CN101267021A - Organic bipolar film transistor and its making method - Google Patents
Organic bipolar film transistor and its making method Download PDFInfo
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- CN101267021A CN101267021A CNA200810096637XA CN200810096637A CN101267021A CN 101267021 A CN101267021 A CN 101267021A CN A200810096637X A CNA200810096637X A CN A200810096637XA CN 200810096637 A CN200810096637 A CN 200810096637A CN 101267021 A CN101267021 A CN 101267021A
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Abstract
The invention relates to an organic bipolar thin-film transistor and the making method, wherein the organic thin-film transistor comprises a gate electrode, a gate insulation layer, an N-type active layer, a P-type active layer a source electrode and a drain electrode, the organic bipolar thin-film transistor also comprises an organic modification insulation layer which is located on the surface of the gate insulation layer. The invention uses double-layer hetero-structure to make the organic bipolar thin-film transistor, and can reduce the recombination rate of electron or cavity in transmission, and the P-type active layer is made on the uppermost layer, avoiding electrical property of the N-type active layer being affected by water oxygen; In addition, an organic modification insulation layer is modified between the N-type active layer and gate insulation layer, the electron transmits easily in channel by choosing proper organic insulation layer, the electrical property of the N-type is improved greatly, Thus resolving the problem that the organic bipolar thin-film transistor only has P-type electrical property in atmosphere, and operating the organic bipolar thin-film transistor in air.
Description
[technical field]
The invention relates to a kind of thin-film transistor and manufacture method thereof, refer to a kind of organic bipolar film transistor and manufacture method thereof especially.
[background technology]
Traditional inorganic transistors is the field effect transistor of metal-oxide semiconductor (MOS) (MOS) formula, and its semi-conducting material is generally inorganic silicon.OTFT (Organic thin film transistors is called for short OTFT) claims plastic transistor again, adopts the inorganic semiconductor material among the organic semiconducting materials replacement MOS with the maximum different OTFT that are of MOS transistor.
Compare with inorganic transistors, OTFT has following major advantage: more, the renewal of the film technique of organic film, as Langmuir-Blodgett (LB) technology, numerator self-assembly technique, vacuum evaporation, inkjet printing etc., manufacture craft is simple, various, cost is low thereby make; Size of devices can be done forr a short time, and integrated level is higher, the raising that reduces to mean with the raising of integrated level reducing of operand power and arithmetic speed of molecular scale; With the transistor that organic polymer is made, its electrical property can obtain satisfied result by organic molecular structure being carried out suitable modification; Organic substance is easy to obtain, and the manufacture craft of organic field-effect tube is also more simple, its not strict controlled atmospher condition and harsh purity requirement, thereby can reduce device cost effectively; All the transistor by the what is called " organic entirely " of organic material preparation presents extraordinary pliability, and light weight, and is easy to carry.There are some researches show, device is carried out the distortion or the bending of appropriateness, the change that the electrical characteristics of device are not showing.Good pliability has further been widened the scope of application of organic transistor.
One of technology of OTFT most critical is an organic semiconducting materials.OTFT has special requirement to used organic semiconducting materials: high mobility, low intrinsic conductivity.High mobility is in order to guarantee the switching speed of device, and low intrinsic conductivity is in order to reduce the leakage current of device as much as possible, thereby improves the on-off ratio of device, increases the reliability of device.
According to the difference of transmission of materials carrier electric charge, can be divided into N type semiconductor material and P type semiconductor material.N type semiconductor is meant that carrier electric charge is negative, and promptly charge carrier is an electronics; P type semiconductor is meant carrier electric charge for just, and promptly charge carrier is the hole.
Yet, in the OTFT, the organic semiconducting materials great majority are the P material, at present higher with the carrier transport factor of P type organic transistor, n type material is less, and find N section bar that can be suitable and few, in addition, be vulnerable to the influence of aqueous vapor or oxygen when common N type organic semiconducting materials is operated at present in air with its carrier transport factor.Therefore, generally speaking, organic bipolar film transistor can't be operated in air, because be subjected to the influence of aqueous vapor and oxygen, electronics can't transmit in passage smoothly, causes having only the electrical of P type.Most at present organic bipolar film transistors all measure under vacuum or falling property gas, just can show electrically.This has limited particularly further developing of organic bipolar film transistor of OTFT.
[summary of the invention]
Main purpose of the present invention is to provide an organic bipolar film transistor and manufacture method thereof, particularly a kind of in atmosphere stability high and the electrical organic bipolar film transistor and the manufacture method thereof of N type arranged.
In order to achieve the above object, the invention provides a kind of organic bipolar film transistor and comprise a grid, a gate insulation layer, a N type active layer, a P type active layer, one source pole and a drain electrode, this organic bipolar film transistor comprises that also an organic decoration insulating barrier is arranged on this gate electrode insulation surface.
The present invention also provides a kind of manufacture method of organic bipolar film transistor, comprising:
Form a grid and a gate insulation layer, wherein this gate insulation layer covers on the grid;
On this gate electrode insulation surface, form an organic decoration insulating barrier;
On this organic decoration insulating barrier, form a N type active layer and a P type active layer; And
On active layer, form an one source pole and a drain electrode.
Compared to prior art, the present invention utilizes double-deck heterostructure (heterostructure) to make this organic bipolar film transistor, can reduce electronics or hole in transmission course by the chance of compound (recombination), and P type active layer is produced on the superiors, avoids the influence that electrically is subjected to water oxygen of N type active layer; Modify one deck organic decoration insulating barrier between this external N type active layer and the gate insulation layer, choosing suitable organic decoration insulating barrier can make electronics transmit easily in passage, promote the electrical of N type greatly, solve organic bipolar film transistor and in atmosphere, have only the electrical of P type, organic bipolar film transistor can be operated in air.
[description of drawings]
Fig. 1 is the structural representation of organic bipolar film transistor un-encapsulated of the present invention.
Fig. 2 A, Fig. 2 B are the ID-VD figure that the organic bipolar film transistor of the organic decoration insulating barrier that PMMA makes is not set on the gate insulator.
Fig. 2 C, Fig. 2 D are the ID-VD figure of the gate insulator organic bipolar film transistor of the present invention that is provided with the organic decoration insulating barrier that PMMA makes.
The field-effect mobility of the organic bipolar film transistor of the present invention of the organic decoration insulating barrier that Fig. 3 makes for tool PMMA is to the trend schematic diagram of time.
[embodiment]
Please refer to Fig. 1, be the structural representation of organic bipolar film transistor of the present invention (Bipolar Organic Thin FilmTransistors) un-encapsulated, organic bipolar film transistor of the present invention comprises a grid 1, a gate insulation layer 2, an organic decoration insulating barrier (organic insulator) 3, N type active layer 4, P type active layer 5, source electrode 6 and drains 7.N type active layer 4 utilizes different materials to make with P type active layer 5, wherein N type active layer 4 is to be made by N type organic semiconducting materials, for example formed by the PTCDI-C8 material, P type active layer 5 is to be made by P type organic semiconducting materials, is for example made by pentacene (pentacene) material.Organic bipolar film transistor of the present invention is before N type active layer 4 and P type active layer 5 film forming, earlier after rotary coating forms an organic decoration insulating barrier 3 on gate insulation layer 2 surfaces, utilize hot vapour deposition method that N type organic semiconducting materials (PTCDI-C8) and P type organic semiconducting materials (pentacene) film forming are formed this N type active layer 4 and P type active layer 5 again on this organic decoration insulating barrier 3, wherein P type active layer 5 covers on the N type active layer 4.
This organic decoration insulating barrier 3 can be as the dielectric layer of organic bipolar film transistor, and help the generation of electron channel, make organic bipolar film transistor of the present invention that the electrical of N type be arranged in atmospheric environment, thereby can improve the stability of organic bipolar film transistor of the present invention in atmospheric environment.The material of this organic decoration insulating barrier 3 can be selected from polymethyl methacrylate (poly (methyl methacrylate), PMMA), poly-αJia Jibenyixi (poly-α-methylstyrene, P α MS), polyvinyl alcohol (polyvinyl alcohol, PVA) or polyvinylphenol (poly (4-vinylphenol), PVP) a kind of in waiting.
The manufacture method of organic bipolar film transistor of the present invention may further comprise the steps:
Form a grid 1 and a gate insulation layer 2, wherein this gate insulation layer 2 covers on the grid 1;
Rotary coating forms an organic decoration insulating barrier 3 on gate insulation layer 2 surfaces;
Utilize hot vapour deposition method that N type organic semiconducting materials (PTCDI-C8) and P type organic semiconducting materials (pentacene) film forming are formed this N type active layer 4 and P type active layer 5 on this organic decoration insulating barrier 3, wherein P type active layer 5 covers on the N type active layer 4; And
On this P type active layer 5, form an one source pole 6 and a drain electrode 7.
Fig. 2 is ID-VD characteristic (p=30nm, the n=20nm) figure of existing organic bipolar film transistor and organic bipolar film transistor of the present invention.Fig. 2 A, Fig. 2 B are the ID-VD figure that does not use the existing organic bipolar film transistor of PMMA gate insulator, Fig. 2 C, Fig. 2 D are to use the organic bipolar film transistor of the present invention of PMMA gate insulator, as can be seen, the organic bipolar film transistor of the present invention that PMMA organic decoration insulating barrier 3 is arranged on the gate insulation layer 2 measures in air and has the electrical generation of N type really.
Mobility is the important parameter of organic bipolar film transistor: mobility (mobility) is big more, and actual operation speed is fast more.The field-effect mobility of the organic bipolar film transistor of the present invention of the organic decoration insulating barrier that Fig. 3 makes for tool PMMA is to the trend schematic diagram of time, the organic bipolar film transistor of the present invention of tool PMMA organic decoration insulating barrier is placed on a period of time in the air, go to test the stability (p=30nm, n=10nm) of organic bipolar film transistor of the present invention, as can be seen, though the characteristic of P type operator scheme is better, the N type stability of this organic bipolar film transistor even not worse than P type.
The present invention utilizes double-deck heterostructure (heterostructure) to make this organic bipolar film transistor, can reduce electronics or hole in transmission course by the chance of compound (recombination), and P type active layer 5 is produced on the superiors, avoids the influence that electrically is subjected to water oxygen of N type active layer 4; Modify one deck organic decoration insulating barrier 3 between this external N type active layer 4 and the gate insulation layer 2, choosing suitable organic decoration insulating barrier 3 can make electronics transmit easily in passage, promote the electrical of N type greatly, solve organic bipolar film transistor and in atmosphere, have only the electrical of P type, organic bipolar film transistor can be operated in air.That is to say that the organic decoration insulating barrier can be treated as the dielectric layer of organic bipolar film transistor, and help the generation of electron channel, make it that the electrical of N type be arranged; Utilize heterostructure (heterostructure) to make bipolar transistor, can reduce electronics or hole in transmission course by the chance of compound (recombination), the present invention has just finished the organic bipolar film transistor with stably operable in atmosphere in conjunction with these two kinds of technology.
Claims (11)
1. an organic bipolar film transistor comprises a grid, a gate insulation layer, a N type active layer, a P type active layer, one source pole and a drain electrode, and it is characterized in that: this organic bipolar film transistor comprises that also an organic decoration insulating barrier is arranged on this gate electrode insulation surface.
2. organic bipolar film transistor as claimed in claim 1 is characterized in that: this P type active layer is arranged on the N type active layer.
3. organic bipolar film transistor as claimed in claim 1 is characterized in that: this organic decoration insulating barrier is arranged between gate insulation layer and the N type active layer.
4. organic bipolar film transistor as claimed in claim 1 is characterized in that: the material of this organic decoration insulating barrier can be selected from a kind of in polymethyl methacrylate, poly-αJia Jibenyixi, polyvinyl alcohol or the polyvinylphenol etc.
5. the manufacture method of an organic bipolar film transistor, it is characterized in that: this manufacture method comprises:
Form a grid and a gate insulation layer, wherein this gate insulation layer covers on the grid;
On this gate electrode insulation surface, form an organic decoration insulating barrier;
On this organic decoration insulating barrier, form a N type active layer and a P type active layer; And
On active layer, form an one source pole and a drain electrode.
6. manufacture method as claimed in claim 5 is characterized in that: utilize the rotary coating mode to form this organic decoration insulating barrier on this gate electrode insulation surface.
7. manufacture method as claimed in claim 5 is characterized in that: utilize hot vapour deposition method to form this N type active layer and P type active layer on this organic decoration insulating barrier.
8. manufacture method as claimed in claim 5 is characterized in that: this P type active layer is arranged on the N type active layer.
9. manufacture method as claimed in claim 5 is characterized in that: this organic decoration insulating barrier is arranged between gate insulation layer and the active layer.
10. manufacture method as claimed in claim 5 is characterized in that: the material of this organic decoration insulating barrier can be selected from a kind of in polymethyl methacrylate, poly-αJia Jibenyixi, polyvinyl alcohol or the polyvinylphenol etc.
11. manufacture method as claimed in claim 5 is characterized in that: utilize heterostructure (heterostructure) to make this organic bipolar film transistor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810096637XA CN101267021A (en) | 2008-04-30 | 2008-04-30 | Organic bipolar film transistor and its making method |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA200810096637XA CN101267021A (en) | 2008-04-30 | 2008-04-30 | Organic bipolar film transistor and its making method |
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| CN101267021A true CN101267021A (en) | 2008-09-17 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178117A (en) * | 2011-12-20 | 2013-06-26 | 上海中科联和显示技术有限公司 | Bipolar type thin film transistor and production method thereof |
| CN103606558A (en) * | 2013-11-15 | 2014-02-26 | 中国科学院宁波材料技术与工程研究所 | A bipolarity film transistor |
| CN103762314A (en) * | 2013-12-31 | 2014-04-30 | 合肥工业大学 | Insulating layer decorating method for printing organic thin-film transistor in ink jet mode |
| US10014483B2 (en) | 2015-07-28 | 2018-07-03 | Boe Technology Group Co., Ltd. | Organic thin film transistor having patterned interface modification layer, display substrate and display apparatus having the same, and fabricating method thereof |
| CN111162167A (en) * | 2019-12-23 | 2020-05-15 | 南京大学 | Method and structure for improving working performance of pentacene organic field effect transistor |
-
2008
- 2008-04-30 CN CNA200810096637XA patent/CN101267021A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178117A (en) * | 2011-12-20 | 2013-06-26 | 上海中科联和显示技术有限公司 | Bipolar type thin film transistor and production method thereof |
| CN103178117B (en) * | 2011-12-20 | 2016-01-20 | 上海中科联和显示技术有限公司 | Bipolar film transistor and manufacture method thereof |
| CN103606558A (en) * | 2013-11-15 | 2014-02-26 | 中国科学院宁波材料技术与工程研究所 | A bipolarity film transistor |
| CN103606558B (en) * | 2013-11-15 | 2016-03-09 | 中国科学院宁波材料技术与工程研究所 | A kind of bipolar thin film transistor |
| CN103762314A (en) * | 2013-12-31 | 2014-04-30 | 合肥工业大学 | Insulating layer decorating method for printing organic thin-film transistor in ink jet mode |
| CN103762314B (en) * | 2013-12-31 | 2016-05-25 | 合肥工业大学 | For the insulating barrier method of modifying of inkjet printing OTFT |
| US10014483B2 (en) | 2015-07-28 | 2018-07-03 | Boe Technology Group Co., Ltd. | Organic thin film transistor having patterned interface modification layer, display substrate and display apparatus having the same, and fabricating method thereof |
| CN111162167A (en) * | 2019-12-23 | 2020-05-15 | 南京大学 | Method and structure for improving working performance of pentacene organic field effect transistor |
| CN111162167B (en) * | 2019-12-23 | 2023-11-07 | 南京大学 | Method and structure for improving working performance of pentacene organic field effect transistor |
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Open date: 20080917 |