CN103762251B - A kind of bigrid photo tft, image element circuit and pel array - Google Patents
A kind of bigrid photo tft, image element circuit and pel array Download PDFInfo
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Abstract
The invention provides a kind of bigrid photo tft that may be used for indirect detection type digital X-ray detection instrument.In the pixel cell detected for indirect X ray, the thin-film transistor of optical detection device and signal-obtaining is integrated in a bigrid photo tft.Bigrid photo tft both can achieve switch and the signal amplification performance of thin-film transistor, also can realize the inducing function of phototransistor and the memory function of signal charge.This scheme has high s/n ratio, high-resolution, manufacture craft is simple, integrated level is high advantage, can make full use of elemental area, thus can realize highly sensitive detection.
Description
Technical field
The present invention relates to a kind of structure of bigrid photo tft, preparation technology and image element circuit.
Background technology
X-ray imaging is one of diagnostic techniques of the most generally applying of hospital.Picture Chest X-rays, mammary gland is saturating, and blood vessel instrument and stomach and intestine instrument etc. have all been widely used in medical practice, becomes the important tool helping diagnosis sufferer.In recent years, the development of flat panel display had driven X-ray plane imaging technique flourish for biomedical imaging, and it has formed the important branch of of biomedical imaging field.At present, digital flat panel x-ray imaging instrument puts goods on the market, and becomes the strong competitor of Traditional x-ray imaging technique.Its outstanding advantage is digitlization, high sensitivity and high-resolution etc.These advantages serve important function for the early stage Accurate Diagnosis helping doctor to carry out disease particularly cancer.
A digital X-ray plane imager mainly comprises X-ray tube, digital flat-panel detector, and Digital Image Processing computer.Wherein digital flat-panel detector is core.It not only determines the imaging capability of system, also account for the cost of more than 50%.
Digital flat-panel detector is made up of pel array and peripheral circuit, and wherein pixel is its elementary cell, and it can be subdivided into again detection sensor and signaling switch two large divisions.Wherein detection sensor part determines the performance of pixel and even whole array to a great extent, is part most crucial in digital flat-panel detector.
According to the principle of detection, the digital flat-panel detector for X-radial imaging can be divided into direct detection type and two kinds, indirect detection type.Direct detection type X-ray is directly converted to the signal of telecommunication to export; Indirect detection first X-ray is converted to visible light signal, then light signal changed into the signal of telecommunication.Wherein, indirect detection type is the main operation modes of the digital flat-panel detector employing of current X-radial imaging.The present invention is mainly for the pixel technique in indirect detection type X-ray digital flat-panel detector.
The detection pixel unit of current existing indirect detection type X-ray digital flat-panel detector can be divided into three types:
1) as Fig. 1, make sensing unit by photodiode and coordinate switching thin-film transistor (ThinFilmTransistor-TFT);
2) as Fig. 2, switching TFT is coordinated by the photoconductive sensing unit of metal-semiconductor-metal (MSM);
3) as Fig. 3, switching TFT is coordinated by photo tft.
In above-mentioned detection pixel unit, be responsible for the element of visible ray detection (as photodiode, MSM photoconduction or photo tft) be what to separate with the switching thin-film transistor of responsible signal-obtaining, cause the poor-performing of pixel, sensitivity is lower, complex manufacturing technology, integrated level is low.For this pixel cell of prior art, need to make improvements.
Summary of the invention
The invention reside in overcome prior art shortcoming in deficiency, provide the bigrid photo tft pixel technique that a kind of switch performance is strong, integrated level is high, highly sensitive.
The present invention is realized by following technical scheme: a kind of bigrid photo tft, comprising: substrate, dark grid, the first dielectric layer, channel layer, source electrode, drain electrode, the second dielectric layer and photogate.This dark grid is arranged on this substrate.This first dielectric layer to be arranged on this substrate and to cover this dark grid.This source electrode and this drain electrode are arranged on this first dielectric layer and also contact with the two ends of this first dielectric layer accordingly.This channel layer to be arranged on this first dielectric layer and to cover this source electrode and this drain electrode.This second dielectric layer is arranged on this channel layer.This photogate is arranged on this second dielectric layer.Wherein, this photogate is made by the transparent electrode material conducted electricity, and this dark grid is made by metal or metal alloy.Compared to prior art, the present invention proposes a kind of bigrid photo tft for photodetection circuit, its maximum innovation is integrated in a bigrid photo tft with signal-obtaining transistor by detection sensor unit.Both make use of the switch performance of thin-film transistor, and also utilized inducing function and the enlarging function of phototransistor, closing three is one.Adopt the sharpest edges of double-gate film phototransistor to be the space saving switching thin-film transistor, achieve larger pixel filling ratio, and then improve sensitivity.In addition, the preparation technology of device is fairly simple, and integrated ratio is easier to, and effectively reduces preparation cost.Image element circuit is simple, and a device just can complete from induction, signal storage, to the overall process that signal-obtaining exports.And, utilize the enlarging function of double-gate film transistor itself, low dosage, highly sensitive active pixel (ActivePixel) X-X-ray detection X can be realized.
Further, this substrate is that glass substrate or flexible base, board are as plastics or stainless sheet steel.
Further, this photogate comprises indium tin oxide, indium-zinc oxide, aluminium-doped zinc oxide or semitransparent thin film metal, and this dark grid comprises molybdenum, chromium or aluminium etc. or its alloy.By the optimal design to material, the optical coupled between this transparent conductive material and dielectric material can be reached, improve photoelectric conversion efficiency.
Further, this channel layer is made by amorphous silicon and is formed or adopt other semiconductor film material as oxide etc.
Further, this first dielectric layer and this second dielectric layer are made by silicon oxide film or silicon nitride film material and are formed.Also other thin film dielectric materials can be adopted as aluminium oxide, titanium oxide and hafnium oxide etc.
Further, the thickness range of this first dielectric layer and this second dielectric layer is that 10 nanometers are to 1 micron.The dielectric layer of this material and thickness, optically, it have higher light transmittance and and transparent electrode material between good optical coupled, in electricity, it will meet the requirement of pixel storage capacitor, meet the requirement of bottom switch thin-film transistor to switching speed, and the normal running of the abundant absorption met light and guarantee switching thin-film transistor.
Further, the thickness range of this channel layer is that 50 nanometers are to a micron.Need both to meet the absorption to light, also meet the requirement of electricity.
Further, also comprise the anti-reflection film be arranged in photogate, this anti-reflection film is single or multiple lift structure.Object reduces the light loss of light in transmitting procedure.
Another object of the present invention is to provide a kind of image element circuit and the pel array of applying above-mentioned bigrid photo tft.
A kind of image element circuit comprises an above-mentioned bigrid photo tft, resets end, reads end, offset side and data output end; This replacement end is electrically connected with the photogate of transistor, and this reading end is electrically connected with the dark grid of transistor, and this offset side is electrically connected with the drain electrode of transistor, and this data output end is electrically connected with the source electrode of transistor.Further, the drain electrode of this transistor and dark grid short circuit.A port can be saved, simplify wiring.
A kind of pel array, comprises multiple above-mentioned a kind of image element circuit, the corresponding pixel of transistor of each image element circuit; Wherein, the replacement end with a line image element circuit is electrically connected to each other; Reading end with a line image element circuit is electrically connected to each other; The data output end of same row image element circuit is electrically connected to each other; During scanning, read end and select to need the row of scanning element point, data output end to export in each row by the signal of pixel selected.
Core of the present invention is double-gate film phototransistor, and traditional maximum not being both of double-gate film transistor: 1) introduce a photogate; 2) thickness optimizing channel layer meets optoelectronic induction and switching function simultaneously; 3) device operation is simple, the main requirement adapting to optoelectronic induction.
Accompanying drawing explanation
Fig. 1 is the detection pixel unit circuit that photodiode coordinates TFT
Fig. 2 is the detection pixel unit circuit that photoconduction coordinates TFT
Fig. 3 is the detection pixel unit circuit that photo tft coordinates TFT
Fig. 4 is one of sectional structure chart of double-gate film phototransistor
Fig. 5 is the sectional structure chart two of double-gate film phototransistor
Fig. 6 is absorbed to improve thin channel layer by prolongation channel width and source electrode in double gate transistor
Fig. 7 is that the typical case of bigrid photo tft prepares processing procedure.
Fig. 8 is double gate transistor image element circuit
Fig. 9 is the sequential of image element circuit
Figure 10 is the bigrid image element circuit being reduced to three ports
Figure 11 is the representational 3X3 pel array based on bigrid photo tft
Figure 12 is the optics picture of amorphous silicon double-gate film phototransistor
Figure 13 is transfer characteristic curve and the output characteristic curve of amorphous silicon double-gate film phototransistor
Figure 14 is the output characteristic curve of amorphous silicon double-gate film phototransistor under different illumination intensity
Figure 15 is the signal response curve of amorphous silicon double-gate film phototransistor when light and shade alternately changes
Figure 16 is that amorphous silicon double-gate film phototransistor is to the signal response curve of intensity of illumination
Figure 17 is the indirect X-ray detector based on bigrid photo tft
Referring to drawings and the specific embodiments, the invention will be further described.
Embodiment
Refer to Fig. 4, it is one of sectional structure chart of a kind of bigrid photo tft of the present invention.Described bigrid photo tft comprises substrate 1, dark grid 2, first dielectric layer 3, source electrode 4, drain electrode 5, channel layer 6, second dielectric layer 7 and photogate 8.This substrate 1 can be glass substrate, plastic base or other substrates; In the present invention, glass substrate is adopted.This dark grid 2 is arranged on this substrate 1, and it is made by metal or metal alloy, molybdenum, chromium or aluminium etc. or its alloy.This first dielectric layer 3 to be arranged on this substrate 1 and to cover this dark grid 2.This source electrode 4 and this drain electrode 5 are arranged on this first dielectric layer 3 and also contact with the two ends of this first dielectric layer 3 accordingly; This channel layer 6 to be arranged on this first dielectric layer 3 and to cover this source electrode 4 and this drain electrode 5; In the present invention, this channel layer 6 is formed by amorphous silicon.This second dielectric layer 7 is arranged on this channel layer 6.This photogate 8 is arranged on this second dielectric layer 7, and it is made by the transparent electrode material conducted electricity, and comprises indium tin oxide, indium-zinc oxide, aluminum-doped zinc oxide films or semitransparent thin film metal.
The operation principle of bigrid photo tft is as follows: this bigrid photo tft is a four-terminal device, by photogate 8, and dark grid 2, source electrode 4 and drain electrode 5 composition.Be positioned at the photogate 8 at top, principal security luminous energy enters inductive layer smoothly.The thin-film transistor at top can regard Metal-oxide-semicondutor (MetalOxideSemiconductor-MOS) electric capacity as.Thin film transistor of bottom grid electrode mainly plays the effect of switch, for reading and the amplification of signal.Light is injected from transparent optical grid 8 top, absorbed by channel layer 6, form a large amount of charge inducing, photoelectron, under the effect of top light grid back bias voltage, is enriched in bottom, when bottom switch thin-film transistor is opened time, a large amount of photoelectrons just can export, and these photoelectrons can utilize the amplification of bottom thin film transistor, is amplified further, in other words, bottom thin film transistor is equivalent to an embedded internal amplifier.The thickness of raceway groove through Careful design, namely can meet the absorption to light, also meets the requirement of electricity.In order to reduce the light loss of light in transmitting procedure, can introduce antireflection anti-reflection film on photogate 8, increase the transmission of light, reduce the light loss because boundary reflection causes, antireflection anti-reflection film can be the design of individual layer or multilayer; Also can utilize and filtering is carried out to the light of some specific wavelengths realize for the transmission of the photon of one or more specific wavelength, and not allow the light transmission of other wavelength.The optical coupled design of this part also needs the optical characteristics of the X ray conversion screen material considering to be positioned at top, such as luminescence and refraction etc.
As a variant embodiment of the present invention, bigrid photo tft of the present invention photogate 8 can be arranged on substrate 1, as shown in Figure 5, wherein, this photogate 8 is arranged on this substrate 1 its cross-section structure; This first dielectric layer 3 to be arranged on this substrate 1 and to cover this photogate 8; This source electrode 4 and this drain electrode 5, be arranged on this first dielectric layer 3 and also contact with the two ends of this first dielectric layer 3 accordingly; This channel layer 6 is arranged on this first dielectric layer 3, and covers this source electrode 4 and this drain electrode 5; This second dielectric layer 7, this is arranged on this channel layer 6; This dark grid 2 is arranged on this second dielectric layer 7.Because photogate 8 is for induction light, in the present embodiment, substrate 1 must adopt the glass substrate 1 that light transmission is strong.The principle of the transistor of the present embodiment is identical with a upper embodiment, and light is injected from bottom glass substrate 1, through photogate 8, produces photoelectron after being absorbed by channel layer 6, utilizes the amplification of top transistor and switching function to realize the output of signal.Equally, in order to reduce light loss, the material of antireflection or index matching can be introduced between glass substrate 1 and photogate 8.
Except above two basic structures, in some cases, the thickness of channel layer 6 very thinly must could meet some and specifically apply, such photon just can not by fully effective absorption, in order to improve the absorption to photon, the method extending channel width and utilize metal-drain 5 to reflect can be adopted, as shown in Figure 6.
For the structure in embodiments of the invention one, Fig. 7 is the typical processes preparing bigrid photo tft.Being described below of processing step:
A (), as Fig. 7 a, transparent glass substrate 1 deposits dark grid 2 material, and thickness is 50 to 300nm; Dark grid 2 figure is defined by photoetching method; Dark grid 2 is formed by lithographic method.
(b) as Fig. 7 b, deposition of gate insulating layer material, thickness is 50 to 300nm.
(c) as Fig. 7 c, sedimentary origin, drain electrode material, thickness is 50 to 300nm; Source, drain electrode patterns is defined by photoetching method; Source, drain electrode is formed by lithographic method.
(d) as Fig. 7 d, the amorphous silicon hydride of dopant deposition, thickness is 30 to 100nm; By photoetching method definition ohmic contact layer pattern; Ohmic contact layer is formed by lithographic method.
(e) as Fig. 7 e, the amorphous silicon hydride of deposition intrinsic, thickness is 50 to 500nm; Silicon island is defined by photoetching method; Silicon island is formed by lithographic method.
F (), as Fig. 7 f, deposition of gate insulating layer material, thickness is 50 to 300nm.
G (), as Fig. 7 g, deposit photogate 8 material, thickness is 50 to 300nm; By photoetching method definition photogate 8 figure, form photogate 8 by lithographic method.
(h) as Fig. 7 h, deposited protective layer material, thickness is 50 to 300nm; Hole pattern is defined by photoetching method; By lithographic method perforate.
Refer to Fig. 8, it is the image element circuit figure applying a kind of bigrid photo tft of the present invention.This image element circuit has to reset holds A, reading end B, offset side C and data output end D.This replacement end A is electrically connected with the photogate 8 of transistor, and this reading end B is electrically connected with the dark grid 2 of transistor, and this offset side C is electrically connected with the drain electrode 5 of transistor, and this data output end D is electrically connected with the source electrode 4 of transistor.
Refer to Fig. 9, it is the time diagram of this image element circuit.The operation of pixel can be divided into three phases: S1: reset; S2: integrated; S3: read.At reset phase, photogate 8 adds malleation or zero-pressure, and top transistor is in forward bias, and dark grid 2 adds negative pressure, and bottom transistor is in reverse biased, and drain electrode 5 is in negative pressure state, and the electric charge of top mos capacitance is cleared.At this time, whole pixel is standby; Then at integration phase, photogate 8 adds negative pressure, and top transistor is in reverse biased, and dark grid 2 adds negative pressure, and bottom transistor is in reverse biased, and drain electrode 5 is still in negative pressure state, and top mos capacitance starts charging, and the quantity of electric charge produces with photoelectron and increases; Then be and then the reading stage, keep the negative pressure state of photogate 8, scotomete starts to apply malleation, and drain electrode 5 also starts to apply malleation, now, the photoelectron in mos capacitance starts under electric field action, outside output, completes the transfer of electric charge and the data reading operation of a pixel.
Can finding out that reading end B is consistent with resetting the action of holding C, in order to simplify the wiring of circuit, as shown in Figure 10, by the dark grid 2 of bottom with drain electrode 5 short circuit, can reduce by a port like this.
Indirect X ray detector is primarily of the detection array composition of the conversion screen and numerous photodetection pixel composition that X ray signal are converted to visible light signal.Wherein, a double-gate film transistor forms a pixel, and each single pixel works alone, and by photoelectric effect, light signal is converted to the signal of telecommunication.
Refer to Figure 11, it is the circuit diagram of a kind of pel array of the present invention.In the present embodiment, for 3x3 pel array.The corresponding pixel of transistor of each image element circuit; Wherein, the replacement end A with a line image element circuit is electrically connected to each other; Reading end B with a line image element circuit is electrically connected to each other; The data output end D of same row image element circuit is electrically connected to each other; During scanning, read end B and select to need the row of scanning element point, data output end D to export in each row by the signal of pixel selected.The array be made up of thousands of pixels coordinates conversion screen X-ray being converted to light signal just to constitute the digital flat panel X-ray detector of indirect conversion.According to the requirement of different digital X-radial imaging, the number of different row and columns can be designed with the demand of satisfied different Biologic Medical Image digital detector.
The PRELIMINARY RESULTS of the device detection of double-gate film phototransistor of the present invention is as follows:
Adopt the typical processes figure preparing bigrid photo tft shown in Fig. 7, adopt amorphous silicon to produce the double-gate film phototransistor of structure as shown in Figure 5 as channel layer 6.Figure 12 is its optical microscope photograph.Figure 13 is transfer characteristic curve and the output characteristic curve of amorphous silicon double-gate film phototransistor, wherein, and V
dGfor dark grid voltage, I
dfor drain electrode output current, V
pGfor photogate voltage, V
dfor drain voltage.Can be seen by Figure 13, its transfer characteristic and output characteristic follow the similar of general single grid thin-film transistor.
Under certain illumination condition, when photogate 8 is in reverse biased (V
pG=-1V), the signal of amorphous silicon double-gate film phototransistor strengthens obviously, as shown in figure 14, can find out that current-voltage transfer characteristic curve moves to back bias voltage direction along with the enhancing of illumination, demonstrate the threshold voltage of illumination effect top film transistor.So, in opening, the electric current of top film transistor export by with threshold voltage be changing into direct ratio, that is under light conditions, the signal that output current has been through thin-film transistor amplifies.
Figure 15 is top film transistor (V in the on state
dG=20V), the time response of photoelectric current.Under same illumination condition, photoelectric respone has repeatability.
Figure 16 is top film transistor (0.61Lux to 2.71Lux white light) under different illumination conditions, the situation of change of its photoelectric current.Can find out, photoelectric current and intensity of illumination are certain linear relationship.
Above test result preliminary proof double-gate film transistor is feasible in the application in photodetection field.Bigrid photo tft combines formation indirect X ray detector with X ray conversion screen 9, as shown in figure 17.
Compared to prior art, the present invention proposes a kind of bigrid photo tft for photodetection circuit, its maximum innovation is integrated in a bigrid photo tft with signal-obtaining transistor by detection sensor unit.Both make use of the switch performance of thin-film transistor, and also utilized inducing function and the memory function of phototransistor, unite two into one.The sharpest edges adopting double-gate film phototransistor save space, achieves larger pixel filling ratio, and then improve sensitivity and resolution.In addition, the preparation technology of device is fairly simple, and integrated ratio is easier to, and effectively reduces preparation cost.Image element circuit is simple, and a device just can complete from induction, signal storage, to the overall process that signal-obtaining exports.And, utilize the enlarging function of double-gate film transistor itself, low dosage, highly sensitive X-X-ray detection X can be realized.Can think that this design is the active pixel circuit that a single thin-film transistor is formed.
These are only preferred forms of the present invention, not in order to limit the present invention.All according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently, all should fall into protection scope of the present invention.
Claims (3)
1. an image element circuit, is characterized in that: this image element circuit comprises a bigrid photo tft, resets end, reads end, offset side and data output end;
Described bigrid photo tft comprises:
Substrate;
Dark grid, is arranged on the substrate; This dark grid is made by metal or metal alloy;
First dielectric layer, arranges on the substrate and covers this dark grid;
Source electrode and drain electrode, be arranged on this first dielectric layer and also contact with the two ends of this first dielectric layer accordingly;
Channel layer, to be arranged on this first dielectric layer and to cover this source electrode and this drain electrode;
Second dielectric layer, is arranged on this channel layer;
Photogate, is arranged on this second dielectric layer; This photogate is made by the transparent electrode material conducted electricity;
Or described bigrid photo tft comprises:
Substrate, this substrate is glass substrate;
Photogate, is arranged on this substrate;
First dielectric layer, to be arranged on this substrate and to cover this photogate;
Source electrode and drain electrode, be arranged on this first dielectric layer and also contact with the two ends of this first dielectric layer accordingly;
Channel layer, to be arranged on this first dielectric layer and to cover this source electrode and this drain electrode;
Second dielectric layer, is arranged on this channel layer;
Dark grid, is arranged on this second dielectric layer;
Wherein, this photogate is made by the transparent electrode material conducted electricity, and this dark grid is made by metal or metal alloy;
This replacement end is electrically connected with described photogate, and this reading end is electrically connected with described dark grid, and this offset side is electrically connected with described drain electrode, and this data output end is electrically connected with described source electrode; Described replacement end exports positive voltage, negative voltage, negative voltage in three stages respectively to described smooth Gate pole; Described offset side exports negative voltage, negative voltage, positive voltage in three stages respectively to described drain electrode; Described reading end exports negative voltage, negative voltage, positive voltage in three stages respectively to described dark Gate pole.
2. a kind of image element circuit according to claim 1, is characterized in that: described drain electrode and dark grid short circuit.
3. a pel array, is characterized in that: comprise multiple a kind of image element circuit as described in claim 2, the corresponding pixel of bigrid photo tft of each image element circuit; Wherein, the replacement end with a line image element circuit is electrically connected to each other; Reading end with a line image element circuit is electrically connected to each other; The data output end of same row image element circuit is electrically connected to each other; During scanning, read end and select to need the row of scanning element point, data output end to export in each row by the signal of pixel selected.
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Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111463310B (en) * | 2020-04-16 | 2022-02-15 | 复旦大学 | Single-transistor multi-dimensional optical information detector |
| US11349004B2 (en) * | 2020-04-28 | 2022-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside vias in semiconductor device |
| CN112599630B (en) * | 2020-12-07 | 2022-06-10 | Tcl华星光电技术有限公司 | Optical sensor and display device |
| CN114171542B (en) * | 2021-12-06 | 2023-08-22 | 深圳市华星光电半导体显示技术有限公司 | Display panel and mobile terminal |
| CN115172490A (en) * | 2022-06-30 | 2022-10-11 | 上海天马微电子有限公司 | Transistor and photoelectric sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071845A (en) * | 2006-05-10 | 2007-11-14 | 财团法人工业技术研究院 | Circuit structure of organic thin film transistor with dual-gate and its use |
| CN102203974A (en) * | 2008-10-29 | 2011-09-28 | 皇家飞利浦电子股份有限公司 | Dual gate field-effect transistor and method of producing a dual gate field-effect transistor |
| CN103411669A (en) * | 2013-05-15 | 2013-11-27 | 友达光电股份有限公司 | Light sensing circuit |
-
2014
- 2014-01-22 CN CN201410030072.0A patent/CN103762251B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071845A (en) * | 2006-05-10 | 2007-11-14 | 财团法人工业技术研究院 | Circuit structure of organic thin film transistor with dual-gate and its use |
| CN102203974A (en) * | 2008-10-29 | 2011-09-28 | 皇家飞利浦电子股份有限公司 | Dual gate field-effect transistor and method of producing a dual gate field-effect transistor |
| CN103411669A (en) * | 2013-05-15 | 2013-11-27 | 友达光电股份有限公司 | Light sensing circuit |
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