CN112713075A - Plasma isolating ring, plasma processing device and substrate processing method - Google Patents
Plasma isolating ring, plasma processing device and substrate processing method Download PDFInfo
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- CN112713075A CN112713075A CN201911024441.4A CN201911024441A CN112713075A CN 112713075 A CN112713075 A CN 112713075A CN 201911024441 A CN201911024441 A CN 201911024441A CN 112713075 A CN112713075 A CN 112713075A
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- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 238000002955 isolation Methods 0.000 claims abstract description 153
- 238000000034 method Methods 0.000 claims abstract description 61
- 238000005530 etching Methods 0.000 claims abstract description 59
- 239000004020 conductor Substances 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 57
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000011810 insulating material Substances 0.000 claims description 34
- 230000002708 enhancing effect Effects 0.000 claims description 12
- 239000007921 spray Substances 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 124
- 239000007789 gas Substances 0.000 description 17
- 230000036470 plasma concentration Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a plasma isolating ring, a plasma processing device and a substrate processing method suitable for multi-process requirements. Wherein, this plasma isolating ring includes: the lower isolation ring is made of a first conductive material and provided with a first wall body in an annular shape; the upper isolation ring is made of a second conductive material, is fixed with the lower isolation ring and is provided with an annular second wall body; the plasma isolation ring moves within the plasma processing apparatus to confine plasma within a respective wall of one of the lower isolation ring and the upper isolation ring. When the plasma processing device suitable for the plasma isolating ring carries out different process processing on the substrate, different etching process requirements can be met only by moving the isolating ring made of materials with different electric conductivities, and the isolating ring does not need to be replaced by opening the reaction cavity.
Description
Technical Field
The invention relates to the technical field of plasma etching, in particular to a plasma isolating ring, a plasma processing device and a substrate processing method which are suitable for multi-process requirements.
Background
In the plasma etching equipment, the plasma isolating ring is used for isolating plasma and protecting the inner wall of the reaction cavity. According to different substrate processing requirements, a process for etching a central area of a substrate relatively strongly and etching an edge area relatively weakly needs to be realized sometimes, and a process for etching an edge area of the substrate strongly needs to be realized sometimes.
In the prior art, plasma isolating rings made of different materials are usually designed, and the plasma isolating rings made of the corresponding materials are selected when different processes are needed. However, when different processes are performed in the same chamber, the reaction chamber needs to be opened to replace the plasma isolation ring, which inevitably damages the vacuum environment in the reaction chamber, and although the reaction chamber can be cleaned and vacuumized again, time and labor costs are wasted.
Therefore, a solution for performing different processes on a substrate without damaging the vacuum environment in the reaction chamber is needed.
Disclosure of Invention
In view of the above, the present invention provides a plasma isolation ring, which effectively solves the problems in the prior art, so that the plasma processing apparatus can achieve the purpose of performing different processes on a substrate without damaging the vacuum environment in a reaction chamber.
To achieve the above object, the present invention provides a plasma barrier ring for a plasma processing apparatus, comprising:
the lower isolation ring is made of a first conductive material and provided with a first wall body in an annular shape;
the upper isolation ring is made of a second conductive material, is fixed with the lower isolation ring and is provided with an annular second wall body;
wherein the plasma isolation ring moves within the plasma processing apparatus to confine plasma within a respective wall of one of the lower isolation ring and the upper isolation ring.
Optionally, the substrate includes a central region and an edge region, one of the first conductive material and the second conductive material is an insulating material, and the other is a conductive material, and the isolation ring made of the insulating material is used to implement a process in which the central region of the substrate is etched relatively strongly and the edge region is etched relatively weakly; the isolating ring made of the conductive material is used for realizing the process for enhancing the etching performance of the edge area of the substrate.
Optionally, the lower isolation ring is made of an insulating material and the upper isolation ring is made of a conductive material, or the lower isolation ring is made of a conductive material and the upper isolation ring is made of an insulating material.
Optionally, the conductive material is a metal conductor or a semiconductor material.
Optionally, the conductive material is an aluminum alloy.
Optionally, the insulating material is quartz or ceramic.
Optionally, the conductive material is grounded.
Optionally, the lower isolation ring and the upper isolation ring are riveted and fixed through screws.
The present invention also provides a plasma processing apparatus comprising:
a reaction chamber defined by a plurality of walls;
a susceptor disposed in the reaction chamber for holding a substrate having a central region and an edge region;
the gas spray header is arranged in the reaction cavity and used for introducing gas into the reaction cavity, and a plasma processing area is arranged between the gas spray header and the base;
disposing a plasma isolator ring around the gas showerhead, the plasma isolator ring having the features described above;
and the driving device is used for providing driving force for the movement of the plasma isolation ring so as to guide the upper isolation ring and the lower isolation ring of the plasma isolation ring to switch the stations and enable the corresponding wall body of one of the stations to surround the plasma processing area.
Optionally, the driving device is configured to drive the plasma isolation ring to switch between an initial station, a first station, and a second station.
Optionally, the initial station is that the upper isolation ring and the lower isolation ring are both located above the base to provide an abdicating space for the transmission of the substrate.
Optionally, the first station is that the upper isolation ring surrounds the periphery of the gas shower head, and the first wall body of the lower isolation ring surrounds the plasma processing region.
Optionally, the second station is that the second wall body of the upper isolation ring surrounds the plasma processing region, and the lower isolation ring surrounds the periphery of the base.
Optionally, the upper isolation ring is made of a conductive material, and the lower isolation ring is made of an insulating material.
Optionally, the upper isolation ring is made of an insulating material, and the lower isolation ring is made of a conductive material.
Optionally, the isolation ring made of the insulating material is used for realizing a process in which the etching of the central area of the substrate is relatively strong and the etching of the edge area is relatively weak; the isolating ring made of the conductive material is used for realizing the process for enhancing the etching performance of the edge area of the substrate.
Optionally, the plasma processing apparatus further includes a plasma confinement ring surrounding the base, and a diameter of an inner surface of a sidewall of the first wall of the lower confinement ring is greater than a diameter of an outer surface of a sidewall of an outer ring of the plasma confinement ring, so that the inner surface of the sidewall of the first wall of the lower confinement ring is close to the outer surface of the sidewall of the outer ring of the plasma confinement ring in the switching processes of the first station, the second station and the two stations.
Optionally, the plasma processing apparatus further comprises a plasma confinement ring surrounding the susceptor, and the minimum inner diameter dimension of the lower isolation ring is greater than the inner diameter dimension of the plasma confinement ring.
Optionally, the driving device is an air cylinder, an electric cylinder or a motor.
The invention also provides a substrate processing method, which comprises the following steps:
providing a plasma processing apparatus as described above;
one of the upper isolation ring and the lower isolation ring is made of an insulating material, and the other is made of a conductive material.
Enabling a plasma isolation ring driven by a driving device to be located at an initial station above a base;
conveying the substrate from the channel formed in the reaction cavity to the base;
the driving device drives the wall body of the isolating ring made of insulating materials to surround the substrate and restrains the plasma processing area in the area surrounded by the wall body so as to realize the process that the etching of the central area of the substrate is relatively strong and the etching of the edge area of the substrate is relatively weak; or the driving device drives the wall body of the isolation ring made of the conductive material to surround the substrate and restrains the plasma processing area in the area surrounded by the wall body so as to realize the process of enhancing the etching performance of the edge area of the substrate.
Optionally, the upper isolation ring is made of a conductive material, the lower isolation ring is made of an insulating material, and the lower isolation ring is driven to surround the plasma processing region when a process that the etching of the central region of the substrate is relatively strong and the etching of the edge region of the substrate is relatively weak is required to be realized; when the process for enhancing the etching performance of the edge area of the substrate is needed to be realized, the upper isolation ring is driven to surround the plasma processing area.
Optionally, the upper isolation ring is made of an insulating material, the lower isolation ring is made of a conductive material, and the upper isolation ring is driven to surround the plasma processing region when a process that the etching of the central region of the substrate is relatively strong and the etching of the edge region of the substrate is relatively weak is required to be realized; when the process for enhancing the etching performance of the edge area of the substrate is needed to be realized, the lower isolation ring is driven to surround the plasma processing area.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages: the novel plasma isolating ring provided by the invention is composed of an upper isolating ring and a lower isolating ring, wherein the two isolating rings are made of materials with different electric conductivities, and different electromagnetic field intensity distributions at the edge area of the substrate are realized through different electromagnetic field shielding effects of the materials with different electric conductivities, so that the plasma concentration difference at the edge of the substrate is caused, and different processes for treating the substrate are realized. In the use process, the substrate can be etched by the corresponding process only by selecting the isolating ring made of the corresponding conductive material to limit the plasma processing area, and the isolating ring does not need to be replaced by opening the reaction cavity, so that the time and the labor are saved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 discloses a plasma processing apparatus with a plasma screen ring at an initial station;
FIG. 2 discloses a plasma processing apparatus with a plasma screen ring at a first station;
FIG. 3 discloses a plasma processing apparatus with a plasma screen ring at a second station;
fig. 4 discloses a graph of plasma concentration profiles from the center of the substrate to both sides at the first and second stations.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 to 3 each illustrate a capacitively-coupled plasma processing apparatus. The plasma processing apparatus includes a reaction chamber 1 enclosed by a plurality of walls. The walls enclosing the reaction chamber 1 are grounded. A base 2 for fixing a substrate, a gas spray header 3 for introducing etching gas into the reaction chamber 1, a plasma isolation ring 4 arranged around the gas spray header 3, and a driving device 5 for providing driving force for the movement of the plasma isolation ring 4 are arranged in the reaction chamber 1. Typically, the susceptor 2 may serve as a bottom electrode and the showerhead 3 may serve as a top electrode. A plasma processing region is formed between the gas shower head 3 and the susceptor 2. An rf power (not shown) is applied to the pedestal 2 to dissociate the etching gas in the plasma processing region into plasma and radicals, which etch the substrate into a predetermined pattern. Etch byproducts generated by the etching and etch gases that have not yet reacted are pumped out of the reaction chamber by a pump (not shown).
An electrostatic chuck 21 is provided on the susceptor 2 for supporting and holding a substrate including a center region and an edge region.
The plasma isolation ring 4 includes a lower isolation ring 41 made of a first conductive material and an upper isolation ring 42 made of a second conductive material. The lower isolation ring 41 has an annular first wall body, and the upper isolation ring 42 has an annular second wall body, and the two isolation rings are fixed by means of screw riveting or the like. The plasma separating ring 4 is driven by the driving device 5 to move in the plasma processing device and switch the working positions so as to restrain the plasma in the corresponding wall body of one of the lower separating ring 41 and the upper separating ring 42. The vertical section of each isolation ring is in an inverted L shape so as to match with the outer ring part 62 of the plasma confinement ring 6, the vertical section of which is in the L shape, in the substrate etching process treatment, so as to prevent the plasma from diffusing to each wall surface of the reaction chamber 1 to generate the bad phenomenon of corrosion.
The driving device 5 is one of an air cylinder, an electric cylinder or a motor. The driving device 5 guides the plasma isolating ring 4 to move in the plasma processing device by driving a shaft bracket 7 arranged on the reaction chamber 1, so that the plasma isolating ring 4 is switched to an initial station, a first station or a second station according to the requirements of the substrate processing process. The end of the shaft bracket 7 extending into the reaction chamber 1 is connected with the plasma isolating ring 4, and the part of the shaft bracket 7 extending out of the reaction chamber 1 is connected with the driving device 5. The driving device 5 drives the shaft bracket 7 to lift up and down so as to drive the plasma isolating ring 4 to move in the reaction cavity and change different stations, so that the aim of conveying the substrate or restraining the plasma to perform etching process treatment on the substrate is fulfilled.
Fig. 1 shows a plasma processing apparatus in which a driving device drives a plasma barrier ring 4 at an initial station. In the initial station state, the upper and lower isolation rings 42 and 41 of the plasma isolation ring 4 are located above the susceptor 2, and the substrate may be transferred onto the susceptor 2 from an opening provided in a sidewall of the plasma processing apparatus by a robot (not shown) and supported and fixed by the electrostatic chuck 21.
Fig. 2 shows the plasma processing apparatus in which the driving means drives the plasma barrier ring 4 at the first station. In the first station state, the upper isolation ring 42 surrounds the periphery of the gas spray header 3; the first wall of the lower isolation ring 41 is moved to surround the substrate and confine the plasma processing region within the wall to perform a first process to etch the substrate.
Fig. 3 shows the plasma processing apparatus in which the driving means drives the plasma barrier ring 4 at the second station. In the second station state, the second wall of the upper isolation ring 42 is moved to surround the substrate and confine the plasma processing region within the wall for the second process to etch the substrate; the lower isolation ring 41 surrounds the periphery of the base. The minimum inner diameter of each isolation ring of the plasma isolation ring 4 is larger than the inner diameter of the plasma confinement ring 6, that is, when the plasma isolation ring 4 is lowered to the second station, the innermost wall surface of the lower isolation ring 41 does not directly abut against the susceptor as the plasma confinement ring, so that the etching by-products generated by etching and the etching gas which does not participate in the reaction can flow into the plasma confinement ring 6 in the space generated between the lower isolation ring 41 and the susceptor 2 in the transverse distance, the by-product gas and the gas which does not participate in the reaction are exhausted from the plasma processing region through the plasma confinement ring 6, and the lower isolation ring 41 does not limit the normal exhaust of the by-products and the gas.
The upper and lower isolation rings of the plasma isolation ring 4 shown in fig. 1 to 3 of the present application are made of materials with different conductivities, so as to form different electric field distributions in the plasma processing region, thereby realizing processing of different processes. In one embodiment, the lower isolation ring 41 is made of an insulating material, i.e., the first conductivity material is an insulating material, preferably quartz or ceramic; the upper isolation ring 42 is made of a conductive material, i.e., the second conductive material is a conductive material, which is a metal conductor or a semiconductor material, preferably an aluminum alloy. Since the distribution of the electric field formed in the plasma processing region is different by using the isolation rings made of different materials, resulting in different plasma distributions in the plasma processing region, when the etching effect of the edge region and the central region of the substrate needs to be adjusted, the isolation rings made of suitable materials can be selected to confine the plasma processing region, and the difference between the processes that can be achieved by using the lower isolation ring 41 made of insulating material and the upper isolation ring 42 made of conductive material is described below.
In a plasma processing apparatus, in order to generate plasma, a radio frequency power source (not shown in the figure) is generally applied to a reaction chamber, the radio frequency power source forms a radio frequency electric field between an upper electrode and a lower electrode in the plasma processing apparatus, when a lower isolation ring 41 made of an insulating material is used for limiting a plasma processing area (namely, at a first station in fig. 2), because the isolation ring has a certain thickness, two capacitors connected in series are added on a path of the electric field transmitted to the side wall of the reaction chamber, namely, the capacitor of the isolation ring and the capacitor between the isolation ring and the side wall of the reaction chamber; when the isolating ring is made of a conductive material, because the conductive material has no capacitance problem, the capacitance between the conductive isolating ring and the side wall of the reaction cavity only exists on the electric field transmission path, and because the capacitance becomes smaller after the two capacitors are connected in series, and the smaller the capacitance, the smaller the radio frequency electric field passing current is, when the isolating ring is made of an insulating material, the radio frequency electric field reaching the side wall of the reaction cavity is less in distribution, and the quantity of plasmas generated by dissociation around the side wall of the reaction cavity is less. When the isolating ring is made of conductive materials, the radio frequency electric field near the side wall of the reaction cavity is distributed more, the number of plasmas generated by dissociation is larger, and the plasma concentration of the central area of the insulating isolating ring is higher than that of the central area of the isolating ring made of conductive materials on the premise that the total number of plasmas in the reaction area is not changed. Therefore, the plasma concentration in the reaction cavity presents different distribution curves, and when the substrate is subjected to plasma treatment with different requirements, the isolation ring made of the required material can be selected to surround the reaction area according to the required plasma concentration distribution.
Specifically, as shown in fig. 4, when the material of the isolation ring surrounding the reaction region is an insulating material, the obtained plasma concentration distribution curve in the reaction region is shown as a curve a, and when the material of the isolation ring surrounding the reaction region is a conductive material, the obtained plasma concentration distribution curve in the reaction region is shown as a curve b.
When the substrate is etched, the plasma concentration at the edge region of the curve a is lower than that of the curve b, at the same time, the plasma concentration at the central region of the curve a is higher than that of the curve b, in some processes where it is desirable to improve the etching performance of the substrate edge region, it is an option to use an upper isolation ring 42 made of conductive material to define the plasma processing region (i.e., at the second station in fig. 3), to ground the upper isolation ring 42 made of conductive material, so that the plasma concentration at the substrate edge is increased (refer to line b in fig. 4), when etching the substrate, although the etching at the edge of the substrate is weaker than that at the center of the substrate, the etching effect at the edge area of the substrate is significantly enhanced when the upper isolation ring 42 made of a conductive material is used, compared to the process that can be achieved by using the lower isolation ring 41 made of an insulating material.
The plasma processing apparatus of the present application further includes a plasma confinement ring 6 surrounding the susceptor 2. The plasma confinement ring 6 includes an annular inner ring portion 61 and an outer ring portion 62 surrounding the inner ring portion 61 and having an L-shaped vertical cross section. The inner ring part 61 is provided with a constraint channel in the thickness direction, and the height of the constraint channel is larger than the mean free path of the plasma, so that the constraint channel can effectively inhibit the plasma from diffusing outwards from the plasma constraint ring 6 to corrode each wall surface of the reaction cavity 1 in the process of etching the substrate at the first station and the second station. The diameter of the inner surface of the side wall of the first wall body of the lower isolation ring 41 of the plasma isolation ring 4 is larger than the diameter of the outer surface of the side wall of the outer ring part 62 of the plasma confinement ring 6, so that the inner surface of the side wall of the first wall body of the lower isolation ring 41 and the outer surface of the side wall of the outer ring part 62 of the plasma confinement ring 6 do not rub during the switching process of the first station, the second station and the two stations of the plasma isolation ring 4, so as to reduce the generation of particle pollutants, and simultaneously, the step arranged on the lower isolation ring is matched with the upper surface of the side wall of the outer ring 62, so as to prevent the plasma from diffusing into the chamber to corrode the inner wall of each chamber during the process etching of the substrate. Compared with the conventional plasma processing apparatus, although two isolation rings made of different materials are used for superposition processing in the present application, the structural characteristics of the plasma confinement ring 6 do not need to be changed, but the plasma confinement ring 6 can be moved downward in the vertical direction by a distance to leave a space for the lower isolation ring 41 or make a thinning arrangement for the plasma confinement ring 6 in the vertical direction as a whole, which does not affect any process effect to be achieved in the present application and does not affect the effect that the plasma confinement ring 6 should achieve.
The plasma processing apparatus of the present application further comprises a bellows 8 having one end connected to the upper wall of the reaction chamber 1 and the other end connected to the pedestal 7, the bellows 8 having elasticity to be lifted and lowered synchronously in a state where the pedestal 7 is driven to be lifted and lowered. The bellows 8 seals a gap formed by the elevation between the shaft holder 7 and the upper wall of the reaction chamber 1 to prevent external gas from entering the reaction chamber 1.
The following describes a method of processing a substrate in a plasma processing apparatus of the present application:
referring to FIG. 1, the driving device 5 is not operated, and the plasma baffle ring 4 is located at the initial station above the susceptor 2, so that the substrate can be transferred from the channel formed on the sidewall of the reaction chamber 1 to the susceptor 2 by a robot and supported and fixed by the electrostatic chuck 21.
Referring to fig. 2, if it is required to achieve a process effect (first process etching) that the etching of the central region of the substrate is relatively strong and the etching of the edge region of the substrate is relatively weak, the driving device 5 performs a driving operation to move and lower the plasma isolation ring 4 to the first station through the shaft bracket 7, and at this time, the first wall body of the lower isolation ring 41 made of an insulating material is guided to be lowered to surround the substrate and confine the plasma processing region to the region surrounded by the first wall body, so as to complete the first process etching of the substrate.
Referring to fig. 3, if it is required to achieve the process effect of enhancing the etching performance of the substrate edge region (second process etching), the driving device 5 performs the driving operation to move and lower the plasma isolation ring 4 to the second station through the shaft bracket 7, and at this time, the second wall of the upper isolation ring 42 made of the conductive material and performing the grounding process is guided to be lowered to surround the substrate and confine the plasma processing region to the region surrounded by the second wall, so as to complete the second process etching of the substrate.
Of course, in other embodiments, the isolation ring made of insulating material in the present application may be used as the upper isolation ring; the isolation ring made of a conductive material in the present application is used as a lower isolation ring, and the lower isolation ring is simultaneously grounded. Like the above-mentioned influence of different materials on the shielding performance of the electric field, if a process effect (first process etching) that the etching of the central area of the substrate is relatively strong and the etching of the edge area of the substrate is relatively weak is to be realized, only the upper isolation ring made of insulating material needs to be driven to surround the plasma processing area; in order to achieve the above-mentioned process effect (second process etching) of enhancing the etching performance of the substrate edge region, it is only necessary to drive the lower isolation ring made of a conductive material to surround the plasma processing region.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (22)
1. A plasma isolator ring for a plasma processing apparatus, the plasma isolator ring comprising:
the lower isolation ring is made of a first conductive material and provided with a first wall body in an annular shape;
the upper isolation ring is made of a second conductive material, is fixed with the lower isolation ring and is provided with an annular second wall body;
wherein the plasma isolation ring moves within the plasma processing apparatus to confine plasma within a respective wall of one of the lower isolation ring and the upper isolation ring.
2. The plasma isolator ring of claim 1, wherein: the substrate comprises a central area and an edge area, one of the first conductivity type material and the second conductivity type material is an insulating material, the other one is a conductive material, and the isolating ring made of the insulating material is used for realizing a process that the etching of the central area of the substrate is relatively strong and the etching of the edge area is relatively weak; the isolating ring made of the conductive material is used for realizing the process for enhancing the etching performance of the edge area of the substrate.
3. The plasma isolation ring of claim 2, wherein: the lower isolation ring is made of an insulating material and the upper isolation ring is made of a conductive material, or the lower isolation ring is made of a conductive material and the upper isolation ring is made of an insulating material.
4. The plasma isolation ring of claim 2 or 3, wherein: the conductive material is a metal conductor or a semiconductor material.
5. The plasma isolation ring of claim 4, wherein: the conductive material is aluminum alloy.
6. The plasma isolation ring of claim 2 or 3, wherein: the insulating material is quartz or ceramic.
7. The plasma isolation ring of claim 2 or 3, wherein: the conductive material is grounded.
8. The plasma isolator ring of claim 1, wherein: the lower isolating ring and the upper isolating ring are riveted and fixed through screws.
9. A plasma processing apparatus, comprising:
a reaction chamber defined by a plurality of walls;
a susceptor disposed in the reaction chamber for holding a substrate having a central region and an edge region;
the gas spray header is arranged in the reaction cavity and used for introducing gas into the reaction cavity, and a plasma processing area is arranged between the gas spray header and the base;
disposing a plasma screen ring around the gas showerhead, the plasma screen ring having the features of claim 1;
and the driving device is used for providing driving force for the movement of the plasma isolation ring so as to guide the upper isolation ring and the lower isolation ring of the plasma isolation ring to switch the stations and enable the corresponding wall body of one of the stations to surround the plasma processing area.
10. The plasma processing apparatus according to claim 9, wherein: the driving device is used for driving the plasma isolating ring to switch among an initial station, a first station and a second station.
11. The plasma processing apparatus as claimed in claim 10, wherein: the initial station is that the upper isolation ring and the lower isolation ring are both positioned above the base so as to provide a yielding space for the transmission of the substrate.
12. The plasma processing apparatus as claimed in claim 10, wherein: the first station is that the upper isolation ring surrounds the periphery of the gas spray head, and the first wall body of the lower isolation ring surrounds the plasma processing area.
13. The plasma processing apparatus as claimed in claim 10, wherein: the second station is that the second wall body of the upper isolation ring surrounds the plasma processing area, and the lower isolation ring surrounds the periphery of the base.
14. The plasma processing apparatus according to claim 9, wherein: the upper isolation ring is made of a conductive material, and the lower isolation ring is made of an insulating material.
15. The plasma processing apparatus according to claim 9, wherein: the upper isolation ring is made of an insulating material, and the lower isolation ring is made of a conductive material.
16. The plasma processing apparatus according to claim 14 or 15, wherein: the isolation ring made of the insulating material is used for realizing a process that the etching of the central area of the substrate is relatively strong and the etching of the edge area is relatively weak; the isolating ring made of the conductive material is used for realizing the process for enhancing the etching performance of the edge area of the substrate.
17. The plasma processing apparatus according to claim 9, wherein: the plasma processing device further comprises a plasma confinement ring surrounding the base, wherein the diameter of the inner surface of the side wall of the first wall body of the lower isolation ring is larger than that of the outer surface of the side wall of the outer ring part of the plasma confinement ring, so that the inner surface of the side wall of the first wall body of the lower isolation ring is close to the outer surface of the side wall of the outer ring part of the plasma confinement ring in the switching process of the first station, the second station and the two stations.
18. The plasma processing apparatus according to claim 9, wherein: the plasma processing apparatus further includes a plasma confinement ring surrounding the pedestal, the lower isolation ring having a minimum inner diameter dimension greater than an inner diameter dimension of the plasma confinement ring.
19. The plasma processing apparatus according to claim 9, wherein: the driving device is a cylinder or an electric cylinder or a motor.
20. A method of processing a substrate, comprising:
providing a plasma processing apparatus as recited in claim 9;
one of the upper isolation ring and the lower isolation ring is made of an insulating material, and the other is made of a conductive material.
Enabling a plasma isolation ring driven by a driving device to be located at an initial station above a base;
conveying the substrate from the channel formed in the reaction cavity to the base;
the driving device drives the wall body of the isolating ring made of insulating materials to surround the substrate and restrains the plasma processing area in the area surrounded by the wall body so as to realize the process that the etching of the central area of the substrate is relatively strong and the etching of the edge area of the substrate is relatively weak; or the driving device drives the wall body of the isolation ring made of the conductive material to surround the substrate and restrains the plasma processing area in the area surrounded by the wall body so as to realize the process of enhancing the etching performance of the edge area of the substrate.
21. The substrate processing method according to claim 20, wherein: the upper isolation ring is made of a conductive material, the lower isolation ring is made of an insulating material, and the lower isolation ring is driven to surround the plasma processing area when the process that the etching of the central area of the substrate is relatively strong and the etching of the edge area of the substrate is relatively weak is needed; when the process for enhancing the etching performance of the edge area of the substrate is needed to be realized, the upper isolation ring is driven to surround the plasma processing area.
22. The substrate processing method according to claim 20, wherein: the upper isolation ring is made of an insulating material, the lower isolation ring is made of a conductive material, and the upper isolation ring is driven to surround the plasma processing area when the process that the etching of the central area of the substrate is relatively strong and the etching of the edge area of the substrate is relatively weak is needed; when the process for enhancing the etching performance of the edge area of the substrate is needed to be realized, the lower isolation ring is driven to surround the plasma processing area.
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| WO2024006342A1 (en) * | 2022-06-29 | 2024-01-04 | Lam Research Corporation | Parasitic plasma suppressor |
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| TWI817045B (en) | 2023-10-01 |
| CN112713075B (en) | 2024-03-12 |
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