CN106611691B - Multifrequency pulse plasma processing apparatus and its processing method and cleaning method - Google Patents

Multifrequency pulse plasma processing apparatus and its processing method and cleaning method Download PDF

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Publication number
CN106611691B
CN106611691B CN201510699803.5A CN201510699803A CN106611691B CN 106611691 B CN106611691 B CN 106611691B CN 201510699803 A CN201510699803 A CN 201510699803A CN 106611691 B CN106611691 B CN 106611691B
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radio
reaction chamber
frequency power
power supply
electrode
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CN201510699803.5A
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CN106611691A (en
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梁洁
叶如彬
杜冰洁
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中微半导体设备(上海)有限公司
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Abstract

The present invention relates to a kind of multifrequency pulse plasma processing apparatus, including:Reaction chamber;Its inner top is equipped with spray head, and first electrode is equipped at the spray head;Its interior bottom is equipped with the pedestal of carrying substrates;It is equipped with the second electrode for being applied with the first radio-frequency power power supply and the second radio-frequency power power supply at the pedestal, forms main plasma between pedestal and spray head;Shift(ing) ring, the inside sidewalls along reaction chamber are arranged;Internal vertical is equipped with the third electrode for being applied with the third radio-frequency power power supply using continuous radio-frequency power, and edge plasma is formed in the fringe region of reaction chamber.The invention further relates to the processing method of multifrequency pulse plasma processing apparatus and cleaning methods.The present invention is forming edge plasma at reaction chamber fringe region, and stable charge is provided for synchronous switch pulsed discharge, prevents the main plasma above substrate from extinguishing;And the indoor all parts of reaction chamber can be more effectively cleaned to, cavity stability is improved.

Description

Multifrequency pulse plasma processing apparatus and its processing method and cleaning method

Technical field

The present invention relates to corona treatment field, in particular to a kind of carrying out corona treatment using multifrequency pulse Device and its processing method and cleaning method.

Background technology

Apparatus for processing plasma, by introducing containing appropriate etching agent to vacuum reaction chamber or depositing the anti-of source gas Gas is answered, RF energy then is applied to the reaction chamber again, plasma is generated with dissociation reaction gas, for being positioned over The indoor substrate surface of reaction chamber is processed.

By taking the plasma processing apparatus for being etched technique as an example, as shown in Figure 1, comprising reaction chamber 1, by being located at top The head cover 4 at end, is located at the bottom wall of bottom end, and the side wall being connected between head cover 4 and bottom wall is constituted, and forms the inside of air-tightness Reaction compartment, and it is in vacuum state during carrying out plasma etching treatment and cleaning.Wherein, the head cover 4, Bottom wall and side wall are made of metal material and are grounded.

First electrode is set at spray head 3 of 1 top of reaction chamber for introducing reaction gas, at 1 bottom of reaction chamber Portion for carry and the pedestal of sticking substrate 5 at setting second electrode.Apply radio-frequency power in the second electrode, thus The RF energy needed for excitation plasma 11 is obtained in reaction chamber 1.

Specifically, being applied with the first radio-frequency power power supply for being separated by certain frequency in the second electrode(HF)7 Hes Second radio-frequency power power supply(LF)8, and the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 pass through an adaptation It is connected to second electrode.The wherein higher first radio-frequency power power supply 7 of frequency, to control the dissociation of reaction gas intermediate ion or wait Plasma density;And the lower second radio-frequency power power supply 8 of frequency is also known as bias power power supply, is biased to control for introducing It is incident on the ion energy and its Energy distribution of substrate.

The pedestal 5 is located at the bottom of reaction chamber 1, and focusing ring 10 is equipped in the outside at 5 edge of pedestal(focus ring), for controlling plasma uniformity.Further, it is equipped with confinement ring 6 in the outside of the focusing ring 10(confinement ring), the discharge for controlling reaction gas.Cover ring can also be arranged in the top of the confinement ring 6(Cover ring, in figure Do not show), it is used for erosion of the barrier plasma to confinement ring 6.It is equipped with shift(ing) ring 2 in the lower section of the head cover 4(moving ring), and the shift(ing) ring 2 is arranged along the inside sidewalls of reaction chamber 1, and extend on the outside of the edge of confinement ring 6;The shift(ing) ring 2 insulating materials corroded using anti-plasma(Such as quartz)It is made, for constraining the distribution of plasma, and by reaction chamber The metal sidewall of room 1 is separated with plasma, to protect the erosion of cavity wall not subject plasma.

In process treatment process, the output that the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 is arranged is pulse Output is a kind of common mode in high aspect ratio.Two radio-frequency power power supplys export the radio frequency work(being pulse modulation Rate is for generating plasma 11, and the density of generated plasma 11 changes with pulse generation, charged particle therein(Electricity Son and ion)Quantity intermittence changes, to make the corrasion of plasma be controlled and be buffered.

As shown in Fig. 2, the higher first radio-frequency power power supply 7 of frequency and the lower second radio-frequency power power supply of frequency 8 are adopted It is controlled with identical clock pulses.Since plasma 11 cannot be allowed to extinguish in etching process, it is therefore necessary to keep appointing There is certain RF power fed-in at the meaning moment;So in actual use, the first radio-frequency power power supply 7 uses high-low power pulse, and Second radio-frequency power power supply 8 then uses high-low power pulse or switching pulse.When the first radio-frequency power power supply 7 and the second radio frequency For power power-supply 8 in high level power output, plasma 11 performs etching the substrate in reaction chamber 1;When the first radio frequency When low-level of power exports, plasma 11 maintains electric discharge for power power-supply 7 and the second radio-frequency power power supply 8.

Since the pulse output period of the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 is usually musec order, It is from high power pulse to during low powder pulsed switching, switch speed and its quickly so that the shell of plasma 11 Layer impedance mutates.Due to carry out the matched adaptations of RF be adjustable resistance or the inductance that it is internal by Mechanical Driven come into Row impedance is adjusted, so that the shell matches impedances of itself and plasma 11.Because of the limitation of Mechanical Driven, governing speed is most It also can only achieve a millisecond magnitude soon.That is, when the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 are cut in pulse When changing the shell change in the instantaneous impedance of the plasma 11 occurred in the process, the impedance governing speed of adaptation is not caught up with much, Therefore it will cause the RF energy exported by the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 can not be normal through Adaptation is fed into reaction chamber 1 so that plasma 11 extinguishes.

Therefore, ideal mode is to set the low level output of the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 It is set to 0, i.e. the pulse output of the two is set as the state of On-Off-On-pass.At this point, adaptation is not necessarily to carry out the fast of two states Speed switching can preferably provide minimum radio-frequency power for vacuum reaction chamber.However, working as the low of the first radio-frequency power power supply 7 When level output is set as 0, the plasma 11 in reaction chamber 1 will disappear.But after next high level output starts, Since plasma is difficult to be ignited in moment, and high level lasting time is shorter, leads to that ideal can not be generated in reaction chamber 1 Condition of plasma.Therefore, etching technics is difficult to be normally carried out.

In addition, some polymer caused by during corona treatment, can be attached to each in reaction chamber 1 On a device.Usually after taking out the substrate for completing processing out of reaction chamber 1, need to introduce cleaning to reaction chamber 1 Etching gas is simultaneously dissociated the plasma for generating cleaning, is used for the cavity to reaction chamber 1 and each device of inside Plasma clean is carried out, with the polymer of removal attachment, to keep the stabilization of reaction chamber 1.

However, since first electrode, the field strength of second electrode edge can be influenced by rim condition, lead to a part of electricity Field wire is bent, and causes Electric field edge part field strength uneven so that plasma is by electric field controls in the close of 1 edge of reaction chamber It spends relatively low, it is difficult to form enough plasmas by the edge member of chamber(Such as above-mentioned shift(ing) ring, confinement ring, cover ring Deng)It cleans up, remaining deposited polymer can bring discharge breakdown(arcing)It influences, or forms particle(particle)It is right Subsequent Substrate treatment causes the risk of potential pollution.

Invention content

The purpose of the present invention is to provide a kind of multifrequency pulse plasma processing apparatus and its processing method and cleaning sides Method is forming edge plasma at reaction chamber fringe region, stable charge is provided for synchronous switch pulsed discharge, Prevent the main plasma above substrate from extinguishing;And the indoor all parts of reaction chamber can be more effectively cleaned to, chamber is improved Body stability.

In order to achieve the above object, the technical solution of the present invention is to provide a kind of multifrequency pulse plasma processing apparatus, Including:Reaction chamber;The indoor top of the reaction chamber is equipped with spray head, and process use or clear is introduced into reaction chamber The reaction gas washed;It is provided with first electrode at the spray head;The indoor bottom of the reaction chamber is equipped in process When carrying substrates pedestal;Be provided with second electrode at the pedestal, and between the second electrode and first electrode on be applied with One radio-frequency power power supply and the second radio-frequency power power supply are formed by the process use that rf electric field excitation introduces reaction chamber Or the reaction gas of cleaning, main plasma is formed between pedestal and spray head;Shift(ing) ring, along the side wall of reaction chamber Inside is arranged;It is vertically installed with third electrode in the shift(ing) ring, is applied on the third electrode and is continued using continuous radio-frequency power The third radio-frequency power power supply of power supply, be formed by rf electric field excitation introduce the process of reaction chamber with or cleaning Reaction gas forms edge plasma in reaction chamber by the fringe region that shift(ing) ring limits.

Frequency >=13.56MHz of the third radio-frequency power power supply, power is in the range of 300W~500W.

The third electrode is arranged along the circumferencial direction of shift(ing) ring, annularly.

The third electrode and it is placed on the interval with 10~20cm between the substrate on pedestal so that main plasma It does not overlap between body and edge plasma.

Power >=800W of the first radio-frequency power power supply and the second radio-frequency power power supply.

At least one of described first radio-frequency power power supply and the second radio-frequency power power supply are penetrated using pulse modulated Frequency power, the pulse modulated radio-frequency power are high-low power pulse or switching pulse.

The reaction chamber is located at the bottom wall of bottom end by the head cover positioned at top, and be connected to head cover and bottom wall it Between side wall constitute;Wherein, the head cover, bottom wall and side wall are made of metal material and are grounded.

It is further included in the reaction chamber:Focusing ring is located at the outside of the susceptor edges;Confinement ring is located at institute State the outside of focusing ring;Cover ring is located at the top of the confinement ring.

The present invention also provides a kind of processing methods of multifrequency pulse plasma processing apparatus, including:Apply the first radio frequency Second electrode in power power-supply and the second radio-frequency power power supply to reaction chamber at bottom base sprays reaction chamber inner top The process that leaching head introduces is excited with reaction gas, main plasma is formed between pedestal and spray head, with to anti- The indoor substrate of chamber is answered to perform etching processing;In the third radio-frequency power power supply to shift(ing) ring for applying continuous radio-frequency power simultaneously Third electrode, the process introduced to reaction chamber inner top spray head is excited with reaction gas, in reaction chamber Edge plasma is formed at the fringe region limited by shift(ing) ring, to provide the charge needed for main plasma electric discharge, makes master Plasma exists always.

Frequency >=13.56MHz of the third radio-frequency power power supply, power is in the range of 300W~500W.

The third electrode is vertically in implantation shift(ing) ring made of insulating materials;And the third electrode edge is moved The circumferencial direction of ring is arranged, annularly.

The third electrode and it is placed on the interval with 10~20cm between the substrate on pedestal so that main plasma It does not overlap between body and edge plasma.

The present invention also provides a kind of cleaning methods of multifrequency pulse plasma processing apparatus, including:Apply the first radio frequency Second electrode in power power-supply and the second radio-frequency power power supply to reaction chamber at bottom base sprays reaction chamber inner top The cleaning that leaching head introduces is excited with reaction gas, main plasma is formed between pedestal and spray head, with to reaction chamber Indoor component is cleaned;Apply the third electricity in the third radio-frequency power power supply to shift(ing) ring of continuous radio-frequency power simultaneously Pole, the cleaning introduced to reaction chamber inner top spray head are excited with reaction gas, are limited by shift(ing) ring in reaction chamber Edge plasma is formed at fixed fringe region, to be cleaned to the indoor component positioned at marginal position of reaction chamber.

Frequency >=13.56MHz of the third radio-frequency power power supply, power is in the range of 300W~500W.

The third electrode is arranged along the circumferencial direction of shift(ing) ring, annularly.

The third electrode and it is placed on the interval with 10~20cm between the substrate on pedestal so that main plasma It does not overlap between body and edge plasma.

Multifrequency pulse plasma processing apparatus provided by the invention and its processing method and cleaning method have following excellent Point and advantageous effect:

1, continuous radio-frequency power is applied to the third electrode in shift(ing) ring by third radio-frequency power power supply, with relatively low Power formed at the fringe region of reaction chamber and existing edge plasma always;When the first radio-frequency power power supply or For second radio-frequency power power supply when pulse switches from high to low, edge plasma will provide main plasma electric discharge required electricity Lotus, therefore can avoid main plasma and extinguish, synchronous switch pulsed discharge stability problem is overcome, ensures corona treatment The normal table of technique carries out.

2, the third electrode in shift(ing) ring and it is placed on the interval that 10~20cm or so is set between the substrate on pedestal, from And not will produce Chong Die between edge plasma and main plasma, effectively avoid the shell impedance of two plasmas It affects one another.

3, during being cleaned to reaction chamber, shift(ing) ring etc. can be cleaned to by third radio-frequency power power supply Positioned at the component of reaction chamber marginal position, deposited polymer is comprehensively and effectively removed so that the stability of reaction chamber obtains It improves.

Description of the drawings

Fig. 1 is the structural schematic diagram of plasma processing apparatus in the prior art;

Fig. 2 is the Pulse Width Control schematic diagram of high and low frequency radio-frequency power power supply in the prior art;

Fig. 3 is the structural schematic diagram of the multifrequency pulse plasma processing apparatus in the present invention.

Specific implementation mode

Below in conjunction with attached drawing, description of specific embodiments of the present invention.

As shown in figure 3, in multifrequency pulse plasma processing apparatus provided by the invention, including reaction chamber 1, by position Head cover 4 in top, is located at the bottom wall of bottom end, and the side wall being connected between head cover 4 and bottom wall is constituted, and forms air-tightness Internal-response space, and it is in vacuum state during carrying out plasma etching treatment and cleaning.Wherein, the top Lid 4, bottom wall and side wall are made of metal material and are grounded.

At the top of reaction chamber 1(The lower section of head cover 4)Equipped with spray head 3, the reaction gas for will be etched Body introduces in reaction chamber 1;The first electrode ground connection being arranged at the spray head 3.Bottom in reaction chamber 1 is equipped with pedestal 5, For carrying out carrying and sticking to the substrate being placed on the pedestal 5.It, will be anti-by the rf electric field formed in reaction chamber 1 The reaction gas in chamber 1 is answered to dissociate, and the region between pedestal 5 and spray head 3 forms main plasma 11, to substrate table Face such as is etched at the process.

It is provided with second electrode at the pedestal 5, the first radio frequency work(for being separated by certain frequency is applied in the second electrode Rate power supply(HF)7 and the second radio-frequency power power supply(LF)8, and the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 are logical It crosses an adaptation and is connected to second electrode.The wherein higher first radio-frequency power power supply of frequency 7(Such as 60MHz), to control Reaction gas intermediate ion dissociates or plasma density;And the lower second radio-frequency power power supply of frequency 8(Such as 2MHz)Also known as Bias power power supply, for introducing the ion energy and its Energy distribution that are biased to control and are incident on substrate.

In another embodiment of the present invention, first radio frequency power source 7 can also be connected to first electrode, this When first electrode it is earth-free, which can be transmitted to the second electrode of lower section by capacitive coupling, equally can be real Existing the object of the invention.

Power >=800W of the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8.

At least one of described first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 are using pulse modulated Radio-frequency power, which can be high-low power pulse, can also be switching pulse.

That is, in a preferred embodiment of the invention, the first radio-frequency power power supply 7 uses pulse tune The radio-frequency power of system can be high-low power pulse, can also be switching pulse;The second radio-frequency power power supply 8 is adopted With continuous radio-frequency power.

In another preferred embodiment of the invention, the second radio-frequency power power supply 8 is penetrated using pulse modulated Frequency power can be high-low power pulse, can also be switching pulse;The first radio-frequency power power supply 7 is using continuous Radio-frequency power.

In another preferred embodiment of the present invention, the first radio-frequency power power supply 7 and the second radio-frequency power electricity Source 8 is all made of the radio-frequency power of identical clock pulse modulation;That is, the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 are Using synchronous high-low power pulse;Or first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 be all made of synchronous switch arteries and veins Punching;Or first radio-frequency power power supply 7 use high-low power pulse, the second frequency power power-supply 8 use synchronous switch arteries and veins Punching;Or first radio-frequency power power supply 7 use switching pulse, the second frequency power power-supply 8 use synchronous high-low power arteries and veins Punching.

It is equipped with focusing ring 10 in the outside at 5 edge of pedestal(focus ring), for controlling the equal of plasma One property.It is equipped with confinement ring 6 in the outside of focusing ring 10(confinement ring), the discharge for controlling reaction gas;It should Cover ring can also be arranged in 6 top of confinement ring(Cover ring do not show in figure), carry out barrier plasma invading to confinement ring 6 Erosion.

It is equipped with shift(ing) ring 2 in the lower section of the head cover 4(moving ring), and the shift(ing) ring 2 is along the side of reaction chamber 1 Setting on the inside of wall, and extend downward into the outer ledge of confinement ring 6.The insulation that the shift(ing) ring 2 is corroded using resistant to plasma Material(Such as quartz)It is made, is defined for range of scatter of the plasma in reaction chamber 1, and pass through the movement The metal sidewall of plasma and reaction chamber 1 is spaced from each other by ring 2, to protect it from the erosion of subject plasma.

Third electrode 21 made of metal is vertically installed in the shift(ing) ring 2, along the circumferencial direction of shift(ing) ring 2 Setting, annularly.Apply third radio-frequency power power supply on the third electrode 21(F1)9, use continuous radio-frequency power to continue Power supply, to form edge at the fringe region of the reaction chamber 1 limited by shift(ing) ring 2, confinement ring 6, head cover 4 and spray head 3 Plasma 12.Frequency >=13.56MHz of the third radio-frequency power power supply 9, power is in the range of 300W~500W.

With between 10~20cm between third electrode 21 and the substrate being placed on pedestal 5 in the shift(ing) ring 2 Every so that being formed by between edge plasma 12 and main plasma 11 will not be overlapped.

It is additionally provided with the substrate moved in and out for substrate on the side wall of the reaction chamber 1 to import and export, in reaction chamber 1 Substrate can move down shift(ing) ring 2 after completing corona treatment, to expose substrate inlet and outlet, and then can be by substrate by substrate Import and export removes.And then pending substrate in next processing procedure can also be imported and exported from substrate moves into reaction chamber 1. After substrate moves into, shift(ing) ring 2 is can move up, substrate is imported and exported and is covered.

The method for performing etching technique using multifrequency pulse plasma processing apparatus provided by the present invention, including:It applies Add the second electrode at bottom base 5 in the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 to reaction chamber 1, to anti- It answers the process that 1 inner top spray head 3 of chamber introduces to be excited with reaction gas, is formed between pedestal 5 and spray head 3 Main plasma 11, to perform etching processing to the substrate in reaction chamber 1;Apply the third radio frequency of continuous radio-frequency power simultaneously Third electrode 21 in power power-supply 9 to shift(ing) ring 2 reacts the process that 1 inner top spray head 3 of reaction chamber introduces Gas is excited, and edge etc. is formed at the fringe region of the reaction chamber 1 limited by shift(ing) ring 2, confinement ring 6 and head cover 4 Gas ions 12 are discharged required charge with providing main plasma 11, main plasma 11 are made to exist always.

During carrying out corona treatment to substrate, the higher first radio-frequency power power supply 7 of frequency and frequency compared with The second low radio-frequency power power supply 8 feed-in RF energy into reaction chamber 1 by the second electrode at pedestal 5, to Main plasma 11 is formed between the first electrode and the second electrode, to perform etching processing to substrate surface.In this process In, third radio-frequency power power supply 9 applies continuous radio-frequency power on the third electrode 21 in shift(ing) ring 2, with lower work( Rate formed at the fringe region of the reaction chamber 1 limited by shift(ing) ring 2, confinement ring 6 and head cover 4 and there is edge always etc. from Daughter 12.In this case, because edge plasma 12 exists always, charged particle(Electronics and ion)Understand to main etc. The regional movement of gas ions 11 is spread, when the first radio-frequency power power supply 7 or the second radio-frequency power power supply 8 are cut from high to low in pulse When changing, edge plasma 12 will provide main plasma 11 and discharge required charge, therefore main plasma will not occur The case where 11 extinguishing so that the main plasma 11 in reaction chamber 1 for performing etching technique also exists always, overcomes same Switching pulse stable discharge sex chromosome mosaicism is walked, ensures that the normal table of plasma etch process carries out.

Also, on the basis of third radio-frequency power power supply 9 applies continuous radio-frequency power on third electrode 21, frequency compared with In the first high radio-frequency power power supply 7 and the lower second radio-frequency power power supply of frequency 8, it is only necessary at least one to use pulse tune The radio-frequency power of system, and the pulse modulated radio-frequency power can be high-low power pulse, can also be switching pulse, It will not limit more.

In addition, since the marginal position in reaction chamber 1, internal third electrode and placement is arranged in shift(ing) ring 2 There is longer-distance interval, generally 10~20cm or so, so that edge plasma between substrate on pedestal 5 It not will produce Chong Die between 12 and main plasma 11, the shell impedance of two plasmas avoided to affect one another.

The method for carrying out cleaning using multifrequency pulse plasma processing apparatus provided by the present invention, including:It applies Add the second electrode at bottom base 5 in the first radio-frequency power power supply 7 and the second radio-frequency power power supply 8 to reaction chamber 1, to anti- It answers the cleaning that 1 inner top spray head 3 of chamber introduces to be excited with reaction gas, is formed between pedestal 5 and spray head 3 main etc. Gas ions 11, to be cleaned to the component in reaction chamber 1;Apply the third radio-frequency power power supply of continuous radio-frequency power simultaneously Third electrode 21 in 9 to shift(ing) ring 2, the cleaning introduced to 1 inner top spray head 3 of reaction chamber are swashed with reaction gas Hair, edge plasma 12 is formed at the fringe region of the reaction chamber 1 limited by shift(ing) ring 2, confinement ring 6 and head cover 4, with To the component positioned at marginal position in reaction chamber 1(Including shift(ing) ring 2, confinement ring 6, cover ring and head cover 4 etc.)It carries out Cleaning.

During being cleaned to reaction chamber 1, shift(ing) ring 2 can be cleaned to by third radio-frequency power power supply 9 Deng the component positioned at marginal position, deposited polymer is comprehensively and effectively removed so that the stability of reaction chamber 1 is improved.

Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (16)

1. a kind of multifrequency pulse plasma processing apparatus, including:
Reaction chamber(1);
The reaction chamber(1)Interior top is equipped with spray head(3), to reaction chamber(1)Interior introducing process use or clear The reaction gas washed;The spray head(3)Place is provided with first electrode;
The reaction chamber(1)Interior bottom is equipped with the pedestal of the carrying substrates in process(5);The pedestal(5)Place is set It is equipped with second electrode, and is applied with the first radio-frequency power power supply between the second electrode and first electrode(7)With the second radio frequency work( Rate power supply(8), be formed by rf electric field excitation introduce reaction chamber process with or cleaning reaction gas, in base Seat(5)And spray head(3)Between form main plasma(11);
It is characterized in that, the multifrequency pulse plasma processing apparatus also includes:
Shift(ing) ring(2), along reaction chamber(1)Inside sidewalls setting;
The shift(ing) ring(2)Inside it is vertically installed with third electrode(21), the third electrode(21)On be applied with using continuously penetrating The third radio-frequency power power supply of frequency power continued power(9), it is formed by rf electric field excitation and introduces at the technique of reaction chamber Reason with or cleaning reaction gas, in reaction chamber(1)By shift(ing) ring(2)The fringe region of restriction forms edge plasma Body(12).
2. multifrequency pulse plasma processing apparatus as described in claim 1, which is characterized in that the third radio-frequency power Power supply(9)Frequency >=13.56MHz, power is in the range of 300W~500W.
3. multifrequency pulse plasma processing apparatus as described in claim 1, which is characterized in that the third electrode(21) Along shift(ing) ring(2)Circumferencial direction setting, annularly.
4. multifrequency pulse plasma processing apparatus as claimed in claim 3, which is characterized in that the third electrode(21) Be placed on pedestal(5)On substrate between with 10~20cm horizontal interval so that main plasma(11)With edge etc. Gas ions(12)Between do not overlap.
5. multifrequency pulse plasma processing apparatus as described in claim 1, which is characterized in that first radio-frequency power Power supply(7)With the second radio-frequency power power supply(8)Power >=800W.
6. multifrequency pulse plasma processing apparatus as claimed in claim 5, which is characterized in that first radio-frequency power Power supply(7)With the second radio-frequency power power supply(8)At least one of use pulse modulated radio-frequency power, this is pulse modulated to penetrate Frequency power is high-low power pulse or switching pulse.
7. multifrequency pulse plasma processing apparatus as described in claim 1, which is characterized in that the reaction chamber(1) By the head cover positioned at top(4), it is located at the bottom wall of bottom end, and be connected to head cover(4)Side wall between bottom wall is constituted;Its In, the head cover(4), bottom wall and side wall be made of metal material and be grounded.
8. multifrequency pulse plasma processing apparatus as claimed in claim 7, which is characterized in that the reaction chamber(1)It is interior It further includes:
Focusing ring(10), it is located at the pedestal(5)The outside at edge;
Confinement ring(6), it is located at the focusing ring(10)Outside;
Cover ring is located at the confinement ring(6)Top.
9. a kind of processing method of multifrequency pulse plasma processing apparatus, which is characterized in that include:
Apply the first radio-frequency power power supply(7)With the second radio-frequency power power supply(8)To reaction chamber(1)Interior bottom base(5)Place Second electrode, to reaction chamber(1)Inner top spray head(3)The process of introducing is excited with reaction gas, in base Seat(5)With spray head(3)Between form main plasma(11), with to reaction chamber(1)Interior substrate performs etching processing;
Apply the third radio-frequency power power supply of continuous radio-frequency power simultaneously(9)To shift(ing) ring(2)Interior third electrode(21), to anti- Answer chamber(1)Inner top spray head(3)The process of introducing is excited with reaction gas, in reaction chamber(1)By moving Rotating ring(2)Edge plasma is formed at the fringe region of restriction(12), to provide main plasma(11)Electricity needed for electric discharge Lotus makes main plasma(11)Always exist.
10. the processing method of multifrequency pulse plasma processing apparatus as claimed in claim 9, which is characterized in that described Third radio-frequency power power supply(9)Frequency >=13.56MHz, power is in the range of 300W~500W.
11. the processing method of multifrequency pulse plasma processing apparatus as claimed in claim 9, which is characterized in that described Third electrode(21)Vertical implantation shift(ing) ring made of insulating materials(2)It is interior;And the third electrode(21)Along shift(ing) ring (2)Circumferencial direction setting, annularly.
12. the processing method of multifrequency pulse plasma processing apparatus as claimed in claim 11, which is characterized in that described Third electrode(21)Be placed on pedestal(5)On substrate between with 10~20cm horizontal interval so that main plasma (11)With edge plasma(12)Between do not overlap.
13. a kind of cleaning method of multifrequency pulse plasma processing apparatus, which is characterized in that include:
Apply the first radio-frequency power power supply(7)With the second radio-frequency power power supply(8)To reaction chamber(1)Interior bottom base(5)Place Second electrode, to reaction chamber(1)Inner top spray head(3)The cleaning of introducing is excited with reaction gas, in pedestal(5) With spray head(3)Between form main plasma(11), with to reaction chamber(1)Interior component is cleaned;
Apply the third radio-frequency power power supply of continuous radio-frequency power simultaneously(9)To shift(ing) ring(2)Interior third electrode(21), to anti- Answer chamber(1)Inner top spray head(3)The cleaning of introducing is excited with reaction gas, in reaction chamber(1)By shift(ing) ring (2)Edge plasma is formed at the fringe region of restriction(12), with to reaction chamber(1)The interior component positioned at marginal position It is cleaned.
14. the cleaning method of multifrequency pulse plasma processing apparatus as claimed in claim 13, which is characterized in that described Third radio-frequency power power supply(9)Frequency >=13.56MHz, power is in the range of 300W~500W.
15. the cleaning method of multifrequency pulse plasma processing apparatus as claimed in claim 13, which is characterized in that described Third electrode(21)Along shift(ing) ring(2)Circumferencial direction setting, annularly.
16. the cleaning method of multifrequency pulse plasma processing apparatus as claimed in claim 15, which is characterized in that described Third electrode(21)Be placed on pedestal(5)On substrate between with 10~20cm horizontal interval so that main plasma (11)With edge plasma(12)Between do not overlap.
CN201510699803.5A 2015-10-26 2015-10-26 Multifrequency pulse plasma processing apparatus and its processing method and cleaning method CN106611691B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510699803.5A CN106611691B (en) 2015-10-26 2015-10-26 Multifrequency pulse plasma processing apparatus and its processing method and cleaning method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510699803.5A CN106611691B (en) 2015-10-26 2015-10-26 Multifrequency pulse plasma processing apparatus and its processing method and cleaning method
TW105129646A TWI590294B (en) 2015-10-26 2016-09-12 Multi-frequency pulsed plasma processing device and its processing method and cleaning method

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CN106611691A CN106611691A (en) 2017-05-03
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1478291A (en) * 2000-09-28 2004-02-25 兰姆研究有限公司 Chamber configuration for confining plasma
CN1585997A (en) * 2001-11-13 2005-02-23 拉姆研究公司 Apparatus and method for improving etch rate uniformity
CN101426949A (en) * 2006-02-27 2009-05-06 朗姆研究公司 Integrated capacitive and inductive power sources for a plasma etching chamber
CN103227091A (en) * 2013-04-19 2013-07-31 中微半导体设备(上海)有限公司 The plasma processing apparatus
CN104217914A (en) * 2013-05-31 2014-12-17 中微半导体设备(上海)有限公司 The plasma processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1478291A (en) * 2000-09-28 2004-02-25 兰姆研究有限公司 Chamber configuration for confining plasma
CN1585997A (en) * 2001-11-13 2005-02-23 拉姆研究公司 Apparatus and method for improving etch rate uniformity
CN101426949A (en) * 2006-02-27 2009-05-06 朗姆研究公司 Integrated capacitive and inductive power sources for a plasma etching chamber
CN103227091A (en) * 2013-04-19 2013-07-31 中微半导体设备(上海)有限公司 The plasma processing apparatus
CN104217914A (en) * 2013-05-31 2014-12-17 中微半导体设备(上海)有限公司 The plasma processing apparatus

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