CN107644802A - Plasma etching apparatus and its edge ring assembly and electrostatic chuck - Google Patents
Plasma etching apparatus and its edge ring assembly and electrostatic chuck Download PDFInfo
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- CN107644802A CN107644802A CN201610579402.0A CN201610579402A CN107644802A CN 107644802 A CN107644802 A CN 107644802A CN 201610579402 A CN201610579402 A CN 201610579402A CN 107644802 A CN107644802 A CN 107644802A
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- electrostatic chuck
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Abstract
The present invention provides plasma etching apparatus and its edge ring assembly and electrostatic chuck, to improve the defects of etching speed is uneven.Wherein, the edge ring assembly includes：Insertion ring, there are inboard portion and Outboard Sections, the inboard portion is located at the lower section of substrate edge, and the Outboard Sections are outwards beyond the coverage of substrate edge；Focusing ring, cover the Outboard Sections of insertion ring；Wherein, CFocus、CInsertBoth sum and CESCRatio between 0.9 to 1.1, CFocusFor the capacitance of the focusing ring, CInsertFor the capacitance of the insertion ring, CESCFor the capacitance of the electrostatic chuck.
Description
Technical field
The present invention relates to plasma etching apparatus.
Background technology
Corona treatment, such as etch, be widely used in the manufacture of semiconductor devices.Deng
Gas ions bombardment equipment belongs to one kind of dry etching, and it removes the surface of substrate by Ions Bombardment
Atom, so as to reach the purpose of etching.
The problem often occurred is performed etching using traditional plasma processing equipment is：Substrate
The etching speed of surface everywhere is uneven (non-uniform).Such as the etching at substrate edge
Speed is significantly faster than that substrate center region.
The content of the invention
According to an aspect of the present invention, there is provided a kind of edge ring for plasma etching apparatus
Component, in the plasma etching apparatus, pending substrate is fixed by an electrostatic chuck,
The edge ring assembly includes：
Insertion ring, has inboard portion and Outboard Sections, and the inboard portion is located at substrate edge
Lower section, the Outboard Sections are outwards beyond the coverage of substrate edge；
Focusing ring, cover the Outboard Sections of insertion ring；
Wherein, CFocus、CInsertBoth sum and CESCRatio between 0.9 to 1.1, CFocus
For the capacitance of the focusing ring, CInsertFor the capacitance of the insertion ring, CESCFor the electrostatic
The capacitance of chuck.
Optionally, the focusing ring is made from a material that be electrically non-conductive.
Optionally, the focusing ring is made up of alundum (Al2O3).
Optionally, the focusing ring is made of an electrically conducting material.
Optionally, the focusing ring is made up of Si, C or SiC.
Optionally, the insertion ring is made of an electrically conducting material.
Optionally, the material of the insertion ring is different from focusing ring.
Optionally, the inboard portion of the insertion ring is integrally formed with Outboard Sections, by identical material
Material is made.
According to another aspect of the present invention, there is provided a kind of edge for plasma etching apparatus
Ring assemblies, in the plasma etching apparatus, pending substrate is consolidated by an electrostatic chuck
Fixed, the edge ring assembly includes：
Insertion ring, there is the inboard portion being made of an electrically conducting material and the outside made of insulating materials
Part, the inboard portion are located at the lower section of substrate edge, and the Outboard Sections are outwards beyond base
The coverage at piece edge；
Focusing ring, cover at least described Outboard Sections of insertion ring；
Wherein, CFocus、Cinner-InsertBoth sum and CESCRatio between 0.9 to 1.1,
CFocusFor the capacitance of the focusing ring, Cinner-InsertFor the electric capacity of the inboard portion of the insertion ring
Value, CESCFor the capacitance of the electrostatic chuck.
Optionally, the focusing ring is made from a material that be electrically non-conductive.
Optionally, the focusing ring includes alundum (Al2O3).
Optionally, the focusing ring is made of an electrically conducting material.
Optionally, the focusing ring is made up of Si, C or SiC.
Optionally, the material of the inner part is different from the focusing ring.
Optionally, the material of the inboard portion is metal.
Optionally, the material of the Outboard Sections is ceramics or quartz.
According to a further aspect of the invention, there is provided a kind of electrostatic for plasma etching apparatus
Chuck, including pedestal, the middle section of the pedestal are higher than fringe region, and in intermediate region shape
Depressed part is formed into boss portion, edge region, edge ring is provided with above depressed part；
In the pending substrate of fixation, the middle section of substrate is supported by the boss portion, substrate
Fringe region then extend to the top of the edge ring positioned at the depressed part, accordingly, depressed part quilt
Inner and outer is divided into, the inner side is covered by substrate edge region, and outside is not by substrate side
Edge region is covered；
Wherein, electrostatic chuck is denoted as C in the capacitance of boss portioncenter, electrostatic chuck is in depressed part
The capacitance of inner side is denoted as Cinner-edge, CcenterWith Cinner-edgeRatio between 0.9 to 1.1.
Optionally, Cinner-edgeIt is made up of two parts：In the capacitance and depressed part of pedestal depressed part
The capacitance of square element.
Optionally, in addition to edge ring assembly, the edge ring assembly include：
Insertion ring, has inboard portion and Outboard Sections, and the inboard portion is located at substrate edge
Lower section, the Outboard Sections are outwards beyond the coverage of substrate edge；
Focusing ring, cover the Outboard Sections of insertion ring.
Optionally, the inboard portion of the insertion ring is integrally formed with Outboard Sections, by identical material
Material is made.
Optionally, the insertion ring is made of an electrically conducting material.
Optionally, the inboard portion is made of an electrically conducting material, and the Outboard Sections are by insulating materials
It is made.
Optionally, the focusing ring is made up of non-conducting material or conductive material.
Optionally, the focusing ring includes alundum (Al2O3).
Optionally, the focusing ring is made up of Si, C or SiC.
According to a further aspect of the invention, there is provided a kind of plasma etching apparatus, it is included such as
Preceding described edge ring assembly, or including foregoing electrostatic chuck.
Brief description of the drawings
Fig. 1 is the schematic diagram of the plasma sheath above substrate in plasma etch apparatus；
Fig. 2 is the structural representation of one embodiment of edge ring assembly；
Fig. 3 is the equivalent circuit diagram corresponding with Fig. 2 embodiments；
Fig. 4 is the structural representation of another embodiment of edge ring assembly；
Fig. 5 is the structural representation of the another embodiment of edge ring assembly.
Embodiment
The uneven of etching speed is mainly due to substrate surface upper plasma sheaths (plasma
Sheath uneven distribution), in other words, uneven point of sheaths boundary plasma density
Cloth.For example, the sheaths bending (sheath curvature) (as shown in Figure 1) of substrate W peripheries
Cause at more Ions Bombardment substrate edges, so that having faster etching at substrate edge
Speed.The problem of sheaths bending also causes one extra：At substrate edge, Ions Bombardment
Angle is not orthogonal to substrate surface so that produces undesirable slope profile (undesired tilting
profile)。
One solution of above-mentioned etching speed problem of non-uniform or/and edge tilt problem is to increase
Big electrostatic chuck ESC area so that it substantially exceeds substrate W edge, such as Fig. 1.But
It is that in etching process, the quality exposed to the electrostatic chuck of plasma environment understands high progression,
And also result in particle contamination and metallic pollution.
Generally also solves above-mentioned etching speed using edge ring (edge ring) or edge ring assembly
Spend problem of non-uniform and edge tilt problem.Edge ring or edge ring with proper height and structure
Component can compensate for the sheaths bending at substrate edge, improve the distribution of plasma.But not
In the disconnected plasma etch process repeated, the edge ring of the tool optimum efficiency can be corroded so that
Its height reduces, and causes the positive effect of the edge ring to reduce.In addition, same plasma is carved
The etching technics of erosion equipment operation different condition or different parameters can also change plasma sheath
State；It means that to be the etching technics of different condition or different parameters, design or configuration
Different edge rings or edge ring assembly.
The invention is intended to further improve above-mentioned etching speed problem of non-uniform or/and above-mentioned edge to incline
Oblique problem.As shown in Fig. 2 pending substrate W is consolidated by an electrostatic chuck (ESC) 20
It is fixed, it is configured with edge ring assembly 3 in substrate W periphery.The edge ring assembly 3 includes insertion
Ring 32 and focusing ring 34, wherein, insertion ring 32 has inboard portion 322 and Outboard Sections 324,
The inboard portion 322 is located at the lower section of substrate outer rim, the Outboard Sections 324 outwards beyond
The coverage of substrate outer rim.Dotted line is substrate W outer rim border in figure, also can substantially be regarded as
It is the line of demarcation of inboard portion 322 and Outboard Sections 324.Focusing ring 34 can be by conductive material (ratio
Such as, Si, C or SiC) be made, also can by non-conducting material in other words insulating materials (such as
Alundum (Al2O3)) it is made.Focusing ring 34 cover insertion ring 32 the Outboard Sections 324 (
In the present embodiment, inboard portion 322 also cover), avoid insertion ring from being exposed to plasma environment.
Although focusing ring 34 is directly exposed to plasma, because its material is the etching such as Si or C
Most common material or corrosion resistant material in device, thus, even if focusing ring is lossy, also not
Impurity can be caused to pollute.In addition, the outer surface of focusing ring can also coat resistant material (e.g., oxygen
Change yttrium or yttrium fluoride etc.), to reduce the consume of focusing ring.
To reach the purpose for further improving plasma sheath, insertion ring 32, focusing ring 34
Capacitance sum (that is, the total capacitance value at substrate edge) will substantially with electrostatic chuck 20 electricity
Capacitance (that is, the total capacitance value of substrate center region) is equal.In actually implementing, it is allowed to both
Between certain deviation be present, typically, when both deviations are when between positive and negative 10%, also may be used
Considerably improve sheaths bending defect.Thus, in CFocus、CInsertBoth sum and CESC
Ratio when between 0.9 to 1.1, can be considered that they are roughly equal.Wherein, CFocusFor institute
State the capacitance of focusing ring 34, CInsertFor the capacitance of the insertion ring 32, CESCTo be described quiet
The capacitance of electric chuck.
When the capacitance of electrostatic chuck 20 gives and can not change, it can generally pass through design/change
More/configuration height/material of focusing ring 34, height/material etc. of insertion ring 32 make above-mentioned electricity
Capacitance is equal or roughly equal.Compared with insertion ring 32, the focusing ring 34 positioned at outside is in material
Suffered limitation is more in terms of selection, such as, to avoid consume serious, focusing ring (is at least focusing on
Ring surface) to use resistant material；To prevent impurity from polluting, focusing ring (at least focusing ring
Matrix major part in other words) material (e.g., silicon, carbon, carbon more typical preferably in etching cavity
SiClx, alundum (Al2O3) etc.).That is, design or change internally positioned insertion ring 32
Material, height be it is more convenient, it is effective regulation substrate edge at capacitance (mainly by CFocus、
CInsertTwo parts form) means.
In actually implementing, the insertion ring 32 of unlike material can be selected as needed.Such as when need
When increasing the capacitance at substrate edge, the higher material of capacitivity (dielectric constant) can be used
Make insertion ring；When needing to reduce the capacitance at substrate edge, capacitivity can be used relatively low
Material (e.g., metallic aluminium) makes insertion ring.Typically, insertion ring can not with focusing ring material
Together.Insertion ring is preferably conductive material (such as aluminium, silicon), and at least insertion ring is close to electrostatic chuck
Inboard portion be preferably conductive material.
In the embodiment shown in Figure 2, the inboard portion 322 and outside portion of the insertion ring 32
Divide 324 to be integrally formed, and be made up of identical material.But this is not construed as limiting the invention.
Different situations can be related in follow-up embodiment.
In plasma etch process, electrostatic chuck 20, focusing ring 34, insertion ring 32 etc. are equal
Corresponding capacitor can be considered as.Specifically, as shown in figure 3, capacitor corresponding to insertion ring
(CInsert) capacitor (C corresponding with focusing ringFocus) after series connection, electricity corresponding with electrostatic chuck
Container (CESC) in parallel.Radio-frequency power (RF) is transmitted to above substrate by above-mentioned two branch road
Plasma, then transmit to ground.Wherein, corresponding to electrostatic chuck branch road it is substrate center area
Domain, it is substrate edge region corresponding to focusing ring insertion ring branch road.The two branches affects, determine
Plasma sheath distribution above substrate.By making the capacitance of above-mentioned two branch road roughly equal
(balance), plasma sheath distribution can be improved naturally, even suppress to avoid edge completely
Sheaths are bent, and then improve plasma distribution and Ions Bombardment angle.
Fig. 4 is the structural representation of another embodiment of edge ring assembly.With Fig. 2 embodiments
Difference is only embodied in insertion ring.Same section can refer to the description of preceding embodiment, only heavy below
The details that point description does not exist together.In the embodiment, the inboard portion 422 of insertion ring 42 and outside
Part 424 is made up of unlike material, wherein, inboard portion 422 can be made of an electrically conducting material, outside
Side part 424 is made up of insulating materials.Inboard portion 422 in the present embodiment is real equivalent to Fig. 2
The insertion ring applied in example is overall, its structure (e.g., material selection, height setting etc.) and function etc.
It is identical with Fig. 2 insertion ring, it is provided to realize substrate edge region and substrate center region
The balance of capacitance, improve the shape or profile of sheaths, avoid the sheaths buckling phenomenon of fringe region.
That is, CFocus、Cinner-InsertBoth sum and CESCRatio between 0.9 to 1.1,
Wherein, CFocusFor the capacitance of the focusing ring, Cinner-InsertFor the inboard portion of the insertion ring
Capacitance, CESCFor the capacitance of the electrostatic chuck.
To reach more preferably sheaths improvement, inboard portion 422 preferably outwards exceeds substrate side
The coverage of edge.That is, inboard portion 422 had both included the part below substrate edge,
Including beyond the part of substrate edge coverage.
In plasma etching, focus on ring surface and obvious ion sputtering (ion generally be present
sputtering).Ion sputtering phenomenon may introduce " micro- mask defect " at substrate edge, influence
The progress of etching.During RF bias power (RF Bias Power) increase, ion sputtering phenomenon is more
Seriously.Experiment shows, (e.g., the Outboard Sections 424 of insertion ring 42 are arranged into electrically insulating material
Ceramics or quartz etc.), it can obviously improve the ion sputtering for focusing on ring surface.
Fig. 5 is the structural representation of the above modification of two embodiments.It has roughly the same
Inventive concept.In the present embodiment, focusing ring 44, insertion ring 42 structure can be with above two realities
Apply identical in example.It the difference is that only the shape and edge ring assembly 4 of electrostatic chuck 20
Position.Such as Fig. 5, the electrostatic chuck 20 for plasma etching apparatus includes pedestal 21, institute
The middle section for stating pedestal 21 is higher than fringe region, and formed in intermediate region boss portion 212,
Fringe region forms depressed part (not indicated in figure), and edge ring assembly 4 is provided with above depressed part
(in the specification and claims a, part that edge ring can be interpreted as to electrostatic chuck).
Wherein, pedestal 21 can be roughly divided into two parts again：The underlying master being made primarily of metal
Body portion 217, Electrostatic Absorption area 219 above.Horizontal dotted line in figure can be considered main part
217 with the line of demarcation in Electrostatic Absorption area 219, belong to Electrostatic Absorption area 219 above dotted line, it is empty
Main part 217 is belonged to below line.Electrostatic Absorption area 219 includes electrostatic attraction electrode floor and coats the electricity
The upper and lower insulating barrier (not shown in figure) of pole layer.Electrostatic Absorption area 219 may also include heat-insulated
The structure (not shown) such as layer.The middle section that Electrostatic Absorption area 219 is only positioned at pedestal 21 is (convex
Platform portion 212).
In the pending substrate W of fixation, substrate W middle section is by the boss portion 212
Support, substrate W fringe region then extend to the edge ring assembly 4 positioned at the depressed part
Top, accordingly, depressed part are divided into two regions, i.e. inner and outer, and the inner side is by base
Piece fringe region is covered, and the outside is not covered by substrate edge region.Vertical void in figure
Line can be considered the line of demarcation in recess and outside.
To reach the purpose for further improving plasma sheath, electrostatic chuck 20 can be made in boss
The capacitance in portion 212 (substrate center region in other words) and electrostatic chuck 20 recess (or
Person says substrate edge region) capacitance it is roughly equal.That is, CcenterWith Cinner-edge
Ratio between 0.9 to 1.1, wherein, CcenterFor electrostatic chuck boss portion capacitance,
Cinner-edgeFor electrostatic chuck recess capacitance.
Wherein, capacitance C of the electrostatic chuck 20 in recessinner-edgeMainly determined by three parts
It is fixed：Insertion ring 42 and focusing ring 44 above the depressed part of pedestal 21, depressed part, it is therein to insert
Enter ring 42 with focusing ring 44 and play absolute main function, depressed part can be neglected.That is,
Cinner-edgeSubstantially equivalent to the capacitance of the capacitance of pedestal depressed part and depressed part upper element it
With.Capacitance C of the electrostatic chuck 20 in boss portion 212centerMainly to be determined by two parts：
The main part 217 of lower section and the Electrostatic Absorption area 219 of top, Electrostatic Absorption area 219 therein rises
Absolute main function, main part 217 are negligible.That is, CcenterIt is substantially equivalent to quiet
The capacitance in Electro Sorb area.Further, because influence of the main part to capacitance is minimum, Ccenter
The capacitance of substantially equivalent to whole electrostatic chuck.Thus it is not difficult to find out, the electricity in Fig. 2 and Fig. 4
Capacitance relational expression is to a certain extent equivalent to the simplification version of relational expression in the present embodiment.
Although present disclosure is discussed in detail by above preferred embodiment, but it should
Recognize that the description above is not considered as limitation of the present invention.Read in those skilled in the art
After having read the above, all it will be apparent for a variety of modifications and substitutions of the present invention.Cause
This, protection scope of the present invention should be limited to the appended claims.
Claims (26)
1. for the edge ring assembly of plasma etching apparatus, filled in the plasma etching
In putting, pending substrate is fixed by an electrostatic chuck, and the edge ring assembly includes：
Insertion ring, has inboard portion and Outboard Sections, and the inboard portion is located at substrate edge
Lower section, the Outboard Sections are outwards beyond the coverage of substrate edge；
Focusing ring, cover the Outboard Sections of insertion ring；
Wherein, CFocus、CInsertBoth sum and CESCRatio between 0.9 to 1.1, CFocus
For the capacitance of the focusing ring, CInsertFor the capacitance of the insertion ring, CESCFor the electrostatic
The capacitance of chuck.
2. edge ring assembly as claimed in claim 1, it is characterised in that the focusing ring by
Non-conducting material is made.
3. edge ring assembly as claimed in claim 2, it is characterised in that the focusing ring by
Alundum (Al2O3) is made.
4. edge ring assembly as claimed in claim 1, it is characterised in that the focusing ring by
Conductive material is made.
5. edge ring assembly as claimed in claim 4, it is characterised in that the focusing ring by
Si, C or SiC are made.
6. edge ring assembly as claimed in claim 1, it is characterised in that the insertion ring by
Conductive material is made.
7. the edge ring assembly as described in claim 1 or 6, it is characterised in that the insertion
The material of ring is different from focusing ring.
8. edge ring assembly as claimed in claim 1, it is characterised in that the insertion ring
Inboard portion is integrally formed with Outboard Sections, is made up of identical material.
9. for the edge ring assembly of plasma etching apparatus, filled in the plasma etching
In putting, pending substrate is fixed by an electrostatic chuck, and the edge ring assembly includes：
Insertion ring, there is the inboard portion being made of an electrically conducting material and the outside made of insulating materials
Part, the inboard portion are located at the lower section of substrate edge, and the Outboard Sections are outwards beyond base
The coverage at piece edge；
Focusing ring, cover at least described Outboard Sections of insertion ring；
Wherein, CFocus、Cinner-InsertBoth sum and CESCRatio between 0.9 to 1.1,
CFocusFor the capacitance of the focusing ring, Cinner-InsertFor the electric capacity of the inboard portion of the insertion ring
Value, CESCFor the capacitance of the electrostatic chuck.
10. edge ring assembly as claimed in claim 9, it is characterised in that the focusing ring by
Non-conducting material is made.
11. edge ring assembly as claimed in claim 10, it is characterised in that the focusing ring
Including alundum (Al2O3).
12. edge ring assembly as claimed in claim 9, it is characterised in that the focusing ring by
Conductive material is made.
13. edge ring assembly as claimed in claim 12, it is characterised in that the focusing ring
It is made up of Si, C or SiC.
14. edge ring assembly as claimed in claim 9, it is characterised in that the inner part
Material it is different from the focusing ring.
15. edge ring assembly as claimed in claim 9, it is characterised in that the inboard portion
Material be metal.
16. edge ring assembly as claimed in claim 9, it is characterised in that the Outboard Sections
Material for ceramics or quartz.
17. for the electrostatic chuck of plasma etching apparatus, including pedestal, in the pedestal
Centre region is higher than fringe region, and boss portion, edge region formation depression are formed in intermediate region
Portion, edge ring is provided with above depressed part；
In the pending substrate of fixation, the middle section of substrate is supported by the boss portion, substrate
Fringe region then extend to the top of the edge ring positioned at the depressed part, accordingly, depressed part quilt
Inner and outer is divided into, the inner side is covered by substrate edge region, and outside is not by substrate side
Edge region is covered；
Wherein, electrostatic chuck is denoted as C in the capacitance of boss portioncenter, electrostatic chuck is in depressed part
The capacitance of inner side is denoted as Cinner-edge, CcenterWith Cinner-edgeRatio between 0.9 to 1.1.
18. electrostatic chuck as claimed in claim 17, it is characterised in that Cinner-edgeBy two
It is grouped into：The capacitance of pedestal depressed part and the capacitance of depressed part upper element.
19. electrostatic chuck as claimed in claim 17, in addition to edge ring assembly, the side
Edge ring assemblies include：
Insertion ring, has inboard portion and Outboard Sections, and the inboard portion is located at substrate edge
Lower section, the Outboard Sections are outwards beyond the coverage of substrate edge；
Focusing ring, cover the Outboard Sections of insertion ring.
20. electrostatic chuck as claimed in claim 19, it is characterised in that the insertion ring
Inboard portion is integrally formed with Outboard Sections, is made up of identical material.
21. electrostatic chuck as claimed in claim 20, it is characterised in that the insertion ring by
Conductive material is made.
22. electrostatic chuck as claimed in claim 19, it is characterised in that the inboard portion
It is made of an electrically conducting material, the Outboard Sections are made up of insulating materials.
23. electrostatic chuck as claimed in claim 19, it is characterised in that the focusing ring by
Non-conducting material or conductive material are made.
24. electrostatic chuck as claimed in claim 23, it is characterised in that the focusing ring bag
Include alundum (Al2O3).
25. electrostatic chuck as claimed in claim 23, it is characterised in that the focusing ring by
Si, C or SiC are made.
A kind of 26. plasma etching apparatus, it is characterised in that it include as claim 1 to
Edge ring assembly described in 16 any one, or including as described in any one of claim 17 to 25
Electrostatic chuck.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610579402.0A CN107644802B (en) | 2016-07-21 | 2016-07-21 | Plasma etching apparatus and its edge ring assembly and electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610579402.0A CN107644802B (en) | 2016-07-21 | 2016-07-21 | Plasma etching apparatus and its edge ring assembly and electrostatic chuck |
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| Publication Number | Publication Date |
|---|---|
| CN107644802A true CN107644802A (en) | 2018-01-30 |
| CN107644802B CN107644802B (en) | 2019-09-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610579402.0A Active CN107644802B (en) | 2016-07-21 | 2016-07-21 | Plasma etching apparatus and its edge ring assembly and electrostatic chuck |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109256316A (en) * | 2018-09-29 | 2019-01-22 | 德淮半导体有限公司 | Plasma etching apparatus and its method for etching plasma |
| CN111653469A (en) * | 2020-06-30 | 2020-09-11 | 上海华力集成电路制造有限公司 | Focusing ring applied to etching equipment, forming method thereof and etching equipment |
| CN111868891A (en) * | 2018-08-02 | 2020-10-30 | 东京毅力科创株式会社 | Plasma etching method and plasma processing apparatus |
| CN112885690A (en) * | 2019-11-29 | 2021-06-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240021472A (en) * | 2022-08-10 | 2024-02-19 | 에스케이엔펄스 주식회사 | Focus ring and apparatus of plasma etching comprising the same |
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| CN1682344A (en) * | 2002-09-18 | 2005-10-12 | 朗姆研究公司 | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| CN103227091A (en) * | 2013-04-19 | 2013-07-31 | 中微半导体设备(上海)有限公司 | Plasma processing device |
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Patent Citations (2)
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|---|---|---|---|---|
| CN1682344A (en) * | 2002-09-18 | 2005-10-12 | 朗姆研究公司 | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| CN103227091A (en) * | 2013-04-19 | 2013-07-31 | 中微半导体设备(上海)有限公司 | Plasma processing device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111868891A (en) * | 2018-08-02 | 2020-10-30 | 东京毅力科创株式会社 | Plasma etching method and plasma processing apparatus |
| CN111868891B (en) * | 2018-08-02 | 2022-11-22 | 东京毅力科创株式会社 | Plasma etching method and plasma processing apparatus |
| CN109256316A (en) * | 2018-09-29 | 2019-01-22 | 德淮半导体有限公司 | Plasma etching apparatus and its method for etching plasma |
| CN112885690A (en) * | 2019-11-29 | 2021-06-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN112885690B (en) * | 2019-11-29 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN111653469A (en) * | 2020-06-30 | 2020-09-11 | 上海华力集成电路制造有限公司 | Focusing ring applied to etching equipment, forming method thereof and etching equipment |
| CN111653469B (en) * | 2020-06-30 | 2024-01-09 | 上海华力集成电路制造有限公司 | Focusing ring applied to etching equipment, forming method thereof and etching equipment |
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| Publication number | Publication date |
|---|---|
| CN107644802B (en) | 2019-09-06 |
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