CN101393966A - Dual dielectric layer organic field-effect transistors and preparation thereof - Google Patents

Dual dielectric layer organic field-effect transistors and preparation thereof Download PDF

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CN101393966A
CN101393966A CNA2007101219745A CN200710121974A CN101393966A CN 101393966 A CN101393966 A CN 101393966A CN A2007101219745 A CNA2007101219745 A CN A2007101219745A CN 200710121974 A CN200710121974 A CN 200710121974A CN 101393966 A CN101393966 A CN 101393966A
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dielectric layer
gate electrode
substrate
adopts
layer
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商立伟
刘明
涂德钰
王丛舜
贾锐
龙世兵
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Abstract

The invention relates to the technical field of organic semiconductor devices, and discloses a double medium layer organic field-effect transistor. The transistor sequentially includes a substrate, a first medium layer, a second medium layer, an active layer and a source/drain electrode layer from bottom to top. In the transistor which adopts a common back gate electrode, the substrate is used as the common back gate electrode at the same time. In the transistor which adopts an independent gate electrode, the independent gate electrode is arranged between the substrate and the first medium layer, the first medium layer is an oxide medium layer with high dielectric constant, the second medium layer is an organic substance medium layer with low dielectric constant, the first medium layer is arranged between the gate electrode and the second medium layer, and the second medium layer is in direct contact with the active layer. The invention further discloses a method for manufacturing the double medium layer organic field-effect transistor. By utilizing the invention, the problem existing in the use of a single medium layer organic field-effect transistor can be solved, a device with high performance is obtained, and the practicality of an organic circuit is promoted.

Description

A kind of dual dielectric layer organic field-effect transistors and preparation method thereof
Technical field
The present invention relates to the organic semiconductor device technical field, relate in particular to a kind of dual dielectric layer organic field-effect transistors and preparation method thereof.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work.In daily life, people are increasing to the demand of low cost, flexibility, low weight, portable electronic product.Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on organic semiconducting materials that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.
Organic field-effect tube is organic microelectronic basic device cell, and high performance organic field-effect tube is the foundation stone that makes up the organic circuit that can obtain practical application.The performance of the organic field-effect tube of people's concern at present mainly comprises three aspects: mobility, threshold voltage and switch current ratio.Improve mobility and switch current ratio, reducing threshold voltage is the target that pursue always in this field.
The method that is used to improve these performances at present mainly contains: synthetic new high performance organic semiconducting materials; Select suitable dielectric material, form high-quality active layer and dielectric layer interface; Select the metal of high work function, form good Ohmic contact with organic semiconducting materials; Improve the material sedimentary condition, obtain high density, high semiconductive thin film orderly, big crystal grain; Between dielectric layer and active layer, introduce inducing layer, improve the crystalline state ratio of organic semiconductor thin-film etc.
Owing to can introduce big unit-area capacitance, improve stored charge density at the interface, adopt the dielectric layer of high-k to become the main means that reduce device threshold voltage.Yet because the restriction of thin film deposition means, the high dielectric constant material surface roughness of deposition is bigger, and higher polarity is arranged, and the interface quality that forms with organic semiconducting materials is not high, causes element leakage bigger.The simple method of high-k that adopts is demanded urgently improving.
The organic media material of low-k can deposit by liquid phase process, obtains high-quality surface property.Yet dielectric constant is lower, all than higher, is unfavorable for preparing the circuit of low-power consumption based on the device threshold voltage of this material.How to solve and use the problem that exists in the single-layer dielectric film organic field-effect tube, obtain high performance device, become a urgent problem.
Summary of the invention
(1) technical problem that will solve
In view of this, one object of the present invention is to provide a kind of dual dielectric layer organic field-effect transistors, uses the problem that exists in the single-layer dielectric film organic field-effect tube to solve, and obtains high performance device, promotes the practicability of organic circuit.
Another object of the present invention is to provide a kind of manufacture method of dual dielectric layer organic field-effect transistors, uses the problem that exists in the single-layer dielectric film organic field-effect tube to solve, and obtains high performance device, promotes the practicability of organic circuit.
(2) technical scheme
For reaching an above-mentioned purpose, the invention provides a kind of dual dielectric layer organic field-effect transistors, this transistor comprises substrate from the bottom to top successively, first dielectric layer, second dielectric layer, active layer and source-drain electrode layer, for this transistor that adopts public back-gate electrode, substrate is simultaneously as public back-gate electrode, for this transistor that adopts the independent gate electrode, between the substrate and first dielectric layer, also comprise an independent gate electrode, the medium of oxides layer that described first dielectric layer is a high-k, the organic substance dielectric layer that described second dielectric layer is a low-k, first dielectric layer is between the gate electrode and second dielectric layer, and second dielectric layer directly contacts with active layer.
In the such scheme, the oxide of the high-k of described formation first dielectric layer comprises: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Material; The organic substance of the low-k of described formation second dielectric layer comprises: PMMA, PI, HSQ or PVP material.
In the such scheme, the material of described formation active layer comprises: pentacene, copper phthalocyanine, P3HT or six thiophene; The material of described formation source-drain electrode layer comprises: metal material gold, silver, copper, aluminium, perhaps organic material PEODT/PSS.
In the such scheme, described substrate adopts silicon chip, glass or plastics; For this transistor that adopts public back-gate electrode, adopt the highly doped silicon chip of conduction simultaneously as the substrate of public back-gate electrode; For this transistor that adopts the independent gate electrode, the independent gate electrode between the substrate and first dielectric layer adopts metal material gold, silver, copper, aluminium, perhaps organic material PEODT/PSS.
In the such scheme, described field effect transistor adopts apical grafting touch structure.
For reaching above-mentioned another purpose, the invention provides a kind of manufacture method of dual dielectric layer organic field-effect transistors, this method comprises:
A, on substrate the deposition first dielectric layer;
B, on first dielectric layer deposition second dielectric layer;
C, at the second cvd dielectric layer active layer;
D, on active layer, prepare source-drain electrode, finish the making of entire device.
In the such scheme, for this transistor that adopts public back-gate electrode, described steps A comprises: on the substrate as public back-gate electrode, adopt electron beam evaporation or magnetically controlled sputter method deposition oxide.
In the such scheme, described substrate as public back-gate electrode adopts the highly doped silicon chip that conducts electricity, and the oxide of described deposition comprises: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Material.
In the such scheme, for this transistor that adopts the independent gate electrode, described steps A comprises: adopt chemical wet etching, metal-stripping on substrate, shelter deposition Shadow Mask or printing technology and prepare the independent gate electrode, adopt electron beam evaporation or magnetically controlled sputter method deposition oxide on the substrate that has prepared the independent gate electrode then.
In the such scheme, described substrate adopts silicon chip, glass or plastics; Described independent gate electrode adopts metal material gold, silver, copper, aluminium, perhaps organic material PEODT/PSS; The oxide of described deposition comprises: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Material.
In the such scheme, deposition second dielectric layer employing spin coating spin or printing technology realization on first dielectric layer described in the step B; Adopting spin coating spin, vacuum evaporation or printing technology to realize at the second cvd dielectric layer active layer described in the step C; On active layer, prepare the source-drain electrode employing described in the step D and shelter deposition Shadow Mask or printing technology realization.
In the such scheme, second dielectric layer of described deposition comprises organic substance material PMMA, PI, and HSQ and PVP, the active layer material of described deposition comprise pentacene, copper phthalocyanine, P3HT or six thiophene; The source-drain electrode layer material of described deposition comprises metal material gold, silver, copper, aluminium, perhaps organic material PEODT/PSS.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
This dual dielectric layer organic field-effect transistors provided by the invention and preparation method thereof, owing to introduced the medium of oxides of high-k, so can reduce the threshold voltage and the operating voltage of organic field-effect tube significantly.Further, by adopt liquid phase process deposition organic dielectric layer at the medium of oxides laminar surface, greatly reduce the roughness of medium of oxides laminar surface.Improved the interface quality between dielectric layer and the active layer so on the one hand, improved active layer growth for Thin Film environment on the other hand, made it can grow up to the crystalline film of high density, high orderly, big crystallite dimension.Therefore, the performance of device has obtained further improvement.Combine the advantage of high dielectric constant oxide dielectric layer and low-k organic substance dielectric layer, the organic field-effect tube of dual dielectric layer structure can obtain the threshold voltage far below 10V, and higher mobility and switch current ratio.And then, the invention solves and use the problem that exists in the single-layer dielectric film organic field-effect tube, obtained high performance device, promoted the practicability of organic circuit.
Description of drawings
Fig. 1 is the structural representation of the dual dielectric layer organic field-effect pipe of the public back-gate electrode of employing provided by the invention;
Fig. 2 is the preparation flow figure of the dual dielectric layer organic field-effect pipe of the public back-gate electrode of employing provided by the invention; Wherein,
Fig. 2-1 is the schematic diagram of growth first dielectric layer on substrate;
Fig. 2-2 is the schematic diagram of growth regulation second medium layer on first dielectric layer;
Fig. 2-3 is the schematic diagram of deposition active layer on dielectric layer;
Fig. 2-4 is the schematic diagram of sedimentary origin drain electrode layer on active layer;
Fig. 3 is the structural representation of the dual dielectric layer organic field-effect pipe of employing independent gate electrode provided by the invention;
Fig. 4 is the preparation flow figure of the dual dielectric layer organic field-effect pipe of employing independent gate electrode provided by the invention; Wherein,
Fig. 4-1 is the schematic diagram of preparation independent gate electrode on substrate;
Fig. 4-2 is the schematic diagram of growth first dielectric layer on gate electrode;
Fig. 4-3 is the schematic diagram of growth regulation second medium layer on first dielectric layer;
Fig. 4-4 is the schematic diagram of deposition active layer on dielectric layer;
Fig. 4-5 is the schematic diagram of sedimentary origin drain electrode layer on active layer.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
This dual dielectric layer organic field-effect transistors provided by the invention can adopt two kinds of gate electrode structures, and a kind of is public back-gate electrode, and another kind is the independent gate electrode.Wherein, when adopting public back-gate electrode, substrate is both as gate electrode, again as substrate.
As shown in Figure 1, Fig. 1 is the structural representation of the dual dielectric layer organic field-effect pipe of the public back-gate electrode of employing provided by the invention, and this structure comprises: substrate (gate electrode), first dielectric layer, second dielectric layer, active layer and source, drain electrode layer.First dielectric layer is between the gate electrode and second dielectric layer; Second dielectric layer directly contacts with active layer.Described field effect transistor adopts apical grafting touch structure.
Described substrate is an electric conducting material, serves as public back-gate electrode simultaneously; Material commonly used has highly doped silicon chip.Described first dielectric layer is the oxide of high-k, comprising: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Deng material.The organic substance dielectric layer that described second dielectric layer is a low-k comprises PMMA, PI, materials such as HSQ or PVP.Described active layer material comprises: materials such as pentacene, copper phthalocyanine, P3HT or six thiophene.Described source-drain electrode layer material comprises metal materials such as gold, silver, copper, aluminium, perhaps organic material such as PEODT/PSS.
Based on the structural representation of the dual dielectric layer organic field-effect pipe of the described employing back-gate electrode of Fig. 1, Fig. 2 shows preparation provided by the invention and adopts the dual dielectric layer organic field-effect control of back-gate electrode to be equipped with flow chart, and this method may further comprise the steps:
Step 201 goes up deposition first dielectric layer at substrate (being public back-gate electrode);
As described in Fig. 2-1, in this step, the described first cvd dielectric layer method comprises: electron beam evaporation oxide, magnetron sputtering oxide, and with carrying out thermal oxidation etc. again behind above-mentioned two kinds of method plated metals.Material commonly used is the oxide of high-k, comprising: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Deng material.
Step 202, deposition second dielectric layer on first dielectric layer;
Shown in Fig. 2-2, in this step, the deposition process of described second dielectric layer comprises: spin coating (spin) and printing etc.Common used material is the organic substance dielectric layer of low-k, comprises PMMA, PI, materials such as HSQ or PVP.
Step 203 deposits active layer on second dielectric layer;
Shown in Fig. 2-3, in this step, the deposition process of described active layer comprises: spin coating (spin), vacuum evaporation, printing etc.Active layer material commonly used comprises: materials such as pentacene, copper phthalocyanine, P3HT or six thiophene.
Step 204 prepares source-drain electrode on active layer, finish the making of entire device.
Shown in Fig. 2-4, in this step, the preparation method of described source-drain electrode comprises: ShadowMask shelters deposition and printing etc.Source-drain electrode material commonly used comprises metal materials such as gold, silver, copper, aluminium, perhaps organic conductor such as PEODT/PSS.
As shown in Figure 3, Fig. 3 is the structural representation of the dual dielectric layer organic field-effect pipe of employing independent gate electrode provided by the invention, and this structure comprises: substrate, gate electrode, first dielectric layer, second dielectric layer, active layer and source, drain electrode layer.First dielectric layer is between the gate electrode and second dielectric layer; Second dielectric layer directly contacts with active layer.Described field effect transistor adopts apical grafting touch structure.
Described substrate is a non-conducting material, and material commonly used has glass, plastics etc.Described independently gate electrode adopts organic materials such as metal materials such as gold, silver, copper, aluminium or PEODT/PSS usually.Described first dielectric layer is the oxide of high-k, comprising: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Deng material.The organic substance dielectric layer that described second dielectric layer is a low-k comprises PMMA, PI, materials such as HSQ or PVP.Described active layer material comprises: materials such as pentacene, copper phthalocyanine, P3HT or six thiophene.Described source-drain electrode layer material comprises metal materials such as gold, silver, copper, aluminium, perhaps organic material such as PEODT/PSS.
Based on the structural representation of the dual dielectric layer organic field-effect pipe of the described employing independent gate of Fig. 3 electrode, Fig. 4 shows preparation provided by the invention and adopts the control of independent gate electrode dual dielectric layer organic field-effect to be equipped with flow chart, and this method may further comprise the steps:
Step 401 prepares gate electrode on substrate;
Shown in Fig. 4-1, in this step, the preparation method of independent gate electrode comprises: chemical wet etching, metal-stripping, Shadow Mask shelter deposition and technology such as printing, and common used material comprises organic conductors such as metal material such as gold, silver, copper, aluminium or PEODT/PSS.
Step 402, deposition first dielectric layer on gate electrode;
Shown in Fig. 4-2, in this step, the described first cvd dielectric layer method comprises: electron beam evaporation oxide, magnetron sputtering oxide, and with carrying out thermal oxidation etc. again behind above-mentioned two kinds of method plated metals.Material commonly used is the oxide of high-k, comprising: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Deng material.
Step 403, deposition second dielectric layer on first dielectric layer;
Shown in Fig. 4-3, in this step, the deposition process of described second dielectric layer comprises: spin coating (spin) and printing etc.Common used material is the organic substance dielectric layer of low-k, comprises PMMA, PI, materials such as HSQ or PVP.
Step 404 deposits active layer on dielectric layer;
Shown in Fig. 4-4, in this step, the deposition process of described active layer comprises: spin coating (spin), vacuum evaporation, printing etc.Material commonly used comprises: materials such as pentacene, copper phthalocyanine, P3HT or six thiophene.
Step 405 prepares source-drain electrode on active layer, finish the making of entire device.
Shown in Fig. 4-5, in this step, the preparation method of described source-drain electrode comprises: ShadowMask shelters deposition and printing etc.Material commonly used comprises metal materials such as gold, silver, copper, aluminium, perhaps organic conductor such as PEODT/PSS.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (12)

1, a kind of dual dielectric layer organic field-effect transistors, this transistor comprises substrate, first dielectric layer, second dielectric layer, active layer and source-drain electrode layer from the bottom to top successively, for this transistor that adopts public back-gate electrode, substrate is simultaneously as public back-gate electrode, for this transistor that adopts the independent gate electrode, between the substrate and first dielectric layer, also comprise an independent gate electrode, it is characterized in that
The medium of oxides layer that described first dielectric layer is a high-k, the organic substance dielectric layer that described second dielectric layer is a low-k, first dielectric layer is between the gate electrode and second dielectric layer, and second dielectric layer directly contacts with active layer.
2, dual dielectric layer organic field-effect transistors according to claim 1 is characterized in that,
The oxide of the high-k of described formation first dielectric layer comprises: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Material;
The organic substance of the low-k of described formation second dielectric layer comprises: PMMA, PI, HSQ or PVP material.
3, dual dielectric layer organic field-effect transistors according to claim 1 is characterized in that,
The material of described formation active layer comprises: pentacene, copper phthalocyanine, P3HT or six thiophene;
The material of described formation source-drain electrode layer comprises: metal material gold, silver, copper, aluminium, perhaps organic material PEODT/PSS.
4, dual dielectric layer organic field-effect transistors according to claim 1 is characterized in that,
Described substrate adopts silicon chip, glass or plastics;
For this transistor that adopts public back-gate electrode, adopt the highly doped silicon chip of conduction simultaneously as the substrate of public back-gate electrode;
For this transistor that adopts the independent gate electrode, the independent gate electrode between the substrate and first dielectric layer adopts metal material gold, silver, copper, aluminium, perhaps organic material PEODT/PSS.
5, dual dielectric layer organic field-effect transistors according to claim 1 is characterized in that, described field effect transistor adopts apical grafting touch structure.
6, a kind of manufacture method of dual dielectric layer organic field-effect transistors is characterized in that, this method comprises:
A, on substrate the deposition first dielectric layer;
B, on first dielectric layer deposition second dielectric layer;
C, at the second cvd dielectric layer active layer;
D, on active layer, prepare source-drain electrode, finish the making of entire device.
7, the manufacture method of dual dielectric layer organic field-effect transistors according to claim 6 is characterized in that, for this transistor that adopts public back-gate electrode, described steps A comprises:
On substrate, adopt electron beam evaporation or magnetically controlled sputter method deposition oxide as public back-gate electrode.
8, the manufacture method of dual dielectric layer organic field-effect transistors according to claim 7 is characterized in that, described substrate as public back-gate electrode adopts the highly doped silicon chip that conducts electricity, and the oxide of described deposition comprises: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Material.
9, the manufacture method of dual dielectric layer organic field-effect transistors according to claim 6 is characterized in that, for this transistor that adopts the independent gate electrode, described steps A comprises:
On substrate, adopt chemical wet etching, metal-stripping, shelter deposition Shadow Mask or printing technology and prepare the independent gate electrode, adopt electron beam evaporation or magnetically controlled sputter method deposition oxide on the substrate that has prepared the independent gate electrode then.
10, the manufacture method of dual dielectric layer organic field-effect transistors according to claim 9 is characterized in that, described substrate adopts silicon chip, glass or plastics; Described independent gate electrode adopts metal material gold, silver, copper, aluminium, perhaps organic material PEODT/PSS; The oxide of described deposition comprises: HfO 2, ZrO 2, Ta 2O 5, Al 2O 3Or TiO 2Material.
11, the manufacture method of dual dielectric layer organic field-effect transistors according to claim 6 is characterized in that,
Deposition second dielectric layer employing spin coating spin or printing technology realization on first dielectric layer described in the step B;
Adopting spin coating spin, vacuum evaporation or printing technology to realize at the second cvd dielectric layer active layer described in the step C;
On active layer, prepare the source-drain electrode employing described in the step D and shelter deposition Shadow Mask or printing technology realization.
12, the manufacture method of dual dielectric layer organic field-effect transistors according to claim 11, it is characterized in that second dielectric layer of described deposition comprises organic substance material PMMA, PI, HSQ and PVP, the active layer material of described deposition comprise pentacene, copper phthalocyanine, P3HT or six thiophene; The source-drain electrode layer material of described deposition comprises metal material gold, silver, copper, aluminium, perhaps organic material PEODT/PSS.
CNA2007101219745A 2007-09-19 2007-09-19 Dual dielectric layer organic field-effect transistors and preparation thereof Pending CN101393966A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102655216A (en) * 2011-03-02 2012-09-05 中国科学院微电子研究所 Organic field-effect-transistor structure and preparation method thereof
CN104821373A (en) * 2015-04-01 2015-08-05 南京邮电大学 High-performance organic field effect transistor with double-layer modification, and modification method thereof
US10026911B2 (en) 2016-01-15 2018-07-17 Corning Incorporated Structure for transistor switching speed improvement utilizing polar elastomers
CN108615770A (en) * 2018-03-19 2018-10-02 中国科学院微电子研究所 Field-effect transistor and detecting circuit
CN109244239A (en) * 2018-07-18 2019-01-18 华南师范大学 A kind of zirconium doping Organic Thin Film Transistors and preparation method thereof
CN113299831A (en) * 2021-05-21 2021-08-24 西安电子科技大学 Low-power consumption flexible thin film transistor based on three layers of insulating media and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102655216A (en) * 2011-03-02 2012-09-05 中国科学院微电子研究所 Organic field-effect-transistor structure and preparation method thereof
CN104821373A (en) * 2015-04-01 2015-08-05 南京邮电大学 High-performance organic field effect transistor with double-layer modification, and modification method thereof
US10026911B2 (en) 2016-01-15 2018-07-17 Corning Incorporated Structure for transistor switching speed improvement utilizing polar elastomers
CN108615770A (en) * 2018-03-19 2018-10-02 中国科学院微电子研究所 Field-effect transistor and detecting circuit
CN108615770B (en) * 2018-03-19 2021-09-21 中国科学院微电子研究所 Field effect transistor and detection circuit
CN109244239A (en) * 2018-07-18 2019-01-18 华南师范大学 A kind of zirconium doping Organic Thin Film Transistors and preparation method thereof
CN113299831A (en) * 2021-05-21 2021-08-24 西安电子科技大学 Low-power consumption flexible thin film transistor based on three layers of insulating media and manufacturing method thereof

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