CN103572253A - Reaction cavity and semiconductor device with same - Google Patents
Reaction cavity and semiconductor device with same Download PDFInfo
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- CN103572253A CN103572253A CN201210268184.0A CN201210268184A CN103572253A CN 103572253 A CN103572253 A CN 103572253A CN 201210268184 A CN201210268184 A CN 201210268184A CN 103572253 A CN103572253 A CN 103572253A
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Abstract
The invention provides a reaction cavity which comprises: a cavity with a process cavity in which an upper electrode and a lower electrode spaced apart from each other in an up-and-down direction are disposed; a remote plasma source; a cleaning gas pipeline with an upper end connected with the remote plasma source and a lower end extending into the process cavity; and a valve disposed on the cleaning gas pipeline and near the lower end of the cleaning gas pipeline. The reaction cavity according to embodiments of the invention prevents dust generation due to striking of the inside of the cleaning gas pipeline, and reduces fluorinion loss. The invention also provides a semiconductor device with the reaction cavity.
Description
Technical field
The present invention relates to microelectronics technology, especially relate to a kind of reaction chamber and there is its semiconductor devices.
Background technology
In solar battery sheet production process, there is a procedure to be called and prepare antireflective coating, the technique adopting is plasma enhanced chemical vapor deposition (PECVD), this technique can produce a large amount of silicon nitride dust in reaction process, these dust are attached on chamber wall and battery lead plate, along with the increase of Dust Capacity, part dust can peel off, and falls the quality that will affect antireflective coating on product.Therefore present most of PECVD equipment has increased RPS(remote plasma source) cleaning function, principle is by RPS, to produce a large amount of fluorions to react with the silicon nitride being attached on chamber wall and battery lead plate, the silicon tetrafluoride gas generating, is taken away by air pump.
Existing PECVD equipment is provided with the vitrified pipe of insulation between RPS outlet pipe and RF lid, thereby guarantees RPS and the same electromotive force of ground lid.During technique, connect being connected with ground lid of isolated pipe of RPS and top electrode current-sharing chamber above, cover and be connected below with RF, pass into after radio frequency power, the top and bottom of isolated pipe are equivalent to two electrodes.Identical with the build-up of luminance principle between RF lid and lower electrode, now process gas is known from experience and is entered isolated pipe, and isolated pipe inside also can build-up of luminance and plate silicon nitride, and present solution is the length that increases isolated pipe, and electric field is died down.But can increase like this size of equipment, what the longer fluorion of pipeline was decayed simultaneously is more serious, has reduced the utilization ratio of RPS.
Summary of the invention
The present invention is intended at least solve one of technical problem existing in prior art.
For this reason, one object of the present invention is to propose a kind of reaction chamber that can avoid producing in pipe blow-through dust.
Another object of the present invention is to propose a kind of semiconductor devices with above-mentioned reaction chamber.
Reaction chamber according to first aspect present invention embodiment, comprising: cavity, in described cavity, there is process cavity, and in described process cavity, be provided with isolated along the vertical direction top electrode and lower electrode; Remote plasma source; Purge gas pipeline, the upper end of described purge gas pipeline is connected with described remote plasma source and the lower end of described purge gas pipeline is stretched in described process cavity; And valve, described valve is located on described purge gas pipeline and the lower end of contiguous described purge gas pipeline; Wherein, described valve is used for stoping process gas to enter described purge gas pipeline.
According to the reaction chamber of the embodiment of the present invention, by valve being set on described purge gas pipeline, before technique build-up of luminance, valve is opened, and process cavity is vacuumized, and shut-off valve then, then carries out art breading to passing into process gas in process cavity.Due to during passing into process gas and art breading, valve cuts out, process gas can not enter in purge gas pipeline, therefore in purge gas pipeline, can not produce dust, can on the inwall of purge gas pipeline, not form silicon nitride yet, improve technological effect, guaranteed the quality of product, and do not need periodic cleaning purge gas pipeline, the uptime of having improved reaction chamber, the size of reaction chamber is little.
Alternatively, described valve is push-pull valve, butterfly valve or angle valve.
Alternatively; reaction chamber also comprises shielding gas source; described shielding gas source is connected with described purge gas pipeline, for pass into the not shielding gas of build-up of luminance in the part between described valve and described remote plasma source to described purge gas pipeline when described valve cuts out.
By shielding gas source is set, when cutting out, valve passes into the not shielding gas of build-up of luminance in purge gas pipeline, can further reduce the possibility that produces dust and form silicon nitride on the inwall of purge gas pipeline in purge gas pipeline.
Alternatively, described shielding gas source is connected with described purge gas pipeline by described remote plasma source.
Alternatively, described shielding gas is nitrogen.
Further, described purge gas pipeline comprises yard piping and earthenware duct, and the upper end of described yard piping is connected with described remote plasma source and the lower end of described yard piping is connected with described earthenware duct, and described earthenware duct is positioned at described process cavity.
Further, described earthenware duct outside is arranged with isolated flange, and the lower end of described yard piping is provided with ring flange, and described earthenware duct is connected with described yard piping with described ring flange by described isolated flange.
Further, described cavity comprises upper casing; Lower casing, described lower casing is connected to limit described process cavity with described upper casing with described upper casing; With RF lid, it is interior so that described process cavity is divided into epicoele and cavity of resorption that described RF lid is located at described process cavity, and wherein said top electrode is located at described RF lid below to limit current-sharing chamber with described RF lid, and the lower end of described purge gas pipeline is communicated with described current-sharing chamber.
Further, the lower end of described purge gas pipeline is connected with described RF lid by flange.
According to the semiconductor devices of second aspect present invention embodiment, comprise according to the reaction chamber of first aspect present invention embodiment and vacuum extractor, under the state of opening for described valve, described process cavity and described purge gas pipeline are vacuumized.For example, described semiconductor devices is PECVD equipment.
According to the semiconductor devices of the embodiment of the present invention, can avoid depositing dust in purge gas pipeline, reduced the loss of the fluorion of remote plasma source generation, improved the cleaning performance of reaction chamber, improved the quality of product.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination obviously and is easily understood becoming the description of embodiment, wherein:
Fig. 1 is according to the schematic diagram of the reaction chamber of the embodiment of the present invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be to be also electrically connected to; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can particular case understand above-mentioned term concrete meaning in the present invention.
Below with reference to Fig. 1, describe according to the reaction chamber 100 of the embodiment of the present invention, this reaction chamber 100 can be for carrying out art breading to the product being placed in reaction chamber 100.
As shown in Figure 1, according to the reaction chamber 100 of the embodiment of the present invention, comprise: cavity 1, remote plasma source 2, purge gas pipeline 3 and valve 4, valve 4 is for stoping process gas to enter described purge gas pipeline.Wherein, in cavity 1, there is process cavity 10, in process cavity 10, be provided with isolated along the vertical direction top electrode 11 and lower electrode 12.The upper end of purge gas pipeline 3 is connected with remote plasma source 2 and the lower end of purge gas pipeline 3 is stretched in process cavity 10.Valve 4 is located on purge gas pipeline 3 and the lower end of contiguous purge gas pipeline 3.Alternatively, valve is push-pull valve, butterfly valve or angle valve.By the vaccum-pumping equipment in existing installation (scheming not shown), for to vacuumizing in process cavity 10, vaccum-pumping equipment is known to ordinary skill in the art, and for example vacuum pump, is not described in detail here.
While carrying out art breading in the process cavity of reaction chamber 100, first before the interior build-up of luminance of process cavity 10, at top electrode 11 and lower electrode 12, apply before radio frequency power, valve 4 is opened, vaccum-pumping equipment vacuumizes process cavity 10, then valve 4 cuts out, in process cavity 10, pass into process gas, then to top electrode 11 and lower electrode 12, apply radio frequency power so that the product being placed in process cavity 10 is carried out to art breading, in process treatment process, the interior build-up of luminance of process cavity 10 and produce a large amount of silicon nitride dust.After art breading, open valve 4, remote plasma source 2 to passing into a large amount of fluorions in process cavity 10 and silicon nitride dust reacts, generates silicon tetrafluoride gas by purge gas pipeline 3, last vaccum-pumping equipment by silicon tetrafluoride gas from the interior extraction of process cavity 10.
According to the reaction chamber 100 of the embodiment of the present invention, by valve 4 is set on purge gas pipeline 3, before technique build-up of luminance, valve 4 is opened, and process cavity 10 is vacuumized, and then shut-off valve 4, then to passing into process gas in process cavity 10, carries out art breading.Due to during passing into process gas and art breading, valve 4 cuts out, process gas cannot enter in purge gas pipeline 3, therefore in purge gas pipeline 3, can not produce dust, can on the inwall of purge gas pipeline 3, not form silicon nitride, improve technological effect, guarantee the quality of product yet, and do not need periodic cleaning purge gas pipeline 3, improved the uptime of reaction chamber 100.And due to without extending pipe blow-through, so the size of reaction chamber 100 is little.
Further; reaction chamber 100 also comprises shielding gas source (scheming not shown); shielding gas source is connected with purge gas pipeline 3, for pass into the not shielding gas of build-up of luminance in the part between valve 4 and remote plasma source 2 to purge gas pipeline 3 when valve 4 cuts out.Alternatively, shielding gas can be nitrogen.By shielding gas source is set, when cutting out, valve 4 can in purge gas pipeline 3, pass into the not shielding gas of build-up of luminance, the possibility that can further reduce the interior generation dust of purge gas pipeline 3 and form silicon nitride on the inwall of purge gas pipeline 3.
Alternatively, shielding gas source can be connected with purge gas pipeline 3 by remote plasma source 2.In the case, when passing into shielding gas in purge gas pipeline 3, remote plasma source 2 can not produce plasma body to the interior conveying of purge gas pipeline 3.
According to some embodiments of the present invention, as shown in Figure 1, purge gas pipeline 3 comprises yard piping 30 and earthenware duct 31, the upper end of yard piping 30 is connected with remote plasma source 2 and the lower end of yard piping 30 is connected with earthenware duct 31, earthenware duct 31 is positioned at process cavity 10, thereby guarantees purge gas pipeline 3 and the same electromotive force of cavity 1.
Electric field is died down reduce build-up of luminance to compare by extending earthenware duct with existing reaction chamber, according to the reaction chamber 100 of the embodiment of the present invention without extending earthenware duct 31, thereby equipment size is little, fluorion decay is light, cleaning performance is good.
As shown in Figure 1, in example of the present invention, earthenware duct 31 outsides are arranged with isolated flange 311, and the lower end of yard piping 30 is provided with ring flange 301, and earthenware duct 31 is connected with yard piping 30 with ring flange 301 by isolated flange 311.Thereby, make easy to connect and fixation between earthenware duct 31 and yard piping 30.
As shown in Figure 1, according to specific embodiments more of the present invention, cavity 1 comprises: upper casing 103, lower casing 104 and RF lid 105, wherein, lower casing 104 is connected to limit process cavity 10 with upper casing 103 with upper casing 103.RF lid 105 is located in process cavity 10 process cavity 10 is divided into epicoele 101 and cavity of resorption 102.Wherein top electrode 11 is located at RF and covers 105 belows to limit current-sharing chamber 106 with RF lid 105, and the lower end of purge gas pipeline 3 is communicated with current-sharing chamber 106.Thereby cavity 1 has advantages of simple in structure.
Further, the lower end of purge gas pipeline 3 is connected with RF lid 105 by flange.Thus, purge gas pipeline 3 is installed firm and convenient.
In the example of Fig. 1, remote plasma source 2 is located at the top of upper casing 103, remote plasma source 2 communicates with cavity of resorption 102 by purge gas pipeline 3, the upper end of yard piping 30 is connected with remote plasma source 2, and the lower end of yard piping 30 is connected with earthenware duct 31, and earthenware duct 31 is located in epicoele 101, the lower end of earthenware duct 31 is connected with valve 4, valve 4 is connected with RF lid 105 by flange, and certainly, the present invention is not limited to this.
According to the reaction chamber 100 of the embodiment of the present invention, by the bottom at earthenware duct 31, valve 4 is set, before technique build-up of luminance, valve 4 is opened, process cavity 10 is vacuumized, thereby the gas in purge gas pipeline 3 is also pumped, then shut-off valve 4, can in purge gas pipeline 3, pass into the not shielding gas of build-up of luminance, then to passing into process gas in process cavity 10, carry out art breading, thereby, guaranteed during passing into process gas and art breading, process gas can not enter in purge gas pipeline 3, avoid the interior build-up of luminance of purge gas pipeline 3 and produced dust, avoided the fluorion loss causing due to the interior deposition dust of purge gas pipeline 3, thereby improved the cleaning performance of reaction chamber 100, and do not need routine cleaning purge gas pipeline 3, improved the uptime of reaction chamber 100.
According to the semiconductor devices of second aspect present invention embodiment, comprise according to the reaction chamber 100 of first aspect present invention embodiment and vacuum extractor (not shown), under the state that described vacuum extractor is opened for described valve, described process cavity and described purge gas pipeline are vacuumized.For example, semiconductor devices can be PECVD equipment.According to other formations of the semiconductor devices of the embodiment of the present invention and operation, be all known, be not described in detail here.
According to the semiconductor devices of the embodiment of the present invention, can avoid at the interior generation of purge gas pipeline 3 and deposition dust, reduced the loss of the fluorion of remote plasma source 2 generations, improved the cleaning performance of reaction chamber 100, improved the quality of product, and equipment size is little, normal working hours is long, has improved efficiency.
In the description of this specification sheets, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or feature can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: in the situation that not departing from principle of the present invention and aim, can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.
Claims (11)
1. a reaction chamber, is characterized in that, comprising:
Cavity, has process cavity in described cavity, is provided with isolated along the vertical direction top electrode and lower electrode in described process cavity;
Remote plasma source;
Purge gas pipeline, the upper end of described purge gas pipeline is connected with described remote plasma source and the lower end of described purge gas pipeline is stretched in described process cavity; With
Valve, described valve is located on described purge gas pipeline and the lower end of contiguous described purge gas pipeline;
Wherein, described valve is used for stoping process gas to enter described purge gas pipeline.
2. reaction chamber according to claim 1, is characterized in that, described valve is push-pull valve, butterfly valve or angle valve.
3. reaction chamber according to claim 1; it is characterized in that; also comprise shielding gas source; described shielding gas source is connected with described purge gas pipeline, for pass into the not shielding gas of build-up of luminance in the part between described valve and described remote plasma source to described purge gas pipeline when described valve cuts out.
4. reaction chamber according to claim 3, is characterized in that, described shielding gas source is connected with described purge gas pipeline by described remote plasma source.
5. reaction chamber according to claim 3, is characterized in that, described shielding gas is nitrogen.
6. reaction chamber according to claim 1, it is characterized in that, described purge gas pipeline comprises yard piping and earthenware duct, the upper end of described yard piping is connected with described remote plasma source and the lower end of described yard piping is connected with described earthenware duct, and described earthenware duct is positioned at described process cavity.
7. reaction chamber according to claim 6, it is characterized in that, described earthenware duct outside is arranged with isolated flange, and the lower end of described yard piping is provided with ring flange, and described earthenware duct is connected with described yard piping with described ring flange by described isolated flange.
8. according to the reaction chamber described in any one in claim 1-7, it is characterized in that, described cavity comprises:
Upper casing;
Lower casing, described lower casing is connected to limit described process cavity with described upper casing with described upper casing; With
RF lid, it is interior so that described process cavity is divided into epicoele and cavity of resorption that described RF lid is located at described process cavity,
Wherein said top electrode is located at described RF lid below to limit current-sharing chamber with described RF lid, and the lower end of described purge gas pipeline is communicated with described current-sharing chamber.
9. reaction chamber according to claim 8, is characterized in that, the lower end of described purge gas pipeline is connected with described RF lid by flange.
10. a semiconductor devices, is characterized in that, comprising:
Reaction chamber described in any one in 1-9 as requested; And
Vacuum extractor, under the state of opening, vacuumizes described process cavity and described purge gas pipeline for described valve.
11. semiconductor devicess according to claim 10, is characterized in that, described semiconductor devices is PECVD equipment.
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| CN112259432A (en) * | 2020-09-18 | 2021-01-22 | 中国科学院微电子研究所 | Remote plasma delivery pipe and remote plasma processing equipment |
| CN116005110A (en) * | 2022-12-31 | 2023-04-25 | 常州瑞择微电子科技有限公司 | Base material protective film forming device |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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