CN204424320U - The symmetric double polar form organic field-effect tube of ladder planar heterojunction structure - Google Patents
The symmetric double polar form organic field-effect tube of ladder planar heterojunction structure Download PDFInfo
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- CN204424320U CN204424320U CN201420758700.2U CN201420758700U CN204424320U CN 204424320 U CN204424320 U CN 204424320U CN 201420758700 U CN201420758700 U CN 201420758700U CN 204424320 U CN204424320 U CN 204424320U
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- active layer
- effect tube
- heterojunction structure
- organic field
- planar heterojunction
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Abstract
The symmetric double polar form organic field-effect tube of the open ladder planar heterojunction structure of the present invention, belongs to organic electronic device arts.Present stage, the ambipolar organic field-effect tube symmetry of planar heterojunction structure was undesirable, far do not reach modern integrated circuits technological requirement.The present invention proposes the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure, and its active layer is ladder-type structure, is formed by substrate, gate electrode, gate dielectric layer, P type active layer, N-type active layer, source-drain electrode and is superposed successively.P type active layer and the N-type active layer channel length of the symmetric double polar form organic field-effect tube of this ladder planar heterojunction structure are different, channel length close to the upper strata active layer of source-drain electrode is less than the lower floor's active layer close to gate electrode, forge piece of step type structure is formed between active layer, realize source, drain electrode and effective the contacting of N-type with P type active layer, thus improve the symmetry of the ambipolar field effect transistor device I-V properties of planar heterojunction structure, material impact may be produced to modern integrated circuits technique.
Description
[technical field]
The invention belongs to organic electronic device arts, particularly a kind of symmetric double polar form field effect transistor.
[background technology]
Organic field-effect tube (OFET) has series of advantages: can be made into that broad area device, material are numerous is easy to adjusting function, preparation technology is simple, cost is low, good pliability etc.In recent years, the appearance of high-performance, multi-functional OFET, makes the research of OFET achieve breakthrough.The research of OFET lays the first stone for realizing full stress-strain circuit, therefore the research of ambipolar organic field-effect tube (AOFET) just seems more urgent urgent.There is electronics and hole channel in AOFET and single device, AOFET is mainly divided into monolayer bipolar shaped material, planar heterojunction (PHJ) and bulk heterojunction (BHJ) three kinds of structures simultaneously.Consider bipolarity and realize complexity and technique prepares complexity, PHJ structure has more advantage when preparing ambipolar OFET.Although the ambipolar organic field-effect tube (PAOFET) of planar heterojunction structure has the characteristic of N-type and P type field effect transistor at present, the symmetry of I-V characteristic is undesirable.The CMOS structure that modern integrated circuits technological requirement symmetry is good, and current PAOFET does not far reach the requirement of Application of integrated circuit.Source metal, contact problems between drain electrode and active layer affect one of major reason that PAOFET performance improves.Thus, suitable structure is selected to allow source, drain electrode and active layer form good contact thus the injection balancing hole and electronics seems very important.The PAOFET of current report is that multilayer active layer width is the same mostly, although this structure often can not ensure source, drain electrode contacts with double-deck active layer simultaneously, the ambipolar I-V characteristics symmetric of formation is not good.The present invention takes the structure of novel notch cuttype planar heterojunction to realize source, drain electrode fully effectively contacts with active layer, can manufacture the PAOFET that I-V characteristics symmetric is good, very great to the development meaning of organic OFET integrated circuit.
[summary of the invention]
The object of the invention is for above-mentioned Problems existing, the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure is provided.P type active layer and the N-type active layer channel length of the symmetric double polar form organic field-effect tube of this ladder planar heterojunction structure are different, channel length close to the upper strata active layer of source-drain electrode is less than the lower floor's active layer close to gate electrode, forge piece of step type structure is formed between active layer, to realize source, drain electrode and effective the contacting of N-type with P type active layer, thus improve the symmetry of the I-V characteristic of PAOFET device.
Technical scheme of the present invention:
The symmetric double polar form organic field-effect tube of ladder planar heterojunction structure, its active layer is ladder-type structure, formed by substrate, gate electrode, gate dielectric layer, P type active layer, N-type active layer, source-drain electrode and superposed successively, it is characterized in that: P type active layer is different with N-type active layer channel length, upper strata active layer channel length close to source-drain electrode is less than the lower floor's active layer close to gate electrode, forms forge piece of step type structure between active layer; Described substrate is tin indium oxide (ITO) glass and heavily doped silicon; Described gate electrode is Au and heavily doped silicon; Described gate dielectric layer is polyvinyl alcohol (PVA) and SiO
2; Described P type active layer is pentacene (Pentacene); Described N-type active layer is C60; Described source metal, leak electricity very Au.
The preparation method of the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure, step is as follows:
1) by substrate respectively with putting into glove box after acetone, ethanol, deionized water successively ultrasonic cleaning dry 1 hour, to clean up substrate surface;
2) prepare different gate electrode according to substrate used, Fig. 1 device prepares gate electrode with mask method in vacuum coating equipment, the evaporation rate of control Au and the vacuum degree of vacuum coating equipment chamber, and Fig. 2 device does not need to prepare gate electrode in addition;
3) prepare different gate dielectric layer according to substrate used, polymer P VA spin-coating method is coated on ito glass by Fig. 1 device, attentional manipulation rotating speed, and heavy doping silicon chip is placed in UV/ozone environment and generates SiO by Fig. 2 device
2gate dielectric layer;
4) on above-mentioned two kinds of substrates, certain thickness P type active layer and N-type active layer is evaporated successively respectively with mask method, the vacuum degree of attentional manipulation vacuum coating equipment chamber and the evaporation rate of active layer;
5) certain thickness source metal, drain electrode is evaporated, the vacuum degree of attentional manipulation vacuum coating equipment chamber and the evaporation rate of metal electrode with on the active layer of mask method respectively on two kinds of substrates.
Technical Analysis of the present invention:
The symmetric double polar form organic field-effect tube of this ladder planar heterojunction structure adopts hierarchic structure, P type active layer and N-type active layer channel length different, channel length close to the upper strata active layer of source-drain electrode is less than the lower floor's active layer close to gate electrode, increase active layer to contact with source, the effective of drain electrode, fully release the injection efficiency of charge carrier, realize source, drain electrode and effective the contacting of N-type with P type active layer, thus improve the symmetry of the I-V characteristic of PAOFET device.
Advantage of the present invention and beneficial effect:
The symmetric double polar form organic field-effect tube of this ladder planar heterojunction structure can obtain good ambipolar current transmission characteristic, presents good current symmetry; Fig. 1 device adopts the thick C60 of thick Pentacene and 30nm of 3nm to make electron mobility reach 3.50cm
2/ Vs, threshold voltage is 1.17V, and hole mobility is 0.25cm
2/ Vs, threshold voltage is-1.81V, and device performance significantly improves; Fig. 2 device adopts the thick C60 of thick Pentacene and 30nm of 3nm to make electron mobility reach 2.76cm
2/ Vs, threshold voltage is 1.86V, and hole mobility is 0.19cm
2/ Vs, threshold voltage is-2.60V, and device performance also significantly improves; The symmetric double polar form organic field-effect tube of this ladder planar heterojunction structure can be prepare low cost, high performance ambipolar organic field-effect tube provides a kind of method simply effective, easy to implement, easy to utilize.
[accompanying drawing explanation]
Fig. 1 is the symmetric double polar form organic field-effect tube structural representation of the ladder planar heterojunction structure of ito glass substrate.Wherein 1. ito glass; 2. Au gate electrode; 3. PVA gate medium; 4. P type active layer pentacene-layer; 5. N-type active layer C60 layer; 6. Au source electrode; 7. Au drain electrode.
Fig. 2 is the symmetric double polar form organic field-effect tube structural representation of the ladder planar heterojunction structure of heavy doping silicon chip substrate.Wherein 8. heavy doping silicon chip; 9. SiO2; 10. P type active layer pentacene-layer;
n-type active layer C60 layer;
au source electrode;
au drain electrode.
[embodiment]
Embodiment one
The symmetric double polar form organic field-effect tube of ladder planar heterojunction structure, composition graphs 1 illustrates present embodiment, and step is as follows:
1) ito glass is put into glove box dry 1 hour, to clean up ito glass surface with acetone, ethanol, deionized water successively ultrasonic cleaning respectively after 30 minutes;
2) on ito glass, the wide mask plate for 4mm of long 2mm is used, with
the thick Au of speed evaporation 30nm as gate electrode, vacuum degree is 1 × 10
-4pa;
3) on above-mentioned gate electrode substrate, utilize spin coating to get rid of film method spin coating one deck PVA, rotating speed is: low speed 410 revs/min, at a high speed 3000 revs/min, places 30 minutes after spin coating in the glove box of 120 DEG C;
4) on gate dielectric layer, wide with long 2mm is the mask plate of 4mm, with
the P type active layer Pentacene of speed evaporation thickness 3nm, then with
speed evaporation thickness be the N-type active layer C60 of 30nm, vacuum degree is 1 × 10
-4pa;
5) on C60 active layer, be the mask plate of 2000 μm with long 80 μm wide, with
the thick Au of speed evaporation 60nm as source, drain electrode, vacuum degree is 1 × 10
-4pa.
Embodiment two
The symmetric double polar form organic field-effect tube of ladder planar heterojunction structure, composition graphs 2 illustrates present embodiment, and step is as follows:
1) heavy doping silicon chip is put into glove box dry 1 hour, to clean up silicon chip surface with acetone, ethanol, deionized water successively ultrasonic cleaning respectively after 30 minutes;
2) above-mentioned silicon chip is placed in UV/ozone environment 120 minutes, obtains SiO
2layer;
3) on above-mentioned silicon chip, wide with long 2mm is the mask plate of 4mm, with
the P type active layer Pentacene of speed evaporation thickness 3nm, then with
speed evaporation thickness be the N-type active layer C60 of 30nm, vacuum degree is 1 × 10
-4pa;
4) on C60 active layer, be the mask plate of 2000 μm with long 80 μm wide, with
the thick Au of speed evaporation 60nm as source, drain electrode, vacuum degree is 1 × 10
-4pa.
The symmetric double polar form organic field-effect tube vacuum coating equipment used of this ladder planar heterojunction structure is JZZF & DZS-500, the electrology characteristic of device is measured by Agilent B1500A semiconductor device analyzer, and all measuring processes are all carried out in vacuum chamber.Experimental result shows: Fig. 1 and Fig. 2 device all shows good symmetric double polar form transmission characteristic and transfer characteristic, and Fig. 1 device electronic mobility and hole mobility reach 3.50cm respectively
2/ Vs and 0.25cm
2/ Vs, threshold voltage is respectively 1.17V and-1.81V, Fig. 2 device electronic mobility and hole mobility and reaches 2.76cm respectively
2/ Vs and 0.19cm
2/ Vs, threshold voltage is respectively 1.86V and-2.60V.Compared with the symmetric double polar form organic field-effect tube of non-notch cuttype planar heterojunction structure, two kinds of carrier mobilities of Fig. 1 device and Fig. 2 device have had and have significantly improved.
Claims (8)
1. the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure, formed by substrate, gate electrode, gate dielectric layer, P type active layer, N-type active layer, source-drain electrode and superposed successively, it is characterized in that: P type active layer is different with N-type active layer channel length, upper strata active layer channel length close to source-drain electrode is less than the lower floor's active layer close to gate electrode, forms forge piece of step type structure between active layer.
2. the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure according to claim 1, is characterized in that: P type active layer upper, N-type active layer under.
3. the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure according to claim 1, is characterized in that: described substrate is attached most importance to doped silicon wafer, ito glass or polyimides.
4. the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure according to claim 1, is characterized in that: described gate electrode is Au, Ag, Al, Cu or heavily doped silicon.
5. the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure according to claim 1, is characterized in that: described gate medium is polyvinyl alcohol (PVA), SiO
2, aluminium oxide (AlO
x) or polymethyl methacrylate (PMMA).
6. the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure according to claim 1, is characterized in that: described P type active layer is pentacene or phthalocyanines organic substance.
7. the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure according to claim 1, is characterized in that: described N-type active layer is fullerene (C60) or perfluor CuPc.
8. the symmetric double polar form organic field-effect tube of ladder planar heterojunction structure according to claim 1, is characterized in that: described source-drain electrode is Au, Ag or Cu.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226189A (en) * | 2014-12-04 | 2016-01-06 | 中国计量学院 | Symmetric double polar form organic field-effect tube of ladder planar heterojunction structure and preparation method thereof |
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2014
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226189A (en) * | 2014-12-04 | 2016-01-06 | 中国计量学院 | Symmetric double polar form organic field-effect tube of ladder planar heterojunction structure and preparation method thereof |
| CN105226189B (en) * | 2014-12-04 | 2017-12-19 | 中国计量学院 | Symmetrical ambipolar organic field-effect tube of ladder planar heterojunction structure and preparation method thereof |
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Granted publication date: 20150624 Effective date of abandoning: 20171219 |
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