CN105322092B - A kind of organic field-effect tube of composite channel - Google Patents
A kind of organic field-effect tube of composite channel Download PDFInfo
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- CN105322092B CN105322092B CN201410734606.8A CN201410734606A CN105322092B CN 105322092 B CN105322092 B CN 105322092B CN 201410734606 A CN201410734606 A CN 201410734606A CN 105322092 B CN105322092 B CN 105322092B
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- active layer
- effect tube
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- composite channel
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Abstract
The present invention discloses a kind of organic field-effect tube of composite channel, belongs to microelectronics organic assembly field.The organic field-effect tube field-effect characteristic of horizontal superposition is undesirable at this stage, does not reach modern integrated circuits technological requirement far.The present invention proposes a kind of organic field-effect tube of composite channel, forms compound active layer that is horizontal, being longitudinally superimposed by using photoetching process and mask method, is formed and be sequentially overlapped by substrate, gate electrode, gate dielectric layer, active layer, source-drain electrode.This structure increases the number of interfaces of N-type active layer and p-type active layer, adds exciton disassociation and produces the quantity of carrier, so improve the field-effect characteristic of organic field-effect tube.A kind of organic field-effect tube of composite channel can provide a kind of new thought to prepare the good organic field-effect tube of field-effect characteristic, to organic field-effect tube commercial applications important.
Description
Technical field
The invention belongs to microelectronics organic assembly field, more particularly to a kind of organic field-effect tube of composite channel.
Background technology
Organic field-effect tube (OFET) has series of advantages：It can be made into the numerous property of can easily be accommodated of broad area device, material
Can, preparation process is simple, cost is low, good pliability etc..The research of OFET be to realize that full stress-strain circuit lays the first stone, therefore
The research of high-performance OFET just seems more urgent urgent.Modern integrated circuits technological requirement field-effect tube characteristic is good, for example carries
Flow transport factor is high, switching current than it is big, subthreshold swing is big, and current OFET does not reach wanting for Application of integrated circuit far
Ask.Carrier quantity is that carrier is by N-type and p-type active layer an important factor for influencing organic field-effect tube field-effect characteristic
Exciton disassociation produces at interface, thus, it is to improve current-carrying in OFET by rationally increasing N-type and p-type active layer interface
The effective way of quantum count.Many OFET active layers are that N-type active layer is superimposed with p-type active layer level at present, this structure N-type
The interface of active layer and p-type active layer very little, causes the carrier quantity that exciton disassociation produces inadequate.The present invention proposes a kind of multiple
The organic field-effect tube of raceway groove is closed, adds the number of interfaces of N-type active layer and p-type active layer, adds exciton disassociation generation
The quantity of carrier, so improve the field-effect characteristic of organic field-effect tube.The improvement of organic field-effect tube field-effect characteristic
For its commercial applications important.
The content of the invention
The purpose of the present invention is for above-mentioned problem, there is provided a kind of organic field-effect tube of composite channel.It is a kind of
The organic field-effect tube of composite channel, is superimposed with p-type active layer level and longitudinal direction by using N-type active layer, effectively increases N
The number of interfaces of type active layer and p-type active layer.
Technical scheme：
A kind of organic field-effect tube of composite channel, is made of substrate, gate electrode, gate dielectric layer, active layer, source-drain electrode
And be sequentially overlapped, active layer is compound active layer, it is by N-type longitudinal direction active layer, p-type longitudinal direction active layer, p-type horizontal active layer, N
Type horizontal active layer is formed, and forms the compound active layer of horizontal superposition by using photoetching process and mask method and what is be longitudinally superimposed answer
Close active layer.
N-type longitudinal direction active layer and each two layers of p-type longitudinal direction active layer, N-type horizontal active layer and p-type horizontal active layer each one
Layer；On the outside, N-type longitudinal direction active layer is in inner side for p-type longitudinal direction active layer；P-type horizontal active layer has close to gate electrode, N-type level
Active layer is close to source, drain electrode.
The substrate is attached most importance to doped silicon wafer.
The gate medium is SiO2。
The p-type active layer is pentacene-layer.
The N-type active layer is C60.
The source, electric leakage extremely Ag.
A kind of organic field-effect tube of composite channel, preparation process are as follows：
1) be put into after substrate is cleaned by ultrasonic successively with acetone, ethanol, deionized water respectively in glove box dry 1 it is small when,
To clean up substrate surface；
2) it is different according to substrate material, prepare corresponding gate electrode；
3) according to the difference of gate electrode, corresponding gate dielectric layer is prepared；
4) p-type that is horizontal, being longitudinally superimposed and N-type active layer are prepared on gate dielectric layer with photoetching process and mask method；
5) on active layer certain thickness source-drain electrode is evaporated using mask method；
The technical Analysis of the present invention：
A kind of organic field-effect tube of composite channel, by photoetching process and mask method formed it is horizontal, be longitudinally superimposed it is compound
Active layer, such a structure increases the number of interfaces of N-type active layer and p-type active layer, adds exciton disassociation and produces carrier
Quantity, the field-effect characteristic of organic field-effect tube can be improved.
The advantages of the present invention：
A kind of organic field-effect tube of composite channel, can obtain higher switching current than, higher carrier mobility
Rate, larger subthreshold swing.Organic field is caused using compound active layer that is horizontal, being longitudinally superimposed in the specific embodiment of the invention
The electron mobility of effect pipe reaches 3.50m2/ Vs, switching current ratio are 1.0 × 103, subthreshold swing 350mV/dec.Phase
Compared with the organic field-effect tube of the horizontal superposition of active layer, a kind of organic field-effect tube of composite channel can be to prepare field-effect characteristic
Good organic field-effect tube provides a kind of new thought, and the development to organic discrete device perhaps has significant impact.
Brief description of the drawings
Attached drawing 1 is a kind of organic field-effect tube structure diagram of composite channel；
In figure：1. heavy doping silicon chip；②SiO2Gate dielectric layer；3. p-type active layer pentacene；4. N-type active layer C60；⑤P
Type active layer pentacene；6. N-type active layer C60；7. Ag source electrodes；8. Ag drain electrodes.
Embodiment
As shown in Figure 1, a kind of organic field-effect tube of composite channel, its preparation process are as follows：
1) glove box is put into after heavy doping silicon chip being cleaned by ultrasonic 30 minutes successively with acetone, ethanol, deionized water respectively
When middle drying 1 is small, to clean up heavy doping silicon chip surface；
2) above-mentioned heavy doping silicon chip is placed in UV/ozone environment 120 minutes, obtains SiO2Gate dielectric layer；
3) in SiO2Positive photoetching rubber is applied on gate dielectric layer, after front baking, exposure, development, post bake technique, is lithographically derived
3. channel length 200nm；The pentacene active layer of hair 30nm thickness, control is deposited in heavily doped silicon on piece with Vacuum Coating method again
Evaporation rate processed is that vacuum is 1 × 10-4Pa；Remove photoresist after evaporation is good；
4) repeat step 3), it is lithographically derived 4., channel length 200nm；Again with Vacuum Coating method in heavily doped silicon on piece
The C60 active layers of evaporation hair 30nm thickness, it is that vacuum is 1 × 10 to control evaporation rate-4Pa；Remove photoresist after evaporation is good；
5) in above-mentioned heavily doped silicon on piece, with long 1200nm, the mask plate that width is 1000 μm, with speed evaporation 5nm it is thick
Pentacene active layer, vacuum be 1 × 10-4Pa；
6) in above-mentioned heavily doped silicon on piece, with long 1200nm, the mask plate that width is 1000 μm, with speed evaporation 40nm it is thick
C60 active layers, vacuum be 1 × 10-4Pa；
7) in above-mentioned heavily doped silicon on piece, with long 600nm, the mask plate that width is 1000 μm, with speed evaporation 60nm it is thick
Ag as source, drain electrode, vacuum is 1 × 10-4Pa。
A kind of organic field-effect tube of composite channel, litho machine used are 4 " single side litho machine of Sichuan south light H94-25C types,
Vacuum coating equipment used is JZZF＆DZS-500, and the electrology characteristic of device is by Agilent B1500A semiconductor devices analyzers
Measurement, all measurement process carry out in vacuum chamber.Test result indicates that：A kind of organic field-effect tube table of composite channel
Revealed higher switching current than, higher carrier mobility, larger subthreshold swing.The device electronic mobility reaches
To 3.50m2/ Vs, switching current ratio are 1.0 × 103, subthreshold swing 350mV/dec.Compared with the organic field effect of level superposition
Ying Guan, a kind of organic field-effect tube field-effect characteristic of composite channel are significantly improved.
Claims (6)
1. a kind of organic field-effect tube of composite channel, is made of simultaneously substrate, gate electrode, gate dielectric layer, active layer, source-drain electrode
It is sequentially overlapped, it is characterised in that：Active layer is compound active layer, it is by N-type longitudinal direction active layer, p-type longitudinal direction active layer, p-type water
Flat active layer, N-type horizontal active layer are formed, and the horizontal compound active layer of horizontal superposition is formed by using photoetching process and mask method
The series composite active layer being longitudinally superimposed；
Wherein N types longitudinal direction active layer and each two layers of p-type longitudinal direction active layer, N-type horizontal active layer and p-type horizontal active layer each one
Layer；On the outside, N types longitudinal direction active layer is in inner side for p-type longitudinal direction active layer；P type horizontal active layers are horizontal close to gate electrode, N-type
Active layer is close to source, drain electrode.
A kind of 2. organic field-effect tube of composite channel according to claim 1, it is characterised in that：The substrate is
Heavy doping silicon chip.
A kind of 3. organic field-effect tube of composite channel according to claim 1, it is characterised in that：The gate medium
For SiO2。
A kind of 4. organic field-effect tube of composite channel according to claim 1, it is characterised in that：The p-type is horizontal
Active layer and p-type longitudinal direction active layer are pentacene-layer.
A kind of 5. organic field-effect tube of composite channel according to claim 1, it is characterised in that：The N-type is horizontal
Active layer and N-type longitudinal direction active layer are C60.
A kind of 6. organic field-effect tube of composite channel according to claim 1, it is characterised in that：The source, electric leakage
Extremely Ag.
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| CN201410734606.8A CN105322092B (en) | 2014-12-04 | 2014-12-04 | A kind of organic field-effect tube of composite channel |
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| CN105322092B true CN105322092B (en) | 2018-05-04 |
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| CN101339947A (en) * | 2007-07-02 | 2009-01-07 | 恩益禧电子股份有限公司 | Semiconductor device |
| CN101404321A (en) * | 2008-10-31 | 2009-04-08 | 中国科学院微电子研究所 | Vertical channel organic field effect transistor and preparation method thereof |
| CN102263201A (en) * | 2010-05-25 | 2011-11-30 | 中国科学院微电子研究所 | Organic field effect transistor and preparation method thereof |
| CN103022150A (en) * | 2012-12-25 | 2013-04-03 | 京东方科技集团股份有限公司 | Thin film transistor, method for manufacturing same, array substrate and display device |
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2014
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339947A (en) * | 2007-07-02 | 2009-01-07 | 恩益禧电子股份有限公司 | Semiconductor device |
| CN101404321A (en) * | 2008-10-31 | 2009-04-08 | 中国科学院微电子研究所 | Vertical channel organic field effect transistor and preparation method thereof |
| CN102263201A (en) * | 2010-05-25 | 2011-11-30 | 中国科学院微电子研究所 | Organic field effect transistor and preparation method thereof |
| CN103022150A (en) * | 2012-12-25 | 2013-04-03 | 京东方科技集团股份有限公司 | Thin film transistor, method for manufacturing same, array substrate and display device |
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| Bottom contact ambipolar organic thin film transistor and organic inverter based on C<sub>60</sub>/pentacene heterostructure;Wang S.D.,et al;《Organic Electronics》;20060703;第7卷(第6期);全文 * |
| Dual Channel Operation Upon n-Channel Percolation in a Pentacene-C<sub>60</sub> Ambipolar Organic Thin Film Transistor;Noever Simon J.,et al;《Adv. Mater.》;20121220;第25卷(第15期);全文 * |
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