CN100386886C - Process for preparing active matrix LCD arrangement with pattern active layers - Google Patents
Process for preparing active matrix LCD arrangement with pattern active layers Download PDFInfo
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- CN100386886C CN100386886C CNB2005100166953A CN200510016695A CN100386886C CN 100386886 C CN100386886 C CN 100386886C CN B2005100166953 A CNB2005100166953 A CN B2005100166953A CN 200510016695 A CN200510016695 A CN 200510016695A CN 100386886 C CN100386886 C CN 100386886C
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 16
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
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- 229930192474 thiophene Natural products 0.000 claims description 10
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
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- -1 fluoro CuPc Chemical compound 0.000 claims description 6
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 125000001153 fluoro group Chemical group F* 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
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Abstract
The present invention discloses a making method for a patterned active layer organic thin film transistor and a preparation method for an active matrix liquid crystal display device. The present invention patterns active layers by a lift-off technique so as to reduce the damage to the active layers in the process of photoengraving. The organic film transistor made by the present invention has high field effect mobility, and high current ratio property in a switch state. The making method for a patterned active layer organic thin film transistor can be further applied to logic circuits, organic thin film solar cells, organic sensors, etc.
Description
Technical field
The present invention relates to the preparation method of the OTFT of patterning active layer.
The invention still further relates to the preparation method of the active matrix liquid crystal display apparatus of the OTFT that adopts the patterning active layer.
Background technology
In recent years, OTFT shows application potential at aspects such as flexible active matrix demonstration and flexible integrated circuits.The patterning active layer is that the realization organic semiconductor is used needed step.Jackson seminar (The Pennsylvania State University) develops a kind of method (D.J.Grndlach that makes negative glue and protective layer patterning active layer with polyvinyl alcohol (PVA); T.N.Jackson.Appl.Phys.Lett.; 74; 3302; 1999), but rate of finished products is low.People such as AliAfzali (IBM, Adv.Mater, 15,2066,2003) use solution method for processing patterning active layer, but after device passed through solvent, performance obviously descended.Recently, people such as Jin Jiang propose the method patterning active layer with self-organizing, and repeatability is bad, at present can't practical application.Therefore, the patterning organic semiconductor thin-film is a key technical problem that limits the further practical application of OTFT at present.
Summary of the invention
The preparation method who the purpose of this invention is to provide the OTFT of patterning active layer;
Another object of the present invention provides the preparation method of the active matrix liquid crystal display apparatus of the OTFT that adopts the patterning active layer.
Method of the present invention is to utilize general photoresist to be mask plate, adopt lift-off technology, in photoresist solvent, diluent or stripper, remove the organic semiconductor of photoresist mask plate and non-graph area, thereby realize patterning to active semiconductor layer, under simple process conditions, just can the fine patterning active layer, make up organic film transistor device, adopt OTFT active matrix liquid crystal display apparatus of the present invention to have low off-state current and no cross-talk character.
Auspicious red company buys photoresist RZJ-390 series (ZPP1700), RZJ-395 (ZPP1850), RZJ-304, RZJ-306 (ZPP3600), RZJ-301PG, SRF-900 or the RFJ-220 that the present invention adopts from Suzhou, and photoresist BP213 buys from Gao Heng company of Beijing Inst. of Chemical Reagent.The photoresist solvent that adopts can be water, (the wash liquid for negative resist RFH-2200 (ZG-50) or the RFP2202 of 0.4～10w.t.%) NaOH solution, alcohol, acetone, 1-Methoxy-2-propyl acetate (PEGMA), glycol methyl ether acetate (ECA), dimethylbenzene, the auspicious red company purchase from Suzhou, diluent can be positive glue diluent RZR-3000 or RZR-3100, and stripper can be positive glue stripper RBL-3368, negative glue stripper RBL-2304 or RBL-2502 auspicious red company purchase from Suzhou.Active semiconductor layer is to constitute by one or more blend, eutectic or the stratiform in the CuPc of high-sequential, Phthalocyanine Zinc, phthalocyanine nickel, fluoro CuPc, fluoro phthalocyanine chromium, pentacene, five thiophene or six thiophene is compound.
The preparation method of the OTFT of patterning active layer of the present invention and the preparation method of active matrix liquid crystal display apparatus are described below in conjunction with the accompanying drawings:
In the accompanying drawing 1
1a peels off the schematic cross-section of the hearth electrode OTFT before the active layer;
1b is corresponding with 1a peels off the schematic cross-section of the hearth electrode OTFT behind the active layer;
In the accompanying drawing 2
2a peels off the schematic cross-section of the top electrode OTFT before the active layer;
2b is corresponding with 2a peels off the schematic cross-section of the top electrode OTFT behind the active layer;
Accompanying drawing 3 is peeled off the optics picture of active layer OTFT;
The structural profile schematic diagram of accompanying drawing 4 transmission-type active matrix liquid crystal display unit pixels;
The structural profile schematic diagram of accompanying drawing 5 reflecting active matrix liquid crystal display pixels;
The structural profile schematic diagram of accompanying drawing 6 transflective active matrix liquid crystal display unit pixels;
In the accompanying drawing 7
7a is according to the transfer characteristic curve of top electrode OTFT of the present invention;
7b is according to the output characteristic curve of top electrode OTFT of the present invention;
In the accompanying drawing 8
8a is according to the transfer characteristic curve of hearth electrode OTFT of the present invention;
8b is according to the output characteristic curve of hearth electrode OTFT of the present invention;
Among the figure
(1)-and substrate, (2)-grid, (3)-gate insulation layer; (4)-and source electrode, (5)-drain electrode, (6)-organic semiconductor layer; (7)-and photoresist, the organic semiconductor of (8)-non-graph area, (9)-substrate; (10)-and grid, (11)-gate insulation layer, (12)-organic semiconductor layer; (13)-and photoresist, the organic semiconductor of (14)-non-graph area, (15)-source electrode; (16)-and drain electrode, (17)-substrate, (18)-grid; (19)-and gate insulation layer, (20)-source electrode, (21)-drain electrode; (22)-and organic semiconductor layer, (23)-protective layer, (24)-liquid crystal; (25)-and envelope box glue, (26)-oriented layer, (27)-polarizer; (28)-to electrode base board; (29)-and transparency electrode, (30)-transparent pixels electrode, (31)-pixel storage capacitor; (32)-the liquid crystal cell chock insulator matter; (33)-and substrate, (34)-grid, (35)-gate insulation layer; (36)-source electrode; (37)-and drain electrode, (38)-organic semiconductor layer, (39)-protective layer; (40)-liquid crystal; (41)-and envelope box glue, (42)-polarizer, (43)-to electrode base board; (44)-reflecting electrode; (45)-and to electrode, (46)-liquid crystal cell chock insulator matter, (47)-substrate; (48)-grid; (49)-and gate insulation layer, (50)-source electrode, (51)-drain electrode; (52)-organic semiconductor layer; (53)-and protective layer, (54)-liquid crystal, (55)-envelope box glue; (46)-polarizer; (57)-and to electrode base board, (58)-transparency electrode, (59)-to electrode; (60)-and reflecting electrode, (61)-liquid crystal cell chock insulator matter.
It is as follows to adopt the present invention to prepare end contact configuration OTFT method, and the thickness of wherein each kind of film and the condition of preparation also are applicable to the OTFT of back and the preparation method of active matrix display devices:
The first step, one or more among sputter or evaporation one deck 150～400nm are thick on substrate (1) metal Ta, Ti, Cr, W or the Mo, and be photo-etched into gate electrode (2), the condition of sputter is: base vacuum 1 * 10
-2More than the Pa; Feed argon gas, sputter vacuum 0.8～10Pa; Radio-frequency power 300～700W; Underlayer temperature is 80～120 ℃.The condition of evaporation is: base vacuum 1 * 10
-3More than a;
Second step, the gate insulating film (3) of the high dielectric property matter of sputter or evaporation one deck 150～500nm, dielectric film is by SiO
2, Ta
2O
5, Al
2O
3, TiO
2Or one or more formations among the BZT, the condition of sputter is: base vacuum 1 * 10
-2More than the Pa; One or both of feeding argon gas or oxygen, the sputter vacuum is 0.8～10Pa; Direct current power 300～700W; 80～120 ℃ of degree of underlayer temperature, the condition of evaporation is: base vacuum 1 * 10
-4More than the Pa;
The 3rd step, vacuum thermal evaporation one deck 30～500nm metal A u, Ag, Mo or Al, and be photo-etched into source/drain electrode (4) and (5), the condition of evaporation is: base vacuum 1 * 10
-3More than a;
In the 4th step, behind the photoresist more than the 700nm, exposure is developed, and forms photoresist mask plate (7) at coating one layer thickness on the substrate;
In the 5th step, the organic semiconducting materials of vacuum thermal evaporation one deck 10～200nm is as active layer (6) and (8), and the condition of evaporation is: base vacuum 1 * 10
-4More than a, 20～200 ℃ of underlayer temperatures, the quartz boat temperature of containing semiconductor powder is more than 300 ℃;
In the 6th step, the organic semiconductor (8) of stripping photoresist mask plate (7) and non-graph area in the solvent of photoresist is realized the patterning to organic semiconductor layer;
In the 7th step, under vacuum condition or nitrogen atmosphere, anneal annealing conditions: base vacuum 1 * 10
-3More than, 90～160 ℃ of underlayer temperatures, the time is more than 2 hours.
It is as follows to adopt the present invention to prepare top contact configuration OTFT method:
The first step, one or more among sputter or evaporation one deck 100～400nm are thick on substrate (9) metal Ta, Ti, Cr, W or the Mo, and be photo-etched into gate electrode (10);
Second step, the gate insulating film (11) of the high dielectric property matter of sputter or evaporation one deck 150～500nm, dielectric film is by SiO
2, Ta
2O
5, Al
2O
3, TiO
2Or one or more formations among the BZT;
In the 3rd step, behind the above photoresist of 700nm, exposure is developed, and forms photoresist mask plate (13) at coating one layer thickness on the substrate;
In the 4th step, the organic semiconducting materials of vacuum thermal evaporation one deck 10～200nm is as active layer (12) and (14);
In the 5th step, the organic semiconductor (14) of stripping photoresist mask plate (13) and non-graph area in the solvent of photoresist is realized the patterning to organic semiconductor layer;
The 6th step, vacuum thermal evaporation one deck 30～500nm metal A u, Ag, Mo or Al, and be photo-etched into source/drain electrode (15) and (16);
In the 7th step, under vacuum condition or nitrogen atmosphere, anneal;
The method that employing the present invention prepares the transmission-type active matrix liquid crystal display apparatus is as follows:
The first step, one or more of metal Ta, Ti, Cr, W or the Mo that sputter or evaporation one deck 100～400mn are thick on substrate (17), and be photo-etched into gate electrode (18) and pixel storage capacitor (31);
Second step, the gate insulating film (19) of the high dielectric property matter that sputter or evaporation one deck 150～500nm are thick, dielectric film is by SiO
2, Ta
2O
5, Al
2O
3, TiO
2Or one or more formations among the BZT;
The 3rd step, the transparent pixels electrode ITO of sputter evaporation one deck 30～200nm or Au and photoetching moulding (30);
In the 4th step, behind the photoresist more than the 700nm, exposure is developed, and forms the photoresist mask at coating one layer thickness on the substrate;
In the 5th step, the vacuum thermal evaporation organic semiconducting materials is as active layer;
The 6th step, the organic semiconductor thin-film of stripping photoresist mask and non-graph area in photoresist solvent, form patterning organic semiconductor layer (22);
The 7th step, the metal A u that vacuum thermal evaporation one deck 30～500nm is thick, Ag, Mo or Al, and be photo-etched into source/drain electrode (20) and (21);
In the 8th step, under vacuum condition or nitrogen atmosphere, anneal;
In the 9th step, the PVA of spin coating one deck 150～500nm is as the diaphragm liquid crystal molecular orientation layer (23) of holding concurrently;
The tenth step was liquid crystal cell envelope box technology then.The upper substrate (28) that has transparency electrode (29) and oriented layer (26) is carried out friction treatment with matrix base plate (17); Spray liquid crystal cell chock insulator matter (32) and envelope box glue (25); Press box; Perfusion liquid crystal layer (24); Point sealing mouth; Stick down polarizer (27).
The method that employing the present invention prepares the reflecting active matrix liquid crystal indicator is as follows:
The first step goes up one or more of sputter or evaporation layer of metal Ta, Ti, Cr, W or Mo at substrate (33), and is photo-etched into gate electrode (34);
Second step, the gate insulating film (35) of sputter or evaporation one deck high dielectric property matter, dielectric film is by SiO
2, Ta
2O
5, Al
2O
3, TiO
2Or one or more formations among the BZT;
In the 3rd step, on insulated gate, form the metal A l of 30～300nm or the reflecting electrode of Ag (44);
In the 4th step, behind coating one deck photoresist on the substrate, exposure is developed, and forms the photoresist mask;
In the 5th step, the vacuum thermal evaporation organic semiconducting materials is as active layer;
The 6th step, the organic semiconductor of stripping photoresist mask and non-graph area in photoresist solvent, form patterning organic semiconductor layer (38);
The 7th step, vacuum thermal evaporation layer of metal Au, Ag, Mo or Al, and be photo-etched into source/drain electrode (36) and (37);
In the 8th step, under vacuum condition or nitrogen atmosphere, anneal;
In the 9th step, the PVA of spin coating one deck 150～500nm is as the diaphragm liquid crystal molecular orientation layer (39) of holding concurrently;
The tenth step was liquid crystal cell envelope box technology then.To having electrode (45) upper substrate (43) is carried out friction treatment with matrix base plate (33); Spray liquid crystal cell chock insulator matter (46) and envelope box glue (41); Press box; Perfusion liquid crystal layer (40); Point sealing mouth; Stick polarizer (42).
The method that employing the present invention prepares the Transflective active matrix liquid crystal display apparatus is as follows:
The first step goes up one or more of sputter or evaporation layer of metal Ta, Ti, Cr, W or Mo at substrate (47), and is photo-etched into gate electrode (48);
Second step, the gate insulating film (49) of sputter or evaporation one deck high dielectric property matter, dielectric film is by SiO
2, Ta
2O
5, Al
2O
3, TiO
2Or one or more formations among the BZT;
The 3rd step, transparent pixels electrode ITO or the Au of sputter evaporation 30～200nm, and photoetching moulding (58);
In the 4th step, behind coating one deck photoresist on the substrate, exposure is developed, and forms the photoresist mask;
In the 5th step, the vacuum thermal evaporation organic semiconducting materials is as active layer;
The 6th step, the organic semiconductor of stripping photoresist mask and non-graph area in photoresist solvent, form patterning organic semiconductor layer (52);
The 7th step, vacuum thermal evaporation layer of metal Au, Ag, Mo or Al, and be photo-etched into source/drain electrode (50) and (51);
In the 8th step, under vacuum condition or nitrogen atmosphere, anneal;
In the 9th step, the thick PVA of spin coating one deck 150～500nm is as the diaphragm liquid crystal molecular orientation layer (53) of holding concurrently;
The tenth step, metal A l or the Ag of deposition one deck 30～300nm on PVA, and be photo-etched into reflecting electrode shape (60).
The 11 step was liquid crystal cell envelope box technology then.To having electrode (59) upper substrate (57) is carried out friction treatment with matrix base plate (47); Spray liquid crystal cell chock insulator matter (61) and envelope box glue (55); Press box; Perfusion liquid crystal layer (54); Point sealing mouth; Stick down polarizer (56).
Description of drawings
Embodiment
Upward plate one deck Ta metal film and be photo-etched into gate electrode (2) in 7059 glass substrate (1) with radio frequency magnetron sputtering method.The condition of sputter is: base vacuum 2 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 1Pa; Radio-frequency power 500W; Underlayer temperature is 100 ℃.Then, the SiO that on grid, prepares one deck 300 nanometers continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (3).The condition of reactive sputtering is: base vacuum 2 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 1Pa; Direct current power 500W; 100 ℃ of degree of underlayer temperature.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-5Behind the gold (Au) of thermal evaporation one deck 100 nanometers, put into gold formation source electrode (4) and drain electrode (5) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Channel width is 1000 microns, and channel length is 100 microns.Then, coating one deck photoresist, exposure, the photoresist mask (7) of the preparation active layer that develops.10
-5Heating fills the quartz boat of CuPc powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor active layer (6) and (8) that form about 30 nanometers of thickness on the room temperature substrate, and generalized section is seen accompanying drawing 1a.At last, peel off the active layer film (8) of non-graph area in the acetone solvent.Then, device was annealed 3 hours under vacuum.See accompanying drawing 1b at the device profile schematic diagram.Device property sees Table 1.
Upward plate one deck Ta metal film and be photo-etched into gate electrode (10) in 7059 glass substrate (9) with radio frequency magnetron sputtering method.The condition of sputter is: base vacuum 2 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 1Pa; Radio-frequency power 500W; Underlayer temperature is 100 ℃.Then, the SiO that on grid, prepares one deck 300 nanometers continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (11).The condition of reactive sputtering is: base vacuum 2 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 1Pa; Direct current power 500W; 100 ℃ of degree of underlayer temperature.Then, deposition one deck photoresist, exposure is developed, the photoresist mask (13) of preparation active layer.10
-5Heating fills the quartz boat of CuPc powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor active layer (12) and (14) that form about 30 nanometers of thickness on the room temperature substrate.At last, peel off the active layer film (14) of non-graph area in the acetone solvent.Generalized section is seen accompanying drawing 2a.Then, device was annealed 3 hours under nitrogen atmosphere.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-5Behind the gold (Au) of thermal evaporation one deck 100 nanometers, put into gold formation source electrode (15) and drain electrode (16) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Channel width is 1000 microns, and channel length is 100 microns.See accompanying drawing 2b at the device profile schematic diagram.Device property sees Table 1.
Upward plate one deck Ta metal film and be photo-etched into gate electrode (2) in 7059 glass substrate (1) with radio frequency magnetron sputtering method.The condition of sputter is: base vacuum 2 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 1Pa; Radio-frequency power 500W; Underlayer temperature is 100 ℃.Then, the SiO that on grid, prepares one deck 300 nanometers continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (3).The condition of reactive sputtering is: base vacuum 2 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 0.9Pa; Direct current power 500W; 100 ℃ of degree of underlayer temperature.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-5Behind the gold (Au) of thermal evaporation one deck 100 nanometers, put into gold formation source electrode (4) and drain electrode (5) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Channel width is 1000 microns, and channel length is 100 microns.Then, deposition one deck photoresist, exposure, the photoresist mask (7) of the preparation active layer that develops.10
-5Heating fills the quartz boat of pentacene powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor active layer (6) and (8) that form about 30 nanometers of thickness on the room temperature substrate, and generalized section is seen accompanying drawing 1a.At last, peel off the active layer film (8) of non-graph area in the acetone solvent.Then, device was annealed 3 hours under vacuum.See accompanying drawing 1b at the device profile schematic diagram.Device property sees Table 1.
Upward plate one deck Ta metal film and be photo-etched into gate electrode (10) in 7059 glass substrate (9) with radio frequency magnetron sputtering method.The condition of sputter is: base vacuum 2 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 1Pa; Radio-frequency power 500W; Underlayer temperature is 100 ℃.Then, the SiO that on grid, prepares one deck 300 nanometers continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (11).The condition of reactive sputtering is: base vacuum 2 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 0.9Pa; Direct current power 500W; 100 ℃ of degree of underlayer temperature.Then, deposition one deck photoresist, exposure, the photoresist mask (13) of the preparation active layer that develops.10
-5Heating fills the quartz boat of pentacene powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor active layer (12) and (14) that form about 30 nanometers of thickness on the room temperature substrate.Generalized section is seen accompanying drawing 2a.At last, peel off the active layer film (14) of non-graph area in the acetone solvent.Device was annealed 3 hours under vacuum.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-5Behind the gold (Au) of thermal evaporation one deck 100 nanometers, put into gold formation source electrode (15) and drain electrode (16) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Channel width is 1000 microns, and channel length is 100 microns.See accompanying drawing 2b at the device profile schematic diagram.Device property sees Table 1.
Upward plate one deck Ta metal film and be photo-etched into gate electrode (2) in 7059 glass substrate (1) with radio frequency magnetron sputtering method.The condition of sputter is: base vacuum 2 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 1Pa; Radio-frequency power 500W; Underlayer temperature is 100 ℃.Then, the SiO that on grid, prepares one deck 300 nanometers continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (3).The condition of reactive sputtering is: base vacuum 2 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 0.9Pa; Direct current power 500W; 100 ℃ of degree of underlayer temperature.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-5Behind the gold (Au) of thermal evaporation one deck 100 nanometers, put into gold formation source electrode (4) and drain electrode (5) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Channel width is 1000 microns, and channel length is 100 microns.Then, deposition one deck photoresist, exposure, the photoresist mask (7) of the preparation active layer that develops.10
-5Heating fills the quartz boat of fluoro CuPc powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor active layer (6) and (8) that form about 30 nanometers of thickness on the room temperature substrate.Generalized section is seen accompanying drawing 1a.At last, peel off the active layer film (8) of non-graph area in the acetone solvent.Then, device was annealed 3 hours under vacuum.See accompanying drawing 1b at the device profile schematic diagram.Device property sees Table 1.
Upward plate one deck Ta metal film and be photo-etched into gate electrode (2) in 7059 glass substrate (1) with radio frequency magnetron sputtering method.The condition of sputter is: base vacuum 2 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 1Pa; Radio-frequency power 500W; Underlayer temperature is 100 ℃.Then, the SiO that on grid, prepares one deck 300 nanometers continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (3).The condition of reactive sputtering is: base vacuum 2 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 0.8Pa; Direct current power 500W; 100 ℃ of degree of underlayer temperature.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-5Behind the aluminium (Al) of thermal evaporation one deck 100 nanometers, put into Al formation source electrode (5) and drain electrode (6) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Channel width is 1000 microns, and channel length is 100 microns.Then, deposition one deck photoresist, exposure is developed, the mask of preparation active layer.10
-5Heating fills the quartz boat of CuPc and Phthalocyanine Zinc powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor eutectic active layer (6) and (8) that form about 30 nanometers of thickness on the room temperature substrate, and generalized section is seen accompanying drawing 1a.At last, peel off the active layer film (8) of non-graph area in the acetone solvent.Then, device was annealed 3 hours under vacuum.See accompanying drawing 1b at the device profile schematic diagram.
Embodiment 7
The processing method of transmission-type OTFT-LCD device
At first be OTFT matrix technology.Upward plate one deck Ta metal film and be photo-etched into holding wire and gate shapes (18) and pixel storage capacitor (31) in 7059 glass substrate (17) with radio frequency magnetron sputtering method.Wherein etching metal Ta adopts reactive ion etching (RIE) dry technique.The condition of sputter is: base vacuum 4 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 0.8Pa; Radio-frequency power 400W; Underlayer temperature is 110 ℃.Then, at grid with prepare the SiO of one deck 150 nanometers above the substrate continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (19).The condition of reactive sputtering is: base vacuum 1 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 1Pa; Direct current power 400W; 90 ℃ of degree of underlayer temperature.With the continuous sputter layer of transparent of dc magnetron sputtering method conducting film (TTO), thickness is 100nm again, and is photo-etched into pixel electrode shape (30).Then, deposition one deck photoresist, exposure is developed, the mask of preparation active layer.10
-5Heating fills the quartz boat of CuPc powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor active layer (22) that forms about 100 nanometers of thickness on the room temperature substrate.In acetone solvent, peel off the active layer film of non-graph area again.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-4Behind the gold (Au) of thermal evaporation one deck 50 nanometers, put into gold formation source electrode (20) and drain electrode (21) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Then, device was annealed 24 hours under vacuum.At last, spin coating polyvinyl alcohol (PVA) aqueous solution is as the liquid crystal molecular orientation layer of protective layer (23) double as matrix base plate (17), thickness 150nm.
Be liquid crystal cell envelope box technology then: the upper substrate (28) that has transparency electrode (29) and oriented layer (26) is carried out friction treatment with matrix base plate (17); Spray liquid crystal cell chock insulator matter (32) and envelope box glue (25); Press box; Perfusion liquid crystal layer (24); Point sealing mouth; Stick down polarizer (27).
Transmission-type active matrix liquid crystal display unit dot structure schematic diagram is seen accompanying drawing 4.
Embodiment 8
The processing method of reflective OTFT-LCD device
At first be OTFT matrix technology.Upward plate one deck Cr metal film and be photo-etched into holding wire and gate shapes (34) and pixel storage capacitor in 7059 glass substrate (33) with radio frequency magnetron sputtering method.The condition of sputter is: base vacuum 2 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 1Pa; Radio-frequency power 500W; Underlayer temperature is 100 ℃.Then, at grid with prepare the SiO of one deck 300 nanometers above the substrate continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (35).The condition of reactive sputtering is: base vacuum 2 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 5Pa; Direct current power 500W; 100 ℃ of degree of underlayer temperature.Deposit layer of metal aluminium (Al) again, and be photo-etched into reflecting electrode shape (44).Then, deposition one deck photoresist, exposure is developed, the mask of preparation active layer.10
-5Heating fills the quartz boat of CuPc powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor active layer (38) that forms about 30 nanometers of thickness on the room temperature substrate.In acetone solvent, peel off the active layer film of non-graph area again.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-4Behind the gold (Au) of thermal evaporation one deck 80 nanometers, put into gold formation source electrode (36) and drain electrode (37) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Then, device was annealed 5 hours under vacuum.At last, spin coating polyvinyl alcohol (PVA) aqueous solution is as the liquid crystal molecular orientation layer of protective layer (39) double as matrix base plate (33), thickness 150nm.
Be liquid crystal cell envelope box technology then: electrode (45) upper substrate (43) is carried out friction treatment with matrix base plate (33) to having; Spray liquid crystal cell chock insulator matter (46) and envelope box glue (41); Press box; Perfusion liquid crystal layer (40); Point sealing mouth; Stick polarizer (42).
Reflecting active matrix liquid crystal display dot structure schematic diagram is seen accompanying drawing 5.
Embodiment 9
The processing method of transflective OTFT-LCD device
At first be OTFT matrix technology.Upward plate one deck Ta metal film and be photo-etched into holding wire and gate shapes (48) in 7059 glass substrate (47) with radio frequency magnetron sputtering method.Wherein etching metal Ta adopts reactive ion etching (RIE) dry technique.The condition of sputter is: base vacuum 3 * 10
-3Pa; Feeding Ar gas makes the sputter vacuum reach 4Pa; Radio-frequency power 600W; Underlayer temperature is 90 ℃.Then, at grid with prepare the SiO of one deck 150 nanometers above the substrate continuously with the magnetically controlled DC sputtering reactive sputtering method
2As gate insulation layer (49).The condition of reactive sputtering is: base vacuum 6 * 10
-3Pa; Feed O
2Gas makes the sputter vacuum reach 1.5Pa; Direct current power 400W; 100 ℃ of degree of underlayer temperature.With the continuous sputter layer of transparent of dc magnetron sputtering method conducting film (ITO), thickness is 150nm again, and is photo-etched into pixel electrode shape (58).Then, deposition one deck photoresist, exposure is developed, the mask of preparation active layer.10
-5Heating fills the quartz boat of CuPc powder under the high vacuum of Pa, makes it to be sublimate into the semiconductor active layer (52) that forms about 50 nanometers of thickness on the room temperature substrate.In acetone solvent, peel off the active layer film of non-graph area again.Then, preparation adopts the positive photoetching rubber preparation to leak version, 10
-5Behind the gold (Au) of thermal evaporation one deck 30 nanometers, put into gold formation source electrode (50) and drain electrode (51) that acetone solvent peels off non-graph area again under the high vacuum of Pa.Then, device was annealed 8 hours under vacuum.Spin coating polyvinyl alcohol (PVA) aqueous solution is as the liquid crystal molecular orientation layer of protective layer (53) double as matrix base plate (47), thickness 300nm again.At last, deposition layer of metal aluminium (Al) on PVA, and be photo-etched into reflecting electrode shape (60).
Be liquid crystal cell envelope box technology then: electrode (59) upper substrate (57) is carried out friction treatment with matrix base plate (47) to having; Spray liquid crystal cell chock insulator matter (61) and envelope box glue (55); Press box; Perfusion liquid crystal layer (54); Point sealing mouth; Stick down polarizer (56).
Transflective active matrix liquid crystal display unit dot structure schematic diagram is seen accompanying drawing 6.
The patterning active layer has not only been realized the processing of OTFT active matrix liquid crystal display apparatus, has also opened up road for the application based on the aspects such as logical circuit, organic thin film solar cell and organic sensor of OTFT.
The invention is not restricted to each embodiment.In general, the disclosed organic transistor of this patent can be processed to form the element in the integrated device of two and three dimensions.These integrated devices may be applied in aspects such as flexible integrated circuit, Active Matrix LCD At and transducer.Use can low temperature process based on thin-film transistor element of the present invention.Process thin-film transistor of the present invention and be not limited to traditional photoetching process, also can adopt processing methods such as printing, printing.
Claims (14)
1. the OTFT preparation method of a patterning active layer mainly may further comprise the steps: the first step, formation gate electrode (2) on substrate (1); In second step, go up formation insulated gate layer (3) at substrate (1) and gate electrode (2); In the 3rd step, go up formation source electrode (4) and drain electrode (5) at insulated gate layer (3); In the 4th step, go up formation photoresist mask (7) at source electrode (4), drain electrode (5) and insulated gate layer (3); In the 5th step, go up formation organic semiconductor layer (6) and (8) at photoresist mask (7), source electrode (4), drain electrode (5) and insulated gate layer (3); The 6th the step, the organic semiconductor (8) of stripping photoresist mask (7) and non-graph area in photoresist solvent, formation patterning organic semiconductor layer (6); The 7th step, annealing in a vacuum.
2. the preparation method of an OTFT mainly may further comprise the steps: the first step, formation gate electrode (10) on substrate (9); In second step, go up formation insulated gate layer (11) at substrate (9) and gate electrode (10); In the 3rd step, go up formation photoresist mask (13) at insulated gate layer (11); In the 4th step, go up formation organic semiconductor layer (12) and (14) at photoresist mask (13) and insulated gate layer (11); The 5th the step, the organic semiconductor (14) of stripping photoresist mask (13) and non-graph area in photoresist solvent, formation patterning organic semiconductor layer (12); The 6th step, annealing in a vacuum; In the 7th step, go up formation source electrode (15) and drain electrode (16) at organic semiconductor layer (12) and insulated gate layer (11).
3. preparation method according to claim 2 is characterized in that the organic semiconducting materials that can be used for peeling off is CuPc, Phthalocyanine Zinc, phthalocyanine nickel, fluoro CuPc, fluoro phthalocyanine chromium, pentacene, five thiophene or six thiophene of high-sequential.
4. organic semiconductor according to claim 3 is characterized in that described organic semiconductor is by two or more organic semiconductor blend, eutectic or stratiform is compound to constitute.
5. method for preparing active matrix liquid crystal display apparatus mainly may further comprise the steps: the first step, go up sputter or evaporation layer of metal Ta, Ti, W or MO at substrate (17), and be photo-etched into gate electrode (18); Second step, the gate insulating film (19) of sputter or evaporation one deck high dielectric property matter, Ta
2O
5, Al
2O
3, TiO
2Or BZT; The 3rd step, sputter evaporation transparent pixels electrode and photoetching moulding (30); In the 4th step, behind coating one deck photoresist on the substrate, exposure is developed, and forms the photoresist mask); In the 5th step, the vacuum thermal evaporation organic semiconducting materials is as active layer; The 6th step, the organic semiconductor thin-film of stripping photoresist mask and non-graph area in photoresist solvent, form patterning organic semiconductor layer (22); The 7th step, vacuum thermal evaporation layer of metal Au, Ag, Mo or Al, and be photo-etched into source/drain electrode (20) and (21); In the 8th step, under vacuum condition or nitrogen atmosphere, anneal; In the 9th step, spin coating one deck PVA is as the diaphragm liquid crystal molecular orientation layer of holding concurrently; The tenth step, the encapsulated liquid crystal box.
6. preparation method according to claim 5 is characterized in that the organic semiconducting materials that can be used for peeling off is CuPc, Phthalocyanine Zinc, phthalocyanine nickel, fluoro CuPc, fluoro phthalocyanine chromium, pentacene, five thiophene or six thiophene of high-sequential.
7. organic semiconductor according to claim 6 is characterized in that described organic semiconductor is by two or more organic semiconductor blend, eutectic or stratiform is compound to constitute.
8. method for preparing active matrix liquid crystal display apparatus mainly may further comprise the steps: the first step, go up sputter or evaporation layer of metal Ta, Ti, W or MO at substrate (33), and be photo-etched into gate electrode (34); Second step, the gate insulating film (35) of sputter or evaporation one deck high dielectric property matter, Ta
2O
5, Al
2O
3, TiO
2Or BZT; In the 3rd step, on insulated gate, form reflecting electrode (44); In the 4th step, behind coating one deck photoresist on the substrate, exposure is developed, and forms the photoresist mask; In the 5th step, the vacuum thermal evaporation organic semiconducting materials is as active layer; The 6th step, the organic semiconductor of stripping photoresist mask and non-graph area in photoresist solvent, form patterning organic semiconductor layer (38); The 7th step, vacuum thermal evaporation layer of metal Au, Ag, Mo or Al, and be photo-etched into source/drain electrode (36) and (37); In the 8th step, under vacuum condition or nitrogen atmosphere, anneal; In the 9th step, spin coating one deck PVA is as the diaphragm liquid crystal molecular orientation layer (39) of holding concurrently; The tenth step, the encapsulated liquid crystal box.
9. preparation method according to claim 8 is characterized in that the organic semiconducting materials that can be used for peeling off is CuPc, Phthalocyanine Zinc, phthalocyanine nickel, fluoro CuPc, fluoro phthalocyanine chromium, pentacene, five thiophene or six thiophene of high-sequential.
10. organic semiconductor according to claim 9 is characterized in that described organic semiconductor is by two or more organic semiconductor blend, eutectic or stratiform is compound to constitute.
11. preparation method according to claim 9 is characterized in that photoresist is the positive glue and the negative glue that can dissolve removal.
12. a method for preparing active matrix liquid crystal display apparatus mainly may further comprise the steps: the first step, go up one or more of sputter or evaporation layer of metal Ta, Ti, W, MO at substrate (47), and be photo-etched into gate electrode (48); Second step, the gate insulating film (49) of sputter or evaporation one deck high dielectric property matter, SiO
2, Ta
2O
5, Al
2O
3, TiO
2, BZT one or more; The 3rd step, sputter evaporation transparent pixels electrode and photoetching moulding (58); In the 4th step, behind coating one deck photoresist on the substrate, exposure is developed, and forms the photoresist mask; In the 5th step, the vacuum thermal evaporation organic semiconducting materials is as active layer; The 6th step, the organic semiconductor of stripping photoresist mask and non-graph area in photoresist solvent, form patterning organic semiconductor layer (52); The 7th step, vacuum thermal evaporation layer of metal Au, Ag, Mo or Al, and be photo-etched into source/drain electrode (50) and (51); In the 8th step, under vacuum condition or nitrogen atmosphere, anneal; In the 9th step, spin coating one deck PVA is as the diaphragm liquid crystal molecular orientation layer (53) of holding concurrently; The tenth step, deposition layer of metal Al or Ag on PVA, and be photo-etched into reflecting electrode shape (60).The 11 step, the encapsulated liquid crystal box.
13. preparation method according to claim 12 is characterized in that the organic semiconducting materials that can be used for peeling off is CuPc, Phthalocyanine Zinc, phthalocyanine nickel, fluoro CuPc, fluoro phthalocyanine chromium, pentacene, five thiophene or six thiophene of high-sequential.
14. organic semiconductor according to claim 13 is characterized in that described organic semiconductor is by two or more organic semiconductor blend, eutectic or stratiform is compound to constitute.
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| CN100573959C (en) * | 2007-10-24 | 2009-12-23 | 中国科学院微电子研究所 | A kind of preparation method of OTFT of active layer graph |
| CN100585903C (en) * | 2007-11-21 | 2010-01-27 | 中国科学院微电子研究所 | A mask lithography defines the method for OTFT source drain-gate electrode simultaneously |
| CN101800287B (en) * | 2009-02-11 | 2011-12-07 | 中国科学院微电子研究所 | Manufacturing method of organic field effect transistor with plane structure |
| CN106596653A (en) * | 2016-12-09 | 2017-04-26 | 长春工业大学 | Method for preparing three-dimensional efficient organic thin-film sensor device |
| CN115109063A (en) * | 2021-09-10 | 2022-09-27 | 天津大学 | Bipolar semiconductor material based on D-A type phthalocyanine eutectic and preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000174277A (en) * | 1998-12-01 | 2000-06-23 | Hitachi Ltd | Thin film transistor and its manufacture |
| US6300988B1 (en) * | 1999-03-16 | 2001-10-09 | Hitachi, Ltd. | Liquid crystal display apparatus having patterned insulating layer formed over a substrate except for a region on the gate electrode |
| CN1398007A (en) * | 2001-06-01 | 2003-02-19 | 株式会社半导体能源研究所 | Organic semiconductor device and its mfg. technique |
| JP2003092410A (en) * | 2001-09-19 | 2003-03-28 | Nec Corp | Thin film transistor |
| WO2004005379A1 (en) * | 2002-07-09 | 2004-01-15 | Sumitomo Chemical Company, Limited | Polymer thin film and polymer thin film device using same |
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2005
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000174277A (en) * | 1998-12-01 | 2000-06-23 | Hitachi Ltd | Thin film transistor and its manufacture |
| US6300988B1 (en) * | 1999-03-16 | 2001-10-09 | Hitachi, Ltd. | Liquid crystal display apparatus having patterned insulating layer formed over a substrate except for a region on the gate electrode |
| CN1398007A (en) * | 2001-06-01 | 2003-02-19 | 株式会社半导体能源研究所 | Organic semiconductor device and its mfg. technique |
| JP2003092410A (en) * | 2001-09-19 | 2003-03-28 | Nec Corp | Thin film transistor |
| WO2004005379A1 (en) * | 2002-07-09 | 2004-01-15 | Sumitomo Chemical Company, Limited | Polymer thin film and polymer thin film device using same |
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