CN100573959C - Preparation method of organic thin film transistor with patterned active layer - Google Patents
Preparation method of organic thin film transistor with patterned active layer Download PDFInfo
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- CN100573959C CN100573959C CNB2007101762816A CN200710176281A CN100573959C CN 100573959 C CN100573959 C CN 100573959C CN B2007101762816 A CNB2007101762816 A CN B2007101762816A CN 200710176281 A CN200710176281 A CN 200710176281A CN 100573959 C CN100573959 C CN 100573959C
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- 238000000034 method Methods 0.000 claims abstract description 49
- 239000010410 layer Substances 0.000 claims description 113
- 229920002120 photoresistant polymer Polymers 0.000 claims description 51
- 239000011241 protective layer Substances 0.000 claims description 38
- 238000005516 engineering process Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 230000006378 damage Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
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- 238000005459 micromachining Methods 0.000 abstract 1
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Abstract
The invention relates to the technical field of organic semiconductor devices and micromachining, and discloses a preparation method of an active layer patterned organic thin film transistor. The invention can be completely compatible with the traditional IC process, and the prepared active layer graphical organic thin film transistor has the characteristics of small off-state current and high current on-off ratio.
Description
Technical field
The present invention relates to organic semiconductor device and Micrometer-Nanometer Processing Technology field, relate in particular to a kind of preparation method of OTFT of active layer graph.
Background technology
Along with the organic electronic industrial expansion, OTFT shows great application potential at aspects such as flexible active matrix demonstration and flexible integrated circuits.Graphical active layer is the steps necessary that realizes that organic semiconductor is used.
In traditional microelectronics processing, the semiconductor layer of silicon thin film transistor is graphically generally adopted the method for photoetching, but this method can not directly apply to the graphical processing of organic semiconductor thin-film, destroys because various solution that adopted in the photoetching process and photoresist itself all can produce the organic film performance.
Jackson seminar develops a kind ofly does the method (Appl.Phys.Lett., 74,3302,1999) of negative glue and the graphical active layer of protective layer with polyvinyl alcohol (PVA), but rate of finished products is low.People (IBM, Adv.Mater., 15,2066,2003) such as Ali Afzali use the graphical active layer of solution method for processing, but after device passed through solvent, performance obviously descended.People such as Jin Jiang propose the graphical active layer of method with self-organizing, but repeatability is bad.People (Appl.Phys.Lett. such as Stijn De Vusser, 88,103501,2006) method (integrated shadow mask) of having expected doing with photoresist mask is come graphical active layer, but the photoresist in this method can't be removed, and makes follow-up manufacture craft be subjected to certain restriction.
Therefore, graphical organic semiconductor thin-film is a key technical problem that limits the further practical application of OTFT at present, be necessary to develop as early as possible a kind of under the condition of not damaging the organic film performance, the technology that can graphically process organic film.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of and traditional microelectronic processing technique preparation method of the organic semiconductor thin film transistor of compatible graphical active layer fully, to be implemented under the condition of not damaging the organic film performance, organic film is graphically processed.
(2) technical scheme
For achieving the above object; the invention provides a kind of preparation method of OTFT of active layer graph; this method adopts photoresist as mask after the metal source and drain electrodes preparation finishes; this mask covers the source; the upper surface of drain electrode and the source of removing; insulated gate layer upper surface beyond between the drain electrode; earlier prepare the organic semiconductor thin-film layer then with vacuum vapour deposition; on this organic semiconductor thin-film layer, adopt room temperature PECVD legal system to be equipped with layer protective layer again; and making this organic semiconductor thin-film layer and the thickness of this protective layer thickness sum less than described metal source and drain electrodes, the liquid of guaranteeing to remove photoresist does not contact with this organic semiconductor thin-film layer when removing the photoresist mask and causes the destruction of this organic semiconductor thin-film layer character.
The preparation method of the OTFT of this active layer graph provided by the invention specifically may further comprise the steps:
On conductive substrates 1, form insulated gate layer 2;
On insulated gate layer 2, form source electrode 3 and drain electrode 4;
On source electrode 3, drain electrode 4 and insulated gate layer 2, form photoresist mask 5;
Form organic semiconductor film layer, this organic semiconductor thin-film layer is made of the first organic semiconductor thin-film layer 6 that forms respectively on insulated gate layer 2 between source, the drain electrode and photoresist mask 5 and the second organic semiconductor thin-film layer 7;
Form protective layer, this protective layer is made of first protective layer 8 that forms respectively on the first organic semiconductor thin-film layer 6 and the second organic semiconductor thin-film layer 7 and second protective layer 9;
Stripping photoresist mask 5, the second organic semiconductor thin-film layer 7 and second protective layer 9 on it in photoresist solvent form the patterned first organic semiconductor thin-film layer 6 with first protective layer 8, and this photoresist solvent is the described liquid that removes photoresist.
In the such scheme, described conductive substrates 1 is used for the grid as OTFT.
In the such scheme, described formation insulated gate layer 2 is undertaken by the method for thermal oxide growth, chemical vapour deposition (CVD) or spin coating.
In the such scheme, described formation source electrode 3 and drain electrode 4 adopt evaporation of metal or magnetron sputtering technique to carry out.
In the such scheme, the described formation first organic semiconductor thin-film layer 6 and the second organic semiconductor thin-film layer 7 adopt the vacuum thermal evaporation technology to carry out, to form the orderly continuously uniform organic semiconductor thin-film of big crystal grain.
In the such scheme, described formation first protective layer 8 and second protective layer 9 adopt room temperature PECVD method to carry out, with the good protective film of acquisition compactness, and the damage of avoiding high-temperature technology that organic semiconductor thin-film is caused.
In the such scheme, when described stripping photoresist mask 5, the second organic semiconductor thin-film layer 7 and second protective layer 9 on it, adopt lift-off technology stripping photoresist mask 5, to obtain the patterned first organic semiconductor thin-film layer 6.
In the such scheme, described organic semiconductor thin-film layer and protective layer thickness sum be less than the thickness of described metal source and drain electrodes, and the used solution that removes photoresist destroys when guaranteeing that the first organic semiconductor thin-film layer character can be by photoresist and stripping photoresist.
(3) beneficial effect
As can be seen, the present invention has following technique effect from technique scheme:
1, the preparation method of the OTFT of this active layer graph provided by the invention, be and the complete preparation method of the organic semiconductor thin film transistor of compatible graphical active layer of traditional microelectronic processing technique, realized under the condition of not damaging the organic film performance, organic film graphically being processed.
2; the preparation method of the OTFT of this active layer graph provided by the invention; after finishing, the metal source and drain electrodes preparation adopt photoresist as mask; earlier prepare the organic semiconductor thin-film layer with vacuum vapour deposition; adopt room temperature PECVD legal system to be equipped with layer protective layer more thereon; and make organic layer and protective layer thickness sum thickness less than metal electrode; the liquid of having guaranteed to remove photoresist can not contact with organic layer when removing the photoresist mask and cause the destruction of organic semiconductor thin layer character, finally finishes the method for the OTFT of active layer graph.
3, the preparation method of the OTFT of this active layer graph provided by the invention, it is the method for the OTFT of the graphical active layer of the simple preparation of a kind of technology, the method and traditional microelectronic processing technology are compatible fully, without any additional, special process.
4, the preparation method of the OTFT of this active layer graph provided by the invention, with the process conditions of traditional microelectronic processing technology compatibility under can obtain the fine pattern active layer, finish the OTFT preparation of devices.In the integrated circuit of being made up of the OTFT of the graphical active layer that adopts this method to obtain, it is little that this OTFT has an off-state current, the character that current on/off ratio is high.
Description of drawings
Fig. 1 is the method flow diagram of the OTFT of preparation active layer graph provided by the invention;
Fig. 2 is the process chart corresponding with step among Fig. 1;
Fig. 3 is for preparing the method flow diagram of the OTFT of active layer graph according to the embodiment of the invention;
Fig. 4 is the structural representation according to the OTFT of the active layer graph of embodiment of the invention preparation.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Core content of the present invention is: adopt photoresist as mask after the metal source and drain electrodes preparation finishes; earlier prepare the organic semiconductor thin-film layer with vacuum vapour deposition; on this organic semiconductor thin-film layer, adopt room temperature PECVD legal system to be equipped with layer protective layer again; and making this organic semiconductor thin-film layer and the thickness of this protective layer thickness sum less than described metal source and drain electrodes, the liquid of guaranteeing to remove photoresist does not contact with this organic semiconductor thin-film layer when removing the photoresist mask and causes the destruction of this organic semiconductor thin-film layer character.
As shown in Figure 1, Fig. 1 is the method flow diagram of the OTFT of preparation active layer graph provided by the invention, and this method may further comprise the steps:
Step 101: on conductive substrates 1, form insulated gate layer 2;
The technological process corresponding with this step is shown in Fig. 2-1, and in this step, described conductive substrates 1 is the electric conducting material of low-resistivity, is used for the grid as OTFT; Described formation insulated gate layer 2 is undertaken by the method for thermal oxide growth, chemical vapour deposition (CVD) or spin coating.
Step 102: on insulated gate layer 2, form source electrode 3 and drain electrode 4;
The technological process corresponding with this step is shown in Fig. 2-2, and described formation source electrode 3 and drain electrode 4 adopt evaporation of metal or magnetron sputtering technique to carry out.
Step 103: on source electrode 3, drain electrode 4 and insulated gate layer 2, form photoresist mask 5;
The technological process corresponding with this step is shown in Fig. 2-3, and in this step, the spin coating photoresist behind the exposure imaging, forms photoresist mask figure.
Step 104: on insulated gate layer 2 and photoresist mask 5, form the first organic semiconductor thin-film layer 6 and the second organic semiconductor thin-film layer 7;
The technological process corresponding with this step is shown in Fig. 2-4, in this step, the described formation first organic semiconductor thin-film layer 6 and the second organic semiconductor thin-film layer 7 adopt the vacuum thermal evaporation technology to carry out, to form the orderly continuously uniform organic semiconductor thin-film of big crystal grain.
Step 105: on the first organic semiconductor thin-film layer 6 and the second organic semiconductor thin-film layer 7, form first protective layer 8 and second protective layer 9;
The technological process corresponding with this step is shown in Fig. 2-5; in this step; described formation first protective layer 8 and second protective layer 9 adopt room temperature PECVD method to carry out, with the good protective film of acquisition compactness, and the damage of avoiding high-temperature technology that organic semiconductor thin-film is caused.
Step 106: second protective layer 9 in photoresist solvent on the organic semiconductor 7 of stripping photoresist mask 5, non-active area and the organic semiconductor 7 forms the first organic semiconductor thin-film layer 6 of patterned band protective layer;
The technological process corresponding with this step is shown in Fig. 2-6, in this step, when the organic semiconductor 7 of described stripping photoresist mask 5, non-active area and second protective layer 9 on the organic semiconductor 7, adopt lift-off technology stripping photoresist mask 5, to obtain patterned organic semiconductor thin-film layer 6; Described organic semiconductor thin-film layer and protective layer thickness sum be less than the thickness of described metal source and drain electrodes, with the organic semiconductor thin-film character of guaranteeing active area can be the time by photoresist and stripping photoresist the used solution that removes photoresist destroy.
Further specify specific implementation method of the present invention and step below, as shown in Figure 3, Fig. 3 is for preparing the method flow diagram of the OTFT of active layer graph according to the embodiment of the invention.
1, shown in Fig. 3-1, on heavy doping p type silicon conductive substrates, adopt spin coating technique to prepare the gate medium insulating thin layer of the thick polyimides of 500nm.
2, shown in Fig. 3-2, adopt the thick gold of electron beam metal vaporizing technique deposition 80nm as source-drain electrode.
3, shown in Fig. 3-3, spin coating 9918 positive photoresist 1400nm behind the exposure imaging, form photoresist mask figure.
4, as shown in Figure 3-4, adopt vacuum thermal evaporation technology evaporation CuPc organic semiconductor thin-film 40nm.
5, shown in Fig. 3-5, adopt room temperature PECVD method, growth 20nm thin layer of silicon oxide is as protective layer.Meet the demands: 40nm+20nm＜80nm.
6, shown in Fig. 3-6, adopt the method for peeling off, remove photoresist 9918 with acetone, finish the preparation of the organic semiconductor thin film transistor of active layer graph.
As shown in Figure 4, Fig. 4 is the structural representation according to the OTFT of the active layer graph of embodiment of the invention preparation.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1; a kind of preparation method of OTFT of active layer graph; it is characterized in that; this method adopts photoresist as mask after the metal source and drain electrodes preparation finishes; this mask covers the source; the upper surface of drain electrode and the source of removing; insulated gate layer upper surface beyond between the drain electrode; earlier prepare the organic semiconductor thin-film layer then with vacuum vapour deposition; on this organic semiconductor thin-film layer, adopt room temperature PECVD legal system to be equipped with layer protective layer again; and making this organic semiconductor thin-film layer and the thickness of this protective layer thickness sum less than described metal source and drain electrodes, the liquid of guaranteeing to remove photoresist does not contact with this organic semiconductor thin-film layer when removing the photoresist mask and causes the destruction of this organic semiconductor thin-film layer character.
2, the preparation method of the OTFT of active layer graph according to claim 1 is characterized in that, this method may further comprise the steps:
Go up formation insulated gate layer (2) in conductive substrates (1);
Go up formation source electrode (3) and drain electrode (4) at insulated gate layer (2);
Go up formation photoresist mask (5) at source electrode (3), drain electrode (4) and insulated gate layer (2);
Form organic semiconductor film layer, this organic semiconductor thin-film layer is made of the first organic semiconductor thin-film layer (6) that forms respectively on insulated gate layer (2) between source, the drain electrode and photoresist mask (5) and the second organic semiconductor thin-film layer (7);
Form protective layer, this protective layer is made of first protective layer (8) that forms respectively on the first organic semiconductor thin-film layer (6) and the second organic semiconductor thin-film layer (7) and second protective layer (9);
Stripping photoresist mask (5), the second organic semiconductor thin-film layer (7) and second protective layer (9) on it in photoresist solvent; form the patterned first organic semiconductor thin-film layer (6) with first protective layer (8), this photoresist solvent is the described liquid that removes photoresist.
3, the preparation method of the OTFT of active layer graph according to claim 2 is characterized in that, described conductive substrates (1) is used for the grid as OTFT.
4, the preparation method of the OTFT of active layer graph according to claim 2 is characterized in that, described formation insulated gate layer (2) is undertaken by the method for thermal oxide growth, chemical vapour deposition (CVD) or spin coating.
5, the preparation method of the OTFT of active layer graph according to claim 2 is characterized in that, described formation source electrode (3) and drain electrode (4) adopt evaporation of metal or magnetron sputtering technique to carry out.
6, the preparation method of the OTFT of active layer graph according to claim 2, it is characterized in that, the described formation first organic semiconductor thin-film layer (6) and the second organic semiconductor thin-film layer (7) adopt the vacuum thermal evaporation technology to carry out, to form the orderly continuously uniform organic semiconductor thin-film of big crystal grain.
7, the preparation method of the OTFT of active layer graph according to claim 2; it is characterized in that; described formation first protective layer (8) and second protective layer (9) adopt room temperature PECVD method to carry out; with the good protective film of acquisition compactness, and the damage of avoiding high-temperature technology that organic semiconductor thin-film is caused.
8, the preparation method of the OTFT of active layer graph according to claim 2; it is characterized in that; when described stripping photoresist mask (5), the second organic semiconductor thin-film layer (7) and second protective layer (9) on it; adopt lift-off technology stripping photoresist mask (5), to obtain the patterned first organic semiconductor thin-film layer (6).
9, the preparation method of the OTFT of active layer graph according to claim 8; it is characterized in that; described organic semiconductor thin-film layer and protective layer thickness sum be less than the thickness of described metal source and drain electrodes, and the used solution that removes photoresist destroys when guaranteeing that the first organic semiconductor thin-film layer character can be by photoresist and stripping photoresist.
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| CN109768161B (en) * | 2019-01-08 | 2020-06-16 | 华东师范大学 | Method for patterning active layer of organic thin film transistor |
| CN112420927B (en) * | 2020-11-25 | 2022-09-23 | 昆山工研院新型平板显示技术中心有限公司 | Preparation method of organic thin film transistor device and display panel |
| CN114334617B (en) * | 2022-01-11 | 2022-09-09 | 南京邮电大学 | Method for photoetching patterning of organic layer on substrate |
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| US20050056897A1 (en) * | 2003-09-12 | 2005-03-17 | Masahiro Kawasaki | Semiconductor device and manufacturing method thereof |
| CN1670598A (en) * | 2005-04-08 | 2005-09-21 | 中国科学院长春应用化学研究所 | Process for preparing active matrix LCD arrangement with pattern active layers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20050056897A1 (en) * | 2003-09-12 | 2005-03-17 | Masahiro Kawasaki | Semiconductor device and manufacturing method thereof |
| CN1670598A (en) * | 2005-04-08 | 2005-09-21 | 中国科学院长春应用化学研究所 | Process for preparing active matrix LCD arrangement with pattern active layers |
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