CN109256316A - Plasma etching apparatus and its method for etching plasma - Google Patents
Plasma etching apparatus and its method for etching plasma Download PDFInfo
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- CN109256316A CN109256316A CN201811147305.XA CN201811147305A CN109256316A CN 109256316 A CN109256316 A CN 109256316A CN 201811147305 A CN201811147305 A CN 201811147305A CN 109256316 A CN109256316 A CN 109256316A
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- wafer
- etching
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- focusing ring
- ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of plasma etching apparatus and its method for etching plasma, the plasma etching apparatus include: etching cavity；Wafer susceptor is located in the etching cavity；Focusing ring, around the wafer susceptor, to surround the region for placing wafer；Conducting ring is embedded in the focusing ring, and has negative potential.The present invention program can reduce the etch rate in crystal round fringes region when focusing ring is thinning, reduce the influence for even avoiding the etching effect to crystal round fringes region, improve the quality of semiconductor devices.
Description
Technical field
The present invention relates to field of semiconductor manufacture, carve more particularly, to a kind of plasma etching apparatus and its plasma
Etching method.
Background technique
In the art of semiconductor manufacturing, plasma process (Plasma Technology) has a decisive role,
It is widely used in etching technics (such as dry etching) and depositing operation (such as chemical vapor deposition).
During carrying out plasma etching to wafer, since vacuum system is constantly evacuated, until making plasma
The high periphery of center portion concentration is low, causes the etch rate of the fringe region of wafer lower, and the etch rate of central area compared with
It is high.Focusing ring (Focus Ring) would generally be set in plasma etch chamber, in a manner of in a disguised form expanding crystal column surface,
Improve the etch rate of the fringe region of wafer.
However, focusing ring also will receive loss due to during performing etching to wafer, lead to the thickness of focusing ring
It is thinned, so that the height of the plasma above the fringe region of wafer reduces, leads to the etching of the fringe region of wafer
Rate is gradually increased, and influences the quality of semiconductor devices.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of plasma etching apparatus and its method for etching plasma, can
To reduce the etch rate in crystal round fringes region when focusing ring is thinning, the etching even avoided to crystal round fringes region is reduced
The influence of effect improves the quality of semiconductor devices.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of plasma etching apparatus, comprising: etch chamber
Room；Wafer susceptor is located in the etching cavity；Focusing ring, around the wafer susceptor, to surround the area for placing wafer
Domain；Conducting ring is embedded in the focusing ring, and has negative potential
Optionally, the plasma etching apparatus further include: external power, the external power cathode are connected to the conduction
Ring, and the plus earth of the external power.
Optionally, the top surface of the focusing ring is higher than the surface of the wafer susceptor.
Optionally, as the thickness of the focusing ring becomes smaller, the absolute value of the negative potential of the conducting ring becomes larger；Wherein,
Surface of the thickness direction of the focusing ring perpendicular to the wafer susceptor.
Optionally, the material of the conducting ring is selected from: copper, aluminium, titanium and silver.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of plasma of above-mentioned plasma etching apparatus
Lithographic method, comprising: wafer is provided；The wafer is placed in the wafer susceptor；In the etching cavity introduce etc. from
Daughter, and start to etch；In etching process, negative potential is provided to the conducting ring.
Optionally, the negative potential of the conducting ring is adjusted by external power, wherein the cathode of the external power is connected to
The conducting ring, and the plus earth of the external power.
Optionally, the thickness of the focusing ring is monitored in etching process, and according to the thickness of the focusing ring to described
The absolute value of the negative potential of conducting ring is adjusted.
Optionally, as the thickness of the focusing ring becomes smaller, the absolute value of the negative potential of the conducting ring becomes larger；Wherein,
Surface of the thickness direction of the focusing ring perpendicular to the wafer susceptor.
Optionally, the top surface of the focusing ring is higher than the surface of the wafer susceptor.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, a kind of plasma etching apparatus is provided, comprising: etching cavity；Wafer susceptor is located at
In the etching cavity；Focusing ring, around the wafer susceptor, to surround the region for placing wafer；Conducting ring is embedded in
The focusing ring, and there is negative potential.Using the above scheme, by the way that conducting ring is arranged in the inside of focusing ring, and described in control
Conducting ring is negatively charged, electronegative electronics above focusing ring can be made to be ostracised, so that flying to wafer susceptor and quarter
The electronics for losing the cavity wall of chamber is reduced, and is returned the electronics inside plasma by electric field and is increased, so that the bottom end of sheaths
Lifting upwards, since sheaths can be such that the etch rate of the crystal column surface reduces far from crystal column surface, and then due to focusing ring
It is set to the fringe region of wafer, therefore the degree of the sheaths bottom end lifting in crystal round fringes region is higher than the sheath in crystal circle center region
Layer bottom end is lifted degree, so that the etch rate in crystal round fringes region reduces more, is more conducive to when focusing ring is thinning,
The etch rate in crystal round fringes region is reduced, the influence for even avoiding the etching effect to crystal round fringes region is reduced, improves half
The quality of conductor device.
Further, in embodiments of the present invention, during etching, the thickness of the focusing ring is smaller, the conducting ring
The absolute value of negative potential becomes larger, and facilitates when focusing ring is lost more, by using biggish negative potential, so that conducting ring band
Higher negative electricity is lifted the bottom end of sheaths upwards more, to reduce the etching speed in crystal round fringes region to a greater extent
Rate reduces the influence for even avoiding the etching effect to crystal round fringes region, further increases the quality of semiconductor devices.
Detailed description of the invention
Fig. 1 is operative scenario signal of a kind of plasma etching apparatus when focus ring thickness is thicker in the prior art
Figure；
Fig. 2 is operative scenario signal of a kind of plasma etching apparatus when focus ring thickness is relatively thin in the prior art
Figure；
Fig. 3 is that a kind of operative scenario of plasma etching apparatus when focus ring thickness is relatively thin is shown in the embodiment of the present invention
It is intended to；
Fig. 4 is a kind of schematic diagram of the circuit connecting mode of external power in the embodiment of the present invention；
Fig. 5 is a kind of flow chart of the method for etching plasma of plasma etching apparatus in the embodiment of the present invention.
Specific embodiment
In the prior art, during carrying out plasma etching to wafer, it will usually in plasma etch chamber
Middle setting focusing ring improves the etch rate of the fringe region of wafer in a manner of in a disguised form expanding crystal column surface.
Referring to Fig.1, Fig. 1 is yard of a kind of plasma etching apparatus when focus ring thickness is thicker in the prior art
Scape schematic diagram.
The plasma etching apparatus may include etching cavity 100, wafer susceptor 110 and focusing ring 120.
Wherein, the wafer susceptor 110 is located in the etching cavity 100, and the wafer susceptor 110 can be for containing quiet
The pedestal of electric sucker, for adsorbing wafer 111.
The focusing ring 120 can surround the wafer susceptor 110, to surround the region for placing wafer 111.Fig. 1
120 thickness of focusing ring shown is thicker, such as can be thickness L.
In the etching cavity 100, plasma 140 is introduced, the plasma 140 is used to carry out wafer 111
Etching.
Specifically, plasma 140 is not a heat balance system, due to the difference in the quality of electronics and carbonium
Different, electronics and carbonium inside plasma 140 have different movement velocitys, i.e. temperature, since electron mass is small, more
It is easy by electric field acceleration, electronics has the speed bigger than carbonium.Due to the environment of general restriction plasma 140, such as
The cavity wall of wafer susceptor 110 and etching cavity 100 is ground connection, and current potential is lower, in this way in plasma 140, movement speed
It spends fast electronics to be guided, and the slow carbonium of movement velocity collects on and wafer susceptor 110 and etching cavity 100
Cavity wall has the position of certain distance and is stabilized.
Further, the electric field in etching cavity 100 by due to warm-up movement and fly to wafer susceptor 110 and etch chamber
The electronics of the cavity wall of room 100 is returned inside plasma 140, in this way in plasma 140 and wafer susceptor 110 and etch chamber
Sheaths 130 are just produced between the cavity wall of room 100.
As shown in Figure 1, there is a certain distance, such as in wafer between the bottom end of sheaths 130 and the surface of wafer 111
111 fringe region, distance are D.Further, the higher peripheral part concentration of 140 center portion concentration of plasma is lower, because
The fringe region distance D of the bottom end of this sheaths 130 and wafer 111 is commonly greater than the bottom end of sheaths 130 and the center of wafer 111
The distance in region.
However during performing etching to wafer, focusing ring also will receive loss, and the thickness of focusing ring is caused to be thinned.
Referring to Fig. 2, Fig. 2 is yard of a kind of plasma etching apparatus when focus ring thickness is relatively thin in the prior art
Scape schematic diagram.
The plasma etching apparatus may include etching cavity 100, wafer susceptor 110 and focusing ring 121.
Wherein, the focusing ring 121 can surround the wafer susceptor 110, to surround the area for placing wafer 111
Domain.Fig. 2 shows 121 thinner thickness of focusing ring, such as can be thickness l, and l be less than L.
In the etching cavity 100, plasma 140 is introduced, the plasma 140 is used to carry out wafer 111
Etching.
Specifically, since the height of the plasma 140 above the fringe region of wafer 111 reduces, lead to sheaths 131
The distance between bottom end and the surface of wafer 111 reduce, for example, distance d, and d is less than D, so that the edge of wafer 111
The etch rate in region increases, and continues using the etch rate and etching duration in standard technology, can be to semiconductor devices
Quality has an impact, and especially will affect the device of the fringe region of wafer 111.
The present inventor has found that in the prior art, focusing ring 121 is in the process for etching wafer 111 after study
In will necessarily be lost, however to focusing ring 121 carry out frequently replace but be easy increase production cost and reduce production efficiency；
Continuing to use the focusing ring 121 after thickness is thinned then is easy to cause the etch rate of the fringe region of wafer 111 to increase, and influences half
The quality of conductor device.
In embodiments of the present invention, a kind of plasma etching apparatus is provided, comprising: etching cavity；Wafer susceptor is located at
In the etching cavity；Focusing ring, around the wafer susceptor, to surround the region for placing wafer；Conducting ring is embedded in
The focusing ring, and there is negative potential.Using the above scheme, by the way that conducting ring is arranged in the inside of focusing ring, and described in control
Conducting ring is negatively charged, electronegative electronics above focusing ring can be made to be ostracised, so that flying to wafer susceptor and quarter
The electronics for losing the cavity wall of chamber is reduced, and is returned the electronics inside plasma by electric field and is increased, so that the bottom end of sheaths
Lifting upwards, since sheaths can be such that the etch rate of the crystal column surface reduces far from crystal column surface, and then due to focusing ring
It is set to the fringe region of wafer, therefore the degree of the sheaths bottom end lifting in crystal round fringes region is higher than the sheath in crystal circle center region
Layer bottom end is lifted degree, so that the etch rate in crystal round fringes region reduces more, is more conducive to when focusing ring is thinning,
The etch rate in crystal round fringes region is reduced, the influence for even avoiding the etching effect to crystal round fringes region is reduced, improves half
The quality of conductor device.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 3 is that a kind of operative scenario of plasma etching apparatus when focus ring thickness is relatively thin is shown in the embodiment of the present invention
It is intended to.
The plasma etching apparatus may include etching cavity 200, wafer susceptor 210, focusing ring 220 and conduction
Ring 260.
Wherein, the wafer susceptor 210 is located in the etching cavity 200, and the wafer susceptor 210 can be for containing quiet
The pedestal of electric sucker, for adsorbing wafer 211.
The focusing ring 220 can surround the wafer susceptor 210, to surround the region for placing wafer 211.
In specific implementation, the material of the focusing ring 220 can be selected from: silicon and germanium.
Preferably, the material of the semiconductor substrate of the wafer 211 and the material one of the focusing ring 220 can be set
It causes, such as the material of semiconductor substrate of the wafer 211 can be silicon, germanium, SiGe, silicon carbide, GaAs or gallium indium
Etc. material appropriate, to generate the effect on the covert surface for expanding wafer 211.
Further, since the material of the focusing ring 220 is consistent with the material of semiconductor substrate of the wafer 211,
When then carrying out plasma etching to semiconductor substrate, it is easy to form loss to focusing ring 220, leads to the thickness of focusing ring 220
It is thinning, such as can be the thickness c shown in Fig. 3.
In the etching cavity 200, plasma 240 is introduced, the plasma 240 is used to carry out wafer 211
Etching, can produce sheaths 230 between plasma 240 and the cavity wall of wafer susceptor 210 and etching cavity 200.
In specific implementation, the conducting ring 260 can be embedded in the focusing ring 220, and have negative potential.
Specifically, the material of the conducting ring 260 can be metal material, such as can be selected from: copper, aluminium, titanium and silver；
The material of the conducting ring 260 can also be nonmetallic materials, such as can be polysilicon (Poly) material.
In the present invention, there is negative potential by setting conducting ring 260, the focusing ring 220 on 211 periphery of wafer can be made
The electronegative electronics in top is ostracised, so that the electronics for flying to the cavity wall of wafer susceptor 210 and etching cavity 200 subtracts
It is few, it returns the electronics inside plasma and increases, so that the bottom end of sheaths 230 is lifted upwards, sheaths as shown in Figure 3
The distance between 230 bottom end and the fringe region of wafer 211 are A, can be greater than not set conducting ring 260 in focusing ring 220
When distance d (referring to Fig. 2).
Further, the surface due to sheaths 230 far from wafer 211 can reduce etch rate, especially in wafer
211 fringe region.Specifically, since focusing ring 220 is set to the fringe region of wafer 211,211 edge of wafer
The degree of 230 bottom end of sheaths lifting is higher than 230 bottom end of sheaths among wafer 211 and is lifted degree, so that compared to wafer
211 central area, the etch rate of edge region reduce more, are more conducive to cause edge to be carved focusing ring 220 is thinning
When losing speed increase, the etch rate at 211 edge of wafer is balanced.
Further, as the thickness of the focusing ring 220 becomes smaller, the absolute value of the negative potential of the conducting ring 260 can
To become larger.Wherein, surface of the thickness direction of the focusing ring 220 perpendicular to the wafer susceptor 210.
Specifically, the thickness of the focusing ring 220 becomes smaller, then means surface of the sheaths 230 apart from wafer 211 more
Closely, plasma 240 improves the etch rate of the fringe region of wafer 211 more, more needs to reduce the edge of wafer 211
The etch rate in region.
In embodiments of the present invention, during etching, the thickness of the focusing ring 220 is smaller, and the conducting ring 260 is born
The absolute value of potential becomes larger, and facilitates when focusing ring 220 is lost more, by using biggish negative potential, so that conducting ring
260, with higher negative electricity, are lifted the bottom end of sheaths 230 upwards more, to reduce by 211 marginal zone of wafer to a greater extent
The etch rate in domain reduces the influence for even avoiding the etching effect to 211 fringe region of wafer, further increases semiconductor device
The quality of part.
Further, the top surface of the focusing ring 220 can be higher than the surface of the wafer susceptor 210.
In embodiments of the present invention, it is higher than the wafer susceptor 210 by the way that the top surface of the focusing ring 220 is arranged
Surface can make the surface of the focusing ring 220 close to the surface of even higher than wafer 211, to preferably generate covert
Expand the effect on the surface of wafer 211.
In embodiments of the present invention, by the way that conducting ring 260 is arranged in the inside of focusing ring 220, and the conducting ring is controlled
260 is negatively charged, and the electronegative electronics in the top of focusing ring 220 can be made to be ostracised so that fly to wafer susceptor 210 and
The electronics of the cavity wall of etching cavity 200 is reduced, and is increased by the electronics that electric field is returned inside plasma 240, so that sheath
The bottom end of layer 230 is lifted upwards, since sheaths 230 are far from 211 surface of wafer, can make the etching speed on 211 surface of wafer
Rate reduces, and then since focusing ring 220 is set to the fringe region of wafer 211, the sheaths 230 of 211 fringe region of wafer
230 bottom end of sheaths that the degree of bottom end lifting is higher than 211 central area of wafer is lifted degree, so that 211 marginal zone of wafer
The etch rate in domain reduces more, is more conducive to when focusing ring 220 is thinning, reduces the etch rate of 211 fringe region of wafer,
The influence for even avoiding the etching effect to 211 fringe region of wafer is reduced, the quality of semiconductor devices is improved.
Further, the plasma etching apparatus can also include: external power.The conducting ring 260 has negative electricity
Gesture can be using external power realization.
Referring to Fig. 4, Fig. 4 is a kind of schematic diagram of the circuit connecting mode of external power in the embodiment of the present invention.
Conducting ring 260 can be embedded in focusing ring 220, and the cathode of the external power 270 can connect to the conduction
Ring 260, and the plus earth of the external power 270.Then the potential of conducting ring 260 is lower than ground terminal, namely is negative potential.
It should be pointed out that since conducting ring 260 is ring assembling structure and is embedded in focusing ring 220, in the present invention
In embodiment, for external power 270 link position of the cathode on the conducting ring 260 with no restriction, as long as external power 270
Cathode connect with any one place of the conducting ring 260, conducting ring 260 may be implemented with negative potential.
It is understood that in embodiments of the present invention, being not limited to make conducting ring 260 that there is negative electricity using external power realization
The mode of gesture can also adopt with other appropriate means, so that conducting ring 260 has negative potential.
Referring to Fig. 5, Fig. 5 is a kind of stream of the method for etching plasma of plasma etching apparatus in the embodiment of the present invention
Cheng Tu.The method for etching plasma may include step S51 to step S54:
Step S51: wafer is provided；
Step S52: the wafer is placed in the wafer susceptor；
Step S53: introducing plasma in the etching cavity, and starts to etch；
Step S54: in etching process, negative potential is provided to the conducting ring.
It is possible to further adjust the negative potential of the conducting ring by external power, wherein the cathode of the external power
It is connected to the conducting ring, and the plus earth of the external power.
It is possible to further monitor the thickness of the focusing ring in etching process, and according to the thickness of the focusing ring
The absolute value of the negative potential of the conducting ring is adjusted.
Further, as the thickness of the focusing ring becomes smaller, the absolute value of the negative potential of the conducting ring can become larger；
Wherein, surface of the thickness direction of the focusing ring perpendicular to the wafer susceptor.
Further, the top surface of the focusing ring can be higher than the surface of the wafer susceptor.
Further, the material of the conducting ring can be selected from: copper, aluminium, titanium and silver.
Further, the material of the focusing ring can be selected from: silicon and germanium.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of plasma etching apparatus characterized by comprising
Etching cavity；
Wafer susceptor is located in the etching cavity；
Focusing ring, around the wafer susceptor, to surround the region for placing wafer；
Conducting ring is embedded in the focusing ring, and has negative potential.
2. plasma etching apparatus according to claim 1, which is characterized in that further include:
External power, the external power cathode are connected to the conducting ring, and the plus earth of the external power.
3. plasma etching apparatus according to claim 1, which is characterized in that the top surface of the focusing ring is higher than
The surface of the wafer susceptor.
4. plasma etching apparatus according to claim 1, which is characterized in that as the thickness of the focusing ring becomes
Small, the absolute value of the negative potential of the conducting ring becomes larger；
Wherein, surface of the thickness direction of the focusing ring perpendicular to the wafer susceptor.
5. plasma etching apparatus according to claim 1, which is characterized in that the material of the conducting ring is selected from: copper,
Aluminium, titanium and silver.
6. a kind of method for etching plasma based on plasma etching apparatus described in claim 1, which is characterized in that packet
It includes:
Wafer is provided；
The wafer is placed in the wafer susceptor；
Plasma is introduced in the etching cavity, and starts to etch；
In etching process, negative potential is provided to the conducting ring.
7. method for etching plasma according to claim 6, which is characterized in that
The negative potential of the conducting ring is adjusted by external power, wherein the cathode of the external power is connected to the conducting ring,
And the plus earth of the external power.
8. method for etching plasma according to claim 6, which is characterized in that
The thickness of the focusing ring is monitored in etching process, and according to the thickness of the focusing ring to the negative electricity of the conducting ring
The absolute value of gesture is adjusted.
9. method for etching plasma according to claim 8, which is characterized in that as the thickness of the focusing ring becomes
Small, the absolute value of the negative potential of the conducting ring becomes larger；
Wherein, surface of the thickness direction of the focusing ring perpendicular to the wafer susceptor.
10. method for etching plasma according to claim 6, which is characterized in that the top surface of the focusing ring is high
In the surface of the wafer susceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811147305.XA CN109256316A (en) | 2018-09-29 | 2018-09-29 | Plasma etching apparatus and its method for etching plasma |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811147305.XA CN109256316A (en) | 2018-09-29 | 2018-09-29 | Plasma etching apparatus and its method for etching plasma |
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| CN109256316A true CN109256316A (en) | 2019-01-22 |
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| CN201811147305.XA Pending CN109256316A (en) | 2018-09-29 | 2018-09-29 | Plasma etching apparatus and its method for etching plasma |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811247A (en) * | 2014-02-17 | 2014-05-21 | 清华大学 | Focusing ring for plasma etching and plasma etching device with same |
| CN106920729A (en) * | 2015-12-28 | 2017-07-04 | 中微半导体设备(上海)有限公司 | The plasma processing apparatus and method of a kind of uniform etching substrate |
| CN107644802A (en) * | 2016-07-21 | 2018-01-30 | 中微半导体设备(上海)有限公司 | Plasma etching apparatus and its edge ring assembly and electrostatic chuck |
| CN108074787A (en) * | 2016-11-10 | 2018-05-25 | 北京北方华创微电子装备有限公司 | Lower electrode arrangement and semiconductor processing equipment |
-
2018
- 2018-09-29 CN CN201811147305.XA patent/CN109256316A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811247A (en) * | 2014-02-17 | 2014-05-21 | 清华大学 | Focusing ring for plasma etching and plasma etching device with same |
| CN106920729A (en) * | 2015-12-28 | 2017-07-04 | 中微半导体设备(上海)有限公司 | The plasma processing apparatus and method of a kind of uniform etching substrate |
| CN107644802A (en) * | 2016-07-21 | 2018-01-30 | 中微半导体设备(上海)有限公司 | Plasma etching apparatus and its edge ring assembly and electrostatic chuck |
| CN108074787A (en) * | 2016-11-10 | 2018-05-25 | 北京北方华创微电子装备有限公司 | Lower electrode arrangement and semiconductor processing equipment |
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Application publication date: 20190122 |