TW202117797A - Plasma isolation ring, plasma processing device and substrate processing method being suitable for multi-process requirements without having to open the reaction chamber to replace the isolation ring - Google Patents

Abstract

The invention discloses a plasma isolation ring, a plasma processing device and a substrate processing method suitable for multi-process requirements. The plasma isolation ring includes: a lower isolation ring made of a first conductivity material and with a first wall in a ring shape; an upper isolation ring made of a second conductivity material, fixed with the lower isolation ring and having a second wall in a ring shape. The plasma isolation ring moves in the plasma processing device to confine the plasma in the corresponding wall of one of the lower isolation ring and the upper isolation ring. When the plasma processing device suitable for the plasma isolation ring performs different process treatments on the substrate, it needs only to move the isolation ring made of materials with different conductivity to meet the requirements of different etching processes without having to open the reaction chamber to replace the isolation ring.

Description

Plasma isolation ring, plasma processing device and substrate processing method

The invention relates to the technical field of plasma etching, in particular to a plasma isolation ring, a plasma processing device and a substrate processing method suitable for multi-process requirements.

In the plasma etching equipment, the plasma isolation ring is used to isolate the plasma and protect the inner wall of the reaction chamber. According to different substrate processing requirements, sometimes it is necessary to implement a process where the central area of the substrate is relatively strong and the edge area is relatively weakly etched, and sometimes it is necessary to implement a process to strengthen the etching of the edge area of the substrate.

In the prior art, plasma isolation rings made of different materials are usually designed, and plasma isolation rings made of corresponding materials are selected when different manufacturing processes are required. However, when doing different processes in the same chamber, it is necessary to open the reaction chamber to replace the plasma isolation ring, which will inevitably destroy the vacuum environment in the reaction chamber, although the reaction chamber can be cleaned and vacuumed again. , But wasted time cost and labor cost.

Therefore, there is a great need for a solution that can realize different process treatments on the substrate without damaging the vacuum environment in the reaction chamber.

In view of this, the present invention provides a plasma isolation ring, which effectively solves the problems existing in the conventional technology, so that the plasma processing device can achieve the purpose of processing the substrate in different processes without damaging the vacuum environment in the reaction chamber.

In order to achieve the above-mentioned object, the present invention provides a plasma isolation ring for a plasma processing device. The plasma isolation ring includes a lower isolation ring made of a material with a first conductivity and a first wall having a ring shape. The upper isolation ring made of the second conductivity material is fixed with the lower isolation ring and has a second annular wall; wherein the plasma isolation ring moves in the plasma processing device to confine the plasma Inside the corresponding wall of one of the lower isolation ring and the upper isolation ring.

Preferably, the substrate includes a central area and an edge area, one of the first conductivity material and the second conductivity material is an insulating material, and the other is a conductive material, and the insulating material is made of The isolation ring is used to achieve a process of relatively strong etching in the center area of the substrate and relatively weak etching in the edge area; the isolation ring made of conductive material is used to achieve a process of enhancing the etching performance of the edge area of the substrate.

Preferably, the lower isolation ring is made of insulating material and the upper isolation ring is made of conductive material, or the lower isolation ring is made of conductive material and the upper isolation ring is made of insulating material.

Preferably, the conductive material is a metal conductor or a semiconductor material.

Preferably, the conductive material is aluminum alloy.

Preferably, the insulating material is quartz or ceramic.

Preferably, the conductive material is grounded.

Preferably, the lower isolation ring and the upper isolation ring are riveted and fixed by screws.

The present invention also provides a plasma processing device, including: a reaction chamber surrounded by a plurality of walls; a susceptor arranged in the reaction chamber for fixing a substrate with a central area and an edge area; and arranged in the reaction chamber The gas shower head is used to introduce gas into the reaction chamber, and the plasma processing area is between the gas shower head and the susceptor; a plasma isolation ring is arranged around the gas shower head, the The plasma isolation ring has the characteristics as described above; the driving device is used to provide a driving force for the movement of the plasma isolation ring to guide the upper isolation ring and the lower isolation ring of the plasma isolation ring to switch positions. The corresponding wall of the person surrounds the plasma treatment area.

Preferably, the driving device is used to drive the plasma isolation ring to switch between the initial station, the first station and the second station.

Preferably, the initial station is such that the upper isolation ring and the lower isolation ring are both located above the base to provide a space for the transfer of the substrate.

Preferably, in the first station, the upper isolation ring surrounds the circumferential side of the gas shower head, and the first wall of the lower isolation ring surrounds the plasma treatment area.

Preferably, in the second station, the second wall of the upper isolation ring surrounds the plasma treatment area, and the lower isolation ring surrounds the peripheral side of the base.

Preferably, the upper isolation ring is made of conductive material, and the lower isolation ring is made of insulating material.

Preferably, the upper isolation ring is made of insulating material, and the lower isolation ring is made of conductive material.

Preferably, the isolation ring made of insulating material is used to achieve a relatively strong etching process in the center area of the substrate and relatively weak etching in the edge area; the isolation ring made of conductive material is used to achieve a reinforced base The process of etching performance in the edge area of the wafer.

Preferably, the plasma processing device further includes a plasma confinement ring surrounding the susceptor, and the inner surface of the side wall of the first wall of the lower isolation ring has a larger diameter than the side wall of the outer ring portion of the plasma confinement ring The diameter of the outer surface is such that when the plasma isolation ring is switched between the first station and the second station and between the two stations, the inner surface of the side wall of the first wall of the lower isolation ring is close to the plasma confinement ring The outer surface of the side wall of the outer ring portion.

Preferably, the plasma processing device further includes a plasma confinement ring surrounding the susceptor, and the smallest inner diameter size of the lower isolation ring is larger than the inner diameter size of the plasma confinement ring.

Preferably, the driving device is an air cylinder or an electric cylinder or a motor.

The present invention also provides a substrate processing method, including: providing the plasma processing device as described above; making one of the upper isolation ring and the lower isolation ring made of insulating material, and the other made of conductive material. The plasma isolation ring driven by the driving device is located at the initial station above the base; the substrate is transferred from the channel opened in the reaction chamber to the base; the driving device is driven to surround the wall of the isolation ring made of insulating material The substrate also constrains the plasma treatment area in the area surrounded by the wall to achieve a relatively strong etching process in the center area of the substrate and relatively weak etching in the edge area of the substrate; or the driving device is driven by a conductive material The wall of the manufactured isolation ring surrounds the substrate and constrains the plasma treatment area in the area surrounded by the wall to realize the process of enhancing the etching performance of the edge area of the substrate.

Preferably, the upper isolation ring is made of a conductive material, and the lower isolation ring is made of an insulating material. When a relatively strong etching in the center area of the substrate and a relatively weak etching in the edge area of the substrate are required, , The lower isolation ring is driven to surround the plasma processing area; when the process of enhancing the etching performance of the edge area of the substrate is required, the upper isolation ring is driven to surround the plasma processing area.

Preferably, the upper isolation ring is made of an insulating material, and the lower isolation ring is made of a conductive material. When a relatively strong etching in the center area of the substrate and a relatively weak etching in the edge area of the substrate are required, , The upper isolation ring is driven to surround the plasma processing area; when the process of enhancing the etching performance of the edge area of the substrate is required, the lower isolation ring is driven to surround the plasma processing area.

Compared with the conventional technology, the technical solution provided by the present invention has at least the following advantages: the plasma isolation ring provided by the present invention is composed of an upper isolation ring and a lower isolation ring, and the two isolation rings are made of materials with different electrical conductivity. Different conductive materials have different electromagnetic field shielding effects, and realize different electromagnetic field intensity distributions at the edge area of the substrate, resulting in a difference in plasma concentration at the edge of the substrate, so as to realize different kinds of substrate processing processes. During use, it is only necessary to select the isolation ring made of the corresponding conductivity material to define the plasma treatment area to achieve the corresponding process to etch the substrate, without opening the reaction chamber to replace the isolation ring, which saves time and effort.

In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the technical field without making progressive work shall fall within the protection scope of the present invention.

Figures 1 to 3 all describe a capacitively coupled plasma processing device. The plasma processing apparatus includes a reaction chamber 1 surrounded by a plurality of walls. The walls surrounding the reaction chamber 1 are grounded. The reaction chamber 1 is provided with a susceptor for fixing the substrate 2, a gas shower head 3 for introducing etching gas into the reaction chamber 1, a plasma isolation ring 4 arranged around the gas shower head 3, and a It is a driving device 5 that provides driving force for the movement of the plasma isolation ring 4. Generally, the base 2 can be used as the lower electrode, and the gas shower head 3 can be used as the upper electrode. Between the gas shower head 3 and the susceptor 2 is a plasma processing area. A radio frequency power (not shown) is applied to the susceptor 2 to dissociate the etching gas in the plasma processing area into plasma and free radicals, which can etch the substrate into a predetermined pattern . The etching byproducts produced by the etching and the etching gas that will participate in the reaction in the future will be pumped out of the reaction chamber by a pump (not shown).

An electrostatic chuck 21 is provided on the base 2 for supporting and fixing the substrate, and the substrate includes a central area and an edge area.

The plasma isolation ring 4 includes a lower isolation ring 41 made of a first conductivity material and an upper isolation ring 42 made of a second conductivity material. The lower isolation ring 41 has a ring-shaped first wall body and the upper isolation ring 42 has a ring-shaped second wall body, and the two isolation rings are fixed by screw riveting or the like. The plasma isolation ring 4 is driven by the driving device 5 to move in the plasma processing device and switch positions, so as to confine the plasma in the corresponding wall of one of the lower isolation ring 41 and the upper isolation ring 42. The vertical cross section of each isolation ring is in an inverted L shape to match the L-shaped outer ring portion 62 of the plasma confinement ring 6 during the substrate etching process to prevent the plasma from spreading to the walls of the reaction chamber 1. An undesirable phenomenon of corrosion has occurred.

The driving device 5 is one of a cylinder, an electric cylinder, or a motor. The driving device 5 guides the plasma isolation ring 4 to move within the plasma processing apparatus by driving the shaft bracket 7 provided on the reaction chamber 1, so as to switch the plasma isolation ring 4 to the initial position as required by the substrate processing process. The first station or the second station. The end of the shaft frame 7 extending into the reaction chamber 1 is connected to the plasma isolation ring 4, and the part of the shaft frame 7 extending out of the reaction chamber 1 is connected to the driving device 5. The driving device 5 drives the shaft frame 7 up and down to drive the plasma isolation ring 4 to move and change different stations in the reaction chamber to achieve the purpose of transferring the substrate or confining the plasma to etch the substrate. .

FIG. 1 shows the plasma processing device in which the driving device drives the plasma isolation ring 4 at the initial station. In the initial station state, the upper isolation ring 42 and the lower isolation ring 41 of the plasma isolation ring 4 are both located above the susceptor 2. At this time, the substrate can be removed from the plasma processing device by a robot (not shown). The opening provided on the side wall is conveyed to the base 2 and is supported and fixed by the electrostatic chuck 21.

FIG. 2 shows the plasma processing device in which the driving device drives the plasma isolation ring 4 at the first station. In the first station state, the upper isolating ring 42 surrounds the circumferential side of the gas shower head 3; the first wall of the lower isolating ring 41 is moved to surround the substrate and restrict the plasma processing area to the wall In the body, the substrate is etched in the first process.

FIG. 3 shows the plasma processing device in which the driving device drives the plasma isolation ring 4 at the second station. In the second station state, the second wall of the upper isolation ring 42 is moved to surround the substrate and confine the plasma treatment area within the wall to perform the second process to etch the substrate; the lower isolation ring 41 surrounds the circumference of the base. The smallest inner diameter size of each isolation ring of the plasma isolation ring 4 is greater than the inner diameter size of the plasma confinement ring 6, that is, when the plasma isolation ring 4 is lowered to the second station, the innermost sidewall surface of the lower isolation ring 41 is not The plasma confinement ring directly abuts to the susceptor, so that the etching by-products produced by the etching and the etching gas that will participate in the reaction in the future can reach the lateral distance between the lower isolation ring 41 and the susceptor 2 The generated spacing space flows into the plasma confinement ring 6, and the by-product gas and the gas that will participate in the reaction in the future are discharged from the plasma processing area through the plasma confinement ring 6. The lower isolation ring 41 does not restrict the by-products and gases The normal discharge.

In this case, the upper isolation ring and the lower isolation ring of the plasma isolation ring 4 shown in Figures 1 to 3 are made of materials with different electrical conductivity to form different electric field distributions in the plasma treatment area to achieve different processes. Processing. In one embodiment, the lower isolation ring 41 is made of an insulating material, that is, the first conductivity material is an insulating material, preferably quartz or ceramic; the upper isolation ring 42 is made of a conductive material, that is, the second conductivity material is The conductive material, the conductive material is a metal conductor or a semiconductor material, preferably an aluminum alloy. Since the isolation ring made of different materials has different electric field distributions in the plasma treatment area, the plasma treatment area has a different plasma distribution. When the etching effect of the edge area and the center area on the substrate needs to be adjusted An isolation ring of a suitable material can be selected to constrain the plasma treatment area. The following describes the difference between the achievable manufacturing process of the lower isolation ring 41 made of insulating material and the upper isolation ring 42 made of conductive material.

In the plasma processing device, in order to generate plasma, a radio frequency power source (not shown in the figure) is usually applied to the reaction chamber, and the radio frequency power source forms a radio frequency electric field between the upper electrode and the lower electrode in the plasma processing device. When the lower isolation ring 41 made of insulating material is used to define the plasma processing area (ie at the first station in FIG. 2), since the isolation ring has a certain thickness, it is equivalent to the path through which the electric field is transmitted to the sidewall of the reaction chamber. Two capacitors in series are added, namely the capacitance of the insulating isolation ring itself and the capacitance between the insulating isolation ring and the side wall of the reaction chamber; when the isolation ring is made of conductive material, there is no capacitance problem with the conductor material, so the electric field transmission path There is only the capacitance between the conductive isolation ring and the side wall of the reaction chamber. Because the capacitance becomes smaller after the two capacitors are connected in series, the smaller the capacitance, the smaller the current through the radio frequency electric field. Therefore, when the isolation ring is made of insulating material, it reaches the side wall of the reaction chamber. The radio frequency electric field is less distributed, and the amount of plasma generated by dissociation around the side wall of the reaction chamber is less. When the isolation ring is made of conductive material, the radio frequency electric field near the side wall of the reaction chamber is more distributed, and the amount of plasma generated by dissociation is more. Under the premise that the total plasma amount in the reaction area remains unchanged, the plasma in the central area of the isolation ring The concentration is higher than the plasma concentration in the central region of the isolation ring of conductive material. As a result, the plasma concentration in the reaction chamber presents different distribution curves. When the substrate is subjected to plasma processing with different requirements, the isolation ring of the required material can be selected to surround the reaction area according to the required plasma concentration distribution.

Specifically, as shown in Figure 4, when the isolation ring surrounding the reaction area is made of insulating material, the obtained plasma concentration distribution curve in the reaction area is as shown in curve a. When the isolation ring surrounding the reaction area is made of conductive material, the result is The plasma concentration distribution curve in the reaction zone is shown in curve b.

When etching the substrate, the plasma concentration at the edge area of curve a is lower than that of curve b. At the same time, the plasma concentration at the center area of curve a is higher than that of curve b. In some manufacturing processes, it is necessary to improve the etching performance of the edge area of the substrate. At this time, it is better to use the upper isolation ring 42 made of conductive material to define the plasma treatment area (ie, the second station in FIG. 3), and the conductive material The made upper isolation ring 42 is grounded, so that the plasma concentration at the edge of the substrate increases (refer to the line segment b in Figure 4). When the substrate is etched, the etching at the edge of the substrate is still weaker than the center of the substrate. However, compared to the process that can be achieved by using the lower isolation ring 41 made of insulating material, when the upper isolation ring 42 made of conductive material is used, the etching effect at the edge area of the substrate is obvious strengthen.

The plasma processing apparatus of the present invention further includes a plasma confinement ring 6 surrounding the susceptor 2. The plasma confinement ring 6 includes an inner ring portion 61 having an annular shape and an outer ring portion 62 having an L-shaped vertical cross section surrounding the inner ring portion 61. The inner ring portion 61 is provided with a confinement channel in the thickness direction, and the height of the confinement channel is greater than the mean free path of the plasma, so that during the etching process of the substrate at the first station and the second station, the confinement channel It can effectively prevent the plasma from diffusing outward from the plasma confinement ring 6 to corrode the walls of the reaction chamber 1. The diameter of the inner surface of the side wall of the first wall body of the lower isolation ring 41 of the plasma isolation ring 4 is greater than the diameter of the outer surface of the side wall of the outer ring portion 62 of the plasma confinement ring 6 so that the plasma isolation ring 4 is in the first station. In the process of switching between the second station and the two stations, the inner surface of the first wall of the lower isolation ring 41 does not rub against the outer surface of the outer ring 62 of the plasma confinement ring 6, so as to reduce particulate pollutants At the same time, the steps provided on the lower isolation ring are matched with the upper surface of the side wall of the outer ring 62 to prevent the plasma from diffusing into the cavity and corroding the inner wall of the cavity during the process of etching the substrate. . Compared with the traditional plasma processing device, although two isolation rings made of different materials are used for superimposition processing in the present invention, there is no need to change the structural features of the plasma confinement ring 6, but it can move downward in the up and down direction. The plasma confinement ring 6 is a certain distance to leave space for the lower isolation ring 41 or to thin the plasma confinement ring 6 in the up and down direction, which does not affect any process effects to be achieved by the present invention nor does it affect the plasma confinement Ring 6 is what it should achieve.

The plasma processing device of the present invention also includes a bellows 8 connected to the upper wall of the reaction chamber 1 at one end and connected to the shaft frame 7 at the other end. The bellows 8 has elasticity to move up and down synchronously when the shaft frame 7 is driven to rise and fall. The bellows 8 seals the gap formed by the lifting between the shaft frame 7 and the upper wall of the reaction chamber 1 to prevent external air from entering the reaction chamber 1.

The following describes the processing method of the substrate in the plasma processing apparatus of the present invention.

Please refer to FIG. 1, the driving device 5 is not in driving operation, and the plasma isolation ring 4 is located at the initial station above the base 2. At this time, a robot can be used to remove the substrate from the channel opened on the side wall of the reaction chamber 1 It is transferred to the base 2 and is supported and fixed by the electrostatic chuck 21.

Please refer to FIG. 2, if it is necessary to achieve a relatively strong etching process in the center area of the substrate and relatively weak etching in the edge area of the substrate (first process etching), the driving device 5 performs the driving operation. The plasma isolation ring 4 is moved down to the first station through the pedestal 7, when the first wall of the lower isolation ring 41 made of insulating material is guided down to surround the substrate and confine the plasma processing area In the area surrounded by the first wall, the first process to etch the substrate can be completed.

Please refer to FIG. 3, if the process effect of enhancing the etching performance of the edge area of the substrate is required (second process etching), the driving device 5 performs the driving operation, and the plasma isolation ring 4 is moved and lowered through the pedestal 7 To the second station, the second wall of the upper isolation ring 42 made of conductive material and grounded at this time is guided down to surround the substrate and confine the plasma treatment area to the area surrounded by the second wall Inside, the second process etching substrate can be completed.

Of course, in other embodiments, the isolating ring made of insulating material in the present invention can be used as the upper isolating ring; the isolating ring made of conductive material in the present invention is used as the lower isolating ring, and at the same time as the lower isolating ring. Grounding treatment. The same as the above-mentioned effect of different materials on the performance of the electric field mask, if you want to achieve a relatively strong etching process in the center area of the substrate and relatively weak etching in the edge area of the substrate (first process etching), you only need to use an insulating material The manufactured upper isolation ring is driven to surround the plasma treatment area; to achieve the above-mentioned process effect of enhancing the etching performance of the edge area of the substrate (second process etching), only the lower isolation ring made of conductive material needs to be driven To surround the plasma treatment area.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will be obvious to those with ordinary knowledge in the technical field after reading the above content. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.

1: Reaction chamber 2: pedestal 21: base electric chuck 3: Gas shower head 4: Plasma isolation ring 41: Lower isolation ring 42: Upper isolation ring 5: Drive device 6: Plasma confinement ring 61: Inner Ring 62: Outer Ring 7: pedestal 8: bellows

In order to explain the technical solutions of the embodiments of the present invention more clearly, the following will briefly introduce the drawings used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. Those with ordinary knowledge in the technical field can also obtain other drawings based on these drawings without making progressive work. Figure 1 discloses a plasma processing device with a plasma isolation ring at the initial station; Figure 2 discloses a plasma processing device with a plasma isolation ring at the first station; Figure 3 discloses a plasma processing device with a plasma isolation ring at the second station; Fig. 4 discloses a graph of plasma concentration distribution from the center of the substrate to both sides at the first station and the second station.

1: Reaction chamber

2: pedestal

21: base electric chuck

3: Gas shower head

4: Plasma isolation ring

41: Lower isolation ring

42: Upper isolation ring

5: Drive device

6: Plasma confinement ring

61: Inner Ring

62: Outer Ring

7: pedestal

8: bellows

Claims (22)

A plasma isolation ring for a plasma processing device, wherein the plasma isolation ring includes: A lower isolation ring made of a material with a first conductivity has a first wall in a ring shape; An upper isolating ring made of a material with a second conductivity, fixed to the lower isolating ring and having a second wall in a ring shape; Wherein, the plasma isolation ring moves in a plasma processing device to confine a plasma in the corresponding wall of one of the lower isolation ring and the upper isolation ring. The plasma isolation ring according to claim 1, wherein: a substrate includes a central area and an edge area, one of the first conductive material and the second conductive material is an insulating material, and the other It is a conductive material, and the isolation ring made of the insulating material is used to achieve a relatively strong etching process in the central area of the substrate and relatively weak etching in the edge area; the isolation ring made of the conductive material is used To realize the process of enhancing the etching performance of the edge region of the substrate. The plasma isolation ring according to claim 2, wherein: the lower isolation ring is made of the insulating material and the upper isolation ring is made of the conductive material, or the lower isolation ring is made of the conductive material and the upper isolation ring is made of the conductive material. The isolation ring is made of this insulating material. The plasma isolation ring according to claim 2 or 3, wherein: the conductive material is a metal conductor or a semiconductor material. The plasma isolation ring according to claim 4, wherein: the conductive material is aluminum alloy. The plasma isolation ring according to claim 2 or 3, wherein: the insulating material is quartz or ceramic. The plasma isolation ring according to claim 2 or 3, wherein: the conductive material is grounded. The plasma isolation ring according to claim 1, wherein: the lower isolation ring and the upper isolation ring are riveted and fixed by screws. A plasma processing device includes: A reaction chamber surrounded by a plurality of walls; A base set in the reaction chamber is used to fix a substrate with a central area and an edge area; A gas shower head arranged in the reaction chamber is used to introduce gas into the reaction chamber, and a plasma processing area is formed between the gas shower head and the susceptor; A plasma isolation ring is arranged around the gas shower head, and the plasma isolation ring has the characteristics described in claim 1; A driving device for providing driving force for the movement of the plasma isolation ring to guide the switching positions of the upper isolation ring and the lower isolation ring of the plasma isolation ring so that the corresponding wall of one of them surrounds the plasma isolation ring Plasma treatment area. The plasma processing apparatus according to claim 9, wherein: the driving device is used to drive the plasma isolation ring to switch between an initial station, a first station, and a second station. The plasma processing apparatus according to claim 10, wherein: the initial station is such that the upper isolation ring and the lower isolation ring are both located above the susceptor, so as to provide a space for the transfer of the substrate. The plasma processing apparatus according to claim 10, wherein: the first station is such that the upper isolation ring surrounds the circumferential side of the gas shower head, and the first wall of the lower isolation ring surrounds the plasma体处理区。 Body processing area. The plasma processing apparatus according to claim 10, wherein: the second station is such that the second wall of the upper isolation ring surrounds the plasma processing area, and the lower isolation ring surrounds the circumference of the base side. The plasma processing apparatus according to claim 9, wherein: the upper isolation ring is made of conductive material, and the lower isolation ring is made of insulating material. The plasma processing apparatus according to claim 9, wherein: the upper isolation ring is made of insulating material, and the lower isolation ring is made of conductive material. The plasma processing apparatus according to claim 14 or 15, wherein: the isolation ring made of the insulating material is used to implement a process in which the central area of the substrate is relatively etched and the edge area is relatively weakly etched The isolation ring made of the conductive material is used to realize the process of enhancing the etching performance of the edge region of the substrate. The plasma processing device according to claim 9, wherein: the plasma processing device further comprises a plasma confinement ring surrounding the base, and the inner surface of the side wall of the first wall of the lower isolation ring has a larger diameter than the The diameter of the outer surface of the side wall of the outer ring portion of the plasma confinement ring is such that the plasma isolation ring is switched between a first station and a second station, and the first station and the second station are switched between the The inner surface of the side wall of the first wall body of the lower isolation ring is close to the outer surface of the side wall of the outer ring portion of the plasma confinement ring. The plasma processing apparatus according to claim 9, wherein: the plasma processing apparatus further includes the plasma confinement ring surrounding the base, and the smallest inner diameter of the lower isolation ring is larger than the inner diameter of the plasma confinement ring Diameter size. The plasma processing device according to claim 9, wherein: the driving device is an air cylinder, an electric cylinder, or a motor. A substrate processing method, including: Provide a plasma processing device as described in claim 9; One of the upper isolation ring and the lower isolation ring is made of an insulating material, and the other is made of a conductive material. Enabling the plasma isolation ring driven by the driving device to be located at an initial station above the base; Allowing the substrate to be transferred from the channel opened in the reaction chamber to the base; The driving device is made to drive the wall of the isolation ring made of the insulating material to surround the substrate and constrain the plasma treatment area in the area surrounded by the wall of the isolation ring to realize the etching of the central area of the substrate. A process in which the edge area of the substrate is relatively strong and the etching is relatively weak; or the driving device drives the wall of the isolation ring made of the conductive material to surround the substrate and constrain the plasma processing area in the isolation ring In the area surrounded by the wall body, the process of enhancing the etching performance of the edge area of the substrate is realized. The substrate processing method according to claim 20, wherein: the upper isolation ring is made of the conductive material, the lower isolation ring is made of the insulating material, and the central area of the substrate needs to be etched relatively strongly When the edge region of the substrate is relatively weakly etched, the lower isolation ring is driven to surround the plasma treatment region; when a process that enhances the etching performance of the edge region of the substrate is required, the upper The isolation ring is driven to surround the plasma processing area. The substrate processing method according to claim 20, wherein: the upper isolation ring is made of the insulating material, the lower isolation ring is made of the conductive material, and the central area of the substrate needs to be etched relatively strongly When the edge region of the substrate is relatively weakly etched, the upper isolation ring is driven to surround the plasma treatment region; when a process that enhances the etching performance of the edge region of the substrate is required, The lower isolation ring is driven to surround the plasma processing area.

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