CN104752143A - Plasma treating device - Google Patents
Plasma treating device Download PDFInfo
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- CN104752143A CN104752143A CN201310753338.XA CN201310753338A CN104752143A CN 104752143 A CN104752143 A CN 104752143A CN 201310753338 A CN201310753338 A CN 201310753338A CN 104752143 A CN104752143 A CN 104752143A
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- ring
- edge compensation
- processing apparatus
- plasma processing
- pedestal
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Abstract
The invention provides a plasma treating device. The device comprises a reaction cavity in which a base is arranged, an adjusting ring which coils the periphery of a static chuck, and a side edge compensation ring which coils the periphery of the base or the static chuck and is positioned below the adjusting ring, wherein the static chuck is arranged on the base; a substrate to be treated is arranged on the static chuck. The device is characterized in that an electrode is embedded into the side edge compensation ring; a power distribution circuit receives first and second radio frequency power through a first input end and a second input end and outputs the first and second radio frequency power to the base through the first output end as well as outputting the first or second radio frequency power to the electrode in the insulation compensation ring; the power distribution circuit further comprises a third input end for receiving a first DC voltage source and outputting the DV voltage to the electrode in the side edge compensation ring through the second output end.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of edge compensation ring being applied to plasma processing apparatus.
Background technology
Semiconductor processes for the manufacture of integrated circuit comprises chemical vapor deposition method and plasma etch process etc., and the typical etching as silicon or insulating material silicon oxide needs to use plasma etching equipment.Plasma etching equipment as shown in Figure 1, plasma etching equipment comprises a reaction chamber 1, comprises pedestal 33, pedestal is connected with radio-frequency power supply bottom reaction chamber.Pedestal is provided with the pending substrate 30 of electrostatic chuck 34 for placing above fixing electrostatic chuck.Electrostatic chuck periphery also comprises an even regulation ring 36, by the process uniformity regulating ring material, the shape even design of thickness can improve the relative neutral region of substrate 30 fringe region.In reaction chamber, the top relative with substrate comprises a distribution device in gas-fluid as gas spray 40, and gas spray is connected to an external air source 50.In plasma etching, the design of adjustable ring plays a very important role to Substrate treatment effect, such as adjustable ring Material selec-tion is different, particularly that the radio-frequency power in feed-in pedestal 33 can be caused to be assigned to substrate center region is different with the ratio of fringe region for the difference of conductive characteristic, and further plasma distribution also can be different;
Due to substrate edge position, there is gap between substrate edge and adjustable ring in the reason of space structure, and there is rf electric field intensity and temperature between pedestal 33 and adjustable ring 36 also can be different.The refrigerating gas of flowing is there is as helium, so substrate 30 has stable and suitable temperature between electrostatic chuck 34 upper surface and substrate 30 lower surface.Electrostatic chuck 34 periphery by adjustable ring 36 around, 36 by upper plasma produce heat effects can rise to higher temperature, this higher temperature can cause the sudden change of chemical reaction rate, and product also can be caused if polymer is at substrate edge region clustering.Simultaneously because rf electric field in prior art only passes into reaction chamber by pedestal 33, so region, adjustable ring 36 corresponding edge electric field strength will lower than central reaction region, so fringe region plasma concentration is lower, and the sheaths that formed of plasma is also thinner so also to bring at whole substrate surface upper plasma treatment effect uneven.So industry needs a kind of design newly, this design can obtain the treatment effect identical with central area in substrate edge region, effectively can control its temperature of fringe region simultaneously.
Summary of the invention
The problem that the present invention solves is to provide a kind of plasma treatment appts, the plasma concentration and sheaths uneven thickness of tasting substrate edge region can be mended, simultaneously can also adjustable ring around the temperature of the adjustable ring of substrate periphery for solving the problem, inventor provide a kind of plasma processing apparatus, comprising:
Reaction chamber, comprises a pedestal, pedestal is provided with electrostatic chuck in reaction chamber, pending substrate is arranged on described electrostatic chuck, it is peripheral that one adjustable ring is centered around described electrostatic chuck, edge compensation collar is around the periphery of described pedestal or electrostatic chuck, and be positioned at below adjustable ring, it is characterized in that: in described edge compensation ring, be embedded with electrode, a power distributing circuit is by first, second input receives the first and second radio-frequency power supplies and exports described first and second radio-frequency power supplies to described pedestal by the first output, export the first or second radio-frequency power supply to the electrode in described edge compensation ring by the second output simultaneously, described power distributing circuit also comprises the 3rd input and receives the first direct voltage source, and export described direct voltage to the electrode in described edge compensation ring by described second output.
Wherein power distributing circuit comprise four-input terminal receive the second direct voltage source and by first output export described second direct voltage, described first and second direct voltages can realize the electrostatic clamp to adjustable ring and pending substrate respectively.
Edge compensation ring comprises cooled gas path, refrigerating gas is passed into the contact-making surface between edge compensation ring and adjustable ring, to improve the delivered heat between adjustable ring and edge compensation ring further.
Described power distributing circuit comprises multiple match circuit and realizes mating of first, second radio-frequency power supply described and reaction chamber impedance.Also comprise a commutation circuit between described second output and first input end, make the first radio-frequency power supply optionally be connected to the second output by an inductance.
Edge compensation ring is arranged in described pedestal outwardly extending portion, or described edge compensation ring is fixed on insulating material ring (52), and described insulating material ring (52) is fixed in pedestal outwardly extending portion.Can also set gradually outside edge compensation ring and comprise dead ring and conductive shielding layer.Described edge compensation ring comprises vertical sidewall and the circular flat board of top of below, described in bury electrode underground and extend inside circular dull and stereotyped lateral, described adjustable ring is positioned on circular flat board.
Described edge compensation ring is made up of aluminium oxide, while realization insulation, have good heat conductivility, realizes controlling the better temperature of adjustable ring.
Accompanying drawing explanation
Fig. 1 is the structural representation of prior art semiconductor processing device;
Fig. 2 a is the base construction figure with edge compensation ring first embodiment of the present invention;
Fig. 2 b has edge compensation ring second embodiment base construction figure of the present invention;
Fig. 3 is the present invention to the circuit structure diagram of pedestal and edge compensation ring radiofrequency supplier and DC power supply;
Fig. 4 is application post plasma concentration profile of the present invention.
Embodiment
Please refer to Fig. 2 a, 2b understands the present invention program, and Fig. 2 a is depicted as the amplification assumption diagram of pedestal 33 in Fig. 1.Comprise multiple coolant duct in pedestal 33 of the present invention to maintain the temperature of pedestal, pedestal 33 is connected with the A output in the circuit shown in Fig. 3.Pedestal 33 top is anti-is equipped with electrostatic chuck 34, and pending substrate 30 is fixed on above electrostatic chuck 34.An adjustable ring 36 is centered around electrostatic chuck outside, and and there is gap between electrostatic chuck 34 and substrate.The material of this adjustable ring 36 can be quartz or silicon, carborundum, aluminium oxide etc., and the selection of its shape and material, to obtain for the purpose of more homogeneous Electric Field Distribution, can have different designs according to different application scenarios.Adjustable ring 36 is placed in the extension of pedestal 33 by an edge compensation ring 32.Be centered around and also comprise the dead ring 38 that insulating material makes outside pedestal 33 and focusing ring, also comprise conductive shielding layer 39 outside dead ring 38, only can spread the region that can not be diffused between pedestal lateral wall and reaction chamber inwall by limitation of radio frequency electric field in conversion zone by insulating barrier and conductive shielding layer.Edge compensation ring 32 of the present invention can have ceramic material to make, typical in aluminium oxide.Edge compensation ring 32 inside also comprises an electrode 321, and this electrode 321 is connected with the B output in the circuit shown in Fig. 3.
Be illustrated in figure 3 the optional power supply circuit structure chart of the present invention, power supply circuit of the present invention comprises the first radio-frequency power supply such as RF1 in figure and exports radio-frequency power to A output by a first match circuit M1 and buffer circuit 20.First match circuit M1 comprises a variable capacitance Cv1 and fixed capacity C1, and an inductance L 1, by radio-frequency power A or the B output outputted in reaction chamber as much as possible regulating variable capacitance Cv1 to make radio-frequency power supply RF1 export.The present invention also comprises the second radio-frequency power supply RF2 and is connected to A output by match circuit M2.Second match circuit M2 comprises the second inductance L 2 second electric capacity C2 of a second variable capacitance Cv2 and mutually series connection, and the second match circuit M2 and the first match circuit have similar function, and what only regulate is the matched impedance of the second radio-frequency power supply.Buffer circuit 20 comprises the 3rd inductance L 3 and the 3rd electric capacity C3, can prevent from the power output of the second radio-frequency power supply RF2 from oppositely flowing in the first radio-frequency power supply causing overheatedly burning power supply by buffer circuit.A first DC power supply DC1 is connected to A output by a radio frequency filter circuit (RF filter).First radio-frequency power supply RF1 also distributes electric capacity Ca by one and is connected to output B, by regulating variable distribution electric capacity to distribute to output to the radio-frequency power ratio between A and B.Inductance L 4 and commutation circuit S0 is also comprised between first radio-frequency power supply RF1 and B output, commutation circuit S0 can make the output of L4 optionally be connected to one of output B and Lp, it is different that the rf electric field phase place that can make to output to B when being switched to LP and RF1 export, and realizes the rf electric field phase adjusted outputted between side a and b.The input of inductance L 4 is also connected to the second DC power supply DC2 by a radio frequency filter circuit.Wherein the first DC power supply DC1 can provide the direct voltage even going up kilovolt up to hundreds of to make the electrode in electrostatic chuck 34 can induce electric charge on substrate, and substrate is firmly adsorbed on electrostatic chuck by electrostatic attraction.Second DC power supply DC2 provides the direct voltage of similar magnitude, and make the electrode 321 in edge compensation ring 32 produce enough direct voltages, adjustable ring 36 is firmly adsorbed on edge compensation ring 32.
In power supply circuit of the present invention, the first radio-frequency power supply RF1 can be used for the rf electric field should with upper frequency, such as 13Mhz, 27Mhz, 60Mhz and 100Mhz etc. for generation of and maintain plasma.Second radio-frequency power supply RF2 can provide the rf electric field with lower frequency, can be such as 2Mhz, for controlling the sheath layer thickness of pedestal upper surface or substrate upper surface, and the final energy size controlling incident ion.Also can exchange two radio-frequency power supply link positions, the input that RF1 is connected to the second match circuit M2 simultaneously RF2 is connected to the input of the first match circuit M1, and this does not affect the realization of the object of the invention.
Middle figure 101 is the medium ion concentration distribution curve of prior art as shown in Figure 4, start to decline at substrate edge (150mm place) position plasma concentration as seen from the figure, this can affect the homogeneity of plasma treatment, the power supply circuits that the present invention's application is special as shown in Figure 3, not only the source radio-frequency power with upper frequency and the biased radio-frequency power with lower frequency are applied to the pedestal 33 below substrate, and by the radio-frequency power supply of one of them, be centered around in the edge compensation ring 32 of substrate periphery as source radio-frequency power supply is applied to.By regulate and distribute electric capacity size can regulation output to the watt level in edge compensation ring, thus regulate the plasma concentration that the electric field produced in edge compensated loop is formed.As in Fig. 4,103 plasma densities being depicted as the generation of edge compensation ring distribute, complementary with the plasma density distribution curve produced in pedestal, both superpositions can produce more homogeneous plasma distribution.When applying biased radio-frequency power supply to electrode in edge compensation ring, although plasma density distribution directly can not be changed, but due to sheath layer thickness can be changed, and sheath layer thickness also can change plasma form, so also partly can change the distribution of plasma when plasma density is constant.Simultaneously adopt the inventive method time due to sheath layer thickness adjustable, and the radio-frequency (RF) phse being applied to edge compensation ring also can from be applied to the different of pedestal, so ion incident angles and the energy in substrate edge region significantly can be changed, thus the problems such as substrate edge region etch through hole out of plumb can be improved.
Additionally with the addition of a radio frequency electrode due to edge region of the present invention and pass into radio-frequency power, so edge region can produce more heat than prior art, the plasma of fringe region higher concentration also can the adjustable ring 36 on heating base surface, finally causes adjustable ring 36 to cross the homogeneity of thermal impact plasma treatment.The present invention in the edge compensation ring below adjustable ring 36 electrode 321 pass into high-voltage DC power supply DC2 simultaneously, edge compensation ring 32 is made to form an electrostatic clamp ring, adjustable ring 36 and edge compensation ring upper surface are close to, and more heat is transmitted in the pedestal of below and has been led away.In prior art owing to there is no extra clamping device so only have gravity to make both contact-making surfaces be close between adjustable ring 36 and edge compensation ring 32, but because adjustable ring weight is little, so reality contact-making surface between the two exists a large amount of space, subregion is only had to be straight Contact and to have compared with high-heat conductive efficency.Because these contact zones are relevant to the evenness of contact-making surface between adjustable ring 36 and compensated loop 32, and these two parts cannot reach very homogeneous evenness in the course of processing, so in each plasma treatment appts between the two contact area be different in the distribution of whole adjustable ring 36 lower surface, so the Temperature Distribution of adjustable ring is also slightly different on different plasma treatment appts.The present invention applies high-voltage DC power supply in edge compensation ring can make have very large power to be close between adjustable ring and edge compensation ring 32, also just significantly adds heat transfer efficiency between the two.Optionally can pass into refrigerating gas between two binding faces, as helium, by the refrigerating gas flowed with waste heat to increase heat transfer efficiency further.Refrigerating gas can enter the upper surface of compensated loop 32 from bottom to top through edge compensation ring 32.Exert pressure downwards owing to there being electrostatic attraction so the air pressure of refrigerating gas can be selected comparatively large, and adjustable ring 36 jack-up that top can not be arranged.
Fig. 2 b is depicted as pedestal 33 amplification assumption diagram of second embodiment of the invention, in figure, edge ring 52 identically with material in the first embodiment has insulating ceramic materials to make with 58, but shape is different, around the protuberance being centered around pedestal 33, cover protuberance end face and side.A cover ring 35 covers this edge ring 52 and dead ring 58 periphery, cover ring 35 comprises the circular flat board being positioned at downward vertical sidewall and top and extending internally, an adapter ring 37 is centered around outside cover ring 35, and a conductive shielding layer 39 is looped around outside pedestal.Wherein comprise an electrode in cover ring to extend to the inside in head slab.Adjustable ring 36 is placed in cover ring 35.The rf electric field of edge compensation and the electrode 351 that is applied to for the direct voltage of Electrostatic Absorption in cover ring 35 in second embodiment of the invention, isolating so electrode is not subject to the impact of the rf electric field produced in pedestal in 351 owing to there being insulation material layer 52 and 58 between electrode 351 and pedestal 33, more can realizing the independent control to exporting radio-frequency power.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. a plasma processing apparatus, comprising:
Reaction chamber, comprises a pedestal, pedestal is provided with electrostatic chuck in reaction chamber, pending substrate is arranged on described electrostatic chuck;
It is peripheral that one adjustable ring is centered around described electrostatic chuck, and edge compensation collar around the periphery of described pedestal or electrostatic chuck, and is positioned at below adjustable ring;
It is characterized in that: in described edge compensation ring, be embedded with an electrode;
A power distributing circuit receives the first and second radio-frequency power supplies by first, second input and exports described first and second radio-frequency power supplies to described pedestal by the first output, exports the first or second radio-frequency power supply to the electrode in described edge compensation ring by the second output simultaneously;
Described power distributing circuit also comprises the 3rd input and receives the first DC power supply, and exports described direct voltage to the electrode in described edge compensation ring by described second output.
2. plasma processing apparatus as claimed in claim 1, is characterized in that, described power distributing circuit comprises four-input terminal and receives the second direct voltage source and export described second direct voltage by the first output.
3. plasma processing apparatus as claimed in claim 1, it is characterized in that, described edge compensation ring comprises cooled gas path, refrigerating gas is passed into the contact-making surface between edge compensation ring and adjustable ring.
4. plasma processing apparatus as claimed in claim 1, is characterized in that, described power distributing circuit comprises multiple match circuit and realizes mating of first, second radio-frequency power supply described and reaction chamber impedance.
5. plasma processing apparatus as claimed in claim 1, is characterized in that, also comprise a commutation circuit between described second output and first input end, make the first radio-frequency power supply optionally be connected to the second output by an inductance.
6. plasma processing apparatus as claimed in claim 1, it is characterized in that, described edge compensation ring is arranged in described pedestal outwardly extending portion.
7. plasma processing apparatus as claimed in claim 1, it is characterized in that, described edge compensation ring is made up of aluminium oxide.
8. plasma processing apparatus as claimed in claim 1, it is characterized in that, described edge compensation ring is fixed on insulating material ring, and described insulating material ring is fixed in pedestal outwardly extending portion.
9. plasma processing apparatus as described in claim 6 or 8, is characterized in that, also comprises dead ring and conductive shielding layer successively outside edge compensation ring.
10. plasma processing apparatus as claimed in claim 8, it is characterized in that, described edge compensation ring comprises vertical sidewall and the circular flat board of top of below, described in bury electrode underground and extend inside circular dull and stereotyped lateral, described adjustable ring is positioned on circular flat board.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310753338.XA CN104752143B (en) | 2013-12-31 | 2013-12-31 | Plasma treating device |
| TW103142655A TWI544106B (en) | 2013-12-31 | 2014-12-08 | Electrolyte processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310753338.XA CN104752143B (en) | 2013-12-31 | 2013-12-31 | Plasma treating device |
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| Publication Number | Publication Date |
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| CN104752143A true CN104752143A (en) | 2015-07-01 |
| CN104752143B CN104752143B (en) | 2017-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310753338.XA Active CN104752143B (en) | 2013-12-31 | 2013-12-31 | Plasma treating device |
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| CN (1) | CN104752143B (en) |
| TW (1) | TWI544106B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017228526A (en) * | 2016-06-22 | 2017-12-28 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | System and method for controlling directivity of ions in edge region by using electrode in coupling ring |
| TWI767618B (en) * | 2020-04-02 | 2022-06-11 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma reactor and method for adjusting radio frequency power distribution |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| CN111670491A (en) | 2018-01-31 | 2020-09-15 | 朗姆研究公司 | Electrostatic chuck (ESC) pedestal voltage isolation |
| US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
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| JP2017228526A (en) * | 2016-06-22 | 2017-12-28 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | System and method for controlling directivity of ions in edge region by using electrode in coupling ring |
| KR20180000291A (en) * | 2016-06-22 | 2018-01-02 | 램 리써치 코포레이션 | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
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| TWI767618B (en) * | 2020-04-02 | 2022-06-11 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma reactor and method for adjusting radio frequency power distribution |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201525184A (en) | 2015-07-01 |
| CN104752143B (en) | 2017-05-03 |
| TWI544106B (en) | 2016-08-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |