CN103794652B - Metal-oxide semiconductor thin film transistor and manufacturing method thereof - Google Patents
Metal-oxide semiconductor thin film transistor and manufacturing method thereof Download PDFInfo
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- CN103794652B CN103794652B CN201410061608.5A CN201410061608A CN103794652B CN 103794652 B CN103794652 B CN 103794652B CN 201410061608 A CN201410061608 A CN 201410061608A CN 103794652 B CN103794652 B CN 103794652B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 79
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 79
- 239000010409 thin film Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000007788 liquid Substances 0.000 claims abstract description 44
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000009413 insulation Methods 0.000 claims abstract description 16
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 13
- 239000011701 zinc Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 103
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 76
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 71
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 50
- 238000002360 preparation method Methods 0.000 claims description 31
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 28
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 27
- 239000001117 sulphuric acid Substances 0.000 claims description 19
- 235000011149 sulphuric acid Nutrition 0.000 claims description 19
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 18
- 238000005240 physical vapour deposition Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 238000001556 precipitation Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000003980 solgel method Methods 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 11
- AZQFNUBWESKYAJ-UHFFFAOYSA-N oxygen(2-) tantalum(5+) tin(4+) Chemical compound [Sn+4].[O-2].[Ta+5] AZQFNUBWESKYAJ-UHFFFAOYSA-N 0.000 abstract 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000009776 industrial production Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 111
- 239000004973 liquid crystal related substance Substances 0.000 description 20
- 229920001621 AMOLED Polymers 0.000 description 18
- 238000002161 passivation Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 2
- 229940075624 ytterbium oxide Drugs 0.000 description 2
- VAJVDSVGBWFCLW-UHFFFAOYSA-N 3-Phenyl-1-propanol Chemical compound OCCCC1=CC=CC=C1 VAJVDSVGBWFCLW-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- 241000222065 Lycoperdon Species 0.000 description 1
- DYUQAZSOFZSPHD-UHFFFAOYSA-N Phenylpropyl alcohol Natural products CCC(O)C1=CC=CC=C1 DYUQAZSOFZSPHD-UHFFFAOYSA-N 0.000 description 1
- 241000768494 Polymorphum Species 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910002070 thin film alloy Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Provided are a metal-oxide semiconductor thin film transistor and a manufacturing method of the metal-oxide semiconductor thin film transistor. The manufacturing method comprises the steps that a, a grid electrode is manufactured on a substrate; b, a first insulation thin film is deposited as a grid electrode insulation layer; c, a tin-tantalum oxide thin film without zinc is deposited on the grid electrode insulation layer and is imaged as an active layer; d, a metal layer is deposited on the active layer and is imaged as a source drain electrode image. The active layer is made of tin-tantalum oxide semiconductor materials without zinc, the etching speed of the tin-tantalum oxide semiconductor materials in hydrofluoric acid is larger than 10 nm/min, and the etching speed of the tin-tantalum oxide semiconductor materials in at least one of sulfuric acid, hydrochloric acid and aluminum etching liquid is not larger than 5 nm/min. The tin-tantalum oxide active layer can reduce damage to a back channel in the source drain electrode etching process, the product is stable, and the metal-oxide semiconductor thin film transistor and the manufacturing method are suitable for industrial production.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of metal oxide semiconductor films transistor and its system
Preparation Method.
Background technology
Thin film transistor (TFT)（TFT, Thin Film Transistor）It is mainly used in control and drives liquid crystal display
（LCD, Liquid Crystal Display）, Organic Light Emitting Diode（OLED, Organic Light-Emitting
Diode）The sub-pixel of display, is one of most important electronic device in flat display field.
Metal-oxide TFT（MOTFT）Not only there is higher mobility（5 ~ 50Left and right）, and make
Make process is simple, manufacturing cost is relatively low, also with excellent large-area uniformity.Therefore MOTFT technologies are just standby since the birth
Attracted attention by industry.
The structure that at present MOTFT is mainly used has back of the body channel etching structure and etching barrier layer structure.Back of the body channel etching knot
Structure is the deposited metal layer on active layer after active layer is generated, and graphically as source-drain electrode.And etching barrier layer
Structure is after active layer is generated, first to make one layer of etching barrier layer, then deposited metal layer and graphical conduct on
Source-drain electrode.
The stability of the MOTFT of etching barrier layer structure is relatively good, and at present the configuration thin film transistor has been commercialized.But
Because it needs to increase extra lithography mask version making etching barrier layer, cause complex process, cost of manufacture is high.
Back of the body channel etching structure fabrication processes are relatively simple and identical with traditional non-crystalline silicon processing technology, equipment investment
It is all less expensive with production cost.The structure is considered as, and metal oxide thin-film transistor realizes scale of mass production and can be wide
The general inevitable development direction for using.But when etching source-drain electrode on active layer, either using dry etching or wet method
Etching all can occur carrying on the back the problem that raceway groove is damaged：During using dry etching, metal-oxide is easily subject to ion dam age, causes sudden and violent
The channel surface of dew has carrier traps to generate and oxygen vacancy concentration increases so that device stability is poor；Carved using wet method
During erosion, because active layer is all more sensitive to most of acidity etching liquid, it is easy to be corroded in etching process, so as to also will
Greatly affect device performance.The MOTFT of the structure cannot also realize at present commercialization.
Therefore, the oxide thin film transistor in the etching process to source-drain electrode, to carrying on the back channel-etch type structure
It is very crucial that back of the body raceway groove carries out effective protection.Therefore, it is not enough for prior art, there is provided a kind of etch resistance is strong, in preparation process
In be capable of metal oxide thin-film transistor and preparation method thereof of effective protection back of the body raceway groove to overcome prior art not enough very
It is necessary.
The content of the invention
It is an object of the invention to provide a kind of preparation method of metal oxide semiconductor films transistor, prepared gold
Category oxide semiconductor thin-film transistor active layer etch resistant function admirable, can effective protection the back of the body raceway groove prevent carry on the back raceway groove damage
Wound so that the stability of metal oxide semiconductor films transistor is improved, and properties of product are more preferable.
The above-mentioned purpose of the present invention is realized by following technological means.
A kind of preparation method of metal oxide semiconductor films transistor, comprises the steps,
A. prepare on substrate and patterned metal conductive layer is used as grid；
B. the first insulation film is deposited on the metal conducting layer as gate insulator；
C. deposited on the gate insulator as raw material using the stannum tantalum pentoxide semi-conducting material without zinc and do not contained
The stannum tantalum oxide thin film of zinc simultaneously graphically forms active layer；
Etch rate of the stannum tantalum oxide thin film in Fluohydric acid. is more than 10nm/min and in sulphuric acid, hydrochloric acid or aluminum
Etch rate in the etching liquid of the one or more than one in etching liquid is less than or equal to 5nm/min；
D. the Direct precipitation metal level and method that etches in a wet process is directly enterprising in the active layer on the active layer
Row is graphically as source-drain electrode.
The preparation method of the metal oxide semiconductor films transistor of the present invention can not contain the preparation of passivation layer, may be used yet
Further on the source-drain electrode to deposit the second insulation film as passivation layer.
First insulating layer of thin-film of above-mentioned steps b can be that single layer dielectrics thin film, or more than one layer of multilamellar are exhausted
Edge thin film.
The graphical of above-mentioned steps c adopts Fluohydric acid. as etching liquid, and the concentration of Fluohydric acid. is 0.5% ~ 51%.
Graphical concrete in above-mentioned steps d adopt sulphuric acid, hydrochloric acid either aluminum etching liquid any one or one kind with
On etching liquid, the concentration range of the sulphuric acid is 70% ~ 96%, and the concentration range of the hydrochloric acid is 30% ~ 38%；The aluminum etching
Liquid includes nitric acid, phosphoric acid and acetic acid；The concentration range of the nitric acid is 1% ~ 10%, and the concentration range of the phosphoric acid is 65% ~ 75%,
The concentration range of the acetic acid is 5% ~ 15%.
Above-mentioned steps c are specifically using physical vapour deposition (PVD) or sol-gel process deposition stannum tantalum oxide thin film.
Tantalum oxide accounts for the overall percentage by weight of the stannum tantalum pentoxide and is in above-mentioned stannum tantalum pentoxide semi-conducting material
0.1%~20%。
In above-mentioned stannum tantalum pentoxide semi-conducting material tantalum oxide account for the overall percentage by weight of the stannum tantalum pentoxide be 1% ~
10%。
The thickness of above-mentioned active layer is 20nm ~ 200nm, and the carrier concentration of the active layer is less than 1018cm–3。
It is a further object of the present invention to provide a kind of metal oxide semiconductor films transistor, the metal-oxide is partly led
Body thin film transistor is prepared from by method produced above, the active layer etch resistance energy of the metal oxide thin-film transistor
It is excellent, effective protection back of the body raceway groove can prevent from carrying on the back raceway groove damage in the preparation process for prepare source-drain electrode so that prepared
The stability of metal oxide semiconductor films transistor is improved, and properties of product are more preferable.
The preparation method of the metal oxide semiconductor films transistor that the present invention is provided, comprises the steps：A. in lining
Prepare on bottom and patterned metal conductive layer is used as grid；B. the first insulation film is deposited on the metal conducting layer as grid
Pole insulating barrier；C. deposited not on the gate insulator as raw material using the stannum tantalum pentoxide semi-conducting material without zinc
Stannum tantalum oxide thin film containing zinc simultaneously graphically forms active layer using Fluohydric acid. as etching liquid；The stannum tantalum oxide thin film
Etch rate in Fluohydric acid. is more than 10nm/min and the one or more than one in sulphuric acid, hydrochloric acid or aluminum etching liquid
Etching liquid in etch rate be less than or equal to 5nm/min；D. the Direct precipitation metal level on the active layer, then using sulfur
The method that the etching liquid of at least one or more than one in acid, hydrochloric acid or aluminum etching liquid is etched in a wet process is directly described
It is patterned as source-drain electrode on active layer.Metal oxidation of the preparation method of the present invention based on back of the body channel-etch type structure
Thing semiconductor thin-film transistor, introduces stannum tantalum pentoxide as active layer.The stannum tantalum pentoxide active layer can greatly reduce
Thin film transistor (TFT) back of the body raceway groove is caused damage during etching source-drain electrode.The metal oxidation being prepared by the method for the present invention
The operation of the stability thin film transistor (TFT) more of the prior art of thing semiconductor thin-film transistor is relatively simple, reduces cost,
The performance of device, suitable commercial production are not affected again simultaneously.
Description of the drawings
Fig. 1 is the schematic diagram of deposition and patterned metal conductive layer as grid of the embodiment of the present invention；
Fig. 2 is that the embodiment of the present invention deposits the first dielectric film as the signal of gate insulator on metal conducting layer
Figure；
Fig. 3 is the schematic diagram of the deposition active layer of the embodiment of the present invention；
Fig. 4 is the schematic diagram of the deposited metal layer of the embodiment of the present invention；
Fig. 5 is the schematic diagram of the graphical source-drain electrode of the embodiment of the present invention；
Fig. 6 is the schematic diagram of the making passivation layer of the embodiment of the present invention；
Fig. 7 be 30nm thickness stannum tantalum pentoxide in aluminic acid situation schematic diagram over time；
Fig. 8 is the metal oxide semiconductor films transistor transfer characteristic at different temperatures of the embodiment of the present invention 3
Curve；
Fig. 9 is the metal oxide semiconductor films transistor transfer characteristic at different temperatures of the embodiment of the present invention 3
Curve；
Figure 10 is the metal oxide semiconductor films transistor transfer characteristic at different temperatures of the embodiment of the present invention 3
Curve；
In Fig. 1 to Fig. 6, including：
Substrate 01,
Grid 02,
First insulation film 03,
Active layer 04,
Metal level 05,
Source-drain electrode 06,
Passivation layer 07.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is described further with example, but the scope of protection of present invention not office
It is limited to the scope of embodiment.
Embodiment 1.
A kind of metal oxide semiconductor films transistor, as shown in figure 5, the metal oxide semiconductor films transistor
To carry on the back channel etching structure, with substrate 01, grid 02, the first dielectric film 03, active layer 04, source-drain electrode 06.
Its active layer 04 is the stannum tantalum oxide thin film being prepared from using the stannum tantalum pentoxide semi-conducting material without zinc.
Etch rate of the stannum tantalum pentoxide semi-conducting material in Fluohydric acid. is more than 10nm/min, and in sulphuric acid, hydrochloric acid or aluminum etching
Etch rate at least one in liquid is less than or equal to 5nm/min.Specifically, the thickness of active layer 04 is 20nm ~ 200nm.
Preferably, tantalum oxide accounts for the overall percentage by weight of the stannum tantalum pentoxide and is in stannum tantalum pentoxide semi-conducting material
0.1% ~ 20%, with 1% ~ 10% more preferably.
The metal oxide semiconductor films transistor is prepared from using following steps, as shown in Figures 1 to 5, specifically
Comprise the steps：
A. prepare on substrate 01 and patterned metal conductive layer is used as grid 02；
B. the first insulation film 03 is deposited on metal conducting layer as gate insulator；
C. deposited on gate insulator without zinc as raw material using the stannum tantalum pentoxide semi-conducting material without zinc
Stannum tantalum oxide thin film simultaneously graphically forms active layer 04, graphical specifically using Fluohydric acid. as etching liquid, Fluohydric acid. it is dense
Spend for 0.5% ~ 51%；
Etch rate of the stannum tantalum oxide thin film in Fluohydric acid. is more than 10nm/min and in sulphuric acid, hydrochloric acid or aluminum etching
Etch rate in the etching liquid of the one or more than one in liquid is less than or equal to 5nm/min；
D. the Direct precipitation metal level on active layer 04, the method for then etching in a wet process is directly carried out on active layer 04
Graphically as source-drain electrode 06.
Wherein the patterned process of source-drain electrode 06 specifically using sulphuric acid, hydrochloric acid or aluminum etching liquid any one or
More than one etching liquid etching is formed, and the concentration range of sulphuric acid is 70% ~ 96%, and the concentration range of hydrochloric acid is 30% ~ 38%；Aluminum is carved
Erosion liquid includes nitric acid, phosphoric acid and acetic acid etc., and the wherein concentration range of nitric acid is 1% ~ 10%, and the concentration range of phosphoric acid is 65% ~ 75%,
The concentration range of acetic acid is 5% ~ 15%.
Due to use in the patterning process of source-drain electrode 06 sulphuric acid, hydrochloric acid either aluminum etching liquid or by sulphuric acid,
The etching liquid that any two or more liquid in hydrochloric acid and aluminum etching liquid is constituted, because stannum tantalum oxide thin film and stannum tantalum are aoxidized
Etch rate of the thing semi-conducting material in sulphuric acid, hydrochloric acid or aluminum etching liquid is less than or equal to 5nm/min, therefore in source-drain electrode 06
In patterning process, the damage to active layer 04 is very little.
The metal oxide semiconductor films transistor of the present invention, can be used for liquid crystal display LCD (Liquid
Crystal Display) and active matrix organic light-emitting diode display AMOLED（Active Matrix/Organic
Light Emitting Diode）Field.
The metal oxide semiconductor films transistor of the present invention, using back of the body channel etching structure, its active layer 04 is adopted
Stannum tantalum pentoxide semi-conducting material without zinc is prepared from.Due to using sulfur in the patterning process of source-drain electrode 06
Acid, hydrochloric acid or aluminum etching liquid, due to stannum tantalum pentoxide semi-conducting material in sulphuric acid, hydrochloric acid or aluminum etching liquid at least one
Etch rate in kind is less than or equal to 5nm/min, and the time that source-drain electrode 06 is graphically etched is usually 30 ~ 90 seconds, here
In preparation time section, the etching liquid that source-drain electrode 06 is graphically adopted will not cause serious etching to tantalum stannum oxide.
Due to the etch resistant characteristic of stannum tantalum pentoxide, using the stannum tantalum pentoxide as active layer 04, in etching source-drain electrode
During 06, the etching liquid that source-drain electrode 06 is graphically adopted is difficult to carry out the stannum tantalum pentoxide as back of the body raceway groove part
Etching, therefore the damage caused to thin film transistor (TFT) back of the body raceway groove during etching source-drain electrode 06 can be greatly reduced.This
The operation of bright metal oxide semiconductor films transistor is relatively simple, reduces cost, while and not affecting the property of device
Can, suitable commercial production.
Additionally, the metal oxide semiconductor films transistor fabrication processes of the present invention are simple, it is possible to achieve film crystal
Pipe drives backboard High precision, low-cost production.
It should be noted that the preparation method of the metal oxide semiconductor films transistor of the present invention can also increase preparation
The step of passivation layer, that is, increase step e. and the second insulation film is deposited on source-drain electrode 06 as passivation layer 07, so that it may be obtained
The device of structure as shown in Figure 6.
Embodiment 2.
A kind of metal oxide semiconductor films transistor, as shown in fig. 6, the metal oxide semiconductor films transistor
To carry on the back channel etching structure, with substrate 01, grid 02, the first dielectric film 03, active layer 04, source-drain electrode 06 and passivation layer
07。
The preparation method of the metal oxide semiconductor films transistor, as shown in Figures 1 to 6, specifically includes following
Step.
A. prepare on substrate 01 and patterned metal conductive layer is used as grid 02.
Specifically, substrate 01 is set to the glass substrate 01 with cushion or with water oxygen barrier layer in step a
Flexible substrate 01.
When substrate 01 is flexible substrate 01, flexible substrate 01 is specifically configured to PEN（PEN）, it is poly-
PETP（PET）, polyimides（PI）Or metal forming flexible substrate 01.
Specifically, prepare on substrate 01 in step a and the metal that used of patterned metal conductive layer be aluminum, copper, molybdenum,
Titanium, silver, gold, tantalum, tungsten, chromium simple substance or aluminium alloy.
The thickness of metal conducting layer is set to 100nm to 2000nm.Metal conducting layer is used as metal-oxide film crystal
Tube grid 02, concretely monolayer aluminium film, Copper thin film, molybdenum film, titanium film, Ag films, gold thin film, tantalum films, W film,
Chromium thin film or aluminum alloy films；Or the thin film more than two-layer being made up of above single layer metal firms.
After completing metal conducting layer making, into step b.
B. the first insulation film is deposited on metal conducting layer as gate insulator.
Specifically, the thickness of the first insulation film in step b is the nm of 50nm to 500.
First insulation film is the single thin layer of silicon oxide, silicon nitride, aluminium oxide, tantalum pentoxide or ytterbium oxide insulation film
Thin film more than film, or the two-layer being made up of the combination in any of above material.
C. stannum tantalum oxide thin film of the deposition without zinc is simultaneously graphical as active layer 04 on gate insulator.
Specifically, step c specifically adopt physical vaporous deposition deposit thickness for the stannum tantalum pentoxide of 20nm ~ 200nm it is thin
Film.It is 0.1% ~ 20% that tantalum oxide accounts for the overall percentage by weight of the stannum tantalum pentoxide in stannum tantalum pentoxide semi-conducting material.
Graphical concrete in step c adopts Fluohydric acid. that concentration is 0.5% ~ 51% as etching liquid and with etch rate
Speed etching more than 10nm/min is formed.
D. the deposited metal layer 05 on active layer 04, then graphically as the figure of source-drain electrode 06.
Specifically, the metal that deposited metal layer 05 is used in step d is aluminum, copper, molybdenum, titanium simple substance, or by above metal
Alloy material of the simple substance as main body.Metal level 05 is monolayer aluminium film, Copper thin film, molybdenum film, titanium film or by above metal
Simple substance as main body alloy material film, or the thin film more than two-layer being made up of above single layer metal firms.Metal level 05
Thickness be 100 nm ~ 2000 nm.
Graphical concrete any one etching liquid for adopting sulphuric acid, hydrochloric acid or aluminum etching liquid in step d is to etch speed
Speed of the rate less than or equal to 10nm/min is performed etching and formed, and the concentration range of sulphuric acid is 70% ~ 96%, and the concentration range of hydrochloric acid is
30%~38%；Aluminum etching liquid includes nitric acid, phosphoric acid and acetic acid etc., and the wherein concentration range of nitric acid is 1% ~ 10%, the concentration model of phosphoric acid
Enclose for 65% ~ 75%, the concentration range of acetic acid is 5% ~ 15%.
Finally, into step e.
E. the second insulation film is deposited on source, drain electrode as passivation layer 07.
The thickness of passivation layer 07 is 50 nm ~ 2000 nm.Passivation layer 07 be silicon oxide, silicon nitride, aluminium oxide, ytterbium oxide,
Polyimides, photoresist, phenylpropyl alcohol cyclobutane or polymethyl methacrylate single thin film, or by any group of above material
Close the thin film more than two-layer for constituting.
Metal oxide semiconductor films transistor of the preparation method of the present invention based on back of the body channel-etch type structure, introduces
Stannum tantalum pentoxide is used as active layer 04.The stannum tantalum pentoxide active layer 04 can greatly reduce the process of etching source-drain electrode 06
In the damage that causes of raceway groove is carried on the back to thin film transistor (TFT).The metal oxide semiconductor films transistor being prepared by the method for the present invention
Stability thin film transistor (TFT) more of the prior art operation it is relatively simple, cost is reduced, while and not affecting device
Performance, suitable commercial production.
The metal oxide semiconductor films transistor made by the method, can be used for liquid crystal display LCD
(Liquid Crystal Display) and active matrix organic light-emitting diode show AMOLED（Active Matrix/
Organic Light Emitting Diode）Field.
Embodiment 3.
A kind of preparation method of metal oxide semiconductor films transistor, specifically includes following operation.
A. as shown in figure 1, using the SiO with 200 nm2The alkali-free glass of cushion is used as substrate 01.Using physics
Vapour deposition（Physical Vapor Deposition）Method is sequentially depositing Mo/Al/Mo three-layer metal thin film, and thickness is respectively
25 nm/100 nm/25 nm.It is graphically formed gate metal layer using photoetching process.
It should be noted that the thickness range of metal conducting layer is in the range of the nm of 100 nm to 2000, its concrete size can
Flexibly to arrange according to actual needs, the size of the present embodiment is not limited to.The constituent material of metal conducting layer is also not necessarily limited to this reality
Apply the situation of example.
B. as shown in Fig. 2 in patterned gate metal layer, using PECVD (Plasma Enhanced
Chemical Vapor Deposition) deposition the first dielectric film 03, the first dielectric film 03 by 300 nm SiNxWith 30 nm
SiO2Lamination is formed as gate insulator.It should be noted that the thickness range of 03 layer of the first dielectric film in 50 nm extremely
Its concrete size can be arranged flexibly according to actual needs in the range of 500 nm, be not limited to the size of the present embodiment.First insulation
The constituent material that 03 layer of film is also not necessarily limited to the case for this embodiment.
C. as shown in figure 3, depositing 40 nm stannum tantalum oxide thin films as active layer 04 using physical vaporous deposition, its
Ta in the constituent material of middle stannum tantalum oxide thin film2O5With SnO2According to percentage by weight with 1%：The proportions of 99% %.
Adopt again concentration be 10% Fluohydric acid. as etching liquid and with the speed of etch rate 12nm/min to stannum tantalum pentoxide
Thin film is patterned.
It should be noted that the thickness range of active layer 04 is in the range of the nm of 20 nm to 200, its concrete size can be with root
According to flexibly setting is actually needed, the size of the present embodiment is not limited to.The constituent material of active layer 04 is also not necessarily limited to the present embodiment
Situation.
D. as shown in figure 4, preparing Mo metal levels 05 using physical vapour deposition (PVD), thickness is 300nm.And using 14%
H2O2The phosphoric acid of the acetic acid+70% of the nitric acid+10% of+1% potassium hydroxide+5% etches Mo as wet etching medicinal liquid.Using this
Mo is graphically formed method source-drain electrode 06.
Fig. 7 shows the stannum tantalum pentoxide of the 30nm thickness situation over time in aluminic acid, and Lycoperdon polymorphum Vitt is rectangular in figure
The fritter of shape is stannum tantalum oxide thin film, and thickness is 30nm；Two " T " shape for Mo electrodes, thickness is 300nm.From figure
In as can be seen that in aluminum etching liquid, stannum tantalum pentoxide was just etched away through the immersion of 750 seconds, calculates etch rate and is
2.4 nm/min, show that stannum tantalum pentoxide has good etch resistant.And the Mo of 300nm was just carved at 250 seconds, calculate
Etch rate is 72 nm/min.
E. using the SiO that PECVD deposit thickness is 300 nm2As passivation layer 07.Complete metal-oxide semiconductor (MOS) thin
The making of film transistor.
To being tested by the performance of the metal oxide semiconductor films transistor prepared by the method for the present invention, should
The active layer 04 of metal oxide semiconductor films transistor electron mobility at room temperature is 0.59 cm2 V−1 s−1,
Electron mobility under 150 degrees Celsius is 0.84 cm2 V−1 s−1, its transfer characteristic curve under room temperature and 150 degrees Celsius is such as
Shown in Fig. 8.
The metal oxide semiconductor films transistor made by the method, can be used for liquid crystal display LCD
(Liquid Crystal Display) and active matrix organic light-emitting diode show AMOLED（Active Matrix/
Organic Light Emitting Diode）Field.
Metal oxide semiconductor films transistor of the preparation method of the present invention based on back of the body channel-etch type structure, introduces
Stannum tantalum pentoxide is used as active layer 04.The stannum tantalum pentoxide active layer 04 can greatly reduce the process of etching source-drain electrode 06
In the damage that causes of raceway groove is carried on the back to thin film transistor (TFT).The metal oxide semiconductor films transistor being prepared by the method for the present invention
Stability thin film transistor (TFT) more of the prior art operation it is relatively simple, cost is reduced, while and not affecting device
Performance, suitable commercial production.
It should be noted that the size being related in the present embodiment, ratio are not intended to limit thin film transistor (TFT) of the present invention
Preparation technology, in actual fabrication process, user can be adjusted flexibly according to specific needs.
Embodiment 4.
The metal oxide semiconductor films transistor of the present embodiment, be with the difference of embodiment 3：Using physics
Vapour deposition process deposits 40 nm stannum tantalum oxide thin films as active layer 04, wherein in the constituent material of stannum tantalum oxide thin film
Ta2O5With SnO2According to percentage by weight with 5%：95% proportions, etch under 20% Fluohydric acid., and speed is 25nm/
min。
To being tested by the performance of the metal oxide semiconductor films transistor prepared by the method for the present invention, should
The active layer 04 of metal oxide semiconductor films transistor electron mobility at room temperature is 0.36 cm2 V−1 s−1,
Electron mobility under 150 degrees Celsius is 0.20 cm2 V−1 s−1, the electron mobility under 250 degrees Celsius is 0.31 cm2 V−1 s−1, its transfer characteristic curve under room temperature and 150 degrees Celsius is as shown in Figure 9.
The metal oxide semiconductor films transistor made by the method, can be used for liquid crystal display LCD
(Liquid Crystal Display) and active matrix organic light-emitting diode show AMOLED（Active Matrix/
Organic Light Emitting Diode）Field.
Metal oxide semiconductor films transistor of the preparation method of the present invention based on back of the body channel-etch type structure, introduces
Stannum tantalum pentoxide is used as active layer 04.The stannum tantalum pentoxide active layer 04 can greatly reduce the process of etching source-drain electrode 06
In the damage that causes of raceway groove is carried on the back to thin film transistor (TFT).The metal oxide semiconductor films transistor being prepared by the method for the present invention
Stability thin film transistor (TFT) more of the prior art operation it is relatively simple, cost is reduced, while and not affecting device
Performance, suitable commercial production.
Embodiment 5.
The metal oxide semiconductor films transistor of the present embodiment, be with the difference of embodiment 3：Using physics
Vapour deposition process deposits 40 nm stannum tantalum oxide thin films as active layer 04, wherein in the constituent material of stannum tantalum oxide thin film
Ta2O5With SnO2According to percentage by weight with 10%：90% proportions, etch under 20% Fluohydric acid., and speed is 20nm/
min。
To being tested by the performance of the metal oxide semiconductor films transistor prepared by the method for the present invention, should
The active layer 04 of metal oxide semiconductor films transistor electron mobility at room temperature is 0.48 cm2 V−1 s−1,
Electron mobility under 150 degrees Celsius is 1.41 cm2 V−1 s−1, the electron mobility under 250 degrees Celsius is 1.22 cm2 V−1 s−1, its transfer characteristic curve under room temperature and 150 degrees Celsius is as shown in Figure 10.
The metal oxide semiconductor films transistor made by the method, can be used for liquid crystal display LCD
(Liquid Crystal Display) and active matrix organic light-emitting diode show AMOLED（Active Matrix/
Organic Light Emitting Diode）Field.
Metal oxide semiconductor films transistor of the preparation method of the present invention based on back of the body channel-etch type structure, introduces
Stannum tantalum pentoxide is used as active layer 04.The stannum tantalum pentoxide active layer 04 can greatly reduce the process of etching source-drain electrode 06
In the damage that causes of raceway groove is carried on the back to thin film transistor (TFT).The metal oxide semiconductor films transistor being prepared by the method for the present invention
Stability thin film transistor (TFT) more of the prior art operation it is relatively simple, cost is reduced, while and not affecting device
Performance, suitable commercial production.
Embodiment 6.
A kind of metal oxide semiconductor films transistor, be with the difference of embodiment 3：Band used in step a
There is the Al of 50 nm2O3The flexible PET film of water oxygen barrier layer is used as substrate 01.Using physical vapour deposition (PVD)（Physical
Vapor Deposition）Method deposit thickness is 500 nm Cu thin film.And it is graphically formed grid gold using photoetching process
Category layer.
The metal oxide semiconductor films transistor made by the method, can be used for liquid crystal display LCD
(Liquid Crystal Display) and active matrix organic light-emitting diode show AMOLED（Active Matrix/
Organic Light Emitting Diode）Field.
Metal oxide semiconductor films transistor of the preparation method of the present invention based on back of the body channel-etch type structure, introduces
Stannum tantalum pentoxide is used as active layer 04.The stannum tantalum pentoxide active layer 04 can greatly reduce the process of etching source-drain electrode 06
In the damage that causes of raceway groove is carried on the back to thin film transistor (TFT).The metal oxide semiconductor films transistor being prepared by the method for the present invention
Stability thin film transistor (TFT) more of the prior art operation it is relatively simple, cost is reduced, while and not affecting device
Performance, suitable commercial production.
Apply example 7.
A kind of metal oxide semiconductor films transistor, be with the difference of embodiment 3：Band used in step a
There is the Si of 200 nm3N4The flexible PET film of water oxygen barrier layer is used as substrate 01.Using physical vapour deposition (PVD)（Physical
Vapor Deposition）Method deposit thickness is 200 nm ito thin films, and it is graphically formed grid using photoetching process
Metal level.
The metal oxide semiconductor films transistor made by the method, can be used for liquid crystal display LCD
(Liquid Crystal Display) and active matrix organic light-emitting diode show AMOLED（Active Matrix/
Organic Light Emitting Diode）Field.
Metal oxide semiconductor films transistor of the preparation method of the present invention based on back of the body channel-etch type structure, introduces
Stannum tantalum pentoxide is used as active layer 04.The stannum tantalum pentoxide active layer 04 can greatly reduce the process of etching source-drain electrode 06
In the damage that causes of raceway groove is carried on the back to thin film transistor (TFT).The metal oxide semiconductor films transistor being prepared by the method for the present invention
Stability thin film transistor (TFT) more of the prior art operation it is relatively simple, cost is reduced, while and not affecting device
Performance, suitable commercial production.
Embodiment 8.
The metal oxide semiconductor films transistor of the present embodiment, be with the difference of embodiment 3：Step d makes
Prepare Mo/Cu lamination metals with physical vapour deposition (PVD), thickness is respectively 25nm/2000nm, and using 90% sulphuric acid as wet method
Etching medicinal liquid, the Mo and Cu in etching stack metal.Had using the method and Mo/Cu is graphically formed metal film layer, should
Etch rate of the stannum tantalum oxide thin film in 90% sulphuric acid is 5nm/min.
The metal oxide semiconductor films transistor made by the method, can be used for liquid crystal display LCD
(Liquid Crystal Display) and active matrix organic light-emitting diode show AMOLED（Active Matrix/
Organic Light Emitting Diode）Field.
Metal oxide semiconductor films transistor of the preparation method of the present invention based on back of the body channel-etch type structure, introduces
Stannum tantalum pentoxide is used as active layer 04.The stannum tantalum pentoxide active layer 04 can greatly reduce the process of etching source-drain electrode 06
In the damage that causes of raceway groove is carried on the back to thin film transistor (TFT).The metal oxide semiconductor films transistor being prepared by the method for the present invention
Stability thin film transistor (TFT) more of the prior art operation it is relatively simple, cost is reduced, while and not affecting device
Performance, suitable commercial production.
Embodiment 9.
The metal oxide semiconductor films transistor of the present embodiment, be with the difference of embodiment 3：Step d makes
With physical vapour deposition (PVD) prepare Mo single-layer metals, thickness be 200 nm, and using 36% hydrochloric acid as etching liquid.Using the party
With Mo graphically to be formed metal film layer, the etch rate of the stannum tantalum oxide thin film in 36% hydrochloric acid is method
1.2nm/min。
The metal oxide semiconductor films transistor made by the method, can be used for liquid crystal display LCD
(Liquid Crystal Display) and active matrix organic light-emitting diode show AMOLED（Active Matrix/
Organic Light Emitting Diode）Field.
Metal oxide semiconductor films transistor of the preparation method of the present invention based on back of the body channel-etch type structure, introduces
Stannum tantalum pentoxide is used as active layer 04.The stannum tantalum pentoxide active layer 04 can greatly reduce the process of etching source-drain electrode 06
In the damage that causes of raceway groove is carried on the back to thin film transistor (TFT).The metal oxide semiconductor films transistor being prepared by the method for the present invention
Stability thin film transistor (TFT) more of the prior art operation it is relatively simple, cost is reduced, while and not affecting device
Performance, suitable commercial production.
Finally it should be noted that above example is only to illustrate technical scheme rather than the present invention is protected
The restriction of scope, although being explained in detail to the present invention with reference to preferred embodiment, one of ordinary skill in the art should manage
Solution, technical scheme can be modified or equivalent, without deviating from technical solution of the present invention essence and
Scope.
Claims (7)
1. a kind of preparation method of metal oxide semiconductor films transistor, it is characterised in that：Comprise the steps,
A. prepare on substrate and patterned metal conductive layer is used as grid；
B. the first insulation film is deposited on the metal conducting layer as gate insulator；
C. deposited on the gate insulator without zinc as raw material using the stannum tantalum pentoxide semi-conducting material without zinc
Stannum tantalum oxide thin film simultaneously graphically forms active layer；
Etch rate of the stannum tantalum oxide thin film in Fluohydric acid. is more than 10nm/min and in sulphuric acid, hydrochloric acid or aluminum etching
Etch rate in the etching liquid of one or more of liquid is less than or equal to 5nm/min；
D. the Direct precipitation metal level and method that etches in a wet process directly carries out figure on the active layer on the active layer
Shape is turned to source-drain electrode；
In the stannum tantalum pentoxide semi-conducting material tantalum oxide account for the overall percentage by weight of the stannum tantalum pentoxide be 0.1%～
20%.
2. the preparation method of metal oxide semiconductor films transistor according to claim 1, it is characterised in that：It is described
It is 1%～10% that tantalum oxide accounts for the overall percentage by weight of the stannum tantalum pentoxide in stannum tantalum pentoxide semi-conducting material.
3. the preparation method of metal oxide semiconductor films transistor according to claim 2, it is characterised in that：It is described
The graphical of step c adopts Fluohydric acid. as etching liquid, and the mass concentration scope of Fluohydric acid. is 0.5%～51%.
4. the preparation method of metal oxide semiconductor films transistor according to claim 3, it is characterised in that：It is described
Etching liquid more than any one of the graphical concrete employing sulphuric acid, hydrochloric acid or aluminum etching liquid in step d, the sulphuric acid
Mass concentration scope is 70%～96%, and the mass concentration scope of the hydrochloric acid is 30%～38%；The aluminum etching liquid includes
Nitric acid, phosphoric acid and acetic acid；The mass concentration scope of the nitric acid is 1%～10%, and the mass concentration scope of the phosphoric acid is
65%～75%, the mass concentration scope of the acetic acid is 5%～15%.
5. the preparation method of metal oxide semiconductor films transistor according to claim 4, it is characterised in that：It is described
Step c is specifically using physical vapour deposition (PVD) or sol-gel process deposition stannum tantalum oxide thin film.
6. the preparation method of metal oxide semiconductor films transistor according to claim 5, it is characterised in that：It is described
The thickness of active layer is 20nm～200nm, and the carrier concentration of the active layer is less than 1018cm–3。
7. a kind of metal oxide semiconductor films transistor, it is characterised in that：Using such as claim 1 to 6 any one institute
The method stated is prepared from.
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| CN106409686A (en) * | 2015-08-03 | 2017-02-15 | 中华映管股份有限公司 | Method of manufacturing oxide semiconductor film transistor |
| CN105321827A (en) * | 2015-10-26 | 2016-02-10 | 华南理工大学 | Preparation method for wet etching type oxide thin film transistor and prepared thin film transistor |
| CN105845695B (en) * | 2016-03-30 | 2018-12-28 | 深圳市华星光电技术有限公司 | Thin-film transistor display panel |
| CN106298879B (en) * | 2016-09-27 | 2019-08-30 | 广州新视界光电科技有限公司 | The production method of top-gated and vertical structure TFT |
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Effective date of registration: 20200220 Address after: 510640 Tianhe District, Guangdong, No. five road, No. 381, Co-patentee after: Guangzhou South China University of Technology Asset Management Co.,Ltd. Patentee after: Wang Lei Address before: 510641 Tianhe District, Guangdong, No. five road, No. 381, Patentee before: Wang Lei |
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