CN213660344U - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
- Publication number
- CN213660344U CN213660344U CN202023252329.7U CN202023252329U CN213660344U CN 213660344 U CN213660344 U CN 213660344U CN 202023252329 U CN202023252329 U CN 202023252329U CN 213660344 U CN213660344 U CN 213660344U
- Authority
- CN
- China
- Prior art keywords
- electrostatic chuck
- diameter
- wafer
- cleaning
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses a plasma processing apparatus, including a reaction chamber, the reaction chamber includes: the gas inlet device is used for conveying cleaning gas to the reaction cavity; a radio frequency power source for dissociating the cleaning gas into a cleaning plasma; a cleaning wafer having a first diameter; the electrostatic chuck is used for bearing the cleaning wafer and has a second diameter, and the difference between the first diameter and the second diameter is less than or equal to +/-0.5 mm. The utility model discloses the clean wafer that adopts and be close to mutually with electrostatic chuck 110 size covers the electrostatic chuck surface in clean step, can effectively reduce clean plasma to the harm degree of electrostatic chuck upper surface, and simultaneously, clean wafer can not lead to the fact to shelter from to the second upper surface 134 of focus ring and the gap between focus ring and the electrostatic chuck for deposit in focus ring second upper surface and the gap can effectively be clear away to clean plasma physical stamina.
Description
Technical Field
The utility model relates to a semiconductor equipment field especially relates to a plasma cleaning technology field.
Background
In the manufacturing process of semiconductor devices, plasma etching is a key process for processing a wafer into a designed pattern.
In a typical plasma etch process, a process gas (e.g., CF)4、O2Etc.) a plasma is formed in the reaction chamber under Radio Frequency (RF) excitation. The plasmas and the surface of the wafer are subjected to physical bombardment action and chemical reaction, so that the wafer with a specific structure is etched.
After the etching of the wafer is finished, the wafer is taken out through the movable manipulator, in order to ensure the uniformity of the processing of wafers in different batches, after the wafer is moved out of the reaction cavity, the reaction cavity needs to be cleaned by plasma, cleaning gas is introduced into the reaction cavity, radio frequency is applied to excite the cleaning gas into cleaning plasma, the cleaning plasma bombards the surfaces of parts in the reaction cavity exposed in the plasma under the action of an electric field, deposits possibly generated in the previous etching step are cleaned, and the cleaning gas and deposit particles are discharged out of the reaction cavity through a vacuumizing device.
As the process is developed, thicker deposits are generated on the surface of the component during a part of the etching process, and in the cleaning step, in order to ensure the cleaning effect of the deposits, a radio frequency signal with higher power needs to be applied to the electrostatic chuck.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides a plasma processing apparatus and a processing method: a plasma processing apparatus comprising a reaction chamber, the reaction chamber comprising:
the gas inlet device is used for conveying cleaning gas to the reaction cavity;
a radio frequency power source for dissociating the cleaning gas into a cleaning plasma;
a cleaning wafer having a first diameter;
the electrostatic chuck is used for bearing the cleaning wafer and has a second diameter, and the difference between the first diameter and the second diameter is less than or equal to +/-0.5 mm.
Optionally, the difference between the first diameter and the second diameter is less than ± 0.2 mm.
Optionally, the first diameter and the second diameter are the same.
Optionally, a focusing ring is arranged on the periphery of the electrostatic chuck, a first gap is arranged between the focusing ring and the electrostatic chuck, and the width of the first gap is greater than or equal to 0.2 mm.
Optionally, the focus ring includes a first upper surface and a second upper surface, the first upper surface is higher than the upper surface of the cleaning wafer, and the second upper surface is lower than or even with the lower surface of the cleaning wafer.
Optionally, the cleaning wafer exposes the first gap and the second upper surface when positioned above the electrostatic chuck.
Optionally, an insert ring is disposed below the focus ring, a second gap is disposed between the insert ring and the electrostatic chuck, and a width of the second gap is smaller than or equal to a width of the first gap.
Optionally, the lower surface of the focus ring and the upper surface of the insert ring are provided with mutually cooperating steps.
Optionally, the material of the cleaning wafer includes at least one of silicon, silicon carbide and a dielectric material.
Optionally, the electrostatic chuck includes an electrostatic adsorption layer, a base and a bonding layer connecting the electrostatic adsorption layer and the base, and a ring of protection ring is arranged around the periphery of the bonding layer.
Further, the present invention also discloses a plasma processing method, which is performed in the plasma processing apparatus described above, comprising the steps of:
after the etching process is finished, moving the etched wafer out of the reaction cavity;
moving a cleaning wafer into the reaction cavity and placing the cleaning wafer above the electrostatic chuck;
supplying a cleaning gas into the reaction chamber, and exciting the cleaning gas into a cleaning plasma by applying radio frequency power, wherein the cleaning plasma cleans the area exposed to the plasma in the reaction chamber;
and removing the cleaning wafer.
Compared with the prior art, the utility model discloses technical scheme has following beneficial effect:
the utility model discloses the clean wafer that adopts and be close mutually with the electrostatic chuck size covers the electrostatic chuck surface in clean step, can effectively reduce clean plasma to the harm degree of electrostatic chuck upper surface, and simultaneously, clean wafer can not cause to shelter from the second upper surface of focus ring and the gap between focus ring and the electrostatic chuck for deposit in focus ring second upper surface and the gap can effectively be clear away to clean plasma physical stamina. The uniformity of the plasma processing device for processing the wafer is ensured, the phenomenon of arc discharge possibly caused by deposits is reduced, and the stability of the equipment is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic view of a plasma processing apparatus;
FIG. 2 shows a close-up view of area A of FIG. 1 during an etching step;
FIG. 3 shows a close-up view of area A of FIG. 1 during a cleaning step;
fig. 4 shows a partially enlarged view of the area a after the cleaning step is finished.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Fig. 1 shows a plasma processing apparatus including a reaction chamber including an upper electrode assembly and a lower electrode assembly disposed opposite to each other, the upper electrode assembly including a gas shower head 120 for supplying a process gas or a cleaning gas into the reaction chamber and serving as an upper electrode of a vacuum reaction chamber, and an upper ground ring 122 disposed around the gas shower head. The chamber also includes a lift ring 124 that surrounds the region between the upper and lower electrode assemblies to form a uniform, stable plasma processing space. The plasma processing apparatus shown in fig. 1 is a capacitive coupling plasma processing apparatus, and the solution of the present invention is also applicable to an inductive coupling plasma processing apparatus.
The lower electrode assembly includes an electrostatic chuck 110, and the electrostatic chuck 110 includes an electrostatic adhesion layer 112, a base 116, and a bonding layer 114 connecting the electrostatic adhesion layer and the base, wherein a ring of protection ring 182 is disposed around the periphery of the bonding layer. The guard ring 182 protects the bonding layer from plasma damage and also separates the gaps between the focus ring and the insert ring and the electrostatic chuck to reduce arcing within the gaps. The electrostatic chuck is used for carrying the wafer 115 and also serves as a lower electrode of the vacuum reaction chamber, and a reaction region is formed between the upper electrode and the lower electrode. At least one radio frequency power supply 190 is applied to one of the upper electrode or the lower electrode through a matching network, a radio frequency electric field is generated between the upper electrode and the lower electrode to dissociate the reaction gas into plasma, the plasma contains a large amount of active particles such as electrons, ions, excited atoms, molecules and radicals, and the active particles can generate various physical and chemical reactions with the surface of the substrate to be processed, so that the appearance of the surface of the wafer is changed, namely, the wafer is etched. An exhaust device (not shown) is disposed below the vacuum reaction chamber for exhausting the reaction by-products from the reaction chamber to maintain a vacuum environment of the reaction chamber.
An edge ring assembly is disposed around the periphery of the electrostatic chuck 110, and specifically includes a focus ring 130, a cover ring 140 disposed around the periphery of the focus ring, and an insert ring 150 disposed below the focus ring. The focus ring 130, cover ring 140, and insert ring 150 are used to adjust the electric field or temperature distribution around the wafer to improve the uniformity of substrate processing. An isolation ring 170 is disposed below the insert ring 150, and the isolation ring 170 is disposed around the pedestal 116 for controlling the insert ring temperature while isolating the pedestal. The edge ring assembly also includes a plasma confinement ring 160 disposed around the insert ring 150 and the isolation ring 170 for forming an exhaust passage while confining plasma within the plasma processing space. The base 116 is typically a metal material and the edge ring assembly is typically a dielectric or semiconductor material, and in order to avoid thermal expansion of the base 116 and resulting extrusion of the edge ring assembly during processing, a gap 185, fig. 2, is typically provided between the electrostatic chuck and the edge ring assembly when the electrostatic chuck 110 and the edge ring assembly are installed at room temperature, and the width of the gap is typically set to be between 0.1mm and 0.5mm, depending on such factors as the material of the base and the edge ring assembly and the temperature at which the lower electrode assembly may operate.
When the wafer 115 is subjected to normal plasma processing, the wafer 115 is moved into the reaction chamber and placed above the electrostatic chuck, and is fixed and controlled in temperature under the adsorption of the electrostatic chuck, in order to achieve accurate positioning of the wafer when the wafer is placed above the electrostatic chuck, a positioning notch is disposed in an edge region of a conventional wafer, in order to prevent the positioning notch from exposing a partial region of the electrostatic chuck during etching, and thus the exposed region of the electrostatic chuck is damaged by plasma, a diameter size of the wafer 115 is generally larger than a diameter size of the electrostatic chuck 110.
Fig. 2 shows a partially enlarged view of the area a in fig. 1 during the etching step, and according to fig. 2, the focus ring 130 includes a first upper surface 132 and a second upper surface 134, when the wafer 115 is placed on the electrostatic chuck, the first upper surface 132 has a level higher than that of the upper surface of the wafer 115, and the second upper surface 134 has a level lower than or equal to that of the lower surface of the wafer 115, so that the edge area of the wafer 115 at least partially covers the second upper surface 134 of the focus ring and the gap between the focus ring and the electrostatic chuck during the etching process.
However, during the etching process, the plasma etches the topography of the wafer surface and deposits are formed on the surface of the parts exposed to the plasma, including the back surface of the wafer 115, the two upper surfaces of the focus ring 130, and the gap 185 between the focus ring and the electrostatic chuck, and the second upper surface 134 of the focus ring and the black line in the gap 185 are shown as being covered and filled by the deposits in fig. 2. After the etching process is completed, the wafer 115 is moved out of the reaction chamber by the movable manipulator, in order to ensure the etching uniformity of different wafers, a plasma cleaning step is performed in the reaction chamber after the etching process is completed each time, in the plasma cleaning step, the wafer is usually not placed on the surface of the electrostatic chuck, and the electrostatic chuck and other surfaces exposed to the plasma processing space are removed through chemical reaction or physical bombardment under the action of cleaning plasma.
As the process progresses, the utility model has found that some processes produce thicker deposits during etching, and that greater rf power is required to be applied to the lower or upper electrode assembly in order to effectively remove these deposits, which means greater plasma bombardment, which can cause more severe damage to the upper surface of the electrostatic chuck exposed to the plasma. In addition, if deposits exist in a gap between the focusing ring and the electrostatic chuck, the deposits are usually loose and are easy to generate arc discharge in the etching process, so that the side edge of the electrostatic chuck is damaged.
Fig. 3 is a partial enlarged view of the area a in fig. 1 in a cleaning step, and a plasma processing apparatus which can be applied to both a plasma etching step and a plasma cleaning step. The reaction chamber of the device comprises an air inlet device, namely the gas spray header 120 described in the foregoing, which is used for delivering cleaning gas to the reaction chamber; a radio frequency power supply 190 for dissociating the cleaning gas into a cleaning plasma; a cleaning wafer 215 having a first diameter; the electrostatic chuck 110 is used for bearing the cleaning wafer 215 and has a second diameter, and the difference between the first diameter and the second diameter is less than or equal to +/-0.5 mm. The utility model discloses the clean wafer that adopts and be close to mutually with electrostatic chuck 110 size covers the electrostatic chuck surface in clean step, can effectively reduce clean plasma to the harm degree of electrostatic chuck upper surface, and simultaneously, clean wafer can not lead to the fact to shelter from to the second upper surface 134 of focus ring and the gap between focus ring and the electrostatic chuck for deposit in focus ring second upper surface and the gap can effectively be clear away to clean plasma physical stamina. The uniformity of the plasma processing device for processing the wafer is ensured.
The utility model discloses inject first diameter and second diameter difference less than or equal to 0.5mm, when the first diameter size of clean wafer 215 is less than within 0.5mm of the second diameter size of electrostatic chuck, clean wafer 215 forms the cover to the most regional formation of upper surface of electrostatic chuck, can effectively protect the electrostatic chuck not by clean plasma bombardment damage, when the first diameter size of clean wafer 215 is greater than within 0.5mm of the second diameter size of electrostatic chuck, can avoid causing the second upper surface 134 to the focus ring and shelter from, make the second upper surface 134 of focus ring can effectively clear away the deposit.
Optionally, a difference between the first diameter and the second diameter is smaller than ± 0.2mm, so that the surface of the electrostatic chuck can be better covered while shielding of a gap between the focus ring and the electrostatic chuck is reduced. As previously known, the gap between the focus ring and the electrostatic chuck is typically set to between 0.1mm and 0.5 mm. Therefore, in order to ensure that at least part of the gap is exposed to the cleaning plasma, when the first diameter is larger than the second diameter, the difference between the first diameter and the second diameter is defined to be less than or equal to 0.2 mm. Alternatively, the diameter size of the cleaning wafer 215 may be set equal to the diameter size of the electrostatic chuck.
Fig. 4 shows a partially enlarged view of the area a after the cleaning step is finished. It can be seen from fig. 4 that, adopt the utility model discloses a behind the clean wafer 215, even if exert great radio frequency power to the reaction intracavity and clean, can not harm the electrostatic chuck surface yet, simultaneously, because the diameter size of clean wafer is close with the diameter size of electrostatic chuck, can not cover the second upper surface 134 and the gap 185 of focusing ring for the deposit in the second upper surface 134 and the gap 185 of focusing ring that clean plasma is more effective clears away, the arc discharge that has avoided the deposit to probably take place, the uniformity of wafer processing in the reaction chamber has been guaranteed.
As described above, an insert ring 150 is disposed below the focus ring 130, and a gap is also disposed between the insert ring and the electrostatic chuck, wherein the gap has a width equal to or less than that of the gap between the focus ring and the electrostatic chuck. The gap between the edge ring assembly and the electrostatic chuck is a high-power region where arc discharge is generated, and the larger the gap width is, the lower the tolerance of the rf voltage applied to the reaction chamber is, and arc discharge is easily generated, so that the gap 185 is set as small as possible on the premise of satisfying the installation requirement and bearing the expansion of the base.
Further, the lower surface of the focus ring 130 and the upper surface of the insert ring 150 may be provided with steps that are fitted to each other. The step can prevent a gap between the focusing ring and the insert ring from being communicated with the gap 185, prevent arc discharge possibly occurring in the gap 185 from penetrating into the gap between the focusing ring and the insert ring, and protect the focusing ring and the insert ring.
The utility model discloses a clean wafer 215 material can be the same with conventional wafer 115 material, optional, the material of clean wafer includes at least one of silicon, carborundum and dielectric material to do not introduce the pollution in the cleaning step and be the main consideration foundation.
The utility model discloses a plasma processing method is further disclosed, the method includes following step:
after the etching process is finished, the etched wafer 115 is moved out of the reaction chamber;
moving a cleaning wafer 215 into the reaction chamber and over the electrostatic chuck;
supplying a cleaning gas into the reaction chamber, and exciting the cleaning gas into a cleaning plasma by applying radio frequency power, wherein the cleaning plasma cleans the area exposed to the plasma in the reaction chamber;
the clean wafer 215 is removed.
Although the present invention is disclosed above, the present invention is not limited thereto. Without departure, by any person skilled in the art. Various changes and modifications can be made within the spirit and scope of the present invention, and the scope of the present invention should be limited only by the appended claims.
Claims (10)
1. A plasma processing apparatus comprising a reaction chamber, characterized in that: the reaction chamber includes:
the gas inlet device is used for conveying cleaning gas to the reaction cavity;
a radio frequency power source for dissociating the cleaning gas into a cleaning plasma;
a cleaning wafer having a first diameter;
the electrostatic chuck is used for bearing the cleaning wafer and has a second diameter, and the difference between the first diameter and the second diameter is less than or equal to +/-0.5 mm.
2. The plasma processing apparatus as claimed in claim 1, wherein: the difference between the first diameter and the second diameter is less than +/-0.2 mm.
3. The plasma processing apparatus as claimed in claim 1, wherein: the first diameter and the second diameter are the same.
4. The plasma processing apparatus as claimed in claim 1, wherein: the periphery of the electrostatic chuck is provided with a focusing ring, a first gap is arranged between the focusing ring and the electrostatic chuck, and the width of the first gap is more than or equal to 0.2 mm.
5. The plasma processing apparatus as claimed in claim 4, wherein: the focus ring includes a first upper surface and a second upper surface, the first upper surface is higher than the upper surface of the cleaning wafer, and the second upper surface is lower than or even with the lower surface of the cleaning wafer.
6. The plasma processing apparatus as claimed in claim 5, wherein: the cleaning wafer exposes the first gap and the second upper surface when positioned above the electrostatic chuck.
7. The plasma processing apparatus as claimed in claim 4, wherein: an insert ring is arranged below the focusing ring, a second gap is arranged between the insert ring and the electrostatic chuck, and the width of the second gap is smaller than or equal to that of the first gap.
8. A plasma processing apparatus as defined in claim 7, wherein: the lower surface of the focus ring and the upper surface of the insert ring are provided with mutually cooperating steps.
9. The plasma processing apparatus as claimed in claim 1, wherein: the material of the cleaning wafer comprises at least one of silicon, silicon carbide and a dielectric material.
10. The plasma processing apparatus as claimed in claim 1, wherein: the electrostatic chuck comprises an electrostatic adsorption layer, a base and a bonding layer connected with the electrostatic adsorption layer and the base, wherein a circle of protection ring is arranged around the periphery of the bonding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023252329.7U CN213660344U (en) | 2020-12-29 | 2020-12-29 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023252329.7U CN213660344U (en) | 2020-12-29 | 2020-12-29 | Plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213660344U true CN213660344U (en) | 2021-07-09 |
Family
ID=76690604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023252329.7U Active CN213660344U (en) | 2020-12-29 | 2020-12-29 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213660344U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113909220A (en) * | 2021-09-08 | 2022-01-11 | 联芯集成电路制造(厦门)有限公司 | Substrate processing method |
-
2020
- 2020-12-29 CN CN202023252329.7U patent/CN213660344U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113909220A (en) * | 2021-09-08 | 2022-01-11 | 联芯集成电路制造(厦门)有限公司 | Substrate processing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5179730B2 (en) | Plasma etching equipment | |
| KR101265827B1 (en) | Apparatus and methods to remove films on bevel edge and backside of wafer | |
| US20150170879A1 (en) | Semiconductor system assemblies and methods of operation | |
| US7105102B2 (en) | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same | |
| EP1269529B1 (en) | Method for improving uniformity and reducing etch rate variation of etching polysilicon | |
| CN101557885A (en) | Plasma processing reactor with multiple capacitive and inductive power sources | |
| US20110011534A1 (en) | Apparatus for adjusting an edge ring potential during substrate processing | |
| JP2007043149A5 (en) | ||
| WO2009079285A1 (en) | Silicon carbide focus ring for plasma etching system | |
| JP2007524993A (en) | A barrier layer for a processing member and a method of forming the same. | |
| CN214279906U (en) | Cleaning wafer and plasma processing device | |
| KR100782621B1 (en) | Plasma processing method and plasma processing device | |
| CN213660344U (en) | Plasma processing device | |
| US6545245B2 (en) | Method for dry cleaning metal etching chamber | |
| JP2797307B2 (en) | Plasma process equipment | |
| TWI837534B (en) | Plasma processing device and processing method | |
| TWI810825B (en) | A cleaning wafer, plasma processing device and processing method | |
| CN114695046A (en) | Plasma processing device and processing method | |
| US20060281323A1 (en) | Method of cleaning substrate processing apparatus | |
| CN111081517B (en) | Anti-corrosion method of electrostatic chuck | |
| KR20210044074A (en) | Electro-static chuck and system for treating substrate with the electro-static chuck, and method for manufacturing electro-static chuck | |
| KR100667675B1 (en) | Atmospheric pressure plasma apparatus used in etching of an substrate | |
| KR101362815B1 (en) | Method for plasma-treatment | |
| KR20050001831A (en) | Plasma processing apparatus | |
| JP2005064062A (en) | Device and method for plasma treatment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |