CN102154630A - Method for manufacturing plasma reaction chamber, method for manufacturing and equipment and parts of same and method for treating substrate - Google Patents
Method for manufacturing plasma reaction chamber, method for manufacturing and equipment and parts of same and method for treating substrate Download PDFInfo
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- CN102154630A CN102154630A CN 201010504191 CN201010504191A CN102154630A CN 102154630 A CN102154630 A CN 102154630A CN 201010504191 CN201010504191 CN 201010504191 CN 201010504191 A CN201010504191 A CN 201010504191A CN 102154630 A CN102154630 A CN 102154630A
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Abstract
The invention provides a method for manufacturing a plasma reaction chamber and parts thereof, plasma-enhanced chemical vapor deposition equipment and a method for treating substrate in the plasma-enhanced chemical vapor deposition equipment, wherein the parts in the reaction chamber have one or more surfaces during the process to be contacted with a plasma, the surfaces of the parts, which are contacted with the plasma, are roughly processed, so that the combination degree of polymer generated during the process and the surfaces of the parts can be enhanced. The method for manufacturing the plasma reaction chamber and parts thereof can prolong the equipment maintenance cycle, and reduces the equipment cleaning frequency, so that the process time can be increased, and the production efficiency is improved.
Description
Technical field
The present invention relates to technical field of plasma, particularly a kind of plasma reaction chamber and member manufacturing method thereof, plasma enhanced chemical vapor deposition equipment and the method for treatment substrate in this equipment.
Background technology
Plasma enhanced chemical vapor deposition (PECVD) equipment is widely used in semiconducter device, the solar cell making process, is particularly useful for depositing various films, for example silicon nitride film, transparent conductive film etc.In the crystal silicon solar energy battery manufacture craft, can deposit the antireflective silicon nitride film with plasma enhanced chemical vapor deposition equipment, especially in the manufacture craft of big area crystal silicon solar energy battery, PECVD equipment is used more extensive.
Fig. 1 is a kind of PECVD device structure synoptic diagram commonly used.As shown in Figure 1, have the electric pole plate 2 and the lower electrode plate 3 that are oppositely arranged in the chamber 1, wherein, electric pole plate 2 connects power supply (the not shown in the figures meaning out), lower electrode plate 3 ground connection.Process gas (as SiH4 and NH3 etc.) feeds chamber 1 by electric pole plate 2 after entering uniform flow chamber 5 uniform flows by loam cake 4.After adding radio frequency power, meeting (between electric pole plate 2 and the lower electrode 3) discharge generation plasma body in the reaction compartment of chamber 1, thereby at substrate 6 surface deposition silicon nitride films, but, plasma body also can be in chamber 1 the elsewhere silicon nitride film, after repeating repeatedly technology, other parts can get more and more such as the silicon nitride film on the electric pole plate 2 in the chamber 1, so that on the substrate 6 on lower electrode plate 3, influence quality product even cause the sheet that gives up because action of gravity is dropped.
Summary of the invention
The problem that the present invention solves provides a kind of plasma reaction chamber and member manufacturing method thereof, plasma enhanced chemical vapor deposition equipment and the method for treatment substrate in this equipment, can prolong the maintenance of the equipment cycle, reduce the equipment washing frequency, thereby increase the process time, enhance productivity.
For addressing the above problem, a kind of plasma reaction chamber of the present invention, parts in the described reaction chamber have one or more surfaces and contact with plasma body in technological process, surface that described parts contact with plasma is through roughening treatment, with the polymkeric substance that produces in the enhanced process process and the conjugation of described parts surface.
Described parts comprise one or more in electric pole plate, liner and the support plate.
The surfaceness of described parts is 3 microns to 50 microns.
Described roughening treatment comprise sandblast, AL melt penetrate, NI-AL melts to penetrate with NI-Cr and melts one or more that hit.
Accordingly, also a kind of plasma reaction chamber member manufacturing method of the present invention, the parts of described plasma reaction chamber have one or more surfaces that contact with plasma body in technological process, this method comprises: roughening treatment is carried out on the surface that described parts contact with plasma body, formed the parts with certain surface roughness.
Described parts are by comprising in electric pole plate, liner, support plate, plasma containment ring and the lower electrode plate one or more.
The surfaceness of described parts is 5 microns to 30 microns.
Described roughening treatment comprise sandblast, AL melt penetrate, NI-AL melts to penetrate with NI-Cr and melts one or more that hit.
In addition, the present invention also provides a kind of plasma enhanced chemical vapor deposition equipment, comprises the preheating cavity, reaction chamber, the cooling chamber that connect in turn, and described reaction chamber is as any described plasma reaction chamber of claim 1-4.
Accordingly, also provide a kind of in described chemical vapor depsotition equipment the method for treatment substrate, this method comprises the contacted step of the exposed surface of plasma body and substrate.
The contacted step of the exposed surface of described plasma body and substrate comprises:
Import substrate into reaction chamber through preheating cavity after being preheating to preset temp;
Process gas is imported described reaction chamber;
With the RF energy on process gas, in described reaction chamber, to form plasma body;
Utilize plasma body that the exposed surface of substrate is carried out deposit film;
Import the substrate behind the deposit film into cooling chamber from reaction chamber.
Described process gas comprises at least a material that forms polymkeric substance.
Technique scheme has the following advantages:
In the described plasma reaction chamber, through the surface coarsening processing element, because surfaceness improves before handling, to grab attached particulate ability and strengthen greatly, the polymer deposition that forms when plasma reaction is during on its surface, can strengthen polymkeric substance and surperficial sticking power, in follow-up repeatedly technological process, be not easy to come off,, reduce cleaning frequency so can prolong the cycle of equipment washing, and then the process time of improving equipment, enhance productivity.
Because parts are all handled through surface coarsening, so polymkeric substance is difficult drop-off in technological process, the cleaning interval of equipment is than having prolonged 12 times before, and, owing to only clean the loose part of removing polymkeric substance, do not need the polymkeric substance on complete removing component surface, therefore scavenging period also reduces to original 1/5th, once need 5 minutes such as original cleaning, only needed get final product in 1 minute now, thereby improved the efficient of equipment.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is a kind of PECVD device structure synoptic diagram commonly used;
Fig. 2 is the structural representation of embodiment of the invention ionic medium precursor reactant chamber;
Fig. 3 is the surface topography photo of process roughening treatment post plasma reaction chamber parts in the embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Set forth a lot of details in the following description so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with synoptic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of indication device structure can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Be outstanding characteristics of the present invention, do not provide in the accompanying drawing and the inevitable directly related part of inventive point of the present invention, remote plasma source, radio-frequency power supply etc.
Just as described in the background section, present plasma chamber chamber component exists in the technological process number of polymers to come off and easily causes degradation shortcoming under the process substrates quality, based on this, the present invention proposes a kind of plasma reaction chamber and component manufacturing method thereof, also propose a kind of plasma enhanced chemical vapor deposition equipment simultaneously and adopt the method for treatment substrate in the described equipment, can prolong the equipment washing cycle, reduce scavenging period, and then enhance productivity.Introduce a specific embodiment of the present invention in detail below in conjunction with accompanying drawing.
The structural representation of the plasma reaction chamber that Fig. 2 provides for present embodiment comprises:
Electric pole plate that is oppositely arranged 12 and lower electrode plate 13 in the cavity 11;
The support plate 16 that is provided with on the described lower electrode plate 13, this support plate 16 is used for carrying substrates 6;
Wherein, the zone between described electric pole plate 12, lower electrode plate 13 and the liner 17 forms the state space of plasma body.Electric pole plate 12 connects radio-frequency power supplies (among the figure for illustrating), lower electrode plate 13 ground connection.Process gas (as SiH4 and NH3 etc.) feeds cavity 11 by electric pole plate 12 after entering uniform flow chamber 15 uniform flows by loam cake 14.After introducing radio frequency power by radio-frequency power supply, ionization takes place and produces plasma body in process gas in the state space of cavity 11, by physical-chemical reaction at substrate 6 surface deposition retes, silicon nitride film for example.
Parts such as above-described electric pole plate 12, support plate 16, lower electrode plate 13 and liner 17 have one or more surfaces that contact with plasma body in technological process.The surface of described parts therefore also can deposited polymer in technological process owing to contacting closely with plasma body.
In the present embodiment, the surface that described parts contact with plasma body is through roughening treatment.Described roughening treatment can be penetrated for sandblast, AL melt, NI-AL melts and penetrates or NI-Cr melts and penetrates, and also can be the multiple combination in the above-mentioned treatment process.Through roughening treatment, the surfaceness of described parts is 3 to 50 microns, the surface topography photo through the roughening treatment back part as shown in Figure 3.
Through the surface coarsening processing element, because surfaceness improves before handling, grabbing attached particulate ability strengthens greatly, the polymer deposition that forms when plasma reaction can strengthen the conjugation of polymkeric substance and described parts surface during on its surface, is not easy to come off in follow-up repeatedly technological process, so can prolong the cycle of equipment washing, reduce cleaning frequency, and then improve the process time of equipment, enhance productivity.
Because parts are all handled through surface coarsening, polymkeric substance improves the sticking power of parts surface, difficult drop-off in technological process, 12 times have been prolonged before the equipment washing period ratio, clean once after the back cleaning once shortens to per 60 technologies end such as finishing by original per 5 technologies, and, clean the loose part of only removing polymer surfaces, need not remove whole polymkeric substance, the polymkeric substance of those and parts surface good attachment does not need to remove, the purpose of removing polymkeric substance is in order to prevent that polymkeric substance breaks away from the substrate quality that causes processing from parts surface and descends, so those are not easy to come off with the polymkeric substance that the surface is adhered to effectively, thus needn't remove fully from parts surface, so scavenging period reduces, such as reducing to 1 minute by original 5 minutes, thereby improved the process time of equipment.
Described parts are not limited to the parts enumerated among the above embodiment, can also comprise for example plasma containment ring 18, electric pole plate mounting block 19 (referring to Fig. 2).
The present invention also provides a kind of plasma reaction chamber member manufacturing method, below describes in detail.
Described manufacture method comprises: roughening treatment is carried out on surface on the article on plasma precursor reactant chamber part, that contact with plasma body, forms the parts with certain surface roughness.
Concrete, described parts comprise one or more in electric pole plate, liner, support plate, plasma containment ring and the lower electrode plate, but are not limited thereto, and also can be the miscellaneous part in the plasma reaction chamber.The surface that electric pole plate contacts with plasma body is mainly towards the surface of support plate, and the surface that liner contacts with plasma body is mainly towards the surface of cavity inboard, and the surface that support plate contacts with plasma body is mainly the surface towards electric pole plate.
Above-mentioned parts are placed sandblast or melt penetrate processing unit, itself and plasma contact surface are carried out roughening treatment, its surfaceness is improved, to strengthen grabbing attached particulate ability.Preferably, the surfaceness of described parts is 5 microns to 30 microns.
Preferably, described roughening treatment comprise sandblast, AL melt penetrate, NI-AL melts to penetrate with NI-Cr and melts one or more that hit, such treatment process can guarantee that the surfaceness of parts is enough to the polymkeric substance that produces in the enhanced process process and the conjugation of described parts surface.
The present invention also provides a kind of plasma enhanced chemical vapor deposition equipment, and this equipment comprises preheating cavity, reaction chamber, the cooling chamber that connects in turn.Arbitrary plasma reaction chamber that described reaction chamber provides for the foregoing description.
Wherein, described preheating cavity is used for before plasma-treating technology substrate to be processed being heated in advance, so that it reaches design temperature; Described reaction chamber is used for substrate is carried out Cement Composite Treated by Plasma, and described cooling chamber is used for the substrate through Cement Composite Treated by Plasma is cooled off.
The embodiment of the invention also provide a kind of in above-mentioned chemical vapor depsotition equipment the method for treatment substrate, this method comprises the contacted step of the exposed surface of plasma body and substrate, meanwhile, plasma body also contacts the interior parts surface of reaction chamber of chemical vapor depsotition equipment.Deposition process with silicon nitride film in the manufacture of solar cells technology is the processing method for substrate that example describes present embodiment in detail below.
Substrate is placed on the support plate, be conveyed into reaction chamber after the process preheating cavity is heated to preset temp, have the electric pole plate and the lower electrode plate that are oppositely arranged in the reaction chamber, wherein, electric pole plate connects radio-frequency power supply, lower electrode plate ground connection.The support plate that substrate is housed is placed on the lower electrode plate, and process gas (as SiH4 and NH3 etc.) is by being fed in the reaction chamber by electric pole plate behind the flow-harmonization device uniform flow; Described process gas comprises at least a material that forms polymkeric substance.
After adding radio frequency power by radio-frequency power supply, discharge generation plasma body between electric pole plate that can be in reaction chamber and the lower electrode plate, described plasma body contacts with the exposed surface of substrate, thereby in the substrate surface silicon nitride film.
But, plasma body also can be simultaneously with reaction chamber in parts surfaces such as electric pole plate, support plate, plasma containment ring and lower electrode plate contact the generation polymkeric substance.Arbitrary plasma reaction chamber that described reaction chamber provides for previous embodiment, the surface that wherein above-mentioned parts contact with plasma body is through roughening treatment; Parts in the reaction chamber have one or more surfaces that contact with plasma body, and described polymkeric substance is in technological process on the surface attached to described parts.
After technology is finished, import the substrate behind the deposit film into cooling chamber from reaction chamber and cool off, be cooled to design temperature after, substrate is taken out, support plate is passed the processing that preheating cavity carries out the next batch substrate back.
Repeat repeatedly the treatment process of substrate, the polymkeric substance of the surface attachment that the parts in the reaction chamber contact with plasma body also can get more and more, for avoiding polluting substrate, in continuous flow procedure, after repeatedly the silicon nitride film depositing operation is finished, time-out transmits substrate in reaction chamber, and need carry out plasma clean to the parts in the reaction chamber.In the present embodiment, because parts are all handled through surface coarsening, polymkeric substance improves the sticking power of parts surface, in technological process than the conventional art difficult drop-off, therefore can reduce the cleaning frequency, for example, clean the frequency and once shorten to per 60 technologies cleaning once by original per 5 technologies cleaning.
Concrete, can adopt remote plasma to clean, also can adopt remote plasma cleaning and radio-frequency plasma to clean the mode that combines.Do not load substrate in the reaction chamber, feed purge gas (for example NF3) and also apply radio frequency power and produce plasma body, after the loose part that plasma body will be adsorbed on the polymkeric substance of parts surface is removed, then can finish to clean; In the present embodiment, because parts are all through the surface coarsening processing, in the plasma clean process, needn't remove the polymkeric substance that is deposited on parts surface fully, get final product and only need remove part relatively more loose in the polymkeric substance, rest parts and parts surface adhere firmly can not pollute substrate, so, scavenging period reduces, and for example can reduce to 1 minute by original 5 minutes, and technology was recovered 5 minutes, 6 minutes altogether, thus the process time of having improved complete machine.
As seen, above-mentioned chemical vapor depsotition equipment reaches the method for treatment substrate in this equipment, prolongs the cycle of equipment washing, reduces cleaning frequency, and then improves the process time of equipment, enhances productivity.
Plasma arc processing apparatus in the foregoing description is preferably the PECVD device, also can be other plasma arc processing apparatus, Ecr plasma processing unit (plant) for example, inductively coupled plasma processing unit (plant) etc.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (12)
1. plasma reaction chamber, parts in the described reaction chamber have one or more surfaces and contact with plasma body in technological process, it is characterized in that, surface that described parts contact with plasma is through roughening treatment, with the polymkeric substance that produces in the enhanced process process and the conjugation of described parts surface.
2. plasma reaction chamber according to claim 1 is characterized in that described parts comprise one or more in electric pole plate, liner and the support plate.
3. plasma reaction chamber according to claim 1 and 2 is characterized in that, the surfaceness of described parts is 3 microns to 50 microns.
4. plasma reaction chamber according to claim 1 is characterized in that, described roughening treatment comprise sandblast, AL melt penetrate, NI-AL melts to penetrate with NI-Cr and melts one or more that hit.
5. plasma reaction chamber member manufacturing method, the parts of described plasma reaction chamber have one or more surfaces that contact with plasma body in technological process, it is characterized in that, this method comprises: roughening treatment is carried out on the surface that described parts contact with plasma body, formed the parts with certain surface roughness.
6. plasma reaction chamber member manufacturing method according to claim 5 is characterized in that, described parts are by comprising in electric pole plate, liner, support plate, plasma containment ring and the lower electrode plate one or more.
7. according to claim 5 or 6 described plasma reaction chamber member manufacturing method, it is characterized in that the surfaceness of described parts is 5 microns to 30 microns.
8. plasma reaction chamber member manufacturing method according to claim 5 is characterized in that, described roughening treatment comprise sandblast, AL melt penetrate, NI-AL melts to penetrate with NI-Cr and melts one or more that hit.
9. a plasma enhanced chemical vapor deposition equipment comprises the preheating cavity, reaction chamber, the cooling chamber that connect in turn, it is characterized in that described reaction chamber is as any described plasma reaction chamber of claim 1-4.
10. the method for a treatment substrate in chemical vapor depsotition equipment according to claim 9 is characterized in that, this method comprises the contacted step of the exposed surface of plasma body and substrate.
11. the method for treatment substrate according to claim 10 is characterized in that, the contacted step of the exposed surface of described plasma body and substrate comprises:
Import substrate into reaction chamber through preheating cavity after being preheating to preset temp;
Process gas is imported described reaction chamber;
With the RF energy on process gas, in described reaction chamber, to form plasma body;
Utilize plasma body that the exposed surface of substrate is carried out deposit film;
Import the substrate behind the deposit film into cooling chamber from reaction chamber.
12. the method for treatment substrate according to claim 11 is characterized in that, described process gas comprises at least a material that forms polymkeric substance.
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| CN104746045A (en) * | 2013-12-26 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chemical vapor deposition method and device |
| CN110923644A (en) * | 2020-02-12 | 2020-03-27 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for reactive sputtering |
| CN111364027A (en) * | 2018-12-25 | 2020-07-03 | 广东聚华印刷显示技术有限公司 | Atomic layer deposition chamber component, preparation method thereof and atomic layer deposition equipment |
| CN113130284A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| WO2022152023A1 (en) * | 2021-01-14 | 2022-07-21 | 营口金辰机械股份有限公司 | Plasma enhanced chemical vapor deposition device and use method therefor |
| WO2022152020A1 (en) * | 2021-01-14 | 2022-07-21 | 营口金辰机械股份有限公司 | Bearing apparatus, and plasma-enhanced chemical vapor deposition device and method for using same |
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| WO2022152020A1 (en) * | 2021-01-14 | 2022-07-21 | 营口金辰机械股份有限公司 | Bearing apparatus, and plasma-enhanced chemical vapor deposition device and method for using same |
| WO2023284045A1 (en) * | 2021-07-16 | 2023-01-19 | 长鑫存储技术有限公司 | Semiconductor manufacturing apparatus, and method for removing deposit in chamber of semiconductor manufacturing apparatus |
| WO2023216318A1 (en) * | 2022-05-12 | 2023-11-16 | 深圳市华星光电半导体显示技术有限公司 | Electrode fixing assembly and dry etching apparatus |
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Application publication date: 20110817 |