CN201465987U - Plasma treatment device - Google Patents
Plasma treatment device Download PDFInfo
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- CN201465987U CN201465987U CN2009200778135U CN200920077813U CN201465987U CN 201465987 U CN201465987 U CN 201465987U CN 2009200778135 U CN2009200778135 U CN 2009200778135U CN 200920077813 U CN200920077813 U CN 200920077813U CN 201465987 U CN201465987 U CN 201465987U
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Abstract
The utility model provides a novel plasma treatment device, wherein at least one high frequency radio frequency source and at least one low frequency radio frequency source are applied to a lower electrode, and an insulation ring made of insulation materials is arranged on the outer periphery of an upper electrode in an encircling manner. Radio frequency energy of the at least one high frequency radio frequency source can smoothly couple to the insulating ring and reach an earthing conductor cavity above the insulating ring, accordingly plasma density of the edge of a treated substrate can be improved to further realize homogeneity of plasma treatment along the whole substrate surface. Low frequency power is relatively hard to couple to the insulating ring caused by a high resistance of the insulating ring relative to a low frequency current field, thereby earthing area of the at least one low frequency radio frequency source and ion energy are reduced.
Description
[technical field]
The utility model relates to plasma processing apparatus, relates in particular to the equally distributed plasma processing apparatus of a kind of realization plasma concentration.
[background technology]
Plasma treatment appts as the plasma etching machine, has been widely used in the processing of high-precision semiconductor chip.In plasma treatment appts; the parallel-plate-type reaction chamber is extensively used; it comprises the upper/lower electrode that is arranged in parallel; one or more radio frequency power sources are connected on the top electrode or bottom electrode in the reaction chamber through the power match devices, and the bottom electrode top comprises also that usually an electrostatic chuck is connected with DC power supply and utilizes the Coulomb force of generation of static electricity that processed workpiece (as: substrate or wafer) is adsorbed on the electrostatic chuck securely.The plasma etching machine comprises that also a top electrode of being made by conductor material is installed in the reaction chamber top corresponding with bottom electrode, and this top electrode is usually simultaneously as the gas distribution grid of importing reacting gas.After upper/lower electrode is partly or wholly applied radio-frequency (RF) energy, can produce plasma between the upper/lower electrode and come the workpiece substrate is carried out plasma treatment.But the parallel-plate-type reaction chamber can produce uneven plasma density along the whole surface of processed substrate usually.Typically, near the plasma density of the upper area of substrate edge plasma density less than the upper area of substrate center.Therefore, the parallel-plate-type reaction chamber of utilization prior art is when carrying out the plasma treatment substrate, and speed is less than in the processing speed in substrate center can to cause processing (as, etching) at substrate edge, and for whole substrate, the substrate processing speed is inhomogeneous.
Along with machining accuracy is come height more, (critical dimension) is more and more littler for critical dimension, the power supply of dual band radio frequency source is all used in the used plasma reaction chamber of semiconductor integrated circuit processing now mostly, wherein the high-frequency radio frequency source is applied to up and down between two electrodes so that reacting gas ionization, the low frequency radio frequency source is applied to parameters such as the frequency of bottom electrode by regulating the low frequency radio frequency source, power and realizes adjusting to DC-bias bias voltage on the bottom electrode, and then realizes inciding the adjusting of on-chip ion energy.Wherein the frequency in high-frequency radio frequency source selects to make the power of high-frequency radio frequency source output can both be used for ionization reaction gas greatly, and the selection in low frequency radio frequency source makes that the power major part of low-frequency power output is used for quickening to improve ion energy to the ion that ionization is come out.So just can realize independent control, just can satisfy the ion concentrations different under different editing objectives and the needs of ion energy ion concentration and ion energy.As when processing the Low-K material because the Low-K material often is the dielectric layer of porous, so and the very poor ion energy of incident that just requires of the dielectric layer mechanical strength of porous is very low, simultaneously in order to guarantee that etching rate requires enough ion concentrations again.Though the control to the dual band radio frequency source can to a certain degree realize in the prior art, but the ion concentration that can realize and the scope of ion energy still have limitation, and under the prior art framework, in order to realize that the independent control of ion parameter is needed more complicated power matching circuit and control strategy, so just improved manufacturing cost and reduced equipment dependability.For the de control of simpler realization, need improve prior art to the high and low frequency radio frequency source.
[utility model content]
The purpose of this utility model is to provide a kind of plasma processing apparatus, and it not only can strengthen the homogeneity of plasma treatment, and can also realize more accurate ion energy control.
The utility model is realized by following technical method: a kind of plasma processing apparatus comprises: by the ground connection reaction chamber that electric conducting material is made, this reaction chamber comprises a top; The top of reaction chamber is equipped with a top electrode of being made by electric conducting material; In reaction chamber, be provided with a bottom electrode below corresponding with top electrode; Described bottom electrode is connected with the radio-frequency power supply of a first frequency and the radio-frequency power supply of a second frequency, and described first frequency is higher than second frequency; Described top electrode periphery is provided with a dead ring around this top electrode; Wherein the radio-frequency (RF) energy of the radio-frequency power supply of this first frequency can be passed described dead ring and the electric coupling of reaction chamber top, and the radio-frequency (RF) energy of the radio-frequency power supply of described second frequency arrives the impedance of reaction chamber greater than 2 times of the impedances of arriving reaction chamber through top electrode through dead ring.
Wherein this plasma processing unit is used for etching Low-k material; The frequency of first frequency is higher than 20MHZ, as 60MHZ; The frequency of low-frequency power is lower than 20MHZ, as 13MHZ.
Wherein dead ring can cover the part area between top electrode and the reaction chamber side wall portion inboard, and the thickness of dead ring is selected to make low-frequency power to pass dead ring and passed top electrode to 3 times of the impedances of reaction chamber to the impedance of reaction chamber greater than low-frequency power.
Wherein the material of feature dead ring is selected from: quartz, silicon nitride, alundum (Al.
The utility model reduces Dc bias by the contact area that reduces low frequency power, guarantees enough etch rates when making ion energy less.
[description of drawings]
The schematic cross-section of a kind of plasma processing apparatus that Fig. 1 provides for the utility model.
[embodiment]
This usefulness is novel to provide a kind of plasma processing apparatus, it is in plasma treatment procedure, can strengthen the plasma density at the edge of processed substrate, thereby realize, can also realize more accurate ion energy control simultaneously along the homogeneity of the plasma treatment of whole substrate surface.The schematic cross-section of a kind of plasma processing apparatus that Fig. 1 provides for the utility model.Described plasma processing apparatus 10 comprises: by the ground connection reaction chamber 1 that electric conducting material is made, this reaction chamber 1 comprises a top 14; The top 14 of reaction chamber is equipped with the top electrode of being made by electric conducting material 21; In reaction chamber, be provided with a bottom electrode 11 below corresponding with top electrode 21; Described bottom electrode 11 is connected with second radio-frequency power supply 200 that first radio-frequency power supply 100 and with first frequency has second frequency by power match device 30, and described first frequency is higher than second frequency.Device fixture 12 is installed, as electrostatic chuck, in order to fixing substrate to be processed or wafer W on the bottom electrode 11.A dead ring 22 further is set around this top electrode 21 between described top electrode 21 peripheries and the reaction chamber inwall 16; Wherein the radio-frequency (RF) energy of this first radio-frequency power supply 100 can be passed described dead ring 22 and the electric coupling of reaction chamber top, and the radio-frequency (RF) energy of this second radio-frequency power supply 200 arrives the impedance of reaction chamber greater than 2 times of the impedances of arriving reaction chamber through top electrode through dead ring 22.
Described top electrode 21 is made by electric conducting material, can be to be made by conductor material or semi-conducting material, as carborundum, agraphitic carbon, silicon, aluminium etc.This top electrode 21 is provided with a plurality of gas injection holes, thereby the reacting gas that top electrode 21 is also sent into the outside as the gas spray head simultaneously is distributed to whole processed wafer W upper surface equably.
In plasma processing apparatus framework shown in Figure 1, bottom electrode 11 is connected with at least two radio frequency power sources 100 and 200 simultaneously, and wherein first frequency is a high frequency, and frequency is usually greater than 20MHZ, such as, 27MHZ, 60MHZ, 100MHZ or higher; Second frequency is a low frequency, and frequency is usually less than 20MHZ, such as, 400KHZ, 2MHZ, 13.56MHZ.In plasma treatment procedure, the zone that plasma is known from experience between upper/lower electrode forms plasma by capacitive coupling.
The utility model further is provided with a dead ring 22 around this top electrode 21 in top electrode 21 peripheries, can change the plasma density of dead ring 22 lower zones effectively and allow more accurate ion energy control. as shown in Figure 1, when the radio-frequency (RF) energy of first radio-frequency power supply 100 and second radio-frequency power supply 200 is imported in the reaction chambers by bottom electrode 11, two radio-frequency (RF) energy have common from bottom electrode to top electrode again to the first radio-frequency path P1. of the reaction chamber 1 of ground connection because the existence of dead ring 22, the radio-frequency (RF) energy of first radio-frequency power supply 100 also can be by capacity coupled mode by dead ring 22, thereby form one second radio-frequency path P2. thus, for first radio-frequency power supply 100, the radio-frequency (RF) energy of high-frequency first radio-frequency power supply 100 not only is coupled to top electrode 21 from bottom electrode 11, and can be coupled to the dead ring 22 at top electrode 21 edges, RF-coupled path is enlarged significantly, (dotted line 40 peripheries are to the zone between the reaction chamber madial wall 16 as shown in the figure) produces the higher plasma of plasma density and makes plasma form regional along continuous straight runs extended in the zone of radio-frequency path permission below dead ring 22 and above the electrostatic chuck 12 of this expansion. because the distribution of plasma density is big more the closer to the plasma density of upper/lower electrode central area, plasma density away from the upper/lower electrode central area is more little more. because dead ring 22 is arranged on the periphery of top electrode 21, plasma also can produce below dead ring 22 like this, for processed substrate W, plasma density above substrate W edge more approaches the plasma density of upper/lower electrode central area, therefore, after dead ring 22 is set, the plasma density of top, the edge of substrate W is more near the plasma density of upper/lower electrode central area, for whole substrate, the plasma density of whole substrate W top is approaching basically, plasma distribution is even basically, when plasma treatment, compared with prior art, plasma processing apparatus of the present utility model can be realized more uniform plasma treatment.
And for the radio-frequency (RF) energy of second radio-frequency power supply 200, low-frequency radio-frequency (RF) energy is difficult to by this dead ring 22, and this will reduce the contact area of low frequency energy effectively.For low-frequency radio-frequency (RF) energy, this less contact area can reduce ion energy effectively.Have in the application of soft material of low-k (Low-K) in many processing, need low bias voltage.By structural arrangements of the present utility model, can realize low ion energy, and then allow more accurate ion energy control that its operation principle is explained as follows.
In order to realize that the utility model reduces the purpose of ion energy, will reduce the DC-bias (DC-bias is a negative potential) on the bottom electrode 11.Because wafer W go up the negative potential of accumulation in can accelerate plasma ion and bombard wafer W surface.Influence the also relevant except the power of RF power supply and frequency of DC-bias with the area of upper/lower electrode:
Vdc∝(S1/S2)
n......(1)
Wherein S1 is the contact area (grounding area) of top electrode 21 (anode), and S2 is the area of bottom electrode 11 (negative electrode), and n is and the relevant parameter of plasma reaction cavity shape structure.
The utility model makes low frequency radio frequency source 200 (less than 20MHZ at the dead ring 22 of top electrode 21 arranged outside, one insulating material (as quartz), as 13MHZ, 2MHZ) can't pass the ground connection cavity that this dead ring arrives the dead ring back, high-frequency radio frequency source 100 (greater than 20MHZ, as 30MHZ, 60MHZ) can pass top electrode and dead ring again with 1 electric coupling of conductor chamber.The impedance when passing dead ring 22 of the electric field in low frequency radio frequency source 100 is very big, and the area in the relative low frequency radio frequency of top electrode contact area source 100 is just reduced like this, according to above-mentioned formula (1), and Vdc and also corresponding the reducing of inciding on the wafer W of ion energy.Impedance was very little when this dead ring 22 passed in high-frequency radio frequency source 100 simultaneously, so plasma concentration and homogeneity are maintained.Keep ion concentration and homogeneity when making the utility model reaction chamber that littler ion energy can be realized by adding a dead ring 22.Low frequency radio frequency source 100 will be much larger than the impedance Rb that is electrically coupled to the earthing conductor chamber by top electrode, wherein Ra＞2Rb or Ra＞3Rb even Ra＞4Rb by the impedance Ra of dead ring 22.
The utility model scope is not limited to the disclosed structure of the foregoing description, as according to the utility model principle, dead ring can only cover the conductor reaction chamber of a part of ground connection also can realize the utility model purpose, and the thickness of dead ring 22 also can be regulated according to the actual needs.
Structure applications of the present utility model is particularly effective especially when etching has the materials such as Low-K of strict demand to ion energy in plasma etching, and the utility model has been realized the efficient control of ion energy and ion concentration under the situation that does not need control circuits such as extra filter circuit.
Claims (6)
1. plasma processing apparatus comprises:
By the ground connection reaction chamber that electric conducting material is made, this reaction chamber comprises a top;
The top of reaction chamber is equipped with a top electrode of being made by electric conducting material;
In reaction chamber, be provided with a bottom electrode below corresponding with top electrode;
Described bottom electrode is connected with the radio-frequency power supply of a first frequency and the radio-frequency power supply of a second frequency, and described first frequency is higher than second frequency;
Described top electrode periphery is provided with a dead ring around this top electrode;
Wherein the radio-frequency (RF) energy of the radio-frequency power supply of this first frequency can be passed described dead ring and the electric coupling of reaction chamber top, and the radio-frequency (RF) energy of the radio-frequency power supply of described second frequency arrives the impedance of reaction chamber greater than 2 times of the impedances of arriving reaction chamber through top electrode through dead ring.
2. plasma processing apparatus according to claim 1 is characterized in that: this plasma processing unit is used for etching Low-k material.
3. plasma processing apparatus according to claim 1 is characterized in that: described first frequency is higher than 20MHZ, and described second rate is lower than 20MHZ.
4. plasma processing apparatus according to claim 3 is characterized in that: described first frequency is 60MHZ, and described second frequency is 13MHZ.
5. plasma processing apparatus according to claim 1, it is characterized in that: dead ring covers the part area between top electrode and the reaction chamber side wall portion inboard, and the thickness selection of dead ring makes the radio-frequency power supply of second frequency pass dead ring and passes top electrode to 3 times of the impedances of reaction chamber to the impedance of reaction chamber greater than the radio-frequency power supply of second frequency.
6. plasma processing apparatus according to claim 1, the material of its feature dead ring is selected from: quartz, silicon nitride, alundum (Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200778135U CN201465987U (en) | 2009-07-03 | 2009-07-03 | Plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200778135U CN201465987U (en) | 2009-07-03 | 2009-07-03 | Plasma treatment device |
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| CN201465987U true CN201465987U (en) | 2010-05-12 |
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| CN2009200778135U Expired - Lifetime CN201465987U (en) | 2009-07-03 | 2009-07-03 | Plasma treatment device |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102387655A (en) * | 2010-09-06 | 2012-03-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lower electrode for plasma equipment and plasma equipment |
| CN104782233A (en) * | 2012-08-28 | 2015-07-15 | 先进能源工业公司 | A method of controlling the switched mode ion energy distribution system |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| CN107426908A (en) * | 2017-07-13 | 2017-12-01 | 大连理工大学 | A kind of low pressure large area, high-density plasma generation device and production method |
| CN108322991A (en) * | 2018-01-08 | 2018-07-24 | 青海师范大学 | A kind of semiclosed normal pressure double frequency large area glow discharge experimental provision |
| US10607813B2 (en) | 2017-11-17 | 2020-03-31 | Advanced Energy Industries, Inc. | Synchronized pulsing of plasma processing source and substrate bias |
| CN111092008A (en) * | 2018-10-24 | 2020-05-01 | 江苏鲁汶仪器有限公司 | Inductively coupled plasma etching equipment and etching method |
| US10707055B2 (en) | 2017-11-17 | 2020-07-07 | Advanced Energy Industries, Inc. | Spatial and temporal control of ion bias voltage for plasma processing |
| US10811229B2 (en) | 2017-11-17 | 2020-10-20 | Advanced Energy Industries, Inc. | Synchronization with a bias supply in a plasma processing system |
| US11189454B2 (en) | 2012-08-28 | 2021-11-30 | Aes Global Holdings, Pte. Ltd. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| TWI767618B (en) * | 2020-04-02 | 2022-06-11 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma reactor and method for adjusting radio frequency power distribution |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11887812B2 (en) | 2019-07-12 | 2024-01-30 | Advanced Energy Industries, Inc. | Bias supply with a single controlled switch |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
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2009
- 2009-07-03 CN CN2009200778135U patent/CN201465987U/en not_active Expired - Lifetime
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US11011349B2 (en) | 2009-05-01 | 2021-05-18 | Aes Global Holdings, Pte. Ltd. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| CN102387655A (en) * | 2010-09-06 | 2012-03-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lower electrode for plasma equipment and plasma equipment |
| CN102387655B (en) * | 2010-09-06 | 2015-10-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | For bottom electrode and the plasma apparatus of plasma apparatus |
| CN104782233A (en) * | 2012-08-28 | 2015-07-15 | 先进能源工业公司 | A method of controlling the switched mode ion energy distribution system |
| CN104782233B (en) * | 2012-08-28 | 2018-12-25 | 先进能源工业公司 | The method of control switch mode ion energy distribution system |
| US11189454B2 (en) | 2012-08-28 | 2021-11-30 | Aes Global Holdings, Pte. Ltd. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| CN107426908A (en) * | 2017-07-13 | 2017-12-01 | 大连理工大学 | A kind of low pressure large area, high-density plasma generation device and production method |
| US10811228B2 (en) | 2017-11-17 | 2020-10-20 | Advanced Energy Industries, Inc. | Control of plasma processing systems that include plasma modulating supplies |
| US11842884B2 (en) | 2017-11-17 | 2023-12-12 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| US10811227B2 (en) | 2017-11-17 | 2020-10-20 | Advanced Energy Industries, Inc. | Application of modulating supplies in a plasma processing system |
| US10707055B2 (en) | 2017-11-17 | 2020-07-07 | Advanced Energy Industries, Inc. | Spatial and temporal control of ion bias voltage for plasma processing |
| US10896807B2 (en) | 2017-11-17 | 2021-01-19 | Advanced Energy Industries, Inc. | Synchronization between an excitation source and a substrate bias supply |
| US10811229B2 (en) | 2017-11-17 | 2020-10-20 | Advanced Energy Industries, Inc. | Synchronization with a bias supply in a plasma processing system |
| US10607813B2 (en) | 2017-11-17 | 2020-03-31 | Advanced Energy Industries, Inc. | Synchronized pulsing of plasma processing source and substrate bias |
| CN108322991A (en) * | 2018-01-08 | 2018-07-24 | 青海师范大学 | A kind of semiclosed normal pressure double frequency large area glow discharge experimental provision |
| CN111092008A (en) * | 2018-10-24 | 2020-05-01 | 江苏鲁汶仪器有限公司 | Inductively coupled plasma etching equipment and etching method |
| US11887812B2 (en) | 2019-07-12 | 2024-01-30 | Advanced Energy Industries, Inc. | Bias supply with a single controlled switch |
| TWI767618B (en) * | 2020-04-02 | 2022-06-11 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma reactor and method for adjusting radio frequency power distribution |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Plasma processing apparatus Effective date of registration: 20110725 Granted publication date: 20100512 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20100512 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100512 |