CN103187529A - C60 organic field effect transistor for passivating gate insulation layer by pentacene - Google Patents
C60 organic field effect transistor for passivating gate insulation layer by pentacene Download PDFInfo
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- CN103187529A CN103187529A CN2013100900814A CN201310090081A CN103187529A CN 103187529 A CN103187529 A CN 103187529A CN 2013100900814 A CN2013100900814 A CN 2013100900814A CN 201310090081 A CN201310090081 A CN 201310090081A CN 103187529 A CN103187529 A CN 103187529A
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- pentacene
- insulation layer
- field effect
- gate insulation
- organic field
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Abstract
The invention discloses a C60 organic field effect transistor for passivating a gate insulation layer by pentacene. The C60 organic field effect transistor is formed by stacking an indium tin oxide (ITO) glass substrate serving as a gate electrode, an organic polymethyl methacrylate (PMMA) gate insulation layer, an organic semiconductor pentacene passivation layer, an n-type organic semiconductor C60 active layer, an Al source electrode and an Al drain electrode. The C60 organic field effect transistor has the advantages that an organic semiconductor material pentacene thin layer is used as an organic field effect transistor of the insulation layer or an active layer interface passivation layer, so that capturing of charges can be reduced, and current carriers are easily transmitted; and furthermore, the appearance and the crystallinity degree of the active layer can be effectively changed, and the migration rate of the current carriers is improved. The invention provides an effective method for improving the performance of an n-type organic field effect transistor device; and the method is simple in technology and easy to implement and facilitates popularization and application.
Description
[technical field]
The invention belongs to the organic field effect tube in the organic electronic device technical field, particularly a kind of employing pentacene (Pentacene) is as the C60 organic field effect tube of gate insulation layer passivation.
[background technology]
Organic field effect tube owing to have material source wide, can be with flexible substrate compatibility, low temperature process, be fit to produce in enormous quantities and outstanding features such as low cost receive very big concern.Along with the maturation day by day of technology, organic field effect tube shows fine application prospect at numerous areas such as switch, memory, smart card and transducers.Yet although the application of organic field effect tube has obtained remarkable progress, big quantity research mainly concentrates on the p-type organic field effect tube, and less relatively to the research report of n type organic field effect tube.Wherein chief reason is n section bar material instability, and is responsive to oxygen and humidity ratio.Owing in the organic complementary circuit in future, require the device of n type and p-type all to possess good performance.Therefore, studying a kind of simple but effective method is considerable in order to the performance that improves n type organic field effect tube.
Generally speaking, the performance of organic field effect tube is not only relevant with active layer material, and modifying interface also plays an important role.Decorative layer can reduce capturing of electric charge on the one hand, makes the easier transmission of charge carrier, on the other hand, can effectively change pattern and the degree of crystallinity of active layer, thereby improve the mobility of charge carrier rate.The present invention proposes a kind of simply and effectively gate insulation layer passivating method and improves the semi-conductive degree of crystallinity of n type, fills up the trap of gate insulation layer, to improve the performance of n type organic field effect tube.
[summary of the invention]
The present invention seeks to overcome the deficiency that prior art exists, the C60 organic field effect tube of a kind of employing pentacene (Pentacene) as the gate insulation layer passivation is provided, utilize passivation layer to improve n type organic field effect tube performance, its preparation method technology is simple, easy to implement, and is easy to utilize.。
Technical scheme of the present invention:
A kind of pentacene that adopts is as the C60 organic field effect tube of gate insulation layer passivation, by tin indium oxide (ITO) glass substrate hold concurrently gate electrode, organic polymethyl methacrylate (PMMA) gate insulation layer, organic semiconductor pentacene (Pentacene) passivation layer, n type organic semiconductor C
60Active layer, Al source electrode and the stack of Al drain electrode are formed, and its structure expression is ITO/PMMA/Pentacene/C60/Al.
Described tin indium oxide (ITO) the glass substrate gate electrode thickness of holding concurrently is 0.7nm, and square resistance is 10 Ω/.
The organic polymethyl methacrylate of described grid (PMMA) gate insulation layer thickness is 390nm.
The thickness of described organic semiconducting materials pentacene (Pentacene) passivation layer is 2nm.
Described n type organic semiconductor C
60The thickness of active layer is 40nm, C
60The molecular weight of material is 720, and mobility is 10
-3Cm
2/ Vs.
The thickness of described Al source electrode, Al drain electrode is 150nm.
A kind of described employing pentacene may further comprise the steps as the preparation method of the C60 organic field effect tube of gate insulation layer passivation:
1) be that the indium oxide tin glass of 0.7nm is the gate electrode substrate of holding concurrently with thickness, its surface use respectively successively deionized water, acetone and isopropyl alcohol ultrasonic cleaning each once;
2) method of utilizing spin coating to get rid of film at above-mentioned gate electrode prepares thickness and is the PMMA gate insulation layer of 390nm;
3) adopting the vacuum vapour deposition deposit thickness at above-mentioned gate insulation layer is the pentacene passivation layer of 2nm;
4) adopting the vacuum vapour deposition deposit thickness at above-mentioned passivation layer is the C60 active layer of 40nm;
5) the mask version vacuum vapour deposition deposit thickness of the long 80 μ m of employing raceway groove and wide 4mm is aluminium source electrode, the aluminium drain electrode of 150nm.
Technical Analysis of the present invention:
This structure organic field effect tube adopts the scheme of known bottom gate top contact horizontal structure, comprises gate electrode, gate insulation layer, passivation layer, active layer and source, drain electrode, and its structure is ITO/PMMA/Pentacene/C60/Al.Particularly gate insulation layer adopts and adds the pentacene passivation layer at PMMA, on the one hand in order to prevent electron capture, obtains bigger electric transmission function, pattern and degree of crystallinity in order to improve active layer on the other hand, the crystallite dimension of active layer is increased, and crystal boundary reduces, thereby reduces trap.Compare with the device that does not add the gate insulation layer passivation, can realize higher carrier mobility and on-off ratio.
Advantage of the present invention and good effect:
With the organic field effect tube of pentacene (Pentacene) as gate insulation layer/active layer interface passivation, can obtain better semiconductor pattern, and then reach the on-off ratio of the higher mobility of device and Geng Gao; The passivation layer of best 2nm thickness can make the source leakage output current of device reach 4.13 * 10
-4A, field-effect mobility reaches 1.01cm
2/ Vs, on-off ratio are 10
4V; This method technology is simple, easy to implement, is a kind of effective ways of the n of raising type organic field effect tube device performance, and is easy to utilize.
[description of drawings]
Fig. 1 is this organic field effect tube structural representation.
Among the figure: 1. tin indium oxide (ITO) glass substrate gate electrode 2. organic polymethyl methacrylate (PMMA) gate insulation layers 3. organic semiconductor pentacene passivation layer 4.n type organic semiconductor C that hold concurrently
60Layer 5.Al source electrode 6.Al drain electrode
Fig. 2 is not for adding the C of gate insulation layer passivation layer
60The organic field effect tube characteristic curve, wherein: (a) output characteristic curve, (b) transfer characteristic curve.
Fig. 3 be pentacene as the C60 organic field effect tube characteristic curve of gate insulation layer passivation, wherein:
(a) output characteristic curve (b) transfer characteristic curve.
[embodiment]
Embodiment:
A kind of employing pentacene (Pentacene) is as the C60 organic field effect tube of gate insulation layer passivation, as shown in drawings, be made up of tin indium oxide gate electrode 1, PMMA gate insulation layer 2, pentacene passivation layer 3, C60 active layer 4, Al source electrode 5 and 6 stacks of Al drain electrode, its structure expression is ITO/PMMA/Pentacene/C60/Al.
Described employing pentacene may further comprise the steps as the preparation of the C60 organic field effect tube of gate insulation layer passivation:
1) with indium oxide tin glass as the substrate gate electrode of holding concurrently, thickness is 0.7nm, square resistance is 10 Ω/, at the substrate surface that passes through deionized water, acetone and isopropyl alcohol ultrasonic cleaning successively, the method of utilizing spin coating to get rid of film prepares the PMMA gate insulation layer, the rotating speed of setting is 800 rev/mins of low speed, rotational time is 6 seconds, 1800 rev/mins at a high speed, rotational time is 10 seconds, the thickness of gate insulation layer film is 390nm, and then that spin coating is good substrate was placed on the following 120 ℃ of annealing in process of argon shield condition 2 hours;
2) adopt the thick pentacene passivation layer of vacuum vapour deposition deposition 2nm at above-mentioned PMMA gate insulation layer, vacuum degree is 2 * 10
-4Pa;
3) adopt vacuum vapour deposition deposition C60 active layer at above-mentioned gate insulation layer passivation layer, thickness is 40nm, and molecular weight is 720, and mobility is 10
-3Cm
2/ Vs, vacuum degree is 2 * 10
-4Pa;
4) adopting channel length is 80 μ m, and width is that the mask plate vacuum vapour deposition of 4mm deposits 150nm thick aluminium source electrode, aluminium drain electrode, makes pentacene as the C60 organic field effect tube of gate insulation layer passivation.
All tests of these structure C 60 organic field effect tubes are all carried out under room temperature and argon shield condition.Fig. 2 is not for adding the C of gate insulation layer passivation layer
60The organic field effect tube characteristic curve shows among the figure: when grid voltage was 60V, the device source leakage saturation current that does not add the gate insulation layer passivation layer was 1.18 * 10
-5A, field-effect mobility is 2.13 * 10
-1Cm
2/ Vs, on-off ratio are 10
3And after having used thickness as the passivation of 2nm gate insulation layer, output current is leaked in the saturated source of device obviously to be increased, and as shown in Figure 3, saturated source-drain current reaches 4.13 * 10
-4A, field-effect mobility reaches 1.01cm
2/ Vs, on-off ratio increases to 10
4Experimental result shows: with compare without the device of gate insulation layer passivation, field-effect mobility has improved 5 times, on-off ratio has increased an order of magnitude.
Claims (7)
1. one kind is adopted pentacene as the C60 organic field effect tube of gate insulation layer passivation, it is characterized in that: by tin indium oxide (ITO) glass substrate hold concurrently gate electrode, organic polymethyl methacrylate (PMMA) gate insulation layer, organic semiconductor pentacene (Pentacene) passivation layer, n type organic semiconductor C
60Active layer, Al source electrode and the stack of Al drain electrode are formed, and its structure expression is ITO/PMMA/Pentacene/C60/Al.
2. according to the C60 organic field effect tube of the described employing pentacene of claim 1 as the gate insulation layer passivation, it is characterized in that: the hold concurrently thickness of gate electrode of described tin indium oxide (ITO) glass substrate is 0.7nm, and square resistance is 10 Ω/.
3. according to the C60 organic field effect tube of the described employing pentacene of claim 1 as the gate insulation layer passivation, it is characterized in that: the thickness of the organic polymethyl methacrylate of described grid (PMMA) gate insulation layer is 390nm.
4. according to the C60 organic field effect tube of the described employing pentacene of claim 1 as the gate insulation layer passivation, it is characterized in that: the thickness of described organic semiconductor pentacene (Pentacene) passivation layer is 2nm.
5. according to the C60 organic field effect tube of the described employing pentacene of claim 1 as the gate insulation layer passivation, it is characterized in that: described n type organic semiconductor C
60The thickness of active layer is 40nm, C
60The molecular weight of material is 720, and mobility is 10
-3Cm
2/ Vs.
6. according to the C60 organic field effect tube of the described employing pentacene of claim 1 as the gate insulation layer passivation, it is characterized in that: the thickness of described Al source electrode, Al drain electrode is 150nm.
7. one kind is adopted pentacene as the preparation method of the C60 organic field effect tube of gate insulation layer passivation according to claim 1, it is characterized in that may further comprise the steps:
1) be that the indium oxide tin glass of 0.7nm is the gate electrode substrate of holding concurrently with thickness, its surface use respectively successively deionized water, acetone and isopropyl alcohol ultrasonic cleaning each once;
2) method of utilizing spin coating to get rid of film at above-mentioned gate electrode prepares thickness and is the 390nmPMMA gate insulation layer;
3) adopting the vacuum vapour deposition deposit thickness at above-mentioned gate insulation layer is the pentacene passivation layer of 2nm;
4) adopting the vacuum vapour deposition deposit thickness at above-mentioned passivation layer is the C60 active layer of 40nm;
5) the mask version vacuum vapour deposition deposit thickness of the long 80 μ m of employing raceway groove and wide 4mm is aluminium source electrode, the aluminium drain electrode of 150nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679940A (en) * | 2016-04-19 | 2016-06-15 | 中国科学院化学研究所 | Bipolar polymer field effect transistor and preparation method and application thereof |
| CN111554670A (en) * | 2020-05-18 | 2020-08-18 | 济南大学 | Flexible intelligent piezoelectric sensor based on coupling of pentacene organic field effect transistor and PVDF (polyvinylidene fluoride) nano-column |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222766A (en) * | 2011-05-12 | 2011-10-19 | 天津理工大学 | C60 organic field effect transistor with hydroxyquinoline aluminium as modification layer |
| CN102332534A (en) * | 2011-09-20 | 2012-01-25 | 电子科技大学 | N type organic thin-film transistor and manufacturing method thereof |
| US20120153285A1 (en) * | 2009-09-05 | 2012-06-21 | Merck Patent Gesellschaft Mit Beschrankter Haftung | Solution processable passivation layers for organic electronic devices |
-
2013
- 2013-03-20 CN CN2013100900814A patent/CN103187529A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120153285A1 (en) * | 2009-09-05 | 2012-06-21 | Merck Patent Gesellschaft Mit Beschrankter Haftung | Solution processable passivation layers for organic electronic devices |
| CN102222766A (en) * | 2011-05-12 | 2011-10-19 | 天津理工大学 | C60 organic field effect transistor with hydroxyquinoline aluminium as modification layer |
| CN102332534A (en) * | 2011-09-20 | 2012-01-25 | 电子科技大学 | N type organic thin-film transistor and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| JIAN-LIN ZHOU, JUN-SHENG YU, XIN-GE YU, ET AL.: "A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes", 《CHINESE PHYSICS B》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679940A (en) * | 2016-04-19 | 2016-06-15 | 中国科学院化学研究所 | Bipolar polymer field effect transistor and preparation method and application thereof |
| CN111554670A (en) * | 2020-05-18 | 2020-08-18 | 济南大学 | Flexible intelligent piezoelectric sensor based on coupling of pentacene organic field effect transistor and PVDF (polyvinylidene fluoride) nano-column |
| CN111554670B (en) * | 2020-05-18 | 2022-03-29 | 济南大学 | Flexible intelligent piezoelectric sensor based on coupling of pentacene organic field effect transistor and PVDF (polyvinylidene fluoride) nano-column |
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Application publication date: 20130703 |