CN108122749B - A kind of SiC base GaN_HEMT back process based on graphical slide glass - Google Patents
A kind of SiC base GaN_HEMT back process based on graphical slide glass Download PDFInfo
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- CN108122749B CN108122749B CN201711383445.2A CN201711383445A CN108122749B CN 108122749 B CN108122749 B CN 108122749B CN 201711383445 A CN201711383445 A CN 201711383445A CN 108122749 B CN108122749 B CN 108122749B
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- 239000011521 glass Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000010410 layer Substances 0.000 claims description 30
- 238000005566 electron beam evaporation Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910018503 SF6 Inorganic materials 0.000 claims description 4
- 239000003085 diluting agent Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 abstract description 17
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 47
- 239000002585 base Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000010931 gold Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
Abstract
The present invention relates to a kind of SiC base GaN_HEMT back process based on graphical slide glass, including the following contents: the preparation of GaN HEMT device front technique；The protection of GaN HEMT front device region；Graphical slide glass preparation: back-side ground hole pattern is projected to the corresponding position of slide glass, then removes the slide glass material of the position to form heat release hole；GaN HEMT wafer is aligned with slide glass to be pasted；SiC substrate is thinned；Backside through vias technique；Back-side ground smithcraft；Slide glass and front protecting layer remove.The present invention first removes on slide glass or is thinned the slide glass material for needing etching SiC dorsal pore region, forms the slide glass with dorsal pore figure, then it is aligned with GaN HEMT technique wafer, the capacity of heat transmission of whole wafer can be effectively improved in etching SiC.
Description
Technical field
The present invention relates to compound semiconductor manufacturing technology fields, more particularly to a kind of SiC based on graphical slide glass
Base GaN_HEMT back process.
Background technique
Representative device of the GaN HEMT device as third generation compound semiconductor, with its high electron mobility, high breakdown
Voltage, high current density, high reliability are widely used in microwave power amplification sector.The lattice constant and GaN material of SiC material
The lattice constant of material is close, therefore the GaN HEMT heterojunction structure of general epitaxial growth high quality on sic substrates, have compared with
Big current density, while the thermal conductivity of SiC material is higher, can guarantee the requirement of high-power heat-dissipation.
In device fabrication process, thickness will be reached after completing positive technique 500um SiC substrate carry out it is thinned
It is that the SiC substrate of 500um or so is thinned to 200um by mechanical lapping hereinafter, carrying out ground connection dorsal pore work again with dorsal pore technique
Skill, the purpose of this technique first is that in order to GaN HEMT device heat dissipation, second is that ground connection dorsal pore technique is carried out, to reduce device inside
Ghost effect, be device be applied to the essential processing step in high frequency field.
In carrying out dorsal pore etching technics, because the Si-C bond energy in SiC substrate is larger, SiC material is very rigid, big function
The heat that rate, long-time plasma etching generate is huge, and heat dissipation problem can seriously affect etch rate and etch by-products
It removes, directly results in yield decline, or even influence front device performance.Therefore, back process technology needs to reform, Lai Tigao
The performance of SiC base GaN HEMT device and the difficulty for reducing industrialized production.
Summary of the invention
The purpose of the present invention is to provide a kind of SiC base GaN_HEMT back process based on graphical slide glass, from basic
Rate caused by the upper heat dissipation problem improved in SiC etching and poor thermal conduction declines problem.
To achieve the goals above, the present invention provides following technical schemes:
The present invention provides a kind of SiC base GaN_HEMT back process based on graphical slide glass, including the following contents:
The preparation of GaN HEMT device front technique: on the epitaxial wafer of SiC base GaN HEMT structure, GaN HEMT device is carried out
The preparation of part front technique；
The protection of GaN HEMT front device region: facial area is carried out to the above-mentioned wafer for having completed the preparation of GaN HEMT device
Domain carries out covering protection；
Graphical slide glass preparation: back-side ground hole pattern is projected to the corresponding position of slide glass, then removes the load of the position
Sheet material completes graphical slide glass preparation to form heat release hole；
GaN HEMT wafer is aligned with slide glass to be pasted: by the GaN HEMT wafer of above-mentioned completion front protecting and graphical load
Piece carries out overlay alignment and pastes；
SiC substrate is thinned: carrying out to the SiC substrate for the GaN HEMT wafer that above-mentioned completion slide glass is pasted thinned；
Backside through vias technique: on the above-mentioned wafer being thinned by SiC substrate, backside through vias technique is carried out, in SiC substrate
Upper etching through hole is to front metal layer；
Back-side ground smithcraft: in the backside of wafer of above-mentioned completion backside through vias technique, depositing low resistivity metal, complete
At back-side ground smithcraft；
Slide glass and front protecting layer remove: on the wafer of above-mentioned completion back metal technique, removing slide glass and slide glass is glutinous
Patch and front protecting layer photoresist complete whole set process.
Wherein, in graphical slide glass preparation, slide glass material includes SiC, sapphire, Pyrex, and slide glass is with a thickness of 200-
700um, the width of slide glass are greater than or equal to the width of front GaN HEMT wafer；Slide glass patterned way includes photoetching, wet process
Or dry etching.
Further, graphical slide glass preparation includes the following contents: back-side ground hole pattern is passed through photoetching development mode
It is projected directly into the corresponding position of slide glass, then the slide glass material of the position is removed to form heat release hole by dry etching method,
Complete graphical slide glass preparation.
Using the slide glass with back-side ground hole pattern, sticked with the wafer for having completed positive GaN HEMT technique
Patch uses Alignment Process when pasting, it is ensured that the dorsal pore region of GaN HEMT wafer and the dorsal pore pattern alignment on graphical slide glass,
Then routine GaN HEMT dorsal pore technique is successively carried out again to above-mentioned wafer again.In the back process of SiC base GaN HEMT, In
First remove or be thinned on slide glass and need the slide glass material in etching SiC dorsal pore region, form the slide glass with dorsal pore figure, then by its
It is aligned with GaN HEMT technique wafer, the capacity of heat transmission of whole wafer can be effectively improved in etching SiC.
Compared with prior art, the invention has the following advantages that
The present invention uses the slide glass with dorsal pore, and back side cooling gas can be more nearly etching reaction interface, can make
The heat that high-power, long-time plasma etching SiC is generated is discharged in time；The capacity of heat transmission of wafer is improved, so that SiC is carved
Erosion rate will not decline because of thermal accumlation, etch period sharp fall；Reduce laterally etched property caused by heat accumulation, energy
Enough accurately control the size of dorsal pore；The by-product of generation is reduced, more smooth inside etched dorsal pore, is conducive to subsequent back-side gold
Belong to technique.The process largely reduces the preparation process difficulty of GaN HEMT microwave power device, is conducive to device
It can significantly be promoted with yield.
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
Detailed description of the invention
Fig. 1 is flow diagram of the invention；
Fig. 2 is that completion GaN HEMT device front technique of the invention prepares example structure schematic diagram；
Fig. 3 is the front completion GaN HEMT device region the protection implement example structural schematic diagram of the invention；
Fig. 4 is that the graphical slide glass of completion of the invention prepares example structure schematic diagram；
Fig. 5 is aligned with slide glass for completion GaN HEMT wafer of the invention and pastes example structure schematic diagram；
Fig. 6 is that example structure schematic diagram is thinned in completion SiC substrate of the invention；
Fig. 7 is completion backside through vias process example structural schematic diagram of the invention；
Fig. 8 is completion back-side ground smithcraft example structure schematic diagram of the invention；
Fig. 9 is that completion slide glass of the invention and front protecting layer remove example structure schematic diagram；
In figure, 101 be GaN cap, and 102 be AlGaN potential barrier, and 103 be AlN insert layer, and 104 be GaN buffer layer, 105
It is SiC substrate for AlN nucleating layer, 106,1 is protective layer, and 2 be slide glass, and 3 be heat release hole, and 4 be backside through vias, and 5 be back-side ground
Metal layer.
Specific embodiment
The embodiment of the present invention is illustrated below in conjunction with attached drawing, it should be understood that embodiment described herein is only used
In the description and interpretation present invention, it is not intended to limit the present invention.
Embodiment
As shown in figs 1-9, the embodiment of a kind of SiC base GaN_HEMT back process based on graphical slide glass of the invention
And corresponding structural schematic diagram, the specific steps are as follows:
The preparation of GaN HEMT device front technique: step 1 on the epitaxial wafer of SiC base GaN HEMT structure, carries out GaN
The preparation of HEMT device front technique.
On the epitaxial wafer of SiC base GaN HEMT structure, the preparation of GaN HEMT device front technique, preparation step packet are carried out
Contain but is not limited to, active area isolation, source electrode, drain metal preparation, gate metal preparation, capacitor, inductance preparation, electrode thickening,
The related process such as metal interconnection.
In one embodiment, on the epitaxial wafer of SiC base GaN HEMT structure, inject that form device active by fluorine ion
Separate from；Electron beam evaporation lamination metal Ti/Al/Ni/Au 20/150/50/100nm, is moved back in 850 degrees Celsius of nitrogen atmospheres
Fiery 30s forms source electrode (S) drain electrode (D) Ohmic contact；Electron beam evaporation W metal/Au 50/200nm forms grid (G) contact；
Electron beam evaporation W metal/Au 50/500nm is thickeied as electrode；Electron beam evaporation W metal/Au 50/500nm forms front
Metal interconnection so far completes the preparation of front GaN HEMT device.Referring to fig. 2.
Step 2, GaN HEMT front device region protection: to it is above-mentioned completed GaN HEMT device preparation wafer into
Row front surface region carries out covering protection.
The epitaxial wafer front surface region for having completed the preparation of GaN HEMT device is protected, protected mode includes but unlimited
In photoresist, the organic or inorganic film of acid and alkali resistance corrosion, coverage mode is including but not limited to rotary, the objects such as injecting type
Reason or chemical deposition, thickness is including but not limited to 1um to 100um.
In one embodiment, front surface region protection is carried out to the wafer for having completed the preparation of GaN HEMT device, by even
Glue machine smears AZ4620 photoresist as protective layer 1 in the one side for being prepared with GaN HEMT device, and spin coating machine speed is 4000 turns
Per minute, time 30s, glue thickness are 6um, 120 degrees Celsius of baking 120s.Referring to Fig. 3.
Graphical slide glass preparation: back-side ground hole pattern is projected to the corresponding position of slide glass, then removes the position by step 3
The slide glass material set completes graphical slide glass preparation to form heat release hole.Wherein, this step can be placed in step 1 and/or step
Before two.
The selection of slide glass material is including but not limited to SiC, sapphire, Pyrex, thickness including but not limited to
200-700um, slide glass patterned way including but not limited to photoetching, wet process or dry etching, figure distributions limit in GaN
The back-side ground hole site of HEMT device design is completely the same, can be realized and precisely aligns, the size of slide glass is greater than or is equal to
Positive GaN HEMT wafer.
In one embodiment, back-side ground hole pattern is projected directly into the corresponding positions of slide glass 2 by photoetching development mode
It sets, then the slide glass material of the position is removed to form heat release hole 3 by dry etching method, complete graphical slide glass preparation.Ginseng
See Fig. 4.
Step 4, GaN HEMT wafer is aligned with slide glass to be pasted: by the GaN HEMT wafer of above-mentioned completion front protecting with
Graphical slide glass carries out overlay alignment and pastes.
The GaN HEMT wafer for completing front protecting and above-mentioned graphical slide glass are subjected to overlay alignment, alignment includes
But it is not limited to positive alignment, double-sided alignment is pasted immediately after alignment, and the mode pasted is including but not limited to liquid
Body, solids adhering agent.
In one embodiment, the GaN HEMT wafer for completing front protecting and above-mentioned graphical slide glass 2 are subjected to alignment pair
Standard, alignment are double-sided alignment, are pasted after aligned by heat treatment mode.Referring to Fig. 5.
Step 5, SiC substrate are thinned: carrying out to the SiC substrate for the GaN HEMT wafer that above-mentioned completion slide glass is pasted thinned.
It will complete the SiC substrate of wafer that slide glass is pasted and carry out thinned, mode is thinned including but not limited to mechanical lapping
Etc. modes, SiC substrate thickness is thinned to 100-200um.
In one embodiment, the SiC substrate 106 for completing the wafer that slide glass is pasted is thinned to by way of mechanical lapping
100um.Referring to Fig. 6.
Backside through vias technique: step 6 on the above-mentioned wafer being thinned by SiC substrate, carries out backside through vias technique, In
Etching through hole (back-side ground hole) is to front metal layer in SiC substrate.
On the wafer being thinned by SiC substrate, backside through vias technique is carried out, mode is including but not limited to using fluorine
Base is as plasma etching gas, using W metal as etch mask, etches above-mentioned SiC, is made again with chloro after removing Ni exposure mask
Above-mentioned nitride thin layer is etched to front metal layer using SiC as etch mask for plasma etching gas.
In one embodiment, on the wafer being thinned by SiC, using photoetching negtive photoresist, pass through dual surface lithography alignment and electricity
The mode of plating needs the region being grounded in front device region, forms W metal etch mask with a thickness of 5um, is carved using plasma
Etching method etches area above SiC layer to front device area, and etching gas is sulfur hexafluoride SF6, and diluent gas is argon Ar；
It reuses plasma etching technology and etches GaN layer to positive ground metal layer, etching gas is chlorine Cl2, diluent gas
For boron chloride Bcl3, the connection of ground area front and back sides, i.e. completion backside through vias 4 are completed.Referring to Fig. 7.
Back-side ground smithcraft: step 7 in the backside of wafer of above-mentioned completion backside through vias technique, deposits low-resistivity
Metal completes back-side ground smithcraft.
It deposits low resistivity metal and " ground " line of front device is connected to the back side, in order to reduce device work and exist
Ghost effect under high frequency, Metal deposition mode is including but not limited to, electron beam evaporation, magnetron sputtering, the modes such as plating, low electricity
Resistance rate metal is including but not limited to gold, platinum etc..So far, whole back process are completed.
In one embodiment, in the backside of wafer for completing backside through vias technique, metal Ti/Au is deposited by electron beam evaporation
100/1000nm completes dorsal pore smithcraft, i.e. completion back-side ground metal layer 5.Referring to Fig. 8.
Step 8, slide glass and front protecting layer remove: on the wafer of above-mentioned completion back metal technique, remove slide glass and
Slide glass pastes agent and front protecting layer photoresist, completes whole set process.
The mode that slide glass and front protecting layer remove is including but not limited to using heating and organic or inorganic solution wet process
Corrode front protecting layer, or use plasma dry etch front protecting layer, it is ensured that both the above mode does not damage positive GaN
HEMT device structure.
In one embodiment, on the wafer for completing back metal technique, removing slide glass using heating, to pass through room temperature again wet
Method forms of corrosion removes front protecting layer photoresist AZ4620 using acetone and slide glass pastes agent, so far completes whole set process.Ginseng
See Fig. 9.
As described above, heat release hole is reserved on the slide glass for the corresponding region for needing etching SiC to form back-side ground hole, because
Dorsal pore region (backside through vias) accounts for the percentage very little of whole wafer area, and opening heat release hole on slide glass in advance will not influence entirely
The supportive of slide glass.Using the GaN HEMT wafer of above-mentioned slide glass overleaf in SiC etching process, the heat transfer energy of whole wafer
Power is significantly improved, and especially the slide glass material below the region (dorsal pore region) for needing etching SiC is removed, and the back side is cold
But gas can be more nearly etching reaction interface, and the heat for etching generation can also transfer out in time to be come, and directly enhance work
Skill process efficiency improves the stability and reliability of back process indirectly, be conducive to improve etch rate, process yields and
Device performance.Moreover, patterned slide glass can be used repeatedly, have to SiC base GaN HEMT industrialization process very heavy
The meaning wanted.
It should be appreciated that the above embodiment of the present invention and example, be to be not intended to limit this hair for description and interpretation purpose
Bright range.The scope of the present invention is defined by claim, rather than by above-described embodiment and example definition.
Claims (10)
1. a kind of SiC base GaN HEMT back process based on graphical slide glass, which is characterized in that including the following contents:
The preparation of GaN HEMT device front technique: on the epitaxial wafer of SiC base GaN HEMT structure, GaN HEMT device is being carried out just
The preparation of face technique；
GaN HEMT front device region protection: to it is above-mentioned completed GaN HEMT device preparation wafer carry out front surface region into
Row covering protection forms front protecting layer；
Graphical slide glass preparation: back-side ground hole pattern is projected to the corresponding position of slide glass, then removes the slide glass material of the position
Material completes graphical slide glass preparation to form heat release hole；
GaN HEMT wafer is aligned with slide glass to be pasted: by the GaN HEMT wafer of above-mentioned completion front protecting and graphical slide glass into
Row overlay alignment and use are pasted agent and are pasted；
SiC substrate is thinned: carrying out to the SiC substrate for the GaN HEMT wafer that above-mentioned completion slide glass is pasted thinned；
Backside through vias technique: on the above-mentioned wafer being thinned by SiC substrate, backside through vias technique is carried out, is carved on sic substrates
Through-hole is lost to front metal layer；
Back-side ground smithcraft: in the backside of wafer of above-mentioned completion backside through vias technique, low resistivity metal is deposited, completes back
Face grounded metal technique；
Slide glass and front protecting layer remove: on the wafer of above-mentioned completion back metal technique, removing slide glass and slide glass pastes agent
With front protecting layer, whole set process is completed.
2. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 1, which is characterized in that
The preparation of GaN HEMT device front technique includes the following contents: on the epitaxial wafer of SiC base GaN HEMT structure, passing through fluorine
Ion implanting forms device active area isolation；Electron beam evaporation lamination metal Ti/Al/Ni/Au20/150/50/100nm, 850
Annealing 30s forms source and drain Ohmic contact in degree Celsius nitrogen atmosphere；Electron beam evaporation W metal/Au50/200nm forms grid and connects
Touching；Electron beam evaporation W metal/Au50/500nm is thickeied as electrode；Electron beam evaporation W metal/Au50/500nm is formed just
Face metal interconnection completes the preparation of front GaN HEMT device.
3. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 1, which is characterized in that
The protection of GaN HEMT front device region includes the following contents: being applied by sol evenning machine in the one side for being prepared with GaN HEMT device
Troweling photoresist, spin coating machine speed are 4000 rpms, and the smearing time is 30s, and forming glue thickness is 6um protective layer, and is taken the photograph 120
Family name's degree toasts 120s, completes the protection of front device region.
4. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 1, which is characterized in that
In the graphical slide glass preparation, slide glass material includes SiC, sapphire, Pyrex, and slide glass is with a thickness of 200-700um, slide glass
Width be greater than or equal to front GaN HEMT wafer width.
5. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 1, which is characterized in that
In the graphical slide glass preparation, slide glass patterned way includes photoetching, wet process or dry etching.
6. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 4 or 5, feature exist
In the graphical slide glass preparation includes the following contents: back-side ground hole pattern is projected directly by photoetching development mode
The corresponding position of slide glass, then the slide glass material of the position is removed to form heat release hole by dry etching method, it completes graphical
Slide glass preparation.
7. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 1, which is characterized in that
The thinned particular content of the SiC substrate is as follows: the GaN HEMT wafer for being pasted completion slide glass by way of mechanical lapping
SiC substrate be thinned to 100-200um.
8. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 1, which is characterized in that
The backside through vias technique includes the following contents: on the wafer being thinned by SiC substrate, using photoetching negtive photoresist, by two-sided
The region that lithography alignment and the mode of plating need to be grounded in front device region, forms with a thickness of 5um W metal etch mask；Make
The SiC layer of above-mentioned ground area is etched to front device area with method for etching plasma, and etching gas is sulfur hexafluoride
SF6, diluent gas are argon Ar；It reuses plasma etching technology and etches GaN layer to positive ground metal layer, etch gas
Body is chlorine Cl2, and diluent gas is boron chloride Bcl3, completes the connection of ground area front and back sides.
9. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 1, which is characterized in that
The back-side ground smithcraft includes the following contents: in the backside of wafer for completing backside through vias technique, passing through electron beam evaporation
Metal Ti/Au100/1000nm is deposited, back-side ground smithcraft is completed.
10. a kind of SiC base GaN HEMT back process based on graphical slide glass according to claim 1, which is characterized in that
It includes the following contents that the slide glass and front protecting layer, which remove: on the wafer for completing back metal technique, being removed by heating
Slide glass, then removed by wet etching mode using acetone and paste agent between front protecting layer and slide glass.
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| CN111524819B (en) * | 2020-04-29 | 2021-12-14 | 绍兴同芯成集成电路有限公司 | Glass carrier plate windowing and double-sided metallization process in 2.5D and 3D packaging |
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| CN112466925B (en) * | 2020-10-22 | 2022-06-10 | 西安电子科技大学 | Low-radio-frequency-loss silicon-based gallium nitride radio-frequency power device and preparation method thereof |
| CN114566461A (en) * | 2022-03-02 | 2022-05-31 | 成都海威华芯科技有限公司 | Semiconductor device deep back hole manufacturing method and device based on front and back side through holes |
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