CN106409686A - Method of manufacturing oxide semiconductor film transistor - Google Patents
Method of manufacturing oxide semiconductor film transistor Download PDFInfo
- Publication number
- CN106409686A CN106409686A CN201510480819.7A CN201510480819A CN106409686A CN 106409686 A CN106409686 A CN 106409686A CN 201510480819 A CN201510480819 A CN 201510480819A CN 106409686 A CN106409686 A CN 106409686A
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- Prior art keywords
- oxide semiconductor
- semiconductor layer
- acid
- crystal
- state
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000000059 patterning Methods 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims description 64
- 239000002253 acid Substances 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 101
- 239000000463 material Substances 0.000 description 9
- 239000012528 membrane Substances 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 235000005979 Citrus limon Nutrition 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 244000248349 Citrus limon Species 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- IZHOVLXXYOZDLW-UHFFFAOYSA-N [O-2].[Al+3].[Sn+4] Chemical compound [O-2].[Al+3].[Sn+4] IZHOVLXXYOZDLW-UHFFFAOYSA-N 0.000 description 1
- YQNPZKUDUWSYQX-UHFFFAOYSA-N [O-2].[In+3].[Mo+4] Chemical compound [O-2].[In+3].[Mo+4] YQNPZKUDUWSYQX-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- HPXKRIGAFYUDQH-UHFFFAOYSA-N chromium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[Cr+3] HPXKRIGAFYUDQH-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- KBEVZHAXWGOKCP-UHFFFAOYSA-N zinc oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Zn++].[Sn+4] KBEVZHAXWGOKCP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
The invention discloses a method of manufacturing an oxide semiconductor film transistor. The method comprises the following steps of providing a patterning amorphous oxide semiconductor layer; carrying out polycrystallization on the patterning amorphous oxide semiconductor layer so as to form a patterning polycrystalline oxide semiconductor layer; forming a source electrode and a drain electrode on the patterning polycrystalline oxide semiconductor layer; providing a grid electrode; and providing brake dielectric layers between the grid electrode and the patterning polycrystalline oxide semiconductor layer, and the source electrode and the drain electrode. In the method, the patterning polycrystalline oxide semiconductor layer which has an etching solution resistance characteristic is firstly formed, and then the source electrode and the drain electrode are formed too. Therefore, the etching solution is used to form the source electrode and the drain electrode, the patterning polycrystalline oxide semiconductor layer is not damaged.
Description
Technical field
The present invention relates to a kind of method manufacturing oxide semiconductor thin-film electric crystal.
Background technology
Display panels comprise thin film transistor base, colored filter substrate and are located at membrane transistor
Layer of liquid crystal molecule between substrate and colored filter substrate.Multiple films are configured on thin film transistor base
Electric crystal, each membrane transistor comprises grid, gate dielectric layer, semiconductor layer, source electrode and drain electrode.
The material of semiconductor layer for example can comprise non-crystalline silicon, polysilicon, microcrystal silicon, monocrystalline silicon, organic semiconductor,
Oxide semiconductor or other suitable materials.
Compared to amorphous silicon membrane electric crystal, oxide semiconductor thin-film electric crystal has higher carrier and moves
Shifting rate (Mobility), and have preferably electrical performance.But after forming oxide semiconductor layer,
When forming source electrode and drain electrode, easily damage oxide semiconductor layer, and then lead to oxide semiconductor thin
Film electric crystal lost efficacy.Therefore, it is badly in need of a kind of manufacture oxide semiconductor thin-film electric crystal of improvement at present
Method, to solve the above problems.
Content of the invention
As stated in the Background Art, after forming oxide semiconductor layer, when forming source electrode and drain electrode,
Easily infringement oxide semiconductor layer, and then lead to oxide semiconductor thin-film electric crystal to lose efficacy.This be because
By being used etching solution meeting etching of oxides semiconductor layer when forming source electrode and drain electrode.Therefore, the present invention
Purpose be to provide a kind of method manufacturing oxide semiconductor thin-film electric crystal, its be initially formed against corrosion
Carve the patterned polysilicon state oxide semiconductor layer of liquid, re-form source electrode and drain electrode.Consequently, it is possible to make
When forming source electrode and drain electrode with etching solution, patterned polysilicon state oxide semiconductor layer will not be hurt, and
Can problem described in effectively solving prior art.
The present invention provides a kind of method manufacturing oxide semiconductor thin-film electric crystal, and it comprises：Figure is provided
Case non-crystal oxide semiconductor layer；Polycrystallization patterns non-crystal oxide semiconductor layer, to be formed
Patterned polysilicon state oxide semiconductor layer；Source electrode is formed on patterned polysilicon state oxide semiconductor layer
And drain electrode；Grid is provided；And provide positioned at grid and patterned polysilicon state oxide semiconductor layer, source
Gate dielectric layer between pole and drain electrode.
According to one embodiment of the invention, pattern non-crystal oxide semiconductor layer comprise amorphous state indium oxide,
Amorphous state indium gallium zinc, amorphous state indium gallium, amorphous state indium zinc oxide or a combination thereof.
According to one embodiment of the invention, polycrystallization patterning non-crystal oxide semiconductor layer step is included into
Row heat treatment, laser treatment, infra red treatment or its group.
According to one embodiment of the invention, the wherein temperature of heat treatment is more than or equal to 250 DEG C, patterns amorphous
State oxide semiconductor layer comprises amorphous state indium oxide.
According to one embodiment of the invention, patterning non-crystal oxide semiconductor layer step is provided to comprise：Shape
Become non-crystal oxide semiconductor layer；And non-crystal oxide semiconductor layer is carried out with the first lithographic and
One etch process, to form patterning non-crystal oxide semiconductor layer, wherein to non-crystal oxide half
Conductor layer carries out the first lithographic and the first etch process step comprises using the first acid etching non-crystal oxide
Semiconductor layer.
According to one embodiment of the invention, the wherein first acid comprises oxalic acid, citric acid, acetic acid or a combination thereof.
According to one embodiment of the invention, source electrode and leakage are formed on patterned polysilicon state oxide semiconductor layer
Pole step comprises：Form conductive layer；And conductive layer is carried out with the second lithographic and the second etch process, with
Form source electrode and drain electrode, wherein the second lithographic is carried out to conductive layer and the second etch process comprises to use second
Acid etching conductive layer, the pKa value of the second acid is more than the pKa value of the first acid.
According to one embodiment of the invention, the wherein second acid comprises hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, hydrogen fluorine
Acid or a combination thereof.
According to one embodiment of the invention, the wherein erosion to the second acid for the patterned polysilicon state oxide semiconductor layer
Etching speed is less than or equal to 20 nm/minute.
According to one embodiment of the invention, conductive layer is to the second acid and patterned polysilicon state oxide semiconductor layer
30 are more than or equal to the etching selectivity of the second acid：1.
Brief description
It is that above and other purpose, feature, advantage and the embodiment of the present invention can be become apparent, institute
Being described as follows of accompanying drawings：
Figure 1A-Fig. 1 I is the method illustrating the manufacture membrane transistor according to one embodiment of the invention in each technique
The generalized section in stage.
Fig. 2 is the film illustrating according to obtained by the method for the manufacture membrane transistor of another embodiment of the present invention
The generalized section of electric crystal.
Specific embodiment
As described in prior art, after forming oxide semiconductor layer, when forming source electrode and drain electrode,
Easily infringement oxide semiconductor layer, and then lead to oxide semiconductor thin-film electric crystal to lose efficacy.This be because
By being used etching solution meeting etching of oxides semiconductor layer when forming source electrode and drain electrode.Therefore, the present invention
Purpose be to provide a kind of method manufacturing oxide semiconductor thin-film electric crystal, its be initially formed against corrosion
Carve the patterned polysilicon state oxide semiconductor layer of liquid, re-form source electrode and drain electrode.Consequently, it is possible to make
When forming source electrode and drain electrode with etching solution, patterned polysilicon state oxide semiconductor layer will not be hurt, and
Can problem described in effectively solving prior art.
Figure 1A-Fig. 1 I is each work of the method illustrating the manufacture membrane transistor according to one embodiment of the invention
Skill stage generalized section.First, as shown in Figure 1A, form grid G on substrate 110.One
In embodiment, when forming grid G, form scan line (not illustrating) on substrate 110, grid G simultaneously
And scan line belongs to same patterned conductive layer.Grid G and scan line can be single or multiple lift structure, its
Material can be metal or alloy, for example molybdenum (Mo), chromium (Cr), aluminium (Al), neodymium (Nd), titanium (Ti), copper (Cu),
Silver-colored (Ag), golden (Au), zinc (Zn), indium (In), gallium (Ga), other suitable metals or combinations of the above.Lift
For example, available sputter (sputtering), evaporation (evaporation) technique or other film deposition techniques
Be initially formed layer of metal layer (not illustrating) on substrate 110, recycle lithography technique formed grid G with
Scan line.
As shown in Figure 1B, form gate dielectric layer 120 and cover grid G.In one embodiment, gate dielectric layer
120 also cover scan line.Gate dielectric layer 120 can be single or multiple lift structure, and its material can be organic dielectric
Material or Inorganic Dielectric Material.Organic dielectric materials can be pi (Polyimide, PI)；Inorganic dielectric
Material is, for example, silica, silicon nitride, silicon oxynitride or combinations of the above.Chemical gaseous phase for example can be utilized
Sedimentation (chemical vapor deposition, CVD) or other suitable film deposition techniques form lock and are situated between
Electric layer 120.
Then, as shown in Fig. 1 C- Fig. 1 D, formed patterning non-crystal oxide semiconductor layer PAOS in
On gate dielectric layer 120.Specifically, as shown in Figure 1 C, first code-pattern forms non-crystal oxide and partly leads
Body layer AOS is on gate dielectric layer 120.Available vacuum coating (such as sputter or evaporation) or wet
(such as rotary coating (spin coating), slot coated (slit coating) or ink jet printing (ink jet printing))
Form non-crystal oxide semiconductor layer AOS.In one embodiment, non-crystal oxide semiconductor layer AOS
Comprise amorphous state indium oxide, amorphous state indium gallium zinc, amorphous state indium gallium, amorphous state indium zinc oxide
Or a combination thereof.In other embodiments, non-crystal oxide semiconductor layer AOS comprise amorphous zinc oxide,
Amorphous zinc oxide tin, amorphous state chromium oxide tin, amorphous state gallium oxide tin, amorphous titanium peroxide tin, non-
Crystalline state cupric oxide aluminium, amorphous state strontium oxide strontia copper, amorphous state sulphur lanthana copper, other be suitable for materials or on
The combination stated.
Then, as shown in figure ip, non-crystal oxide semiconductor layer AOS is carried out with the first lithographic and
One etch process, to form patterning non-crystal oxide semiconductor layer PAOS.In one embodiment, scheme
Case non-crystal oxide semiconductor layer PAOS comprise amorphous state indium oxide, amorphous state indium gallium zinc,
Amorphous state indium gallium, amorphous state indium zinc oxide or a combination thereof.In one embodiment, the first lithographic and
One etch process comprises to form photoresistance (not illustrating) on non-crystal oxide semiconductor layer AOS；To photoresistance
It is exposed and developing process, to form patterning photoresistance；Baking patterning photoresistance；According to patterning light
Resistance, etching method for amorphous state oxide semiconductor layer AOS；And strip pattern photoresistance.In one embodiment,
Non-crystal oxide semiconductor layer AOS is carried out with the first lithographic and the first etch process step comprises to use
One acid etching non-crystal oxide semiconductor layer AOS.In one embodiment, the first acid comprises oxalic acid, lemon
Lemon acid, acetic acid or a combination thereof.In one embodiment, the pKa value of the first acid is more than or equal to 1.38.?
In one embodiment, the pKa value of the first acid is more than or equal to 4.74, even greater than or equal to 4.76.
Subsequently, as referring to figure 1e, polycrystallization patterning non-crystal oxide semiconductor layer PAOS, with shape
Become patterned polysilicon state oxide semiconductor layer PPOS.In one embodiment, patterned polysilicon state oxide
Semiconductor layer PPOS comprises polycrystalline state indium oxide, polycrystalline state indium gallium zinc, polycrystalline state indium gallium, many
Crystalline state indium zinc oxide or a combination thereof.In one embodiment, polycrystallization patterning non-crystal oxide semiconductor
Layer step comprises to be heat-treated (can use high temperature furnace), and the temperature of heat treatment is more than or equal to 250 DEG C, very
To more than or equal to 300 DEG C.In one embodiment, the temperature of heat treatment is less than or equal to 1400 DEG C, very
To less than or equal to 1000 DEG C.In one embodiment, patterning non-crystal oxide semiconductor layer comprise non-
Crystalline state indium oxide, its crystallization temperature is more than or equal to 250 DEG C, and the temperature of therefore heat treatment is more than or equal to
250℃.In one embodiment, patterning non-crystal oxide semiconductor layer comprises amorphous state indium gallium zinc,
Its crystallization temperature is more than or equal to 700 DEG C, and therefore the temperature of heat treatment is more than or equal to 700 DEG C.Real one
Apply in example, polycrystallization patterning non-crystal oxide semiconductor layer step comprises to carry out to be heat-treated, laser (laser)
Process, infrared ray (IR) process, other suitable techniques or a combination thereof, but not limited to this.
Next, as shown in Fig. 1 F- Fig. 1 G, forming source S and drain D and aoxidize in patterned polysilicon state
On thing semiconductor layer PPOS.Specifically, as shown in fig. 1f, first code-pattern formed conductive layer CL in
On patterned polysilicon state oxide semiconductor layer PPOS.Sputter, evaporation process for example can be utilized or other are thin
Film deposition technique forms conductive layer CL on patterned polysilicon state oxide semiconductor layer PPOS.Conductive layer
CL can be single or multiple lift structure, and its material can be metal or alloy, for example molybdenum, chromium, aluminium, neodymium, titanium,
Copper, silver, gold, zinc, indium, gallium, other suitable metals or combinations of the above.
Then, as shown in Figure 1 G, the second lithographic and the second etch process are carried out to conductive layer CL, with shape
Become source S and drain D.In one embodiment, when forming source S and drain D, form money simultaneously
Stockline (not illustrating) on patterned polysilicon state oxide semiconductor layer PPOS, source S, drain D and money
Stockline belongs to same patterned conductive layer.In one embodiment, the second lithographic and the second etch process comprise
Form photoresistance (not illustrating) on conductive layer CL；Photoresistance is exposed and developing process, to form pattern
Change photoresistance；Baking patterning photoresistance；According to patterning photoresistance, etch conductive layer CL；And strip pattern
Change photoresistance.In one embodiment, conductive layer CL is carried out with the second lithographic and the second etch process comprises to use
Second acid etching conductive layer CL.In one embodiment, the pKa value of the second acid is more than the pKa of the first acid
Value.In one embodiment, the second acid comprises hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, hydrofluoric acid or a combination thereof.
In one embodiment, the pKa value of the second acid is less than or equal to 3.15.In one embodiment, second acid
PKa value is less than or equal to 2.12.In one embodiment, the pKa value of the second acid be less than or equal to 0, or even
It is less than or equal to -1, -2 or -3.
It should be noted that in one embodiment, patterned polysilicon state oxide semiconductor layer PPOS is to
The etch-rate of diacid is less than or equal to 20 nm/minute, even less than or equal to 2 nm/minute.?
In one embodiment, conductive layer CL is to the second acid and patterned polysilicon state oxide semiconductor layer PPOS to the
The etching selectivity of diacid is more than or equal to 30：1, even greater than or equal to 300：1.Therefore, make
During with the second acid etching conductive layer CL to form source S and drain D, patterned polysilicon state will not be injured
Oxide semiconductor layer PPOS, thus the problem described in effectively solving prior art.
Then, as shown in fig. 1h, form protective layer 130 overlay pattern polycrystalline state oxide semiconductor layer
PPOS, source S and drain D.Protective layer 130 has the drain electrode that a contact hole 130a exposes a part
D.Protective layer 130 be single or multiple lift structure, its material can comprise organic dielectric material, inorganic dielectric material or
Combinations of the above, for example, can be utilized chemical vapour deposition technique or other suitable film deposition techniques to be formed and protect
Protective material layer (does not illustrate), recycles lithography technique to form contact hole 130a.
As shown in Figure 1 I, form pixel electrode PE on protective layer 130 and contact hole 130a (see Fig. 1 H)
Interior, make pixel electrode PE connect drain D.Pixel electrode PE can be single or multiple lift structure, its material
May be, for example, tin indium oxide, hafnium oxide, aluminum zinc oxide, aluminum oxide tin, gallium oxide zinc, indium oxide titanium,
Indium oxide molybdenum or other transparent conductive materials.For example can be first with sputtering process or other film deposition techniques shapes
Become layer of transparent conductive layer (not illustrating) on protective layer 130, recycle lithography technique to form picture element electricity
Pole PE.
Fig. 2 is to illustrate according to thin obtained by the method for the manufacture membrane transistor of another embodiment of the present invention
The generalized section of film electric crystal.The difference of Fig. 2 and Fig. 1 I is, Fig. 2 is top lock type membrane transistor,
Fig. 1 I is bottom lock type membrane transistor.As shown in Fig. 2 first, form patterning non-crystal oxide half
On substrate 110, then polycrystallization patterns non-crystal oxide semiconductor layer to conductor layer (not illustrating),
To form patterned polysilicon state oxide semiconductor layer PPOS.Then, formed source S and drain D in
On patterned polysilicon state oxide semiconductor layer PPOS.Form gate dielectric layer 120 overlay pattern polycrystalline state
Oxide semiconductor layer PPOS, source S and drain D.Form grid G on gate dielectric layer 120.Shape
Protective layer 130 is become to cover grid G.Form pixel electrode PE on protective layer 130, and pixel electrode
The contact hole (sign) that PE passes through protective layer 130 connects drain D.Above-mentioned steps refer to above-mentioned reality
Apply example.
In sum, because patterned polysilicon state oxide semiconductor layer has extremely low etching to the second acid
Speed, and conductive layer etching choosing to the second acid with patterned polysilicon state oxide semiconductor layer to the second acid
Select ratio high, therefore when with the second acid etching conductive layer to form source electrode and drain electrode, pattern will not be injured
Change polycrystalline state oxide semiconductor layer, thus the problem described in effectively solving prior art.
Although the present invention is open as above with embodiment, so it is not limited to the present invention, any
Those skilled in the art, without departing from the spirit and scope of the present invention, when can make various change with retouching,
Therefore protection scope of the present invention is worked as and is defined depending on as defined in claim.
Claims (10)
1. a kind of method manufacturing oxide semiconductor thin-film electric crystal is it is characterised in that described manufacture oxygen
The method of compound semiconductive thin film electric crystal comprises：
Patterning non-crystal oxide semiconductor layer is provided；
Non-crystal oxide semiconductor layer is patterned, to form patterned polysilicon state oxide described in polycrystallization
Semiconductor layer；
Source electrode and drain electrode are formed on described patterned polysilicon state oxide semiconductor layer；
Grid is provided；And
There is provided and be located at described grid and described patterned polysilicon state oxide semiconductor layer, described source electrode and institute
State the gate dielectric layer between drain electrode.
2. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 1, its feature exists
In described patterning non-crystal oxide semiconductor layer comprises amorphous state indium oxide, amorphous state indium gallium
Zinc, amorphous state indium gallium, amorphous state indium zinc oxide or a combination thereof.
3. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 1, its feature exists
In patterning non-crystal oxide semiconductor layer step described in described polycrystallization comprises to carry out being heat-treated, swashs
Light process, infra red treatment or a combination thereof.
4. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 3, its feature exists
In the temperature of described heat treatment is more than or equal to 250 DEG C, described patterning non-crystal oxide semiconductor layer
Comprise amorphous state indium oxide.
5. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 1, its feature exists
In, provide described patterning non-crystal oxide semiconductor layer step comprise：
Form non-crystal oxide semiconductor layer；And
First lithographic and the first etch process are carried out to described non-crystal oxide semiconductor layer, to be formed
State patterning non-crystal oxide semiconductor layer, wherein institute is carried out to described non-crystal oxide semiconductor layer
State the first lithographic and described first etch process step comprises using non-crystal oxide described in the first acid etching
Semiconductor layer.
6. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 5, its feature exists
In described first acid comprises oxalic acid, citric acid, acetic acid or a combination thereof.
7. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 5, its feature exists
In described source electrode being formed on described patterned polysilicon state oxide semiconductor layer and described drain electrode step comprises：
Form conductive layer；And
Described conductive layer is carried out with the second lithographic and the second etch process, to form described source electrode and described leakage
Pole, wherein carries out described second lithographic to described conductive layer and described second etch process comprises to use second
Conductive layer described in acid etching, the pKa value of described second acid is more than the pKa value of described first acid.
8. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 7, its feature exists
In described second acid comprises hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, hydrofluoric acid or a combination thereof.
9. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 7, its feature exists
In described patterned polysilicon state oxide semiconductor layer is less than or equal to the etch-rate of described second acid
20 nm/minute.
10. the method manufacturing oxide semiconductor thin-film electric crystal as claimed in claim 7, its feature
It is, sour to the described second and described patterned polysilicon state oxide semiconductor layer of described conductive layer is to described
The etching selectivity of the second acid is more than or equal to 30：1.
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| CN113192844A (en) * | 2021-04-09 | 2021-07-30 | 电子科技大学 | Based on CO2Oxide film crystallization method of laser annealing process |
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