CN101800287B - Manufacturing method of organic field effect transistor with plane structure - Google Patents
Manufacturing method of organic field effect transistor with plane structure Download PDFInfo
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- CN101800287B CN101800287B CN2009100776793A CN200910077679A CN101800287B CN 101800287 B CN101800287 B CN 101800287B CN 2009100776793 A CN2009100776793 A CN 2009100776793A CN 200910077679 A CN200910077679 A CN 200910077679A CN 101800287 B CN101800287 B CN 101800287B
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Abstract
The invention discloses a manufacturing method of an organic field effect transistor with a plane structure, comprising the following steps: 1. coating photoresist on the surface of an insulated substrate; 2. Carrying out photoetching on the insulated substrate coated with the photoresist to obtain a gate dielectric graph; 3. growing a layer of gate dielectric film on the gate dielectric graph; 4. stripping to obtain the gate dielectric graph, then carrying out photoetching to obtain a resource electrode graph, a drain electrode graph and the gate dielectric graph; 5. stripping an electronic beam evaporation source, drain electrode metal and grating electrode meta to obtain an electrode graph; and 6. carrying out evaporation coating on an organic semiconductor material to finish manufacturing the device. The organic field effect transistor with the plane structure, which is obtained by utilizing the invention, reduces the process flow and improves the integration level of the device.
Description
Technical field
The present invention relates to the manufacture method in Micrometer-Nanometer Processing Technology field, particularly a kind of organic field effect transistor with plane structure in organic semiconductor.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work; People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life.
Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on the organic polymer semi-conducting material that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.
The performance that improves organic field-effect tube is the target that pursue in this field always.Meanwhile, for organic field effect tube potential application in circuit, the integrated level that how to improve it also is a problem demanding prompt solution.
Because organic material has the higher Fermi level of lower mobility, makes it face some obstacles aspect device miniaturization.Because the fragility of organic semiconducting materials, complicated technological process can cause very big injury to device performance.
Therefore, how to realize under simple technical flow that the high integrated level of organic field effect tube is a very challenging job.But the current solution that does not have maturation in this respect.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of manufacture method of organic field effect transistor with plane structure, to improve the integrated level of organic field effect tube.
(2) technical scheme
For achieving the above object, the invention provides a kind of manufacture method of organic field effect transistor with plane structure, this method comprises:
Step 1, coat photoresist on the dielectric base surface;
Step 2, the dielectric base of resist coating is carried out photoetching, obtain the gate medium figure;
Step 3, one deck gate dielectric membrane of on the gate medium figure, growing;
Step 4, peel off and obtain the gate medium figure, carry out photoetching once more and obtain source electrode pattern, drain electrode figure and gate electrode figure;
The electrode metal of step 5, electron beam evaporation source, leakage and grid is peeled off and is obtained electrode pattern;
Step 6, evaporation organic semiconducting materials are finished the making of device.
In the such scheme, dielectric base described in the step 1 is inorganic oxide or organic insulalive plastic.
In the such scheme, the gate dielectric membrane described in the step 3 obtains by electron beam evaporation.
In the such scheme, the electrode metal described in the step 5 is a gold.
In the such scheme, organic semiconducting materials described in the step 6 is the obtaining of method of adopting vacuum evaporation.
In the such scheme, organic semiconducting materials described in the step 6 is to adopt pentacene.
(3) beneficial effect
Characteristics of the present invention are to adopt device architecture to adopt planar structure, the parallel in the horizontal direction substrate surface that is distributed in of its gate electrode, gate medium, source-drain electrode.Entire device only needs Twi-lithography, and the interconnection between the device can directly realize by lead at substrate surface, and needn't consider traditional via hole technology.In addition, the organic field effect transistor with plane structure that utilizes the present invention to obtain has reduced the integrated level of the device that technological process improves.
Description of drawings
In order to illustrate further content of the present invention, below in conjunction with drawings and Examples, the present invention is done detailed description,
Fig. 1 is the method flow diagram of making organic field effect transistor with plane structure provided by the invention;
Fig. 2-1 is to Fig. 2-the 7th, the process chart of making organic field effect transistor with plane structure provided by the invention;
Fig. 3-1 is to Fig. 3-the 7th, the process chart of the making organic field effect transistor with plane structure that provides according to the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention provides a kind of method of making organic field effect transistor with plane structure, the organic field effect transistor with plane structure that utilizes the present invention to make has been overturned traditional mos pipe layer structure.This structure with the source-drain electrode gate medium of device and gate electrode horizontal distribution to substrate.Interconnection between the device can be very easily directly needn't be considered the problem by gate medium by wire interconnects on substrate like this.And, because new construction is perpendicular to distributing on the substrate plane raceway groove of device, thereby can come the control device channel width by the thickness of dielectric layers of growth so that the size of control device easily.
As shown in Figure 1, Fig. 1 is the method flow diagram of making organic field effect transistor with plane structure provided by the invention, and this method comprises:
Step 1, coat photoresist on the dielectric base surface; Dielectric base is inorganic oxide or organic insulalive plastic.
Step 2, the dielectric base of resist coating is carried out photoetching, obtain the gate medium figure;
Step 3, one deck gate dielectric membrane of on the gate medium figure, growing; Gate dielectric membrane obtains by electron beam evaporation.
Step 4, peel off and obtain the gate medium figure, carry out photoetching once more and obtain source electrode pattern, drain electrode figure and gate electrode figure;
The electrode metal of step 5, electron beam evaporation source, leakage and grid is peeled off and is obtained electrode pattern; Electrode metal is a gold.
Step 6, evaporation organic semiconducting materials are finished the making of device; Organic semiconducting materials is the obtaining of method of adopting vacuum evaporation, employing be pentacene.
Fig. 2-1 specifically comprises to the process chart that Fig. 2-7 shows making organic field effect transistor with plane structure provided by the invention:
Shown in Fig. 2-1, coat photoresist on the dielectric surface.
Shown in Fig. 2-2, photoetching obtains device gate medium figure.
Shown in Fig. 2-3, by peeling off behind electron beam evaporation regrowth one deck gate dielectric membrane.
Shown in Fig. 2-4, obtaining behind the gate medium figure once more, photoetching obtains device source drain electrode and gate electrode figure.
Shown in Fig. 2-5, electron beam evaporation source-drain electrode and gate electrode are peeled off and are obtained electrode pattern.
Shown in Fig. 2-6, the vacuum evaporation organic semiconducting materials is finished the making of device.
Fig. 3-1 specifically comprises to the process chart that the making organic field effect transistor with plane structure that provides according to the embodiment of the invention is provided Fig. 3-7:
Shown in Fig. 3-1, coat photoresist AZ9918 on the dielectric surface.
Shown in Fig. 3-2, photoetching obtains device gate medium figure.
Shown in Fig. 3-3, by peeling off behind electron beam evaporation regrowth one deck gate silicon oxide dielectric film.
As shown in Figure 3-4, obtaining behind the gate medium figure once more, photoetching obtains device source drain electrode and gate electrode figure.
Shown in Fig. 3-5, electron beam evaporation one deck gold thin film forms device source drain electrode and gate electrode, peels off and obtains electrode pattern.
Shown in Fig. 3-6, vacuum evaporation organic semiconducting materials pentacene is finished the making of device.
Fig. 3-the 7th, the perspective view of the organic field effect transistor with plane structure of making.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the manufacture method of an organic field effect transistor with plane structure is characterized in that, this method comprises:
Step 1, coat photoresist on the dielectric base surface;
Step 2, the dielectric base of resist coating is carried out photoetching, obtain the gate medium figure;
Step 3, one deck gate dielectric membrane of on the gate medium figure, growing;
Step 4, peel off this gate dielectric membrane and obtain the gate medium figure, carry out photoetching once more and obtain source electrode pattern, drain electrode figure and gate electrode figure;
The electrode metal of step 5, electron beam evaporation source, leakage and grid is peeled off and is obtained electrode pattern;
Step 6, evaporation organic semiconducting materials are finished the making of device.
2. the manufacture method of organic field effect transistor with plane structure according to claim 1 is characterized in that, dielectric base described in the step 1 is inorganic oxide or organic insulalive plastic.
3. the manufacture method of organic field effect transistor with plane structure according to claim 1 is characterized in that, the gate dielectric membrane described in the step 3 obtains by electron beam evaporation.
4. the manufacture method of organic field effect transistor with plane structure according to claim 1 is characterized in that, the electrode metal described in the step 5 is a gold.
5. the manufacture method of organic field effect transistor with plane structure according to claim 1 is characterized in that, organic semiconducting materials described in the step 6 is the obtaining of method of adopting vacuum evaporation.
6. the manufacture method of organic field effect transistor with plane structure according to claim 1 is characterized in that, organic semiconducting materials described in the step 6 is to adopt pentacene.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100776793A CN101800287B (en) | 2009-02-11 | 2009-02-11 | Manufacturing method of organic field effect transistor with plane structure |
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| CN2009100776793A CN101800287B (en) | 2009-02-11 | 2009-02-11 | Manufacturing method of organic field effect transistor with plane structure |
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| CN101800287A CN101800287A (en) | 2010-08-11 |
| CN101800287B true CN101800287B (en) | 2011-12-07 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670598A (en) * | 2005-04-08 | 2005-09-21 | 中国科学院长春应用化学研究所 | Process for preparing active matrix LCD arrangement with pattern active layers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670598A (en) * | 2005-04-08 | 2005-09-21 | 中国科学院长春应用化学研究所 | Process for preparing active matrix LCD arrangement with pattern active layers |
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