CN105633170A - Metal oxide thin film transistor and preparation method therefor, array substrate and display apparatus - Google Patents
Metal oxide thin film transistor and preparation method therefor, array substrate and display apparatus Download PDFInfo
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- CN105633170A CN105633170A CN201610097577.8A CN201610097577A CN105633170A CN 105633170 A CN105633170 A CN 105633170A CN 201610097577 A CN201610097577 A CN 201610097577A CN 105633170 A CN105633170 A CN 105633170A
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- active layer
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- metal oxide
- oxide thin
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- 239000010409 thin film Substances 0.000 title claims abstract description 109
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 78
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 title abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 58
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 8
- 239000011777 magnesium Substances 0.000 claims abstract description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 6
- 239000011575 calcium Substances 0.000 claims abstract description 6
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 6
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 6
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 6
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 140
- 239000011241 protective layer Substances 0.000 claims description 56
- 238000005530 etching Methods 0.000 claims description 39
- 239000007788 liquid Substances 0.000 claims description 21
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229960000583 acetic acid Drugs 0.000 claims description 6
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 5
- 235000019253 formic acid Nutrition 0.000 claims description 5
- 239000012362 glacial acetic acid Substances 0.000 claims description 5
- 235000006408 oxalic acid Nutrition 0.000 claims description 5
- 238000004549 pulsed laser deposition Methods 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 17
- 238000001259 photo etching Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 238000001755 magnetron sputter deposition Methods 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 238000003475 lamination Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13069—Thin film transistor [TFT]
Abstract
A metal oxide thin film transistor and a preparation method therefor, an array substrate and a display apparatus are disclosed. An active layer protection layer for separating an active layer from source and drain electrodes is arranged in the thin film transistor; the active layer protection layer is an (MO)x(SnO2)y thin film, wherein x is greater than or equal to 1 and less than 1; y is greater than or equal to 0.4 and less than or equal to 1; x+y=1; and M is selected from any one or a combination of any more than two kinds of rare earth elements of silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or lanthanide. According to the invention, the metal oxide thin film transistor prepared by a wet method back channel etch mode is realized, and the preparation process is simple; the prepared metal oxide thin film transistor is high in stability and low in cost; and the array substrate and the display apparatus equipped with the metal oxide thin film transistor also have the characteristics of high stability and low cost.
Description
Technical field
The present invention relates to photoelectric device technical field, particularly to a kind of metal oxide thin-film transistor and preparation method thereof and array base palte and the display device with this metal oxide thin-film transistor.
Background technology
In recent years, novel flat-plate shows that (FlatPanelDisplay, FPD) industry development is maked rapid progress, and the high demand shown for large scale, high resolution flat promotes day by day. As thin film transistor (TFT) (ThinFilmTransistor, the TFT) backplane technology of FPD industry core technology, also experiencing deep change.
Metal-oxide (MetalOxide, MO) TFT not only have mobility higher, can room temperature prepare, the feature such as visible transparent, but also there is excellent large-area uniformity, therefore oxide TFT technology has just attracted much industry attention since being born.
The metal-oxide semiconductor (MOS) TFT technology advantage because having multi-crystal TFT and non-crystalline silicon tft concurrently, it is believed that be the device of most potentiality in Display Technique of future generation. Especially in the preparation of TFT panel, the preparation technology of metal-oxide TFT and existing non-crystalline silicon tft production technology because similar device architecture and can low-temperature growth and compatible, namely back of the body channel etching (BackChannelEtch, the BCE) technique that technical process is simple, cost is low can be adopted. But owing to metal-oxide film chemical stability is poor, when it is as active layer material, the liquid that is easily etched damages, so that the back of the body channel etching manufacturing process of metal oxide thin-film transistor is difficult in prior art.
Therefore, not enough for prior art, it is provided that a kind of metal oxide thin-film transistor and preparation technology thereof are to overcome prior art deficiency very necessary.
Summary of the invention
It is an object of the invention to avoid the deficiencies in the prior art part to provide a kind of metal oxide thin-film transistor and preparation method thereof, metal oxide thin-film transistor and preparation method thereof solves metal oxide thin-film transistor in prior art cannot carry on the back problem prepared by channel etching mode by wet method, metal oxide thin-film transistor of the present invention and preparation method thereof can be carried on the back channel etching mode by wet method and prepare, there is preparation technology simple, prepared metal oxide thin-film transistor good stability, feature with low cost.
The above-mentioned purpose of the present invention is realized by following technological means.
Thering is provided a kind of metal oxide thin-film transistor, be provided with active layer protective layer active layer and source-drain electrode separated, described active layer protective layer is (MO) x (SnO2) y thin film, wherein 0��x < 1,0.4��y��1, and the combination that x+y=1, M are one or more arbitrary elements in silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or lanthanide series rare-earth elements.
The thickness of above-mentioned active layer protective layer is 1 ~ 30nm.
Preferably, the thickness of above-mentioned active layer protective layer is 2 ~ 10nm.
Above-mentioned active layer is metal oxide semiconductor material, and described active layer is made up of single thin film or is made up of folded the setting of plural layers.
Above-mentioned metal oxide thin-film transistor, active layer and active layer protective layer are patterned obtaining the figure layer of patterning by a patterning processes.
Above-mentioned metal oxide thin-film transistor, the etching liquid of active layer protective layer is any one in Fluohydric acid., formic acid, acetic acid, glacial acetic acid or oxalic acid.
Above-mentioned metal oxide thin-film transistor, source-drain electrode adopts wet method back of the body channel etching mode to pattern.
The preparation method that the present invention provides a kind of above-mentioned metal oxide thin-film transistor, active layer deposits active layer protective layer in any one mode in physical vaporous deposition, chemical vapour deposition technique, pulsed laser deposition, atomic layer deposition method, solwution method or thermal evaporation, active layer protective layer and active layer are patterned obtaining the figure layer of patterning entirely through a patterning processes; The etching liquid of active layer protective layer is any one in Fluohydric acid., formic acid, acetic acid, glacial acetic acid or oxalic acid;
The source-drain electrode of metal oxide thin-film transistor adopts wet method back of the body channel etching mode to pattern.
The present invention also provides for a kind of array base palte, has above-mentioned metal oxide thin-film transistor.
The present invention also provides for a kind of display device, has above-mentioned array base palte.
The metal oxide thin-film transistor of the present invention, is provided with active layer protective layer active layer and source-drain electrode separated, and described active layer protective layer is (MO) x (SnO2) y thin film, wherein 0��x < 1,0.4��y��1, and the combination that x+y=1, M are one or more arbitrary elements in silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or lanthanide series rare-earth elements. The present invention is by arranging (MO) x (SnO2) y thin film is as active layer protective layer, it is achieved that carry on the back channel etching mode by wet method and prepare metal oxide thin-film transistor, there is preparation technology simple, prepared metal oxide thin-film transistor good stability, with low cost. Array base palte and the display device with this metal oxide thin-film transistor also have good stability, feature with low cost.
The preparation method of the metal oxide thin-film transistor of the present invention, deposits active layer protective layer on active layer, is patterned obtaining the figure layer of patterning by active layer protective layer and active layer entirely through a patterning processes. Achieve and prepare metal oxide thin-film transistor by wet method back of the body channel etching mode, there is preparation technology simple, prepared metal oxide thin-film transistor good stability, with low cost.
Accompanying drawing explanation
The present invention is further illustrated to utilize accompanying drawing, but the content in accompanying drawing does not constitute any limitation of the invention.
Fig. 1 is the structural representation of a kind of metal oxide thin-film transistor of the present invention.
Fig. 2 is the schematic diagram of the step a) of the preparation method of the metal oxide thin-film transistor of the embodiment of the present invention 2;
Fig. 3 is the schematic diagram of the step b) of the preparation method of the metal oxide thin-film transistor of embodiments of the invention 2;
Fig. 4 is the schematic diagram of the step c) of the preparation method of the metal oxide thin-film transistor of embodiments of the invention 2;
Fig. 5 is the schematic diagram of the step d) of the preparation method of the metal oxide thin-film transistor of embodiments of the invention 2;
Fig. 6 is the transfer characteristic curve figure of the metal oxide thin-film transistor of embodiments of the invention 3;
Fig. 7 is the transfer characteristic curve figure of the metal oxide thin-film transistor of embodiments of the invention 4.
In FIG, including:
Substrate 01, grid 02, gate insulator 03, active layer 04,
Active layer protective layer 05, source electrode 06-1, drain electrode 06-2, passivation layer 07.
Detailed description of the invention
The invention will be further described with the following Examples.
Embodiment 1.
A kind of metal oxide thin-film transistor; as shown in Figure 1; including the grid 02 being located in substrate 01; cover the gate insulator 03 of grid 02, be located at the source-drain electrode on the semiconductor active layer 04 above gate insulator 03, active layer protective layer 05, active layer protective layer (source electrode indicates with 06-1, drain electrode indicates with 06-2) and passivation layer 07.
Wherein, active layer protective layer is (MO) x (SnO2) y thin film, wherein 0��x < 1,0.4��y��1, and the combination that x+y=1, M are one or more arbitrary elements in silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or lanthanide series rare-earth elements.
The thickness of active layer protective layer is 1 ~ 30nm, it is preferred to 2 ~ 10nm.
Active layer is metal oxide semiconductor material, and active layer can be made up of single thin film or is made up of folded the setting of plural layers. The material of active layer 04 can be: the combination of any one or its lamination in Indium sesquioxide. (InO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium (Ga-IZO), tin indium oxide (Sn-IZO), Indium sesquioxide. hafnium (Hf-IZO), Indium sesquioxide. aluminum (Al-IZO), Indium sesquioxide. tantalum (Ta-IZO), Indium sesquioxide. magnesium (Mg-IZO), can certainly be other semi-conducting materials, set as the case may be.
The material of source electrode 06-1 and drain electrode 06-2 is the combination of a kind of or its lamination in metal, alloy, oxidic transparent conductive film, Graphene, CNT, organic conductive layers, naturally it is also possible to for other conductive materials, sets as the case may be.
This metal oxide thin-film transistor, active layer protective layer can adopt the preparation method in magnetron sputtering, pulsed laser deposition, chemical vapour deposition (CVD), atomic force deposition or solwution method to be prepared from. Active layer and active layer protective layer are patterned obtaining the figure layer of patterning by a patterning processes. The etching liquid of active layer protective layer is any one in Fluohydric acid., formic acid, acetic acid, glacial acetic acid or oxalic acid.
This metal oxide thin-film transistor, source-drain electrode adopts wet method back of the body channel etching mode to pattern.
Metal oxide thin-film transistor in the present embodiment, is provided with active layer protective layer and active layer is protected, and active layer protective layer is the metal-oxide of stannum oxide and doping thereof, its with active layer can entirety adopt together with photoetching composition be patterned; And, namely protective layer itself is semi-conducting material, it is not necessary to the extra technique increasing removal protective layer, can not only realize the protection to active layer better, and have the simple feature of preparation technology. Additionally; the etching liquids such as various strong acid and highly basic are had very strong corrosion stability by protective layer; therefore when adopting the source-drain electrode of wet method pattern thin film transistor (TFT); active layer protective layer can protect active layer not by the impact of etching liquid effectively, thus the wet method back of the body raceway groove mode realizing low cost prepares thin film transistor (TFT).
In sum, the metal oxide thin-film transistor of the present embodiment is by arranging (MO) x (SnO2) y thin film is as active layer protective layer, it is achieved that carry on the back channel etching mode by wet method and prepare metal oxide thin-film transistor, there is preparation technology simple, prepared metal oxide thin-film transistor good stability, with low cost.
Embodiment 2.
The preparation method of a kind of metal oxide thin-film transistor, for preparing the metal oxide thin-film transistor of embodiment 1. As shown in Figures 2 to 5, comprise the steps.
A) in substrate 01, adopt the mode deposition of gate metal layer thin film of magnetron sputtering, formed the pattern including thin-film transistor gate 02 and gate line by photoetching process, as shown in Figure 2.
It should be noted that the material of substrate 01 can be hard glass substrate, it is also possible to be flexible substrates, as: PEN (PEN), polyethylene terephthalate (PET), polyimides (PI) or metal forming flexible substrate.
It should be noted that substrate 01 can be the substrate being formed without any rete, such as white glass, it is also possible to be the substrate being formed with other rete or pattern, for instance be formed with the substrate of cushion. Photoetching process generally includes the techniques such as photoresist coating, front baking, exposure, development, after bake, etching, photoresist lift off. Above-mentioned steps is specially and is initially formed gate metal layer film, and coating photoresist covers gate metal layer film; After front baking, utilize mask plate to expose, form exposure region and non-exposed area; Carrying out development and remove the photoresist (for positive photoresist) of exposure region, non-exposed area photoresist retains; After after bake operation, etching grid metal layer thin film, the gate metal layer film of non-exposed area is not etched due to the protection of photoresist; Finally, stripping photoresist, form the figure including thin-film transistor gate 02 and other metal wire.
Wherein, the material of gate metal layer film can for aluminum, copper, molybdenum, titanium, silver, gold, tantalum, tungsten, chromium metal simple-substance or its alloy or the laminated construction being made up of it. It is preferably the single or multiple lift composite membrane of copper, molybdenum, aluminum or their alloy composition.
B) in the substrate 01 completing above-mentioned steps, adopt the preparation methoies such as chemical vapour deposition (CVD), physical vapour deposition (PVD), atomic force deposition or solwution method, form gate insulator 03, as shown in Figure 3.
Wherein, the material of gate insulator 03 can be a kind of or multiple material composition in them the multilayer complex films in the oxide of silicon, the nitride of silicon, the oxide of hafnium, the nitrogen oxides of silicon, the oxide of aluminum or organic insulation etc.
C) after completing the procedure, then adopt the preparation method in magnetron sputtering, pulsed laser deposition, chemical vapour deposition (CVD), atomic force deposition or solwution method, sequentially form active layer 04 and active layer protective layer 05; Then together with being adopted with active layer entirety by active layer protective layer, photoetching composition is patterned, as shown in Figure 4.
Wherein, the material of metal-oxide semiconductor (MOS) active layer 04 is preferably: one in Indium sesquioxide. (InO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium (Ga-IZO), tin indium oxide (Sn-IZO), Indium sesquioxide. hafnium (Hf-IZO), Indium sesquioxide. aluminum (Al-IZO), Indium sesquioxide. tantalum (Ta-IZO), Indium sesquioxide. magnesium (Mg-IZO) or its stack combinations.
The material of active layer protective layer is (MO) x (SnO2) y thin film, wherein 0��x < 1,0.4��y��1, and the combination that x+y=1, M are one or more arbitrary elements in silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or lanthanide series rare-earth elements. It is preferably, silicon stannum oxygen, aluminum stannum oxygen, gallium stannum oxygen compound.
D) after completing the procedure, form source-drain electrode layer film the figure forming, by photoetching process, the source electrode 06-1 including thin film transistor (TFT), draining 06-2 in preparation, and source-drain electrode invests on active layer protective layer, as shown in Figure 5.
Wherein, source-drain electrode materials is the combination of a kind of or its lamination in metal, alloy, oxidic transparent conductive film, Graphene, CNT, organic conductive layers. It is preferably: the combination of molybdenum, aluminum, copper and alloy thereof or its lamination.
Wherein, the preparation technology of source-drain electrode includes: first adopts magnetron sputtering technique depositing metal films as source-drain electrode thin film in the substrate 01 include active layer protective layer, adopts the photoetching process described in step a) to form the figure layer pattern including thin film transistor (TFT) source-drain electrode and other cabling; Wet method back of the body channel etching scheme etching is adopted to form required figure layer. Needing exist for illustrating, because this metal oxide thin-film transistor contains active layer protective layer, etching liquid is had very strong anti-etching performance by it; Therefore, active layer under it can be effectively prevented from the liquid damage that is etched. Finally, remove photoresist protective layer, complete the preparation of source-drain electrode.
E) in the substrate 01 completing above-mentioned steps, form passivation layer thin film 07, and form required pattern by photoetching process, as shown in Figure 1.
Wherein, passivation material is preferably: silicon oxide, the combination of silicon nitride, silicon oxynitride, aluminium oxide or its lamination.
The preparation method of the metal oxide thin-film transistor of the present embodiment; can effectively protect active layer when wet etching source-drain electrode not by the impact of etching liquid; without additional technique, active layer protective layer is further processed; and then realize the better protection to active layer, so the performance of the thin film transistor (TFT) of the preparation method formation of the present invention is more superior. The present embodiment achieves prepares metal oxide thin-film transistor by wet method back of the body channel etching mode, has preparation technology simple, and prepared metal oxide thin-film transistor good stability is with low cost.
Embodiment 3.
The preparation method that the present embodiment provides a kind of thin film transistor (TFT), specifically includes following steps:
A) adopt magnetron sputtering mode to deposit the metal molybdenum thin film of 200nm in substrate, form gate metal layer by photoetching process.
B) adopting the gate insulation layer thin film of chemical vapor deposition manner deposition lamination, gate insulator layer film is silicon nitride thick for 250nm and the silicon oxide of 50nm thickness, and forms gate insulation layer by photoetching process.
C) after completing gate insulation layer; magnetron sputtering deposition mode is adopted to be sequentially depositing active layer and active layer protective layer again; wherein active layer is indium gallium zinc (IGZO) thin film that 50nm is thick, and active layer protective layer is gallium stannum oxygen (GaSnO) thin film that 5nm is thick. The figure layer of active layer and active layer protective layer it is formed with finally by photoetching process. Here, the etching liquid of active layer protective layer and active layer is oxalate base etching liquid.
D) adopt magnetron sputtering mode to deposit the molybdenum layer of 200nm as source-drain electrode layer, and form source-drain electrode figure layer by photoetching process. Here, the etching liquid of molybdenum is commercial strong acid etching liquid.
E) finally adopt the mode of chemical vapour deposition (CVD) to deposit the SiOx thin film of 300nm as passivation layer, form passivation layer desirable pattern again through photoetching process.
The transfer curve performance of the metal oxide thin-film transistor that the present embodiment prepares is as shown in Figure 6. Device threshold voltage is 3.8V, and saturated mobility is 9.6cm2/ Vs, subthreshold swing is 0.24V/decade, and current on/off ratio is 108, it can be seen that the metal oxide thin-film transistor function admirable of the present embodiment.
The preparation method of the thin film transistor (TFT) of the present embodiment; can effectively protect active layer when wet etching source-drain electrode not by the impact of etching liquid; without additional technique, protective layer is further processed; and then realize the better protection to active layer, so the performance of the thin film transistor (TFT) of the preparation method formation of the present invention is more superior. The present embodiment achieves prepares metal oxide thin-film transistor by wet method back of the body channel etching mode, has preparation technology simple, and prepared metal oxide thin-film transistor good stability is with low cost.
Embodiment 4.
The preparation method that the present embodiment provides a kind of thin film transistor (TFT), specifically includes following steps:
A) adopt magnetron sputtering mode to deposit the metal molybdenum thin film of 200nm in substrate, form gate metal layer by photoetching process.
B) adopting the gate insulation layer thin film of chemical vapor deposition manner deposition lamination, gate insulator layer film is silicon nitride thick for 250nm and the silicon oxide of 50nm thickness, and forms gate insulation layer by photoetching process.
C) after completing gate insulation layer; magnetron sputtering deposition mode is adopted to be sequentially depositing active layer and active layer protective layer again; wherein active layer is indium zinc oxide (IZO) thin film that 10nm is thick; active layer protective layer is silicon stannum oxygen (SiSnO) thin film that 10nm is thick, is formed with the figure layer of active layer and active layer protective layer by photoetching process. Here, the etching liquid of active layer protective layer and active layer is acetic acid etching liquid.
D) adopt magnetron sputtering mode to deposit the molybdenum layer of 250nm as source-drain electrode layer, and form source-drain electrode figure layer by photoetching process. Here, the etching liquid of molybdenum is commercial strong acid etching liquid.
E) finally adopt the mode of chemical vapour deposition (CVD) to deposit the SiOx thin film of 300nm as passivation layer, form passivation layer desirable pattern again through photoetching process.
The transfer curve performance of the metal oxide thin-film transistor that the present embodiment prepares is as shown in Figure 7. Device threshold voltage is-1.2V, and saturated mobility is 40.5cm2/ Vs, subthreshold swing is 0.10V/decade, and current on/off ratio is 109, it can be seen that the metal oxide thin-film transistor function admirable of the present embodiment.
The preparation method of the thin film transistor (TFT) of the present embodiment; can effectively protect active layer when wet etching source-drain electrode not by the impact of etching liquid; without additional technique, protective layer is further processed; and then realize the better protection to active layer, so the performance of the thin film transistor (TFT) of the preparation method formation of the present invention is more superior. The present embodiment achieves prepares metal oxide thin-film transistor by wet method back of the body channel etching mode, has preparation technology simple, and prepared metal oxide thin-film transistor good stability is with low cost.
Embodiment 5.
A kind of array base palte, including any one metal oxide thin-film transistor in such as above-described embodiment 1 to 4, also includes other figure layer and the structures such as pixel electrode, public electrode, sealing coat certainly. Owing to the array base palte of the present embodiment includes above-mentioned thin film transistor (TFT), therefore its performance is more stable.
Embodiment 6.
A kind of display device, it includes the array base palte of embodiment 5, and this display device can be used for any product with display function or the parts such as mobile phone, panel computer, television set, display, notebook computer, DPF, navigator. Having the array base palte in embodiment 5 in the display device of the present embodiment, therefore its performance is better, display effect is good.
Certainly, can also including other conventional structures in the display device of the present embodiment, such as power subsystem, display driver element etc., this is no longer going to repeat them.
Finally should be noted that; above example is only in order to illustrate technical scheme but not limiting the scope of the invention; although the present invention being explained in detail with reference to preferred embodiment; it will be understood by those within the art that; technical scheme can be modified or equivalent replacement, without deviating from the spirit and scope of technical solution of the present invention.
Claims (10)
1. a metal oxide thin-film transistor, it is characterised in that: being provided with active layer protective layer active layer and source-drain electrode separated, described active layer protective layer is (MO) x (SnO2) y thin film, wherein 0��x < 1,0.4��y��1, and the combination that x+y=1, M are one or more arbitrary elements in silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or lanthanide series rare-earth elements.
2. metal oxide thin-film transistor according to claim 1, it is characterised in that: the thickness of described active layer protective layer is 1 ~ 30nm.
3. metal oxide thin-film transistor according to claim 2, it is characterised in that: the thickness of described active layer protective layer is 2 ~ 10nm.
4. metal oxide thin-film transistor according to claim 3, it is characterised in that: described active layer is metal oxide semiconductor material, and described active layer is made up of single thin film or is made up of folded the setting of plural layers.
5. metal oxide thin-film transistor according to claim 4, it is characterised in that: active layer and active layer protective layer are patterned obtaining the figure layer of patterning by a patterning processes.
6. metal oxide thin-film transistor according to claim 5, it is characterised in that: the etching liquid of active layer protective layer is any one in Fluohydric acid., formic acid, acetic acid, glacial acetic acid or oxalic acid.
7. metal oxide thin-film transistor according to claim 6, it is characterised in that: source-drain electrode adopts wet method back of the body channel etching mode to pattern.
8. the preparation method of the metal oxide thin-film transistor as described in claim 1 to 7 any one, it is characterized in that: on active layer, deposit active layer protective layer in any one mode in physical vaporous deposition, chemical vapour deposition technique, pulsed laser deposition, atomic layer deposition method, solwution method or thermal evaporation, active layer protective layer and active layer are patterned obtaining the figure layer of patterning entirely through a patterning processes; The etching liquid of active layer protective layer is any one in Fluohydric acid., formic acid, acetic acid, glacial acetic acid or oxalic acid; The source-drain electrode of metal oxide thin-film transistor adopts wet method back of the body channel etching mode to pattern.
9. an array base palte, it is characterised in that: have such as the metal oxide thin-film transistor of claim 1 to 7 any one.
10. a display device, it is characterised in that: there is array base palte as claimed in claim 9.
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