US20220051910A1 - Showerhead With Interlaced Gas Feed And Removal And Methods Of Use - Google Patents
Showerhead With Interlaced Gas Feed And Removal And Methods Of Use Download PDFInfo
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- US20220051910A1 US20220051910A1 US17/513,871 US202117513871A US2022051910A1 US 20220051910 A1 US20220051910 A1 US 20220051910A1 US 202117513871 A US202117513871 A US 202117513871A US 2022051910 A1 US2022051910 A1 US 2022051910A1
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- 238000005192 partition Methods 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 14
- 239000000376 reactant Substances 0.000 claims 8
- 238000003672 processing method Methods 0.000 claims 2
- 238000009826 distribution Methods 0.000 abstract description 40
- 238000004891 communication Methods 0.000 abstract description 27
- 239000012530 fluid Substances 0.000 abstract description 26
- 239000007789 gas Substances 0.000 description 62
- 210000002381 plasma Anatomy 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 10
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- 239000006227 byproduct Substances 0.000 description 6
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- 230000008021 deposition Effects 0.000 description 3
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- 238000000231 atomic layer deposition Methods 0.000 description 2
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- 230000002093 peripheral effect Effects 0.000 description 2
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- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Definitions
- the present disclosure generally relate to an apparatus and a method for providing a flow of gas into and out of a processing chamber. More specifically, embodiments of the disclosure are directed to gas distribution modules with interlaced gas feed and removal components.
- One or more embodiments of the disclosure are directed to gas distribution modules comprising a housing, an inlet and an outlet.
- the housing has at least one side, a top, a bottom and a partition between the top and bottom.
- the at least one side, partition and top define an upper plenum.
- the at least one side, partition and bottom define a lower plenum.
- the inlet is in fluid communication with one of the upper plenum or the lower plenum.
- the outlet is in fluid communication with the other of the upper plenum or the lower plenum.
- a plurality of passages extends from the upper plenum, through the lower plenum and extending through the bottom of the housing to form upper openings in the bottom.
- the upper passages are separated from the lower plenum by an upper passage wall and provide fluid communication between the upper plenum and an outer face of the bottom of the housing.
- a plurality of lower passages extends through the bottom of the housing to form lower openings in the bottom.
- the lower passages provide fluid communication between the lower plenum and the outer face of the bottom of the housing.
- Additional embodiments of the disclosure are directed to gas distribution modules comprising a housing, an inlet and an outlet.
- the housing has at least one side, a top, a bottom and a partition between the top and bottom.
- the at least one side, partition and top define an upper plenum.
- the at least one side, partition and bottom define a lower plenum.
- the inlet is in fluid communication the upper plenum and the outlet is in fluid communication with the lower plenum.
- a plurality of upper passages extends from the upper plenum, through the lower plenum and through the bottom of the housing to form upper openings in the bottom.
- the upper passages are separated from the lower plenum by an upper passage wall and provide fluid communication between the upper plenum and an outer face of the bottom of the housing.
- a plurality of lower passages extends through the bottom of the housing to form lower openings in the bottom.
- the lower passages provide fluid communication between the lower plenum and the outer face of the bottom of the housing.
- the lower openings are arranged so that there are three or more lower openings around each upper opening.
- the housing has at least one side, a top, a bottom and a partition between the top and bottom.
- the at least one side, partition and top define an upper plenum.
- the at least one side, partition and bottom define a lower plenum.
- the inlet is in fluid communication with one of the upper plenum or the lower plenum.
- the outlet is in fluid communication with the other of the upper plenum or the lower plenum.
- a plurality of upper passages extends from the upper plenum, through the lower plenum and through the bottom of the housing to form upper openings in the bottom.
- the upper passages are separated from the lower plenum by an upper passage wall and provide fluid communication between the upper plenum and an outer face of the bottom of the housing.
- a plurality of lower passages extends through the bottom of the housing to form lower openings in the bottom.
- the lower passages provide fluid communication between the lower plenum and the outer face of the bottom of the housing.
- An RF feed line is in electrical communication with one of the partition to generate a plasma in the upper plenum or lower plenum, or the bottom of the housing to generate a plasma in the lower plenum or on an opposite side of the bottom than the lower plenum.
- FIG. 1 shows a view of a gas distribution module with cutaway portion in accordance with one or more embodiments of the disclosure
- FIG. 2 shows an embodiment of a gas distribution module in accordance with one or more embodiment of the disclosure
- FIG. 3 shows an embodiment of a gas distribution module in accordance with one or more embodiment of the disclosure
- FIG. 4 shows an embodiment of a gas distribution module in accordance with one or more embodiment of the disclosure
- FIG. 5 shows an embodiment of a gas distribution module in accordance with one or more embodiment of the disclosure
- FIG. 6 shows an expanded view of region VI of FIG. 5 ;
- FIG. 7 shows a partial cross-sectional schematic of a gas distribution module in accordance with one or more embodiment of the disclosure
- FIG. 8 shows a partial cross-sectional schematic view of a gas distribution module in accordance with one or more embodiment of the disclosure
- FIG. 9 shows a partial cross-sectional schematic view of a gas distribution module in accordance with one or more embodiment of the disclosure.
- FIG. 10A shows a cross-sectional schematic view of a gas distribution module with an RF powered partition in accordance with one or more embodiment of the disclosure
- FIG. 10B shows a cross-sectional schematic view of a gas distribution module with an RF powered bottom in accordance with one or more embodiment of the disclosure
- FIG. 10C shows a cross-sectional schematic view of a gas distribution module with an RF powered top in accordance with one or more embodiment of the disclosure.
- FIG. 11 shows a gas distribution assembly incorporating gas distribution modules according to one or more embodiment of the disclosure.
- Embodiments of the disclosure are directed to gas distribution apparatus for use in chemical vapor deposition type processes.
- One or more embodiments of the disclosure are directed to atomic layer deposition processes and apparatus (also called cyclical deposition) incorporating the gas distribution apparatus described.
- the gas distribution apparatus described may be referred to as a showerhead or gas distribution plate, but it will be recognized by those skilled in the art that the apparatus does not need to be shaped like a showerhead or plate.
- the terms “showerhead” and “plate” should not be taken as limiting the scope of the disclosure.
- feed gas carrying chemical species from a recursive feed structure comes to an upper plenum (or lower plenum in a different configuration).
- the gas flows through multiple tubes (inlets) form the upper plenum across the lower plenum to the process region.
- the process gas interacts with the wafer surface leading to surface processing (deposition or etch).
- the process gas with by-products is removed through the exhaust tubes that are interlaced with the inlets. In this manner, by-products (which include reaction products) are removed locally minimizing variation of chemical species across the wafer.
- the exhaust tubes are connected to the lower plenum (or upper plenum in a different configuration).
- the lower plenum for exhaust is recursively connected to the pump port.
- One or more embodiments of the disclosure advantageously provide gas distribution modules that allow each part of the wafer to see a similar environment in terms of chemical species, flow velocity and pressure. Some embodiments reduce by-products due to chemical reaction (on the wafer surface) by pumping out the by-products, locally minimizing variation of chemical species across the wafer. Some embodiments advantageously provide uniform exposure time of chemical species. In some embodiments, saturation of chemical species occurs almost simultaneously across the wafer minimizing the need for over-exposure. Some embodiments reduce the overall exposure time to the wafers, increasing overall throughput.
- FIG. 1 illustrates an embodiment of a gas distribution module 100 in accordance with one or more embodiment of the disclosure.
- the housing 110 illustrated is a wedge-shaped component that can be incorporated into a larger gas distribution assembly by combining various wedge-shaped components to form a circular gas distribution system.
- the housing 110 is a circular shaped component that can be used without additional components.
- the housing 110 of some embodiments has at least one side, a top and a bottom.
- a round housing would have one continuous side; whereas a wedge-shaped housing would have four sides, as described with respect to FIG. 1 .
- the housing 110 illustrated has a top 111 , first side 112 , second side 113 (collectively referred to as sides), an inner peripheral end 114 , an outer peripheral end 115 and a bottom 116 .
- Each of the top, bottom and sides has an inner face and an outer face defining a thickness.
- the housing has a partition 120 separating the inside of the housing into an upper plenum 130 and a lower plenum 140 .
- the partition has a first side and a second side defining a thickness.
- the upper plenum 130 is defined by the top 111 of the housing 110 and partition 120 .
- the lower plenum 140 is defined by the partition 120 and the bottom 116 .
- the plenums are bounded by more than a top and bottom boundary.
- the sides 112 , 113 and ends 114 , 115 form lateral boundaries of the plenums 130 , 140 .
- the wall is continuous, forming the lateral boundaries of the plenums.
- An inlet 150 is in fluid communication with one of the upper plenum 130 or the lower plenum 140 .
- An outlet 160 is in fluid communication with the other of the upper plenum 130 or lower plenum 140 than the inlet 150 .
- the inlet 150 is in fluid communication with the upper plenum 130 and the outlet is in fluid communication with the lower plenum 140 .
- the inlet is in fluid communication with the lower plenum and the outlet is in fluid communication with the upper plenum.
- the inlet 150 is configured to be connected to a gas source 155 to provide a flow of gas into the plenum.
- the outlet 160 is configured to be connected to a vacuum source 165 to provide a vacuum stream to draw gases out of the plenum connected to the outlet.
- the gas distribution module 100 includes one or more of a gas source 155 or vacuum source 165 .
- the upper plenum 130 includes a plurality of upper passages 131 extending from the upper plenum 130 , through the lower plenum 140 and extending through the bottom 116 of the housing to form upper openings 135 in the bottom 116 .
- the upper passages 131 are separated from the lower plenum 140 by an upper passage wall 132 .
- the upper passages 131 provide fluid communication between the upper plenum 130 and the outer face 117 of the bottom 116 of the housing 110 .
- the outer face 117 is also referred to as the portion of the bottom 116 opposite the lower plenum 140 .
- the lower plenum 140 includes a plurality of lower passages 141 extending through the bottom 116 of the housing 110 to form lower openings 145 in the bottom 116 .
- the lower passages 141 provide fluid communication between the lower plenum 140 and the outer face 117 of the bottom 116 of the housing 110 .
- a gas source 155 e.g., gas cylinder
- a vacuum source 165 e.g., vacuum pump or foreline
- the gas source 155 provides a flow of gas into the upper plenum 130 (in the illustrated embodiment).
- the gas pressure in the upper plenum 130 reaches a steady state.
- the gas in the upper plenum 130 flows through the upper passages 131 out the outer face 117 of the housing 110 into a process region 102 located on the opposite side of the bottom 116 than the lower plenum 140 .
- each of the upper openings 135 is surrounded by three lower openings 145 and each of the lower openings 145 is surrounded by three upper openings 135 .
- FIG. 2 shows a view of the bottom 116 of a gas distribution module 100 with a round housing 110 .
- the term “surrounded by” means that the closest openings to the subject opening are the stated opening.
- an upper opening 135 is labeled in FIG. 2 and shows that the three closes openings are lower openings 145 .
- the grid lines shown in FIG. 2 are for illustrative purposes only to show the arrangement of openings 135 , 145 .
- each of the upper openings 135 is surrounded by four, five or six lower openings 145 and each of the lower openings 145 are surrounded by the same number of upper openings 135 .
- FIG. 3 illustrates an embodiment in which the upper opening 135 is surrounded by four lower openings 145 and each lower opening 145 is surrounded by four upper openings 135 .
- FIG. 4 illustrates another embodiment of the disclosure in which the upper openings 135 are arranged in circular zones alternating with circular zones of lower openings 145 .
- each upper opening 135 has a lower opening 145 closer than another upper opening 135 .
- the illustrated embodiment has four zones: innermost zone 170 a has one upper opening 135 ; zone 170 b is around innermost zone 170 a and has four lower openings 145 ; zone 170 c is around zone 170 b and has eight upper openings 135 ; and zone 170 d is around zone 170 c and has eight lower openings 145 .
- zone 170 d is around zone 170 c and has eight lower openings 145 .
- one of the lower openings 145 or upper openings 135 bound the other of the lower openings 145 or upper opening 135 .
- FIG. 5 illustrates an embodiment of a gas distribution module 100 in which each upper openings 135 is bounded by a ring-shaped lower opening 145 .
- the openings in fluid communication with the inlet 150 are bounded by the openings in fluid communication with the outlet 160 (through the intervening plenum and passage).
- Region VI in FIG. 5 is shown expanded in FIG. 6 .
- the lower opening 145 is shown as a ring-shaped opening with two bridges 119 .
- the bridges 119 may be included to connect the portion of the bottom 116 between the circular upper opening 135 and the ring shaped lower opening 145 with the remaining portion of the housing 110 .
- the embodiment illustrated has two bridges 119 ; however it will be recognized that there can be more or less bridges 119 .
- the openings in fluid communication with the inlet 150 have a diffusion plate 180 at the bottom 116 of the housing 110 .
- FIG. 7 illustrates a cross-sectional view of an embodiment in which a diffusion plate 180 with apertures 185 are positioned at the bottom 116 of the housing 110 aligned with the upper openings 135 .
- the diffusion plate 180 has a plurality of apertures to separate the flow of gas through the opening 135 into multiple flows. The number of apertures can vary.
- At least one of the apertures 185 is oriented at an angle to at least one aperture 185 to provide non-parallel flows of gases through the apertures.
- the diffusion plate 180 shown in FIG. 7 has three apertures 185 with the center aperture directing a flow normal to the diffusion plate 180 with the opening 135 and the outer apertures 185 direct flows outward, relative to the center aperture, so that the flow are non-parallel.
- the angle of the apertures can be any suitable angle. In some embodiments, the angle is in the range of about 0° to about 80° relative to the diffusion plate 180 normal.
- FIG. 9 shows another embodiment of the disclosure in which the module 100 includes a second inlet 151 in fluid communication with one of the upper plenum 130 (as shown) or the lower plenum 140 (not shown).
- the second inlet 151 can provide a flow of the same gas as the inlet 150 or a different gas.
- the inlet 150 and second inlet 151 may provide different reactive species which can react in the upper plenum 130 , flow through the upper openings 135 into the reaction space of the process region 102 .
- the second inlet 151 provides a flow of diluent gas into the plenum.
- FIG. 9 shows another embodiment of the disclosure in which the module 100 includes a second inlet 151 in fluid communication with one of the upper plenum 130 (as shown) or the lower plenum 140 (not shown).
- the second inlet 151 can provide a flow of the same gas as the inlet 150 or a different gas.
- the inlet 150 and second inlet 151 may provide different reactive species which can react in the
- the second inlet 151 flows into upper plenum 130 which is split by divider 190 into a first plenum 130 a and a second plenum 130 b .
- the outlet 160 and lower openings are not illustrated in this Figure for clarity purposes only.
- FIG. 10A the partition 120 is connected to an RF feed line 210 (e.g., a coaxial feed line) and the bottom 116 of the housing 110 is electrically grounded (or held at a different potential than the partition).
- the sides and top of the housing are made of a suitable dielectric material.
- energizing the partition 120 can result in formation of a plasma 220 in the lower plenum 140 .
- a suitable height for plenum 140 is chosen to generate plasma in lower plenum 140 while a different height is chosen for upper plenum 130 not to generate plasma in upper plenum.
- the plasma species can flow through the lower openings 145 into the process region 102 .
- Embodiments of FIG. 10A are also referred to as remote plasma sources (RPS) because the plasma is generated remotely from the processing region 102 .
- RPS remote plasma sources
- the bottom 116 of the housing 110 is connected to an RF feed line 210 and the partition 120 , top 111 and ends 114 , 115 are non-conductive.
- the substrate 230 or pedestal 235 can act as the ground electrode (or be held at a different potential than the bottom 116 ) so that a plasma 220 is generated in the processing region 102 .
- the heights of upper plenum 130 and lower plenum 140 are suitably chosen not to generate plasma therein. Stated differently, the plasma 220 is generated on an opposite side of the bottom 116 than the lower plenum 140 .
- Embodiments of the type shown in FIG. 10B in which the substrate or pedestal act as an electrode for plasma generation are also referred to as a direct plasma.
- the top 111 of the housing 110 is connected to an RF feed line 210 and the partition 120 and ends 114 , 115 are non-conductive.
- the partition 120 can act as the ground electrode (or can be held at a different potential than the top 111 ) so that a plasma 220 is generated in the upper plenum 130 .
- a suitable height for plenum 130 is chosen to generate plasma in upper plenum 130 while a different height can be chosen for lower plenum 140 to prevent plasma ignition in the lower plenum 140 .
- the plasma species can flow from the upper plenum 130 into the process region 102 .
- the gas distribution module 100 can be used to form one or more layers during a plasma enhanced atomic layer deposition (PEALD) or plasma enhanced chemical vapor deposition (PECVD) process.
- PEALD plasma enhanced atomic layer deposition
- PECVD plasma enhanced chemical vapor deposition
- the use of plasma provides sufficient energy to promote a species into the excited state where surface reactions become favorable and likely.
- Introducing the plasma into the process can be continuous or pulsed.
- the plasma may be generated via any suitable plasma generation process or technique known to those skilled in the art.
- plasma may be generated by one or more of a microwave (MW) frequency generator or a radio frequency (RF) generator.
- MW microwave
- RF radio frequency
- Suitable frequencies include, but are not limited to, 2 MHz, 13.56 MHz, 40 MHz, 60 MHz, 100 MHz, 121 MHz and 162 MHz. Although plasmas may be used during the deposition processes disclosed herein, it should be noted that plasmas may not be required.
- the gas distribution module 100 is a wedge-shaped component that is combined with other wedge-shaped modules to form a circular or disc-shaped gas distribution assembly.
- FIG. 11 shows a gas distribution assembly 270 comprising at least one gas distribution module 100 (two are shown) and a plurality of injector units 240 combined to make a circular assembly.
- a substrate can be rotated along a circular path beneath each of the gas distribution modules 100 and injector units 240 to be exposed to a plurality of different processing regions to deposit or remove a film from the substrate.
- Some embodiments of the disclosure are directed to processing chambers comprising the gas distribution module 100 .
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Abstract
Description
- This application is a continuation of U.S. application Ser. No. 16/376,367, filed Apr. 5, 2019, which claims priority to U.S. Provisional Application No. 62/654,518, filed Apr. 8, 2018, the entire disclosures of which are hereby incorporated by reference herein.
- The present disclosure generally relate to an apparatus and a method for providing a flow of gas into and out of a processing chamber. More specifically, embodiments of the disclosure are directed to gas distribution modules with interlaced gas feed and removal components.
- In the field of semiconductor processing, flat-panel display processing or other electronic device processing, vapor deposition processes have played an important role in depositing materials on substrates. With smaller technology node, on-wafer process uniformity during steady state and transient becomes more stringent. Gas flow velocity, pressure and chemical species distributions are important for on-wafer performance. During wafer surface process, by-products are generated that changes the species composition adversely affecting wafer surface process (deposition, etch, etc.). Center feed and edge exhaust based gas distribution apparatus can lead to flow velocity and pressure variations and by-product accumulation from center to edge leading on-wafer process non-uniformity.
- Therefore, there is an ongoing need in the art for improved gas distribution apparatuses, including showerheads, to supply uniform flows of gases to a substrate.
- One or more embodiments of the disclosure are directed to gas distribution modules comprising a housing, an inlet and an outlet. The housing has at least one side, a top, a bottom and a partition between the top and bottom. The at least one side, partition and top define an upper plenum. The at least one side, partition and bottom define a lower plenum. The inlet is in fluid communication with one of the upper plenum or the lower plenum. The outlet is in fluid communication with the other of the upper plenum or the lower plenum. A plurality of passages extends from the upper plenum, through the lower plenum and extending through the bottom of the housing to form upper openings in the bottom. The upper passages are separated from the lower plenum by an upper passage wall and provide fluid communication between the upper plenum and an outer face of the bottom of the housing. A plurality of lower passages extends through the bottom of the housing to form lower openings in the bottom. The lower passages provide fluid communication between the lower plenum and the outer face of the bottom of the housing.
- Additional embodiments of the disclosure are directed to gas distribution modules comprising a housing, an inlet and an outlet. The housing has at least one side, a top, a bottom and a partition between the top and bottom. The at least one side, partition and top define an upper plenum. The at least one side, partition and bottom define a lower plenum. The inlet is in fluid communication the upper plenum and the outlet is in fluid communication with the lower plenum. A plurality of upper passages extends from the upper plenum, through the lower plenum and through the bottom of the housing to form upper openings in the bottom. The upper passages are separated from the lower plenum by an upper passage wall and provide fluid communication between the upper plenum and an outer face of the bottom of the housing. A plurality of lower passages extends through the bottom of the housing to form lower openings in the bottom. The lower passages provide fluid communication between the lower plenum and the outer face of the bottom of the housing. The lower openings are arranged so that there are three or more lower openings around each upper opening.
- Further embodiments of the disclosure are directed to gas distribution modules comprising a housing, an inlet and an outlet. The housing has at least one side, a top, a bottom and a partition between the top and bottom. The at least one side, partition and top define an upper plenum. The at least one side, partition and bottom define a lower plenum. The inlet is in fluid communication with one of the upper plenum or the lower plenum. The outlet is in fluid communication with the other of the upper plenum or the lower plenum. A plurality of upper passages extends from the upper plenum, through the lower plenum and through the bottom of the housing to form upper openings in the bottom. The upper passages are separated from the lower plenum by an upper passage wall and provide fluid communication between the upper plenum and an outer face of the bottom of the housing. A plurality of lower passages extends through the bottom of the housing to form lower openings in the bottom. The lower passages provide fluid communication between the lower plenum and the outer face of the bottom of the housing. An RF feed line is in electrical communication with one of the partition to generate a plasma in the upper plenum or lower plenum, or the bottom of the housing to generate a plasma in the lower plenum or on an opposite side of the bottom than the lower plenum.
- So that the manner in which the above recited features of the disclosure are attained and can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
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FIG. 1 shows a view of a gas distribution module with cutaway portion in accordance with one or more embodiments of the disclosure; -
FIG. 2 shows an embodiment of a gas distribution module in accordance with one or more embodiment of the disclosure; -
FIG. 3 shows an embodiment of a gas distribution module in accordance with one or more embodiment of the disclosure; -
FIG. 4 shows an embodiment of a gas distribution module in accordance with one or more embodiment of the disclosure; -
FIG. 5 shows an embodiment of a gas distribution module in accordance with one or more embodiment of the disclosure; -
FIG. 6 shows an expanded view of region VI ofFIG. 5 ; -
FIG. 7 shows a partial cross-sectional schematic of a gas distribution module in accordance with one or more embodiment of the disclosure; -
FIG. 8 shows a partial cross-sectional schematic view of a gas distribution module in accordance with one or more embodiment of the disclosure; -
FIG. 9 shows a partial cross-sectional schematic view of a gas distribution module in accordance with one or more embodiment of the disclosure; -
FIG. 10A shows a cross-sectional schematic view of a gas distribution module with an RF powered partition in accordance with one or more embodiment of the disclosure; -
FIG. 10B shows a cross-sectional schematic view of a gas distribution module with an RF powered bottom in accordance with one or more embodiment of the disclosure; -
FIG. 10C shows a cross-sectional schematic view of a gas distribution module with an RF powered top in accordance with one or more embodiment of the disclosure; and -
FIG. 11 shows a gas distribution assembly incorporating gas distribution modules according to one or more embodiment of the disclosure. - Embodiments of the disclosure are directed to gas distribution apparatus for use in chemical vapor deposition type processes. One or more embodiments of the disclosure are directed to atomic layer deposition processes and apparatus (also called cyclical deposition) incorporating the gas distribution apparatus described. The gas distribution apparatus described may be referred to as a showerhead or gas distribution plate, but it will be recognized by those skilled in the art that the apparatus does not need to be shaped like a showerhead or plate. The terms “showerhead” and “plate” should not be taken as limiting the scope of the disclosure.
- In one or more embodiments of the disclosure, feed gas carrying chemical species from a recursive feed structure comes to an upper plenum (or lower plenum in a different configuration). The gas flows through multiple tubes (inlets) form the upper plenum across the lower plenum to the process region. The process gas interacts with the wafer surface leading to surface processing (deposition or etch). The process gas with by-products is removed through the exhaust tubes that are interlaced with the inlets. In this manner, by-products (which include reaction products) are removed locally minimizing variation of chemical species across the wafer. The exhaust tubes are connected to the lower plenum (or upper plenum in a different configuration). The lower plenum for exhaust is recursively connected to the pump port. Each part of the wafer “sees” similar steady state and transient response of the variables in terms of chemical species, flow velocity and pressure, improving on-wafer process uniformity and exposure time.
- One or more embodiments of the disclosure advantageously provide gas distribution modules that allow each part of the wafer to see a similar environment in terms of chemical species, flow velocity and pressure. Some embodiments reduce by-products due to chemical reaction (on the wafer surface) by pumping out the by-products, locally minimizing variation of chemical species across the wafer. Some embodiments advantageously provide uniform exposure time of chemical species. In some embodiments, saturation of chemical species occurs almost simultaneously across the wafer minimizing the need for over-exposure. Some embodiments reduce the overall exposure time to the wafers, increasing overall throughput.
-
FIG. 1 illustrates an embodiment of agas distribution module 100 in accordance with one or more embodiment of the disclosure. Ahousing 110 illustrated with acutout portion 105 to show a portion of the inside of the housing. Thehousing 110 illustrated is a wedge-shaped component that can be incorporated into a larger gas distribution assembly by combining various wedge-shaped components to form a circular gas distribution system. In some embodiments, thehousing 110 is a circular shaped component that can be used without additional components. - The
housing 110 of some embodiments has at least one side, a top and a bottom. For example, a round housing would have one continuous side; whereas a wedge-shaped housing would have four sides, as described with respect toFIG. 1 . Thehousing 110 illustrated has a top 111,first side 112, second side 113 (collectively referred to as sides), an innerperipheral end 114, an outerperipheral end 115 and a bottom 116. Each of the top, bottom and sides has an inner face and an outer face defining a thickness. - The housing has a
partition 120 separating the inside of the housing into anupper plenum 130 and alower plenum 140. The partition has a first side and a second side defining a thickness. Theupper plenum 130 is defined by the top 111 of thehousing 110 andpartition 120. Thelower plenum 140 is defined by thepartition 120 and the bottom 116. The skilled artisan will recognize that the plenums are bounded by more than a top and bottom boundary. In the wedge-shaped embodiment illustrated, thesides plenums - An
inlet 150 is in fluid communication with one of theupper plenum 130 or thelower plenum 140. Anoutlet 160 is in fluid communication with the other of theupper plenum 130 orlower plenum 140 than theinlet 150. In the illustrated embodiment theinlet 150 is in fluid communication with theupper plenum 130 and the outlet is in fluid communication with thelower plenum 140. In some embodiments, the inlet is in fluid communication with the lower plenum and the outlet is in fluid communication with the upper plenum. - The
inlet 150 is configured to be connected to agas source 155 to provide a flow of gas into the plenum. Theoutlet 160 is configured to be connected to avacuum source 165 to provide a vacuum stream to draw gases out of the plenum connected to the outlet. In some embodiments, thegas distribution module 100 includes one or more of agas source 155 orvacuum source 165. - The
upper plenum 130 includes a plurality ofupper passages 131 extending from theupper plenum 130, through thelower plenum 140 and extending through thebottom 116 of the housing to formupper openings 135 in the bottom 116. Theupper passages 131 are separated from thelower plenum 140 by anupper passage wall 132. Theupper passages 131 provide fluid communication between theupper plenum 130 and theouter face 117 of the bottom 116 of thehousing 110. Theouter face 117 is also referred to as the portion of the bottom 116 opposite thelower plenum 140. - The
lower plenum 140 includes a plurality oflower passages 141 extending through thebottom 116 of thehousing 110 to formlower openings 145 in the bottom 116. Thelower passages 141 provide fluid communication between thelower plenum 140 and theouter face 117 of the bottom 116 of thehousing 110. - In use, a gas source 155 (e.g., gas cylinder) can be connected to the
inlet 150 and a vacuum source 165 (e.g., vacuum pump or foreline) connected to theoutlet 160. Thegas source 155 provides a flow of gas into the upper plenum 130 (in the illustrated embodiment). The gas pressure in theupper plenum 130 reaches a steady state. The gas in theupper plenum 130 flows through theupper passages 131 out theouter face 117 of thehousing 110 into aprocess region 102 located on the opposite side of the bottom 116 than thelower plenum 140. - The arrangement of
openings bottom 116 of themodule housing 110 can have an effect on the overall efficiency of the gas flows. In some embodiments, each of theupper openings 135 is surrounded by threelower openings 145 and each of thelower openings 145 is surrounded by threeupper openings 135. This can be seen in the embodiment illustrated inFIG. 2 , which shows a view of the bottom 116 of agas distribution module 100 with around housing 110. As used in this manner, the term “surrounded by” means that the closest openings to the subject opening are the stated opening. For example, anupper opening 135 is labeled inFIG. 2 and shows that the three closes openings arelower openings 145. The grid lines shown inFIG. 2 are for illustrative purposes only to show the arrangement ofopenings - In some embodiments, each of the
upper openings 135 is surrounded by four, five or sixlower openings 145 and each of thelower openings 145 are surrounded by the same number ofupper openings 135. For example,FIG. 3 illustrates an embodiment in which theupper opening 135 is surrounded by fourlower openings 145 and eachlower opening 145 is surrounded by fourupper openings 135. In some embodiments, there are an equal number oflower openings 145 asupper openings 135. In some embodiments, there are a different number oflower openings 145 thanupper openings 135. -
FIG. 4 illustrates another embodiment of the disclosure in which theupper openings 135 are arranged in circular zones alternating with circular zones oflower openings 145. In some embodiments, eachupper opening 135 has alower opening 145 closer than anotherupper opening 135. The illustrated embodiment has four zones: innermost zone 170 a has oneupper opening 135; zone 170 b is around innermost zone 170 a and has fourlower openings 145; zone 170 c is around zone 170 b and has eightupper openings 135; and zone 170 d is around zone 170 c and has eightlower openings 145. Although four zones are shown, the skilled artisan will recognize that this is merely representative of one possible arrange and the size, number and spacing the zones can be varied and the number of openings in each zone can be varied. - In some embodiments, one of the
lower openings 145 orupper openings 135 bound the other of thelower openings 145 orupper opening 135. For example,FIG. 5 illustrates an embodiment of agas distribution module 100 in which eachupper openings 135 is bounded by a ring-shapedlower opening 145. Stated differently, in some embodiments, the openings in fluid communication with the inlet 150 (through the intervening plenum and passage) are bounded by the openings in fluid communication with the outlet 160 (through the intervening plenum and passage). Region VI inFIG. 5 is shown expanded inFIG. 6 . Thelower opening 145 is shown as a ring-shaped opening with twobridges 119. Thebridges 119 may be included to connect the portion of the bottom 116 between the circularupper opening 135 and the ring shapedlower opening 145 with the remaining portion of thehousing 110. The embodiment illustrated has twobridges 119; however it will be recognized that there can be more or less bridges 119. - In some embodiments, the openings in fluid communication with the
inlet 150 have adiffusion plate 180 at the bottom 116 of thehousing 110.FIG. 7 illustrates a cross-sectional view of an embodiment in which adiffusion plate 180 withapertures 185 are positioned at the bottom 116 of thehousing 110 aligned with theupper openings 135. In some embodiments, thediffusion plate 180 has a plurality of apertures to separate the flow of gas through theopening 135 into multiple flows. The number of apertures can vary. In some embodiments, there are one ormore apertures 185 in thediffusion plate 180 for each of theupper openings 135 and/or each of thelower openings 145. In some embodiments, there are in the range of about 1 to about 15apertures 185 in thediffusion plate 180. In some embodiments, at least one of theapertures 185 is oriented at an angle to at least oneaperture 185 to provide non-parallel flows of gases through the apertures. Thediffusion plate 180 shown inFIG. 7 has threeapertures 185 with the center aperture directing a flow normal to thediffusion plate 180 with theopening 135 and theouter apertures 185 direct flows outward, relative to the center aperture, so that the flow are non-parallel. The angle of the apertures can be any suitable angle. In some embodiments, the angle is in the range of about 0° to about 80° relative to thediffusion plate 180 normal. -
FIG. 9 shows another embodiment of the disclosure in which themodule 100 includes asecond inlet 151 in fluid communication with one of the upper plenum 130 (as shown) or the lower plenum 140 (not shown). Thesecond inlet 151 can provide a flow of the same gas as theinlet 150 or a different gas. For example, in a CVD type process, theinlet 150 andsecond inlet 151 may provide different reactive species which can react in theupper plenum 130, flow through theupper openings 135 into the reaction space of theprocess region 102. In some embodiments, thesecond inlet 151 provides a flow of diluent gas into the plenum. In some embodiments, as shown inFIG. 9 , thesecond inlet 151 flows intoupper plenum 130 which is split bydivider 190 into afirst plenum 130 a and asecond plenum 130 b. Theoutlet 160 and lower openings are not illustrated in this Figure for clarity purposes only. - Some embodiments of the disclosure provide
gas distribution modules 100 that can be used in plasma enhanced processes. InFIG. 10A thepartition 120 is connected to an RF feed line 210 (e.g., a coaxial feed line) and thebottom 116 of thehousing 110 is electrically grounded (or held at a different potential than the partition). The sides and top of the housing are made of a suitable dielectric material. In this embodiment, energizing thepartition 120 can result in formation of aplasma 220 in thelower plenum 140. A suitable height forplenum 140 is chosen to generate plasma inlower plenum 140 while a different height is chosen forupper plenum 130 not to generate plasma in upper plenum. The plasma species can flow through thelower openings 145 into theprocess region 102. Embodiments ofFIG. 10A are also referred to as remote plasma sources (RPS) because the plasma is generated remotely from theprocessing region 102. - In another embodiment, as shown in
FIG. 10B , thebottom 116 of thehousing 110 is connected to anRF feed line 210 and thepartition 120, top 111 and ends 114, 115 are non-conductive. In this embodiment, thesubstrate 230 orpedestal 235 can act as the ground electrode (or be held at a different potential than the bottom 116) so that aplasma 220 is generated in theprocessing region 102. In some embodiments, the heights ofupper plenum 130 andlower plenum 140 are suitably chosen not to generate plasma therein. Stated differently, theplasma 220 is generated on an opposite side of the bottom 116 than thelower plenum 140. Embodiments of the type shown inFIG. 10B in which the substrate or pedestal act as an electrode for plasma generation are also referred to as a direct plasma. - In another embodiment, as shown in
FIG. 10C , the top 111 of thehousing 110 is connected to anRF feed line 210 and thepartition 120 and ends 114, 115 are non-conductive. In this embodiment, thepartition 120 can act as the ground electrode (or can be held at a different potential than the top 111) so that aplasma 220 is generated in theupper plenum 130. A suitable height forplenum 130 is chosen to generate plasma inupper plenum 130 while a different height can be chosen forlower plenum 140 to prevent plasma ignition in thelower plenum 140. The plasma species can flow from theupper plenum 130 into theprocess region 102. - The
gas distribution module 100 can be used to form one or more layers during a plasma enhanced atomic layer deposition (PEALD) or plasma enhanced chemical vapor deposition (PECVD) process. In some processes, the use of plasma provides sufficient energy to promote a species into the excited state where surface reactions become favorable and likely. Introducing the plasma into the process can be continuous or pulsed. The plasma may be generated via any suitable plasma generation process or technique known to those skilled in the art. For example, plasma may be generated by one or more of a microwave (MW) frequency generator or a radio frequency (RF) generator. The frequency of the plasma may be tuned depending on the specific reactive species being used. Suitable frequencies include, but are not limited to, 2 MHz, 13.56 MHz, 40 MHz, 60 MHz, 100 MHz, 121 MHz and 162 MHz. Although plasmas may be used during the deposition processes disclosed herein, it should be noted that plasmas may not be required. - In some embodiments, the
gas distribution module 100 is a wedge-shaped component that is combined with other wedge-shaped modules to form a circular or disc-shaped gas distribution assembly.FIG. 11 shows agas distribution assembly 270 comprising at least one gas distribution module 100 (two are shown) and a plurality ofinjector units 240 combined to make a circular assembly. A substrate can be rotated along a circular path beneath each of thegas distribution modules 100 andinjector units 240 to be exposed to a plurality of different processing regions to deposit or remove a film from the substrate. Some embodiments of the disclosure are directed to processing chambers comprising thegas distribution module 100. - Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It will be apparent to those skilled in the art that various modifications and variations can be made to the method and apparatus of the present invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention include modifications and variations that are within the scope of the appended claims and their equivalents.
Claims (20)
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US17/513,871 US20220051910A1 (en) | 2018-04-08 | 2021-10-28 | Showerhead With Interlaced Gas Feed And Removal And Methods Of Use |
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US16/376,367 US11189502B2 (en) | 2018-04-08 | 2019-04-05 | Showerhead with interlaced gas feed and removal and methods of use |
US17/513,871 US20220051910A1 (en) | 2018-04-08 | 2021-10-28 | Showerhead With Interlaced Gas Feed And Removal And Methods Of Use |
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US16/376,367 Continuation US11189502B2 (en) | 2018-04-08 | 2019-04-05 | Showerhead with interlaced gas feed and removal and methods of use |
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JP (1) | JP2021520642A (en) |
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US11834743B2 (en) * | 2018-09-14 | 2023-12-05 | Applied Materials, Inc. | Segmented showerhead for uniform delivery of multiple precursors |
KR20200056273A (en) * | 2018-11-14 | 2020-05-22 | 주성엔지니어링(주) | Apparatus and method for processing substrate |
JP7253972B2 (en) * | 2019-05-10 | 2023-04-07 | 東京エレクトロン株式会社 | Substrate processing equipment |
DE102019119019A1 (en) | 2019-07-12 | 2021-01-14 | Aixtron Se | Gas inlet element for a CVD reactor |
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TW201945583A (en) | 2019-12-01 |
TWI810272B (en) | 2023-08-01 |
US20190311920A1 (en) | 2019-10-10 |
KR20200129170A (en) | 2020-11-17 |
US11189502B2 (en) | 2021-11-30 |
JP2021520642A (en) | 2021-08-19 |
WO2019199620A1 (en) | 2019-10-17 |
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