CN108269727A - Capacitance coupling plasma processing unit and method of plasma processing - Google Patents
Capacitance coupling plasma processing unit and method of plasma processing Download PDFInfo
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- CN108269727A CN108269727A CN201611254369.0A CN201611254369A CN108269727A CN 108269727 A CN108269727 A CN 108269727A CN 201611254369 A CN201611254369 A CN 201611254369A CN 108269727 A CN108269727 A CN 108269727A
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- plasma processing
- processing unit
- annular element
- capacitance coupling
- coupling plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The present invention relates to a kind of capacitance coupling plasma processing unit and corresponding method of plasma processing, for improving the uniformity of substrate etching.Wherein, processing unit includes：The top electrode that is oppositely arranged and lower electrode are processing region P between the upper and lower electrode；Radio frequency power source；Bias power source is applied to the lower electrode；Annular element, around the lower electrode setting, the annular element is grounded by an impedance regulating.
Description
Technical field
The present invention relates to for processing the capacitance coupling plasma of semiconductor devices (Capacitively Coupled
Plasma) processing unit such as capacitance coupling plasma etching device, further relates to utilize above device processing semiconductor devices
Method.
Background technology
In the manufacturing process of semiconductor devices, in order in the regulation of the semiconductor die on piece formation as pending substrate
Predetermined pattern is formed on layer, uses the plasma etching performed etching using resist as mask, using plasma mostly
Processing.As for carrying out the plasma etching apparatus of such plasma etching, using various devices, wherein, mainstream
For capacitive coupling plasma processing apparatus.
In capacitive coupling plasma etching device, be configured in chamber a pair of parallel plate electrode (top electrode and
Lower electrode), apply high frequency by processing gas introduction chamber room, and to an electrode, high-frequency electric field is formed between electrode, is utilized
The high-frequency electric field forms the plasma of processing gas, and plasma etching is carried out to the specified layer of semiconductor wafer.
Specifically, it is known to which upward electrode applies the high frequency of plasma formation to form plasma, downwards electricity
Pole applies the high frequency of ion introducing, and the plasma etching apparatus of appropriate plasmoid is consequently formed, thereby, it is possible to
The high etching processing (for example, United States Patent (USP) US6423242) of reproducibility is carried out with high selectivity.
But existing capacitance coupling plasma processing unit still has improvement space, particularly in process uniformity side
Face.By taking plasma etching apparatus as an example, due to the element (substrate transfer as being located at reaction chamber side wall in existing etching device
Door, positioned at exhaust outlet of reaction chamber bottom etc.) geometry is asymmetric, Temperature Distribution is or not element (such as electrostatic chuck, focusing ring)
Uniformity and element electrical performance inhomogeneities etc. can influence cause to etch it is uneven, and then to properties of product and good
Rate has a huge impact, and there is an urgent need for be resolved.In addition, the having differences property of reaction cavity configuration of different etching device, causes to carve
Etching technique degree of irregularity is also different.Therefore, there is an urgent need for one kind (not to be temporarily released from one's regular work, realize adjust in process) online
The device or means actively continuously adjusted, utmostly to weaken the inhomogeneities of processing technology.
Invention content
According to an aspect of the present invention, a kind of capacitance coupling plasma processing unit is provided, including：
Reaction chamber is provided with roof, side wall and bottom wall；
Top electrode in the reaction chamber, is arranged on the roof；
Lower electrode is oppositely arranged in the reaction chamber, and with the top electrode；
Radio frequency power source is applied to the lower electrode；
Bias power source is applied to the lower electrode；
Annular element around the lower electrode setting, and can move up and down, and the annular element is electrically connected to the top electrode.
Optionally, the annular element is electrically connected with the top electrode by an impedance regulating.
Optionally, the impedance regulating includes a variometer or a variable resistance or a variable capacitance.
Optionally, the impedance regulating includes arbitrary two kinds in variometer, variable resistance and variable capacitance,
Or include variometer, variable resistance and variable capacitance simultaneously.
Optionally, the material of the annular element includes semiconductor or conductor.
Optionally, the material of the annular element includes silicon or silicon carbide or metal.
Optionally, the top electrode ground connection.
Optionally, the annular element includes multiple rings for being vertically arranged, and there are gaps between adjacent ring.
Optionally, the region between top electrode and lower electrode is processing region；When being moved to suitable position, the annular
Part can completely be surrounded from side or part surrounds the processing region.
According to another aspect of the present invention, a kind of capacitance coupling plasma processing unit is provided, including：
The top electrode that is oppositely arranged and lower electrode are processing region between the upper and lower electrode；
Radio frequency power source；
Bias power source is applied to the lower electrode；
Annular element, around the lower electrode setting, the annular element is grounded by an impedance regulating.
Optionally, the impedance regulating includes a variometer or a variable resistance or a variable capacitance.
Optionally, the impedance regulating includes arbitrary two kinds in variometer, variable resistance and variable capacitance,
Or include variometer, variable resistance and variable capacitance simultaneously.
Optionally, the material of the annular element includes semiconductor or conductor.
Optionally, the material of the annular element includes silicon or silicon carbide or metal.
According to another aspect of the present invention, a kind of method of plasma processing is provided, including：
Pending substrate is put into foregoing capacitance coupling plasma processing unit, and adjusts impedance and adjusts dress
It puts；
Processing gas is passed through to the capacitance coupling plasma processing unit, pending substrate is processed.
Description of the drawings
Fig. 1 is the structure diagram of the capacitance coupling plasma processing unit of one embodiment of the invention；
Fig. 2 is the change embodiment of annular element in Fig. 1.
Specific embodiment
Below in conjunction with specific embodiment and attached drawing, capacitance coupling plasma processing unit of the present invention and method are said
It is bright.It is emphasized that only it is the elaboration of exemplary type here, however not excluded that have other utilization embodiments of the present invention.
Inventor is the study found that (it is arranged on the periphery of substrate, the edge of adjacent substrate using the annular element of dead ground
Region), especially removable annular element can effectively promote the processing speed (for example, etch rate) of substrate edge, can using this
Significantly improve process uniformity.It further, (specifically can be by resistance or electricity if the ground connection degree of annular element be adjusted
Perhaps inductance or the arbitrary combination between them regulates and controls the ground connection degree of annular element), then it can be to substrate edge processing speed
Rate is continuously adjusted and is controlled, and then realizes the on-line control to process uniformity.This regulating system is to differential responses chamber
There is general applicability with different plasma treatment process.
Capacitance coupling plasma processing unit according to the present invention may include by multiple walls (such as side wall, roof and bottom wall)
The reaction chamber formed is enclosed, which usually can be cylinder, and the side wall of reaction chamber can be perpendicular to roof and bottom wall.Reaction chamber
Be internally provided with space, for accommodating substrate.Reaction chamber can be evacuated.Except the disengaging of air inlet, exhaust outlet and substrate is logical
Outside road, the other parts of reaction chamber keep closed in processing procedure, are isolated from the outside.Air inlet is connected with external air source,
For continuing in processing procedure to reaction chamber supplying process gas.Exhaust outlet is connected with external pump, for by processing procedure
The exhaust gas discharge reaction chamber of middle generation, is also used for controlling the air pressure in reaction chamber.
The processing unit further includes the upper and lower electrode being arranged in parallel and the high frequency power source being connected with them (e.g., is penetrated
Frequency power source and bias power source), the energy for exciting plasma and plasma is controlled.In general, powering on
Region between pole and lower electrode is processing region, and the processing region is by high-frequency energy is formed to light and maintain plasma.
Pending substrate may be disposed at the lower section of processing region, which can be to be etched or processing semiconductor chip or treat
It is processed into glass plate of flat-panel monitor etc..Top electrode usually may be configured as a part for gas spray, available for by gas
Body is guided to reaction chamber (especially processing region).Lower electrode usually may be disposed in electrostatic chuck, which can be used
In the substrate placed and fixation/clamping is to be processed.
One or more high frequency power sources can be individually applied to down (including radio frequency power source and bias power source)
Be applied on electrode or simultaneously top electrode on lower electrode, radio-frequency power is transported on lower electrode or top electrode is under
On electrode, so as to generate strong electric field inside reaction chamber.Most of electric field lines are limited between top electrode and lower electrode
In processing region, this electric field accelerates to being present in the electronics inside reaction chamber on a small quantity, is allowed to being inputted by gas spray
Reaction gas gas molecule collision.These collisions lead to the ionization of reaction gas and the excitation of plasma, thus
Plasma is generated in process chambers.The neutral gas molecule of reaction gas loses electronics when being subjected to these highfields, stays
Under positively charged ion.Positively charged ion accelerates towards lower electrode direction, is combined with the neutral substance in processed substrate,
Excite substrate processing, that is, etch, deposit etc..
Fig. 1 is that the capacitance coupling plasma processing unit of one embodiment of the invention (is specially capacitiveiy coupled plasma
Body etching device) structure diagram, be mainly used to show high frequency power (radio-frequency power in other words) transmission in reaction chamber
Path, thus, it does not show less relevant structure (such as roof, bottom wall, air inlet, exhaust outlet, substrate access way).
Such as Fig. 1, parallel top electrode (first electrode) 2 is oppositely arranged with lower electrode (second electrode) 4, upper and lower electrode 2,4
Between for processing region P (excitation generate plasma be mainly concentrated in the space).Top electrode may be generally disposed at instead
Can on the roof (not shown) of chamber or also top electrode be regarded as a part for roof by answering.In addition, top electrode 2 itself can also be seen
Work is a part for gas spray, and the channel of reaction chamber is entered as reaction gas.Lower electrode 4 is generally arranged at electrostatic chuck
On (electrostatic chuck) (part for being considered as electrostatic chuck), and pending substrate (not shown)
The upper surface of electrostatic chuck can be fixed on.
The outside of lower electrode 4 is provided with annular element 3.The material of annular element can be the semi-conducting materials such as silicon or silicon carbide
Can be the conductors material such as metal, for improve substrate edge region and above substrate center region plasma distribution it is equal
Even property.Annular element as better embodiment can be moved down vertically on (that is, direction of vertical top electrode or lower electrode)
It is dynamic.The annular element can be surrounded partially the processing region P from side.
Radio frequency power source (be usually a high frequency power generator) 6 can be applied to lower electrode 4, for will be between upper/lower electrode
Reaction gas excitation is plasma.To improve the efficiency of feed-in, can an impedance be set between radio frequency power source and lower electrode 4
Matching network (impedance matching network) (not shown).The frequency of radio frequency power source is typically larger than 10M,
For example can be 60M or 13.56M etc..
Plasma processing apparatus can also set bias power source (not shown).Bias power source is usually a high frequency power
Generator, frequency are lower than the frequency of radio frequency power source, thus can be described as the high frequency power generator compared with low frequency.Bias power source
The lower electrode 4 is commonly applied to, for controlling the distribution of energy of plasma.To improve the efficiency of its feed-in, can bias
An impedance matching network (impedance matching network) is set (not shown in figure between power source and lower electrode 4
Show).The frequency in bias power source is usually less than 5M, for example may be selected to be 2M or 500K etc..
Being not applied to the top electrode of high frequency power source (e.g., radio frequency power source and bias power source) can usually be grounded.Reaction
The side wall of chamber is generally also grounded.
In process, along substrate (lower electrode 4) -2 path of plasma-top electrode there are alternating electric field distribution,
The distribution of alternating electric field reflects distribution of the plasma in reaction chamber.Since certain elements are (as positioned at reaction chamber side wall
Substrate transfer door, positioned at exhaust outlet of reaction chamber bottom etc.) geometry is asymmetric, (such as electrostatic chuck focuses on certain elements
Ring) factors such as property that temperature distribution is non-uniform and element electrical performance inhomogeneities influence, alternating electric field be not uniformly point
Cloth.In general, the plasma above substrate center region is relatively strong (distribution comparatively dense), the plasma of substrate edge overlying regions
Body is weaker (distribution is sparse), this causes, and substrate center region etch rate is very fast, fringe region etch rate is slower, carves
Lose problem of non-uniform.
By being grounded annular element 3, for example annular element 3 can be electrically connected to the top electrode 2 being grounded, can significantly improve
The etch rate in substrate edge region improves the etching homogeneity of substrate center region and fringe region.The ground connection of annular element 3,
It is equivalent at annular element 3 and increases an electric field channel (current channel), that is, enhance the plasma in substrate edge region
Concentration and intensity can accelerate the etch rate in substrate edge region.To reach more preferably effect, annular element in height can be with
Substrate (or lower electrode) is concordant or higher than substrate (or lower electrode).
More preferably, it can connect in the Grounding of annular element 3 into an impedance regulating 8.(ratio is adjusted by impedance
Such as, regulation resistance or adjust inductance adjust capacitance or adjust simultaneously in them any two or adjust three simultaneously), can be to base
The enhancing degree of piece fringe region etch rate carries out different degrees of adjusting according to actual needs.
In general, impedance is smaller, the degree of substrate edge region etch rate enhancing is bigger；Impedance is bigger, substrate edge area
The degree that domain etch rate improves is smaller.Corresponding, impedance regulating 8 can be or can include a variable resistance or one
The combination of variometer or a variable capacitance or any two in them or the combination of three.The result of actual experiment also demonstrates
The effect.
Fig. 2 is the another embodiment of annular element.Other structures in addition to annular element can be identical with preceding embodiment,
I will not elaborate.In Fig. 2, annular element includes multiple rings 31,32,33,34 for being vertically arranged, and there are skies between adjacent ring
Gap.The gap can hold gas and pass through, but plasma not allowed to pass through substantially, thus the annular element can be considered as plasma about
Beam ring is act as plasma confinement, the processing region being limited between upper/lower electrode 2 and 4.The annular element may also include company
Each ring 31,32,33,34 is conspired to create an entirety by extension bar 38.The connecting rod be preferably conductive material (including conductor with
Semiconductor), each ring 31,32,33,34 is electrically connected.
Position in figure, the annular element can surround processing region P completely from side；Treat that it is moved up or down
Afterwards, then it may be merely able to part and surround processing region P.But this does not interfere it to generate improved effect.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (15)
1. a kind of capacitance coupling plasma processing unit, including：
Reaction chamber is provided with roof, side wall and bottom wall；
Top electrode in the reaction chamber, is arranged on the roof；
Lower electrode is oppositely arranged in the reaction chamber, and with the top electrode；
Radio frequency power source is applied to the lower electrode；
Bias power source is applied to the lower electrode；
Annular element around the lower electrode setting, and can move up and down, and the annular element is electrically connected to the top electrode.
2. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that the annular element with it is described on
Electrode is electrically connected by an impedance regulating.
3. capacitance coupling plasma processing unit as claimed in claim 2, which is characterized in that the impedance regulating packet
Include a variometer or a variable resistance or a variable capacitance.
4. capacitance coupling plasma processing unit as claimed in claim 2, which is characterized in that the impedance regulating packet
Include arbitrary two kinds in variometer, variable resistance and variable capacitance or include simultaneously variometer, variable resistance with can
Become capacitance.
5. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that the material packet of the annular element
Include semiconductor or conductor.
6. capacitance coupling plasma processing unit as claimed in claim 5, which is characterized in that the material packet of the annular element
Include silicon or silicon carbide or metal.
7. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that the top electrode ground connection.
8. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that the annular element includes vertical
Multiple rings of arrangement, there are gaps between adjacent ring.
9. capacitance coupling plasma processing unit as described in claim 1, which is characterized in that between top electrode and lower electrode
Region be processing region；When being moved to suitable position, the annular element can completely be surrounded from side or part surrounds institute
State processing region.
10. a kind of capacitance coupling plasma processing unit, including：
The top electrode that is oppositely arranged and lower electrode are processing region between the upper and lower electrode；
Radio frequency power source；
Bias power source is applied to the lower electrode；
Annular element, around the lower electrode setting, the annular element is grounded by an impedance regulating.
11. capacitance coupling plasma processing unit as claimed in claim 10, which is characterized in that the impedance regulating
Including a variometer or a variable resistance or a variable capacitance.
12. capacitance coupling plasma processing unit as claimed in claim 10, which is characterized in that the impedance regulating
Include including arbitrary two kinds in variometer, variable resistance and variable capacitance or simultaneously variometer, variable resistance with
Variable capacitance.
13. capacitance coupling plasma processing unit as claimed in claim 10, which is characterized in that the material of the annular element
Including semiconductor or conductor.
14. capacitance coupling plasma processing unit as claimed in claim 13, which is characterized in that the material of the annular element
Including silicon or silicon carbide or metal.
15. a kind of method of plasma processing, including：
Pending substrate is put into such as claim 2 to 4 and the processing of 10 to 14 any one of them capacitance coupling plasmas to fill
In putting, and impedance regulating is adjusted, to adjust the etch rate in substrate edge region；
Processing gas is passed through to the capacitance coupling plasma processing unit, pending substrate is processed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611254369.0A CN108269727A (en) | 2016-12-30 | 2016-12-30 | Capacitance coupling plasma processing unit and method of plasma processing |
| TW106136786A TWI703609B (en) | 2016-12-30 | 2017-10-25 | Capacitive coupling plasma processing device and plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611254369.0A CN108269727A (en) | 2016-12-30 | 2016-12-30 | Capacitance coupling plasma processing unit and method of plasma processing |
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| CN108269727A true CN108269727A (en) | 2018-07-10 |
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| CN201611254369.0A Pending CN108269727A (en) | 2016-12-30 | 2016-12-30 | Capacitance coupling plasma processing unit and method of plasma processing |
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| TW (1) | TWI703609B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037020A (en) * | 2018-07-26 | 2018-12-18 | 德淮半导体有限公司 | Plasma device and its working method |
| CN112530775A (en) * | 2019-09-18 | 2021-03-19 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN113745081A (en) * | 2020-05-27 | 2021-12-03 | 中微半导体设备(上海)股份有限公司 | Isolating ring assembly, plasma processing device and processing method |
| CN113838734A (en) * | 2020-06-24 | 2021-12-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
| CN114664622A (en) * | 2020-12-23 | 2022-06-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and adjusting method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130284B (en) * | 2019-12-31 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
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| CN113745081A (en) * | 2020-05-27 | 2021-12-03 | 中微半导体设备(上海)股份有限公司 | Isolating ring assembly, plasma processing device and processing method |
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| CN114664622A (en) * | 2020-12-23 | 2022-06-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and adjusting method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI703609B (en) | 2020-09-01 |
| TW201841199A (en) | 2018-11-16 |
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