TW202127502A - Plasma etching equipment capable of adjusting plasma volume and having simple structure and easy to operate - Google Patents

Abstract

The invention provides a plasma etching equipment, which comprises: electrode members including a first electrode and a second electrode, wherein a gap exists between the two; a plasma confinement ring on which the upper surface has a setting space with a height less than the upper surface of the second electrode; movable ring members; a driving mechanism, which can change the spatial configuration of the movable ring members to make the movable ring members being in the first configuration exposing the gap to place a wafer to be etched on the upper surface of the second electrode or make the movable ring members in the second configuration to seal the circumference of the gap and separate the gap from the setting space to form a first plasma distribution space, or further make the movable ring members in the third configuration to seal the circumference of the gap and communicate the gap with the setting space to form a second plasma distribution space. The plasma etching equipment according to the invention may realize the adjustment of plasma volume and has a simple structure and is easy to operate.

Description

Plasma etching equipment

The present invention relates to the technical field of semiconductor manufacturing, in particular to a plasma etching equipment.

With the continuous improvement of the integration of semiconductor devices, the line width of semiconductor devices is getting smaller and smaller, the control of key dimensions is becoming more and more important, and the requirements for the etching process are getting higher and higher. The etching process is a process for selectively removing the material formed on the surface of the silicon substrate or selectively removing the material of the silicon substrate. The etching process includes wet etching and dry etching. Dry etching has become one of the most commonly used etching processes due to high selectivity and strong controllability. Dry etching is plasma etching. Generally, an etching gas is introduced into a plasma processing device, and the etching gas is ionized to form a plasma, and the plasma is used to etch the wafer to be etched.

Existing plasma processing devices include capacitive coupled plasma etching equipment (Capacitor Coupled Plasma, CCP) and inductive coupled plasma etching equipment (Inductive Coupled Plasma, ICP). For CCP, in processes with different CCP etching rates, the wafers need to be etched in different plasma volumes to improve the edge etching rate of the wafers. In order to meet the plasma volume requirements of different processes, the existing plasma etching equipment needs to be realized by moving rings of different shapes, that is, it needs to be shut down and disassembled to replace the moving rings of different shapes. The operation is complicated and inconvenient to use.

In view of this, the present invention provides a plasma etching equipment, which realizes the adjustment of the plasma volume without shutting down to replace the moving ring assembly, and has a simple structure and easy operation.

To achieve the foregoing objective, the embodiments of the present invention provide the following technical solutions:

A plasma etching equipment, which includes: an electrode assembly, the electrode assembly includes a first electrode and a second electrode disposed oppositely, the first electrode is located above the second electrode, and the two have a gap; a plasma confinement ring, The plasma confinement ring surrounds the second electrode, and its upper surface has a setting space whose height is smaller than the upper surface of the second electrode; a movable movable ring assembly, which is located above the plasma confinement ring and surrounds the electrode assembly; driving mechanism , The driving mechanism can change the spatial form of the moving ring assembly, so that the moving ring assembly is in the first form, exposing the gap, so that the wafer to be etched can be placed on the upper surface of the second electrode, or the moving ring assembly is in the second form, sealing the gap And separate the gap and the setting space to form a first plasma distribution space, or make the moving ring assembly in a third form, seal the circumference of the gap, and connect the gap and the setting space to form a second plasma distribution space , The second plasma distribution space is larger than the volume of the first plasma distribution space.

Preferably, in the plasma etching equipment described above, the moving ring assembly includes: a first moving ring and a second moving ring; both the first moving ring and the second moving ring surround the electrode assembly, and both are located in the plasma confinement Above the ring. Wherein, the first moving ring is used to seal or release the circumference of the gap, and the second moving ring is used to seal or release the setting space.

Preferably, in the above-mentioned plasma etching equipment, if it is in the first form, the first moving ring and the second moving ring are both located above the gap to expose the gap.

If it is in the second form, the second moving ring seals and covers the opening of the setting space, and the first moving ring seals the circumference of the gap to form a first plasma distribution space.

If it is in the third form, the first moving ring seals the circumference of the gap, and the gap is connected to the setting space to form a second plasma distribution space. The second moving ring is located in the second plasma distribution space and above the opening of the setting space. Separate from the opening of the setting space.

Preferably, in the plasma etching equipment described above, the first moving ring includes a top and side walls, the top of the first moving ring is disposed opposite to the plasma confinement ring, and the side wall of the first moving ring is opposite to the outer side wall of the setting space. set up. In addition, the second moving ring is arranged opposite to the opening of the setting space, and it is located below the top of the first moving ring and in the area enclosed by the side wall of the first moving ring.

Preferably, in the above plasma etching equipment, the top of the first moving ring is connected to the driving mechanism through the first connecting rod, and the driving mechanism drives the first moving ring to move in the first direction through the first connecting rod. The second moving ring is connected with the driving mechanism through the second connecting rod, and the driving mechanism drives the second moving ring to move in the first direction through the second connecting rod. Wherein, the second connecting rod is connected with the driving mechanism through a through hole penetrating the first moving ring. In addition, the first direction is a direction in which the first electrode and the second electrode face each other.

Preferably, in the above-mentioned plasma etching equipment, a supporting member is fixed on the side wall of the first electrode. Wherein, a first corrugated tube connected to the first connecting rod is fixed above the supporting member, and a second corrugated tube connected to the second connecting rod is fixed above the supporting member.

Preferably, in the above-mentioned plasma etching equipment, the driving mechanism includes: a first piston cylinder arranged on the first electrode, a first connecting plate is fixed above the first piston cylinder; and a first connecting plate arranged on the first connection A second piston cylinder above the plate, and a second connecting plate is fixed above the second piston cylinder. Among them, the first piston cylinder drives the first connecting plate to drive the first moving ring to move, and drives the upper second piston cylinder and the second connecting plate to drive the second moving ring to move. In addition, the second piston cylinder drives the second connecting plate to drive the second moving ring to move.

Preferably, in the above plasma etching equipment, the first moving ring is made of quartz material, ceramic material, or Teflon material; the second moving ring is made of quartz material, ceramic material, or Teflon material.

Preferably, in the above-mentioned plasma etching equipment, it further comprises: an insulating ring arranged between the second electrode and the plasma confinement ring.

Preferably, in the above plasma etching equipment, the insulating ring is made of quartz material, ceramic material, or Teflon material.

According to the above description, in the plasma etching equipment provided by the embodiment of the present invention, when plasma etching is performed, the spatial form of the moving ring assembly can be changed by adjusting the driving mechanism, so that the moving ring assembly is in the first form and exposed The gap is convenient for placing the wafer to be etched on the upper surface of the electrode assembly. Alternatively, the movable ring assembly is in the second form, the circumference of the gap is sealed, and the gap and the set space are isolated to form the first plasma distribution space. Or, the movable ring assembly is in the third form, the circumference of the gap is sealed, and the gap and the set space are connected to form a second plasma distribution space. Wherein, the second plasma distribution space is larger than the volume of the first plasma distribution space. By applying the plasma etching equipment provided by the embodiments of the present invention, the plasma volume can be adjusted without shutting down to replace the moving ring assembly, and its structure is simple and easy to operate.

The following will clearly and completely describe the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person with ordinary knowledge in the field without creative work shall fall within the protection scope of the present invention.

As explained in the prior art, in order to meet the plasma volume requirements of different processes, the existing plasma etching equipment needs to be realized by moving rings of different shapes, that is, it needs to be shut down and disassembled to replace moving rings of different shapes, and the operation is complicated. Not easy to use.

Referring to FIG. 1, FIG. 1 is a schematic structural diagram of a conventional plasma etching equipment. As shown in FIG. 1, the plasma etching equipment has a first electrode 11 and a second electrode 12 opposite to each other. The first electrode 11 is located above the second electrode 12 with a gap 10 between them. A plasma confinement ring 13 is arranged around the second electrode 12, and the plasma confinement ring 13 has a setting space. The plasma confinement ring 13 is provided with an exhaust channel, and the exhaust channel is set to have a certain aspect ratio. When colliding with the side wall of the exhaust channel, the plasma can be constrained in the reaction area between the upper and lower electrodes while the reaction gas is discharged, so as to prevent the plasma from leaking to the non-reactive area and cause damage to the components in the non-reactive area. A moving ring 14 is provided above the plasma confinement ring 13. A piston cylinder 15 is arranged above the first electrode 11, and a connecting plate 19 is arranged above the piston cylinder 15, and the moving ring 14 is connected to the connecting plate 19 through a connecting rod 17. The side wall of the first electrode 11 is fixed with a supporting plate 20, the connecting rod 17 is connected to the moving ring 14 through a through hole on the supporting plate 20, and is connected to the supporting plate 20 through a corrugated tube 16. An insulating ring 18 is provided between the second electrode 12 and the plasma confinement ring 13.

In the manner shown in FIG. 1, the connecting rod 17 is driven to move upward by driving the piston cylinder 15, and then the moving ring 14 can be driven to move upward to expose the gap 10. After placing the wafer to be etched on the upper surface of the second electrode 12, the driving piston cylinder 15 drives the moving ring 14 to move downward, and the moving ring 14 and the plasma confinement ring 13 form a first plasma distribution space, and a gap 10 Connect with the setting space, and finally ignite the plasma to etch the wafer.

In one embodiment, the setting space may be a groove provided on the upper surface of the plasma confinement ring 13, and the realization of the setting space is obviously not limited to the groove. In other manners, the upper surface of the plasma confinement ring 13 may be directly lower than the second electrode 12, and the setting space for adjusting the size of the plasma distribution space can also be realized by using the height difference between the two.

Referring to FIG. 2, FIG. 2 is a schematic structural diagram of another conventional plasma etching equipment. As shown in FIG. 2, the plasma etching equipment has a first electrode 21 and a second electrode 22 arranged oppositely. The first electrode 21 is located above the second electrode 22 with a gap 30 between them. A plasma confinement ring 23 is provided around the second electrode 22, and the plasma confinement ring 23 has a setting space. A moving ring 24 is provided above the plasma confinement ring 23. A piston cylinder 25 is provided above the first electrode 21, and a connecting plate 29 is provided above the piston cylinder 25, and the moving ring 24 is connected to the connecting plate 29 through a connecting rod 27. The side wall of the first electrode 21 is fixed with a supporting plate 31, the connecting rod 27 is connected to the moving ring 24 through the through hole of the supporting plate 31, and is connected to the supporting plate 31 through the corrugated tube 26. An insulating ring 28 is provided between the second electrode 22 and the plasma confinement ring 23.

In the manner shown in FIG. 2, the connecting rod 27 is driven to move upward by driving the piston cylinder 25, and then the moving ring 24 can be driven to move upward to expose the gap 30. After the wafer to be etched is placed on the upper surface of the second electrode 22, the piston cylinder 25 is driven to drive the moving ring 24 to move downward to seal the circumference of the gap 30 and isolate the gap 30 from the set space, so that the moving ring 24 and the electrical The plasma confinement ring 23 forms a second plasma distribution space, and finally ignites the plasma to etch the wafer.

It can be seen from Figures 1 and 2 that the first plasma distribution space is larger than the second plasma distribution space.

In the plasma etching equipment of the two methods described above, the moving ring is an integral part. In order to meet the plasma volume requirements of different processes, it is necessary to stop the machine to disassemble and replace the moving ring of different shapes. The operation is complicated and inconvenient to use. .

In order to solve the above-mentioned problems, the present invention provides a plasma etching equipment. The etching equipment includes the following components.

An electrode assembly. The electrode assembly includes a first electrode and a second electrode disposed oppositely, the first electrode is located above the second electrode, and the two have a gap.

The plasma confinement ring surrounds the second electrode, and the upper surface of the plasma confinement ring has a setting space whose height is smaller than the upper surface of the second electrode.

The movable ring assembly is movable, which is located above the plasma confinement ring and surrounds the electrode assembly.

Drive mechanism, the drive mechanism can change the spatial form of the moving ring assembly. Specifically, the driving mechanism can make the moving ring assembly in the first form, exposing the gap, so that the wafer to be etched can be placed on the upper surface of the second electrode. Alternatively, the movable ring assembly is in the second form, the circumference of the gap is sealed, and the gap and the set space are isolated to form the first plasma distribution space. Or, the movable ring assembly is in the third form, the circumference of the gap is sealed, and the gap and the set space are connected to form a second plasma distribution space. And the second plasma distribution space is larger than the volume of the first plasma distribution space.

Therefore, in the technical solution provided by the embodiment of the present invention, when plasma etching is performed, the spatial form of the moving ring assembly can be changed by adjusting the driving mechanism, and the plasma can be achieved without stopping the machine to replace the moving ring assembly. The volume is adjusted, and its structure is simple and easy to operate.

In order to make the above objectives, features and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

Referring to FIGS. 3 and 4, FIG. 3 is a schematic structural diagram of a plasma etching apparatus provided by an embodiment of the present invention, and FIG. 4 is a schematic structural diagram of another plasma etching apparatus provided by an embodiment of the present invention. Figures 3 and 4 illustrate the design schemes of different plasma volumes that can be realized when the moving ring components in the same plasma etching equipment have different spatial shapes. In the embodiment of the present invention, a moving ring with a complex structure is divided into two independent moving rings, and different piston cylinders are used to drive the moving ring, so that the same electric ring can be used without stopping the machine to replace the moving ring. The plasma etching equipment realizes the adjustment of the plasma volume.

Specifically, the plasma etching equipment includes the following elements.

An electrode assembly. The electrode assembly includes a first electrode 47 and a second electrode 32 disposed oppositely. The first electrode 47 is located above the second electrode 32 and has a gap 46 between the two. The gap 46 is used to form plasma and perform an etching process.

The plasma confinement ring 33 surrounds the second electrode 32, and the upper surface of the plasma confinement ring 33 has a setting space 48 whose height is smaller than the upper surface of the second electrode 32. It should be noted that the setting space 48 has on-off valves for pumping and exhausting. Based on the cost and the functional requirements of the setting space 48, generally speaking, the structure of the plasma confinement ring 33 will not be improved to achieve different electrical The purpose of pulp volume adjustment.

The movable ring assembly is movable, which is located above the plasma confinement ring 33 and surrounds the electrode assembly.

The driving mechanism, the driving mechanism can change the spatial form of the moving ring assembly, so that the moving ring assembly is in the first form, and the gap 46 is exposed, so that the wafer to be etched can be placed on the upper surface of the second electrode 32. Alternatively, the movable ring assembly is in the second form, the circumference of the gap 46 is sealed, and the gap 46 and the setting space 48 are isolated to form the first plasma distribution space. Or, the moving ring assembly is in the third form, the circumference of the gap 46 is sealed, and the gap 46 and the setting space 48 are connected to form a second plasma distribution space. In addition, the second plasma distribution space is larger than the volume of the first plasma distribution space.

Among them, the moving ring assembly includes: a first moving ring 34 and a second moving ring 35. Both the first moving ring 34 and the second moving ring 35 surround the electrode assembly, and both are located above the plasma confinement ring 33. Among them, the first moving ring 34 is used to seal or release the circumference of the gap 46, and the second moving ring 35 is used to seal or release the setting space 48. The second moving ring 35 is provided with a passage that confines the plasma but allows gas to pass through, and this passage may be provided in the gas through hole 66 on the second moving ring 35. When the second moving ring 35 is in the second form, the second moving ring 35 will restrict the plasma distribution space. At this time, the space between the second moving ring 35 and the plasma confinement ring 33 will no longer be plasma distributed. . It can be shown in FIG. 5, which is a cross-sectional view of a moving ring assembly provided by an embodiment of the present invention.

It should be noted that the position, number, and shape of the gas through holes 66 can be arbitrarily set based on requirements, which are not specifically limited in the embodiment of the present invention. By setting the aspect ratio of the gas through hole 66, the plasma collides with the side wall of the through hole and is extinguished when passing through, so that the plasma is restricted while allowing the gas to pass through.

Wherein, the first moving ring 34 may be any one of quartz material, ceramic material, or Teflon material. The second moving ring 35 may be any one of quartz material, ceramic material, or Teflon material.

In conventional plasma etching equipment, the moving ring is a separate part. When plasma etching is performed, the moving ring is driven to move by driving the piston cylinder. When the moving ring moves upward, the gap is exposed. After placing the wafer to be etched on the second electrode, the piston cylinder drives the moving ring to move down to seal the gap. However, in order to meet the needs of plasma volume, it is necessary Stopping to disassemble and replace moving rings of different shapes, the operation is complicated and inconvenient to use.

In the embodiment of the present invention, an integral moving ring is divided into a first moving ring 34 and a second moving ring 35, and different piston cylinders are provided to drive the first moving ring 34 and the second moving ring 35 to move. , Without the need to stop the machine to replace the moving ring, a plasma etching device can be used to adjust the plasma volume to meet the requirements of different processes for the size of the plasma distribution area. The structure is simple and easy to operate.

Further, the first moving ring 34 includes a top and side walls. The top of the first moving ring 34 is disposed opposite to the plasma confinement ring 33, and the side wall of the first moving ring 34 is disposed opposite to the outer side wall of the setting space 48. The second moving ring 35 is arranged opposite to the opening of the setting space 48, and is located below the top of the first moving ring 34, and is located in the area enclosed by the side wall of the first moving ring 34.

In one way, when the moving ring assembly is in the first form, the first moving ring 34 and the second moving ring 35 are both located above the gap 46 to expose the gap 46.

Specifically, in the embodiment of the present invention, the first connecting plate 39 and the second connecting plate 40 are driven to move upward through the driving mechanism, thereby driving the first moving ring 34 and the second moving ring 35 to move upwards, exposing the gap 46 for convenience The wafer to be etched is placed on the upper surface of the second electrode 32.

In another way, when the moving ring assembly is in the second form, the second moving ring 35 seals and covers the opening of the setting space 48, and the first moving ring 34 seals around the gap 46 to form a first plasma distribution space.

Specifically, in the embodiment of the present invention, the first connecting plate 39 and the second connecting plate 40 are driven to move downward through the driving mechanism, thereby driving the first moving ring 34 and the second moving ring 35 to move downward, so that the second moving The ring 35 seals and covers the opening of the setting space 48, and the first moving ring 34 seals the circumference of the gap 46 to form a first plasma distribution space. As shown in Figure 3.

In another way, when the moving ring assembly is in the third form, the first moving ring 34 seals the circumference of the gap 46, and the gap 46 is connected to the setting space 48 to form a second plasma distribution space. The second moving ring 35 is located in the second plasma distribution space and above the opening of the setting space 48 and is separated from the opening of the setting space 48.

Specifically, in the embodiment of the present invention, the second connecting plate 40 is driven to move upward through the driving mechanism, and then the second moving ring 35 is driven to move upward, and moves to above the opening of the setting space 48, and is separated from the opening of the setting space 48 , So that the first moving ring 34 seals the circumference of the gap 46, and the gap 46 communicates with the setting space 48 to form a second plasma distribution space. As shown in Figure 4.

The top of the first moving ring 34 is connected to the driving mechanism through the first connecting rod 44, and the driving mechanism drives the first moving ring 34 to move in the first direction through the first connecting rod 44. The second moving ring 35 is connected to the driving mechanism through the second connecting rod 41, and the driving mechanism drives the second moving ring 35 to move in the first direction through the second connecting rod 41. Wherein, the second connecting rod 41 is connected to the driving mechanism through a through hole penetrating through the first moving ring 34. In addition, the first direction is a direction in which the first electrode 47 and the second electrode 32 face each other.

In the embodiment of the present invention, the driving mechanism drives the first connecting plate 39 and the first moving ring 34 to move upward through the first connecting rod 44, and drives the driving mechanism to drive the second connecting plate 40 and the second moving through the second connecting rod 41 The ring 35 moves upward, exposing the gap 46, so that the moving ring assembly is in the first form. Alternatively, the driving mechanism drives the first connecting plate 39 and the first moving ring 34 to move downward through the first connecting rod 44, and drives the upper driving mechanism to drive the second connecting plate 40 and the second moving ring through the second connecting rod 41 35 moves downwards to seal and cover the opening of the setting space 48 through the second moving ring 35, and the first moving ring 34 seals the circumference of the gap 46 to form a first plasma distribution space, so that the moving ring assembly is in the second form. Or, the driving mechanism drives the second connecting plate 40 and the second moving ring 35 to move upward through the second connecting rod 41, and seals the circumference of the gap 46 through the first moving ring 34, and the gap 46 communicates with the setting space 48 to form a first The second plasma distribution space makes the moving ring assembly in the third form. Wherein, the second plasma distribution space is larger than the first plasma distribution space.

Different substrate processing processes have different requirements for the size of the plasma distribution space. The plasma etching reaction includes the plasma physical bombardment reaction and the chemical reaction of neutral free radicals. Between the first electrode 47 and the second electrode 32, the plasma is distributed approximately in a parabola with the center of the upper and lower electrodes as the center, the middle area is higher than the edge area, and the larger the plasma distribution space, the smoother the parabola and the plasma in the entire The more even the distribution in the treatment area. At this time, when the substrate processing process is dominated by plasma physical bombardment or the physical bombardment and the chemical reaction are equal, a uniformly distributed plasma is required. At this time, the moving ring can be adjusted to form a larger plasma distribution space. When the chemical reaction in the edge area of the substrate is found to be faster during the substrate processing process, in order to compensate for the etching rate in the central area, it is necessary to adjust the plasma distribution to a state where the plasma distribution is high in the middle and low in the edge to improve the physical bombardment of the plasma in the central area. As a result, the etching speed in the central area is increased, so that the entire substrate surface is uniformly etched. The technical solution of the present invention can use two moving rings in a reaction chamber to form plasma distribution spaces of different sizes. When the process needs to be switched, it can be realized without replacing the moving ring or the reaction chamber, which greatly improves the universality of the equipment. And improve work efficiency.

In the embodiment of the present invention, a supporting member 45 is fixed on the side wall of the first electrode 47; wherein, a first corrugated tube 43 connected to the first connecting rod 44 is fixed above the supporting member 45, and a second corrugated tube 43 is fixed above the supporting member 45. The second bellows 38 connected by the connecting rod 41. It should be noted that the supporting member 45 has a through hole, and the first connecting rod 44 is connected to the first moving ring 34 through the through hole on the supporting member 45, and is connected to the supporting member 45 through the first bellows 43. Alternatively, the second connecting rod 41 is connected to the second moving ring 35 through a through hole on the supporting member 45, and is connected to the supporting member 45 through a second bellows 38. Both the first bellows 43 and the second bellows 38 are used for stretching and sealing, so that the driving mechanism drives the moving assembly to move up and down.

The driving mechanism includes: a first piston cylinder 36 arranged on the first electrode 47, a first connecting plate 39 is fixed above the first piston cylinder 36; and a second piston arranged above the first connecting plate 39 The second piston type cylinder 37 is fixed with a second connecting plate 40 above the second piston type cylinder 37. The first piston cylinder 36 drives the first connecting plate 39 to drive the first moving ring 34 to move, and drives the upper second piston cylinder 37 and the second connecting plate 40 to drive the second moving ring 35 to move. In addition, the second piston cylinder 37 drives the second connecting plate 40 to drive the second moving ring 35 to move.

In the embodiment of the present invention, when the moving ring assembly is in the first form, the first piston cylinder 36 drives the first connecting plate 39 and the first moving ring 34 to move upward through the first connecting rod 44, and drives the second piston type The air cylinder 37 drives the second connecting plate 40 and the second moving ring 35 to move upward through the second connecting rod 41 to expose the gap 46. When the moving ring assembly is in the second form, the first piston cylinder 36 drives the first connecting plate 39 and the first moving ring 34 to move downward through the first connecting rod 44, and drives the second piston cylinder 37 through the second The connecting rod 41 drives the second connecting plate 40 and the second moving ring 35 to move downward, so that the second moving ring 35 seals and covers the opening of the setting space 48, and the first moving ring 34 seals the circumference of the gap 46 to form a first electrical Pulp distribution space. When the moving ring assembly is in the third form, the second piston cylinder 37 drives the second connecting plate 40 and the second moving ring 35 to move upward through the second connecting rod 41. The first moving ring 34 seals the circumference of the gap 46, and the gap 46 communicates with the setting space 48 to form a second plasma distribution space.

The plasma etching equipment provided by the embodiment of the present invention further includes: an insulating ring 42 arranged between the second electrode 32 and the plasma confinement ring 33. Wherein, the insulating ring 42 may be any one of quartz material, ceramic material, or Teflon material.

According to the above description, in the plasma etching equipment provided by the embodiments of the present invention, when plasma etching is performed, the spatial form of the moving ring assembly can be changed by adjusting the driving mechanism, so that the moving ring assembly is in the first form and the gap is exposed. In order to place the wafer to be etched on the upper surface of the electrode assembly. Alternatively, the movable ring assembly is in the second form, the circumference of the gap is sealed, and the gap and the set space are isolated to form the first plasma distribution space. Or, the movable ring assembly is in the third form, the circumference of the gap is sealed, and the gap and the set space are connected to form a second plasma distribution space. Wherein, the second plasma distribution space is larger than the volume of the first plasma distribution space. By applying the plasma etching equipment provided by the embodiments of the present invention, the plasma volume can be adjusted without shutting down to replace the moving ring assembly, and its structure is simple and easy to operate.

The various embodiments in this specification are described in a progressive, or parallel, or a combination of progressive and parallel. Each embodiment focuses on the differences from other embodiments, and the same and similar parts between the various embodiments are referred to each other. That's it.

It should be further clarified that in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply these entities or operations. There is any such actual relationship or sequence between operations. Moreover, the terms "include", "include" or any variation thereof are intended to cover non-exclusive inclusion, so that an article or device including a series of elements not only includes the listed elements, but also includes other elements that are not explicitly listed. Elements, or further include elements inherent to such items or equipment. Without more restrictions, the element defined by the term "including one..." does not exclude the further existence of another same element in the article or equipment including the above element.

The above description of the disclosed embodiments enables those with ordinary knowledge in the art to implement or use the present invention. Various modifications to these embodiments will be obvious to those with ordinary knowledge in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown in this document, but should conform to the widest scope consistent with the principles and novel technical features disclosed in this document.

10, 30: clearance 11, 21: first electrode 12, 22: second electrode 13,23: Plasma confinement ring 14,24: moving ring 15,25: Piston cylinder 16,26: bellows 17,27: connecting rod 18, 28: Insulating ring 19, 29: connecting plate 20, 31: support plate 32: second electrode 33: Plasma confinement ring 34: The first moving ring 35: The second moving ring 36: The first piston cylinder 37: The second piston cylinder 38: The second bellows 39: The first connecting plate 40: The second connecting plate 41: second link 42: Insulation ring 43: The first bellows 44: The first link 45: Supporting parts 46: Clearance 47: first electrode 48: Setting space 66: Gas through hole

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the embodiments or the description of the prior art. Obviously, the drawings in the following description are only part of the embodiments of the present invention. For those with ordinary knowledge in the art, other drawings can be obtained based on the provided drawings without creative work. Figure 1 is a schematic structural diagram of a conventional plasma etching equipment; Figure 2 is a schematic structural diagram of another conventional plasma etching equipment; FIG. 3 is a schematic structural diagram of a plasma etching equipment provided by the present invention; 4 is a schematic structural diagram of another plasma etching equipment provided by the present invention; Fig. 5 is a cross-sectional view of a moving ring assembly provided by an embodiment of the present invention.

32: second electrode

33: Plasma confinement ring

34: The first moving ring

35: The second moving ring

36: The first piston cylinder

37: The second piston cylinder

38: The second bellows

39: The first connecting plate

40: The second connecting plate

41: second link

42: Insulation ring

43: The first bellows

44: The first link

45: Supporting parts

46: Clearance

47: first electrode

48: Setting space

Claims (10)

A plasma etching equipment, the plasma etching equipment includes: An electrode assembly, the electrode assembly includes a first electrode and a second electrode disposed oppositely, the first electrode is located above the second electrode, and the two have a gap; A plasma confinement ring, the plasma confinement ring surrounds the second electrode, and the upper surface of the plasma confinement ring has a setting space whose height is smaller than the upper surface of the second electrode; A movable ring assembly that is located above the plasma confinement ring and surrounds the electrode assembly; A driving mechanism that can change the spatial form of the moving ring assembly so that the moving ring assembly is in a first form, exposing the gap, so that the wafer to be etched can be placed on the upper surface of the second electrode, or the The moving ring assembly is in a second form, sealing the circumference of the gap, and isolating the gap and the setting space to form a first plasma distribution space, or making the moving ring assembly in a third form, sealing the gap And connect the gap and the setting space to form a second plasma distribution space. The second plasma distribution space is larger than the volume of the first plasma distribution space. The plasma etching equipment according to claim 1, wherein the moving ring assembly includes: a first moving ring and a second moving ring; both the first moving ring and the second moving ring surround the electrode assembly, and two Are located above the plasma confinement ring; Wherein, the first moving ring is used to seal or release the circumference of the gap, and the second moving ring is used to seal or release the setting space. The plasma etching equipment according to claim 2, wherein if it is in the first form, the first moving ring and the second moving ring are both located above the gap to expose the gap; If in the second form, the second moving ring seals and covers the opening of the setting space, and the first moving ring seals the circumference of the gap to form the first plasma distribution space; If in the third form, the first moving ring seals the circumference of the gap, the gap communicates with the setting space to form the second plasma distribution space, and the second moving ring is located in the second plasma distribution space, And it is located above the opening of the setting space and separated from the opening of the setting space. The plasma etching equipment according to claim 2, wherein the first moving ring includes a top and a side wall, the top of the first moving ring is arranged opposite to the plasma confinement ring, and the side wall of the first moving ring and the setting space The outer side walls are arranged opposite to each other; The second moving ring is arranged opposite to the opening of the setting space, is located below the top of the first moving ring, and is located in the area enclosed by the side wall of the first moving ring. The plasma etching equipment according to claim 4, wherein the top of the first moving ring is connected to the driving mechanism through a first connecting rod, and the driving mechanism drives the first moving ring through the first connecting rod. Move in one direction; The second moving ring is connected to the driving mechanism through a second connecting rod, and the driving mechanism drives the second moving ring to move in the first direction through the second connecting rod; Wherein, the second connecting rod is connected to the driving mechanism through a through hole penetrating the first moving ring; the first direction is the direction in which the first electrode and the second electrode are opposite. The plasma etching equipment according to claim 5, wherein a supporting member is fixed on the side wall of the first electrode; Wherein, a first corrugated tube connected to the first connecting rod is fixed above the supporting member, and a second corrugated tube connected to the second connecting rod is fixed above the supporting member. The plasma etching equipment according to claim 2, wherein the driving mechanism includes: a first piston cylinder arranged on the first electrode, and a first connecting plate is fixed above the first piston cylinder; and A second piston cylinder above the first connecting plate, and a second connecting plate is fixed above the second piston cylinder; The first piston cylinder drives the first connecting plate to drive the first moving ring to move, and drives the upper second piston cylinder and the second connecting plate to drive the second moving ring to move; The second piston cylinder drives the second connecting plate to drive the second moving ring to move. The plasma etching equipment according to claim 2, wherein the first moving ring is made of quartz material, ceramic material, or Teflon material; The second moving ring is made of quartz material, ceramic material, or Teflon material. The plasma etching equipment according to any one of claim 1 to claim 8, further comprising: an insulating ring arranged between the second electrode and the plasma confinement ring. The plasma etching equipment according to claim 9, wherein the insulating ring is made of quartz material, ceramic material, or Teflon material.

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