CN100382276C - Substrate mounting table, substrate processing apparatus and substrate processing method - Google Patents
Substrate mounting table, substrate processing apparatus and substrate processing method Download PDFInfo
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- CN100382276C CN100382276C CNB2006100653304A CN200610065330A CN100382276C CN 100382276 C CN100382276 C CN 100382276C CN B2006100653304 A CNB2006100653304 A CN B2006100653304A CN 200610065330 A CN200610065330 A CN 200610065330A CN 100382276 C CN100382276 C CN 100382276C
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Abstract
The invention discloses a base plate carrying table (17), which is characterized by the following: the cylindrical gap part (30) is installed between inner cold-producing medium chamber (28) and outboard cold-producing medium chamber (29); the distributing pipe (30a) connecting to the gap part (30) extends to the lower part of the base plate carrying table (17) which connects to the vacuum air pump (72) through valve (71); reducing the pressure to the regular vacuum state by the vacuum air pump (72) makes the gap part (30) in vacuum state and reduces the conductivity of gap part (30) for heat insulation element. The invention can improve the temperature control of base plate carrying table, which realizes the homogenization treatment in the chip surface.
Description
Technical field
The present invention relates to a kind ofly when on processed substrates such as semiconductor wafer, carrying out various processing, put the substrate mounting table that processed substrate uses, the substrate processing method using same that has the substrate board treatment of this substrate mounting table and use this substrate board treatment that processed substrate is handled.
Background technology
In recent years, when making semiconductor device, will put on substrate mounting table as the semiconductor wafer (following only claim " wafer ") of processed substrate earlier, then, implement piecewise under this state to expect that this one chip processing of handling has become main flow.In this one chip is handled, when guaranteeing the reproducibility of handling between a plurality of wafers, guarantee that the process uniformity in a slice wafer surface is also extremely important.For example, when on wafer, carrying out plasma etch process, have temperature controlling function by making substrate mounting table, and the Temperature Distribution in the wafer surface is controlled, carry out chemical reaction etc. equably, thereby be implemented in the uniformity of the processing in the surface.
And, relevant temperature control technique as the substrate mounting table of prior art, a kind of method of plasma processing has been proposed (for example, patent documentation 1), this method is by the inside at substrate mounting table cold-producing mediums inboard and two systems in the outside to be set, and make the maintenance temperature difference in these two zones, offset uneven Temperature Distribution on the wafer, thereby realize the equalizing temperature in the wafer surface.
Patent documentation 1: Japanese kokai publication hei 9-17770 communique (summary etc.)
In the ordinary course of things, in putting the substrate mounting table of wafer, use the good aluminium metal materials such as (Al) of heat transfer property.Therefore, the refrigerant flow path of two systems is set even adopt patent documentation 1 described method, and in substrate mounting table, keeps the temperature difference, still can produce heat transmission, therefore, temperature control or response variation, and be difficult to produce the temperature difference of expection.In other words, even the refrigerant flow path of two systems is set specially, the boundary in two zones is still indeterminate, and, because the influence of transmitting from the heat in two zones, carry out also unusual difficulty of adjustment rapidly, therefore, so just can't high precision the Temperature Distribution of ground control basal plate mounting table.Consequently, can't realize the homogenizing of temperature in the wafer surface and the homogenizing of processing fully.
Summary of the invention
Therefore, the objective of the invention is to substrate mounting table is carried out temperature control accurately, thereby realize the processing homogenizing in the wafer surface.
In order to solve above-mentioned problem, first viewpoint of the present invention provides a kind of substrate mounting table, it is characterized in that: be processed substrate is carried out temperature control and puts the substrate mounting table that described processed substrate is used, wherein,
Be provided with many separate streams that adjustment is passed through with medium on described substrate mounting table, simultaneously,
At least between two described streams, be provided with insulation part.
As described in first viewpoint, by between stream that adjustment is passed through with medium and stream, insulation part being set, not only can improve the thermoregulator independence of these two streams, can also shorten the adjustment time.
In above-mentioned first viewpoint, described insulation part can be formed drum.In addition, with the periphery zone of comparing with this central portion outside being arranged in described stream is set respectively, can divides this two zones by described insulation part in the central portion zone of described substrate mounting table.
Second viewpoint of the present invention provides a kind of substrate mounting table, it is characterized in that, be processed substrate is carried out temperature control and puts the substrate mounting table that described processed substrate is used, wherein,
Be provided with a plurality of separate streams that adjustment is passed through with medium on described substrate mounting table, simultaneously,
At least between described two streams, be provided with space part.
As described in second viewpoint, by between the stream that passes through with medium in adjustment and the stream space part being set, the conductivity of heat of this part is regulated, not only can improve the thermoregulator independence of these two streams, can also shorten the adjustment time.Therefore, can come temperature in the control basal plate surface according to the processing substrate condition.
In above-mentioned second viewpoint, described space part can be formed drum.In addition, also can with the periphery zone of comparing with this central portion outside being arranged in described stream be set respectively, divide this two zones by described space part in the central portion zone of described substrate mounting table.
In addition, described space part can cylindrical shape erects towards the top from the bottom of described substrate mounting table, and its top is the shape of horizontal expansion.
In addition, can also will switch to decompression state in the described space part and import the state that fluid is arranged.In addition, described space part can be connected with the exhaust equipment that its inside is carried out exhaust.In addition, described space part also can be connected with the fluid supply appts to its internal feed fluid.In addition, can also have the pressure conditioning equipment that the pressure in the described space part is regulated.In addition, can also be at the internal configurations temperature control equipment of described space part.
The 3rd viewpoint of the present invention provides a kind of substrate board treatment with above-mentioned first viewpoint or the described substrate mounting table of second viewpoint.In this case, thus also can be to make action of plasma on processed substrate, implement the plasma processing apparatus that expection is handled.
The 4th viewpoint of the present invention provides a kind of substrate processing method using same, it is characterized in that, be the processed substrate that puts on the substrate mounting table in substrate board treatment is carried out temperature control, and the substrate processing method using same of expecting processing simultaneously, wherein,
Be provided with many separate streams that adjustment is passed through with medium on described substrate mounting table, simultaneously, at least between described two streams, be provided with insulation part, by adjustment is circulated respectively in the described stream with medium, processed substrate carried out temperature control on one side implement handle on one side.
In above-mentioned the 4th viewpoint, also can with the periphery zone of comparing with this central portion outside being arranged in described stream be set respectively in the central portion zone of described substrate mounting table, carry out heat insulation by described insulation part to these two zones.
The 5th viewpoint of the present invention provides a kind of substrate processing method using same, it is characterized in that, be the processed substrate that puts on the substrate mounting table in substrate board treatment is carried out temperature control, and the substrate processing method using same of expecting processing simultaneously, wherein,
Be provided with a plurality of separate streams that adjustment is passed through with medium on described substrate mounting table, simultaneously, at least between described two streams, space part is set, by adjustment is circulated respectively in the described stream with medium, processed substrate carried out temperature control on one side implement handle on one side.
In above-mentioned the 5th viewpoint, also can with the periphery zone of comparing with this central portion outside being arranged in described stream be set respectively in the central portion zone of described substrate mounting table.In this case, by being carried out vacuum exhaust, described space part make it become vacuum state, not only can make described two zones heat insulation mutually, fluid can also be imported described space part and adjust conductivity of heat between described two zones, perhaps fluid is imported described space part and adjust pressure inside, thereby adjust the conductivity of heat between described two zones.
The 6th viewpoint of the present invention provides a kind of substrate processing method using same, it is characterized in that, at least comprise: to put that processed substrate on the substrate mounting table in substrate board treatment is implemented operation that first step handles and after this first step is handled the operation of second step of enforcement, wherein
Be provided with a plurality of separate streams that adjustment is passed through with medium on described substrate mounting table, simultaneously, between described two streams, space part be set at least,
Adjustment is circulated respectively in the described stream with medium, simultaneously, between the processing of the processing of described first step and described second step, change the conductivity of heat of described space part, thereby while control the temperature of processed substrate and implement to handle.
In above-mentioned the 6th viewpoint, also can there be the state of fluid to change conductivity of heat with importing by described space part being switched to vacuum state.
The 7th viewpoint of the present invention provides a kind of control program, it is characterized in that: when moving this program on computers, described substrate mounting table is controlled, thereby implemented each described substrate processing method using same in above-mentioned the 4th viewpoint to the six viewpoints.
The 8th viewpoint of the present invention provides a kind of computer-readable storage medium, it is characterized in that: be used for storing the control program of operation on computers.
When the described control program of operation, employed described substrate board treatment in each described substrate processing method using same in above-mentioned the 4th viewpoint to the six viewpoints is controlled.
The 9th viewpoint of the present invention provides a kind of substrate board treatment, it is characterized in that, comprising:
The container handling that holds processed substrate;
Put the substrate mounting table of described processed substrate; With
Control in described container handling inside, thereby on processed substrate, implement the control part of each described substrate processing method using same in above-mentioned the 4th viewpoint to the six viewpoints.
The invention effect
Owing to can improve the temperature control of substrate mounting table according to the present invention, therefore, can control it as suitable temperature, and guarantee the uniformity of processing in the processed substrate surface according to the processing substrate condition.
Description of drawings
Fig. 1 is the summary sectional view of the related plasma-etching apparatus of first execution mode of the present invention.
Fig. 2 is the organigram of adaptation in the plasma-etching apparatus of Fig. 1.
Fig. 3 is near the major part sectional view the substrate mounting table.
Fig. 4 is the sectional view of I-I ' line among Fig. 3.
Fig. 5 is the major part sectional view of the related plasma-etching apparatus of second execution mode.
Fig. 6 is to use the flow chart of an example second step process of the plasma-etching apparatus of second execution mode.
Fig. 7 is the major part sectional view of the related plasma-etching apparatus of the 3rd execution mode.
Fig. 8 is the sectional view of II-II ' line in Fig. 7.
Symbol description
10 ... chamber (container handling)
13 ... first base plate
14 ... second base plate
15 ... the 3rd base plate
16 ... the 4th base plate
17 ... substrate mounting table (lower electrode)
28 ... cool room (inboard)
29 ... cool room (outside)
30 ... space part
30a ... pipe arrangement
34 ... upper electrode
44 ... feeder rod used therein
46,88 ... adaptation
48 ... first high frequency electric source
50 ... variable DC power supply
51 ... controller
52 ... switch
66 ... handle the gas supply source
84 ... exhaust apparatus
90 ... second high frequency electric source
W ... semiconductor wafer (handled object)
Embodiment
With reference to the accompanying drawings, preferred implementation of the present invention is described.
Fig. 1 is the summary sectional view as the plasma-etching apparatus 100 of substrate board treatment that first execution mode of the present invention relates to.
This plasma Etaching device 100 is capacitance coupling type parallel flat plasma-etching apparatus, and it has the slightly cylindrical circular chamber (container handling) 10 that for example is made of by the aluminium of anodized the surface.These chamber 10 protected ground connection.
In the bottom of chamber 10, the insulation board of making by materials such as potteries 12 and from columniform first base plate 13 of downside lamination successively, second base plate 14, the 3rd base plate 15, and on the 3rd base plate 15 lamination the 4th base plate 16.These first～the 4th base plates 13,14,15,16 are for example made of aluminum, and are bonded into an integral body and form substrate mounting table 17.Put semiconductor wafer W in the above as processed substrate.In addition, substrate mounting table 17 also can be used as lower electrode.
On substrate mounting table 17, be provided with the electrostatic chuck 18 that utilizes static to adsorb to keep semiconductor wafer W.This electrostatic chuck 18 has the structure of the electrode 20 that utilizes a pair of insulating barrier or insulation board to clip to be made of conducting film, and electrode 20 is electrically connected with DC power supply 22.Then, be used to electrostatic force such as Coulomb force, semiconductor wafer W absorption is remained on the electrostatic chuck 18 from the direct voltage generation of DC power supply 22.
Around the electrostatic chuck 18 (semiconductor wafer W), on the 4th base plate 16, be provided with the focusing ring (corrector loop) 24 of the conductivity of for example making by silicon that is used for improving etch uniformity.For example be provided with the inwall parts 26 of the drum of making by quartz in the side of substrate mounting table 17.
In the inside of substrate mounting table 17, be provided with the inboard cryogen chamber 28 of ring-type and the ring-type outside cryogen chamber 29 of this inboard cryogen chamber 28 of encirclement.In these cryogen chamber 28,29, by being arranged on outside cooling device not shown in the figures, supply with the cold-producing medium (for example cooling water) of set point of temperature by pipe arrangement 28a, 29a, and discharge, carry out the circulation of cold-producing medium with this by pipe arrangement 28b, 29b not shown in the figures herein.So, just can come the treatment temperature of the semiconductor wafer W on the control basal plate mounting table 17 according to the temperature of cold-producing medium of circulation.Between the inboard cryogen chamber 28 of substrate mounting table 17 and outside cryogen chamber 29, be provided with the space part 30 of drum.This space part 30 is connected with vacuum pump 72 as exhaust equipment by valve 71.Concrete structure to this space part 30 is in the back described.
And, supply with heat-conducting gas (for example helium) above electrostatic chuck 18 and between the back side of semiconductor wafer W by air supply pipe 32 from heat-conducting gas supply arrangement not shown in the figures.
Above as the substrate mounting table 17 of lower electrode, according to the mode relative upper electrode 34 that be arranged in parallel with pedestal mounting table 17.So, upper electrode 34 and just become the plasma span as the space between the pedestal mounting table 17 of lower electrode.Upper electrode 34 forms an opposite face, and this face is with relative as the semiconductor wafer W on the substrate mounting table 17 of lower electrode and contact with the plasma span.
This upper electrode 34 is supported in the top of chamber 10 by insulating properties shield member 42, is made of battery lead plate 36 and electrode support 38, and wherein, battery lead plate 36 constitutes the opposite face relative with substrate mounting table 17, and has a plurality of taps 37; Electrode support 38 supports this battery lead plate 36 in the mode of freely loading and unloading, and has the water-cooling structure of being made by conductive material (for example the surface is by the aluminium of anodized).Battery lead plate 36 is less low-resistance electric conductor or the semiconductor of Joule heat preferably, from strengthening the preferred use silicon-containing material of viewpoint of corrosion stability.From above-mentioned this viewpoint, battery lead plate 36 preferably is made of silicon or SiC.Be provided with gas diffusion chamber 40 in the inside of electrode support 38, a plurality of air vent holes 41 that are communicated with steam vent 37 extend to the below from this gas diffusion chamber 40 always.
Be formed with on electrode support 38 and will handle the air guide port 62 that gas imports gas diffusion chamber 40, this air guide port 62 is connected with air supply pipe 64, and air supply pipe 64 is connected with processing gas supply source 66.On air supply pipe 64, be disposed with gas flow controller (MFC) 68 and switch valve 70 from the upper reaches.The gas that etching is used diffuses to gas diffusion chamber 40 from the air supply pipe 64 that is connected with processing gas supply source 66, through air vent hole 41 and steam vent 37, is expelled to the plasma span with the shower shape.In other words, upper electrode 34 can be as supplying with the spray head of handling gas.
Upper electrode 34 is electrically connected by adaptation 46 and feeder rod used therein 44 and first high frequency electric source 48.The above frequency (for example High frequency power of 13.56～60MHz) of first high frequency electric source, 48 output 13.56MHz.The effect of adaptation 46 is, inside (perhaps output) impedance of first high frequency electric source 48 is mated mutually with load impedance, and makes the output impedance of first high frequency electric source 48 consistent with the load impedance outward appearance during generation plasma in chamber 10.The lead-out terminal of adaptation 46 is connected with the upper end of feeder rod used therein 44.
On the other hand, above-mentioned upper electrode 34 also is electrically connected with variable DC power supply 50 except with first high frequency electric source 48 is connected.Variable DC power supply 50 preferably constitutes with bipolar power supply.Specifically, this variable DC power supply 50 is connected with upper electrode 34 by above-mentioned adaptation 46 and feeder rod used therein 44, utilizes switch (ON/OFF switch) 52 to control sending electricity carry out switch (ON/OFF).Can control the polarity of variable DC power supply 50 and the switch of electric current, voltage and switch 52 by controller 51.
As shown in Figure 2, adaptation 46 has first variable capacitor of establishing from the sending electric wire 49 branches of first high frequency electric source 48 54 and is arranged on the second dirty variable capacitor 56 of this breakout that send electric wire 49, brings into play above-mentioned functions by these capacitors.In addition, adaptation 46 is provided with the filter 58 of the high frequency (for example 2MHz) of the high frequency (for example 60MHz) that captures first high frequency electric source 48 and second high frequency electric source described later, thereby guarantees that dc voltage and current (the following direct voltage that only claims) can be supplied to upper electrode 34 effectively.That is, the direct current of variable DC power supply 50 is connected with sending electric wire 49 by filter 58.This filter 58 is made of coil 59 and capacitor 60, captures the high frequency of first high frequency electric source 48 and the high frequency of second high frequency electric source by these parts.
The mode of extending according to the top from the sidewall of chamber 10 along the height and position of upper electrode 34 is provided with the earthing conductor 10a of drum, and the head portion of the earthing conductor 10a of this drum is by the insulating element 44a and top feeder rod used therein 44 electric insulations of tubular.
Substrate mounting table 17 as lower electrode is electrically connected by the adaptation 88 and second high frequency electric source 90.By from this second high frequency electric source 90 to substrate mounting table 17 supply high frequency electric power, and with iontophoresis semiconductor wafer W one side as lower electrode.Second high frequency electric source 90 output 2～less than the electric power of the frequency in the 13.56MHz scope (for example High frequency power of 2MHz).The effect of adaptation 88 is, inside (perhaps output) impedance of second high frequency electric source 90 is mated mutually with load impedance, and makes the internal driving of second high frequency electric source 90 consistent with the load impedance outward appearance during generation plasma in chamber 10.
Upper electrode 34 is electrically connected with low pass filter (LPF) 92, makes the high frequency (60MHz) from first high frequency electric source 48 not pass through this low pass filter 92, and makes the high frequency (2MHz) from second high frequency electric source 90 pass through low pass filter 92 and ground connection.This low pass filter (LPF) 92 preferred LP filter or LC filters of using constitute, and still, owing to only just can provide bigger reactance to the high frequency (60MHz) from first high frequency electric source 48 with a lead, therefore, also can adopt this method.On the other hand, be electrically connected as the substrate mounting table 17 and the high pass filter (HPF) 94 of lower electrode, this high pass filter (HPF) 94 makes the high frequency (60MHz) from first high frequency electric source 48 pass through ground.
Be provided with exhaust outlet 80 in the bottom of chamber 10, exhaust apparatus 84 links to each other with this exhaust outlet 80 by blast pipe 82.Exhaust apparatus 84 has turbomolecular pump equal vacuum pump, can will be decompressed to the vacuum degree of expection in the chamber 10.In addition, what the sidewall of chamber 10 was provided with semiconductor wafer W moves into mouthfuls 85, by gate valve 86 can switch this move into mouthfuls 85.In addition, be used for preventing that can free handling mode to be provided with the secondary product of etching (deposit) is attached to the deposit guard shield 11 on the chamber 10 on the inwall of chamber 10.That is, deposit guard shield 11 constitutes the chamber wall.In addition, the periphery at inwall parts 26 also is provided with deposit guard shield 11.Between the deposit guard shield 11 of the deposit guard shield 11 of the chamber of chamber 10 bottoms wall side and inwall parts 26 sides, be provided with exhaustion plate 83.Preferably use and on aluminium sheet, for example cover Y
2O
3Deng the pottery material as deposit guard shield 11 and exhaustion plate 83.
Each component part of plasma-etching apparatus 100 is connected with the Working Procedure Controlling device 95 that CPU is housed and controlled by it.Working Procedure Controlling device 95 links to each other with user interface 96, and user interface 96 is by the keyboard of process management personnel input command for managing plasma Etaching device 100 or can watch the display etc. of the ruuning situation of plasma-etching apparatus 100 to constitute.
In addition, Working Procedure Controlling device 95 links to each other with storage part 97, and stored record has the scheme of the control program (software) that is used under the control of Working Procedure Controlling device 95 realizing the various processing that moved in the plasma-etching apparatus 100 or treatment conditions data etc. in the storage part 97.
And, as required,, from storage part 97, access scheme arbitrarily, and it is moved in Working Procedure Controlling device 95 by from instruction of user interface 96 etc.So, under the control of Working Procedure Controlling device 95, can in plasma-etching apparatus 100, implement the processing of expection.In addition, the storage medium (for example CD-ROM, hard disk, floppy disk, flash memory etc.) that can also use computer-readable to get is stored schemes such as described control program or treatment conditions data, perhaps transmits at any time and online use from other device (for example passing through special circuit).
When in the plasma-etching apparatus 100 of above-mentioned this structure, carrying out etch processes, at first, make gate valve 86 be in open mode, take out of mouthfuls 85 and will move in the chamber 10 by moving into, and put on substrate mounting table 17 as the semiconductor wafer W of etch target.Then, be used for etched processing gas flow according to the rules and be supplied to gas diffusion chamber 40 from handling gas supply source 66, and supply in the chamber 10 by air vent hole 41 and steam vent 37, simultaneously, utilizing in 84 pairs of chambers 10 of exhaust apparatus and carry out exhaust, is within the scope of for example 0.1～150Pa with the design of pressure in the chamber.
Like this, under the state that etching gas is imported in the chamber 10, apply the High frequency power (for example 60MHz) that plasma generates usefulness from first high frequency electric source 48 power according to the rules to upper electrode 34, simultaneously, apply the high frequency (for example 2MHz) that is used to import ion to substrate mounting table 17 from second high frequency electric source 90 power according to the rules as lower electrode.Then, apply the direct voltage of regulation to upper electrode 34 from variable DC power supply 50.And, apply direct voltage from the DC power supply 22 of electrostatic chuck 18 to the electrode 20 of electrostatic chuck 18, semiconductor wafer W is fixed on the substrate mounting table 17.
The processing gas that the steam vent 37 that forms from the battery lead plate 36 of upper electrode 34 is discharged, by upper electrode 34 that High frequency power produced and in and by plasmaization as the discharge of the aura (glow) between the substrate mounting table 17 of lower electrode, so processed of semiconductor wafer W just by free radical or the etching of ion institute that this plasma produced.
In this plasma-etching apparatus 100, owing to supply with the High frequency power of lower frequency range (more than the irremovable 5～10MHz of ion) to upper electrode 34, therefore, not only can under the best disassociation state, improve the density of plasma, even and if more also can form high-density plasma under the low pressure conditions.Like this, when forming plasma, apply the direct voltage of specified polarity and size to upper electrode 34 from variable DC power supply 50.
In addition, preferably control the applied voltage of variable DC power supply 50, make the self-bias voltage V on upper electrode 34 surfaces by controller 51
DcDeepen, in other words, make the self-bias voltage V on upper electrode 34 surfaces
DcAbsolute value increase, thereby as outside execute the upper electrode 34 of electrode the surface be the sputter effect that the surface of battery lead plate 36 obtains regulation (appropriateness).If the High frequency power that applies from first high frequency electric source 48 is lower, so, polymer will be attached on the upper electrode 34, but, by apply the direct voltage of appropriateness from variable DC power supply 50, just can be to carrying out sputter attached to the polymer on the upper electrode 34, thus the surface of upper electrode 34 cleaned.Simultaneously, can also on semiconductor wafer W, supply with the polymer of optimised quantity, thereby solve the rough surface problem of resist film.
Below, substrate mounting table 17 is described in detail.
Fig. 3 is to be the sectional view of the major part at center with the substrate mounting table in the plasma-etching apparatus 100 of Fig. 1 17, and Fig. 4 is the horizontal sectional view of I-I ' line in Fig. 3.As mentioned above, be formed with the inboard cryogen chamber 28 of annular and the cryogen chamber 29 in the outside respectively in the inside of substrate mounting table 17.In these cryogen chamber 28,29, supply with cold-producing mediums such as cooling water by pipe arrangement 28a, the 29a that supplies with usefulness, and it is discharged, thereby carry out the circulation of cold-producing medium respectively independently by pipe arrangement 28b, the 29b that discharges usefulness.
Therefore, in substrate mounting table 17, form respectively inboard cryogen chamber 28 around with outside cryogen chamber 29 around this two hot distinct area, i.e. zone of the zone of central portion and periphery.Then, between the inboard cryogen chamber 28 of substrate mounting table 17 and outside cryogen chamber 29, space part 30 is set, forms the boundary part of dividing these two zones.
In the present embodiment, the pipe arrangement 30a that is connected with space part 30 extends to the below of substrate mounting table 17 always, and this pipe arrangement 30a also is connected with vacuum pump 72 by valve 71.Utilize this vacuum pump 72 with being decompressed in the space part 30 after the specified vacuum state, can make the vacuum state that is in expection in the space part 30 by shut off valve 71.Vacuum state reduces the conductivity of heat of space part 30, thereby can be used as heat insulating member.For example, have the temperature difference in the central portion zone of substrate mounting table 17 with the periphery zone if want, then by space part 30 is carried out vacuum exhaust and makes it be used as heat insulating member, so just can improve and utilize cryogen chamber 28 and 29 to carry out thermoregulator independence, and improve and pass through the heat transfer response that cryogen chamber 28,29 interior cold-producing mediums produce, and, can also divide this two zones clearly.Like this, the effect of space part 30 is, not only can make the Temperature Distribution in the substrate mounting table of regulating by cryogen chamber 28,29 17 clear and definite, can also improve temperature control.Therefore, preferably set the configuration of space part 30 according to Temperature Distribution in the surface of the wafer W of supposing.
Fig. 5 is that the substrate mounting table 17 in the plasma-etching apparatus that relates to second execution mode is the schematic diagram of the major part cross-sectional configuration at center.In execution mode shown in Figure 1, the structure that adopts space part 30 to be connected and can to carry out vacuum exhaust with vacuum pump 72 to the inside of space part 30, in the present embodiment, except vacuum pump 72, also connect the heat-carrying agent supply source 74 that is provided as to the fluid supply appts of any gas of space part 30 supplies.Utilize vacuum exhaust that vacuum pump 72 carries out and supply with these two kinds of operations of heat-carrying agent, can realize by transfer valve 71 and valve 73 from heat-carrying agent supply source 74.So, there be the temperature difference in the central portion zone of substrate mounting table 17 with the periphery zone if for example want, then space part 30 is carried out vacuum exhaust to improve its thermal insulation, if want between the zone of the zone of central portion and periphery, to improve conductivity of heat, then import helium (He), nitrogen (N from heat-carrying agent supply source 74
2), oxygen (O
2), argon gas (Ar), SF
6Heat-carrying agents such as gas.Not only can alleviate the heat-blocking action that space part 30 produces by importing heat-carrying agent, can also between zone of the central portion in the substrate mounting table 17 and periphery zone, produce moving of heat.
In addition, heat-carrying agent temperature control equipments such as cooler (not shown) can be set on the feed path of heat-carrying agent supply source 74 also, make the heat-carrying agent of importing be cooled to the temperature of regulation and its importing.
And, as required, also force (forcing) pump equal pressure conditioning equipment (not shown) can be set on the feed path of heat-carrying agent supply source 74, when importing heat-carrying agent, by regulating conductivity of heat with being set at pressurized state in the space part 30.In this case, by being set, piezometry equipment 75 just can monitor pressure in the space part 30 in the pipe arrangement 30a of space part 30.Because other structure in the plasma-etching apparatus of second execution mode is identical with first execution mode, therefore, omits its explanation.In addition, heat-carrying agent is not limited to gas, also can use liquid.
As mentioned above, in the substrate mounting table 17 of second execution mode, switch to the occupied state of vacuum state and heat-carrying agent by inside with space part 30, so just can be between the central portion of substrate mounting table 17 zone and periphery zone, high accuracy and control temperature as required and neatly.Therefore, for example, if under the different temperatures that is divided into a plurality of steps and in each step, sets wafer W implemented processing such as etching, so, change the conductivity of heat of space part 30 according to the treatment conditions of each step, so just can control the Temperature Distribution of pedestal mounting table 17 rapidly, and under the temperature conditions of the best, implement to handle.
The flow chart of the routine temperature control treatment step when Fig. 6 is to use the plasma-etching apparatus of second execution mode to carry out etch processes in second step.Herein, with following situation is example, in the plasma etch process of first step, make and have the temperature difference at the central portion of substrate mounting table 17 and periphery (zone that promptly is equivalent to the central portion and the periphery of wafer W) and handle, in the plasma etch process of second step, make the central portion of substrate mounting table 17 and periphery keep uniform temperature to handle.
At first, before carrying out etch processes, in step S11, space part 30 is carried out vacuum exhaust.Be exactly specifically to open under the state of valve 71 and make vacuum pump 72 work at shut off valve 73, and by pipe arrangement 30a to reducing pressure in the space part 30.In space part 30, reach specified vacuum degree shut off valve 71 afterwards, space part 30 is remained under the specified vacuum state, as thermal insulation layer.
In step S12, cold-producing mediums temperature is different by pipe arrangement 28a and 28b import in cryogen chamber 28 and 29 respectively.For example, when implementing plasma etch process, under the easy situation about heating of the periphery of wafer W, make the cold-producing medium that imports in cool room 28 and the cool room 29 keep the temperature difference, the cold-producing medium importing that temperature is lower is arranged in the cryogen chamber 29 of substrate mounting table 17 peripheries.As mentioned above, owing to have the effect of thermal insulation layer in the space part 30 of vacuum state, therefore, can suppress heat and in the central portion of substrate mounting table 17 zone and periphery zone, move, so just can be and independently the temperature in these two zones is controlled with good response.
Below, the plasma etch process of enforcement first step in step S13.In the plasma etch process of this first step, because can the temperature control of the periphery of the substrate mounting table corresponding with the periphery of wafer W 17 is lower, therefore, the temperature that not only can suppress the periphery of wafer W rises, but also the interior uniformity of wafer surface can guarantee the uniformity of the Temperature Distribution wafer W surface in and etch processes the time.
In step S14, under the state of shut off valve 71, the electricity that valve 73 is set at regulation is led (conductance), and heat-carrying agent is imported space part 30 from heat-carrying agent supply source 74.At this moment, working pressure sensing equipment 75 is measured the pressure in the space part 30, if reach the pressure of regulation in the space part 30 then shut off valve 73.By in space part 30, importing heat-carrying agent, perhaps can regulate the coefficient of overall heat transmission by changing the pressure in the space part 30.Wherein, also can make force (forcing) pump running not shown in the figures as required, fill heat-carrying agent and in space part 30, become higher high pressure.
Then, in step S15, the cold-producing medium of uniform temp is imported respectively in the cryogen chamber 28,29.In step S14, owing to fill heat-carrying agent in crack portion 30 under the pressure of regulation, therefore, by space part 30, the transfer of heat is carried out smoothly in central portion and these two zones of periphery of substrate mounting table 17.In step S16, implement the plasma etch process of second step.Because the plasma etch process of this second step is to be difficult to produce in the wafer W surface under the condition of Temperature Distribution carry out, therefore, the temperature of substrate mounting table 17 is controlled to be uniform temperature, so just can carry out plasma etch process effectively.
Below with reference to Fig. 7 and Fig. 8, the 3rd execution mode of the present invention is described.Fig. 7 is to be the major part sectional view at center with substrate mounting table 150 in the related plasma-etching apparatus of the 3rd execution mode, and Fig. 8 is the horizontal sectional view along II-II ' line.Wherein, in Fig. 7 and Fig. 8, omit the diagram of air supply pipe 32 for convenience of description.
In the present embodiment, set up dual annular space portion 101,102, simultaneously, each space part 101,102 is cylindric from the bottom of substrate mounting table 150 towards the top and erects, and its top has expansion section 101b, the 102b of horizontal expansion.
As shown in Figure 7, substrate mounting table 150 has from engaging the lamination structure of first base plate 151, second base plate 152, the 3rd base plate 153, the 4th base plate 154 down.Inside at substrate mounting table 150, form second cryogen chamber 132 in first cryogen chamber 131, its outside of annular, its 3rd cryogen chamber 133 in the outside respectively towards the outside from the inboard, between first cryogen chamber 131 and second cryogen chamber 132, set up space part 101, between second cryogen chamber 132 and the 3rd cryogen chamber 133, set up space part 102.On expansion section 101b, the 102b on each space part 101,102 tops, be provided with heater 103 and 104 respectively in separately as temperature control equipment.Heater 103,104 is electrically connected with heater power source 141,142 respectively, thereby can heat the inside of space part 101,102.
And, if use the substrate mounting table 150 of present embodiment, in the case of necessary, from heater power source 141,142 respectively to heater 103 and 104 supply capabilities, like this, not only can the temperature in the space part 101,102 be changed to heating in space part 101 and/or the space part 102.Adopt above-mentioned this structure, for example when the etch processes of implementing along with a plurality of steps of variations in temperature, not only can improve the response of the internal temperature of space part 101 and space part 102, effectively the temperature in the control wafer W surface.Other structure in the plasma-etching apparatus of the 3rd execution mode is identical with first execution mode, therefore omits its relevant explanation.
Wherein, the present invention is not limited to above-mentioned execution mode, and it can be various distortion.For example in the execution mode of Fig. 1, plasma-etching apparatus with the parallel flat formula is an example, but also not limited thereto, can also be applicable to various plasma-etching apparatus such as the magnetic RIE plasma-etching apparatus that uses permanent magnet or inductance coupling high formula plasma-etching apparatus.The present invention is not limited to Etaching device, also the various semiconductor-fabricating devices of temperature control being had relatively high expectations applicable to film formation device etc.
Claims (14)
1. substrate mounting table is characterized in that:
Be that processed substrate is carried out temperature control and puts the substrate mounting table that described processed substrate is used, wherein,
Be provided with many separate streams that adjustment is passed through with medium on described substrate mounting table, simultaneously,
At least between two described streams, be provided with space part,
Described space part is connected with the exhaust equipment that its inside is carried out exhaust and is connected with fluid supply appts to its internal feed fluid, can switch to decompression state in the described space part and import the state that fluid is arranged.
2. substrate mounting table as claimed in claim 1 is characterized in that:
Described space part forms drum.
3. as claim 1 or 2 described substrate mounting tables, it is characterized in that:
Central portion zone at described substrate mounting table is respectively arranged with described stream with the periphery zone of comparing with this central portion outside being arranged in, and carries out heat insulation this two zones of dividing by described space part.
4. as claim 1 or 2 described substrate mounting tables, it is characterized in that:
Cylindrical shape erects described space part towards the top from the bottom of described substrate mounting table, and its top is the shape of horizontal expansion.
5. as claim 1 or 2 described substrate mounting tables, it is characterized in that:
Has the pressure conditioning equipment that the pressure in the described space part is regulated.
6. as claim 1 or 2 described substrate mounting tables, it is characterized in that:
Internal configurations at described space part has temperature control equipment.
7. substrate board treatment is characterized in that:
Have as each described substrate mounting table in the claim 1 to 6.
8. substrate board treatment as claimed in claim 7 is characterized in that:
Be to make action of plasma on processed substrate, implement the plasma processing apparatus of expecting processing.
9. substrate processing method using same is characterized in that:
Be that the processed substrate that puts on the substrate mounting table in substrate board treatment is carried out temperature control, and the substrate processing method using same of expecting processing, wherein,
Be provided with many separate streams that adjustment is passed through with medium on described substrate mounting table, simultaneously, at least between two described streams, be provided with space part, described space part is connected with the exhaust equipment that its inside is carried out exhaust and is connected with fluid supply appts to its internal feed fluid, can will switch to decompression state in the described space part and import the state that fluid is arranged, by adjustment is circulated respectively in the described stream with medium, processed substrate carried out temperature control on one side implement handle on one side.
10. substrate processing method using same as claimed in claim 9 is characterized in that:
Central portion zone at described substrate mounting table is respectively arranged with described stream with the periphery zone of comparing with this central portion outside being arranged in, make it become vacuum state by described space part is carried out vacuum exhaust, thereby make described two zones heat insulation mutually.
11. substrate processing method using same as claimed in claim 9 is characterized in that:
The central portion of described substrate mounting table zone with compare the periphery zone that is arranged in the outside with this central portion and be respectively arranged with described stream, fluid is imported described space part adjusts conductivity of heat between described two zones.
12. substrate processing method using same as claimed in claim 9 is characterized in that:
Central portion zone at described substrate mounting table is respectively arranged with described stream with the periphery zone of comparing with this central portion outside being arranged in, and fluid is imported described space part, and the adjustment pressure inside is adjusted the conductivity of heat between described two zones.
13. a substrate processing method using same is characterized in that, comprising:
To put that processed substrate on the substrate mounting table in substrate board treatment is implemented operation that first step handles and after this first step is handled the operation of second step of enforcement, wherein,
Be provided with many separate streams that adjustment is passed through with medium on described substrate mounting table, and between two described streams, be provided with space part at least, described space part is connected with the exhaust equipment that its inside is carried out exhaust and is connected with fluid supply appts to its internal feed fluid
Adjustment is circulated respectively in the described stream with medium, simultaneously, between the processing of the processing of described first step and described second step, there is the state of fluid to change the conductivity of heat of described space part by described space part being switched to vacuum state with importing, implements to handle while control the temperature of processed substrate.
14. a substrate board treatment is characterized in that, comprising:
The container handling that holds processed substrate;
Put the substrate mounting table of described processed substrate; With
Control in described container handling inside, thereby on processed substrate, implement control part as each described substrate processing method using same in the claim 9 to 13.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2005079515 | 2005-03-18 | ||
| JP2005079515A JP2006261541A (en) | 2005-03-18 | 2005-03-18 | Substrate mounting board, substrate processor and method for processing substrate |
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| CN1835205A CN1835205A (en) | 2006-09-20 |
| CN100382276C true CN100382276C (en) | 2008-04-16 |
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| CN (1) | CN100382276C (en) |
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| CN105552004A (en) * | 2011-01-03 | 2016-05-04 | 瓦里安半导体设备公司 | electrostatic clamp |
| CN105981152A (en) * | 2014-02-12 | 2016-09-28 | 艾克塞利斯科技公司 | Multi fluid cooling system for large temperaure range chuck |
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| US20080137055A1 (en) * | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8262847B2 (en) * | 2006-12-29 | 2012-09-11 | Lam Research Corporation | Plasma-enhanced substrate processing method and apparatus |
| JP4469006B2 (en) * | 2007-09-25 | 2010-05-26 | キヤノンアネルバ株式会社 | Manufacturing method of display substrate |
| JP5032269B2 (en) * | 2007-11-02 | 2012-09-26 | 東京エレクトロン株式会社 | Temperature adjusting apparatus and temperature adjusting method for substrate to be processed, and plasma processing apparatus including the same |
| JP5185054B2 (en) * | 2008-10-10 | 2013-04-17 | 東京エレクトロン株式会社 | Substrate transport method, control program, and storage medium |
| NL2004980A (en) * | 2009-07-13 | 2011-01-17 | Asml Netherlands Bv | Heat transfers assembly, lithographic apparatus and manufacturing method. |
| JP2011077452A (en) * | 2009-10-01 | 2011-04-14 | Tokyo Electron Ltd | Temperature control method and temperature control system for substrate mounting table |
| JP5675138B2 (en) * | 2010-03-25 | 2015-02-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5119297B2 (en) * | 2010-06-30 | 2013-01-16 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP6440298B2 (en) * | 2014-09-04 | 2018-12-19 | 国立大学法人 新潟大学 | Plasma etching equipment |
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| JP6570390B2 (en) * | 2015-09-24 | 2019-09-04 | 東京エレクトロン株式会社 | Temperature control apparatus and substrate processing apparatus |
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| JP7262194B2 (en) * | 2018-09-18 | 2023-04-21 | 東京エレクトロン株式会社 | Mounting table and substrate processing device |
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| JP7254542B2 (en) * | 2019-02-01 | 2023-04-10 | 東京エレクトロン株式会社 | Mounting table and substrate processing device |
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| JP2006261541A (en) | 2006-09-28 |
| CN1835205A (en) | 2006-09-20 |
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