufacturing processes, and micro-nano scale manufacturing processes, and is a main process of patterning (patterrn) processing associated with photolithography.
Plasma etching, which is the most common form of dry etching, has the following principle: the gas exposed in the electron region forms plasma, and when the plasma is accelerated by an electric field, enough energy is released to promote the plasma to react with the surface of the material, so that the material is etched. At present, in the semiconductor industry, plasma etching in dry etching is increasingly widely used because circuit patterns can be made finer.
During the etching process, the etching gas is generally pumped while exhausting to remove the by-products generated by the reaction. Therefore, the etching gas in the edge area of the wafer is pumped away earlier than the etching gas in the central area of the wafer, so that the etching gas in the edge area and the etching gas in the central area of the wafer are unevenly distributed, the surface etching of the wafer is uneven, and the quality of the subsequently prepared wafer is affected.
Currently, in order to solve the wafer edge effect and reduce the difference between the process key indexes of the wafer edge region and the wafer center region, in practical applications, an edge ring (edge ring) with a certain height is usually introduced, and the edge ring effectively adjusts the concentration and the incident angle of the plasma at the wafer edge, so as to effectively improve the indexes such as tilt (tilting), feature size uniformity (CD uniformity), and the like, and further reduce the risk such as merging (merge) between holes and trenches, and reduce the leakage probability.
However, in the etching process, since the edge ring is close to the edge of the wafer, there are side effects in practical applications, for example, the edge ring is prone to absorb byproducts generated in the etching process, and the byproducts are continuously aggregated to form larger particles over time, so that when the bias power (bias power) is low, the patterning is prone to damage and form defects, and when the bias power (bias power) is high (such as 400KHz), abnormal micro-arc discharge (micro-arc) is prone to be generated, so that the wafer is irreparably damaged, the yield of the wafer is reduced, and the byproducts which cannot be discharged in time also increase the frequency of cleaning the reaction chamber (chamber), and the capacity is reduced.
Therefore, it is desirable to provide a plasma etching apparatus and an edge ring thereof.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide a plasma etching apparatus and an edge ring thereof, which are used to solve the above-mentioned problems caused by the adsorption of etching by-products by the edge ring in the conventional plasma etching apparatus.
To achieve the above and other related objects, the present invention provides an edge ring for a plasma etching apparatus, the edge ring being made of a composite material including a first material and a second material disposed in the first material, so as to reduce an amount of charge accumulated on a surface of the edge ring by the second material.
Optionally, the composite material comprises a wide bandgap composite material, and the wide bandgap composite material comprises one of a silicon-based silicon carbide composite material, a silicon-based gallium nitride composite material, and a silicon-based aluminum nitride composite material.
Optionally, the first material constitutes a first material layer, the second material constitutes a second material layer, the first material layer and the second material layer are alternately stacked in the edge ring, and the first material layer and the second material layer are arranged in a manner including one or a combination of alternately stacking in the transverse direction and alternately stacking in the longitudinal direction.
Optionally, the first material layer includes one or a combination of a conductive material layer and an insulating material layer, wherein the conductive material layer includes one or a combination of a silicon layer, a carbon layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, the insulating material layer includes one or a combination of a dialuminum trioxide layer, a silicon oxide layer and a silicon nitride layer, the second material layer includes one or a combination of a carbon fiber layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, and the second material layer has a conductivity greater than that of the first material layer.
Optionally, the composite material includes a P-type composite material or an N-type composite material, and under the action of the external electric field, the upper surface of the edge ring and a by-product generated by plasma etching have the same charge.
The present invention also provides a plasma etching apparatus, comprising:
the electrostatic chuck is used for adsorbing the wafer;
the edge ring is located on the periphery of the electrostatic chuck and made of composite materials, the composite materials comprise first materials and second materials located in the first materials, and therefore the amount of electric charges accumulated on the surface of the edge ring is reduced through the second materials.
Optionally, the composite material comprises a wide bandgap composite material, and the wide bandgap composite material comprises one of a silicon-based silicon carbide composite material, a silicon-based gallium nitride composite material, and a silicon-based aluminum nitride composite material.
Optionally, the first material constitutes a first material layer, the second material constitutes a second material layer, in the edge ring, the first material layers and the second material layers are alternately stacked, and the first material layers and the second material layers are arranged in a mode of one or combination of alternately stacking along the transverse direction and alternately stacking along the longitudinal direction, the first material layers comprise one or combination of conductive material layers and insulating material layers, wherein the conductive material layer comprises one or a combination of a silicon layer, a carbon layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, the insulating material layer comprises one or a combination of an aluminum oxide layer, a silicon oxide layer and a silicon nitride layer, the second material layer comprises one or a combination of a carbon fiber layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, and the electrical conductivity of the second material layer is greater than that of the first material layer.
Optionally, the composite material includes a P-type composite material or an N-type composite material, and under the action of the external electric field, the surface of the edge ring and a by-product generated by plasma etching have the same charge.
Optionally, the plasma etching device includes one of a capacitive coupling plasma etching device, an inductive coupling plasma etching device, and a microwave electron cyclotron resonance plasma etching device.
As described above, according to the plasma etching apparatus and the edge ring thereof of the present invention, the edge ring is made of a composite material, and the composite material includes the first material and the second material located in the first material, so as to reduce the amount of charges accumulated on the surface of the edge ring through the second material; according to the invention, the charge transfer rate can be improved and the charge quantity accumulated on the surface of the edge ring can be reduced by the wide bandgap composite material; through the high-conductivity composite material, electric charges can be drained in time so as to reduce electrostatic adsorption acting force, weaken the surface adsorption effect of the edge ring and reduce the electric charge accumulated on the surface of the edge ring; through the P-type composite material or the N-type composite material, under the action of an external electric field, the charges on the surface of the edge ring and byproducts form repulsion of the same charges, so that the charge quantity accumulated on the surface of the edge ring is reduced; the by-products discharged in time can reduce the frequency of cleaning the reaction cavity and improve the productivity; the defects generated in the etching process are reduced, and the yield is improved.
Drawings
Fig. 1 shows a schematic diagram of plasma generation.
Fig. 2 is a schematic partial structure diagram of a plasma etching apparatus according to a first embodiment.
Fig. 3 is a schematic structural diagram of an edge ring according to an embodiment.
Fig. 4a is a schematic structural diagram of an edge ring according to a second embodiment.
Fig. 4b is a schematic structural diagram of another edge ring according to the second embodiment.
Fig. 5 is a schematic structural diagram of an edge ring according to a third embodiment.
Description of the element reference numerals
110. 120, 130 edge ring
110a, 120a, 130a edge ring upper surface
110b, 120b, 130b edge ring lower surface
110c, 120c, 130c edge ring inner side wall
110d, 120c, 130d edge ring outer side wall
121 first material layer
122 second material layer
200 static sucker
300 wafer
400 driving device
Detailed Description
Plasma (Plasma), also known as Plasma, is composed of positively and negatively charged ions, molecules, atoms and radicals generated by ionization of a gas. When avalanche ionization occurs under the action of a strong electric field, Plasma can generate the transformation of gas from a normal state to Plasma, and also from an insulator to a conductor. As shown in fig. 1, a schematic diagram of the principle of gas transformation from normal state to plasma after receiving energy is shown. When etching is performed, anisotropic etching is performed by the charged Plasma particles. In general, plasma etching can be considered as chemical etching, and the physical etching effect is relatively weak and can be ignored. The plasma etching process comprises the following main steps: forming etching reaction particles; the reaction particles reach the surface of the wafer and perform chemical adsorption reaction with the wafer to form chemical bonds and reaction byproducts at the same time; and pumping the by-products on the surface of the wafer out of the reaction chamber.
In plasma etching, the nonuniformity of wafer etching is mainly attributed to the nonuniform distribution of a plasma sheath (plasma sheath) on the wafer surface, or the nonuniform distribution of plasma density at the boundary of the sheath, so that the wafer etching is nonuniform. At present, an edge ring with a certain height is generally adopted to improve the concentration and the incident angle of plasma in the edge area of a wafer so as to realize uniform etching of the wafer. However, most of the edge rings are made of silicon at present, by-products generated in the etching process are continuously gathered on the surface of the edge ring to form larger particles along with the lapse of time, damage is caused to the patterning of the wafer, defects are formed, micro arc discharge (micro arc) is generated, irreparable damage is caused to the wafer, the by-products which cannot be discharged in time can increase the frequency of cleaning a reaction chamber (chamber), and the capacity is reduced.
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. As used herein, "between … …" is meant to include both endpoints.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
Referring to fig. 2, in the present embodiment, a plasma etching apparatus is provided, it should be noted that fig. 2 only illustrates a part of the structure of the plasma etching apparatus, and for example, a gas supply system, a power supply system, a vacuum system, a cooling system, a control system, and the like in the plasma etching apparatus are not illustrated in fig. 2, and may be configured by referring to the existing equipment, which is not limited herein.
As an example, the plasma etching apparatus may include any one of a capacitively coupled plasma etching apparatus (RIE), an inductively coupled plasma etching apparatus (ICP) and a microwave electron cyclotron resonance plasma etching apparatus (ECR), i.e., the edge ring in the present application may be applied to any one of the capacitively coupled plasma etching apparatus (RIE), the inductively coupled plasma etching apparatus (ICP) and the microwave electron cyclotron resonance plasma etching apparatus (ECR).
Specifically, the plasma etching apparatus in this embodiment includes the edge ring 110 and the electrostatic chuck 200, the wafer 300 to be etched can be adsorbed by the electrostatic chuck 200, and the plasma distribution in the edge region of the wafer 300 can be improved by the edge ring 110 located at the periphery of the electrostatic chuck 200, so as to improve the etching uniformity of the wafer 300. In this embodiment, the edge ring 110 is connected to a driving device 400, so that the driving device 400 drives the edge ring 110 to adjust the height thereof by controlling, for example, a controller, so as to compensate the height difference of the edge ring 110 caused by long-term loss in the etching environment, thereby prolonging the service life of the edge ring 110. The driving device 400 may be a lifting rod, and the specific type is not limited herein.
In this embodiment, the edge ring 110 includes an upper edge ring surface 110a, a lower edge ring surface 110b, an inner edge ring sidewall 110c, and an outer edge ring sidewall 110 d. The inner sidewall 110c of the edge ring 110 has a shape of a vertical inner sidewall 110c, but is not limited thereto, and the inner sidewall 110c of the edge ring 110 may also have a slope with an inclination angle of, for example, 30 ° to 80 °, such as 45 ° or 60 °, so as to further improve the incident direction and distribution of the plasma on the edge of the wafer 300 through the inclined inner sidewall 110c, so as to expand the application range, and the shape can be selected according to the requirement, which is not limited herein.
In this embodiment, the edge ring 110 is made of a wide bandgap composite material, and the wide bandgap composite material includes a first material and a wide bandgap second material located in the first material, so as to reduce the amount of charges accumulated on the surface of the edge ring 110 by the wide bandgap second material, including the amount of charges accumulated on the surfaces of the upper surface 110a and the inner sidewall 110c of the edge ring 110.
Specifically, with the development of semiconductor technology, the third generation of semiconductor materials with wide bandgap have wide application in high temperature, high frequency, high power, photoelectron, radiation resistance and other fields due to the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift velocity and the like. In this embodiment, the wide bandgap composite material includes one of a silicon-based silicon carbide composite material, a silicon-based gallium nitride composite material and a silicon-based aluminum nitride composite material, wherein the wide bandgap composite material uses a silicon-based material as a first material, such as a silicon material with conductivity, and the wide bandgap material includes an aluminum material such as silicon carbide, gallium nitride and aluminum nitride. The specific synthesis method of the wide bandgap composite material is not limited herein, and the wide bandgap composite material can be prepared according to the current method for preparing the wide bandgap composite material, and the mass percentages of the second material and the first material in the wide bandgap composite material can be set according to the needs, and are not limited herein excessively.
In the embodiment, the edge ring 110 is made of a semiconductor material having a wide bandgap, which is about twice as large as that of a silicon material (the bandgap of the wide bandgap material is 2.3eV or more, and the bandgap of the silicon material is 1.12eV), so that the carrier mobility can be increased, the amount of charges accumulated on the surface of the edge ring 110 can be reduced, the edge ring includes the upper surface 110a and the inner sidewall 110c, the charged byproducts on the surface of the edge ring 110 can be rapidly migrated, the residence time of the byproducts can be reduced, the amount of accumulated byproducts can be reduced, the byproducts can be timely discharged, the frequency of cleaning the reaction chamber (chamber) can be reduced, and the throughput can be increased.
Example two
Referring to fig. 4a and 4b, the present embodiment provides two edge rings 120 with different structures. The difference from the first embodiment is mainly as follows: in the first embodiment, the whole edge ring 110 is formed by using the uniform wide bandgap composite material, but in the present embodiment, the first material and the second material in the edge ring 120 respectively and independently form material layers with different conductivities, so that the second material with a high conductivity can conduct timely charge drainage to eliminate the charge accumulation on the surface of the edge ring 120, thereby reducing the electrostatic adsorption acting force and the surface adsorption, reducing the amount of accumulated byproducts, timely discharging the byproducts, and improving the productivity.
The edge ring 120 is a high-conductivity composite material, the high-conductivity composite material includes a first material and a high-conductivity second material located in the first material, the first material constitutes the first material layer 121, the second material constitutes the second material layer 122, and the conductivity of the second material layer 122 is greater than that of the first material layer 121, so that the amount of charges accumulated on the surface of the edge ring 120 is reduced by the second material layer 122. The formation method of the first material layer 121 and the second material layer 122 may be prepared by a bonding method, a deposition method, an etching deposition method, and the like, and may be specifically selected according to the types of the first material and the second material, which is not limited herein.
As an example, in the edge ring 120, the first material layers 121 and the second material layers 122 are alternately stacked, and the first material layers 121 and the second material layers 122 are disposed in a manner including one or a combination of alternately stacking in a transverse direction and alternately stacking in a longitudinal direction, so as to reduce an amount of electric charges accumulated on a surface of the edge ring 120 by the second material.
As an example, the first material layer 121 includes one or a combination of a conductive material layer and an insulating material layer, wherein the conductive material layer includes one or a combination of a silicon layer, a carbon layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, the insulating material layer includes one or a combination of a dialuminum trioxide layer, a silicon oxide layer and a silicon nitride layer, the second material layer 122 includes one or a combination of a carbon fiber layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, and the second material layer 122 has a conductivity greater than that of the first material layer 121.
Specifically, referring to fig. 4a, in the present embodiment, the edge ring 120 includes an edge ring upper surface 120a, an edge ring lower surface 120b, an edge ring inner sidewall 120c, and an edge ring outer sidewall 120 d. The first material layers 121 and the second material layers 122 are alternately stacked in the transverse direction, the first material layers 121 may be silicon layers, the second material layers 122 may be carbon fiber layers, but the invention is not limited thereto, and for example, the first material layers 121 may also be insulating material layers, such as one or a combination of aluminum oxide, silicon oxide and silicon nitride, or conductive materials, such as one or a combination of carbon, silicon carbide, gallium nitride and aluminum nitride, or a combination of conductive material layers and insulating material layers, which may be selected according to the needs and is not limited herein.
When the transversely and alternately stacking manner shown in fig. 4a is adopted, the charged byproducts attached to the inner sidewall 120c can be rapidly drained by the second material layer 122 exposed on the inner sidewall 120c of the edge ring 120, so as to eliminate the accumulation of charges on the inner sidewall 120c of the edge ring 120, reduce the electrostatic adsorption force, reduce the surface adsorption, and reduce the amount of side accumulation, especially effectively reduce the probability of micro-arc discharge at the gap between the edge ring 120 and the electrostatic chuck. Of course, the first material layers 121 and the second material layers 122 stacked alternately in the transverse direction may also be interchanged, so that the upper surface 120a and the inner sidewall 120c of the edge ring 120 may further function to drain charged byproducts, and the byproducts may be discharged in time, thereby reducing the frequency of cleaning the reaction chamber and improving the throughput.
Fig. 4b illustrates another structure of the edge ring 120 different from that of fig. 4a, wherein the first material layers 121 and the second material layers 122 are disposed in a manner including a combination of alternately stacking in a transverse direction and alternately stacking in a longitudinal direction, so as to simultaneously drain charged byproducts through the second material layers 122 disposed in the transverse direction and the second material layers 122 disposed in the longitudinal direction, respectively, thereby achieving the function of draining charged byproducts through the upper surface 120a and the inner sidewall 120c of the edge ring 120. However, the edge ring 120 may also include only the first material layer 121 and the second material layer 122 disposed along the longitudinal direction, which is not limited herein.
EXAMPLE III
Referring to fig. 5, the present embodiment provides an edge ring 130, which is different from the first and second embodiments mainly in that in the present embodiment, the composite material in the edge ring 130 is a P-type composite material or an N-type composite material, and the charge distribution of the upper surface 130a of the edge ring 130 is changed under the action of the external electric field, so that the charge of the upper surface 130a of the edge ring 130 is consistent with the charge of the by-product. Thereby relying on the repulsion of like charges and by means of a vacuum system, the byproducts are pumped out of the reaction chamber in time, thereby reducing the accumulation of byproducts on the surface of the edge ring 130.
Specifically, in the present embodiment, the edge ring 130 includes an edge ring upper surface 130a, an edge ring lower surface 130b, an edge ring inner sidewall 130c, and an edge ring outer sidewall 130 d. The first material is a silicon material, and the second material is a P-type doped material, such as boron, to provide a P-type composite material, but not limited thereto, and an N-type composite material doped with phosphorus, arsenic, or other P-type doped materials may also be used, and is not limited herein.
Referring to fig. 5, in the embodiment, after applying negative charges to the lower surface 130b of the edge ring 130 doped with boron, carriers inside the edge ring 130 migrate under the action of an external electric field, wherein holes are enriched toward the lower surface 130b of the edge ring 130, and electrons migrate toward the upper surface 130a of the edge ring 130, so that electrons enriched on the upper surface 130a of the edge ring 130 can form charge repulsion with the negatively charged byproducts located outside the upper surface 130a of the edge ring 130, and thus the byproducts can be pumped out of the reaction chamber by a vacuum system in the plasma etching apparatus, so as to reduce the enrichment of the byproducts on the upper surface 130a of the edge ring 130.
For the N-type composite material, reference may be made to the P-type composite material, which is not described herein.
In summary, in the plasma etching apparatus and the edge ring thereof of the present invention, the edge ring is made of a composite material, the composite material includes a first material and a second material located in the first material, so as to reduce the amount of charges accumulated on the surface of the edge ring through the second material; according to the invention, the charge transfer rate can be improved and the charge quantity accumulated on the surface of the edge ring can be reduced by the wide bandgap composite material; through the high-conductivity composite material, electric charges can be drained in time so as to reduce electrostatic adsorption acting force, weaken the surface adsorption effect of the edge ring and reduce the electric charge accumulated on the surface of the edge ring; through the P-type composite material or the N-type composite material, under the action of an external electric field, the charges on the surface of the edge ring and byproducts form repulsion of the same charges, so that the charge quantity accumulated on the surface of the edge ring is reduced; the by-products discharged in time can reduce the frequency of cleaning the reaction cavity and improve the productivity; the by-products discharged in time can reduce the frequency of cleaning the reaction cavity and improve the productivity; the defects generated in the etching process are reduced, and the yield is improved.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An edge ring for a plasma etching apparatus, comprising: the edge ring is made of composite materials, and the composite materials comprise a first material and a second material positioned in the first material, so that the amount of electric charge accumulated on the surface of the edge ring is reduced through the second material.
2. The edge ring of claim 1, wherein: the composite material comprises a wide bandgap composite material, and the wide bandgap composite material comprises one of a silicon-based silicon carbide composite material, a silicon-based gallium nitride composite material and a silicon-based aluminum nitride composite material.
3. The edge ring of claim 1, wherein: the first material forms a first material layer, the second material forms a second material layer, the first material layer and the second material layer are alternately stacked in the edge ring, and the first material layer and the second material layer are arranged in a mode of including one or a combination of alternately stacking along the transverse direction and alternately stacking along the longitudinal direction.
4. The edge ring of claim 3, wherein: the first material layer comprises one or a combination of a conductive material layer and an insulating material layer, wherein the conductive material layer comprises one or a combination of a silicon layer, a carbon layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, the insulating material layer comprises one or a combination of a dialuminum trioxide layer, a silicon oxide layer and a silicon nitride layer, the second material layer comprises one or a combination of a carbon fiber layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, and the second material layer has higher electrical conductivity than the first material layer.
5. The edge ring of claim 1, wherein: the composite material comprises a P-type composite material or an N-type composite material, and under the action of an external electric field, the upper surface of the edge ring and a by-product generated by plasma etching have the same charge.
6. A plasma etching apparatus, comprising:
the electrostatic chuck is used for adsorbing the wafer;
the edge ring is located on the periphery of the electrostatic chuck and made of composite materials, the composite materials comprise first materials and second materials located in the first materials, and therefore the amount of electric charges accumulated on the surface of the edge ring is reduced through the second materials.
7. The plasma etching apparatus according to claim 6, wherein: the composite material comprises a wide bandgap composite material, and the wide bandgap composite material comprises one of a silicon-based silicon carbide composite material, a silicon-based gallium nitride composite material and a silicon-based aluminum nitride composite material.
8. The plasma etching apparatus according to claim 6, wherein: the first material constituting a first material layer and the second material constituting a second material layer, the first material layer being alternately stacked with the second material layer in the edge ring, and the first material layer and the second material layer are arranged in a manner of one or a combination of transverse alternate stacking and longitudinal alternate stacking, the first material layer comprises one or a combination of conductive material layers and insulating material layers, wherein the conductive material layer comprises one or a combination of a silicon layer, a carbon layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, the insulating material layer comprises one or a combination of an aluminum oxide layer, a silicon oxide layer and a silicon nitride layer, the second material layer comprises one or a combination of a carbon fiber layer, a silicon carbide layer, a gallium nitride layer and an aluminum nitride layer, and the electrical conductivity of the second material layer is greater than that of the first material layer.
9. The plasma etching apparatus according to claim 6, wherein: the composite material comprises a P-type composite material or an N-type composite material, and under the action of an external electric field, the surface of the edge ring and a by-product generated by plasma etching have the same charge.
10. The plasma etching apparatus according to claim 6, wherein: the plasma etching device comprises one of a capacitance coupling plasma etching device, an inductance coupling plasma etching device and a microwave electron cyclotron resonance plasma etching device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011428640.4A CN112652515B (en) | 2020-12-09 | 2020-12-09 | Plasma etching device and edge ring thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1521805A (en) * | 2003-02-07 | 2004-08-18 | ���������ƴ���ʽ���� | Plasma processing device, annular element and plasma processing method |
| CN1540738A (en) * | 2003-04-24 | 2004-10-27 | ���������ƴ���ʽ���� | Plasma treatment appts. focusing ring and base |
| CN103811247A (en) * | 2014-02-17 | 2014-05-21 | 清华大学 | Focusing ring for plasma etching and plasma etching device with same |
| CN107564811A (en) * | 2016-06-30 | 2018-01-09 | 台湾积体电路制造股份有限公司 | The manufacture method of semiconductor device |
| US20200258753A1 (en) * | 2019-02-11 | 2020-08-13 | Samsung Electronics Co., Ltd. | Plasma processing apparatus |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1521805A (en) * | 2003-02-07 | 2004-08-18 | ���������ƴ���ʽ���� | Plasma processing device, annular element and plasma processing method |
| CN1540738A (en) * | 2003-04-24 | 2004-10-27 | ���������ƴ���ʽ���� | Plasma treatment appts. focusing ring and base |
| CN103811247A (en) * | 2014-02-17 | 2014-05-21 | 清华大学 | Focusing ring for plasma etching and plasma etching device with same |
| CN107564811A (en) * | 2016-06-30 | 2018-01-09 | 台湾积体电路制造股份有限公司 | The manufacture method of semiconductor device |
| US20200258753A1 (en) * | 2019-02-11 | 2020-08-13 | Samsung Electronics Co., Ltd. | Plasma processing apparatus |
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