CN108493235A - A kind of MSM structures and preparation method thereof based on Mo/ZnON/Mo - Google Patents
A kind of MSM structures and preparation method thereof based on Mo/ZnON/Mo Download PDFInfo
- Publication number
- CN108493235A CN108493235A CN201810247940.9A CN201810247940A CN108493235A CN 108493235 A CN108493235 A CN 108493235A CN 201810247940 A CN201810247940 A CN 201810247940A CN 108493235 A CN108493235 A CN 108493235A
- Authority
- CN
- China
- Prior art keywords
- znon
- glass substrate
- layers
- msm structures
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000011521 glass Substances 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000000151 deposition Methods 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 76
- 238000005530 etching Methods 0.000 claims description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 238000004544 sputter deposition Methods 0.000 claims description 28
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000011701 zinc Substances 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000005477 sputtering target Methods 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 5
- 238000011161 development Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000002085 persistent effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 Au/Pt Chemical class 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Abstract
The present invention discloses a kind of MSM structures and preparation method thereof based on Mo/ZnON/Mo, the MSM structures are diode in parallel structure or vertical diode structure, the MSM structures include glass substrate and the epitaxial layer that is deposited in glass substrate, the epitaxial layer includes at least 2 layers in Mo metal electrode layers, ZnON film layers, is formed between adjacent layer by depositing.Can solve the problem of existing Schottky diode made annealing treatment, the pretreatment complex process of oxygen plasma etch or UV ozone, simple for process, performance is remarkable, can be prepared with large area low cost, can be applied to flexible electronic device field.
Description
Technical field
The present invention relates to Schottky diode technical field of semiconductor device, and in particular to a kind of based on Mo/ZnON/Mo's
MSM structures and preparation method thereof.
Background technology
In terms of flexible electronic, such as RFID, flexible solar battery, flexible circuit, high performance Schottky diode
It plays a crucial role.In addition, Schottky contacts also appear in the source-drain electrode contact of metal oxide TFT.In recent years,
People have comparable research, two pole of a-IGZO base schottkies to two pole (SBD) of a-IGZO base schottkies potential barrier and IGZO films
Pipe is concerned due to the advantage of its high-speed cruising.But the characteristic of this Schottky contacts is highly dependent on and polynary partly leads
The oxygen content of proportioning in body, especially metal-semiconductor interface, carry out annealing or by introduce oxygen etc. from
Daughter etches or the pretreatment of UV ozone at metal-semiconductor interface to generate oxygen-rich layer.It is therefore desirable to develop a kind of work
Skill is simple, and performance is remarkable, the Schottky diode that can be prepared with large area low cost, to meet the needs of flexible electronic development.
Invention content
It is an object of the invention to：It is made annealing treatment for above-mentioned existing Schottky diode, oxygen plasma
Body etches or the pretreatment of UV ozone, the problem of complex process, the present invention provide a kind of MSM structures based on Mo/ZnON/Mo and
Preparation method.
Technical solution provided by the invention is a kind of MSM structures based on Mo/ZnON/Mo, and the MSM structures are parallel two
Pole pipe structure or vertical diode structure, the MSM structures include glass substrate and the epitaxial layer that is deposited in glass substrate,
The epitaxial layer includes at least 2 layers in Mo metal electrode layers, ZnON film layers, is formed between adjacent layer by depositing.
Preferably, the MSM structures include glass substrate and the epitaxial layer that is deposited in glass substrate, the epitaxial layer
Including Mo metal electrode layers and ZnON film layers, the Mo metal electrode layers include etching formed 2 metal electricity by Mo films
Pole makes the MSM structures form the back-to-back Schottky diode structure of parallel direction.
More preferably, the MSM structures include glass substrate and the epitaxial layer that is deposited in glass substrate, described outer
Prolong that layer is Mo metal electrode layers and ZnON film layers are arranged in order and to be formed or the epitaxial layer is ZnON film layers and Mo metal electricity
Pole layer is arranged in order to be formed.
Preferably, the MSM structures include glass substrate and the epitaxial layer that is deposited in glass substrate, the epitaxial layer
Including ZnON film layers and 2 layers of Mo metal electrode layers, the ZnON film layers are located between 2 layers of Mo metal electrode layers, make described
MSM structures form the back-to-back Schottky diode structure of vertical direction.
Technical scheme provides a kind of preparation method of the above-mentioned MSM structures based on Mo/ZnON/Mo,
When the MSM structures are diode in parallel structure, the preparation method comprises the following steps：
(1) glass substrate is cleaned, obtains glass substrate；
(2) each layer of epitaxial layer is sequentially depositing, etched on a glass substrate up to the MSM structures；
Wherein, the epitaxial layer includes at least 2 layers in Mo metal electrode layers, ZnON film layers；
When the MSM structures are vertical diode structure, the preparation method comprises the following steps：
(1) glass substrate is cleaned, obtains glass substrate；
(2) it is sequentially depositing each layer of epitaxial layer on a glass substrate up to the MSM structures；
Wherein, the epitaxial layer includes at least 2 layers in Mo metal electrode layers, ZnON film layers, in deposition ZnON
Operation is also performed etching after film layer.
Preferably, the deposition method of the ZnON film layers is：Using radio frequency magnetron sputtering method, with 99.99% purity
Zinc target be sputtering target material, using argon gas, oxygen, high pure nitrogen mixed gas as sputter gas, argon gas is passed through before deposition to zinc
Target carries out the pre-sputtering of 2~10min, in sputtering process the gas flow of argon gas and oxygen be respectively 10~50sccm and 0.1~
10sccm, nitrogen gas flow are 10~150sccm, and sputtering time is 1~20min, and sputtering power is 60~150W, substrate temperature
Degree is 20~30 DEG C, and generation ZnON thin film layer thickness is 10~100nm.
More preferably, the gas flow ratio of the nitrogen and oxygen is 10~150.
More preferably, the gas flow ratio of the nitrogen and oxygen is 40~100.
Preferably, the lithographic method of the ZnON film layers is：Using photoetching is carried out after spin coating spin coating, the time for exposure is set
For 5s, and mask plate position is adjusted to form required pattern, developed with 1~4%NaOH solution after end exposure, when development
Between be 5-10s, performed etching with 0.5~3% acid solution, etch period be 5~15s, etching temperature be 20~30 DEG C.
Preferably, the deposition method of the Mo metal electrode layers is：It is pure with 99.99% using DC magnetron sputtering method
The molybdenum target of degree is sputtering target material, and the pre-sputtering that argon gas carries out molybdenum target 2~10min is passed through before deposition, using argon gas as sputter gas,
The thin film sputtering time is 2~10min, and underlayer temperature is 20~30 DEG C.
Preferably, the lithographic method of the Mo metal electrode layers is：Using carrying out photoetching after spin coating spin coating, when setting exposure
Between be 5s, and adjust mask plate position to form required pattern, develop with 1~4%NaOH solution after end exposure, development
Time is 10s, with 4~15%H2O2Solution performs etching, and etch period is 10~25s, and etching temperature is 20~30 DEG C.
Traditional a-IGZO semiconductor film membrane properties depend on In/Ga/Zn/O2Ratio, technique controlling difficulty is big, and this
ZnON in application technical solution only needs to control nitrogen oxygen, and target contains only Zn metallic elements, easily controllable experiment process, and
Due to there is no precious metal ingredient, cost to be greatly reduced；There are high density in traditional a-IGZO semiconductive thin film band structures
Trap states, it is necessary to carry out up to 400 DEG C of annealing temperatures or oxygen plasma treatment, and these gap states lead to Persistent Photocurrent
Height influences to use as photodetector, and ZnON energy gaps are narrow, and gap state density is smaller, therefore Persistent Photocurrent is very low, no
Need annealing that can realize noncrystal membrane by regulating and controlling nitrogen content at normal temperatures, preparation process is further simplified；Traditional
A-IGZO semiconductor thin film structures are complicated, and surface state seriously limits the realization of Schottky barrier, it usually needs use costliness
The metals such as Au/Pt, and the presence due to aoxidizing Gallium, the carrier mobility of a-IGZO is relatively low, Schottky-barrier diode performance
It is limited, and the surface state of ZnON is since the introducing of nitrogen is minimized, and carrier mobility is higher, therefore can be with Mo shapes
At Schottky barrier, meet the theoretical model of Metals-semiconductor contacts.Therefore, the MSM structure preparation processes of the application are simple,
Can solve existing Schottky diode made annealing treatment, the pretreatment of oxygen plasma etch or UV ozone, work
The problem of skill complexity.
In addition, technical scheme is successively to perform etching to prepared ZnON films and Mo films, etching liquid
Selection and technological parameter determination so that the film that front is formed will not be damaged in etching process, so technique
Etching technics specification protect well it is graphical after film.
Based on described above, compared with prior art, the present invention advantage is：(1) ZnON films have preferable
Photosensitive property, the Mo/ZnON/Mo Schottky diodes of parallel construction can be applied to photoelectric detector field and photosensitive area face
Product is easy to adjust；(2) Mo/ZnON/Mo leans against back type Schottky diode and can be applied to flexible electronic device field；(3) originally
Prepared by the Mo/ZnON/Mo structures of invention convenient, and preparation process flow is simple, without being made annealing treatment, oxygen plasma etch
Or the pretreatment of UV ozone, it is easy to larger in area.
Description of the drawings
Fig. 1 is the section signal of the MSM structure Schottky diodes based on Mo/ZnON/Mo described in the embodiment of the present invention 1
Figure；
Fig. 2 is the section signal of the MSM structure Schottky diodes based on Mo/ZnON/Mo described in the embodiment of the present invention 2
Figure；
Fig. 3 is the section signal of the MSM structure Schottky diodes based on Mo/ZnON/Mo described in the embodiment of the present invention 3
Figure；
Fig. 4 is the vertical view of Fig. 3；
Fig. 5 is the transmitted spectrum of the ZnON films prepared under the conditions of different oxygen nitrogen flow-rate ratios.
Specific implementation mode
In order to make those skilled in the art more fully understand technical scheme of the present invention, with reference to specific embodiment pair
The present invention is described in further detail.
Embodiment 1
A kind of MSM structures based on Mo/ZnON/Mo as shown in Figure 1, wherein 100 be glass substrate, 101 is thin for ZnON
Film layer, 102 be Mo metal electrode layers, and Mo metal electrode layers include etching formed 2 metal electrodes by Mo films；The structure is
Diode in parallel structure, there are two back-to-back Schottky diodes.Preparation method includes the following steps：
(1) cleaning of glass substrate；
(2) ZnON films are prepared in the glass substrate；
(3) prepared ZnON films are performed etching；
(4) Mo films are prepared on the ZnON films after the etching；
(5) prepared Mo films are performed etching to form two metal electrodes.
Wherein, the step of step (1) cleaning substrate includes：
A, glass substrate is cleaned with ultrasonic detergent first, is cleaned by ultrasonic repeatedly with deionized water later；
B, proper amount of acetone is poured into beaker, glass substrate is put into beaker, is cleaned by ultrasonic 15min；
C, another beaker is taken, appropriate absolute ethyl alcohol is poured into, substrate is put into beaker and is ultrasonically treated 15min；
D, the glass substrate after ultrasound is put into the beaker equipped with deionized water, ultrasonic 15min；
E, glass substrate is dried up with High Purity Nitrogen air gun, then puts in baking oven and continues to dry.
Step (2) ZnON method for manufacturing thin film is：
Using radio frequency magnetron sputtering method, using the zinc target of 99.99% purity as sputtering target material, with argon gas, oxygen, High Purity Nitrogen
The mixed gas of gas is sputter gas, and sputtering front cavity base vacuum is less than 5 × 10-4Pa, to remove the air in cavity, sputtering
Power is 60-150W, and underlayer temperature is room temperature, carries out the pre-sputtering of 5min, pre-sputtering power before deposition ZnON films to zinc target
ZnON quality of forming film is improved to remove zinc target surface impurity for 120W, the gas flow of argon gas and oxygen is fixed in sputtering process
For 15sccm and 1sccm, nitrogen gas flow set is 10~150sccm, and generation film thickness is 10~100nm.
Step (3) ZnON film etching methods are：
Sol evenning machine turntable rotating speed is set as 500 turns of low speed/min, 5s, 3000 turns of high speed/min, 30s, after spin coating
Substrate is positioned in baking oven and toasts 2min, oven temperature is 120 DEG C；It is placed it on photoetching machine platform after substrate cooling,
The setting time for exposure is 5s, and adjusts mask plate position to form required pattern；1~4%NaOH solution is selected after end exposure
Develop, developing time is 5~10s, selects 0.5~2%HCl solution to perform etching the substrate after development, etch period
For 5~15s, etching temperature is 25 DEG C；The substrate after etching is dried up using nitrogen gun, then substrate is put into baking oven and is toasted
5min, baking temperature are 120 DEG C.
Step (4) prepares Mo film process：
Using DC magnetron sputtering method, using the molybdenum target of 99.99% purity as sputtering target material, with sputtering argon, splash
It penetrates front cavity base vacuum and is less than 5 × 10-4Pa, to remove the air in cavity, sputtering current is set as 0.3A, argon flow amount appropriateness
So that operating pressure within 3Pa, carries out molybdenum target before deposition Mo films the pre-sputtering of 5min, to remove molybdenum target surface impurity,
Molybdenum film quality of forming film is improved, the thin film sputtering time is 3min, and underlayer temperature is 25 DEG C.
Step (5) Mo film etching methods are：
Sol evenning machine turntable rotating speed is set as 500 turns of low speed/min, 5s, 3000 turns of high speed/min, 30s, after spin coating
Substrate is positioned in baking oven and toasts 2min, oven temperature is 120 DEG C；It is placed it on photoetching machine platform after substrate cooling,
The setting time for exposure is 5s, and adjusts mask plate position to form required pattern；1~4%NaOH solution is selected after end exposure
Develop, developing time 10s；Select 8~10%H2O2Solution performs etching the substrate after development, etch period 10
~25s, etching temperature are 25 DEG C of room temperature；The substrate after etching is dried up using nitrogen gun, then substrate is put into baking oven and is toasted
5min, baking temperature are 120 DEG C, it should be noted that Mo films cannot damage ZnON films when etching, so to etching
The selection of liquid has certain requirement.
Embodiment 2
A kind of MSM structures based on Mo/ZnON/Mo described in the present embodiment, structure such as embodiment 1, preparation method
With embodiment 1 difference lies in：
In step (2) ZnON method for manufacturing thin film, the pre-sputtering of 2min is carried out before deposition ZnON films to zinc target, was sputtered
The gas flow of argon gas and oxygen is fixed as 10sccm and 0.1sccm in journey, and nitrogen gas flow set is 10~150sccm.
In step (3) ZnON film etching methods, 2~3%HCl solution is selected to perform etching the substrate after development.
Step (4) is prepared in Mo film process, the pre-sputtering for carrying out 2min before Mo films to molybdenum target is deposited, when thin film sputtering
Between be 10min.
In step (5) Mo film etching methods, 4~8%H is selected2O2Solution performs etching the substrate after development.
Embodiment 3
A kind of MSM structures based on Mo/ZnON/Mo described in the present embodiment, structure such as embodiment 1, preparation method
With embodiment 1 difference lies in：
In step (2) ZnON method for manufacturing thin film, the pre-sputtering of 10min, sputtering are carried out before deposition ZnON films to zinc target
The gas flow of argon gas and oxygen is fixed as 50sccm and 10sccm in the process, and nitrogen gas flow set is 10~150sccm.
In step (3) ZnON film etching methods, 0.5~2%HCl solution is selected to perform etching the substrate after development.
Step (4) is prepared in Mo film process, carries out the pre-sputtering of 10min, thin film sputtering before deposition Mo films to molybdenum target
Time is 2min.
In step (5) Mo film etching methods, 10~15%H is selected2O2Solution performs etching the substrate after development.
Embodiment 4
A kind of MSM structures based on Mo/ZnON/Mo as shown in Figure 2, wherein 200 be glass substrate, 201 be Mo metals
Electrode layer, Mo metal electrode layers include etching formed 2 metal electrodes by Mo films, and 202 be ZnON film layers；The present embodiment
As different from Example 1, what is first prepared on a glass substrate is Mo metal electrode layers, then is prepared on Mo metal electrode layers
ZnON film layers form Schottky contacts, which is similarly diode in parallel structure, and there are two back-to-back Schottky two
Pole pipe.Preparation method includes the following steps：
(1) cleaning of glass substrate；
(2) Mo films are prepared in the glass substrate；
(3) prepared Mo films are performed etching to form two metal electrodes；
(4) ZnON films are prepared on the Mo films after the etching；
(5) prepared ZnON films are performed etching and forms contact berrier with Mo electrodes.
Wherein, the cleaning method of glass substrate, the preparation of Mo metal electrode layers and ZnON films, etching flow such as embodiment
Described in 1.
Embodiment 5
A kind of MSM structures based on Mo/ZnON/Mo as shown in Figure 3,4, which is vertical diode structure, wherein 300
It is the Mo metal electrode layers of first layer for glass substrate, 301,302 be ZnON films, and 303 be the Mo metal electrode layers of the second layer,
ZnON films are located between two Mo metal electrode layers, are two back-to-back Schottky diodes in vertical direction.Its preparation side
Method includes the following steps：
(1) cleaning of glass substrate；
(2) the Mo metal electrode layers of first layer are prepared over the substrate；
(3) ZnON films and etching forming are prepared on the Mo metal electrode layers of the first layer；
(4) the Mo metal electrode layers of the second layer are prepared on the ZnON films.
Wherein, the cleaning method of glass substrate, the preparation of Mo metal electrode layers and ZnON films, etching flow such as embodiment
Described in 1, in the present embodiment, ZnON films are prepared after the Mo metal electrode layers of first layer, so the Mo gold of first layer
The etching liquid for belonging to electrode layer is not strict with.
Embodiment 6
The MSM structures based on Mo/ZnON/Mo described in the present embodiment, structure such as embodiment 1, preparation method and reality
Apply example 1 difference lies in：
In step (2) ZnON method for manufacturing thin film, the gas flow of argon gas and oxygen is fixed as 15sccm in sputtering process
And 1sccm, nitrogen gas flow set is 40,60,80,4 groups of 100sccm, transmitted spectrum is carried out to above-mentioned 4 groups of MSM structures
Detection, obtains experimental data such as Fig. 5.From fig. 5, it can be seen that (1 under the conditions of different oxygen nitrogen flow-rate ratios:40,1:60,1:80,
1:100), ZnON films all have photonasty, and therefore, the Mo/ZnON/Mo Schottky diodes of parallel construction can be applied to photoelectricity
Sensitive detection parts field and photosensitive area area is easy to adjust.
It the above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
The limitation of the present invention, protection scope of the present invention should be subject to claim limited range.For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these change
Protection scope of the present invention is also should be regarded as into retouching.
Claims (10)
1. a kind of MSM structures based on Mo/ZnON/Mo, it is characterised in that：The MSM structures are diode in parallel structure or hang down
Straight diode structure, the MSM structures include glass substrate and the epitaxial layer that is deposited in glass substrate, the epitaxial layer packet
At least 2 layers in Mo metal electrode layers, ZnON film layers are included, is formed between adjacent layer by depositing.
2. a kind of MSM structures based on Mo/ZnON/Mo according to claim 1, it is characterised in that：The MSM structures packet
The epitaxial layer for including glass substrate and being deposited in glass substrate, the epitaxial layer include Mo metal electrode layers and ZnON films
Layer, the Mo metal electrode layers include etching formed 2 metal electrodes by Mo films, and the MSM structures is made to form parallel side
To back-to-back Schottky diode structure.
3. a kind of MSM structures based on Mo/ZnON/Mo according to claim 2, it is characterised in that：The MSM structures packet
The epitaxial layer for including glass substrate and being deposited in glass substrate, the epitaxial layer be Mo metal electrode layers and ZnON film layers according to
Secondary arrangement form or the epitaxial layer are that ZnON film layers and Mo metal electrode layers are arranged in order to be formed.
4. a kind of MSM structures based on Mo/ZnON/Mo according to claim 1, it is characterised in that：The MSM structures packet
The epitaxial layer for including glass substrate and being deposited in glass substrate, the epitaxial layer include ZnON film layers and 2 layers of Mo metal electricity
Pole layer, the ZnON film layers are located between 2 layers of Mo metal electrode layers, and the MSM structures is made to form back-to-back Xiao of vertical direction
Special based diode structure.
5. a kind of preparation method of MSM structure of Claims 1 to 4 any one of them based on Mo/ZnON/Mo, feature exist
In：
When the MSM structures are diode in parallel structure, the preparation method comprises the following steps：
(1) glass substrate is cleaned, obtains glass substrate；
(2) each layer of epitaxial layer is sequentially depositing, etched on a glass substrate up to the MSM structures；
Wherein, the epitaxial layer includes at least 2 layers in Mo metal electrode layers, ZnON film layers；
When the MSM structures are vertical diode structure, the preparation method comprises the following steps：
(1) glass substrate is cleaned, obtains glass substrate；
(2) it is sequentially depositing each layer of epitaxial layer on a glass substrate up to the MSM structures；
Wherein, the epitaxial layer includes at least 2 layers in Mo metal electrode layers, ZnON film layers, in deposition ZnON films
Operation is also performed etching after layer.
6. a kind of preparation method of MSM structures based on Mo/ZnON/Mo according to claim 5, it is characterised in that：Institute
The deposition method for stating ZnON film layers is：Using radio frequency magnetron sputtering method, using the zinc target of 99.99% purity as sputtering target material,
Using argon gas, oxygen, high pure nitrogen mixed gas as sputter gas, be passed through before deposition argon gas to zinc target carry out 2~10min it is pre-
It sputters, the gas flow of argon gas and oxygen is respectively 10~50sccm and 0.1~10sccm, nitrogen gas flow in sputtering process
For 10~150sccm, sputtering time is 1~20min, and sputtering power is 60~150W, and underlayer temperature is 20~30 DEG C, is generated
ZnON thin film layer thickness is 10~100nm.
7. a kind of preparation method of MSM structures based on Mo/ZnON/Mo according to claim 6, it is characterised in that：Institute
The gas flow ratio for stating nitrogen and oxygen is 10~150.
8. a kind of preparation method of MSM structures based on Mo/ZnON/Mo according to claim 5, it is characterised in that：Institute
The lithographic method for stating ZnON film layers is：Using photoetching is carried out after spin coating spin coating, the setting time for exposure is 5s, and adjusts mask plate
Position is developed after end exposure with 1~4%NaOH solution with forming required pattern, developing time 5-10s, with 0.5~
3% acid solution performs etching, and etch period is 5~15s, and etching temperature is 20~30 DEG C.
9. a kind of preparation method of MSM structures based on Mo/ZnON/Mo according to claim 5, it is characterised in that：Institute
The deposition method for stating Mo metal electrode layers is：Using DC magnetron sputtering method, using the molybdenum target of 99.99% purity as sputtering target
Material is passed through the pre-sputtering that argon gas carries out molybdenum target 2~10min before deposition, and using argon gas as sputter gas, the thin film sputtering time is 2
~10min, underlayer temperature are 20~30 DEG C.
10. a kind of preparation method of MSM structures based on Mo/ZnON/Mo according to claim 5, it is characterised in that：Institute
The lithographic method for stating Mo metal electrode layers is：Using photoetching is carried out after spin coating spin coating, the setting time for exposure is 5s, and adjusts mask
Version position is developed after end exposure with 1~4%NaOH solution with forming required pattern, developing time 10s, with 4~
15%H2O2Solution performs etching, and etch period is 10~25s, and etching temperature is 20~30 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810247940.9A CN108493235A (en) | 2018-03-23 | 2018-03-23 | A kind of MSM structures and preparation method thereof based on Mo/ZnON/Mo |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810247940.9A CN108493235A (en) | 2018-03-23 | 2018-03-23 | A kind of MSM structures and preparation method thereof based on Mo/ZnON/Mo |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108493235A true CN108493235A (en) | 2018-09-04 |
Family
ID=63319669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810247940.9A Pending CN108493235A (en) | 2018-03-23 | 2018-03-23 | A kind of MSM structures and preparation method thereof based on Mo/ZnON/Mo |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108493235A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444615A (en) * | 2019-08-12 | 2019-11-12 | 中南大学 | A kind of AlGaN base vertical junction MSM ultraviolet detector and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110147786A1 (en) * | 2008-04-08 | 2011-06-23 | Song June O | Light-emitting device and manufacturing method thereof |
| US20120140543A1 (en) * | 2010-12-02 | 2012-06-07 | Institute of Microelectronics, Chinese Academy of Sciences | One Time Programming Memory and Method of Storage and Manufacture of the Same |
-
2018
- 2018-03-23 CN CN201810247940.9A patent/CN108493235A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110147786A1 (en) * | 2008-04-08 | 2011-06-23 | Song June O | Light-emitting device and manufacturing method thereof |
| US20120140543A1 (en) * | 2010-12-02 | 2012-06-07 | Institute of Microelectronics, Chinese Academy of Sciences | One Time Programming Memory and Method of Storage and Manufacture of the Same |
Non-Patent Citations (3)
| Title |
|---|
| CHAN-YONG JEONG ET AL: ""Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors"", 《IEEE ELECTRON DEVICE LETTERS》 * |
| D. C. OH ET AL: ""Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy"", 《APPLIED PHYSICS LETTERS》 * |
| JUN TAE JANG ET AL: ""Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices"", 《SOLID STATE ELECTRONICS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444615A (en) * | 2019-08-12 | 2019-11-12 | 中南大学 | A kind of AlGaN base vertical junction MSM ultraviolet detector and preparation method thereof |
| CN110444615B (en) * | 2019-08-12 | 2021-04-23 | 中南大学 | AlGaN-based vertical junction MSM ultraviolet detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103325840B (en) | Thin film transistor (TFT) and preparation method thereof | |
| US9991135B2 (en) | Method for fabricating a metal oxide thin film transistor | |
| EP2787527B1 (en) | Method for treating a metal oxide semiconductor surface and method for preparing a thin film transistor | |
| CN102157565A (en) | Manufacturing method of thin-film transistor | |
| CN109449214B (en) | Gallium oxide semiconductor Schottky diode and manufacturing method thereof | |
| CN108122749B (en) | A kind of SiC base GaN_HEMT back process based on graphical slide glass | |
| CN104157720B (en) | A kind of silica-based avalanche photodetector of Graphene and preparation method of mixed structure | |
| CN108376712A (en) | A kind of transparent film transistor and preparation method based on cuprous iodide | |
| CN107516647A (en) | Array base palte and preparation method thereof, display device | |
| US9368602B2 (en) | Method for fabricating IGZO layer and TFT | |
| TW201043716A (en) | Ionized physical vapor deposition for microstructure controlled thin film deposition | |
| KR101760839B1 (en) | Method for depositing a thin film electrode and thin film stack | |
| CN108493235A (en) | A kind of MSM structures and preparation method thereof based on Mo/ZnON/Mo | |
| CN106252203B (en) | Crystallization method of metal oxide semiconductor layer and semiconductor structure | |
| CN109801875A (en) | Production method, array substrate and the display panel of array substrate | |
| US20190013412A1 (en) | Thin film transistor, manufacturing method thereof and display | |
| CN100573959C (en) | A kind of preparation method of OTFT of active layer graph | |
| JP2011171516A (en) | Method for reducing defect in semiconductor substrate and method for manufacturing thin-film transistor | |
| CN112635565A (en) | Two-dimensional semiconductor transistor structure with controllable performance and preparation method thereof | |
| CN105355663A (en) | Hydrogen passivation zinc oxide-based double-channel film transistor and preparation method for the same | |
| CN214012946U (en) | Two-dimensional semiconductor transistor structure | |
| CN106158614B (en) | The preparation method of semiconductor devices | |
| RU2730050C1 (en) | Photoconverter manufacturing method | |
| JP6173246B2 (en) | Thin film transistor and manufacturing method thereof | |
| EP4160697A1 (en) | Oxide thin film transistor and preparation method therefor, and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180904 |
|
| RJ01 | Rejection of invention patent application after publication |