CN112530775A - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
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- CN112530775A CN112530775A CN201910880951.5A CN201910880951A CN112530775A CN 112530775 A CN112530775 A CN 112530775A CN 201910880951 A CN201910880951 A CN 201910880951A CN 112530775 A CN112530775 A CN 112530775A
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- plasma processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention discloses a plasma processing device, which is positioned in a reaction cavity of the plasma processing device and comprises: the gas spray header and the electrostatic chuck are oppositely arranged; the upper grounding ring is arranged around the gas spray header and is divided into a plurality of sub grounding areas along the annular direction; and each sub-grounding area is electrically connected with an impedance adjustable device positioned outside the reaction cavity. As can be seen from the above, in the technical solution provided by the present invention, the upper grounding ring is divided into a plurality of sub-grounding regions along the annular direction, and each sub-grounding region is electrically connected to an impedance adjusting device, so as to adjust the grounding impedance of the sub-grounding regions by adjusting the impedance of the impedance adjusting device; furthermore, the compensation of the asymmetry of the etching process is realized by optimizing the grounding impedance of different sub grounding areas, and finally the plasma processing device achieves the purpose of high etching uniformity.
Description
Technical Field
The invention relates to the technical field of plasma etching, in particular to a plasma processing device.
Background
In the manufacturing process of semiconductor devices, in order to form a predetermined pattern on a structural layer of a semiconductor wafer, a plasma processing apparatus is often used for manufacturing; specifically, a resist is used as a mask and is arranged on the structural layer, then the structural layer is placed in a plasma processing device, and the plasma generated by the plasma processing device is used for etching the area which is not covered by the mask, so that the structural layer with the preset pattern is finally manufactured. The existing plasma processing device has the factors of asymmetric element structures (such as substrate transmission channels) and the like, so that the condition of uneven etching can be caused, and the product performance and the yield are greatly influenced finally.
Disclosure of Invention
In view of the above, the present invention provides a plasma processing apparatus, which effectively solves the problems in the prior art, so that the plasma processing apparatus achieves the purpose of high etching uniformity.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a plasma processing apparatus comprising, located within a reaction chamber of the plasma processing apparatus:
the gas spray header and the electrostatic chuck are oppositely arranged;
the upper grounding ring is arranged around the gas spray header and is divided into a plurality of sub grounding areas along the annular direction;
and each sub-grounding area is electrically connected with an impedance adjustable device positioned outside the reaction cavity.
Optionally, the impedance adjusting device is a variable capacitance adjusting device.
Optionally, the variable capacitance adjusting device includes a fixed plate and a movable plate, wherein the sub-ground region is electrically connected to the fixed plate.
Optionally, the fixed polar plate and the movable polar plate are arranged in a direction opposite to each other, and the direction of the fixed polar plate is perpendicular to the direction of the gas spray header and the electrostatic chuck.
Optionally, the variable capacitance adjusting device includes a transmission device connected to the movable electrode plate;
the distance between the fixed polar plate and the movable polar plate is fixed, and the transmission device drives the movable polar plate to move in the direction vertical to the opposite direction of the fixed polar plate and the movable polar plate.
Optionally, the plasma processing apparatus further includes a protective cover fixed outside the reaction chamber, wherein the fixed electrode plate and the movable electrode plate are located inside the protective cover.
Optionally, the transmission is a motor transmission.
Optionally, the transmission is a pneumatic transmission.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides a plasma processing device, which is positioned in a reaction cavity of the plasma processing device and comprises: the gas spray header and the electrostatic chuck are oppositely arranged; the upper grounding ring is arranged around the gas spray header and is divided into a plurality of sub grounding areas along the annular direction; and each sub-grounding area is electrically connected with an impedance adjustable device positioned outside the reaction cavity. As can be seen from the above, in the technical solution provided by the present invention, the upper grounding ring is divided into a plurality of sub-grounding regions along the annular direction, and each sub-grounding region is electrically connected to an impedance adjusting device, so as to adjust the grounding impedance of the sub-grounding regions by adjusting the impedance of the impedance adjusting device; furthermore, the compensation of the asymmetry of the etching process is realized by optimizing the grounding impedance of different sub grounding areas, and finally the plasma processing device achieves the purpose of high etching uniformity.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of an upper ground ring according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another plasma processing apparatus according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As described in the background art, in the manufacturing process of a semiconductor device, in order to form a predetermined pattern on a structure layer of a semiconductor wafer, a plasma processing apparatus is often used for manufacturing; specifically, a resist is used as a mask and is arranged on the structural layer, then the structural layer is placed in a plasma processing device, and the plasma generated by the plasma processing device is used for etching the area which is not covered by the mask, so that the structural layer with the preset pattern is finally manufactured. The existing plasma processing device has the factors of asymmetric element structures (such as substrate transmission channels) and the like, so that the condition of uneven etching can be caused, and the product performance and the yield are greatly influenced finally.
In view of the above, the present invention provides a plasma processing apparatus, which effectively solves the problems in the prior art, so that the plasma processing apparatus achieves the purpose of high etching uniformity. In order to achieve the above object, the technical solutions provided by the embodiments of the present application are described in detail below, specifically with reference to fig. 1 to 3.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present disclosure, and fig. 2 is a schematic structural diagram of an upper ground ring according to an embodiment of the present disclosure, where a reaction chamber 500 of the plasma processing apparatus includes:
the gas spray header 100 and the electrostatic chuck 200 are oppositely arranged;
and an upper ground ring 300 disposed around the gas shower head 100, the upper ground ring 300 being divided into a plurality of sub-ground regions 310 along a circumferential direction;
and each sub-ground region 310 is electrically connected to an impedance tunable device 400 located outside the reaction chamber 500.
It can be understood that, in the technical solution provided in this application, the upper ground ring is divided into a plurality of sub-ground areas along the annular direction, and each sub-ground area is electrically connected to an impedance adjusting device, so as to adjust the ground impedance of the sub-ground area by adjusting the impedance of the impedance adjusting device. The impedance adjustment of the sub grounding areas reflects that different etching rates and appearances can be generated when the plasma processing device carries out etching process, and further the compensation of the asymmetry of the etching process is realized by optimizing the grounding impedance of different sub grounding areas, namely, the asymmetry of the etching process of the plasma processing device caused by the asymmetry of the reaction cavity is adjusted, and finally the plasma processing device achieves the purpose of high etching uniformity.
It should be noted that, in the working process of the plasma processing apparatus provided in the embodiment of the present application, when the impedance of each impedance adjusting apparatus is optimally adjusted, the impedance size needs to be optimally adjusted according to the actual situation in the working process, specifically, each impedance adjusting apparatus can be separately optimally adjusted through a software system, and the present application does not specifically limit the impedance size adjustment trend of each impedance adjusting apparatus.
The plasma processing device that this application embodiment provided, including the reaction chamber that is enclosed to close by roof, lateral wall and diapire, set up various component structures in the reaction chamber, and be used for placing pending substrate. The side wall and the grounding ring provided by the embodiment of the application can be connected through the bottom wall. The reaction chamber provided herein may be cylindrical or other shapes, and the present application is not limited thereto. The reaction chamber may be evacuated. Except the air inlet, the air outlet and the substrate inlet and outlet channel, other parts of the reaction cavity are kept closed and isolated from the outside in the treatment process. The gas inlet is connected to an external gas source for continuously supplying process gas to the reaction chamber during the process. The exhaust port is connected with an external pump, and is used for exhausting waste gas generated in the treatment process out of the reaction cavity and controlling the air pressure in the reaction cavity.
The reaction cavity of the plasma processing device provided by the embodiment of the application comprises a gas spray header and an electrostatic chuck which are oppositely arranged, wherein the gas spray header can comprise an upper electrode and is used for guiding gas into the reaction cavity; the electrostatic chuck comprises a lower electrode, and the lower electrode is connected with a high-frequency power source. The upper electrode and the lower electrode are oppositely arranged, and the area between the upper electrode and the lower electrode is a processing area which forms high-frequency energy to ignite and maintain plasma. The substrate to be processed is fixedly arranged on the electrostatic chuck below the processing area. In the working process of the high-frequency power source, the upper electrode and the lower electrode, most of electric fields are limited in a processing area between the upper electrode and the lower electrode, and the electric fields accelerate a small amount of electrons in a reaction cavity to make the electrons collide with gas molecules of reaction gas input by a gas spray header; these collisions result in ionization of the reactant gases and excitation of the plasma, thereby generating a plasma within the reaction chamber; neutral gas molecules of the reactant gas lose electrons when subjected to these strong electric fields, leaving positively charged ions behind; the positively charged ions are accelerated towards the lower electrode, combined with neutral substances in the substrate to be processed, and subjected to etching or deposition and other process treatments.
In an embodiment of the present application, the impedance adjusting apparatus provided in the present application is a variable capacitance adjusting apparatus. The variable capacitance adjusting device comprises a fixed polar plate and a movable polar plate, wherein the sub-grounding area is electrically connected with the fixed polar plate. And the relative setting direction of the fixed polar plate and the movable polar plate, which is provided by the embodiment of the application, is vertical to the relative setting direction of the gas spray header and the electrostatic chuck.
In the embodiment of the present invention, the arrangement structure of the fixed electrode plate and the movable electrode plate of the variable capacitance adjusting device is not particularly limited, and it is necessary to design the arrangement structure specifically according to the actual application.
To achieve the purpose of performing capacitance adjustment on a capacitor device formed by a fixed plate and a movable plate, referring to fig. 3 specifically, which is a schematic structural diagram of another plasma processing apparatus provided in this embodiment of the present application, a variable capacitance adjustment apparatus 400 provided in this embodiment of the present application includes a fixed plate 411 and a movable plate 412, and the sub-ground region 310 is electrically connected to the fixed plate 411. The direction x in which the fixed plate 411 and the movable plate 412 are disposed opposite to each other is perpendicular to the direction y in which the gas shower head 100 and the electrostatic chuck 200 are disposed opposite to each other.
In one embodiment, the variable capacitance tuning device 400 provided by the embodiment of the present application includes an actuator 413 connected to a movable plate 412
The distance between the fixed pole plate 411 and the movable pole plate 412 is fixed, and the transmission device 413 drives the movable pole plate 412 to move in a direction perpendicular to the opposite direction of the fixed pole plate 411 and the movable pole plate 412.
It can be understood that, in the variable capacitance adjusting device provided in the embodiment of the present application as shown in fig. 3, the distance between the fixed electrode plate and the movable electrode plate is fixed, so that the movable electrode plate of the transmission belt connected to the movable electrode plate moves in the opposite direction along the vertical direction between the fixed electrode plate and the movable electrode plate, and further the overlapping area between the fixed electrode plate and the movable electrode plate is changed, thereby achieving the purpose of adjusting the capacitance of the variable capacitance adjusting device, and further achieving the purpose of adjusting the ground impedance of the sub-ground region connected to the variable capacitance adjusting device.
It should be noted that, when the fixed pole plate and the movable pole plate provided in the embodiment of the present application are completely overlapped, the application does not limit the overlapping area between the fixed pole plate and the movable pole plate, that is, the size of the fixed pole plate and the movable pole plate is not specifically limited. Wherein, the overlapping area of the capacitors formed by all the fixed polar plates and the movable polar plates can be the same; or the overlapping areas of the capacitors formed by all the fixed polar plates and the movable polar plates are different; or in the capacitors formed by all the fixed polar plates and the movable polar plates, the overlapping areas of partial capacitors are the same, and the overlapping areas of partial capacitors are different, so that the capacitors are designed according to actual application.
And all the movable polar plates provided by the embodiment of the application can be connected to connect with the reference voltage, and then all the movable polar plates are driven to move through one transmission device, namely all the variable capacitance adjusting devices share the same transmission device. Alternatively, all the movable electrode plates provided in the embodiment of the present application are independently connected to a reference voltage, and each movable electrode plate is connected to a transmission device, and the transmission device connected to each movable electrode plate drives the movable electrode plate to move.
In an embodiment of the present application, the transmission device provided in the present application may be a motor transmission device, and may also be a pneumatic transmission device, and the present application is not particularly limited thereto.
Further, in order to protect the capacitor formed by the fixed plate and the movable plate and avoid the external environment from affecting the capacitor, referring to fig. 3, the plasma processing apparatus provided in the embodiment of the present application further includes a protective cover 600 fixed outside the reaction chamber 500, wherein the fixed plate 411 and the movable plate 412 are located inside the protective cover 600.
It can be understood that, in the plasma processing apparatus provided in the embodiment of the present application, the fixed polar plate, the movable polar plate and the transmission device are disposed outside the reaction chamber, which can not only prevent the fixed polar plate, the movable polar plate and the transmission device from affecting the arrangement of each component device in the limited space in the reaction chamber, but also prevent the fixed polar plate and the movable polar plate from affecting the electric field in the reaction chamber. And, set up fixed polar plate and movable polar plate in the protection casing, can reduce the probability of fixed polar plate and movable polar plate damage and improve the influence of external environment.
The embodiment of the present application provides a plasma processing apparatus, which is located in a reaction chamber of the plasma processing apparatus, and comprises: the gas spray header and the electrostatic chuck are oppositely arranged; the upper grounding ring is arranged around the gas spray header and is divided into a plurality of sub grounding areas along the annular direction; and each sub-grounding area is electrically connected with an impedance adjustable device positioned outside the reaction cavity. As can be seen from the above, in the technical solution provided in the embodiment of the present application, the upper grounding ring is divided into a plurality of sub-grounding regions along the annular direction, and each sub-grounding region is electrically connected to an impedance adjusting device, so as to adjust the grounding impedance of the sub-grounding regions by adjusting the impedance of the impedance adjusting device; furthermore, the compensation of the asymmetry of the etching process is realized by optimizing the grounding impedance of different sub grounding areas, and finally the plasma processing device achieves the purpose of high etching uniformity.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A plasma processing apparatus, comprising, in a reaction chamber of the plasma processing apparatus:
the gas spray header and the electrostatic chuck are oppositely arranged;
the upper grounding ring is arranged around the gas spray header and is divided into a plurality of sub grounding areas along the annular direction;
and each sub-grounding area is electrically connected with an impedance adjustable device positioned outside the reaction cavity.
2. The plasma processing apparatus of claim 1 wherein the impedance-adjustable device is a variable capacitance adjustment device.
3. The plasma processing apparatus of claim 2, wherein the variable capacitance tuning device comprises a fixed plate and a movable plate, wherein the sub-ground region is electrically connected to the fixed plate.
4. The plasma processing apparatus according to claim 3, wherein the fixed electrode plate is disposed in a direction perpendicular to a direction in which the gas shower head and the electrostatic chuck are disposed opposite to the movable electrode plate.
5. The plasma processing apparatus of claim 4 wherein the variable capacitance tuning device comprises an actuator coupled to the movable plate;
the distance between the fixed polar plate and the movable polar plate is fixed, and the transmission device drives the movable polar plate to move in the direction vertical to the opposite direction of the fixed polar plate and the movable polar plate.
6. The plasma processing apparatus of claim 3, further comprising a shield secured outside the reaction chamber, wherein the fixed plate and the movable plate are located within the shield.
7. The plasma processing apparatus of claim 5 wherein the transmission is a motor transmission.
8. The plasma processing apparatus of claim 5 wherein the actuator is a pneumatic actuator.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910880951.5A CN112530775A (en) | 2019-09-18 | 2019-09-18 | Plasma processing device |
| TW109127949A TWI753535B (en) | 2019-09-18 | 2020-08-17 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910880951.5A CN112530775A (en) | 2019-09-18 | 2019-09-18 | Plasma processing device |
Publications (1)
| Publication Number | Publication Date |
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| CN112530775A true CN112530775A (en) | 2021-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910880951.5A Pending CN112530775A (en) | 2019-09-18 | 2019-09-18 | Plasma processing device |
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| CN (1) | CN112530775A (en) |
| TW (1) | TWI753535B (en) |
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2019
- 2019-09-18 CN CN201910880951.5A patent/CN112530775A/en active Pending
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2020
- 2020-08-17 TW TW109127949A patent/TWI753535B/en active
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| CN101465283A (en) * | 2007-12-20 | 2009-06-24 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
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| Publication number | Publication date |
|---|---|
| TW202114043A (en) | 2021-04-01 |
| TWI753535B (en) | 2022-01-21 |
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