CN108728820A - Gas mixed nub structure, processing chamber and semiconductor processing equipment - Google Patents
Gas mixed nub structure, processing chamber and semiconductor processing equipment Download PDFInfo
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- CN108728820A CN108728820A CN201710257153.8A CN201710257153A CN108728820A CN 108728820 A CN108728820 A CN 108728820A CN 201710257153 A CN201710257153 A CN 201710257153A CN 108728820 A CN108728820 A CN 108728820A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
Abstract
The present invention provides a kind of gas mixed nub structure, for providing gas to chamber, including multichannel air inlet pipeline and at least outlet pipe all the way, the multichannel air inlet pipeline one-to-one correspondence is connected with multiple air sources, the outlet pipe is connected with the gas access of the chamber, it further include mixing chamber, the mixing chamber has gas mixing space, the mixing chamber is connected with the air inlet pipeline and the outlet pipe respectively, to be exported to the gas access of the chamber using the outlet pipe after so that the gas of the multiple air source is mixed in the gas mixing space.The present invention also provides a kind of processing chamber and semiconductor processing equipments.Gas mixed nub structure, processing chamber and the semiconductor processing equipment can be such that gas mixing obtains relatively uniform, and will not blocking pipeline.
Description
Technical field
The invention belongs to microelectronic processing technique fields, and in particular to a kind of gas mixed nub structure, processing chamber and semiconductor add
Construction equipment.
Background technology
LED PECVD devices are mainly used for carrying out deposition plating to sapphire or silicon chip surface, and SiN/SiO etc. is deposited to
Wafer surface.Detailed process is：Usually by SiH4With N2It after the gases such as O mix in proportion, then is passed through in reaction chamber, Zhi Houjia
It carries radio-frequency voltage progress build-up of luminance to excite to form plasma, SiN/SiO films is finally deposited on chip.It is emphasized that
Gas mixing is one of the committed steps of LED PECVD before the reaction, and whether gas mixing fully can also determine in single batch time
Whole stove film thickness, index of refraction homogeneity whether reach requirement.
Fig. 1 is a kind of structural schematic diagram of gas mixed nub structure of the prior art, referring to Fig. 1, SiH4With N2The two-way gas of O
Pass sequentially through respectively front end pneumatic operated valve (V11, V21) in gas box Gasbox, mass flow controller (MFC1, MFC2), after
Pneumatic operated valve (V12, V22) is held to be transmitted along respective air inlet pipeline, and when reaching the top of gas access of chamber, common
The gas access that chamber is directly entered after being mixed in gas mixing pipe road all the way reaches chamber interior.
Fig. 2 is the structural schematic diagram of another gas mixed nub structure of the prior art, referring to Fig. 2, SiH4With N2The tow channel gas of O
Body pass sequentially through respectively front end pneumatic operated valve (V11, V21) in gas box Gasbox, mass flow controller (MFC01,
MFC02 directly two-in-one inside gas box Gasbox), after rear end pneumatic operated valve (V12, V22), in common gas mixing pipe all the way
The gas access that chamber is directly entered after being mixed in road reaches chamber interior.
Problems with is found using the gas mixed nub structure described in Fig. 1 and Fig. 2 in practical applications：
First, using gas mixed nub structure shown in FIG. 1, since gas mixing pipe road is shorter, gas mixes in very short pipeline
It closes uneven.
Second, using gas mixed nub structure shown in Fig. 2, for opposite Fig. 1, although gas mixing pipe road increases, to a certain extent
The non-uniform problem of gas mixing is improved, still, and exists to mix in longer pipeline and is easy to generate deposit, block pipe
Road.
For this purpose, at present there is an urgent need for it is a kind of not only be uniformly mixed but also will not blocking pipeline gas mixing device.
Invention content
The present invention is directed at least solve one of the technical problems existing in the prior art, it is proposed that a kind of gas mixed nub structure, work
Skill chamber and semiconductor processing equipment can not only make gas mixing uniform, and will not blocking pipeline.
One of in order to solve the above problem, the present invention provides a kind of gas mixed nub structure, it is used to provide gas to chamber, including more
Road air inlet pipeline and at least outlet pipe, the multichannel air inlet pipeline are connected with multiple air sources correspondingly all the way, it is described go out
Air pipe is connected with the gas access of the chamber, further includes mixing chamber, and the mixing chamber has gas mixing space,
The mixing chamber is connected with the air inlet pipeline and the outlet pipe respectively, to make the gas of the multiple air source
Body is exported using the outlet pipe to the gas access of the chamber after being mixed in the gas mixing space.
Preferably, the mixing chamber includes inlet plate,
The inlet plate includes corresponding the multiple annular intake pipe roads being connected with the multichannel air inlet pipeline；
The annular intake pipe road is arranged at intervals with multiple ventholes, is used for the gas in the annular intake pipe road
Import the gas mixing space.
Preferably, circumferential uniform intervals of the multiple venthole along the annular intake pipe road are arranged.
Preferably, the multiple annular intake pipe road of corresponding the multiple air inlet pipeline is nested successively in the same plane
Setting.
Preferably, the multiple annular intake pipe road stacking interval setting of corresponding the multiple air inlet pipeline, and export
Gas flow direction it is identical.
Preferably, the mixing chamber further includes mixed gas plate,
The mixed gas plate is arranged in the mixing chamber, and along the gas flow for stopping the annular intake pipe road output
Direction is arranged；
The mixed gas plate includes multiple blades and centerbody；
The multiple blade is along the circumferentially-spaced of the centerbody and is fixedly installed, and the inclined direction of the multiple blade
It is identical.
Preferably, the quantity of the mixed gas plate is multiple；
The direction interval for the gas flow that the multiple mixed gas plate is exported along the annular intake pipe road is arranged；And adjacent two
The inclined direction of the multiple blade of a mixed gas plate is opposite.
Preferably, the mixed gas plate further includes ring edge body；
The outer end of multiple blades of the mixed gas plate is fixed on the inner wall of the ring edge body.
Preferably, the inlet plate is mounted on the bottom of the mixing chamber, and the mixed gas plate is mounted on the mixing chamber top
Portion；
One end that the outlet pipe is connected with the mixing chamber is located at the top of the mixing chamber, and sequentially passes through described
The bottom wall of mixed plate, the inlet plate and the mixing chamber is connected with the gas access of the chamber.
The present invention also provides a kind of processing chambers, including gas mixed nub structure, for being carried out before gas with various enters chamber
Mixing, the gas mixed nub structure use above-mentioned gas mixed nub structure.
The present invention also provides a kind of semiconductor processing equipment, including processing chamber, the processing chamber uses above-mentioned technique
Chamber.
The invention has the advantages that：
The present invention can not only be increased by multichannel by the way that the mixing chamber being connected with multichannel air inlet pipeline and outlet pipe is arranged
Air inlet pipeline input multipath gas mixing space, so as to so that gas mixing obtain it is relatively uniform；And by the mixing chamber
It is positioned close at the position of the gas access of chamber, can largely reduce the gas mixing pipe for the gas access for reaching chamber
The length on road, thus will not blocking pipeline.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of gas mixed nub structure of the prior art；
Fig. 2 is the structural schematic diagram of another gas mixed nub structure of the prior art；
Fig. 3 is the structural schematic diagram for the gas mixed nub structure that the embodiment of the present invention 1 provides；
Fig. 4 is a kind of structural schematic diagram of the mixing chamber in Fig. 3；
Fig. 5 is the structural schematic diagram of inlet plate in Fig. 4；
Fig. 6 is another structural schematic diagram of the mixing chamber in Fig. 3；
Fig. 7 is the structural schematic diagram that gas plate is mixed in Fig. 6；
Fig. 8 is another structural schematic diagram of the mixing chamber in Fig. 3；
Fig. 9 is still another structural schematic diagram of the mixing chamber in Fig. 3.
Wherein, reference numeral includes：1, air inlet pipeline；2, outlet pipe；3, mixing chamber；4, inlet plate；5, venthole；6,
Annular intake pipe road；7, mix gas plate；8, blade；9, centerbody；10, ring edge body.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, come below in conjunction with the accompanying drawings to the present invention
Gas mixed nub structure, processing chamber and the semiconductor processing equipment of offer are described in detail.
Embodiment 1
Fig. 3 is the structural schematic diagram of gas mixed nub structure provided in an embodiment of the present invention；Referring to Fig. 3, the embodiment of the present invention carries
The gas mixed nub structure of confession, for providing gas to chamber, including multichannel air inlet pipeline 1 and at least outlet pipe 2 all the way, multichannel air inlet
The one-to-one correspondence of pipeline 1 is connected with multiple air sources, and outlet pipe 2 is connected with the gas access of chamber.Gas mixed nub structure further includes mixing
Chamber 3, mixing chamber 3 have gas mixing space, and mixing chamber 3 is connected with air inlet pipeline 1 and outlet pipe 2 respectively, multiple to make
The gas of air source is exported using outlet pipe 2 to the gas access of chamber after being mixed in the gas mixing space.
Wherein, the quantity for the air inlet pipeline 1 for including about gas mixed nub structure, can be set as needed, for example, setting mixes gas
Structure includes two-way air inlet pipeline 1.For convenience of description, the embodiment of the present invention and attached drawing include two-way air inlet pipe with gas mixed nub structure
It is illustrated for road 1.
In conjunction with Fig. 3, in of the invention, two-way gas is entered from factory service end inside Gasbox, passes sequentially through front end pneumatic operated valve
(V11, V21), mass flow controller (MFC01, MFC02) and rear end pneumatic operated valve (V12, V22), are arrived along respective air inlet pipeline 1
The mixing chamber 3 being arranged up to the gas access top of chamber.Mixing chamber 3 is the larger container of a volume, and two-way gas is passed through mixed
It closes in chamber 3, after mixing chamber 3 is completed to mix gas, mixing chamber 3 is entered gas of the mixed gas through chamber by outlet pipe 2
Mouth reaches chamber interior.
The present invention can not only be increased by multichannel by the way that the mixing chamber 3 being connected with air inlet pipeline 1 and outlet pipe 2 is arranged
Air inlet pipeline input gas with various mixing space, so as to so that gas mixing obtain it is relatively uniform；And by the mixing chamber
It is positioned close at the position of the gas access of chamber, can largely reduce the gas mixing pipe for the gas access for reaching chamber
The length on road, thus will not blocking pipeline.
Preferably, as shown in figure 4, mixing chamber 3 includes inlet plate 4；As shown in figure 5, inlet plate 4 includes and multichannel air inlet pipe
Road 1 corresponds connected multiple annular intake pipe roads 6, and multiple ventholes 5 are arranged at intervals on annular intake pipe road 6, to
Gas in annular intake pipe road 6 is imported in the gas mixing space of mixing chamber 3.It is appreciated that can by multiple ventholes 5
Multiple regions outlet in mixing chamber 3, it is uniform to be conducive to gas mixing.
Preferably, as shown in figure 5, circumferential uniform intervals of the multiple ventholes 5 along annular intake pipe road 6 are arranged, to more
Be conducive to gas to be uniformly mixed in mixing chamber 3.
Preferably, as shown in figure 5, multiple annular intake pipe roads 6 (two) of corresponding multiple air inlet pipelines 1 are in same plane
On nested setting successively, in this way, multiple gases Rapid contact can not only be made to mix, but also reduce the volume and section of inlet plate
Save the space of mixing chamber.
It is further preferred that as shown in figure 9, multiple annular intake pipe roads 6 stacking interval setting of corresponding multiple air inlet pipelines 1,
And the direction of the gas flow of output is identical (in such as Fig. 9 from the bottom to top).It should be noted that in practical applications,
The shape on multiple annular intake pipe roads 6 can it is identical also can be different, the shape both in Fig. 9 is identical, and is leaf shape, certainly,
Other shapes can also be used in practical applications, for example, ellipse, quadrangle, pentagon etc..
Preferably, it as shown in fig. 6, mixing chamber 3 includes mixed gas plate 7, mixes gas plate 7 and is arranged in mixing chamber 3, and along blocker ring
The direction for the gas flow that shape air inlet pipeline 6 exports is arranged, and in Fig. 6, gas flow is that from the bottom to top, therefore, mixed gas plate 7 is set
It is the horizontal direction in Fig. 6 to set direction；As shown in fig. 7, mixed gas plate 7 includes multiple blades 8 and centerbody 9；Multiple blades are in
The circumferentially-spaced and fixed setting of heart body 9, and the inclined direction of multiple blades 8 is identical.It is appreciated that by along blocking air-flow side
To setting and mixed gas plate 7 with multiple blades 8, the air-flow that can to flow through gap between the blade 8 form vortex, have
Conducive to being uniformly mixed for gas.
Preferably, the quantity for mixing gas plate 7 is multiple；The gas flow that multiple mixed gas plates 7 are exported along annular intake pipe road
The setting of direction (vertical direction in Fig. 6) interval, the inclined direction of multiple blades 8 of two neighboring mixed gas plate 7 is on the contrary, in this way, more
It is uniform to be conducive to gas mixing, to obtain more uniform mixed gas.
Preferably, as shown in fig. 7, mixed gas plate 7 further includes ring edge body 10；The outer end of multiple blades 8 of mixed gas plate 7 is solid
It is scheduled on the inner wall of ring edge body 10, to be not only convenient for fixing the installation of mixed gas plate 7, and the stability of mixed gas plate 7
With reliability height.
Preferably, as shown in figure 8, mixing chamber 3 can also include that inlet plate 4 and mixed gas plate 7, inlet plate 4 are mounted on simultaneously
The bottom of mixing chamber 3 is mixed gas plate 7 and is mounted at the top of the mixing chamber；One end that outlet pipe 2 is connected with mixing chamber 3 is located at mixed
The top of chamber is closed, and sequentially passes through the bottom wall of mixed plate 7, inlet plate 4 and mixing chamber 3, in this way, the row of the gas of air inlet pipeline 1
Journey is from the bottom to top, then from top to bottom to be exported by outlet pipe 2, thus can increase the stroke of gas, to favourable gas
More fully mix.It is appreciated that Fig. 8 is by including simultaneously inlet plate 4 and mixed gas plate 7, the case where with respect to Fig. 6 and Fig. 4 and
Speech can make the more uniform of gas mixing.
Preferably, mixing chamber 3 is split structure, consequently facilitating dismounting and being convenient to clean the pair generated in reaction process
Product.
Preferably, inlet plate 4 and chamber bottom are structure as a whole and detachably, in this way can be by dismantling the integral structure
Inlet plate 4 and chamber bottom cleaned, in this way so that mixing chamber it is relatively simple for structure, be easily installed and safeguard.
Embodiment 2
An embodiment of the present invention provides a kind of processing chamber, including gas mixed nub structure, for gas with various enter chamber it
Before mixed, gas mixed nub structure use embodiment 1 in gas mixed nub structure.
Processing chamber provided in an embodiment of the present invention, due to using the gas mixed nub structure in embodiment 1, thus the processing chamber
Gas mixing can not only obtained relatively uniform, and will not blocking pipeline, so as to improve the processing quality of processing chamber
With the stability and reliability of chamber.
Embodiment 3
An embodiment of the present invention provides a kind of semiconductor processing equipment, including processing chamber, processing chamber uses above-mentioned reality
Apply the processing chamber in example 2.
Semiconductor processing equipment provided in an embodiment of the present invention, due to the technique provided using the above embodiment of the present invention 2
Chamber, it is thus possible to improve the processing quality of semiconductor processing equipment, stability and reliability.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of gas mixed nub structure, for providing gas to chamber, including multichannel air inlet pipeline and at least outlet pipe all the way, it is described
Multichannel air inlet pipeline is connected with multiple air sources correspondingly, and the outlet pipe is connected with the gas access of the chamber,
It being characterized in that, further includes mixing chamber, the mixing chamber has gas mixing space,
The mixing chamber is connected with the air inlet pipeline and the outlet pipe respectively, to make the gas of the multiple air source exist
It is exported to the gas access of the chamber using the outlet pipe after being mixed in the gas mixing space.
2. gas mixed nub structure according to claim 1, which is characterized in that the mixing chamber includes inlet plate,
The inlet plate includes corresponding the multiple annular intake pipe roads being connected with the multichannel air inlet pipeline；
The annular intake pipe road is arranged at intervals with multiple ventholes, for importing the gas in the annular intake pipe road
The gas mixing space.
3. gas mixed nub structure according to claim 2, which is characterized in that the multiple venthole is along the annular intake pipe road
Circumferential uniform intervals setting.
4. gas mixed nub structure according to claim 2, which is characterized in that the multiple ring of corresponding the multiple air inlet pipeline
The nested setting successively in the same plane of shape air inlet pipeline.
5. gas mixed nub structure according to claim 2, which is characterized in that the multiple ring of corresponding the multiple air inlet pipeline
Shape air inlet pipeline stacking interval setting, and the direction of the gas flow exported is identical.
6. gas mixed nub structure according to claim 2, which is characterized in that the mixing chamber further includes mixed gas plate,
The mixed gas plate is arranged in the mixing chamber, and along the direction for the gas flow for stopping the annular intake pipe road output
Setting；
The mixed gas plate includes multiple blades and centerbody；
The multiple blade is along the circumferentially-spaced of the centerbody and is fixedly installed, and the inclined direction phase of the multiple blade
Together.
7. gas mixed nub structure according to claim 6, which is characterized in that the quantity of the mixed gas plate is multiple；
The direction interval for the gas flow that the multiple mixed gas plate is exported along the annular intake pipe road is arranged；And two neighboring institute
The inclined direction for stating the multiple blade of mixed gas plate is opposite.
8. gas mixed nub structure according to claim 6, which is characterized in that the mixed gas plate further includes ring edge body；
The outer end of multiple blades of the mixed gas plate is fixed on the inner wall of the ring edge body.
9. gas mixed nub structure according to claim 6, which is characterized in that the inlet plate is mounted on the bottom of the mixing chamber
Portion, the mixed gas plate are mounted at the top of the mixing chamber；
One end that the outlet pipe is connected with the mixing chamber is located at the top of the mixing chamber, and sequentially passes through the mixing
The bottom wall of plate, the inlet plate and the mixing chamber is connected with the gas access of the chamber.
10. a kind of processing chamber, including gas mixed nub structure, for being mixed before gas with various enters chamber, feature exists
In the gas mixed nub structure uses gas mixed nub structure described in any one of claim 1-9.
11. a kind of semiconductor processing equipment, including processing chamber, which is characterized in that the processing chamber uses claim 10
The processing chamber.
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| CN201710257153.8A CN108728820B (en) | 2017-04-19 | 2017-04-19 | Gas mixing structure, process chamber and semiconductor processing equipment |
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|---|---|---|---|
| CN201710257153.8A CN108728820B (en) | 2017-04-19 | 2017-04-19 | Gas mixing structure, process chamber and semiconductor processing equipment |
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| CN108728820A true CN108728820A (en) | 2018-11-02 |
| CN108728820B CN108728820B (en) | 2020-06-19 |
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Cited By (11)
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| CN110158057A (en) * | 2019-06-05 | 2019-08-23 | 承德石油高等专科学校 | A kind of pecvd process chamber bye-pass device and its air-channel system at place |
| CN110699652A (en) * | 2019-10-18 | 2020-01-17 | 北京北方华创微电子装备有限公司 | Preparation method of wafer back gold layer and transistor device |
| CN110923669A (en) * | 2019-11-26 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Gas spraying device and chemical vapor deposition method |
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