CN108728820B - Gas mixing structure, process chamber and semiconductor processing equipment - Google Patents
Gas mixing structure, process chamber and semiconductor processing equipment Download PDFInfo
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- CN108728820B CN108728820B CN201710257153.8A CN201710257153A CN108728820B CN 108728820 B CN108728820 B CN 108728820B CN 201710257153 A CN201710257153 A CN 201710257153A CN 108728820 B CN108728820 B CN 108728820B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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Abstract
The invention provides a gas mixing structure which is used for providing gas for a cavity and comprises a plurality of gas inlet pipelines and at least one gas outlet pipeline, wherein the plurality of gas inlet pipelines are connected with a plurality of gas sources in a one-to-one correspondence mode, the gas outlet pipelines are connected with gas inlets of the cavity, the gas mixing structure also comprises a mixing cavity, the mixing cavity is provided with a gas mixing space, and the mixing cavity is respectively connected with the gas inlet pipelines and the gas outlet pipelines so that the gas of the plurality of gas sources is mixed in the gas mixing space and then is output to the gas inlets of the cavity through the gas outlet pipelines. The invention also provides a process chamber and semiconductor processing equipment. The gas mixing structure, the process chamber and the semiconductor processing equipment can enable gas to be mixed uniformly and cannot block pipelines.
Description
Technical Field
The invention belongs to the technical field of microelectronic processing, and particularly relates to a gas mixing structure, a process chamber and semiconductor processing equipment.
Background
The LED PECVD equipment is mainly used for depositing and coating films on the surfaces of sapphire or silicon wafers and depositing SiN/SiO and the like on the surfaces of the wafers. The specific process is as follows: usually by reacting SiH4And N2And mixing O and other gases in proportion, introducing the mixture into the reaction chamber, loading radio frequency voltage to perform glow starting excitation to form plasma, and finally depositing the SiN/SiO film on the wafer. It should be emphasized that gas mixing is one of the critical steps of LED PECVD before reaction, and whether the gas mixing is sufficient also determines whether the whole furnace film thickness and refractive index uniformity within a single furnace batch meet the requirements.
FIG. 1 is a schematic view of a gas mixing structure in the prior art, referring to FIG. 1, SiH4And N2The two paths of O gas respectively pass through front end pneumatic valves (V11, V21), mass flow controllers (MFC1, MFC2) and rear end pneumatic valves (V12, V22) in the gas box Gasbox to be transmitted along respective gas inlet pipelines, and when the O gas reaches the upper part of a gas inlet of the cavity, the O gas is mixed in a common gas mixing pipeline and then directly enters the gas inlet of the cavity to reach the inside of the cavity.
FIG. 2 is a schematic view of another gas mixing structure in the prior art, please refer to FIG. 2, SiH4And N2Two paths of O gas respectively pass through front end pneumatic valves (V11, V21), mass flow controllers (MFC01, MFC02) and rear end pneumatic valves (V12, V22) in the gas box Gasbox in sequence, are directly combined into one in the gas box Gasbox, are mixed in a common gas mixing pipeline and then directly enter a gas inlet of the cavity to reach the inside of the cavity.
The following problems are found in practical application by using the gas mixing structure described in fig. 1 and 2:
first, with the gas mixing structure shown in fig. 1, since the gas mixing pipe is short, the gas is not uniformly mixed in the short pipe.
Secondly, with the gas mixing structure shown in fig. 2, compared with fig. 1, although the gas mixing pipeline is increased and the problem of uneven gas mixing is improved to a certain extent, the gas mixing pipeline is easy to generate sediment in a long pipeline, and the pipeline is easy to block.
Therefore, there is a need for a gas mixing device that can mix uniformly without blocking the pipeline.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a gas mixing structure, a process chamber and semiconductor processing equipment, which can not only uniformly mix gas, but also can not block a pipeline.
In order to solve one of the above problems, the present invention provides a gas mixing structure for providing gas to a chamber, comprising a plurality of gas inlet pipelines and at least one gas outlet pipeline, wherein the plurality of gas inlet pipelines are connected with a plurality of gas sources in a one-to-one correspondence, the gas outlet pipelines are connected with gas inlets of the chamber, the gas mixing structure further comprises a mixing cavity, the mixing cavity is provided with a gas mixing space,
the mixing cavity is respectively connected with the gas inlet pipeline and the gas outlet pipeline, so that the gases of the gas sources are mixed in the gas mixing space and then output to the gas inlet of the cavity through the gas outlet pipeline.
Preferably, the mixing chamber comprises an air inlet plate,
the air inlet plate comprises a plurality of annular air inlet pipelines which are correspondingly connected with the multi-path air inlet pipelines one by one;
and a plurality of air outlet holes are arranged on the annular air inlet pipeline at intervals and used for guiding the air in the annular air inlet pipeline into the air mixing space.
Preferably, the plurality of air outlet holes are uniformly arranged along the circumferential direction of the annular air inlet pipeline at intervals.
Preferably, the annular air inlet pipes corresponding to the air inlet pipes are sequentially nested on the same plane.
Preferably, the plurality of annular air inlet pipelines corresponding to the plurality of air inlet pipelines are arranged at intervals in a stacking mode, and the flowing directions of the output gases are the same.
Preferably, the mixing chamber further comprises a gas mixing plate,
the gas mixing plate is arranged in the mixing cavity and is arranged along the direction of blocking the flow direction of the gas output by the annular gas inlet pipeline;
the gas mixing plate comprises a plurality of blades and a central body;
the blades are arranged at intervals and fixedly along the circumferential direction of the central body, and the inclination directions of the blades are the same.
Preferably, the number of the gas mixing plates is multiple;
the plurality of gas mixing plates are arranged at intervals along the direction of the flow direction of the gas output by the annular gas inlet pipeline; and the inclination directions of the plurality of blades of two adjacent air mixing plates are opposite.
Preferably, the gas mixing plate further comprises an annular edge body;
the outer ends of a plurality of blades of the air mixing plate are fixed on the inner wall of the annular edge body.
Preferably, the air inlet plate is installed at the bottom of the mixing cavity, and the air mixing plate is installed at the top of the mixing cavity;
the gas outlet pipeline is positioned at the top of the mixing cavity at one end connected with the mixing cavity, sequentially penetrates through the mixing plate, the gas inlet plate and the bottom wall of the mixing cavity, and is connected with a gas inlet of the cavity.
The invention also provides a process chamber, which comprises a gas mixing structure used for mixing different gases before the different gases enter the chamber, wherein the gas mixing structure adopts the gas mixing structure.
The invention also provides semiconductor processing equipment which comprises a process chamber, wherein the process chamber adopts the process chamber.
The invention has the following beneficial effects:
the mixing cavity connected with the multi-path air inlet pipeline and the multi-path air outlet pipeline is arranged, so that the mixing space of the multi-path gas input by the multi-path air inlet pipeline can be enlarged, and the gas can be uniformly mixed; furthermore, by placing the mixing chamber close to the gas inlet of the chamber, the length of the gas mixing line reaching the gas inlet of the chamber can be reduced to a large extent, so that the line is not blocked.
Drawings
FIG. 1 is a schematic structural diagram of a gas mixing structure in the prior art;
FIG. 2 is a schematic structural diagram of another gas mixing structure in the prior art;
fig. 3 is a schematic structural diagram of a gas mixing structure provided in embodiment 1 of the present invention;
FIG. 4 is a schematic diagram of a mixing chamber of FIG. 3;
FIG. 5 is a schematic structural view of the intake plate of FIG. 4;
FIG. 6 is a schematic view of another configuration of the mixing chamber of FIG. 3;
FIG. 7 is a schematic structural view of the gas mixing plate of FIG. 6;
FIG. 8 is a schematic view of another embodiment of the mixing chamber of FIG. 3;
fig. 9 is a schematic view of still another structure of the mixing chamber of fig. 3.
Wherein the reference numerals include: 1, an air inlet pipeline; 2, an air outlet pipeline; 3, a mixing cavity; 4, an air inlet plate; 5, air outlet holes; 6, an annular air inlet pipeline; 7, a gas mixing plate; 8, a blade; 9, a central body; 10, annular rim body.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the gas mixing structure, the process chamber and the semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.
Example 1
FIG. 3 is a schematic structural diagram of a gas mixing structure according to an embodiment of the present invention; referring to fig. 3, the gas mixing structure provided in the embodiment of the present invention is used for providing gas to a chamber, and includes multiple gas inlet pipelines 1 and at least one gas outlet pipeline 2, where the multiple gas inlet pipelines 1 are connected to multiple gas sources in a one-to-one correspondence, and the gas outlet pipeline 2 is connected to a gas inlet of the chamber. The gas mixing structure further comprises a mixing cavity 3, the mixing cavity 3 is provided with a gas mixing space, the mixing cavity 3 is respectively connected with the gas inlet pipeline 1 and the gas outlet pipeline 2, and the gas of a plurality of gas sources is mixed in the gas mixing space and then is output to a gas inlet of the cavity through the gas outlet pipeline 2.
The number of the air inlet pipelines 1 included in the air mixing structure can be set according to requirements, for example, the air mixing structure is provided with two air inlet pipelines 1. For convenience of description, the embodiment and the drawings of the present invention take the air mixing structure including two air inlet pipes 1 as an example for description.
Referring to fig. 3, in the present invention, two paths of gas enter the Gasbox from the plant end, sequentially pass through the front end pneumatic valves (V11, V21), the mass flow controllers (MFC01, MFC02) and the rear end pneumatic valves (V12, V22), and reach the mixing chamber 3 disposed at the upper part of the gas inlet of the chamber along the respective gas inlet pipes 1. The mixing cavity 3 is a container with a large volume, two paths of gas are introduced into the mixing cavity 3, and after the mixing cavity 3 completes gas mixing, the mixing cavity 3 enables the mixed gas to reach the inside of the cavity through a gas inlet of the cavity through the gas outlet pipeline 2.
The mixing cavity 3 connected with the air inlet pipeline 1 and the air outlet pipeline 2 is arranged, so that the mixing space of different gases input by the multiple paths of air inlet pipelines can be enlarged, and the gases can be uniformly mixed; furthermore, by placing the mixing chamber close to the gas inlet of the chamber, the length of the gas mixing line reaching the gas inlet of the chamber can be reduced to a large extent, so that the line is not blocked.
Preferably, as shown in fig. 4, the mixing chamber 3 comprises an air intake plate 4; as shown in fig. 5, the air inlet plate 4 includes a plurality of annular air inlet pipes 6 connected to the multiple air inlet pipes 1 in a one-to-one correspondence manner, and a plurality of air outlet holes 5 are formed at intervals on the annular air inlet pipes 6 to introduce the air in the annular air inlet pipes 6 into the air mixing space of the mixing chamber 3. It will be appreciated that the plurality of gas outlet holes 5 may be used to provide gas in a plurality of regions within the mixing chamber 3 to facilitate uniform mixing of the gases.
Preferably, as shown in fig. 5, the plurality of air outlet holes 5 are uniformly spaced along the circumferential direction of the annular air inlet pipeline 6, so as to better facilitate the uniform mixing of the air in the mixing cavity 3.
Preferably, as shown in fig. 5, a plurality of annular air inlet pipes 6 (two) corresponding to the plurality of air inlet pipes 1 are sequentially nested on the same plane, so that not only can a plurality of gases be rapidly contacted and mixed, but also the volume of the air inlet plate is reduced and the space of the mixing cavity is saved.
It is also preferable that, as shown in fig. 9, a plurality of annular intake pipes 6 corresponding to the plurality of intake pipes 1 are arranged at intervals in a stacked manner, and the directions of the flow directions of the output gases are the same (from bottom to top as in fig. 9). It should be noted that, in practical applications, the shapes of the plurality of annular intake pipes 6 may be the same or different, and in fig. 9, the shapes are the same and leaf-shaped, but naturally, other shapes, such as an ellipse, a quadrangle, a pentagon, and the like, may also be adopted in practical applications.
Preferably, as shown in fig. 6, the mixing chamber 3 includes a gas mixing plate 7, the gas mixing plate 7 is disposed in the mixing chamber 3 and is disposed along a direction blocking a gas flow direction output by the annular gas inlet pipeline 6, in fig. 6, the gas flow direction is from bottom to top, and therefore, the disposition direction of the gas mixing plate 7 is a horizontal direction in fig. 6; as shown in fig. 7, the air mixing plate 7 includes a plurality of blades 8 and a center body 9; the plurality of blades are spaced and fixedly arranged along the circumferential direction of the central body 9, and the plurality of blades 8 have the same inclination direction. It can be understood that, by means of the gas mixing plate 7 which is arranged along the direction of blocking the gas flow and has a plurality of blades 8, the gas flow flowing through the gaps between the blades 8 can be made into a vortex, which is beneficial to the uniform mixing of the gas.
Preferably, the number of the gas mixing plates 7 is plural; the gas flow direction (vertical direction in fig. 6) interval setting that a plurality of gas mixing plates 7 follow the output of annular air inlet pipeline, the incline direction of a plurality of blades 8 of two adjacent gas mixing plates 7 is opposite, like this, more is favorable to gas mixture to obtain more even mist.
Preferably, as shown in fig. 7, the gas mixing plate 7 further comprises an annular edge body 10; the outer ends of the plurality of blades 8 of the gas mixing plate 7 are fixed on the inner wall of the annular edge body 10, so that the gas mixing plate 7 is convenient to mount and fix, and the stability and the reliability of the gas mixing plate 7 are high.
Preferably, as shown in fig. 8, the mixing chamber 3 may further include both an air intake plate 4 and an air mixing plate 7, the air intake plate 4 is installed at the bottom of the mixing chamber 3, and the air mixing plate 7 is installed at the top of the mixing chamber; the one end that goes out the gas pipeline 2 and link to each other with mixing chamber 3 is located the top of mixing chamber to run through mixing plate 7, inlet plate 4 and the diapire of mixing chamber 3 in proper order, like this, the stroke of the gas of inlet pipeline 1 is from bottom to top, and from top to bottom exports through going out gas pipeline 2, therefore can increase gaseous stroke, thereby favourable gas mixes more fully. It will be appreciated that figure 8, by including both the gas inlet plate 4 and the gas mixing plate 7, enables a more uniform mixing of the gases than is the case in figures 6 and 4.
Preferably, the mixing chamber 3 is a split structure, so as to facilitate disassembly and assembly and to facilitate cleaning of byproducts generated during the reaction process.
Preferably, the air inlet plate 4 and the bottom wall of the chamber are of an integral structure and can be detached, so that the air inlet plate 4 and the bottom wall of the chamber of the integral structure can be detached for cleaning, and thus, the structure of the mixing chamber is simpler, and the mixing chamber is convenient to install and maintain.
Example 2
The embodiment of the invention provides a process chamber, which comprises a gas mixing structure, wherein the gas mixing structure is used for mixing different gases before the different gases enter the chamber, and the gas mixing structure adopts the gas mixing structure in the embodiment 1.
According to the process chamber provided by the embodiment of the invention, as the gas mixing structure in the embodiment 1 is adopted, the process chamber not only can uniformly mix gas, but also cannot block a pipeline, so that the process quality of the process chamber and the stability and reliability of the chamber can be improved.
Example 3
An embodiment of the present invention provides a semiconductor processing apparatus, which includes a process chamber, and the process chamber in embodiment 2 is adopted as the process chamber.
According to the semiconductor processing equipment provided by the embodiment of the invention, the process chamber provided by the embodiment 2 of the invention is adopted, so that the process quality, stability and reliability of the semiconductor processing equipment can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A gas mixing structure is used for providing gas for a cavity and comprises a plurality of paths of gas inlet pipelines and at least one path of gas outlet pipeline, wherein the plurality of paths of gas inlet pipelines are correspondingly connected with a plurality of gas sources one by one, the gas outlet pipelines are connected with a gas inlet of the cavity, the gas mixing structure is characterized by also comprising a mixing cavity, the mixing cavity is provided with a gas mixing space,
the mixing cavity is respectively connected with the gas inlet pipeline and the gas outlet pipeline, so that the gases of the gas sources are mixed in the gas mixing space and then are output to a gas inlet of the cavity through the gas outlet pipeline;
the mixing chamber comprises an air inlet plate which is provided with a plurality of air inlets,
the air inlet plate comprises a plurality of annular air inlet pipelines which are correspondingly connected with the multi-path air inlet pipelines one by one;
and a plurality of air outlet holes are arranged on the annular air inlet pipeline at intervals and used for guiding the air in the annular air inlet pipeline into the air mixing space.
2. The air mixing structure according to claim 1, wherein the plurality of air outlet holes are uniformly spaced along the circumferential direction of the annular air inlet pipeline.
3. The air mixing structure of claim 1, wherein the plurality of annular air inlet pipes corresponding to the plurality of air inlet pipes are sequentially nested on the same plane.
4. The gas mixing structure according to claim 1, wherein the plurality of annular gas inlet pipes corresponding to the plurality of gas inlet pipes are arranged at intervals in a stacked manner, and the directions of the flow directions of the output gases are the same.
5. The gas mixing structure according to claim 1, wherein the mixing chamber further comprises a gas mixing plate,
the gas mixing plate is arranged in the mixing cavity and is arranged along the direction of blocking the flow direction of the gas output by the annular gas inlet pipeline;
the gas mixing plate comprises a plurality of blades and a central body;
the blades are arranged at intervals and fixedly along the circumferential direction of the central body, and the inclination directions of the blades are the same.
6. The gas mixing structure according to claim 5, wherein the number of the gas mixing plates is plural;
the plurality of gas mixing plates are arranged at intervals along the direction of the flow direction of the gas output by the annular gas inlet pipeline; and the inclination directions of the plurality of blades of two adjacent air mixing plates are opposite.
7. The gas mixing structure according to claim 5, wherein the gas mixing plate further comprises an annular edge body;
the outer ends of a plurality of blades of the air mixing plate are fixed on the inner wall of the annular edge body.
8. The gas mixing structure according to claim 5, wherein the gas inlet plate is mounted at the bottom of the mixing chamber and the gas mixing plate is mounted at the top of the mixing chamber;
the gas outlet pipeline is positioned at the top of the mixing cavity at one end connected with the mixing cavity, sequentially penetrates through the mixing plate, the gas inlet plate and the bottom wall of the mixing cavity, and is connected with a gas inlet of the cavity.
9. A process chamber comprising a gas mixing arrangement for mixing different gases before entering the chamber, wherein the gas mixing arrangement is as claimed in any one of claims 1 to 8.
10. A semiconductor processing apparatus comprising a process chamber, wherein the process chamber employs the process chamber of claim 9.
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| CN201710257153.8A CN108728820B (en) | 2017-04-19 | 2017-04-19 | Gas mixing structure, process chamber and semiconductor processing equipment |
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| CN201710257153.8A CN108728820B (en) | 2017-04-19 | 2017-04-19 | Gas mixing structure, process chamber and semiconductor processing equipment |
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| CN108728820A CN108728820A (en) | 2018-11-02 |
| CN108728820B true CN108728820B (en) | 2020-06-19 |
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| US11772058B2 (en) * | 2019-10-18 | 2023-10-03 | Taiwan Semiconductor Manufacturing Company Limited | Gas mixing system for semiconductor fabrication |
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| CN112941626B (en) * | 2021-01-22 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Air inlet assembly and air inlet device of process chamber and semiconductor processing equipment |
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