CN102387655B - For bottom electrode and the plasma apparatus of plasma apparatus - Google Patents
For bottom electrode and the plasma apparatus of plasma apparatus Download PDFInfo
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- CN102387655B CN102387655B CN201010274284.5A CN201010274284A CN102387655B CN 102387655 B CN102387655 B CN 102387655B CN 201010274284 A CN201010274284 A CN 201010274284A CN 102387655 B CN102387655 B CN 102387655B
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Abstract
The invention provides a kind of bottom electrode for plasma apparatus and plasma apparatus, comprise pedestal and insulating barrier, described insulating barrier is arranged on the end face of described pedestal, described insulating barrier equivalent capacity in the thickness direction thereof has following distribution trend: namely, along the radial direction of described insulating barrier, the equivalent capacity of described insulating barrier differs in size, to regulate the distribution at the described in the radial direction energy of plasma of described insulating barrier, thus make the ion energy on the workpiece to be machined surface be placed on insulating barrier meet technological requirement along the distribution of the radial direction of described insulating barrier.Therefore, the bottom electrode for plasma apparatus provided by the invention and plasma apparatus can improve the processing characteristics of plasma apparatus.
Description
Technical field
The present invention relates to a kind of bottom electrode for plasma apparatus and plasma apparatus.
Background technology
Along with the progress of plasma technique, plasma technique expands to field of solar energy from traditional semiconductor and micromechanics field, and develop to other field gradually, this makes the competition between plasma apparatus develop enterprise, thus impelling equipment development enterprise constantly to innovate, plasma equipment carries out transforming or improving.
Through development for many years, person skilled has developed polytype plasma apparatus, as capacitance coupling plasma (CCP) equipment, inductively coupled plasma (ICP) equipment and Ecr plasma (ECR) equipment, these plasma apparatus are applied to the manufacturing of integrated circuit (IC), microelectromechanical systems (MEMS), light-emitting diode (LED) and solar cell.
Referring to Fig. 1, is a kind of structure diagram of plasma apparatus.This device comprises reaction chamber 4, bottom electrode 1, inductance-coupled coil 3, adaptation 6,7 and power supply 5,8.The top of reaction chamber 4 and bottom arrange medium window 9 and lower medium window 10 respectively.Bottom electrode 1 is located at the inside of reaction chamber 4 and near lower medium window 10 position, bottom electrode 1 is connected with power supply 8 by adaptation 7.Inductance-coupled coil 3 is located at the top of medium window 9, and is connected with power supply 5 by adaptation 6.Process gas ionization in reaction chamber 4 is formed plasma by inductance-coupled coil 3, and action of plasma is in the surface of workpiece to be machined 2.Workpiece to be machined 2 (as wafer) is placed on the top of bottom electrode 1, and is supported by bottom electrode 1.
Referring to Fig. 2, is a kind of sectional view of bottom electrode.This bottom electrode comprises pedestal 11, insulating barrier 12 and electrostatic attraction electrode 13, and insulating barrier 12 is arranged on the top of pedestal 11, and electrostatic attraction electrode 13 is wrapped up by insulating barrier 12, and is connected with DC power supply, and pedestal 11 is connected with radio-frequency power supply.After electrostatic attraction electrode 13 and DC power supply are connected, can produce Coulomb force between electrostatic attraction electrode 13 and workpiece to be machined 2, workpiece to be machined 2 is fixed on the surface of bottom electrode 1 by Coulomb force.
The operation principle of above-mentioned plasma apparatus is as follows: the process gas of reaction chamber 4 ionizes and forms plasma by inductance-coupled coil 3, and the action of plasma of generation is in workpiece to be machined 2 surface.When the power supply 8 connecting pedestal 11 is radio-frequency power supply, the surface of workpiece to be machined 2 can form sheath of RF plasma, under the effect of sheath of RF plasma, workpiece to be machined 2 surface produces direct current and bears automatic bias (hereinafter referred to as back bias voltage), and this back bias voltage forms radio frequency plasma arc voltage with the potential difference being positioned at the plasma above workpiece to be machined 2 and falls.When the size of workpiece to be machined 2 and machining accuracy (uniformity as conductor width) less time, the ion energy characteristic of the surperficial zones of different of workpiece to be machined 2 and the difference of distribution situation less, substantially can meet requirement on machining accuracy.
But along with the competition in market and the progress of technology, the size of workpiece to be machined 2 constantly increases, and integrated level is also more and more higher.When the diameter of workpiece to be machined 2 more than 300mm, requirement on machining accuracy at below 65nm time, due to the impact of the air-flow on workpiece to be machined 2 surface, temperature and plasma self-characteristic, make the ion energy characteristic on workpiece to be machined 2 surface and distribution situation not to meet technological requirement, and then cause the processing technology of plasma apparatus to meet design requirement.In addition, in the machining process of plasma apparatus, load (loading) effect can be there is between the centerand edge of workpiece to be machined 2, make the ion energy characteristic on workpiece to be machined 2 surface and distribution situation not to meet technological requirement, and then cause the processing technology of plasma apparatus to meet design requirement.
Summary of the invention
The technical problem to be solved in the present invention is exactly the above-mentioned defect existed for plasma apparatus, a kind of bottom electrode for plasma apparatus is provided, it can fall the radio frequency plasma arc voltage on workpiece to be machined surface and adjust, the ion energy characteristic on workpiece to be machined surface and distribution situation is made to reach technological requirement, to meet large scale, high-precision processing request.
The technical scheme adopted solved the problems of the technologies described above is to provide a kind of bottom electrode for plasma apparatus, comprise pedestal and insulating barrier, described insulating barrier is arranged on the end face of described pedestal, described insulating barrier equivalent capacity in the thickness direction thereof has following distribution trend: namely, along the radial direction of described insulating barrier, the equivalent capacity of described insulating barrier differs in size, to regulate the distribution at the described in the radial direction energy of plasma of described insulating barrier, thus make the ion energy on the workpiece to be machined surface be placed on insulating barrier meet technological requirement along the distribution of the radial direction of described insulating barrier.
Wherein, described insulating barrier is one-body molded by same media material, and different at the thickness in the radial direction of described insulating barrier; Or described insulating barrier is one-body molded by the dielectric material that dielectric constant is different, and described insulating barrier thickness is identical or different in the radial direction thereof.
Wherein, described insulating barrier is combined by the insulating element that multiple equivalent capacity is different.
Wherein, described multiple insulating element is fixed insulation parts.
Wherein, described multiple insulating element comprises at least one fixed insulation parts and at least one adjustable insulating element.
Wherein, described fixed insulation parts are made up of same media material or are made up of the dielectric material that dielectric constant is different.
Wherein, described adjustable insulating element comprises fixed bed and lifting layer, and described lifting layer is positioned at the below of described fixed bed and is connected with elevating mechanism, described lifting layer by elevating mechanism away from or close described fixed bed.
Wherein, when described insulating barrier adopts multiple described adjustable insulating element, the lifting layer of described multiple adjustable insulating element is driven by same described elevating mechanism or is driven by each self-corresponding elevating mechanism respectively.
Wherein, described fixed bed is made up of dielectric material, and described lifting layer is made up of electric conducting material or dielectric material, or the material that described lifting layer is mixed by electric conducting material and dielectric material is made.
The present invention also provides a kind of plasma apparatus, comprise processing chamber and be arranged on the bottom electrode in described processing chamber, described bottom electrode adopts described bottom electrode provided by the invention, meets technological requirement to make the ion energy on the workpiece to be machined surface be placed on insulating barrier along the distribution of the radial direction of described insulating barrier.
The present invention has following beneficial effect:
Bottom electrode for plasma apparatus provided by the invention, makes the zones of different of described insulating barrier place plane have different equivalent capacitys at its thickness direction.The back bias voltage on workpiece to be machined surface, corresponding region is regulated by the equivalent capacity changing insulating barrier zones of different, thus the radio frequency plasma arc voltage changing workpiece to be machined surface falls, the defect of technological requirement cannot be met with the ion energy characteristic and distribution situation of eliminating the workpiece to be machined surface caused because of the energy of plasma difference on workpiece to be machined surface, and then make workpiece to be machined obtain desirable process results.Therefore, bottom electrode for plasma apparatus provided by the invention can change ion energy characteristic and the distribution situation on workpiece to be machined surface, enables the processing technology of plasma apparatus reach large scale, high-precision technological requirement obtain desirable process results.Similarly, plasma apparatus provided by the invention have employed above-mentioned bottom electrode, the radio frequency plasma arc voltage on workpiece to be machined surface is fallen and regulates, make the energy of plasma characteristic on workpiece to be machined surface and distribution situation reach technological requirement, thus enable the processing technology of plasma apparatus reach large scale, high-precision technological requirement obtain desirable process results.
Accompanying drawing explanation
Fig. 1 is the structure diagram of inductively coupled plasma equipment;
Fig. 2 is the sectional view of the bottom electrode with electrostatic chuck;
Fig. 3 is the sectional view of bottom electrode in the first embodiment;
Fig. 4 is the sectional view of bottom electrode in the second embodiment; And
Fig. 5 is the sectional view of the 3rd embodiment bottom electrode.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the bottom electrode for plasma apparatus provided by the invention and plasma apparatus are described in detail.
The machining accuracy of plasma apparatus is determined by the ion energy characteristic on workpiece to be machined surface and distribution situation, and ion energy characteristic and distribution situation depend on that the radio frequency plasma arc voltage on workpiece to be machined surface falls.The potential difference referred between the current potential of workpiece to be machined and the plasma above workpiece to be machined falls in the radio frequency plasma arc voltage on workpiece to be machined surface.Therefore, the plasma characteristics and distribution situation that not only depend on workpiece to be machined surface fall in the radio frequency plasma arc voltage on workpiece to be machined surface, also depend on the automatic bias on workpiece to be machined surface.The present invention is exactly that the radio frequency plasma arc voltage changing workpiece to be machined surface by changing the automatic bias on workpiece to be machined surface falls, and then changes ion energy characteristic and the distribution situation on workpiece to be machined surface.The mechanism of production of the automatic bias on workpiece to be machined surface is as follows: when bottom electrode is connected with radio-frequency power supply, and the surface of workpiece to be machined can form sheath of RF plasma, in the half period that radio-frequency voltage is negative, and the surface of Ions Bombardment workpiece to be machined; In the half period that radio-frequency voltage is positive, the surface of electronics bombardment workpiece to be machined.The heavier mass of ion because electron mass is comparatively light, electronics more easily near the surface of workpiece to be machined, and at the surface aggregation of workpiece to be machined, realizes electric neutrality to suppress electron stream, the current potential of workpiece to be machined to the drift of negative value direction, thus forms automatic bias.Can learn thus, the automatic bias on workpiece to be machined surface is by the insulating barrier of bottom electrode and the impact of bottom electrode surrounding structure (as ceramic washer etc.).
After deliberation, insulating barrier is larger in the equivalent capacity of its thickness direction, the voltage drop of insulating barrier is less, the absolute value (size of the back bias voltage of following indication all refers to the absolute value of back bias voltage) being placed on the back bias voltage on the workpiece to be machined surface on insulating barrier top is larger, and the radio frequency plasma arc voltage on workpiece to be machined surface falls larger.Otherwise the radio frequency plasma arc voltage on workpiece to be machined surface falls less.Therefore, the present invention regulates the automatic bias on workpiece to be machined surface by the equivalent capacity changing insulating barrier, thus makes the ion energy characteristic on workpiece to be machined surface and distribution situation meet technological requirement.
The present invention is used for the bottom electrode of plasma apparatus, comprise pedestal and insulating barrier, insulating barrier is arranged on the end face of pedestal, insulating barrier equivalent capacity in the thickness direction thereof has following distribution trend: namely, along the radial direction of insulating barrier, the equivalent capacity of insulating barrier differs in size, and to regulate the difference of the energy of plasma in the radial direction at insulating barrier, meets technological requirement to make the ion energy on the workpiece to be machined surface be placed on insulating barrier along the distribution of the radial direction of insulating barrier.Here the end face of the pedestal of indication refers to the side of pedestal towards workpiece to be machined.
Adjustable insulating element of the present invention comprises fixed bed and lifting layer, and fixed bed is fixed on the end face of pedestal, and the upper plane of the upper plane of fixed bed and insulating barrier is in same level.Lifting layer is positioned at the below of fixed bed and is connected with elevating mechanism, lifting layer by elevating mechanism can away from or close fixed bed, change the equivalent capacity of adjustable insulating element with this.
In the present invention, the radial direction of insulating barrier refers to the direction perpendicular with thickness of insulating layer direction.After fixed insulation parts refer to that insulating element completes, namely its equivalent capacity is determined.After adjustable insulating element refers to that insulating element completes, its equivalent capacity can regulate.
In order to more clearly introduce technical scheme of the present invention, following examples eliminate electrostatic attraction electrode, only retain pedestal and insulating barrier.In addition, because the ion energy characteristic and distribution situation that are placed on the ion energy characteristic on the workpiece to be machined surface of surface of insulating layer and distribution situation and the surface of insulating layer of bottom electrode are equal, therefore, following examples are only described for the ion energy characteristic of surface of insulating layer and distribution situation.
Embodiment 1
Referring to Fig. 3, is the sectional view of the first embodiment bottom electrode.Bottom electrode comprises pedestal 31 and is fixed on the insulating barrier 32 of pedestal 31 end face.Pedestal 31 is made up of aluminium or other electric conducting material.Insulating barrier 32 is an integral structure component, and particularly, insulating barrier 32 is divided into inner region 321 and outskirt 322, and the thickness of inner region 321 is d1, and the thickness of outskirt 322 is d2.Inner region 321 and outskirt 322 adopt identical dielectric material (as pottery) to make, and d1 < d2.Therefore, the equivalent capacity of inner region 321 is greater than the equivalent capacity of outskirt 322.When pedestal 31 is communicated with radio-frequency power supply, the automatic bias of inner region 321 will be greater than the automatic bias of outskirt 322, thus makes the radio frequency plasma arc voltage of inner region 321 fall the radio frequency plasma arc voltage being greater than outskirt 322 to fall.Embodiment 1 is the automatic bias being adjusted inner region 321 and outskirt 322 by the thickness of inner region 321 and outskirt 322, thus regulate the radio frequency plasma arc voltage of inner region 321 and outskirt 322 to fall, and then the ion energy characteristic of inner region 321 and outskirt 322 and distribution is made to reach technological requirement.Being understood that, according to different technological requirements, also can be d1 > d2, and now, the automatic bias of inner region 321 will be less than the automatic bias of outskirt 322, thus makes the radio frequency plasma arc voltage of inner region 321 fall the radio frequency plasma arc voltage being less than outskirt 322 to fall.
As a modification of embodiment 1, the inner region 321 of insulating barrier 32 and outskirt 322 also can be two independently insulating elements, when bottom electrode is installed, first two insulating elements are fixed, then two insulating elements are fixed on pedestal 31, or directly two insulating element splicings are fixed on pedestal 31.
Embodiment 2
Referring to Fig. 4, is the sectional view of the second embodiment bottom electrode.Bottom electrode comprises pedestal 41 and is fixed on the insulating barrier 42 of pedestal 41 end face.Pedestal 41 is made up of aluminium or other electric conducting material.Insulating barrier 42 is an integral structure component, and particularly, insulating barrier 42 is divided into inner region 421 and outskirt 422, and the thickness of inner region 421 is d3, and the thickness of outskirt 422 is d4.Inner region 421 and outskirt 422 adopt the dielectric material of differing dielectric constant to make, and d3=d4.When the dielectric constant of inner region 421 is greater than the dielectric constant of outskirt 422, the equivalent capacity of inner region 421 is greater than the equivalent capacity of outskirt 422, and therefore, the automatic bias of inner region 421 is greater than the automatic bias of outskirt 422.When pedestal 41 is communicated with radio-frequency power supply, the automatic bias of inner region 421 will be less than the automatic bias of outskirt 422, thus makes the radio frequency plasma arc voltage of inner region 421 fall the radio frequency plasma arc voltage being less than outskirt 422 to fall.Embodiment 2 is the automatic bias being adjusted inner region 421 and outskirt 422 by adjustment inner region 421 and the dielectric constant of outskirt 422, thus regulate the radio frequency plasma arc voltage of inner region 421 and outskirt 422 to fall, and then the ion energy characteristic of inner region 421 and outskirt 422 and distribution situation is made to reach technological requirement.Be understood that, according to different process requirement, can d3<d4 or d3>d4 be made.
As a modification of embodiment 2, the inner region 421 of insulating barrier 42 and outskirt 422 also can be two independently insulating elements, when bottom electrode is installed, first two insulating elements are fixed, then two insulating elements are fixed on pedestal 41, or directly two insulating element splicings are fixed on pedestal 41.
Embodiment 3
Referring to Fig. 5, is the sectional view of the 3rd embodiment bottom electrode.Bottom electrode comprises pedestal 51, is arranged on insulating barrier 52 and the elevating mechanism 53 of pedestal 51 end face.Pedestal 51 is made up of aluminium or other electric conducting material, and the inside of pedestal 51 is provided with the through hole 54 running through pedestal 51, and the carriage release lever 531 of elevating mechanism 53 can move up and down in through hole 54.Insulating barrier 52 is made up of fixed insulation parts and adjustable insulating element.Particularly, insulating barrier 52 is divided into inner region 521 and outskirt 522, and wherein, the thickness of outskirt 522 is d6, is fixed on the end face of pedestal 51.Inner region 521 is adjustable insulating element, and adjustable insulating element comprises fixed bed 503 and lifting layer 505.Fixed bed 503 is fixed on outskirt 522, and the upper surface of its upper surface and outskirt 522 is in same level.Lifting layer 505 can adopt the electric conducting materials such as metallic aluminium or Al
2o
3make Deng dielectric material.Lifting layer 505 is connected with one end of the carriage release lever 531 of elevating mechanism 53, and the other end of carriage release lever 531 is connected with the drive unit 532 of elevating mechanism 53, and under the driving of drive unit 532, carriage release lever 531 drives lifting layer 505 to move up and down.Form hollow layer 504 between fixed bed 503 and lifting layer 505, when lifting layer 505 is under the driving of elevating mechanism 53, during away from fixed bed 503, the thickness d 5 of hollow layer 504 increases, and the equivalent capacity of inner region 521 increases; When being elevated layer 505 near fixed bed 503, the thickness d 5 of hollow layer 504 reduces, and the equivalent capacity of inner region 521 reduces.Therefore, embodiment 3 is by being elevated the movement of layer 505 to change the automatic bias of inner region 521, to regulate the radio frequency plasma arc voltage of inner region 521 to fall, and then making the ion energy characteristic of inner region 521 and outskirt 522 and distribution situation reach technological requirement.
The drive unit 532 of elevating mechanism 53 can be cylinder or motor, and accordingly, the carriage release lever 531 of elevating mechanism 53 can be polished rod or screw rod.When drive unit 532 is motor, motor also can connect radio-frequency power supply.Actuating force is delivered to polished rod or screw rod by transmission device (not shown) by cylinder or motor, and transmission device can adopt and any market can realize cylinder and polished rod or the transmission device of transferring power between motor and screw rod.
Bottom electrode in embodiment 3, relative to the bottom electrode in embodiment 1,2, can increase the flexibility of bottom electrode.Particularly, after bottom electrode in embodiment 1,2 is arranged on plasma apparatus, the automatic bias impact of insulating barrier on its surface of bottom electrode is determined, if technique changes, the bottom electrode that can only more renew is to adapt to the requirement of new technology, therefore, need the bottom electrode of a greater number to adapt to different technique.But the bottom electrode in embodiment 3 only needs to regulate the position of lifting layer 505 can regulate the automatic bias of surface of insulating layer, makes the ion energy characteristic of surface of insulating layer and distribution situation reach technological requirement.Therefore, the bottom electrode in embodiment 3 not only can reduce the quantity of bottom electrode, reduces the manufacturing cost of equipment, and can reduce the time changing bottom electrode, improves the operational efficiency of plasma apparatus.
As a modification of embodiment 3, also the structure of inner region, outskirt in embodiment 3 can be exchanged, namely, the inner region of insulating barrier is adopted fixed insulation parts, the outskirt of insulating barrier adopts and is similar to adjustable insulating element in embodiment 3, regulate the radio frequency plasma arc voltage of outskirt to fall by elevating mechanism 53, ion energy characteristic and the distribution situation of adjustment inner region 521 and outskirt 522 can be reached equally.
It should be noted that, the size of the energy of plasma on workpiece to be machined surface of the present invention is after technical process terminates, and is obtained by the result measuring workpiece to be machined surface.Particularly, for etch process, the more region of workpiece to be machined surface etching shows that energy of plasma is comparatively large, needs the automatic bias improving this region to fall to obtain larger radio frequency plasma arc voltage.Otherwise, need the automatic bias reducing this region.For deposit film, the region that workpiece to be machined surface film is thicker, shows that energy of plasma is comparatively large, needs the automatic bias improving this region to fall to obtain larger radio frequency plasma arc voltage, namely reduce the equivalent capacity of the insulating barrier corresponding with this region.Otherwise, need the automatic bias reducing this region.
Be understood that, according to workpiece to be machined result, insulating barrier can be divided into more multizone, as inner region, middle district and outskirt, the area of zones of different can do corresponding adjustment according to processing particularly.The insulating barrier of zones of different can adopt the combination of fixed insulation parts or adjustable insulating element or fixed insulation parts and adjustable insulating element respectively, regulate the back bias voltage of corresponding region, thus regulate the radio frequency plasma arc voltage on surface, corresponding region to fall, and then the ion energy characteristic on work piece surface and distribution situation is made to reach technological requirement.In addition, when insulating barrier comprises multiple adjustable insulating element, the lifting layer of multiple adjustable insulating element can be driven by an elevating mechanism, also can be driven by each self-corresponding elevating mechanism.
Also it should be noted that, bottom electrode provided by the invention can be applied in capacitance coupling plasma equipment, inductively coupled plasma equipment, Ecr plasma equipment and DC discharge plasma equipment, to support, fixes workpiece to be machined.
The present invention also provides a kind of plasma apparatus, comprise processing chamber and be arranged on the bottom electrode in described processing chamber, described bottom electrode adopts the bottom electrode of embodiment 1,2,3 or its modification, for regulating the plasma sheath voltage drop on the workpiece to be machined surface be placed on described bottom electrode, the ion energy characteristic on workpiece to be machined surface and distribution situation is made to reach technological requirement.This plasma apparatus may be used for plasma etching or thin film deposition processes.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. the bottom electrode for plasma apparatus, comprise pedestal and insulating barrier, described insulating barrier is arranged on the end face of described pedestal, it is characterized in that, described insulating barrier equivalent capacity in the thickness direction thereof has following distribution trend: namely, along the radial direction of described insulating barrier, the equivalent capacity of described insulating barrier differs in size, to regulate the distribution at the described in the radial direction energy of plasma of described insulating barrier, thus the ion energy making arrival be placed in the workpiece to be machined surface on insulating barrier meets technological requirement along the distribution of the radial direction of described insulating barrier.
2. bottom electrode according to claim 1, is characterized in that, described insulating barrier is one-body molded by same media material, and different at the thickness in the radial direction of described insulating barrier; Or described insulating barrier is one-body molded by the dielectric material that dielectric constant is different, and described insulating barrier thickness is identical or different in the radial direction thereof.
3. bottom electrode according to claim 1, is characterized in that, described insulating barrier is combined by the insulating element that multiple equivalent capacity is different.
4. bottom electrode according to claim 3, is characterized in that, described multiple insulating element is fixed insulation parts.
5. bottom electrode according to claim 3, is characterized in that, described multiple insulating element comprises at least one fixed insulation parts and at least one adjustable insulating element.
6. the bottom electrode according to claim 4 or 5, is characterized in that, described fixed insulation parts are made up of same media material or are made up of the dielectric material that dielectric constant is different.
7. bottom electrode according to claim 5, it is characterized in that, described adjustable insulating element comprises fixed bed and lifting layer, and described lifting layer is positioned at the below of described fixed bed and is connected with elevating mechanism, described lifting layer by elevating mechanism away from or close described fixed bed.
8. bottom electrode according to claim 7, it is characterized in that, when described insulating barrier adopts multiple described adjustable insulating element, the lifting layer of described multiple adjustable insulating element is driven by same described elevating mechanism or is driven by each self-corresponding elevating mechanism respectively.
9. bottom electrode according to claim 7, is characterized in that, described fixed bed is made up of dielectric material, and described lifting layer is made up of electric conducting material or dielectric material, or the material that described lifting layer is mixed by electric conducting material and dielectric material is made.
10. a plasma apparatus, comprise processing chamber and be arranged on the bottom electrode in described processing chamber, it is characterized in that, described bottom electrode adopts the bottom electrode described in claim 1-9 any one, meets technological requirement to make the ion energy on the workpiece to be machined surface be placed on insulating barrier along the distribution of the radial direction of described insulating barrier.
11. plasma apparatus according to claim 10, is characterized in that, described plasma apparatus is plasma etching equipment.
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| CN107610999A (en) * | 2017-08-28 | 2018-01-19 | 北京北方华创微电子装备有限公司 | Bottom electrode mechanism and reaction chamber |
| CN108054073A (en) * | 2017-11-02 | 2018-05-18 | 吴征威 | A kind of preparation method of plasma discharge electrode |
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| US6188564B1 (en) * | 1999-03-31 | 2001-02-13 | Lam Research Corporation | Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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