CN107749422A - Oxide semiconductor thin-film transistor - Google Patents
Oxide semiconductor thin-film transistor Download PDFInfo
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- CN107749422A CN107749422A CN201710858679.1A CN201710858679A CN107749422A CN 107749422 A CN107749422 A CN 107749422A CN 201710858679 A CN201710858679 A CN 201710858679A CN 107749422 A CN107749422 A CN 107749422A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 239000010409 thin film Substances 0.000 title claims abstract description 72
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- 238000001039 wet etching Methods 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 14
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 12
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 169
- 238000000034 method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 28
- 239000011241 protective layer Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 12
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- 150000004706 metal oxides Chemical group 0.000 claims description 10
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- 238000000151 deposition Methods 0.000 claims description 9
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000007687 exposure technique Methods 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 230000001458 anti-acid effect Effects 0.000 abstract description 10
- 230000004888 barrier function Effects 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 9
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- 230000008569 process Effects 0.000 description 15
- 239000011701 zinc Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 10
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- 239000010937 tungsten Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 229910052735 hafnium Inorganic materials 0.000 description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
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- 229910000583 Nd alloy Inorganic materials 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- 238000012546 transfer Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
A kind of oxide semiconductor thin-film transistor, is provided with semiconductor cap layer between channel layer and source-drain electrode, and semiconductor cap layer is (MO)x(NO)y, wherein, 0.1<X≤0.8,0.2≤y<0.9, and x+y=1；Wherein, at least one of M Zr, Si, Hf and W element, at least one of N Zn, Ga, Ag, Ti and Cu element.M element can play a part of providing semiconductor cap layer carrier transport path; N element can play a part of improving carrier concentration in the antiacid etching property of semiconductor cap layer chemical stability, increase semiconductor cap layer and control oxide semiconductor cap layer body; above-mentioned oxide semiconductor thin-film transistor is enabled to both to be avoided that damage problem during wet etching to carrying on the back raceway groove; channel layer is preferably protected, the process for preparing etching barrier layer together need not be increased again.The threshold voltage of oxide thin film transistor can also be regulated and controled.
Description
Technical field
The present invention relates to thin-film transistor technologies field, more particularly to a kind of oxide semiconductor thin-film transistor.
Background technology
With the arrival of information age, display is accelerating the direction to panelized, energy-saving to develop.Flat-panel monitor
(Flat Panel Display, FPD) is presently the most popular a kind of display device.It is most widely used in flat display field
Technology be exactly thin-film transistor technologies (Thin Film Transistor, TFT).
The active layer material of the thin-film transistor technologies of current main-stream is Si materials, including non-crystalline silicon, polysilicon etc..But
Amorphous silicon film transistor less stable and mobility is relatively low, and polycrystalline SiTFT is due to the presence of crystal boundary, it is made
Standby homogeneity is poor and high expensive.These technologies be can not meet simultaneously now and ultrahigh resolution in future, oversize,
The requirement of Flexible Displays.
Comparatively speaking, oxide thin film transistor has that mobility is of a relatively high, have good uniformity, process temperatures are relatively low
And the advantages that compatible with current non-crystalline silicon producing line is considered as one of most promising TFT technology of future generation, is now subjected to state
Inside and outside academia and the extensive concern of industrial circle.
The oxide semiconductor material chemical stability of main flow is poor at present, quite sensitive to acid, with wet etching work
Easily occurs the problem of back of the body raceway groove damage when skill patterns source-drain electrode.In order to obtain high performance oxide thin film transistor,
Need additionally by the etching barrier layer of photoetching process one pattern layers of addition, so as to increase preparation cost.
The content of the invention
Based on this, it is necessary to one kind is provided during wet etching, can preferably protect channel layer, and without increasing
Add the oxide semiconductor thin-film transistor of etching barrier layer.
A kind of oxide semiconductor thin-film transistor, semiconductor cap layer is provided between channel layer and source-drain electrode,
The semiconductor cap layer is (MO)x(NO)y, wherein, 0.1<X≤0.8,0.2≤y<0.9, and x+y=1；Wherein,
M is at least one of Zr, Si, Hf and W element, at least one of N Zn, Ga, Ag, Ti and Cu element.
In one of the embodiments, the thickness of the semiconductor cap layer is 2nm~20nm.
In one of the embodiments, the thickness of the semiconductor cap layer is 2nm~10nm.
In one of the embodiments, the carrier concentration of the semiconductor cap layer is 1 × 1016cm-3To 1 ×
1019cm-3Between.
In one of the embodiments, the semiconductor cap layer is using physical gas-phase deposition, chemical vapor deposition
Technique or solution preparation process are prepared.
In one of the embodiments, the semiconductor cap layer carries out figure with active layer commonly through single exposure technique
Caseization operates.
In one of the embodiments, the material of the channel layer is metal oxide semiconductor material, the metal oxygen
Compound semi-conducting material contains at least one of In, Sn, Cu, Ti and Zn element；The active layer be single thin film structure or
Multi-layer film structure.
In one of the embodiments, the oxide semiconductor thin-film transistor is provided with grid, channel layer, gate insulation
Layer and source-drain electrode, for the gate insulation layer between the grid and the channel layer, the semiconductor cap layer is located at institute
State between channel layer and the source-drain electrode.
In one of the embodiments, the patterning operations of the source-drain electrode are carried out using wet etching, the etching
Liquid is at least one of sulfuric acid, hydrochloric acid, acetic acid, phosphoric acid, nitric acid and aluminium etching liquid.
The M element of above-mentioned semiconductor cap layer can play a part of providing semiconductor cap layer carrier transport path, N
Element, which can play, improves the antiacid etching property of semiconductor cap layer chemical stability, increase semiconductor cap layer and control oxide
The effect of carrier concentration in semiconductor cap layer body, so that above-mentioned oxide semiconductor thin-film transistor can be kept away
To carrying on the back the damage problem of raceway groove when exempting from wet etching, channel layer is preferably protected, need not increase again and prepare etching barrier layer together
Process.The semiconductor cap layer can also regulate and control the threshold voltage of oxide thin film transistor.
Brief description of the drawings
Fig. 1-Fig. 6 is each rank in the preparation process of the oxide semiconductor thin-film transistor of an embodiment of the present invention
The structural representation of section；
Fig. 7 is the transfer characteristic curve figure of the oxide semiconductor thin-film transistor of an embodiment of the present invention.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of running counter to intension of the present invention, therefore the present invention is not limited to the specific embodiments disclosed below.
The oxide semiconductor thin-film transistor of one embodiment, semiconductor is provided between channel layer and source-drain electrode
Protective layer, the semiconductor cap layer are (MO)x(NO)y, wherein, 0.1<X≤0.8,0.2≤y<0.9, and x+y=1；Wherein, M
For at least one of Zr (zirconium), Si (silicon), Hf (hafnium) and W (tungsten) element, N is Zn (zinc), Ga (gallium), Ag (silver), Ti (titanium)
With at least one of Cu (copper) element.
The M element of above-mentioned semiconductor cap layer can play a part of providing semiconductor cap layer carrier transport path, N
Element, which can play, improves the antiacid etching property of semiconductor cap layer chemical stability, increase semiconductor cap layer and control oxide
The effect of carrier concentration in semiconductor cap layer body, so that above-mentioned oxide semiconductor thin-film transistor can be kept away
To carrying on the back the damage problem of raceway groove when exempting from wet etching, channel layer is preferably protected, need not increase again and prepare etching barrier layer together
Process.The semiconductor cap layer can also regulate and control the threshold voltage of oxide thin film transistor.
In one embodiment, the thickness of the semiconductor cap layer is 2nm~20nm；And for example, the semiconductor cap layer
Thickness be 2nm~10nm, so, the preferable oxygen of device performance can be prepared using the semiconductor cap layer of above-mentioned thickness
Compound semiconductor thin-film transistor；And for example, the carrier concentration of the semiconductor cap layer is 1 × 1019cm-3With 1 × 1016cm-3, so, the switch performance using the semiconductor cap layer of carrier concentration is preferable.
In one embodiment, the semiconductor cap layer using physical gas-phase deposition, chemical vapor deposition method or
Solution preparation process is prepared；And for example, the semiconductor cap layer carries out figure with active layer commonly through single exposure technique
Caseization operates；；And for example, the material of the channel layer is metal oxide semiconductor material, the metal-oxide semiconductor (MOS) material
Material contains at least one of In, Sn, Cu, Ti and Zn element；The active layer has single thin film structure or plural layers knot
Structure；And for example, the oxide semiconductor thin-film transistor is provided with grid, gate groove layer, insulating barrier and source-drain electrode, the grid
For insulating barrier between the grid and the channel layer, the semiconductor cap layer is located at the channel layer and source and drain electricity
Between pole；And for example, the patterning operations of the source-drain electrode are carried out using etching liquid, and the etching liquid is sulfuric acid, hydrochloric acid, vinegar
At least one of acid, phosphoric acid, nitric acid and aluminium etching liquid；And for example, the oxide semiconductor thin-film transistor is additionally provided with blunt
Change layer, passivation layer depositing insulating layer after the source-drain electrode patterning operations is formed, in such manner, it is possible to which device is prepared
The oxide semiconductor thin-film transistor of better performances.
For example, a kind of oxide thin film transistor, prepares layer of semiconductor protection on channel layer, under source-drain electrode
Layer；The composition of the semiconductor cap layer is (MO)x(NO)y, wherein 0.1<X≤0.8,0.2≤y<0.9, and x+y=1.Wherein M is
Zr (zirconium), Si (silicon), Hf (hafnium) and one kind in W (tungsten) or any two or more element, N are Zn (zinc), Ga (gallium), Ag
(silver), Ti (titanium) and one kind in Cu (copper) or any two or more element.And for example, the thickness of the semiconductor cap layer is
2nm-20nm.And for example, the thickness of the semiconductor cap layer is 2nm-10nm.And for example, the carrier concentration of the semiconductor cap layer
Less than 1 × 1019cm-3, more than 1 × 1016cm-3.And for example, the semiconductor cap layer is by physical vapour deposition (PVD), chemical vapor deposition
Or method prepared by solution is prepared.And for example, described semiconductor protection layer film and active layer are commonly through single exposure
Technique is patterned.And for example, described channel layer is metal oxide semiconductor material, and described active layer is individual layer or more
Layer film, the material of described oxide semiconductor layer contain any one or more than one in In, Sn, Cu, Ti and Zn
Combination.And for example, a kind of oxide thin film transistor, grid, channel layer, the insulation between grid and channel layer are provided with
Layer, source-drain electrode, the semiconductor cap layer between channel layer and source-drain electrode, the semiconductor cap layer are arranged to any
Described semiconductor cap layer.And for example, in source-drain electrode patterning process using sulfuric acid, hydrochloric acid, acetic acid, phosphoric acid, nitric acid or
Any one or more than one etching liquid of aluminium etching liquid.And for example, the preparation of passivation layer can be free of, also can further be existed
Depositing insulating layer is as passivation layer after source-drain electrode patterning.
For example, a kind of oxide semiconductor thin-film being used for as oxide thin film transistor active layer protective layer, the oxygen
Compound semiconductor protection layer film is located at active layer, under source-drain electrode；The composition of oxide semiconductor thin-film is (MO) x
(NO) y, wherein 0.1<X≤0.8,0.2≤y<0.9, and x+y=1.Wherein M is in Zr (zirconium), Si (silicon), Hf (hafnium) and W (tungsten)
One kind or any two or more element, N is Zn (zinc), Ga (gallium), Ag (silver), Ti (titanium) and one kind in Cu (copper) or or
Any two or more element.For example, the oxide semiconductor material chemical stability of main flow is poor, it is quite sensitive to acid,
Easily occurs the problem of back of the body raceway groove damages when patterning source-drain electrode with wet-etching technology.In order to obtain high performance oxide
Thin film transistor (TFT) by photoetching process, it is necessary to additionally add the etching barrier layer of a pattern layers, so as to increase preparation cost.Pin
To above mentioned problem, there is provided a kind of oxide semiconductor protective layer, to carrying on the back the damage problem of raceway groove when being both avoided that wet etching, again
One of Mask need not be increased and prepare etching barrier layer, so as to be saved on the premise of wet etching effect and protection channel layer is ensured
Process.In addition, described oxide semiconductor protective layer can also regulate and control the threshold voltage of oxide thin film transistor.For example,
The threshold voltage of oxide semiconductor thin-film transistor drives influential effect very big to it.Oxide thin film transistor master at present
To regulate and control threshold voltage by regulating and controlling active layer process, but mobility and threshold be present by regulating and controlling in active layer technical process
Tradeoff between threshold voltage.The positive excursion of threshold voltage is generally accompanied with the reduction of mobility.Above-mentioned sull
Transistor channel layer protective layer, the channel protective layer can be avoided during wet etching to the damage problem for carrying on the back raceway groove, and can regulation and control oxide
Threshold voltage in thin film transistor (TFT).
A kind of for example, oxide thin film transistor, it is characterised in that：On channel layer, one is prepared under source-drain electrode
Layer semiconductor cap layer；The composition of the semiconductor cap layer is (MO)x(NO)y, wherein 0.1<X≤0.8,0.2≤y<0.9, and x+
Y=1.Wherein M is Zr (zirconium), Si (silicon), Hf (hafnium) and one kind in W (tungsten) or arbitrarily two or more elements, N Zn
(zinc), Ga (gallium), Ag (silver), Ti (titanium) and one kind or or any two or more element in Cu (copper).The oxide is partly led
Body protective layer has outstanding antiacid etching type, is avoided that oxide channel layer runs into damage in source-drain electrode etching process
Evil.Other oxide semiconductor protective layer contact with channel layer and source-drain electrode is preferable, will not form Schottky contacts.And
The threshold value in oxide thin film transistor can be regulated and controled by regulating and controlling the oxygen content concentration in oxide semiconductor protective layer body
Voltage.For example, wet etching is that etachable material is immersed in the technology corroded in corrosive liquid.Threshold voltage typically refer to by
Output voltage changes with input voltage and drastically changes input voltage corresponding to the midpoint of break over region in transfer curve.
Specific embodiment is presented below to be described further above-mentioned oxide thin film transistor.
Drawing reference numeral explanation：01st, substrate；02nd, grid；03rd, gate insulation layer；04th, channel layer；05th, semiconductor cap layer；
06th, source-drain electrode；07th, passivation layer.
Embodiment 1
The embodiment of the present invention provides a kind of oxide semiconductor protective layer, and the oxide semiconductor protective layer is located at channel layer
On, under source-drain electrode.The oxide semiconductor protective layer can prepare layer of semiconductor protective layer；The oxide semiconductor
Material can avoid regulating and controlling the threshold voltage in oxide thin film transistor to the damage problem for carrying on the back raceway groove, and can during wet etching.
The composition of the semiconductor cap layer is (MO)x(NO)y, wherein 0.1<X≤0.8,0.2≤y<0.9, and x+y=1.Its
Middle M is Zr (zirconium), Si (silicon), Hf (hafnium) and one kind in W (tungsten) or arbitrarily two or more elements, and N is Zn (zinc), Ga
(gallium), Ag (silver), Ti (titanium) and one kind or or any two or more element in Cu (copper).
, wherein it is desired to explanation is：M element primarily serves the effect for providing semiconductor cap layer carrier transport path.N
Element, which primarily serves, improves the antiacid etching property of semiconductor cap layer chemical stability, increase semiconductor cap layer and control oxide
The effect of carrier concentration in semiconductor cap layer body.
Optionally, the thickness of oxide semiconductor protective layer is 2nm to 20nm.Wherein, using thickness between 2nm to 5nm
Between the device performance of thin film transistor (TFT) for preparing of oxide semiconductor protective layer it is preferable.
Optionally, the carrier concentration of oxide semiconductor protective layer is less than 5 × 1019cm-3.Wherein, it is dense using carrier
Degree is between 1 × 1016cm-3To 1 × 1018cm-3Between the switch of thin film transistor (TFT) for preparing of oxide semiconductor protective layer
Better performances.
In embodiments of the present invention, the oxide semiconductor protective layer have chemical stability it is strong, it is antiacid etching property by force with
And the advantages that controllable oxide thin film transistor threshold voltage.
Embodiment 2
Also referring to Fig. 1 to Fig. 6, the embodiments of the invention provide a kind of preparation of oxide semiconductor thin-film transistor
Method, comprise the following steps：
A, in the grid depositing metal conductive layer of substrate 01, and photoetching process is used by the patterned grid 02 of metallic diaphragm；
Specifically, metal used in metallic diaphragm is in aluminium, copper, molybdenum, titanium, silver, gold, tungsten simple substance or alloy.
It should be noted that the thickness range of metallic diaphragm is in the range of 100nm-3000nm, its specific thickness and structure
Situation about being not limited into material in embodiment.
B, on grid 02, depositing insulating layer film is as gate insulator 03.
Specifically, gate insulation layer film be silica, silicon nitride, zirconium oxide, aluminum oxide, one kind in tantalum oxide films or
It is a variety of.
It should be noted that the thickness range of gate insulation layer is in the range of 100nm-1000nm, its specific thickness and structure
Situation about being not limited into material in embodiment.
C, on gate insulator 03, deposition oxide semiconductive thin film is as channel layer 04.
D, on channel layer deposited semiconductor protective layer 05 and using single exposure technique by channel layer and semiconductor protection
Pattern layers；
Specifically, the thickness of semiconductor cap layer is between 2nm-20nm；
D, after annealing processing is carried out to channel layer 04 and semiconductor cap layer 05, changes its etching in acid etching liquid
Speed.
Specifically, channel layer annealing way for thermal annealing, laser annealing or microwave annealing any one or it is a kind of with
On annealing way.After annealed processing, the rate of dissolution of channel layer 04 and semiconductor cap layer 05 in acid etching liquid is low
In 10nm/min.
E, on semiconductor cap layer 05, conductive film layer is deposited and in the method for wet etching directly on the active layer
Patterning is carried out as source class 06-1 and drain electrode 06-2.
Specifically, material used in conductive film layer is aluminium, copper, molybdenum, titanium, silver, simple substance or alloy.
It should be noted that the thickness range of conductive film layer is in the range of 100nm-3000nm, its specific thickness and structure
Situation about being not limited into material in embodiment.
It should be noted that the concrete structure of thin film transistor (TFT) can use the thin film transistor (TFT) of different types of structure.Only
The oxide semiconductor protective layer material of one layer of embodiment 1 on channel layer, is prepared under source-drain electrode, belongs to this hair
Bright technology.
Metal oxide thin-film transistor of the preparation method of the present invention based on back of the body channel-etch type structure, due to the oxidation
Thing semiconductor protection layer material includes Zr (zirconium), Si (silicon), Hf (hafnium) and one kind in W (tungsten) or any two or more member
Element so that the oxide semiconductor material has the advantages of antiacid etching type is strong so that the oxide semiconductor material, which has, to be changed
Learn stability it is preferable and it is antiacid etching property it is strong the advantages that.The metal oxide semiconductor films being prepared by the method for the present invention are brilliant
Technique is simple for body pipe thin film transistor (TFT) more of the prior art, and can reduce acid etching liquid in source-drain electrode etching process
Damage, can effectively reduce production cost, suitable industrial production to caused by thin film transistor (TFT) carries on the back raceway groove.
Embodiment 3
A kind of oxide semiconductor thin-film transistor, as shown in Figures 1 to 6, its preparation process are as follows：First in glass lined
The Al-Nd alloy firms that a tunic thickness is 300nm are manufactured by the method for sputtering on bottom 01, and use photoetching process by metal film
Pattern layers are grid 02.Then anodic oxidation is carried out to Al-Nd alloy firms, forms the aluminum oxide that a layer thickness is 200nm,
As the IGZO that the deposit thickness of gate insulation layer 03. is 40nm as active layer, and then deposit thickness is 5nm (ZnO)x
(ZrO2)yAs semiconductor cap layer, wherein x+y=1.Then a PR techniques are used by channel layer and semiconductor cap layer figure
Case.One layer of 300nm Al films are prepared by the method for sputtering on active layer film, the back of the body is prepared by the method for wet etching
Tunnel oxide thin-film transistor structure.
Table 1 shows (ZnO) of different proportionx(ZrO2)yInfluence of the oxide semiconductor protective layer to thin film transistor (TFT).
Table 1
Metal oxide thin-film transistor of the preparation method of the present invention based on back of the body channel-etch type structure, due to the oxidation
Thing semiconductor protection layer material includes Zr (zirconium), Si (silicon), Hf (hafnium) and one kind in W (tungsten) or any two or more member
Element so that the oxide semiconductor material has the advantages of antiacid etching type is strong so that the oxide semiconductor material, which has, to be changed
Learn stability it is preferable and it is antiacid etching property it is strong the advantages that.The metal oxide semiconductor films being prepared by the method for the present invention are brilliant
Technique is simple for body pipe thin film transistor (TFT) more of the prior art, and can reduce acid etching liquid in source-drain electrode etching process
Damage, can effectively reduce production cost, suitable industrial production to caused by thin film transistor (TFT) carries on the back raceway groove.
Embodiment 4
A kind of thin film transistor (TFT), as shown in figure, its preparation process are as follows：Pass through sputtering in glass substrate 01 first
Method manufactures the Al-Nd alloy firms that a tunic thickness is 300nm, and uses photoetching process by the patterned grid of metallic diaphragm
02.Then anodic oxidation is carried out to Al-Nd alloy firms, the aluminum oxide that a layer thickness is 200nm is formed, as gate insulation layer
03.(TiOs of the IGZO that deposit thickness is 40nm as active layer, and then one layer of 5nm of deposition2)0.7(SiO2)0.3As partly leading
Body protective layer.Then a PR techniques are used by channel layer and semiconductor protection pattern layers.By splashing on active layer film
The method penetrated prepares one layer of 300nm Al films, and back of the body tunnel oxide thin-film transistor structure is prepared by the method for wet etching.
In the present embodiment, from figure 7 it can be seen that with above-mentioned (TiO2)0.7(SiO2)0.3Film is as semiconductor cap layer
05 TFT transfer characteristic curve.Mobility is 13.3cm as seen from Figure 72/ Vs, threshold voltage are 1.3V oxide
Thin film transistor (TFT) has outstanding device performance.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (9)
1. a kind of oxide semiconductor thin-film transistor, it is characterised in that be provided between channel layer and source-drain electrode and partly lead
Body protective layer,
The semiconductor cap layer is (MO)x(NO)y, wherein, 0.1<X≤0.8,0.2≤y<0.9, and x+y=1；Wherein, M is
At least one of Zr, Si, Hf and W element, at least one of N Zn, Ga, Ag, Ti and Cu element.
2. oxide semiconductor thin-film transistor according to claim 1, it is characterised in that the semiconductor cap layer
Thickness is 2nm~20nm.
3. oxide semiconductor thin-film transistor according to claim 2, it is characterised in that the semiconductor cap layer
Thickness is 2nm~10nm.
4. oxide semiconductor thin-film transistor according to claim 1, it is characterised in that the semiconductor cap layer
Carrier concentration is 1 × 1016cm-3To 1 × 1019cm-3Between.
5. oxide semiconductor thin-film transistor according to claim 4, it is characterised in that the semiconductor cap layer is adopted
It is prepared with physical gas-phase deposition, chemical vapor deposition method or solution preparation process.
6. oxide semiconductor thin-film transistor according to claim 1, it is characterised in that the semiconductor cap layer with
Active layer carries out patterning operations commonly through single exposure technique.
7. oxide semiconductor thin-film transistor according to claim 6, it is characterised in that the material of the channel layer is
Metal oxide semiconductor material, the metal oxide semiconductor material contain at least one of In, Sn, Cu, Ti and Zn
Element；
The active layer is single thin film structure or multi-layer film structure.
8. oxide semiconductor thin-film transistor according to claim 1, it is characterised in that the oxide semiconductor is thin
Film transistor is provided with grid, channel layer, gate insulation layer and source-drain electrode, and the gate insulation layer is located at the grid and the ditch
Between channel layer, the semiconductor cap layer is between the channel layer and the source-drain electrode.
9. oxide semiconductor thin-film transistor according to claim 8, it is characterised in that the pattern of the source-drain electrode
Change operation using wet etching carry out, the etching liquid be sulfuric acid, hydrochloric acid, acetic acid, phosphoric acid, nitric acid and aluminium etching liquid at least
It is a kind of.
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