CN110098329B - Organic thin film transistor and method for manufacturing the same - Google Patents
Organic thin film transistor and method for manufacturing the same Download PDFInfo
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- CN110098329B CN110098329B CN201910370968.6A CN201910370968A CN110098329B CN 110098329 B CN110098329 B CN 110098329B CN 201910370968 A CN201910370968 A CN 201910370968A CN 110098329 B CN110098329 B CN 110098329B
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Abstract
The invention relates to the technical field of organic electronic devices, in particular to an organic thin film transistor and a preparation method thereof. The organic thin film transistor includes: a substrate; the first grid is positioned on the surface of the substrate; the first grid insulating layer is positioned on the surface of the substrate and covers the first grid; the source electrode is positioned on the surface of the first grid insulating layer; the drain electrode is positioned on the surface of the first gate insulating layer; a doped organic semiconductor layer at least covering the source electrode, the drain electrode and a channel region between the source electrode and the drain electrode; the second gate insulating layer covers the surface of the doped organic semiconductor layer; and the second grid electrode is positioned on the surface of the second grid insulation layer. The invention can realize the regulation and control of the threshold voltage while ensuring that the organic thin film transistor has low contact resistance.
Description
Technical Field
The invention relates to the technical field of organic electronic devices, in particular to an organic thin film transistor and a preparation method thereof.
Background
An Organic thin-film transistor (OTFT) is a Field-effect transistor (FET) constructed based on an Organic semiconductor material. Compared with the traditional silicon-based transistor device, the organic thin film transistor has more excellent mechanical flexibility and is compatible with the low-temperature solution processing technology with lower cost, and is an important component and a basic device unit in the field of future flexible electronics. Although OTFTs have been studied in recent years, there are still deficiencies in device performance, one of which is critical: due to the fact that the electronic energy level of the organic semiconductor material is difficult to be efficiently matched with the work function of the source/drain electrode, obvious contact resistance is formed between the channel layer and the source/drain electrode of the device, the injection efficiency of current carriers is greatly limited, the effective mobility of the device is reduced, and serious challenges are brought to the size reduction of the device.
In the prior art, in order to effectively reduce the contact resistance between an organic semiconductor material and a source/drain electrode in an OTFT device, the method mainly proceeds from the following two aspects: on one hand, a technical scheme of heavily doping in a source/drain electrode region similar to that adopted by the traditional silicon-based technology can be adopted, however, the technical scheme is not only poor in applicability and limited in selection of materials of an organic semiconductor and a dopant which can be heavily doped, but also needs to add a layer of mask, and increases the preparation cost of the device; on the other hand, the entire organic semiconductor layer may be doped to reduce contact resistance with the source/drain electrodes, but the channel region between the source/drain electrodes is also simultaneously doped, causing problems of a severe threshold voltage shift, an increase in off-state current, a decrease in on-off ratio, and the like, which leads to a reduction in performance.
Therefore, how to effectively regulate and control the threshold voltage and improve the on-off ratio of the device while realizing ultra-low contact resistance by improving the structure of the organic thin film transistor so as to improve the mobility of the device and inhibit the short channel effect is a technical problem to be solved at present.
Disclosure of Invention
The invention provides an organic thin film transistor and a preparation method thereof, which are used for solving the problem that the existing organic thin film transistor can not realize controllable threshold voltage while reducing the contact resistance between an organic semiconductor material and a source electrode and a drain electrode so as to improve the performance of the organic thin film transistor.
In order to solve the above problems, the present invention provides an organic thin film transistor comprising:
a substrate;
the first grid is positioned on the surface of the substrate;
the first grid insulating layer is positioned on the surface of the substrate and covers the first grid;
the source electrode is positioned on the surface of the first grid insulating layer;
the drain electrode is positioned on the surface of the first gate insulating layer;
a doped organic semiconductor layer at least covering the source electrode, the drain electrode and a channel region between the source electrode and the drain electrode;
the second gate insulating layer covers the surface of the doped organic semiconductor layer;
the second grid electrode is positioned on the surface of the second grid insulation layer;
the doped organic semiconductor layer is an organic substrate layer with uniformly distributed dopants; or the doped organic semiconductor layer is an organic composite layer consisting of a dopant layer and an organic matrix layer which are mutually overlapped;
the threshold voltage of the organic thin film transistor can be regulated to 0V by the voltage applied to the first grid electrode.
Preferably, the doped organic semiconductor layer is a P-type doped organic semiconductor layer, an N-type doped organic semiconductor layer or a bipolar organic semiconductor layer.
Preferably, the dopant is a small organic molecule, an organic polymer, an inorganic salt, an organic salt, or a metal oxide.
Preferably, the organic thin film transistor has a contact resistance of less than 1k Ω · cm.
Preferably, the on-off ratio of the organic thin film transistor is more than 106。
In order to solve the above problems, the present invention further provides a method for manufacturing an organic thin film transistor, comprising the steps of:
providing a substrate;
forming a first grid on the surface of the substrate;
forming a first gate insulating layer on the surface of the substrate, wherein the first gate insulating layer covers the first gate;
forming a source electrode and a drain electrode on the surface of the first grid insulating layer;
forming a doped organic semiconductor layer on the surface of the first gate insulating layer, wherein the doped organic semiconductor layer covers the source electrode and the drain electrode; the doped organic semiconductor layer is an organic substrate layer with uniformly distributed dopants; or the doped organic semiconductor layer is an organic composite layer consisting of a dopant layer and an organic matrix layer which are mutually overlapped;
forming a second gate insulating layer on the surface of the doped organic semiconductor layer;
and forming a second grid electrode on the surface of the second grid insulation layer, wherein the threshold voltage of the organic thin film transistor can be regulated to 0V by the voltage applied to the first grid electrode.
Preferably, the doped organic semiconductor layer is a P-type doped organic semiconductor layer, an N-type doped organic semiconductor layer or a bipolar organic semiconductor layer.
Preferably, the dopant is a small organic molecule, an organic polymer, an inorganic salt, an organic salt, or a metal oxide.
Preferably, the step of forming a doped organic semiconductor layer on the surface of the first gate insulating layer includes:
forming a dopant layer overlying the source and drain and a channel region between the source and drain;
forming an organic matrix layer overlying the dopant layer.
Preferably, the step of forming a doped organic semiconductor layer on the surface of the first gate insulating layer includes:
and forming a doped organic semiconductor layer on the surface of the first gate insulating layer by adopting a solution coating process or a vacuum evaporation process.
The organic thin film transistor and the preparation method thereof provided by the invention combine the double-gate transistor technology and the doping technology, and the current carrier distribution of the channel region is adjusted and controlled by the aid of the other gate (namely the first gate), so that the problems of threshold voltage drift, off-state current rise and the like caused by the fact that the contact resistance of a device is reduced by the organic semiconductor doping technology in the organic thin film transistor in the prior art are solved, the organic thin film transistor is ensured to have low contact resistance, the negative effects of threshold voltage drift and on-off ratio reduction caused by doping can be eliminated by the aid of the other gate, the adjustment and control of the threshold voltage are realized, the circuit or the application requirements are matched, and the application field of the organic thin film transistor is expanded while the performance of the organic thin film transistor is improved. In addition, the organic thin film transistor provided by the invention not only can be compatible with a large-area and rapid printing or coating process, but also is expected to improve the mobility of the device and inhibit the short channel effect.
Drawings
FIG. 1 is a schematic structural diagram of an organic thin film transistor according to an embodiment of the present invention;
FIG. 2 is a graph showing the results of performance tests on organic thin film transistors according to an embodiment of the present invention;
fig. 3 is a flow chart of a method for fabricating an organic thin film transistor according to an embodiment of the present invention.
Detailed Description
The following describes in detail specific embodiments of an organic thin film transistor and a method for fabricating the same according to the present invention with reference to the accompanying drawings.
The present embodiment provides an organic thin film transistor, and fig. 1 is a schematic structural diagram of the organic thin film transistor according to the present embodiment. As shown in fig. 1, the present embodiment provides an organic thin film transistor including:
a substrate 10;
a first gate 11 located on the surface of the substrate 10;
a first gate insulating layer 12 located on the surface of the substrate 10 and covering the first gate 11;
a source electrode 14 positioned on the surface of the first gate insulating layer 12;
a drain electrode 15 positioned on the surface of the first gate insulating layer 12;
a doped organic semiconductor layer 13 covering at least the source electrode 14, the drain electrode 15 and a channel region between the source electrode 14 and the drain electrode 15;
the second gate insulating layer 16 covers the surface of the doped organic semiconductor layer 13;
the second grid electrode 17 is positioned on the surface of the second grid insulation layer 16;
the doped organic semiconductor layer 13 is an organic substrate layer with dopants uniformly distributed; or, the doped organic semiconductor layer 13 is an organic composite layer composed of a dopant layer and an organic matrix layer which are mutually overlapped;
the threshold voltage of the organic thin film transistor can be controlled to 0V by the voltage applied to the first gate electrode 11.
Specifically, the organic thin film transistor provided in this embodiment mode has a double gate structure, where: the first gate electrode 11, the first gate insulating layer 12, the source electrode 14, the drain electrode 15 and the doped organic semiconductor layer 13 together form a bottom-gate bottom-contact transistor, i.e. a first transistor; the second gate electrode 17, the second gate insulating layer 16, the doped organic semiconductor layer 13, the source electrode 14, and the drain electrode 15 together constitute a top-gate bottom-contact transistor, i.e., a second transistor. In the first transistor, the source electrode 14, the drain electrode 15 and the first gate electrode 11 are located on the same side (i.e. the same side gate electrode) of the doped organic semiconductor layer 13, so that the first transistor is used as a control device of the organic thin film transistor, and the threshold voltage of the organic thin film transistor can reach 0V by controlling the threshold voltage of the organic thin film transistor through the first gate electrode 11. In the second transistor, the source electrode 14, the drain electrode 15 and the second gate electrode 17 are located on opposite sides (i.e., opposite-side gate electrodes) of the doped organic semiconductor layer 13, so that the second transistor serves as an operating device of the organic thin film transistor, and the second gate electrode 17 serves as an operating gate electrode of the organic thin film transistor.
The doped organic semiconductor layer refers to a semiconductor layer including a doping element and a high molecular organic material. The doped organic semiconductor layer 13 is an organic substrate layer with dopants uniformly distributed; alternatively, the doped organic semiconductor layer 13 is an organic composite layer composed of a dopant layer and an organic matrix layer stacked on each other.
By arranging the doped organic semiconductor layer 13, a very low contact resistance, for example, a contact resistance of less than 1 · k Ω · cm, is achieved between the doped organic semiconductor layer 13 and the source electrode 14 and the drain electrode 15; meanwhile, the mobility of the device can be effectively improved, and the short channel effect can be inhibited.
The arrangement of the same-side gate in the first transistor enables the electric field applied by the first gate 11 to act only on the channel region between the source 14 and the drain 15, so as to realize the purposeAnd regulating and controlling the threshold voltage of the organic thin film transistor. Meanwhile, the source electrode 14, the drain electrode 15 and the first gate electrode 11 in the first transistor are located on the same side of the doped organic semiconductor layer 13, so that the source electrode 14 and the drain electrode 15 effectively shield the electric field effect from the first gate electrode 11 to the source region and the drain region in the doped organic semiconductor layer 13, thereby avoiding the influence on the low contact resistance between the doped organic semiconductor layer 13 and the source electrode 14 and the drain electrode 15, so that the organic thin film transistor has the characteristics of ultra-low contact resistance and controllable threshold voltage, and the on-off ratio of the organic thin film transistor device can be larger than 106. Wherein the source region is a region in the doped organic semiconductor layer 13 corresponding to the source electrode 14; the drain region is a region in the doped organic semiconductor layer 13 corresponding to the drain electrode 15.
The material of the substrate 10 may be an insulating substrate made of silicon or PET (Polyethylene terephthalate). The materials of the first gate 11, the second gate 17, the source 14 and the drain 15 may be all one or a combination of several of highly doped silicon, copper, aluminum, silver, gold, chromium and titanium.
In this embodiment, the type of the doping element in the doped organic semiconductor layer 13 can be selected by those skilled in the art according to actual needs. Preferably, the doped organic semiconductor layer 13 is a P-type doped organic semiconductor layer, an N-type doped organic semiconductor layer, or a bipolar organic semiconductor layer.
In one embodiment, the doped organic semiconductor layer 13 includes an organic matrix layer and the dopant can be a small organic molecule, an organic polymer, an inorganic salt, an organic salt, or a metal oxide. For example, the dopant may be: organic PEI, etc.; salts CsF, FeCl3TBAF, TBAOH, etc.; or the metal oxide Mn3O4、CoCp2And the like.
In another embodiment, the doped organic semiconductor layer comprises:
the dopant layer is covered on the surfaces of the source electrode and the drain electrode and a channel region between the source electrode and the drain electrode; an organic matrix layer covering the dopant layer.
The doped organic semiconductor layer may be composed of two layers of a dopant layer and an organic matrix layer stacked on each other in a direction perpendicular to the substrate. The dopant layer covers the surface of the source electrode, the surface of the drain electrode and the channel region between the source electrode and the drain electrode at the same time, so that the process requirement for patterning the dopant layer is eliminated, and the manufacturing process of the organic thin film transistor is simplified. Wherein the dopant layer refers to a layer formed by depositing a dopant material. In this case, as a material of the dopant layer, an organic material PTDPQ or the like, a salt BaCl, or the like can be used2、Ba(OH)2、NaHCO3Etc. or metal oxides V2O5、MoO3And the like.
More preferably, the material of the organic matrix layer is pentacene, fullerene derivatives, polythiophene derivatives or small-molecule thiophene derivatives. That is, the doping concentration is the same at each position in the doped organic semiconductor layer 13, so that the manufacturing process of the organic thin film transistor can be simplified, and the manufacturing cost can be reduced.
Fig. 2 is a graph showing the results of performance tests of the organic thin film transistor according to the embodiment of the present invention. In fig. 2, curve a represents a test result graph of a single-gate device having a doped organic semiconductor layer, curve B represents a test result graph of a dual-gate device having a doped organic semiconductor layer (i.e., an organic thin film transistor in the present embodiment), and the curve side represents a test result graph of a single-gate device having an undoped organic semiconductor layer. As can be seen from fig. 2, the organic semiconductor is doped, so that the carrier concentration of the device is obviously increased, the injection efficiency is improved, and thus a higher channel current is generated, and the threshold voltage of the device is regulated and controlled by another gate electrode (i.e., the first gate electrode), so that a high-performance OTFT device is realized. In FIG. 2, VGSRepresenting the voltage between the gate and the source of a transistor，VDSRepresenting the voltage between the source and drain of the transistor, IDRepresenting the drain current of the transistor.
Fig. 3 is a flowchart of a method for manufacturing an organic thin film transistor according to an embodiment of the present invention, and a structure of the organic thin film transistor manufactured according to the embodiment is shown in fig. 1. As shown in fig. 3, the method for manufacturing an organic thin film transistor according to this embodiment includes the following steps:
step S21, providing a substrate 10;
step S22, forming a first gate 11 on the surface of the substrate 10;
step S23, forming a first gate insulating layer 12 on the surface of the substrate 10, wherein the first gate insulating layer 12 covers the first gate 11;
step S24, forming a source electrode 14 and a drain electrode 15 on the surface of the first gate insulating layer 12;
step S25, forming a doped organic semiconductor layer 13 on the surface of the first gate insulating layer 12, wherein the doped organic semiconductor layer 13 covers the source electrode 14 and the drain electrode 15; the doped organic semiconductor layer 13 is an organic substrate layer with dopants uniformly distributed; or, the doped organic semiconductor layer 13 is an organic composite layer composed of a dopant layer and an organic matrix layer which are mutually overlapped;
step S26, forming a second gate insulating layer 16 on the surface of the doped organic semiconductor layer 13;
in step S27, a second gate electrode 17 is formed on the surface of the second gate insulating layer 16, and the threshold voltage of the organic thin film transistor can be adjusted to 0V by the voltage applied to the first gate electrode.
Preferably, the doped organic semiconductor layer 13 is a P-type doped organic semiconductor layer, an N-type doped organic semiconductor layer, or a bipolar organic semiconductor layer.
Preferably, the dopant is a small organic molecule, an organic polymer, an inorganic salt, an organic salt, or a metal oxide.
The method for doping the organic matrix layer by using the dopant can be spin coating, spray coating, blade coating, printing, solution process such as blending of the dopant and the organic matrix layer material, vacuum evaporation process or physical adsorption of dopant steam.
In another embodiment, the step of forming a doped organic semiconductor layer on the surface of the first gate insulating layer includes:
forming a dopant layer covering the source electrode 14 and the drain electrode 15 and a channel region between the source electrode 14 and the drain electrode 15;
forming an organic matrix layer overlying the dopant layer.
Preferably, the step of forming the doped organic semiconductor layer 13 on the surface of the first gate insulating layer 12 includes:
and forming a doped organic semiconductor layer 13 on the surface of the first gate insulating layer 12 by using a solution coating process or a vacuum evaporation process.
The organic thin film transistor and the method for manufacturing the same provided by the embodiment of the invention overcome the problems of threshold voltage drift, off-state current rise and the like caused by the fact that the contact resistance of a device is reduced by adopting a doping technology in the organic thin film transistor in the prior art, ensure that the organic thin film transistor has low contact resistance, and simultaneously realize the regulation and control of the threshold voltage to match the requirements of a circuit or application, so that the performance of the organic thin film transistor is improved, and meanwhile, the application field of the organic thin film transistor is expanded. In addition, the organic thin film transistor provided by the invention not only can be compatible with a large-area and rapid printing or coating process, but also is expected to improve the mobility of the device and inhibit the short channel effect.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. An organic thin film transistor, comprising:
a substrate;
the first grid is positioned on the surface of the substrate;
the first grid insulating layer is positioned on the surface of the substrate and covers the first grid;
the source electrode is positioned on the surface of the first grid insulating layer;
the drain electrode is positioned on the surface of the first gate insulating layer;
a doped organic semiconductor layer at least covering the source electrode, the drain electrode and a channel region between the source electrode and the drain electrode;
the second gate insulating layer covers the surface of the doped organic semiconductor layer;
the second grid electrode is positioned on the surface of the second grid insulation layer;
the doped organic semiconductor layer is an organic substrate layer with uniformly distributed dopants; or the doped organic semiconductor layer is an organic composite layer consisting of a dopant layer and an organic matrix layer which are mutually overlapped, and the dopant improves the carrier concentration of the organic semiconductor layer covering the source electrode and the drain electrode so that the contact resistance is less than 1k omega cm;
the threshold voltage of the organic thin film transistor can be regulated to 0V by the voltage applied to the first grid electrode, and the channel carrier concentration of the organic thin film transistor can be regulated by the voltage applied to the second grid electrode so that the switching ratio is more than 106。
2. The organic thin film transistor of claim 1, wherein the organic matrix layer is a P-type organic semiconductor layer, an N-type organic semiconductor layer, or a bipolar organic semiconductor.
3. The organic thin film transistor according to claim 1, wherein the dopant is a small organic molecule, an organic polymer, an inorganic salt, an organic salt, or a metal oxide.
4. A preparation method of an organic thin film transistor is characterized by comprising the following steps:
providing a substrate;
forming a first grid on the surface of the substrate;
forming a first gate insulating layer on the surface of the substrate, wherein the first gate insulating layer covers the first gate;
forming a source electrode and a drain electrode on the surface of the first grid insulating layer;
forming a doped organic semiconductor layer on the surface of the first gate insulating layer, wherein the doped organic semiconductor layer at least covers the source electrode, the drain electrode and a channel region between the source electrode and the drain electrode; the doped organic semiconductor layer is an organic substrate layer with uniformly distributed dopants; or the doped organic semiconductor layer is an organic composite layer consisting of a dopant layer and an organic matrix layer which are mutually overlapped;
forming a second gate insulating layer on the surface of the doped organic semiconductor layer;
forming a second grid electrode on the surface of the second grid electrode insulating layer, wherein the threshold voltage of the organic thin film transistor can be regulated to 0V by the voltage applied to the first grid electrode, the dopant increases the carrier concentration of the organic semiconductor layer covering the source electrode and the drain electrode to enable the contact resistance to be less than 1k omega cm, and the organic thin film transistor regulates the carrier concentration of a channel by the voltage applied to the second grid electrode to enable the on-off ratio to be more than 106。
5. The method of claim 4, wherein the doped organic semiconductor layer is a P-type doped organic semiconductor layer, an N-type doped organic semiconductor layer, or a bipolar organic semiconductor layer.
6. The method of claim 4, wherein the dopant is a small organic molecule, an organic polymer, an inorganic salt, an organic salt, or a metal oxide.
7. The method according to claim 4, wherein the step of forming a doped organic semiconductor layer on the surface of the first gate insulating layer comprises:
forming a dopant layer overlying the source and drain and a channel region between the source and drain;
forming an organic matrix layer overlying the dopant layer.
8. The method according to claim 4, wherein the step of forming a doped organic semiconductor layer on the surface of the first gate insulating layer comprises:
and forming a doped organic semiconductor layer on the surface of the first gate insulating layer by adopting a solution coating process or a vacuum evaporation process.
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| WO2011051234A1 (en) * | 2009-10-26 | 2011-05-05 | Imec | Method for fabricating organic devices |
| CN102544369A (en) * | 2011-12-28 | 2012-07-04 | 北京交通大学 | Organic thin film transistor with composite structure |
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