CN102263201A - Organic field effect transistor and preparation method thereof - Google Patents
Organic field effect transistor and preparation method thereof Download PDFInfo
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- CN102263201A CN102263201A CN2010101817878A CN201010181787A CN102263201A CN 102263201 A CN102263201 A CN 102263201A CN 2010101817878 A CN2010101817878 A CN 2010101817878A CN 201010181787 A CN201010181787 A CN 201010181787A CN 102263201 A CN102263201 A CN 102263201A
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Abstract
The invention discloses an organic field effect transistor and a preparation method thereof, belonging to the field of organic electronics. The transistor comprises an insulating substrate, and a source electrode, a dielectric layer, a gate electrode, an organic semiconductor layer and a drain electrode which are arranged on the insulating substrate, wherein the source electrode is positioned on the insulating substrate and is in contact with the insulating substrate; the organic semiconductor layer is positioned in the center of the transistor, the upper end of the organic semiconductor layer is in contact with the drain electrode, and the lower end of the organic semiconductor layer is in contact with the source electrode; the grid electrode is two strip-shaped grid electrodes which are respectively positioned at two sides of the organic semiconductor layer; the dielectric layer is in a groove shape, the strip-shaped gate electrode is wrapped in the groove, and the dielectric layer isolates the gate electrode from the organic semiconductor layer, the source electrode and the drain electrode. The invention adopts low temperature process, improves the channel from the traditional plane type to the vertical type, controls the length of the channel of the transistor by controlling the thickness of the thin film of the organic semiconductor layer, greatly reduces the difficulty of preparing the short-channel organic transistor and reduces the preparation cost.
Description
Technical field
The invention belongs to organic electronic and learn field, particularly a kind of organic field effect tube and preparation method thereof.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work; People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life; Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on the organic polymer semi-conducting material that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.
Organic field effect tube is as the basic device of organic circuit, and its performance is to the performance decisive role of circuit.Wherein mobility has determined the speed of device work, and then influences the operating frequency of circuit; Voltage comprises operating voltage and threshold voltage, has determined the power consumption of device and circuit.Because the amount of information explosive growth, people wish that all the time the information processing technology can be more and more faster, and the content that can handle is more and more.The factor of restriction information processing technology speed has a lot, comprises hardware aspect, also comprises the software aspect.The operating frequency of unit component is the basic problem of hardware aspect.The operating frequency that improves device mainly contains two paths: Yi Tiaolu and reduces channel length, and another road is to improve the mobility of charge carrier rate.Under the situation that does not have important breakthrough aspect the present material, the mobility of charge carrier rate improves very limited, and the method that therefore improves the device operating frequency mainly is exactly the length that reduces raceway groove.The factor of restriction information processing technology capacity equally also has a lot, mainly is the integrated level of circuit at hardware aspect, and the integrated level that improves circuit need reduce the area of unit component.Therefore, there is the defective that the device operating frequency is low, circuit level is low in existing organic field effect tube.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of organic field effect tube that improves device operating frequency and circuit level.
Another object of the present invention is to provide a kind of preparation method of organic field effect tube.
In order to achieve the above object, the technical solution used in the present invention is:
A kind of organic field effect tube comprises dielectric substrate and source electrode, dielectric layer, gate electrode, organic semiconductor layer and drain electrode on described dielectric substrate, and described source electrode is positioned on the described dielectric substrate, and contacts with described dielectric substrate; Described organic semiconductor layer is positioned at described transistor central authorities, and described organic semiconductor layer upper end contacts with described drain electrode, and the lower end contacts with described source electrode; Described gate electrode is the gate electrode of two strips, lays respectively at the both sides of described organic semiconductor layer; Described dielectric layer is a grooved, is symmetrically distributed in the both sides of described organic semiconductor layer, and the gate electrode of described strip is wrapped in its groove, and described dielectric layer is kept apart described gate electrode and described organic semiconductor layer, source electrode, drain electrode.
In the such scheme, described source electrode and drain electrode are planar metal electrode.
In the such scheme, described dielectric substrate is long silicon chip, insulating glass or the ambroin film that silica or insulating silicon nitride film are arranged.
In the such scheme, the material of described dielectric layer is inorganic material or organic material.
In the such scheme, the material of described organic semiconductor layer is pentacene, CuPc, P3HT, thiophene or red glimmering rare.
In the such scheme, the material of described gate electrode is metallic conduction material or conductive organic matter.
In the such scheme, the material of described source electrode and drain electrode is that high official letter is counted metal material or conductive organic matter.
A kind of preparation method of organic field effect tube, this method comprises:
(1) the source electrode on preparation plane on dielectric substrate;
(2) metallization medium layer on described source electrode layer;
(3) gate electrode of preparation strip on described dielectric layer;
(4), and remove the unnecessary dielectric layer of bottom source electrode surface in the sidewall and the top metallization medium layer of described gate electrode;
(5) at transistor central authorities deposition organic semiconductor layer;
(6) drain electrode on preparation plane on dielectric layer and organic semiconductor layer.
In the such scheme, in described step (1), the concrete grammar of the source electrode on preparation plane is: adopt the hot physical deposition of vacuum, electron beam deposition or splash-proofing sputtering metal electrode; Perhaps, adopt inkjet printing or spin coating organic substance electrode.
In the such scheme, in described step (2), the concrete grammar of preparation dielectric layer is: adopt the method for low-pressure chemical vapor deposition, sputter or ald to prepare the inorganic medium layer; Perhaps, adopt spin coating or inkjet printing methods deposition organic dielectric layer.
In the such scheme, in described step (3), the concrete grammar of preparation gate electrode is: adopt photoetching technique to define its corresponding glue pattern of carving, come plated metal by the method for electron beam evaporation, sputter or thermal evaporation again, come transition diagram by the method for metal-stripping at last, thereby prepare metal gate electrode; Perhaps, adopt inkjet technology to deposit and graphical organic gate electrode.
In the such scheme, in described step (4), the concrete grammar of preparation dielectric layer is: the inorganic medium layer deposits by the method for low-pressure chemical vapor deposition, sputter or ald, make it have good step coverage, thereby can be attached on the gate electrode sidewall, then by photoetching and anisotropic dry etching material removal medium unnecessary on the electrode surface of source, thereby obtain the dielectric layer of groove shape; Organic dielectric layer comes the deposition medium film by spin coating technique, after the annealed processing again by photoetching technique definition figure, at last by lithographic technique material removal medium unnecessary on the drain electrode surface, thereby obtain the dielectric layer of groove shape.
In the such scheme, in described step (5), the concrete grammar of preparation organic semiconductor layer is: organic semiconductive layer prepares film by spin coating technique at a slow speed, makes it have good step coverage; By anisotropic dry etching the organic semiconducting materials beyond the sidewall is removed then, formed patterned active layer.
In the such scheme; in described step (6); the concrete grammar of the drain electrode on preparation plane is: at first by photoetching technique gate electrode and dielectric layer are protected; come the deposit metal electrodes film by the hot physical deposition of vacuum, electron beam deposition or sputtering technology then; perhaps; adopt inkjet printing or spin coating technique to come the sedimentary organic material electrode film, go then to remove the photoresist of gate electrode area and unnecessary electrode material, finish the whole transistor preparation by the method for peeling off.
Compared with prior art, technical solution of the present invention has following beneficial effect:
The organic field effect tube that the present invention proposes, by raceway groove is improved to vertical-type by traditional plane, thereby as long as the channel length that the film thickness by controlling organic semiconductor layer just can oxide-semiconductor control transistors, avoided the lower electron beam lithography of service efficiency, reduce the difficulty of preparation short channel organic transistor significantly, thereby reduced the cost of preparation.The present invention has adopted the gate electrode of strip, thereby length-width ratio that can the regulated at will device channel has enlarged its range of application, has adopted the structure of double channel simultaneously, has increased the current driving ability of device.The present invention can effectively reduce the device area occupied, has improved the integrated level of circuit.
The present invention also provides the preparation method of organic field effect tube, adopt low temperature process, can not cause damage ready-made other organic functional thin films, and can with existing silicon micromachining technology compatibility, can make full use of existing equipment, reduce the cost of new unit preparation.
Description of drawings
The three-dimensional structure diagram of the organic field effect tube that Fig. 1 provides for the embodiment of the invention;
The profile of the organic field effect tube that Fig. 2 provides for the embodiment of the invention;
The flow chart of the preparation organic field effect tube that Fig. 3 provides for the embodiment of the invention;
Fig. 3-1 is the embodiment of the invention prepares the source electrode on plane on dielectric substrate a schematic diagram;
Fig. 3-2 is the schematic diagram of embodiment of the invention metallization medium layer on source electrode layer;
Fig. 3-3 is the embodiment of the invention prepares the strip gate electrode on dielectric layer a schematic diagram;
Fig. 3-4 is the schematic diagram of embodiment of the invention metallization medium layer on gate electrode;
Fig. 3-5 is the embodiment of the invention deposits organic semiconductor layer on the electrode of source a schematic diagram;
Fig. 3-6 prepares the schematic diagram of the drain electrode on plane for the embodiment of the invention;
Fig. 4 prepares the process chart of the method for organic field effect tube for the present invention's one specific embodiment;
Fig. 4-1～Fig. 4-11 prepares the structural representation of organic field effect tube process for the present invention's one specific embodiment.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Referring to Fig. 1 and Fig. 2, the embodiment of the invention provides a kind of organic field effect tube, comprises dielectric substrate 101 and the plane source electrode 102 on described dielectric substrate 101, dielectric layer 103, gate electrode 104, organic semiconductor layer 105 and plane drain electrode 106; Plane source electrode 102 is positioned on the dielectric substrate 101, and contacts with dielectric substrate 101; Organic semiconductor layer 105 is positioned at transistor central authorities, and organic semiconductor layer 105 upper ends contact with plane drain electrode 106, and the lower end contacts with plane source electrode 102; Described gate electrode 104 is the gate electrode of two strips, lays respectively at the both sides of organic semiconductor layer 105; Dielectric layer 103 is a grooved, is symmetrically distributed in the both sides of organic semiconductor layer 105, and the gate electrode 104 of strip is wrapped in its groove, and dielectric layer 103 is kept apart gate electrode 104 and organic semiconductor layer 105, plane source electrode 102, plane drain electrode 106.
Dielectric substrate is silicon chip, insulating glass or the ambroin film etc. that insulation films such as silica, silicon nitride are arranged.
When the material of dielectric layer is inorganic material, can be inorganic material such as silica, silicon nitride, zirconia, aluminium oxide, tantalum oxide or hafnium oxide; When the material of dielectric layer is organic material, can be polyimides (PI), polyethylene pyrrolidone (PVP), polymethyl acrylate (PMMA) or Parylene organic materials such as (parylene).
The material of organic semiconductor layer is pentacene, CuPc (CuPc), P3HT, thiophene or red glimmering organic semiconducting materials such as rare.
The material of gate electrode is conductive organic matters such as metallic conduction materials such as gold, aluminium, platinum, copper or silver, or PEDOT:PSS.
The material of source electrode and drain electrode is that gold, platinum, silver-colored contour official letter are counted conductive organic matters such as metal material or PEDOT:PSS.
The organic field effect tube that the embodiment of the invention proposes, source electrode 102 and drain electrode 106 are plane electrode, lay respectively at transistorized bottom and top, contact with organic semiconductor layer 105, make the channel direction of device change vertical direction into from horizontal direction, form vertical channel organic field-effect transistor, thereby as long as the channel length that the film thickness by controlling organic semiconductor layer 105 just can oxide-semiconductor control transistors, avoided the lower electron beam lithography of service efficiency, reduce the difficulty of preparation short channel organic transistor significantly, thereby reduced the cost of preparation.
The embodiment of the invention has adopted the gate electrode 104 of strip, thereby length-width ratio that can the regulated at will device channel has enlarged its range of application; Owing to adopted double grid electrode, caused same organic semiconductor layer 105 and dielectric layer 103 to form two interfaces, further form the structure of double channel, increased the current driving ability of device.The embodiment of the invention can effectively reduce the device area occupied, improves the integrated level of circuit.
Referring to Fig. 3 and Fig. 3-1～Fig. 3-6, the embodiment of the invention also provides a kind of preparation method of organic field effect tube, and this method comprises the steps:
301, the source electrode on preparation plane on dielectric substrate is shown in Fig. 3-1;
302, metallization medium layer on source electrode layer makes its graphical so that isolate gate electrode and source electrode, shown in Fig. 3-2;
303, the gate electrode of preparation strip on the described dielectric layer of step 302 is shown in Fig. 3-3;
304, metallization medium layer makes its sidewall that sticks to gate electrode and top, makes its graphical so that isolate gate electrode and drain electrode, organic semiconductor layer, and removes the unnecessary dielectric layer of bottom source electrode surface, as shown in Figure 3-4;
305, the deposition organic semiconductor layer makes it be in whole transistor central authorities, shown in Fig. 3-5;
306, the drain electrode on preparation plane is finished transistorized making, shown in Fig. 3-6.
Describe an embodiment who more optimizes below in detail:
The organic field effect tube that present embodiment provides comprises: thermal oxidation silicon dielectric substrate 401, Au source, plane electrode 402, strip Au metal gate electrode, SiO
2 Dielectric layer 406, pentacene organic semiconductor layer 407 and plane Au drain electrode 408.
Referring to Fig. 4, Fig. 4 is the preparation method's of the organic field effect tube that provides of present embodiment a concrete process chart; Referring to Fig. 4-1～Fig. 4-11, Fig. 4-1～Fig. 4-the 11st, in conjunction with the making flow chart that the processing step of Fig. 4 is made, its step of explaining is as follows:
501, at the SiO of thermal oxide growth
2The Au source electrode 402 on preparation plane on the dielectric substrate 401 is shown in Fig. 4-1;
502, on source electrode layer, prepare SiO by ald
2Dielectric layer 403 is shown in Fig. 4-2;
503, add the graphical SiO of lithographic technique by photoetching
2 Dielectric layer 403 is shown in Fig. 4-3;
504, the glue pattern 404 for preparing the strip gate electrode by photoetching technique is shown in Fig. 4-4;
505, electron-beam evaporation Au film 405 is shown in Fig. 4-5;
506, prepare the Au gate electrode by lift-off technology, shown in Fig. 4-6;
507, prepare SiO by technique for atomic layer deposition
2Dielectric layer 406 makes around its gate electrode that is wrapped in strip, shown in Fig. 4-7;
508, add lithographic technique by photoetching and remove strip gate electrode dielectric layer in addition, shown in Fig. 4-8;
509, deposition organic semiconductor layer 407 on source electrode 402 is shown in Fig. 4-9;
510, remove channel region organic semiconductor in addition by lithographic technique, shown in Fig. 4-10;
511, the Au drain electrode 408 for preparing the plane by electron beam evaporation is shown in Fig. 4-11.
The preparation method of the organic field effect tube that the embodiment of the invention provides, adopt low temperature process, can not cause damage ready-made other organic functional thin films, and can with existing silicon micromachining technology compatibility, can make full use of existing equipment, reduce the cost of new unit preparation.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. organic field effect tube, comprise dielectric substrate and source electrode, dielectric layer, gate electrode, organic semiconductor layer and drain electrode on described dielectric substrate, it is characterized in that: described source electrode is positioned on the described dielectric substrate, and contacts with described dielectric substrate; Described organic semiconductor layer is positioned at described transistor central authorities, and described organic semiconductor layer upper end contacts with described drain electrode, and the lower end contacts with described source electrode; Described gate electrode is the gate electrode of two strips, lays respectively at the both sides of described organic semiconductor layer; Described dielectric layer is a grooved, is symmetrically distributed in the both sides of described organic semiconductor layer, and the gate electrode of described strip is wrapped in its groove, and described dielectric layer is kept apart described gate electrode and described organic semiconductor layer, source electrode, drain electrode.
2. organic field effect tube according to claim 1 is characterized in that: described source electrode and drain electrode are planar metal electrode.
3. organic field effect tube according to claim 1 is characterized in that: described dielectric substrate is long silicon chip, insulating glass or the ambroin film that silica or insulating silicon nitride film are arranged.
4. organic field effect tube according to claim 1 is characterized in that: the material of described dielectric layer is inorganic material or organic material.
5. organic field effect tube according to claim 1 is characterized in that: the material of described organic semiconductor layer is pentacene, CuPc, P3HT, thiophene or red glimmering rare.
6. organic field effect tube according to claim 1 is characterized in that: the material of described gate electrode is metallic conduction material or conductive organic matter.
7. organic field effect tube according to claim 1 is characterized in that: the material of described source electrode and drain electrode is that high official letter is counted metal material or conductive organic matter.
8. the preparation method of an organic field effect tube, it is characterized in that: described method comprises:
(1) the source electrode on preparation plane on dielectric substrate;
(2) metallization medium layer on described source electrode layer;
(3) gate electrode of preparation strip on described dielectric layer;
(4), and remove the unnecessary dielectric layer of bottom source electrode surface in the sidewall and the top metallization medium layer of described gate electrode;
(5) at transistor central authorities deposition organic semiconductor layer;
(6) drain electrode on preparation plane on dielectric layer and organic semiconductor layer.
9. the preparation method of organic field effect tube according to claim 8 is characterized in that:
In described step (1), the concrete grammar of the source electrode on preparation plane is: adopt the hot physical deposition of vacuum, electron beam deposition or splash-proofing sputtering metal electrode; Perhaps, adopt inkjet printing or spin coating organic substance electrode;
In described step (2), the concrete grammar of preparation dielectric layer is: adopt the method for low-pressure chemical vapor deposition, sputter or ald to prepare the inorganic medium layer; Perhaps, adopt spin coating or inkjet printing methods deposition organic dielectric layer;
In described step (3), the concrete grammar of preparation gate electrode is: adopt photoetching technique to define its corresponding glue pattern of carving, come plated metal by the method for electron beam evaporation, sputter or thermal evaporation again, come transition diagram by the method for metal-stripping at last, thereby prepare metal gate electrode; Perhaps, adopt inkjet technology to deposit and graphical organic gate electrode;
In described step (4), the concrete grammar of preparation dielectric layer is: the inorganic medium layer deposits by the method for low-pressure chemical vapor deposition, sputter or ald, make it have good step coverage, thereby can be attached on the gate electrode sidewall, then by photoetching and anisotropic dry etching material removal medium unnecessary on the electrode surface of source, thereby obtain the dielectric layer of groove shape; Organic dielectric layer comes the deposition medium film by spin coating technique, after the annealed processing again by photoetching technique definition figure, at last by lithographic technique material removal medium unnecessary on the drain electrode surface, thereby obtain the dielectric layer of groove shape;
In described step (5), the concrete grammar of preparation organic semiconductor layer is: organic semiconductive layer prepares film by spin coating technique at a slow speed, makes it have good step coverage; By anisotropic dry etching the organic semiconducting materials beyond the sidewall is removed then, formed patterned active layer;
In described step (6), the concrete grammar of the drain electrode on preparation plane is: at first by photoetching technique gate electrode and dielectric layer are protected, come the deposit metal electrodes film by the hot physical deposition of vacuum, electron beam deposition or sputtering technology then; Perhaps, adopt inkjet printing or spin coating technique to come the sedimentary organic material electrode film, remove the photoresist of gate electrode area and unnecessary electrode material by the method for peeling off then, finish the whole transistor preparation.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751436A (en) * | 2012-06-12 | 2012-10-24 | 清华大学 | Vertical selection pipe, storage unit, three-dimensional memory array and operation method thereof |
| CN105322092A (en) * | 2014-12-04 | 2016-02-10 | 中国计量学院 | Organic field-effect tube of composite channel |
| CN107478320A (en) * | 2017-08-23 | 2017-12-15 | 京东方科技集团股份有限公司 | Transistor sound sensing element and preparation method thereof, sonic transducer and portable equipment |
| WO2023115654A1 (en) * | 2021-12-21 | 2023-06-29 | 北京超弦存储器研究院 | Indium tin oxide vertical gate-all-around field effect transistor and preparation method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105322092A (en) * | 2014-12-04 | 2016-02-10 | 中国计量学院 | Organic field-effect tube of composite channel |
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| CN107478320A (en) * | 2017-08-23 | 2017-12-15 | 京东方科技集团股份有限公司 | Transistor sound sensing element and preparation method thereof, sonic transducer and portable equipment |
| CN107478320B (en) * | 2017-08-23 | 2019-11-05 | 京东方科技集团股份有限公司 | Transistor sound sensing element and preparation method thereof, sonic transducer and portable equipment |
| US11043644B2 (en) | 2017-08-23 | 2021-06-22 | Boe Technology Group Co., Ltd. | Transistor acoustic sensor element and method for manufacturing the same, acoustic sensor and portable device |
| WO2023115654A1 (en) * | 2021-12-21 | 2023-06-29 | 北京超弦存储器研究院 | Indium tin oxide vertical gate-all-around field effect transistor and preparation method therefor |
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